KR101050735B1 - Cooling type infrared detector and manufacturing method thereof - Google Patents
Cooling type infrared detector and manufacturing method thereof Download PDFInfo
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- KR101050735B1 KR101050735B1 KR1020100133751A KR20100133751A KR101050735B1 KR 101050735 B1 KR101050735 B1 KR 101050735B1 KR 1020100133751 A KR1020100133751 A KR 1020100133751A KR 20100133751 A KR20100133751 A KR 20100133751A KR 101050735 B1 KR101050735 B1 KR 101050735B1
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- South Korea
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- detection element
- short wavelength
- wavelength detection
- medium
- wavelength
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Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/0271—Housings; Attachments or accessories for photometers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
- G01J1/08—Arrangements of light sources specially adapted for photometry standard sources, also using luminescent or radioactive material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/0215—Compact construction
- G01J5/022—Monolithic
Abstract
Description
The present invention relates to a cooled infrared detector and a method for manufacturing the same, and more particularly, to a flare point heat source for avoiding medium-wavelength infrared rays and guided missiles, which are point heat sources of target aircraft of small anti-aircraft weapons. Cooled infrared detector that can simultaneously detect infrared rays of short wavelength band, and also make short package detector and medium wavelength detector into one package so that process stabilization and signal processing can be effectively performed by miniaturizing and simplifying missiles; It relates to a manufacturing method.
Until now, the development of infrared detectors has been mainly carried out with short wave length infrared (SWIR) of 1 to 3 μm, middle wave length infrared (MWIR) of 3 to 5 μm, and long wave length of 8 to 12 μm. Infrared (LWIR) has focused on devices that can detect infrared light in the wavelength range. However, recently, in order to obtain more accurate and more information about a target, an element capable of simultaneously detecting infrared rays of two or more wavelength bands that can be operated independently is required. Hereinafter, an element that detects only one infrared ray in the infrared band is called a monochromatic infrared detector, and an element that detects an infrared ray in two or more wavelength bands is called a polychromatic infrared detector.
On the other hand, the conventional detector for the large target target achieves IRCCM (InfraRed Counter Counter Measure) for the large target by optical alignment and detector signal phase adjustment of two detectors of short wavelength and medium wavelength band, or one medium wavelength detector and one reticle And modulate the detector signal to achieve IRCCM.
FIG. 1 shows an example of two detectors for detecting a short wavelength band and a medium wavelength band according to the related art, and FIG. 2 is a view showing the element shape of each detector when the detector of FIG. 1 is viewed from the left side. When the detector of FIG. 1 is rotated except for the signal processor, the target target and the point target of the flare rotate in a circle on the short wavelength and medium wavelength detection elements as shown by the red dots of FIG. And a signal is generated in the medium wavelength detector, and the wavelength band is divided according to output signals of the short wavelength detector and the medium wavelength detector. However, when implementing IRCCM using two detectors for detecting short and medium wavelength bands, the manufacturing cost is high because two detectors are used, and the optical and mechanical assembly adjustment process is complicated, so that flare differs in wavelength. There is a problem that it is difficult to apply the IRCCM function using the kinematic properties of.
FIG. 3 is a view showing an example of a conventional bar cross-shaped detector, and FIG. 4 is a diagram showing a cross-shaped device when the detector of FIG. 3 is viewed from the left side. The bar-shaped cross detector is a medium wavelength band detector. When the portion except the IR detector and the signal processor rotates as shown in FIG. 3, the target is shown as a red dot on the cross-shaped element as shown in FIG. In turn, IRCCM implements signal processing using various flare kinematic and physical properties. By the way, when implementing the IRCCM using a cross-section detector of the medium wavelength band, there is a problem that the application of IRCCM using the flare wavelength characteristics is difficult.
The present invention was devised to solve the above-mentioned problems, and the infrared light of the short wavelength band, which is the point heat source of Flare, which is used to avoid guided missiles and the medium wavelength band, which is the point heat source of the target airplane of the small anti-aircraft weapon. It is possible to detect at the same time, and also provides a cooling infrared detector and a method of manufacturing the same to make process stabilization and signal processing through miniaturization and simplification of guided coal by making a single wavelength detector and a medium wavelength detector into one package. It aims to do it.
In order to achieve the above object, a cooling infrared detector according to an embodiment of the present invention includes a metal housing forming a can shape; An epoxy housing surrounded by an inner side of the metal housing; A detection element installed on an inner bottom of the metal housing; And an infrared window covering the upper side of the metal housing.
Here, the detection element is a medium-wavelength detection element that is installed so that the bar (Bar) form a + shape; Bar-shaped gathered to form an x-shape, the short-wavelength detection element installed to be crossed with the medium-wavelength detection element; An epoxy bridging the gap between the medium wavelength detection element and the short wavelength detection element; A medium wavelength electrode connected to the n-type of the medium wavelength detection element; And a short wavelength electrode connected to the n-type of the short wavelength detecting element.
In addition, the detection device may further include a bump for electrically connecting the medium wavelength detection element and the short wavelength detection element.
The bumps can also be implemented with indium of a sphere size of 20 μm.
The bumps can also be formed using an indium reflow process.
The short wavelength detection element is preferably designed to absorb all wavelengths in the 1.85 to 3.0 μm band.
In addition, the short wavelength detecting element and the medium wavelength detecting element preferably have a bar shape having a length of approximately 340 µm and a width of 60 µm.
In addition, the height of the short wavelength detection element is preferably formed in a bar shape of approximately 400 mu m.
In order to achieve the above object, a method for manufacturing an infrared detector includes a structure in which a medium wavelength detection element and a short wavelength detection element are formed in a staggered manner in which bar shapes are collected and form a positive shape, and the gap between the medium wavelength detection element and the short wavelength detection element is epoxy. Filling up with; And connecting the medium wavelength electrode to the n-type of the medium wavelength detection element, and connecting the short wavelength electrode to the n-type of the short wavelength detection element.
The method of manufacturing an infrared detector may further include forming a bump that electrically connects the medium wavelength detection element and the short wavelength detection element.
Here, the bumps may be formed using an indium reflow process.
According to an embodiment of the present invention, compared to the case of implementing IRCCM using two short and medium wavelength band detectors, one packaged detector can be used to improve performance and cost / performance. This is easy and the reliability of the product can be improved. In addition, the detector post-processing can be digitized to enhance the IRCCM using the detection of flare according to the wavelength and the kinematic characteristics of each.
In addition, compared to the case of implementing the IRCCM using a cross-section detector of the medium wavelength band, it can be utilized in the application of the IRCCM using the wavelength characteristics it is possible to implement the IRCCM enhancement by the signal processing.
1 is a diagram showing an example of two detectors for detecting conventional short wavelength and medium wavelength bands.
FIG. 2 is a view showing the element shape of each detector when the detector of FIG. 1 is viewed from the left side.
3 is a diagram illustrating an example of a conventional one bar type cross detector.
4 is a cross-sectional view of the element when the detector of FIG. 3 is viewed from the left side.
5 is a view schematically showing the structure of a bar-cooled infrared detector according to an embodiment of the present invention.
6 is a view schematically showing the structure of the detection element of FIG.
7 is a view showing another example of the cross shape of the medium wavelength detection element and the long wavelength detection element.
8 is a view showing infrared transmittance according to the epoxy peeling thickness.
9 illustrates an indium reflow process of bumps.
10 is a view showing the CUT-ON wavelength characteristics of the infrared window.
11 is a view showing an operation at the time of infrared ray incident of the HgCdTe detection element.
Hereinafter, a method of manufacturing a cooling infrared detector and an infrared detector according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
5 is a view schematically showing the structure of a bar-cooled infrared detector according to an embodiment of the present invention.
Referring to the drawings, the cooling type infrared detector is a can-
The
The ultra-low temperature (-183 ℃ or lower) cooling type two-color (SWIR-AC, MWIR-MC) infrared high sensitivity detector's MC (MWIR) detection cell is a semiconductor device with a band gap of 0.2 eV. Therefore, the noise generated by the thermally generated charge can be used as a detector to detect the charge caused by the photons. In order to reduce noise caused by heat generated charges, it should be cooled in a few seconds from the near 300K to cryogenic temperature (below -186 ℃). In addition, once cooled, it should have a characteristic that it is maintained for a certain time in a state where the supply of the refrigerant is stopped. In other words, PKG (Package) should be composed of a material having excellent thermal conductivity and latent heat at a specific temperature, that is, a large heat capacity. For this property, the
The
6 is a view schematically showing the structure of the detection element of FIG. As shown in FIG. 6, the
The medium
The epoxy 630 fills the gap between the medium
The
The
The
11 is a view showing an operation at the time of infrared ray incident of the HgCdTe detection element.
All objects with heat emit infrared light in the wavelength range of 0.75 µm to 1000 µm, according to Plank's law, and the emitted infrared rays decay greatly as they pass through the atmosphere. Therefore, the infrared detection element is used in the atmospheric window wavelength band of 3 ~ 5㎛ (MWIR) or 8 ~ 12㎛ (LWIR). HgCdTe, a detection device material, is an intrinsic detection device, has a high detection degree, and can control the energy band gap by changing the composition ratio of Hg and Cd, thereby adjusting the detection wavelength band. When an infrared ray having energy above the energy bend gap is incident on the detector element, a pair of electrons and holes are generated, and the electrons move to n-type and the hole to p-type according to the inclination (field) of the depletion layer. Therefore, when both ends are connected as shown in Fig. 11A, the short-circuit photocurrent according to the incident light intensity can be obtained. If both ends are opened as shown in Fig. 11 (b), since electrons accumulate in the P region and electrons accumulate in the n region in proportion to the amount of incident light, open voltage is generated at both ends. Such current-voltage characteristics are as shown in Fig. 11C.
According to the operation principle of the detection device, when the infrared rays of the short wavelength band and the medium wavelength band enter the
The above description is merely illustrative of the technical idea of the present invention, and those skilled in the art to which the present invention pertains may make various modifications and changes without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. In addition, the protection scope of the present invention should be interpreted by the claims, and all technical ideas within the equivalent scope will be construed as being included in the scope of the present invention.
510: metal housing 520: epoxy housing
530: detection element 540: infrared window
550: medium wavelength signal line 560: short wavelength signal line
Claims (11)
An epoxy housing surrounded by an inner side of the metal housing;
A detection element installed at an inner bottom surface of the metal housing; And
Infrared window covering the upper side of the metal housing
The detection device includes a medium wavelength detection device installed such that a bar shape is gathered to form a + shape; A short wavelength detection element having a bar shape gathered to form an x shape and staggered with the medium wavelength detection element; An epoxy filling in the gap between the medium wavelength detection element and the short wavelength detection element; A medium wavelength electrode connected to the n-type of the medium wavelength detection element; And a short wavelength electrode connected to the n-type of the short wavelength detection element.
Bump electrically connecting the medium wavelength detection element and the short wavelength detection element
Cooling infrared detector further comprises.
The bump is a cooled infrared detector, characterized in that implemented in indium size of 20 ㎛ size.
Cooling infrared detector, characterized in that the bump is formed using an indium reflow process.
The short wavelength detection element is a cooling infrared detector, characterized in that designed to absorb all wavelengths in the band 1.85 ~ 3.0 ㎛.
The short wavelength detecting element and the medium wavelength detecting element have a bar shape having a length of 340 µm and a width of 60 µm.
Cooling infrared detector, characterized in that the height of the short wavelength detection element is made of a bar shape of 400 ㎛.
Connecting the medium wavelength electrode to the n-type of the medium wavelength detection element, and connecting the short wavelength electrode to the n-type of the short wavelength detection element
Method of manufacturing an infrared detector comprising a.
Forming a bump electrically connecting the medium wavelength detection element and the short wavelength detection element;
Method of manufacturing an infrared detector, characterized in that it further comprises.
The bump is a method of manufacturing an infrared detector, characterized in that formed using an indium reflow process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100133751A KR101050735B1 (en) | 2010-12-23 | 2010-12-23 | Cooling type infrared detector and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100133751A KR101050735B1 (en) | 2010-12-23 | 2010-12-23 | Cooling type infrared detector and manufacturing method thereof |
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| KR101050735B1 true KR101050735B1 (en) | 2011-07-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020100133751A KR101050735B1 (en) | 2010-12-23 | 2010-12-23 | Cooling type infrared detector and manufacturing method thereof |
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| KR (1) | KR101050735B1 (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05149783A (en) * | 1990-12-03 | 1993-06-15 | Santa Barbara Res Center | Quick cooling/low-strain hybrid-focal-point planar- array platform used in dewar package of infrared- ray detector |
| JPH07183560A (en) * | 1993-12-22 | 1995-07-21 | Nippon Telegr & Teleph Corp <Ntt> | Optical detection element |
| JPH1030957A (en) | 1996-03-19 | 1998-02-03 | He Holdings Inc Dba Hughes Electron | Simultaneous bicolor detector for p+/n long-wavelength infrared ray and p+/n intermediate-wavelength infrared ray |
| US20060208189A1 (en) | 2005-03-16 | 2006-09-21 | Ulis | Bolometric detector, device for detecting infrared radiation using such a detector and method for producing this detector |
-
2010
- 2010-12-23 KR KR1020100133751A patent/KR101050735B1/en not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05149783A (en) * | 1990-12-03 | 1993-06-15 | Santa Barbara Res Center | Quick cooling/low-strain hybrid-focal-point planar- array platform used in dewar package of infrared- ray detector |
| JPH07183560A (en) * | 1993-12-22 | 1995-07-21 | Nippon Telegr & Teleph Corp <Ntt> | Optical detection element |
| JPH1030957A (en) | 1996-03-19 | 1998-02-03 | He Holdings Inc Dba Hughes Electron | Simultaneous bicolor detector for p+/n long-wavelength infrared ray and p+/n intermediate-wavelength infrared ray |
| US20060208189A1 (en) | 2005-03-16 | 2006-09-21 | Ulis | Bolometric detector, device for detecting infrared radiation using such a detector and method for producing this detector |
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