KR101037606B1 - Partition space pressure controll apparatus of film pretreatment apparatus - Google Patents

Partition space pressure controll apparatus of film pretreatment apparatus Download PDF

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KR101037606B1
KR101037606B1 KR1020080072327A KR20080072327A KR101037606B1 KR 101037606 B1 KR101037606 B1 KR 101037606B1 KR 1020080072327 A KR1020080072327 A KR 1020080072327A KR 20080072327 A KR20080072327 A KR 20080072327A KR 101037606 B1 KR101037606 B1 KR 101037606B1
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pretreatment
film
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KR20100011206A (en
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이상용
강택상
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주식회사 디알테크넷
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
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    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition

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Abstract

본 발명은 필름 전처리장치에 관한 것으로서, 보다 상세하게는 필름에 박막을 형성하기 전에 표면을 개질하기 위하여 공급되는 공정가스가 증착챔버로 유입되는 것을 방지할 수 있는 필름 전처리장치에 관한 것이다. The present invention relates to a film pretreatment apparatus, and more particularly, to a film pretreatment apparatus which can prevent the process gas supplied to modify the surface before the thin film is formed into the deposition chamber.

본 발명에 의한 필름에 박막을 형성하기 전에 표면을 개질하는 전처리장치에 있어서, 증착챔버에 이웃하여 설치되는 전처리챔버; 상기 전처리챔버 내부에 설치되는 플라즈마 발생부; 상기 플라즈마 발생부에 공정가스를 공급하는 가스공급부; 상기 전처리챔버 내부에서 상기 플라즈마 발생부가 위치하는 전처리영역을 차폐시키는 차폐막; 및 상기 전처리영역 또는 상기 전처리영역 이외의 비처리영역을 배기하는 펌핑수단;을 포함한다. A pretreatment apparatus for modifying a surface before forming a thin film on a film according to the present invention, comprising: a pretreatment chamber disposed adjacent to a deposition chamber; A plasma generator installed inside the pretreatment chamber; A gas supply unit supplying a process gas to the plasma generation unit; A shielding film for shielding a pretreatment region in which the plasma generation unit is located in the pretreatment chamber; And pumping means for evacuating the non-treatment area other than the pretreatment area or the pretreatment area.

필름. 전처리. 가스. film. Pretreatment. gas.

Description

필름 전처리장치의 분할공간 압력제어장치{PARTITION SPACE PRESSURE CONTROLL APPARATUS OF FILM PRETREATMENT APPARATUS}PARTITION SPACE PRESSURE CONTROLL APPARATUS OF FILM PRETREATMENT APPARATUS}

본 발명은 필름 전처리장치에 관한 것으로서, 보다 상세하게는 필름에 박막을 형성하기 전에 표면을 개질하기 위하여 공급되는 공정가스가 증착챔버로 유입되는 것을 방지할 수 있는 필름 전처리장치에 관한 것이다. The present invention relates to a film pretreatment apparatus, and more particularly, to a film pretreatment apparatus which can prevent the process gas supplied to modify the surface before the thin film is formed into the deposition chamber.

일반적으로 필름상에 박막을 형성하기 위하여는 롤투롤(Roll-to-Roll)방식을 이용한다. In general, a roll-to-roll method is used to form a thin film on a film.

도 1을 참조하여 종래 박막형성장치(1)를 설명하면, 언와인딩롤(11)이 장착되는 로딩챔버(10)와, 필름상에 이산화규소(SiO2) 박막을 형성하는 증착수단이 구비되는 제1증착챔버(30)와, ITO박막을 형성하는 증착수단이 구비되는 제2증착챔버(50)와, 상기 이산화규소박막 및 ITO박막이 순차적으로 형성된 필름을 와인딩하는 와인딩롤(71)이 장착되는 언로딩챔버(70)가 구비된다. Referring to FIG. 1, a conventional thin film forming apparatus 1 includes a loading chamber 10 in which an unwinding roll 11 is mounted, and deposition means for forming a silicon dioxide (SiO 2 ) thin film on a film. A first deposition chamber 30, a second deposition chamber 50 having a deposition means for forming an ITO thin film, and a winding roll 71 for winding a film in which the silicon dioxide thin film and the ITO thin film are sequentially formed are mounted. Unloading chamber 70 is provided.

상기 로딩챔버(10)에는 상기 언와인딩롤(11)을 시계, 반시계 방향으로 회전시키는 제1롤러(11a)가 구비된다. 또한 상기 로딩챔버(10)에는 상기 필름을 아웃가 스하기 위한 히터(13)가 구비된다. The loading chamber 10 is provided with a first roller 11a for rotating the unwinding roll 11 clockwise and counterclockwise. In addition, the loading chamber 10 is provided with a heater 13 for outgassing the film.

상기 로딩챔버(10)의 상부 리드에는 필름이 피딩되기 위한 개구부(12)가 형성되며, 상기 개구부(12)를 개폐하기 위한 제1게이트(G)가 구비된다. An opening 12 is formed in the upper lead of the loading chamber 10 to feed the film, and a first gate G for opening and closing the opening 12 is provided.

상기 개구부(12)를 통해 피딩되는 필름은 전처리장치(20)를 지나게 되는데, 상기 전처리장치(20)는 후술한다. The film fed through the opening 12 passes through the pretreatment device 20, which will be described later.

또한 상기 전처리장치(20)의 하부에는 필름상에 이산화규소(SiO2)박막을 형성하는 제1증착챔버(30)가 위치하는데, 제1증착챔버(30)의 상부 리드에는 개구부(33,34)가 형성된다. 또한 상기 제1증착챔버(30)에는 필름상에 이산화규소 박막을 형성하기 위한 제1스퍼터(32)와 제1드럼(31)이 구비된다. In addition, a first deposition chamber 30 that forms a silicon dioxide (SiO 2 ) thin film on the film is positioned below the pretreatment device 20, and openings 33 and 34 are formed in the upper leads of the first deposition chamber 30. ) Is formed. In addition, the first deposition chamber 30 is provided with a first sputter 32 and a first drum 31 for forming a silicon dioxide thin film on the film.

또한 상기 제1증착챔버(30)의 측면에는 이웃하여 제2증착챔버(50)가 위치하는데, 마찬가지로 제2증착챔버(50)의 상부 리드에는 개구부(53,54)가 형성된다. 또한 상기 제2증착챔버(50)에는 필름상에 ITO박막을 형성하기 위한 제2스퍼터(52)와 제2드럼(51)이 구비된다. In addition, the second deposition chamber 50 is positioned adjacent to the side of the first deposition chamber 30, and similarly, openings 53 and 54 are formed in the upper leads of the second deposition chamber 50. In addition, the second deposition chamber 50 is provided with a second sputter 52 and a second drum 51 for forming an ITO thin film on the film.

특히, 상기 제1증착챔버(30)와 제2증착챔버(50)의 사이 상부에는 투과율측정실(40)이 구비된다. 그 내부에는 투과율측정수단(41)이 구비되어 제1증착챔버(30)에서 이산화규소박막이 형성된 필름의 투과율을 측정한다. In particular, the transmittance measurement chamber 40 is provided at an upper portion between the first deposition chamber 30 and the second deposition chamber 50. The transmittance measuring means 41 is provided therein to measure the transmittance of the film on which the silicon dioxide thin film is formed in the first deposition chamber 30.

또한 제2증착챔버(50)의 상부에는 검사실(60)이 구비되는데, 상기 검사실(60)에는 필름의 저항을 측정하는 저항측정수단(61)과, 필름의 투과율을 측정하는 투과율측정수단(62)이 구비된다. In addition, the upper part of the second deposition chamber 50 is provided with a test chamber 60, the test chamber 60, the resistance measuring means 61 for measuring the resistance of the film, and the transmittance measuring means 62 for measuring the transmittance of the film ) Is provided.

또한 상기 언로딩챔버(70)에는 상기 와인딩롤(71)을 시계, 반시계 방향으로 회전시키는 제2롤러(71a)가 구비된다. 또한 상기 언로딩챔버(70)에는 상기 필름을 아웃가스하기 위한 히터(73)가 구비된다. In addition, the unloading chamber 70 is provided with a second roller 71a for rotating the winding roll 71 clockwise and counterclockwise. In addition, the unloading chamber 70 is provided with a heater 73 for outgassing the film.

또한 상기 언로딩챔버(70)의 상부 리드에도 역시 개구부(72)가 형성되며, 상기 개구부(72)는 제2게이트밸브(G)에 의해 개폐된다. In addition, an opening 72 is also formed in the upper lead of the unloading chamber 70, and the opening 72 is opened and closed by the second gate valve G.

도 2를 참조하면, 상기 전처리장치(20)는 형성될 박막의 접착력을 향상시키기 위하여 필름(F)의 표면을 개질하는 장치로서, 제1증착챔버(30)에 이웃하여 설치되는 전처리챔버(20)와, 상기 전처리챔버(20) 내부에 설치되는 플라즈마 발생부(21,22)와, 상기 플라즈마 발생부(21,22)에 공정가스를 공급하는 가스공급부(26)를 포함한다. 상기 공정가스는 산소(O2) 또는 아르곤(Ar), 질소(N2) 등을 사용한다. 또한 상기 플라즈마 발생부는 상부(magnet plate, 21)와, 하부(PT gun, 22)로 구성되어, 상기 상부와 하부 사이의 필름 하부 또는 상부에 발생하는데, 상기 상부전극과 하부전극 사이로 필름(F)을 피딩하기 위하여 상기 플라즈마 발생부(21,22)의 좌우에 한 쌍의 지지롤러(23,24)가 각각 설치된다. 또한, 전처리된 필름을 제1증착챔버(300에 피딩하기 위하여 전처리챔버(20)에도 제1증착챔버(30)의 개구부(33)와 연통되는 개구부(25)가 형성된다. Referring to FIG. 2, the pretreatment apparatus 20 is an apparatus for modifying the surface of the film F in order to improve adhesion of a thin film to be formed. The pretreatment chamber 20 is installed adjacent to the first deposition chamber 30. ), A plasma generator 21 and 22 installed inside the pretreatment chamber 20, and a gas supply unit 26 to supply process gas to the plasma generator 21 and 22. The process gas uses oxygen (O 2 ) or argon (Ar), nitrogen (N 2 ), or the like. In addition, the plasma generating unit is composed of an upper portion (magnet plate, 21), and a lower portion (PT gun, 22), and occurs in the lower or upper film between the upper and lower, the film (F) between the upper electrode and the lower electrode In order to feed a pair of support rollers (23, 24) are installed on the left and right of the plasma generating unit (21, 22), respectively. In addition, an opening 25 is formed in the pretreatment chamber 20 to communicate with the opening 33 of the first deposition chamber 30 in order to feed the pretreated film to the first deposition chamber 300.

위와 같이 구성된 종래의 필름상 박막형성장치는 전처리챔버(20)에 공급된 공정가스가 개구부(25,33)를 통해 제1증착챔버(30)로 유입되어 박막형성에 공정조건을 정확하게 제어하지 못하게 하는 문제점이 있다. 특히, 제1증착챔버(30)에서 이산화규소 박막을 형성하기 위하여 산소를 공급하는데, 이산화규소 박막의 소정 두께 및 균일도를 유지하기 위하여는 산소의 공급량을 엄격하게 제어해야 한다. 그러나 전처리챔버(20)의 공정가스인 산소가 개구부를 통해 제1증착챔버로 유입되어 산소공급량의 엄격한 제어를 어렵게 한다. In the conventional film-formed thin film forming apparatus configured as described above, the process gas supplied to the pretreatment chamber 20 is introduced into the first deposition chamber 30 through the openings 25 and 33 so as not to accurately control the process conditions in the thin film formation. There is a problem. In particular, oxygen is supplied to form the silicon dioxide thin film in the first deposition chamber 30. In order to maintain a predetermined thickness and uniformity of the silicon dioxide thin film, the oxygen supply amount must be strictly controlled. However, oxygen, which is a process gas of the pretreatment chamber 20, flows into the first deposition chamber through the opening, making it difficult to strictly control the oxygen supply amount.

본 발명은 상술한 문제점을 해결하기 위하여 안출된 것으로서, 본 발명의 목적은 필름에 박막을 형성하기 전에 표면을 개질하기 위하여 공급되는 공정가스가 증착챔버로 유입되는 것을 방지할 수 있는 필름 전처리장치을 제공함에 있다. The present invention has been made to solve the above-described problems, an object of the present invention to provide a film pretreatment apparatus that can prevent the process gas supplied to modify the surface before entering a thin film on the film to be introduced into the deposition chamber. Is in.

위와 같은 기술적 과제를 해결하기 위하여 본 발명에 의한 필름에 박막을 형성하기 전에 표면을 개질하는 전처리장치에 있어서, 증착챔버에 이웃하여 설치되는 전처리챔버; 상기 전처리챔버 내부에 설치되는 플라즈마 발생부; 상기 플라즈마 발생부에 공정가스를 공급하는 가스공급부; 상기 전처리챔버 내부에서 상기 플라즈마 발생부가 위치하는 전처리영역을 차폐시키는 차폐막; 및 상기 전처리영역 또는 상기 전처리영역 이외의 비처리영역을 배기하는 펌핑수단;을 포함한다. In order to solve the above technical problem, a pretreatment apparatus for modifying a surface before forming a thin film in the film according to the present invention, the pretreatment chamber is installed adjacent to the deposition chamber; A plasma generator installed inside the pretreatment chamber; A gas supply unit supplying a process gas to the plasma generation unit; A shielding film for shielding a pretreatment region in which the plasma generation unit is located in the pretreatment chamber; And pumping means for evacuating the non-treatment area other than the pretreatment area or the pretreatment area.

또한 상기 공정가스는 산소(O2)를 포함하고, 상기 증착챔버는 상기 필름상에 이산화규소(SiO2) 박막 또는 ITO박막을 형성한다. In addition, the process gas includes oxygen (O 2 ), and the deposition chamber forms a silicon dioxide (SiO 2 ) thin film or an ITO thin film on the film.

또한 상기 차폐막은 상기 플라즈마 발생부의 좌우에 각각 설치되는 것이 바 람직하다. In addition, the shielding film is preferably provided on each of the left and right sides of the plasma generating unit.

또한 피딩되는 상기 필름을 지지하는 지지롤러가 상기 플라즈마 발생부의 좌우에 각각 설치되는 것이 바람직하다. In addition, it is preferable that support rollers for supporting the film to be fed are respectively installed on the left and right sides of the plasma generating unit.

또한 상기 차폐막은 상기 한 쌍의 지지롤러가 구비되는 위치에 각각 수직 또는 수평 또는 경사지게(대각선) 설치되는 것이 바람직하다. In addition, the shielding film is preferably installed vertically, horizontally or inclined (diagonal) at the position where the pair of support rollers are provided.

또한 상기 한 쌍의 차폐막에 의해 형성된 전처리영역과, 한 쌍의 비처리영역에는 배기관이 연결되는 것이 바람직하다. In addition, the exhaust pipe is preferably connected to the pretreatment area formed by the pair of shielding films and the pair of unprocessed areas.

또한 상기 펌핑수단은, 상기 전처리영역을 배기하는 제1펌핑수단과, 상기 비처리영역을 배기하는 제2펌핑수단을 포함하는 것이 바람직하다. The pumping means may preferably include first pumping means for exhausting the pretreatment region and second pumping means for exhausting the non-treatment region.

본 발명에 따르면, 필름에 박막을 형성하기 전에 표면을 개질하기 위하여 공급되는 공정가스가 증착챔버로 유입되는 것을 방지할 수 있는 효과가 있다. According to the present invention, there is an effect that can prevent the process gas supplied to modify the surface before flowing into the deposition chamber to form a thin film on the film.

이하, 첨부된 도면을 참조하여 본 발명에 의한 필름 전처리장치의 구성 및 작동을 설명한다. Hereinafter, with reference to the accompanying drawings will be described the configuration and operation of the film pretreatment apparatus according to the present invention.

도 3을 참조하면, 본 발명에 의한 일 실시예(100)는 증착챔버(30)에 이웃하여 설치되는 전처리챔버(110)와, 상기 전처리챔버(110) 내부에 설치되는 플라즈마 발생부(111,112)와, 플라즈마 발생부(111,112)에 공정가스를 공급하는 가스공급부(116)가 구비되고, 피딩되는 필름(F)을 지지하는 지지롤러(113,114)가 상기 플라즈마 발생부(111,112) 좌우에 각각 설치된다. Referring to FIG. 3, an embodiment 100 according to the present invention includes a pretreatment chamber 110 installed adjacent to a deposition chamber 30 and a plasma generator 111 and 112 installed inside the pretreatment chamber 110. And a gas supply unit 116 for supplying a process gas to the plasma generators 111 and 112, and support rollers 113 and 114 for supporting the film F to be fed are provided on the left and right sides of the plasma generators 111 and 112, respectively. .

특히, 본 실시예(100)는 전처리챔버(110)는 상기 한 쌍의 지지롤러(113,114)가 구비되는 위치에 각각 수직으로 설치되는 차폐막(S1,S2)을 더 구비한다. 즉, 차폐막(S1,S2)은 플레이트 형상이지만, 지지롤러(113,114)와 필름(F)이 피딩되도록 개구부(미도시)가 형성되는 형태이다. 이러한 한 쌍의 차폐막(S1,S2)의 설치로 인해 전처리챔버(110)는 플라즈마 발생부(111,112)가 위치하는 전처리영역(L1)과, 상기 전처리영역(L1)의 좌우에 위치하는 비처리영역(L2,L3)으로 구획된다. 상기 차폐막은 수직이 아니라 수평방향 또는 대각선 방향 등 경사지게 설치될 수도 있다. In particular, the present embodiment 100 further comprises a shielding film (S1, S2) is installed vertically at the position where the pair of supporting rollers (113, 114) are provided, respectively. That is, although the shielding films S1 and S2 have a plate shape, openings (not shown) are formed so that the support rollers 113 and 114 and the film F are fed. Due to the pair of shielding films S1 and S2 installed, the pretreatment chamber 110 includes a pretreatment region L1 in which the plasma generators 111 and 112 are located, and an unprocessed region positioned to the left and right of the pretreatment region L1. It is divided into (L2, L3). The shielding film may be installed to be inclined horizontally or diagonally instead of vertically.

이와 같이 차폐막(S1,S2)으로 전처리영역(L1)과 비처리영역(L2,L3)을 구획하는 것은 플라즈마를 발생시키기 위해 공급되는 산소 등의 공정가스가 비처리영역(L2,L3), 특히, 증착챔버(30)와 연통되는 개구부(115)를 포함하는 비처리영역(L3)에 유입되는 것을 최소화하기 위한 것이다. 즉, 증착챔버(30)에 가까운 비처리영역(L3)에 공정가스의 유입을 막는 것이다. 따라서 차폐막(S1,S2)의 개구부는 그 면적이 작으면 작을수록 유리하다. In this way, partitioning of the pretreatment area L1 and the non-treatment areas L2 and L3 into the shielding films S1 and S2 is performed by the process gas such as oxygen supplied to generate the plasma. In order to minimize the inflow into the non-processing region L3 including the opening 115 communicating with the deposition chamber 30. That is, the inflow of process gas into the non-processing region L3 close to the deposition chamber 30 is prevented. Therefore, the smaller the openings of the shielding films S1 and S2 are, the more advantageous they are.

한편, 차폐막(S1,S2)은 반드시 지지롤러(113,114)가 구비되는 위치에 설치할 필요는 없다. 다만, 지지롤러(113,114)로부터 멀수록 필름(F)이 하방으로 처짐현상이 발생되므로, 처짐량을 감안하여 차폐막(S1,S2)의 개구부를 형성해야 한다. 다시 말하면, 지지롤러(113,114)가 구비되는 위치에 설치되는 경우보다 개구부의 면적을 더 크게 형성해야 한다. 결론적으로 차폐막(S1,S2)을 지지롤러(113,114)가 구비되는 위치에 설치하는 것이 유리하다. On the other hand, the shielding film (S1, S2) does not necessarily need to be installed at the position where the support rollers (113, 114) are provided. However, since the film F is deflected downward from the support rollers 113 and 114, the openings of the shielding films S1 and S2 should be formed in consideration of the deflection amount. In other words, the area of the opening should be made larger than that in the case where the support rollers 113 and 114 are provided. In conclusion, it is advantageous to install the shielding films S1 and S2 at the positions where the support rollers 113 and 114 are provided.

또한, 본 실시예(100)는 상기 전처리영역(L1) 및 비처리영역(L2,L3)에 각각 연결되는 배기관(117a,117b,117c)과, 상기 배기관(117a,117b,117c)을 통해 전처리영역(L1) 및 비처리영역(L2,L3)을 배기하는 펌핑수단(119)이 구비된다. 또한 각 영역의 배기를 제어하기 위한 스로틀밸브(118a)와 메인벨브(118b)가 구비된다. In addition, the present embodiment 100 is a pretreatment through the exhaust pipe (117a, 117b, 117c) connected to the pretreatment area (L1) and the non-processing area (L2, L3), respectively, and the exhaust pipe (117a, 117b, 117c) Pumping means 119 for exhausting the area L1 and the untreated areas L2 and L3 is provided. In addition, a throttle valve 118a and a main valve 118b for controlling the exhaust of each region are provided.

이하, 이와 같이 구성된 본 실시예(100)의 작동상태를 설명한다. Hereinafter, the operating state of the present embodiment 100 configured as described above will be described.

언와인딩롤로부터 전처리챔버(110)로 피딩되는 필름(F)은 한 쌍의 지지롤러(113,114)를 따라 지지되면서 플라즈마 발생부(111,112)에서 발생된 플라즈마로 표면이 전처리되어 증착챔버(30)로 공급된다. The film F, which is fed from the unwinding roll to the pretreatment chamber 110, is supported along a pair of support rollers 113 and 114, and the surface of the film F is pretreated with plasma generated from the plasma generators 111 and 112 to the deposition chamber 30. Supplied.

이 때, 플라즈마 발생부(111,112)에서 플라즈마를 생성하기 위하여는 산소나 아르곤 등의 공정가스를 공급해야 하는데, 가스공급부(116)로부터 공급된 공정가스는 차폐막(S1,S2)이 형성되어 비처리영역(L3)으로 유입되는 것이 방해된다. 따라서 공정가스의 농도는 전처리영역(L1)보다 비처리영역(L2,L3)에서 더 낮다. In this case, in order to generate plasma in the plasma generating units 111 and 112, process gases such as oxygen or argon should be supplied. The process gases supplied from the gas supply unit 116 are shielded films S1 and S2 and are not treated. Entry into the area L3 is impeded. Therefore, the concentration of the process gas is lower in the non-treatment zones L2 and L3 than in the pretreatment zone L1.

또한, 필름(F)을 전처리하면서 이와 동시에 배기관(117a,117b,117c)과 펌핑수단(119)을 통해 각 영역(L1,L2,L3)을 배기한다. 특히, 증착챔버(30)에 근접한 비처리영역(L3)에 유입된 산소 등의 공정가스는 배기관(117c)을 통해 배기되기 때문에 증착챔버(30)로 유입되지 않는다. In addition, while pre-processing the film F, the respective areas L1, L2, L3 are exhausted through the exhaust pipes 117a, 117b, 117c and the pumping means 119. In particular, process gas such as oxygen introduced into the non-processing region L3 adjacent to the deposition chamber 30 is not exhausted into the deposition chamber 30 because it is exhausted through the exhaust pipe 117c.

도 4를 참조하여 본 발명에 의한 다른 실시예(200)를 설명한다. 본 실시예는 증착챔버(30)에 이웃하여 설치되는 전처리챔버(210)와, 상기 전처리챔버(210) 내부에 설치되는 플라즈마 발생부(211,212)와, 플라즈마 발생부(211,212)에 공정가스를 공급하는 가스공급부(216)가 구비되고, 피딩되는 필름(F)을 지지하는 지지롤러(213,214)가 상기 플라즈마 발생부(211,212) 좌우에 각각 설치되며, 한 쌍의 지 지롤러(213,214)가 구비되는 위치에 각각 수직으로 설치되는 차폐막(S1,S2)을 더 구비한다. 또한 상기 차폐막(S1,S2)에 의해 형성된 전처리영역(L1)과 비처리영역(L2,L3)에 연결되는 배기관(217a,217b,217c)이 각각 형성된다. 이와 같은 구성은 도 3에 도시된 실시예와 동일하다. Another embodiment 200 according to the present invention will be described with reference to FIG. 4. The present embodiment supplies a process gas to the pretreatment chamber 210 installed adjacent to the deposition chamber 30, the plasma generation units 211 and 212 and the plasma generation units 211 and 212 installed inside the pretreatment chamber 210. The gas supply unit 216 is provided, and support rollers 213 and 214 for supporting the film F to be fed are installed on the left and right sides of the plasma generating units 211 and 212, respectively, and a pair of support rollers 213 and 214 are provided. It is further provided with shielding films S1 and S2 which are respectively installed at positions perpendicular to each other. In addition, exhaust pipes 217a, 217b, and 217c connected to the pretreatment area L1 and the non-treatment areas L2 and L3 formed by the shielding films S1 and S2 are formed, respectively. This configuration is the same as the embodiment shown in FIG.

다만, 본 실시예(200)는 전처리영역(L1)을 배기하는 제1펌핑수단(219a)과, 비처리영역(L2,L3)을 배기하는 제2펌핑수단(219b)이 구비된다는 차이점이 있다. However, the present embodiment 200 has a difference in that the first pumping means 219a for exhausting the pretreatment region L1 and the second pumping means 219b for exhausting the non-treatment regions L2 and L3 are provided. .

도 1은 종래 필름상 박막형성장치를 나타내는 개략도이다. 1 is a schematic view showing a conventional film-form thin film forming apparatus.

도 2는 박막 형성 전 필름을 표면개질하는 종래의 전처리장치를 나타낸 것이다. Figure 2 shows a conventional pretreatment apparatus for surface modification of the film before forming a thin film.

도 3 및 도 4는 본 발명에 의한 전처리장치의 각 실시예를 나타내는 개략도이다. 3 and 4 are schematic views showing each embodiment of the pretreatment apparatus according to the present invention.

Claims (8)

필름에 박막을 형성하기 전에 표면을 개질하는 전처리장치에 있어서, In the pretreatment apparatus for modifying the surface before forming a thin film on the film, 증착챔버에 이웃하여 설치되는 전처리챔버;A pretreatment chamber installed adjacent to the deposition chamber; 상기 전처리챔버 내부에 설치되는 플라즈마 발생부;A plasma generator installed inside the pretreatment chamber; 상기 플라즈마 발생부에 공정가스를 공급하는 가스공급부;A gas supply unit supplying a process gas to the plasma generation unit; 상기 플라즈마 발생부의 좌우에 각각 설치되어 상기 필름을 지지하는 지지롤러;Support rollers installed on left and right sides of the plasma generation unit to support the film; 상기 플라즈마 발생부의 좌우에 각각 구비되며, 상기 전처리챔버의 상면에서 바닥면까지 수직으로 설치되어 상기 플라즈마 발생부가 위치하는 전처리영역을 차폐시키는 차폐막; 및 Shielding films provided on left and right sides of the plasma generation unit, respectively, installed vertically from an upper surface of the pretreatment chamber to a bottom surface to shield the pretreatment region in which the plasma generation unit is located; And 상기 전처리영역 또는 상기 전처리영역 이외의 비처리영역을 배기하는 펌핑수단;을 포함하며,And pumping means for exhausting the non-treatment area other than the pre-treatment area or the pre-treatment area. 상기 지지롤러는 상기 차폐막을 관통하여 설치되는 것을 특징으로 하는 필름 전처리장치. The support roller is a film pretreatment, characterized in that installed through the shielding film. 삭제delete 삭제delete 삭제delete 삭제delete 삭제delete 삭제delete 제1항에 있어서,The method of claim 1, 상기 펌핑수단은, The pumping means, 상기 전처리영역을 배기하는 제1펌핑수단과, First pumping means for exhausting the pretreatment region; 상기 비처리영역을 배기하는 제2펌핑수단을 포함하는 것을 특징으로 하는 필름 전처리장치. And a second pumping means for exhausting the untreated area.
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JPH02111880A (en) * 1988-10-19 1990-04-24 Mitsubishi Heavy Ind Ltd Continuously vapor depositing device for film
JPH05287498A (en) * 1992-04-16 1993-11-02 Nkk Corp Pretreatment of band plate for vapor deposition treatment and device therefor
JPH0822956A (en) * 1994-07-05 1996-01-23 Casio Comput Co Ltd Forming method of transparent conductive film and its manufacture
JP2007119911A (en) * 2005-09-27 2007-05-17 Semiconductor Energy Lab Co Ltd Film deposition apparatus, film deposition method, and photoelectric converter manufacturing method

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Publication number Priority date Publication date Assignee Title
JPH02111880A (en) * 1988-10-19 1990-04-24 Mitsubishi Heavy Ind Ltd Continuously vapor depositing device for film
JPH05287498A (en) * 1992-04-16 1993-11-02 Nkk Corp Pretreatment of band plate for vapor deposition treatment and device therefor
JPH0822956A (en) * 1994-07-05 1996-01-23 Casio Comput Co Ltd Forming method of transparent conductive film and its manufacture
JP2007119911A (en) * 2005-09-27 2007-05-17 Semiconductor Energy Lab Co Ltd Film deposition apparatus, film deposition method, and photoelectric converter manufacturing method

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