KR101081146B1 - Semiconductor light emitting diode package of heat conduction type - Google Patents

Abstract

The present invention relates to the improvement of the heat transfer structure when the substrate portion of the semiconductor light emitting device is bound to the device frame, the heat conduction type semiconductor light emitting device package according to the present invention includes an LED unit consisting of a compound semiconductor; A substrate portion on which the LED portion is grown and a bottom surface of which is processed; An element frame to which the substrate unit is coupled; And a coupling part for binding the substrate part and the device frame.

According to the present invention, since the thermal bottleneck between the substrate portion and the coupling portion can be minimized, there is an effect of increasing the lifespan of the light emitting device and improving the reliability, and improving the optical characteristics by releasing heat more efficiently. It is possible to prevent degradation from occurring at the interface between the substrate portion and the bonding portion.

Description

Semiconductor light emitting diode package of heat conduction type

1 is a perspective view showing the structure of a conventional semiconductor light emitting device package.

Figure 2 is a side cross-sectional view showing the structure of the LED unit according to an embodiment of the present invention.

3 is a perspective view showing a form in which a thermally conductive semiconductor light emitting device according to a first embodiment of the present invention is provided in an element frame;

4 is a perspective view showing a form in which a thermally conductive semiconductor light emitting device according to a second embodiment of the present invention is provided in an element frame;

Description of the Related Art

100: LED unit 110: p-type electrode

120: p-type semiconductor layer 130: active layer

140: n-type semiconductor layer 150: n-type electrode

200: substrate portion 210, 220: uneven portion

300: coupling portion 400: element frame

The present invention relates to a semiconductor light emitting device.

In general, a light emitting diode (LED) is used as a semiconductor light emitting device, which is a device used to send and receive signals by converting an electric signal into infrared, visible light or light using characteristics of a compound semiconductor. to be.

Usually, the use range of LED is used in home appliances, remote controllers, electronic signs, indicators, and various automation devices, and the types are largely divided into Infrared Emitting Diode (IRD) and Visible Light Emitting Diode (VLED).

Such LEDs are used in home appliances, electronic displays, and the like according to the intensity of light output. In particular, LEDs are becoming smaller and slimmer in information and communication devices, and peripheral devices such as resistors, capacitors, and noise filters are also used. It is becoming smaller.

Therefore, in order to be directly mounted on a printed circuit board (PCB), a surface mount device (Surface Mount Device) type is made, and accordingly, an LED lamp used as a display element is also developed in a SMD type.

Such SMD can replace the existing simple lighting lamp, which is used for lighting indicators of various colors, character display, and image display. As the usage area of LED is expanded as described above, Increasingly, the brightness required for rescue signal lamps and the like is increasing, and high power light emitting diodes are widely used in recent years.

1 is a perspective view showing the structure of a conventional semiconductor light emitting device package.

Referring to FIG. 1, a conventional semiconductor light emitting device package includes a LED unit 10, a substrate unit 20, a coupling unit 30, and an element frame (die) 40, on the substrate unit 20. The LED unit 10 is grown and bound to the device frame 40 through the coupling unit (usually, paste is used) 30.

In general, since the substrate 20 is made of a non-metal material, the thermal conductivity is significantly low, and is formed to a thickness of 80 to 100 micrometers or more to prevent breakage. As the thickness increases, the heat dissipation efficiency is further reduced.

Therefore, since heat emitted from the LED unit 10 is not sufficiently transmitted to the coupling unit 30, a thermal bottleneck occurs.

Due to the thermal bottleneck, the coupling part 30 is deteriorated at the interface between the coupling part 30 and the substrate part 20, thereby deteriorating optical characteristics and adversely affecting the reliability of the device.

Accordingly, an object of the present invention is to provide a thermally conductive semiconductor light emitting device package that increases heat dissipation area of the substrate portion so that heat generated from the LED portion can be better transferred to the coupling portion through the substrate portion.

In order to achieve the above object, the thermally conductive semiconductor light emitting device package according to the present invention comprises an LED unit consisting of a compound semiconductor; A substrate portion on which the LED portion is grown and a bottom surface of which is processed; An element frame to which the substrate unit is coupled; And a coupling part for binding the substrate part and the device frame.                     

Hereinafter, a thermally conductive semiconductor light emitting device package according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

2 is a side cross-sectional view showing the structure of the LED unit 100 according to an embodiment of the present invention.

Referring to FIG. 2, the LED unit 100 according to the embodiment of the present invention includes a p-type electrode 110, a p-type semiconductor layer 120, an active layer 130, an n-type semiconductor layer 140, and an n-type electrode ( 150).

In general, a blue LED has an n-type nitride layer (the n-type semiconductor layer 140) formed on a sapphire substrate. Since the nitride semiconductor has a light emitting region covering ultraviolet, blue and green regions, it is suitable for display purposes. Both the p-type electrode 110 and the n-type electrode 150 has a structure that is manufactured on the substrate.

In other words, nitride semiconductors using nitrogen-containing III-V compounds have direct transition-type band widths ranging from 1.9 eV (InN) to 6.2 eV (AlN), resulting in light processing in the broad wavelength range from visible to ultraviolet. This is possible.

The n-type electrode 150 is formed on one side of the surface of the n-type semiconductor layer 140, and the active layer 130 is formed in addition to the region where the n-type electrode 150 is formed.

The active layer 130 is a layer for generating light by combining holes transmitted through the p-type electrode 110 and electrons transmitted through the n-type electrode 150.

The p-type semiconductor layer 120 is formed on the active layer 130, and the p-type electrode 110 is formed on the p-type semiconductor layer 120.

3 is a perspective view illustrating a structure in which the thermally conductive semiconductor light emitting device (the LED unit 100 and the substrate unit 200) according to the first embodiment of the present invention is provided in the device frame 400, and FIG. A heat conductive semiconductor light emitting device (the LED unit 100 and the substrate unit 200) according to the second embodiment of the present invention is a perspective view showing a form provided in the element frame 400.

Referring to FIG. 3, the LED unit 100 according to the first embodiment of the present invention described with reference to FIG. 2 is grown on the substrate unit 200 and the substrate unit 200 is coupled to the coupling unit 300. A shape of a semiconductor light emitting device package that is coupled to the device frame 400 is illustrated.

When the LED unit 100 is grown on the substrate unit 200 to form an electrode, a lapping and polishing process is performed.

Here, the lapping process is to grind the substrate 200 to a medium particle size (~ 1,000 to 1,200 times), and when the particle size is larger than the particle size, the lapping process is separated into a polishing process.

The lapping process may be treated with single sided lapping or double sided lapping, and as the abrasive used, carborandam or alumina is used.

In addition, the polishing process is a process of processing the substrate portion glossy, since the function of the substrate portion is often applied in accordance with the advanced, high precision and advanced of the semiconductor light emitting device.

As an abrasive, what melt | dissolved alumina in water is used, and it grind | polishs, being dripped on the rotating plate which covered with abrasive cloth. The polishing process includes mechanical polishing, chemical polishing and chemical / mechanical polishing.

In general, the substrate portion is processed into an abrasive having a particle diameter of 10 μm to 12 μm in the lapping process and the polishing process.                     

Subsequently, the substrate portion 200 has a rectangular concave-convex 210 is formed on the bottom surface, an etching process or a milling process may be used.

The unevenness is formed on the bottom of the substrate portion 200 to maximize the heat dissipation efficiency by increasing the contact area with the coupling portion 300.

In order to have the above-described structure, first, the substrate portion 200 has irregularities formed on the bottom surface, and after the LED portion 100 is grown, a scribing process and a breaking process are performed to separate chips. The LED unit 100 and the substrate unit 200 are bound to the device frame Die (die) 400 through a paste 300 to be finally manufactured.

The concave-convex 210 formed on the bottom surface of the substrate 200 may have various forms such as a triangular shape or a circular shape.

Referring to FIG. 4, the substrate portion 200 of the thermally conductive semiconductor light emitting device package according to the second embodiment of the present invention may have a triangular irregularity 220 formed on a bottom surface thereof.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications other than those described above are possible. For example, each component specifically shown in the embodiments of the present invention can be modified and implemented. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

As described above, according to the thermally conductive semiconductor light emitting device package according to the present invention, since the thermal bottleneck between the substrate portion and the coupling portion can be minimized, the lifespan of the light emitting device can be improved and reliability can be improved. have.

In addition, according to the present invention, heat is more efficiently emitted, thereby improving optical characteristics and preventing deterioration at the interface between the substrate portion and the bonding portion, thereby providing a structurally more robust thermally conductive semiconductor light emitting device package. .

Claims (5)

LED unit consisting of a compound semiconductor; A substrate portion on which the LED portion is grown and a bottom surface of which is processed; An element frame to which the substrate unit is coupled; And It includes a coupling portion for binding the substrate portion and the device frame, The thermally conductive semiconductor light emitting device package of the substrate portion and the coupling portion in contact with the concave-convex structure. The method of claim 1, wherein the substrate portion A heat conduction type semiconductor light emitting device package, the bottom surface of which is irregularly processed into a rectangular, circular or triangular shape. The method of claim 1, wherein the substrate portion Thermally conductive semiconductor light emitting device package that is processed unevenly after lapping and polishing. The method of claim 1, wherein the substrate portion Thermally conductive semiconductor light emitting device package that is processed unevenly through a milling process. The method of claim 1, wherein the substrate portion Thermally conductive semiconductor light emitting device package that is processed unevenly through an etching process.

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