KR101086698B1 - SPP Bragg Grating Components in the MIM Structure and Manufacturing Method Thereof - Google Patents

Abstract

The present invention relates to an SPP Bragg grating device in a MIM structure and a method of manufacturing the same, comprising a first metal layer, a dielectric layer formed on the first metal layer, and a second metal layer formed on the dielectric layer, the upper or lower portion of the second metal layer. Providing a Bragg grating device and a method of manufacturing the same, characterized in that the metal Bragg grating structure is protruding, it is possible to implement a highly integrated nano plasmonic circuit such as miniaturization, low power consumption, low cost optical integrated module.

Nano plasmonic, waveguide, SPP, Bragg grating, Bragg Grating

Description

SPP Bragg Grating Components in the MIM Structure and Manufacturing Method Thereof}

The present invention relates to an SPP Bragg grating element in a MIM structure and a method of manufacturing the same, wherein the metal Bragg grating is formed on or under the upper metal layer among the structure consisting of the upper metal layer and the lower metal layer of the dielectric layer, or another inside the dielectric layer. The present invention relates to an SPP Bragg grating device in which Bragg grating composed of a dielectric is formed, and a fabrication method thereof.

Recently, it has been confirmed that light waves interact with free electrons on the metal surface and cause resonance when certain conditions are met at the boundary between metal and dielectric. This resonance corresponds to the resonance between electromagnetic waves outside the metal and free electrons in the metal. The result is Surface Plasmon, a traveling wave of dense electrons that resembles the shape of a wave flowing along a surface.

Surface Plasmon (SP) or Surface Plasmon Polariton (SPP) refers to light or photons traveling along the surface in the form of light or photons combined at the interface between metal and dielectric.

When the light waves incident on the interface between the metal and the dielectric with TM polarization can satisfy the phase matching condition by an appropriate method, the movement of electrons, or plasma, is generated on the metal surface, and the combination causes the metal and the dielectric. Produces a near field on the interface. These surface plasmon waves can be made from several nanometers to several tens of micrometers or more, and have strong local near field properties, and have distinctive dispersion and resonance phenomena (Surface Plasmon Resonance). In addition to making and guiding waveguides for these surface plasmon waves, the field of studying plasmon sources, receivers, distributors, couplers, reflectors, and filters is called surface plasmonics. do.

Research into a new category of devices using such surface plasmon polaritone (SPP) is underway in many groups and is frequently published in leading journals. Based on this research, surface plasmonics technology that can deliver electromagnetic waves to a very small structure is expected to revolutionize high-speed computer chips or ultra-sensing sensing technologies.

On the other hand, currently commonly used photovoltaic integrated module or optical integrated module is composed of a size of several to several tens of cm 2 area. For example, an optical add / drop multiplexer (OADM) module is formed in this area (several cm x several cm), and in the case of photonic crystal integrated circuits, at least a few It is formed in the size of mm2 area (several mm x several mm).

However, the OADM module and the photonic crystal integrated circuit also do not correspond to the sub-millimeter device that is being actively studied recently, and thus are not applicable to nanotechnology. Therefore, it is time to implement a microcircuit with an area of sub-millimeter or less.

The present invention relates to an SPP Bragg grating device in a MIM structure and a method for fabricating the same, and in particular, an SPP Bragg grating device for fabricating a highly integrated photon circuit such as a microminiaturization, low power consumption, and a low cost optical integrated module, and a fabrication thereof. The purpose is to provide a method.

Surface plasmon polariton Bragg grating device according to an aspect of the present invention comprises a first metal layer; A dielectric layer formed on the first metal layer; And a second metal layer formed on the dielectric layer, wherein the metal Bragg grating structure protrudes from at least one of the upper and lower portions of the second metal layer.

The first metal layer or the second metal layer may be made of any one of a noble metal or a transition metal.

The dielectric layer may be formed of any one material of silicon (Si), quartz (SiO 2), or polymer (Polymer).

The first metal layer, the second metal layer, and the dielectric layer may have a thickness of several nanometers to several micrometers.

According to another aspect of the present invention, a surface plasmon polariton brag grating device includes: a first metal layer; A dielectric layer formed on the first metal layer; And a second metal layer formed on the dielectric layer, wherein a Bragg grating structure is formed in the dielectric layer or on the second metal layer, and formed of a dielectric having a refractive index different from that of the dielectric constituting the dielectric layer. .

One side of the Bragg grating structure formed inside the dielectric layer may be formed to contact the first metal layer and the second metal layer.

The first metal layer, the second metal layer, and the dielectric layer may have a thickness of several nanometers to several micrometers.

The nano plasmonic integrated circuit module according to another aspect of the present invention focuses an optical signal received from an optical waveguide, converts it into a surface plasmonic polariton signal, and focuses it to a size of several to several tens of microns. Taper); A dual waveguide device for transmitting the focused surface plasmon pleton signal; And an output double metal taper for defocusing the surface plasmonic polariton signal transmitted to the double waveguide device and converting the result into an optical signal, wherein the double waveguide device comprises: a first metal layer; A dielectric layer formed on the first metal layer; And a second metal layer formed on the dielectric layer, wherein the Bragg grating structure is formed to protrude from at least one of the upper and lower portions of the second metal layer.

The first metal layer or the second metal layer may be made of any one of a noble metal or a transition metal.

The dielectric layer may be formed of any one material of silicon (Si), quartz (SiO 2), or polymer.

The first metal layer, the second metal layer, and the dielectric layer may have a thickness of several nanometers to several micrometers.

The nano plasmonic integrated circuit module according to another aspect of the present invention focuses an optical signal received from an optical waveguide, converts it into a surface plasmonic polariton signal, and focuses it to a size of several to several tens of microns. Taper); A dual waveguide device for transmitting the focused surface plasmon pleton signal; And an output double metal taper for defocusing the surface plasmonic polariton signal transmitted to the double waveguide device and converting the result into an optical signal, wherein the double waveguide device comprises: a first metal layer; A dielectric layer formed on the first metal layer; And a second metal layer formed on the dielectric layer, wherein a Bragg grating structure is formed in the dielectric layer or on the second metal layer, and formed of a dielectric having a refractive index different from that of the dielectric constituting the dielectric layer. .

The first metal layer or the second metal layer may be made of any one of a noble metal or a transition metal.

The dielectric layer may be formed of any one material of silicon (Si), quartz (SiO 2), or polymer.

The first metal layer, the second metal layer, and the dielectric layer may have a thickness of several nanometers to several micrometers.

According to another aspect of the present invention, there is provided a method of manufacturing a surface plasmon polariton brag grating device, comprising: depositing or spinning a lower clad on a wafer; Dropping metal ink on the lower clad; Forming a metal grating by covering the Master Stamp on the Lower clad and then baking at a predetermined pressure, temperature and time; After baking is finished, the master stamp is released, and the upper clad is deposited or spin coated.

In this case, the metal ink may be characterized as Ag ink.

In addition, the method for manufacturing a surface plasmon polariton Bragg grating device according to another aspect of the present invention comprises the steps of creating a lower clad on the wafer; Depositing or spin coating the core onto the lower clad; Dropping a dielectric having the same refractive index as the core on the core; Covering a polydimethylsiloxane (PDMS) stamp and exposing for a predetermined time at a predetermined pressure and power to produce a grating layer (Grating Layer); Releasing the PDMS stamp and spin coating a metal ink onto the resulting grating layer; And depositing or spin coating an upper clad on the metal grating produced by spin coating the metal ink.

The metal ink may be an Ag ink, and the dielectric having the same refractive index as the core may be a polymer.

According to another aspect of the present invention, a surface plasmon polariton brag grating device includes: a first metal layer; A dielectric layer formed on the first metal layer; And a second metal layer formed on the dielectric layer, wherein the waveguide line width of the second metal layer is in a pulse shape for a predetermined period.

The present invention provides an SPP Bragg grating device in a MIM structure and a method of fabricating the same, and accordingly, the present invention provides a nano plasmonic device capable of simultaneously solving the diffraction limit of light and the RC delay problem of an electron. It becomes available. As a result, it is possible to implement highly integrated photon circuits such as miniaturization, low power consumption, and low cost optical integrated modules.

Hereinafter, the SPP Bragg grating element and its manufacturing method in the MIM structure according to the present invention will be described in detail.

The concept of Nano Plasmonic Integrated Circuits will be described first. The nano plasmonic integrated circuit converts or generates an incident optical signal into a surface plasmon polariton (SPP) inside a chip having a sub-millimeter size and transmits it through a waveguide. On the other hand, it refers to a circuit in which a series of devices are integrated to recognize, detect, and process the transmitted surface plasmon polaritone, and then convert the output into an optical signal. Hereinafter, the configuration of the nano plasmonic integrated circuit will be described in detail with reference to the accompanying drawings.

1 is a view showing the configuration of a nano plasmonic double metal waveguide device according to an embodiment of the present invention.

As shown in FIG. 1A, the nano plasmonic double metal waveguide device 10 includes an input double metal taper 11, a double metal waveguide 12, and an output double metal taper 13. Can be configured.

The input double metal taper 11 shown in FIG. 1 injects light, which is output from the light source 31 of FIG. The input double metal taper 11 converts light signals ranging from a few microns to sub-microns depending on the thickness of the dielectric layer into a surface plasma polariton (SPP) light signal ranging from several microns to several tens of microns or nano-sized. Play a role.

Conversely, the output double metal taper 13 converts a number of microns or nano sized surface plasmon polaritone light signals from the number passing through the double metal waveguide 12 into light signals of several to submicron size depending on the thickness of the dielectric layer. The mode is converted into an optical waveguide.

The double metal waveguide 12 serves as a waveguide through which the optical signal in the SPP mode proceeds. Similarly to the double metal tapers 11 and 13, the double metal waveguide 12 preferably has a metal insulator metal (MIM) structure including a lower metal layer, a dielectric layer, and an upper metal layer.

Hereinafter, the structure of the input and output double metal taper (11, 13) in more detail.

As shown in (a) of FIG. 1, the input double metal taper 11 has a top metal layer 11 that is gradually narrowed while progressing from one end to the other end, such as a wedge or taper shape in plan view.

Optical waveguides (not shown) connected to the input and output double metal tapers 11 and 13 generally have a physical size in the order of several micrometers (μm). On the other hand, the double metal waveguide 12 has a width of several thousand to tens of nanometers (nm) and a thickness of several hundred to several tens of nanometers (nm). Depending on the thickness of the dielectric layer of the double metal waveguide 12, the SPP mode size will have tens of nanometers in the micron band.

The wide face of the input double metal taper 11, i.e. the input face of the signal, is connected to an optical fiber of several to submicrons in size and has a corresponding size. Likewise, the narrow surface of the input double metal taper 11, that is, the signal output surface, is connected to the double metal waveguide 12 having a size of several tens of nanometers, and thus has a size of several hundred to several tens of nanometers.

The optical signal input on the wide side of this submicron size is converted into an SPP optical signal of several to submicron size. Afterwards, the input double metal taper 11 is gradually narrowed, focusing to an SPP optical signal of hundreds to tens of nanometers depending on the thickness of the dielectric layer, and the focused SPP optical signal is transferred to the double metal waveguide 12. It is input.

On the other hand, the output double metal taper 13 has a planar configuration of a shape that gradually widens while progressing from one end to the other end, such as a wedge or taper shape on a plane. As a result, the input double metal taper 11 and the output double metal taper 13 may have a symmetrical structure.

In contrast to the input double metal taper 11, the SPP optical signal of several hundred to several tens of nanometers input into the narrow side of the output double metal taper 13 has a size of several to sub microns while traveling through the output double metal taper 13. Defocused with an optical signal. SPP optical signals of de-focused number to sub-micron size are converted into optical signals on the wide side of the output double metal taper 13 and input to the optical fiber.

On the other hand, the vertical structure of the input and output double metal taper (11, 13), as shown in Figure 1 (b) from the lowest layer to the metal layer (Metal) 14-dielectric layer (Insulator) 15-metal layer It can be seen that it is formed in the order of (Metal) (16). As such, the structure of the metal layer, the dielectric layer, and the metal layer is referred to as a metal-insulator-metal (MIM) structure.

At this time, the materials usable in the metal layers 14 and 16 include precious metals such as gold (Au), silver (Ag), platinum (Pt), or transition metals such as copper (Cu) and aluminum (Al). As the dielectric layer 15, a dielectric material that can easily change refractive index such as silicon (Si), quartz (SiO 2), or polymer (Polymer) is available.

The lower metal layer 14 and the dielectric layer 15 may have the same shape in plan view with the upper metal layer 16 having a wedge shape. In addition, the dielectric layer 15 and the lower metal layer 14 may be replaced with a layer having an arbitrary shape other than the metal shape of the upper metal layer 16 having a wedge or taper shape while overlapping the metal shape of the upper metal layer 16 in plan view. can do.

For example, as shown in FIG. 1A, the lower metal layer 14 may have a planar rectangular shape, particularly a strip shape, rather than a shape of the upper metal layer 16 having a planar taper shape. It is.

In addition, the vertical structures of the double metal tapers 11 and 13 may be reversed. For example, a double metal taper in which the lower metal layer 14 has a wedge or tapered waveguide shape in plan view and the upper metal layer 16 has a strip shape may be considered.

The optical signal transmitted in the optical waveguide of several to submicron size is converted to the optical signal of several to submicron units according to the thickness of the dielectric layer on the wide side of the double metal taper 11 and 13. Is converted to. In addition, the SPP signal is focused on the SPP signal in a few tens of microns or nano units while proceeding through the double metal taper 11.

Through this process, SPP optical signals of thousands to hundreds of nanometers (nm) unit at the double metal taper (11) input are focused in the SPP mode of hundreds to tens of nanometers (nm) at the output stage, and the focusing coupling loss between SPP modes is minimized. The effect can be obtained.

2 is a view showing a planar configuration of a nano plasmonic integrated circuit module according to another embodiment of the present invention.

In the nano plasmonic integrated circuit 20 of FIG. 2, an input double metal taper 21, a double metal waveguide 22, an output double metal taper 23, a signal sensing and processing unit 24, and the like are provided as wafers 25. It can be configured to be integrated).

In addition, the nano plasmonic integrated circuit 20 of FIG. 2 includes a signal sensing and processing unit 24 in addition to the structure of the double metal waveguide device 10 of FIG. 1.

The signal detection and processing unit 24 corresponds to a component that detects the SPP optical signal or performs predetermined signal processing. The signal sensing and processing unit 24 may be implemented by taking a structure in which a cladding layer is exposed to a part or an arm of a double metal waveguide.

3 is a view showing the configuration of an optical bench using the nano-plasmonic integrated circuit of FIG.

As shown in FIG. 3, the optical bench 30 includes the nano plasmonic integrated circuit 20 of FIG. 2. In addition, the optical bench 30 of FIG. 3 further includes a light source and a photo detector (PD) 32 and 33 which may be configured as a laser diode (LD) 31.

The light source 31, which may be constituted by the laser diode 31 of FIG. 3, may output a laser for signal processing. Such a laser corresponds to an input optical signal. The input optical signal is input to the input double metal taper 21 of the nano plasmonic integrated circuit 20.

The input double metal taper 21 of the nano plasmonic integrated circuit 20 converts the input optical signal into the optical signal of the SPP mode, focuses it, and transmits the optical signal to the double metal waveguide 22.

Thereafter, the optical signal of the SPP mode is transmitted through the double metal waveguide 22. The signal detection and processing unit 24 detects several tens of nanometer-sized SPP optical signals transmitted through the double metal waveguide 22 and performs a series of signal processing.

The output double metal taper 23 of the nano plasmonic integrated circuit 20 defocuss the SPP optical signal having a size of several tens of nanometers, converts it into an optical signal, and transmits the optical signal to the optical fiber. The optical signal transmitted to the optical fiber as described above is transmitted to the photodiodes 32 and 33.

Looking at the configuration of the optical bench 30 of Figure 3, it can be seen that there are two photodiodes (32, 33). This is because the nanoplasmonic integrated circuit 20 of FIG. 2 has a structure in which two optical signals are output by branching an input signal. Of course, it will be apparent to those skilled in the art that the number of double metal tapers 21 and 23 included in the nano plasmonic integrated circuit 20 can be freely adjusted.

4 is a view showing an optical signal transmitted through the optical bench shown in FIG.

As shown in the top view of FIG. 4A, an optical waveguide, a laser diode, a photodiode, or the like is transmitted with a submicron-sized optical signal, and the submicron-sized optical signal is transferred to the input double metal taper 21. Once it is input into a wide area.

The optical signal is converted into a SPP optical signal of several to submicrons in a large area of the input double metal taper 21, and the SPP optical signal gradually goes from several hundred to several tens of nanometers while traveling along the input double metal taper 21. Focused into SPP optical signal with (nm) mode size. That is, the SPP optical signal is focused while traveling along the input double metal taper 21.

The SPP optical signal having a size of several tens of nanometers focused is input from the input double metal taper 21 to the double metal waveguide 22, and the SPP optical signal travels through the double metal waveguide 22.

Looking at the side view shown in (b) of Figure 4, it can be seen that the input double metal taper 21 and the double metal waveguide 22 has a MIM structure consisting of a metal layer-dielectric layer-metal layer. As the signal input from the fiber is focused according to the structure of the double metal taper, the mode size becomes smaller.

The signal then transferred from the input double metal taper 21 to the double metal waveguide 22 corresponds to an optical signal focused at about 20 to 30 nm.

5 is a view showing the structure of a double metal SPP metal Bragg grating device according to another embodiment of the present invention.

As shown in FIG. 5, the SPP metal Bragg grating elements 50A, 50B, 50C include the upper metal layers 51A, 51B, 51C, the lower metal layers 52A, 52B, 52C, dielectric layers 53A, 53B, 53C, and grating. And may include structures 54A, 54B, and 54C.

Among the metals of the upper metal layers 51A, 51B and 51C and the lower metal layers 52A, 52B and 52C, precious metals such as gold (Au), silver (Ag) and platinum (Pt), or copper (Cu) and aluminum (Al) It is preferable that it is comprised from transition metals, such as). In addition, the dielectric layers 53A, 53B, and 53C are preferably made of a dielectric material that can easily change refractive index such as quartz (SiO 2), silicon (Si), and polymer (Polymer).

In this case, the thickness d1 of the upper metal layers 51A, 51B, and 51C and the lower metal layers 52A, 52B, and 52C may have a thickness of several nanometers to several micrometers. In addition, the dielectric layers 53A, 53B, 53C located between the upper metal layers 51A, 51B, 51C and the lower metal layers 52A, 52B, 52C may have a thickness d2 of several nanometers to several micrometers. have. Here, several nanometers to several micrometers means the range between 1 nm and 10 micrometers.

FIG. 5A shows the Bragg grating 54A protruding from the upper metal layer 51A. FIG. 5B shows the Bragg grating 54B protruding from the lower portion of the upper metal layer 51B. In addition, FIG. 5C shows the Bragg grating 54C protruding from and formed on both the upper and lower portions of the upper metal layer 51C.

Meanwhile, referring to FIGS. 5D and 5E, it can be seen that Bragg grating is formed by changing the line widths of the waveguides of the upper metal layers 51D and 51E. Of course, the bragg grating may be formed by changing the line widths of the waveguides of the lower metal layers 52D and 52E.

In particular, it can be seen from FIGS. 5D and 5E that the line width is changed so that the line width has a periodic change in pulse form.

The Bragg gratings 54A, 54B, 54C, 54D, and 54E of FIG. 5 described above are formed by modifying the shape of the upper metal layer or the lower metal layer.

6 is a view showing the structure of a double metal SPP metal Bragg grating device according to another embodiment of the present invention.

The double metal SPP metal Bragg grating elements 60A, 60B, 60C of FIG. 6 also basically grate with the upper metal layers 61A, 61B, 61C, the lower metal layers 62A, 62B, 62C, the dielectric layers 63A, 63B, 63C. It may be configured to include structures 64A, 64B, 64C. However, the difference from FIG. 6 is that the Bragg grating 64 has a different configuration.

Referring to FIG. 6A, a Bragg grating structure 64A exists in the dielectric between the double metal layers 61A and 62A. At this time, the Bragg grating structure 64A is formed of a separate dielectric having a different refractive index from the dielectric layer 63A existing between the double metal layers 61A and 62A.

Similarly, in FIG. 6B, the bragg grating structure 64B exists in the dielectric layer 63B between the double metal layers 61B and 62B. However, there is a difference in that one side of the Bragg grating structure 64B in the dielectric layer 63B is in contact with the double metal layers 61B and 62B. At this time, the surface on which the signal is input, reflected or output in the Bragg grating structure 64B is vertically connected to the double metal layers 61B and 62B.

In FIG. 6C, Bragg grating 64C including a dielectric exists outside the double metal layers 61C and 62C. Although the brag grating 54C in FIG. 5C is made of a metal, the difference is that the brag grating 64C in FIG. 6C is made of a dielectric.

7 is a view showing the configuration of an optical sensor device using a double metal SPP dielectric Bragg grating device according to another embodiment of the present invention.

In the optical sensor element 70 of FIG. 7, an object having any shape such as a solution, a gas, a solid, or the like to be detected in the arrow direction is flowed or adhered. Then, when the signal is injected into the optical sensor element 70, the input signal is absorbed by a signal of a specific frequency according to the detection material present on the optical sensor element 70.

That is, if a signal as shown in FIG. 7B is input to the photosensor element 70, a signal as shown in FIG. 7C is output from the photosensor element 70. As described above, the material existing in the optical sensor element 70 may be determined using the difference between the input and output signals of the optical sensor element 70.

8 is a diagram illustrating various structures of a double metal SPP dielectric Bragg grating device according to another embodiment of the present invention.

The bimetallic SPP dielectric Bragg grating device 80 shown in FIG. 8 shows that the planar structure of the upper layer metal layer 81 engraved with Bragg grating and the planar structure of the lower layer metals 82A, 82B, and 82C may be different. .

8A illustrates the upper metal layer 81 and the lower metal layers 82A, 82B, and 82C, and FIGS. 8B and 8C illustrate the lower metal layer illustrated in FIG. 8A. Lower metal layers 82B and 82C are shown in accordance with other embodiments that may replace 82A.

First, FIG. 8A shows that the planar shape of the upper metal layer 81 and the tapered planar shape formed on the left side of the lower metal layer 82A have a triangular shape. However, the triangular shape of the upper metal layer 81 has a height of d1, while the triangular shape of the lower metal layer 82A is a triangle having a height of d2. Therefore, it is unusual that the metal layer does not exist in the area | region corresponding to (d1-d2) * w in the lower metal layer 82A.

On the other hand, FIG. 8B shows that the lower metal layer 82B does not have a shape similar to that of the upper metal layer 81, and has a rectangular shape having a width of w. However, in FIG. 8B, it can be seen that the lower metal layer 82b has no metal layer formed in the region of d3 from the input surface and d3 from the output surface. In conclusion, the length of the lower metal layer 82B shown in FIG. 8B becomes L − (2 × d 3).

Finally, FIG. 8C shows that the lower metal layer 82C has a waveguide shape. Similarly, the lower metal layer 82C having a waveguide shape is also not formed in the section of d4 from the input surface and d4 from the output surface. As a result, the lower metal layer 82C shown in FIG. 8C has a length of L − (2 × d 4).

FIG. 9 is a view illustrating a method of manufacturing a double metal SPP dielectric Bragg grating in which Bragg grating is formed on an upper metal layer using a nanoimprinting technique.

As shown in FIG. 9A, the lower clad 92 is formed on the Si wafer 91. In this case, the lower clad 92 may be formed using a deposition or spinning technique. Thereafter, Ag ink 93 is dropped onto the lower clad 92 in accordance with FIG. 9B (Ag Ink Drop).

As shown in FIG. 9C, the Ag Grating 95 may be formed by covering the Master Stamp 94 with the structure formed in FIG. 9B and then baking at an appropriate pressure, temperature, and time. do.

After the baking is completed, the master stamp 94 is released, and the upper clad 96 is deposited or spin coated on the Ag Grating 95 to fabricate the double metal SPP dielectric Bragg grating device.

10 and 11 illustrate a method of fabricating a double metal SPP dielectric Bragg grating in which Bragg grating is formed under the upper metal layer using a nanoimprinting technique.

First, as shown in FIG. 10A, the lower clad 102 is formed on the Si wafer 101. According to FIG. 10B, the core 103 is deposited or spin coated on the lower clad 102.

Thereafter, a polymer 104 having the same refractive index as the core 103 is dropped on the core 103 according to FIG. 10C. 10, the grating layer 106 is removed by covering the polydimethylsiloxane (PDMS) stamp 105 and exposing for a predetermined time with a suitable pressure and UV power.

Thereafter, the PDMS stamp 105 is released (FIG. 11E), and Ag ink is spin-coated on the grating layer 106 as shown in FIG. 11F. Spin coding Ag ink forms Ag grating 107. Finally, by depositing or spin coating the upper clad 108 on the Ag grating 107, an SPP Bragg grating element having a MIM structure can be completed.

Although the present invention has been described in detail through the representative embodiments, those skilled in the art to which the present invention pertains can make various modifications without departing from the scope of the present invention. Will understand. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be defined by the claims below and equivalents thereof.

1 is a view showing the configuration of a nano plasmonic bimetal waveguide device according to an embodiment of the present invention.

2 illustrates a planar configuration of a nano plasmonic integrated circuit module according to another embodiment of the present invention.

3 is a view showing the configuration of an optical bench using the nano-plasmonic integrated circuit of FIG.

4 shows an optical signal transmitted through the optical bench shown in FIG.

5 is a view showing the structure of a double metal SPP metal Bragg grating device according to another embodiment of the present invention.

6 is a view showing the structure of a double metal SPP metal Bragg grating device according to another embodiment of the present invention.

7 is a view showing the configuration of an optical sensor device using a double metal SPP dielectric Bragg grating device according to another embodiment of the present invention.

8 illustrates various structures of a double metal SPP dielectric Bragg grating device according to another embodiment of the present invention.

FIG. 9 illustrates a method for fabricating a double metal SPP dielectric Bragg grating having Bragg grating formed on top of an upper metal layer using a nanoimprinting technique.

10 and 11 illustrate a method for fabricating a double metal SPP dielectric Bragg grating in which Bragg grating is formed under the upper metal layer using a nanoimprinting technique.

<Description of Symbols for Main Parts of Drawings>

10: double metal waveguide element 11: input double metal taper

12: Double metal waveguide 1 3: Output double metal taper

20: Nano plasmonic integrated circuit (NPIC) 21: Input double metal taper

22: double metal waveguide 23: output double metal taper

24: signal detection and processing unit 30: optical bench

31: laser diode (LD) 32, 33: photodiode (PD)

51, 61: upper metal layer 52, 62: lower metal layer

53, 63: dielectric layers 54, 64: Bragg grating structure

Claims (17)

A first metal layer; A dielectric layer formed on the first metal layer; And A second metal layer formed on the dielectric layer, The surface plasmon polariton Bragg grating device, characterized in that the metal Bragg grating structure is protruding in at least one position of the upper, lower or side portion of the second metal layer. The method of claim 1, The first metal layer or the second metal layer is a surface plasmon polariton Bragg grating element, characterized in that made of any one of a precious metal or a transition metal. The method of claim 1, The dielectric layer is a surface plasmon polariton Bragg grating device, characterized in that made of any one of silicon (Si), quartz (SiO2) or polymer (Polymer). A first metal layer; A dielectric layer formed on the first metal layer; And A second metal layer formed on the dielectric layer, And a Bragg grating structure formed of a dielectric having a refractive index different from that of the dielectric constituting the dielectric layer on the second metal layer. 5. The method of claim 4, One side of the Bragg grating structure is formed inside the dielectric layer, The surface plasmon polariton Bragg grating device is formed to contact the first metal layer and the second metal layer. In a nano plasmonic integrated circuit module, An input double metal taper for converging the optical signal received from the optical waveguide, converting the optical signal into a surface plasmonic polaritone signal and converging it to a size of several tens of microns; A dual waveguide device for transmitting the focused surface plasmon pleton signal; And And an output double metal taper for defocusing the surface plasmonic polariton signal transmitted to the dual waveguide device and converting the optical signal into an optical signal. The double waveguide device, A first metal layer; A dielectric layer formed on the first metal layer; And A second metal layer formed on the dielectric layer, And a Bragg grating structure protrudes from at least one of the upper, lower, and side portions of the second metal layer. The method of claim 6, The first metal layer or the second metal layer nanoplasmic integrated circuit module, characterized in that made of any one of a precious metal or a transition metal. The method of claim 6, The dielectric layer is a nano plasmonic integrated circuit module, characterized in that made of any one material of silicon (Si), quartz (SiO 2), polymer (Polymer). In a nano plasmonic integrated circuit module, An input double metal taper for converging the optical signal received from the optical waveguide, converting the optical signal into a surface plasmonic polaritone signal and converging it to a size of several tens of microns; A dual waveguide device for transmitting the focused surface plasmon pleton signal; And And an output double metal taper for defocusing the surface plasmonic polariton signal transmitted to the dual waveguide device and converting the optical signal into an optical signal. The double waveguide device, A first metal layer; A dielectric layer formed on the first metal layer; And A second metal layer formed on the dielectric layer, And a Bragg grating structure formed on the second metal layer with a dielectric having a different refractive index than the dielectric constituting the dielectric layer. 10. The method of claim 9, The first metal layer or the second metal layer nanoplasmic integrated circuit module, characterized in that made of any one of a precious metal or a transition metal. 10. The method of claim 9, The dielectric layer is a nano plasmonic integrated circuit module, characterized in that made of any one material of silicon (Si), quartz (SiO 2), polymer (Polymer). delete delete delete delete delete delete

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