KR101081072B1 - Solar cell and method of fabricating the same - Google Patents

Solar cell and method of fabricating the same Download PDF

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KR101081072B1
KR101081072B1 KR1020090053233A KR20090053233A KR101081072B1 KR 101081072 B1 KR101081072 B1 KR 101081072B1 KR 1020090053233 A KR1020090053233 A KR 1020090053233A KR 20090053233 A KR20090053233 A KR 20090053233A KR 101081072 B1 KR101081072 B1 KR 101081072B1
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layer
protective layer
solar cell
groove
light absorbing
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KR1020090053233A
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KR20100134882A (en
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배도원
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엘지이노텍 주식회사
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

A photovoltaic device and a method of manufacturing the same are disclosed. The solar cell apparatus includes a substrate; An electrode layer disposed on the substrate; A light absorbing layer disposed on the electrode layer; A window layer disposed on the light absorbing layer; Grooves formed in the light absorbing layer or the window layer; A first protective layer formed on the window layer; And a second protective layer formed on the first protective layer and having a higher melting point than the first protective layer. The solar cell apparatus according to the embodiment uses two protective layers having different physical properties. As a result, even when the solar cell apparatus is used for a long time, the moisture resistance is improved to prevent electrochemical and chemical corrosion of the cell, and provide a function of protecting the cell from external shock.

Solar cell, CIGS, protective layer, corrosion protection, buffer.

Description

SOLAR CELL AND METHOD OF MANUFACTURING THEREOF {SOLAR CELL AND METHOD OF FABRICATING THE SAME}

Embodiments relate to a photovoltaic device and a method of manufacturing the same.

Recently, as the demand for energy increases, development of solar cells for converting solar energy into electrical energy is in progress.

In particular, CIGS-based solar cells that are pn heterojunction devices having a substrate structure including a glass substrate, a metal back electrode layer, a p-type CIGS-based light absorbing layer, a high resistance buffer layer, an n-type window layer, and the like are widely used.

The encapsulation (or lamination) method using a conventional EVA film is damaged due to solar cell sealing due to long-term use of the solar cell or due to external thermal and physical shocks. Moisture can lead to efficiency degradation and module disposal due to corrosion of solar cells (electrochemical and general chemical corrosion).

In the case of using a solar cell, the cell of the solar cell may be corroded due to penetration of moisture and contaminants through the groove of the panel.

The embodiment is to provide a photovoltaic device having an improved efficiency, preventing a strong corrosion phenomenon.

Photovoltaic device according to one embodiment includes a substrate; An electrode layer disposed on the substrate; A light absorbing layer disposed on the electrode layer; A window layer disposed on the light absorbing layer; Grooves formed in the light absorbing layer or the window layer; A first protective layer formed on the window layer; And a second protective layer formed on the first protective layer and having a higher melting point than the first protective layer.

The solar cell apparatus according to the embodiment further includes a filling part disposed in the groove extending downward of the first protective layer.

In the solar cell apparatus according to the embodiment, the first protective layer is a material represented by Chemical Formula I below,

Figure 112009036226440-pat00001

Formula I

The second protective layer is a material represented by the following formula (II),

Figure 112009036226440-pat00002

Formula II

N value of the first protective layer is larger than y value of the second protective layer.

In one embodiment, the first protective layer may contain ethylene vinyl acetate (EVA), the vinyl acetate (VA) content may be 40% to 50% by weight.

The solar cell apparatus according to the exemplary embodiment includes an adhesive force between the first protective layer and the solar cell panel superior to that of the first protective layer and the second protective layer.

In one embodiment, the second protective layer may include ethylene vinyl acetate (EVA), oriented polypropylene (OPP), or non-stretched polypropylene (CPP).

In one embodiment, the second protective layer may have a VA content of 25% to 35% by weight.

According to one or more exemplary embodiments, a method of manufacturing a solar cell apparatus includes: forming a solar cell panel having grooves; Forming a first protective layer on the solar cell panel; Forming a second protective layer having a higher melting point than the first protective layer; And applying heat and pressure to the first passivation layer to extend below the first passivation layer to place the filling part inside the groove.

According to one or more exemplary embodiments, a method of manufacturing a solar cell apparatus includes extending heat below the first protective layer to arrange a filling part in the groove to apply heat in a range of 120 ° C. to 150 ° C.

The solar cell apparatus according to the embodiment uses two protective layers having different physical properties. As a result, even when the solar cell apparatus is used for a long time, the moisture resistance is improved to prevent electrochemical and chemical corrosion of the cell, and provide a function of protecting the cell from external shock.

The solar cell apparatus according to the embodiment includes a first protective layer formed on the window layer.

In addition, the solar cell apparatus according to the embodiment includes a filling unit disposed in the groove formed in the light absorbing layer or the window layer.

Therefore, the solar cell apparatus according to the embodiment has excellent adhesion through maximizing the adhesion area of the solar cell panel and the first protective layer. In addition, since the material of the first protective layer is filled in the groove formed in the solar cell panel (especially, the light absorbing layer or the window layer), it is possible to prevent the sealing of the solar cell from being damaged by an external impact. In addition, the solar cell can be prevented from being corroded by external moisture inflow. In addition, insulation may be ensured by using an insulating material as the material of the first protective layer.

The solar cell apparatus according to the embodiment includes a second protective layer formed on the first protective layer.

Therefore, the solar cell apparatus according to the embodiment protects the solar cell panel from external impact and has excellent durability. In addition, the photovoltaic device according to the embodiment can prevent corrosion and efficiency deterioration even when used for a long time.

Therefore, the solar cell apparatus according to the embodiment has excellent corrosion protection and durability, and has improved efficiency.

In the description of the embodiments, each substrate, film, electrode, groove or layer or the like is described as being formed "on" or "under" of each substrate, film, electrode, groove or layer or the like. In the case, “on” and “under” include both directly or “indirectly” (indirectly). Reference to the following will be described with reference to the drawings, the size of each component in the drawings may be exaggerated for description, and does not mean the size that is actually applied.

1 shows a cross-sectional view of a solar cell apparatus according to an embodiment.

Referring to FIG. 1, the support substrate 100 has a plate shape, and includes a back electrode layer 200, a light absorbing layer 300, a buffer layer 400, a high resistance buffer layer 500, a window layer 600, and connection portions. 700, the first passivation layer 800, the filling parts 810, 820, and 830, and the second passivation layer 900.

The support substrate 100 may be an insulator. The support substrate 100 may be a glass substrate, a plastic substrate, or a metal substrate. More specifically, the support substrate 100 may be a soda lime glass substrate. The supporting substrate 100 may be transparent. The support substrate 100 may be rigid or flexible.

The back electrode layer 200 is disposed on the support substrate 100. The back electrode layer 200 is a conductive layer. Examples of the material used for the back electrode layer 200 include a metal such as molybdenum.

The back electrode layer 200 includes a plurality of back electrodes 210, 220... Which are divided by the first groove TH1. The back electrodes 210, 220... Are spaced apart from each other. An interval between the back electrodes 210, 220... May be about 10 nm to 70 μm.

The back electrodes 210, 220... Are arranged in a stripe shape. The back electrodes 210, 220... Correspond to the respective cells C1, C2.

Alternatively, the back electrodes 210, 220... May be arranged in a matrix form.

The light absorbing layer 300 is disposed on the back electrode layer 200. The light absorbing layer 300 includes a Group I-Group III-VI compound. For example, the light absorbing layer 300 may be formed of a copper-indium-gallium-selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) crystal structure, copper-indium-selenide-based (CIS), or copper- It may have a gallium-selenide-based (CGS-based) crystal structure.

The energy band gap of the light absorption layer 300 may be about 1 eV to 1.8 eV.

The light absorbing layer 300 includes a plurality of light absorbing portions 310, 320... Which are divided by the second groove TH2 and the third groove TH3. The light absorbing parts 310 and 320... Are spaced apart from each other, and correspond to the back electrodes 210, 220.

The buffer layer 400 is disposed on the light absorbing layer 300. The buffer layer 400 includes cadmium sulfide (CdS), and the energy band gap of the buffer layer 400 is about 2.2 eV to 2.4 eV.

The buffer layer 400 includes a plurality of buffers 410, 420... Which are divided by the second groove TH2 and the third groove TH3. The buffers 410, 420... Are spaced apart from each other. In addition, the buffers 410, 420... Correspond to the light absorbing portions 310, 320.

The high resistance buffer layer 500 is disposed on the buffer layer 400. The high resistance buffer layer 500 includes zinc oxide (i-ZnO) that is not doped with impurities. The energy bandgap of the high resistance buffer layer 500 is about 3.1 eV to 3.3 eV.

The high resistance buffer layer 500 includes a plurality of high resistance buffers 510, 520... Which are divided by the second groove TH2 and the third groove TH3. The high resistance buffers 510, 520... Are spaced apart from each other. In addition, the high resistance buffers 510, 520... Correspond to the light absorbing portions 310, 320.

The window layer 600 is disposed on the high resistance buffer layer 500. The window layer 600 is transparent and is a conductive layer. Examples of the material used as the window layer 600 include aluminum doped ZnO (AZO).

The window layer 600 includes a plurality of windows 610, 620... Which are divided by the third groove TH3. The windows 610, 620 ... are spaced apart from each other. The spacing between the windows 610, 620... Is about 10 nm to about 70 μm.

The windows 610, 620... Have a shape corresponding to the back electrodes 210, 220. That is, the windows 610, 620... Are arranged in a stripe shape. Alternatively, the windows 610, 620... May be arranged in a matrix form.

The window layer 600 is an n-type conductive layer for supplying holes to the light absorbing layer 300. In addition, the windows 610, 620... May perform an electrode function.

The second groove TH2 penetrates the light absorbing layer 300, the buffer layer 400, and the high resistance buffer layer 500, and the third groove TH3 is the light absorbing layer 300 and the buffer layer 400. ) And penetrates the high resistance buffer layer 500 and the window layer 600.

In addition, a plurality of cells C1, C2... Are defined by the third groove TH3. That is, the photovoltaic device according to the embodiment is divided into the cells C1, C2... By the third groove TH3.

The connection parts 700 are disposed on side surfaces of the absorbers, the buffers 410, 420..., And the high resistance buffers 510, 520. That is, the connection parts 700 are disposed inside the second groove TH2. Each of the connection parts 700 extends downward from the window layer 600 and directly contacts the back electrode layer 200.

Accordingly, the connection part 700 connects the window and the back electrode included in the cells C1, C2 ... adjacent to each other. That is, the connection part 700 connects the window 610 included in the first cell C1 and the back electrode 220 included in the second cell C2 adjacent to the first cell C1.

The connection parts 700 are integrally formed with the windows 610, 620... That is, the material used as the connection parts 700 is the same as the material used as the window layer 600.

The first passivation layer 800 is disposed on the window layer 600.

The first protective layer 800 is an insulating layer, a buffer layer, and a contact layer. The material used as the first passivation layer 800 may include a material having high permeability and excellent contact such as ethylene vinyl acetate (EVA).

In one embodiment, the first protective layer 800 has a high content of vinyl acetate (VA) and thus has a low melting point and a softening point. The first protective layer 800 uses an EVA film having improved adhesion. In the EVA film used for the first protective layer 800, the VA content may be 40 wt% to 100 wt%, preferably 40 wt% to 50 wt%.

A fourth groove TH4 is formed in a portion of the window layer 600. The filling parts 810 and 820 may extend downward from the first passivation layer 800 to be disposed inside the third groove TH3 and the fourth groove TH4. The filling part 830 corresponds to the first groove TH1.

The material used for the filling parts 810, 820, and 830 is the same as the material used for the first protective layer.

Therefore, the material used as the filling parts has a high content of VA and thus a low melting point and a softening point. For this reason, when heat and pressure are applied, fluidity may occur, and filling parts 810, 820, and 830 may be disposed in the grooves on the solar cell panel. The filling parts 810, 820, and 830 may extend downward from the first protective layer 800.

Therefore, the solar cell apparatus according to the embodiment may have excellent adhesion through maximizing the adhesion area between the panel, the first protective layer 800 and the filling parts 810, 820, and 830. In addition, the filling parts 810, 820, and 830 may be disposed to extend from the first protective layer 800 in the groove formed on the solar cell panel. For this reason, the sealing of a solar cell can be prevented from being damaged from an external shock. In addition, the solar cell may be prevented from being corroded due to external moisture inflow. In addition, insulation may be secured by using an insulating material as the filling parts 810, 820, and 830.

The second protective layer 900 is disposed on the first protective layer 800. The second protective layer 900 is transparent, durable, and an insulating layer. Examples of the material used as the second protective layer 900 are permeability and excellent durability, such as ethylene vinyl acetate (EVA), oriented polypropylene (OPP) or non-stretched polypropylene (casting polypropylene). It may include a material having a.

In one embodiment, the second passivation layer 900 has a lower content of vinyl acetate (VA) than the first passivation layer and thus has a high melting point and a softening point. Therefore, the second protective layer 900 may be a durable EVA film at room temperature, durable. In the second protective layer 900, the VA content is 20% to 40% by weight, preferably 25% to 35% by weight.

In one embodiment, the second protective layer 900 includes stretched polypropylene (OPP) or unstretched polypropylene (CPP), which is transparent, has excellent moisture resistance, and is durable.

Therefore, the solar cell apparatus according to the embodiment protects the solar cell panel from external impact and has excellent durability. In addition, even long-term use can prevent corrosion and deterioration of efficiency.

In one embodiment, the total thickness of the first protective layer 800 and the second protective layer 900 is adjustable to about 0.1 mm to 0.6 mm, preferably 0.2 mm to 0.45 mm.

In one embodiment, the first protective layer 800 is a material represented by the formula (I)

Figure 112009036226440-pat00003

Formula I

The second protective layer 900 is a material represented by the following formula (II),

Figure 112009036226440-pat00004

Formula II

N value of the first passivation layer 800 is greater than y value of the second passivation layer 900.

Where Formula I and Formula II represent monomers of ethylene vinyl acetate (EVA). Accordingly, m and n in the formula (I) are the number of units ethylene and vinyl acetate, respectively, and m and n are determined according to the weight ratio of ethylene and vinyl acetate, respectively. m and n are each an integer of 10-1000. Vinyl acetate in formula (I) is preferably 40% to 50% by weight. In addition, in Formula II, x and y are the number of unit ethylene and vinyl acetate, respectively, and x and y are determined according to the weight ratio of ethylene and vinyl acetate, respectively. x and y are each an integer of 10-1000. Vinyl acetate in the formula (II) is preferably 25% to 35% by weight.

The change in melting point according to the vinyl acetate (VA) content is as follows.

VA content (%) 5 18 27 Melting point (캜) 103 to 106 85 to 88 68-70

In addition, the softening point according to the vinyl acetate (VA) content is as follows.

VA content (%) 8 19 28 33 Softening point (℃) 74 64 42 40 or less

Therefore, the first protective layer 800 has a higher VA content than the second protective layer 900 and thus has a lower melting point and softening point. Therefore, when heat and pressure are applied to the first passivation layer 800, the filling parts 810, 820, and 830 may extend downward from the first passivation layer 800 to be disposed inside the grooves. have. Accordingly, the first protective layer 800 and the filling parts 810, 820, and 830 disposed in the grooves have an excellent adhesive strength with the solar cell panel by enlarging an adhesive area with the panel. In addition, it acts as a buffer against external shocks, and can prevent corrosion caused when water is introduced.

The problem that occurs when moisture penetrates the solar cell panel is that the series resistance may increase in the window layer, which is the front electrode. In addition, a short circuit of the light absorbing layer may occur in TH1. In addition, corrosion of the window layer and the back electrode layer may occur in TH4, and corrosion may occur in the MO, which is a rear electrode in TH3.

However, the solar cell apparatus according to the embodiment extends downward from the first protective layer 800 so that the filling parts 810, 820, and 830 are disposed in the grooves. Therefore, the above problems can be prevented. In addition, moisture penetration may be prevented due to the excellent moisture barrier property of the second protective layer 900. In addition, it is durable and can protect a solar cell from an external shock.

A transparent protective substrate formed of tempered glass may be further disposed on the second protective layer 900.

In addition, the first passivation layer 800 and the second passivation layer 900 may perform an antireflection function so that light is efficiently incident on the window layer 600.

The material used as the filling parts 810 and 820 may have insulation.

Therefore, the solar cell apparatus according to the embodiment can prevent the short between the cells C1, C2 ....

The area from the second groove TH2 to the third groove TH3 is an inactive area NAR.

The solar cell apparatus according to the embodiment increases the area of the active region AR for converting sunlight into electrical energy and has improved efficiency.

The first protective layer 800 may be strongly attached to the window layer 600. That is, the filling parts 810 and 820 may be inserted into the third groove TH3 and the fourth groove TH4. As a result, the adhesion area with the window layer is increased, thereby improving adhesion.

2 to 7 are cross-sectional views illustrating a method of manufacturing the solar cell apparatus according to the embodiment. In one embodiment, reference is made to the above-described embodiment, and the description of the above-described photovoltaic device may be combined with the description of the manufacturing method of the embodiment.

Referring to FIG. 2, the back electrode layer 200 is formed on the support substrate 100, and the back electrode layer 200 is patterned to form a first groove TH1. As a result, a plurality of back electrodes 210, 220... Are formed on the substrate. The back electrode layer 200 is patterned by a laser.

The first groove TH1 exposes an upper surface of the support substrate 100 and has a width of about 10 nm to about 70 nm.

In addition, an additional layer such as a diffusion barrier may be interposed between the support substrate 100 and the back electrode layer 200, wherein the first groove TH1 exposes an upper surface of the additional layer.

Referring to FIG. 3, the light absorbing layer 300, the buffer layer 400, and the high resistance buffer layer 500 are sequentially formed on the back electrode layer 200.

The light absorbing layer 300 may be formed by a sputtering process, a vacuum method, or an evaporation method.

For example, copper, indium, gallium, selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) while evaporating copper, indium, gallium, and selenium simultaneously or separately to form the light absorbing layer 300. The method of forming the light absorbing layer 300 and the method of forming the metal precursor film by the selenization process are widely used.

When the metal precursor film is formed and selenization is subdivided, a metal precursor film is formed on the back electrode 200 by a sputtering process using a copper target, an indium target, and a gallium target.

Thereafter, the metal precursor film is formed of a copper-indium-gallium-selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) light absorbing layer by a selenization process.

Alternatively, the sputtering process and the selenization process using the copper target, the indium target, and the gallium target may be simultaneously performed.

Alternatively, the CIS-based or CIG-based optical absorption layer 300 can be formed by using only a copper target and an indium target, or by a sputtering process and a selenization process using a copper target and a gallium target.

Thereafter, cadmium sulfide is deposited on the light absorbing layer 300 by a CBD deposition method, a vacuum deposition method, or a sputtering process, and the buffer layer 400 is formed.

Thereafter, zinc oxide is deposited on the buffer layer 400 by a DC or RF sputtering process, and the high resistance buffer layer 500 is formed.

Referring to FIG. 4, a portion of the light absorbing layer 300, the buffer layer 400, and the high resistance buffer layer 500 is removed to form a second groove TH2. The second groove TH2 penetrates the light absorbing layer 300, the buffer layer 400, and the high resistance buffer layer 500.

The second groove TH2 may be formed by a mechanical device such as a tip or a laser device.

For example, the light absorbing layer 300 may be patterned by a tip having a width of about 50 μm to about 110 μm. In addition, the second groove TH2 may be formed by a laser having a wavelength of about 200 to 600 nm.

In this case, the width of the second groove TH2 may be about 100 μm to about 200 μm. In addition, the second groove TH2 is formed to expose a portion of the top surface of the back electrode layer 200.

Referring to FIG. 5, a window layer 600 is formed on the high resistance buffer layer 500. In this case, a material forming the window layer 600 is disposed inside the second groove TH2.

Accordingly, a connection part extending from the window layer 600 and directly connected to the back electrode layer 200 is formed inside the second groove TH2.

In order to form the window layer 600, a transparent conductive material is stacked on the high resistance buffer layer 500. The transparent conductive material is disposed inside the second groove TH2. Examples of the transparent conductive material include aluminum doped zinc oxide and the like.

Referring to FIG. 6, a portion of the light absorbing layer 300, the buffer layer 400, the high resistance buffer layer 500, and the window layer 600 is removed to form a third groove TH3, and the window A fourth groove TH4 is formed in part of the layer 600. That is, the light absorbing layer 300, the buffer layer 400, the high resistance buffer layer 500, and the window layer 600 are patterned to define a plurality of windows 610, 620...

The third groove TH3 exposes an upper surface of the back electrode layer 200.

The fourth groove TH4 is formed without exposing the top surface of the back electrode layer 200. In addition, the fourth groove TH4 may be formed when the material of the window layer 600 is not completely filled inside the second groove TH2.

The third groove TH3 may be formed by a mechanical device such as a tip or a laser device.

For example, by the tip, the window layer 600 may be patterned. In addition, the third groove TH3 may be formed by a laser having a wavelength of about 200 to 600 nm.

The width of the third groove TH3 may be about 10 μm to about 100 μm.

The width of the fourth groove TH4 may be about 10 μm to about 50 μm.

By the second groove TH2 and the third groove TH3, the light absorbing layer 300 is divided into a plurality of light absorbing portions 310, 320.

In addition, a plurality of cells C1, C2... Are defined by the third groove TH3.

Referring to FIG. 7, a first passivation layer 800 is formed on the window layer 600. In addition, the filling parts 810, 820... Are extended downward from the first protective layer 800. In addition, a second passivation layer 900 is formed on the first passivation layer 800.

The first protective layer 800 and the second protective layer disposed on the window layer 600 are formed by applying heat and pressure. During the application of heat and pressure, the filling parts 810 and 820 are disposed inside the third groove TH3 and the fourth groove TH4.

The heat and pressure applying process may use a hot press process.

The heat treatment process applies heat in the range of 100 ° C. to 200 ° C., preferably in the range of 120 ° C. to 150 ° C.

The first protective layer has a higher VA content than the second protective layer, and thus has a lower melting point and softening point. Therefore, in the process of applying the heat and pressure, the first protective layer first becomes fluid. Accordingly, the filling parts 810, 820, and 830 extend downward from the first passivation layer 800 to be disposed in the grooves TH2, TH3, and the like.

For example, the material of the filling parts 810, 820, and 830 may penetrate into the grooves TH2, TH3, and the like, and be completely disposed in the grooves TH2, TH3, and the like.

In addition, since the material of the filling parts 810, 820, and 830 has excellent fluidity, the filling parts 810, 820, and 830 may be evenly distributed in the grooves TH2 and TH3.

Thereafter, as the temperature increases, the second protective layer 900 is finally formed. In addition, the upper portion of the second protective layer 900 is cured.

Therefore, high adhesion between interfaces may be secured due to the first protective layer 800 and the filling parts 810, 820, and 830. In addition, it is possible to ensure high durability at the same time due to the second protective layer (900).

Therefore, increasing the interfacial adhesion between the solar cell and the first protective layer 800 and maximizing the adhesion area provide moisture resistance and corrosion resistance against moisture penetration that may occur during long-term use.

In one embodiment, when the first protective layer 800 and the second protective layer 900 are formed, lamination and a curing press may be simultaneously performed in the laminator.

In one embodiment, when the first protective layer 800 and the second protective layer 900 are formed, a curing press process may be independently performed in an autoclave after lamination.

Although the above has been described with reference to the embodiments, these are merely examples and are not intended to limit the present invention, and those skilled in the art to which the present invention pertains should not be exemplified above within the scope not departing from the essential characteristics of the present embodiments. It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to these modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

1 is a cross-sectional view showing a cross section of the solar cell apparatus according to the embodiment.

2 to 7 are cross-sectional views illustrating a method of manufacturing the solar cell apparatus according to the embodiment.

Claims (8)

Board; An electrode layer disposed on the substrate; A light absorbing layer disposed on the electrode layer; A solar cell panel including a window layer disposed on the light absorbing layer; Grooves formed in the light absorbing layer or the window layer; A first protective layer formed on the window layer; And The photovoltaic device of claim 1, further comprising a second protective layer formed on the first protective layer and having a higher melting point than the first protective layer. The method of claim 1, The photovoltaic device further includes a filling unit extending below the first protective layer and disposed inside the groove. The method of claim 2, The first protective layer is a material represented by the following formula (I),
Figure 112009036226440-pat00005
 Formula I The second protective layer is a material represented by the following formula (II),
Figure 112009036226440-pat00006
 Formula II Here, the n value of the first protective layer is a photovoltaic device comprising a larger than the y value of the second protective layer. The method of claim 3, wherein The first protective layer is a photovoltaic device comprising a vinyl acetate (VA) content of 40% by weight to 50% by weight. The method of claim 2, The photovoltaic device of claim 1, wherein the adhesion of the first protective layer and the solar cell panel is superior to that of the first protective layer and the second protective layer. The method of claim 2, The second protective layer is a photovoltaic device comprising oriented polypropylene (OPP) or non-stretched polypropylene (CPP). Forming a grooved solar cell panel; Forming a first protective layer on the solar cell panel; Forming a second protective layer having a higher melting point than the first protective layer; And And applying heat and pressure to the first passivation layer to extend below the first passivation layer to place the filling part inside the groove. The method of claim 7, wherein The method of manufacturing a photovoltaic device comprising extending heat below the first protective layer and disposing a filling part in the groove may include applying heat in a range of 120 ° C. to 150 ° C.
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JP2001053311A (en) 1999-08-13 2001-02-23 Kanegafuchi Chem Ind Co Ltd Method for manufacturing solar cell module
JP2001102615A (en) 1999-09-28 2001-04-13 Kanegafuchi Chem Ind Co Ltd Method for manufacturing solar cell module
JP2004055970A (en) 2002-07-23 2004-02-19 Fuji Electric Holdings Co Ltd Solar battery and its manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001053311A (en) 1999-08-13 2001-02-23 Kanegafuchi Chem Ind Co Ltd Method for manufacturing solar cell module
JP2001102615A (en) 1999-09-28 2001-04-13 Kanegafuchi Chem Ind Co Ltd Method for manufacturing solar cell module
JP2004055970A (en) 2002-07-23 2004-02-19 Fuji Electric Holdings Co Ltd Solar battery and its manufacturing method

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