KR101030947B1 - Converter circuit for switching a number of switching voltage levels - Google Patents

Abstract

The nth first switching group 1.n is formed by the first driveable bidirectional power semiconductor switch 2 and the second driveable bidirectional power semiconductor switch 3, and the first first switching groups 1.1 to (1). Each of the n−1) th first switching groups 1. (n−1) may include a first driveable bidirectional power semiconductor switch 2, a second driveable bidirectional power semiconductor switch 3, and the first and the same. N first switching groups (1.1, ...) for each phase (R, S, T) formed by a capacitor (4) connected to a second driveable bidirectional power semiconductor switch (2, 3). , 1.n), and each of the n first switching groups (1.1, ..., 1.n) is linked to each adjacent first switching group (1.1, ..., 1.n) Connected in an interconnected form, wherein the first and second driveable bidirectional power semiconductor switches 2, 3 of the first first switching group 1.1 are connected to each other. It is provided for the switching of the switching voltage level of the can. In order to reduce the energy stored in the converter circuit, n ≧ 1, the first driveable bidirectional power semiconductor switch 7, 8, the second driveable bidirectional power semiconductor switch 9, 10 and the capacitor 13, 14 are replaced. P second switching groups (5.1, ..., 5. p) and p third switching groups (6.1, ..., 6. p) each having are disclosed, where p > Each of the p second switching groups (5.1, ..., 5.p) is connected in a form linked to each adjacent second switching group (5.1, ..., 5.p), and each of Each of the p third switching groups (6.1, ..., 6.p) is connected in a form linked to each adjacent third switching group (6.1, ..., 6.p). In addition, each of the first second and first third switching groups 5.1 and 6.1 is connected to the second driveable bidirectional power semiconductor switch 9 and 10 in series with the third driveable bidirectional power semiconductor switch 11. 12, the first second switching group 5.1 is connected to the first actuable bidirectional power semiconductor switch 2 of the nth first switching group 1.n, and the first third switching group 6.1 is connected to the second driveable bidirectional power semiconductor switch 3 of the n-th first switching group 1.n, the capacitor 13 of the p-th second switching group 5.p is the p-th third switching group It is connected in series with the capacitor 14 of 6.p.

Converter Circuit, Driven Bidirectional Power Semiconductor Switch

Description

CONVERTER CIRCUIT FOR SWITCHING A NUMBER OF SWITCHING VOLTAGE LEVELS}

Technical Field

FIELD OF THE INVENTION The present invention relates to the field of power electronics, and more particularly to a converter circuit for switching of multiple switching voltage levels as claimed in the preamble of the independent claim.

Prior art

Today, a wide range of converter circuits are used for power electronics applications. In this case, the requirement for such a converter circuit is, on the one hand, to generate as few harmonics as possible in the phase of the electrical AC power system normally connected to that converter circuit, while on the other hand, as few as possible. The highest possible power level is sent to the electronic component. One suitable converter circuit for switching of multiple switching power levels is described in DE 692 05 413 T2. In this document, the nth first switching group is formed by the first power semiconductor switch and the second power semiconductor switch, and each of the first to the (n-1) th first switching groups is the first power semiconductor. N first switching groups, formed by a switch and a second power semiconductor switch and capacitors connected to the first and second power semiconductor switches, are provided for each phase, where n ≧ 2. Each of the n first switching groups is connected in parallel to each adjacent first switching group, and the first and second power semiconductor switches of the first first switching group are connected to each other. Each of the first and second power semiconductor switches has an Insulated Gate Bipolar Transistor (IGBT) having drive electrodes arranged in an insulated form, and a diode back-to-back connected in parallel with the bipolar transistor. Is formed by.

One problem with the converter circuit for switching of multiple switching voltage levels according to DE 692 05 413 T2 is that the electrical energy stored in the converter circuit during operation is very high. Since the electrical energy is stored in capacitors in the n first switching groups of the converter circuit, the capacitors must be designed for this electrical energy, ie in terms of their withstand voltage and / or their capacitance. However, this results in physically large capacitors corresponding to high cost. In addition, since the converter circuit requires a large amount of space because the capacitor has a large physical size, a space-saving design as required for many applications, for example traction applications, is not possible. In addition, the use of capacitors with large physical sizes results in high assembly and maintenance costs.

DESCRIPTION OF THE INVENTION

It is therefore an object of the present invention to specify a converter circuit for switching of multiple switching voltage levels, which stores as little electrical energy as possible during its operation and can be manufactured in a space-saving manner. This object is achieved by the features of claim 1. Preferred developments of the invention are specified in the dependent claims.

In the converter circuit according to the invention for the switching of a plurality of switching voltage levels, the nth first switching group is formed by a first driveable bidirectional power semiconductor switch and a second driveable bidirectional power semiconductor switch, and the first first switching. A group to the (n-1) th first switching group by capacitors connected to the first drive bidirectional power semiconductor switch, the second drive bidirectional power semiconductor switch, and the first and second drive bidirectional power semiconductor switches; Formed with each of the n first switching groups provided for each phase, and when there are a plurality of first switching groups, each of the n first switching groups is in a form linked to each adjacent first switching group And the first and second activatable bidirectional power semiconductor switches in the first first switching group are connected to each other.

According to the invention, n ≧ 1, p second switching groups and p third switching groups are provided, each of the groups being a first drive bidirectional power semiconductor switch, a second drive bidirectional power semiconductor and a capacitor Where p ≧ 1. When there are a plurality of second switching groups, each of the second switching groups is each connected in a form linked to an adjacent third switching group. Further, each of the first second and first third switching groups has a third driveable bidirectional power semiconductor switch connected back in series with each of the second driveable bidirectional power semiconductor switches, the first second switching group being the nth third. Connected to the first actuable bidirectional power semiconductor switch of the first switching group, the first third switching group of the first actuating bidirectional power semiconductor switch of the n-th first switching group. Also, the capacitor of the p-th second switching group is connected in series with the capacitor of the p-th third switching group.

The p second switching groups and the p third switching groups provided, as well as the connections of the capacitor as described above, are for example positive during the operation of the converter circuit according to the invention, for example, the p second switching groups are positive. This means that only half-cycle is related to the phase output AC voltage, and the p third switching groups are related to the phase output AC voltage only during the negative half-cycle. This can preferably reduce the amount of electrical energy stored in the converter circuit, in particular in the capacitors of the p second and third switching groups. Also, since the n first switching groups are used only for balancing the phase output AC voltage, when there are a plurality of first switching groups, the capacitors of the n first switching groups essentially carry no current in a balanced state. And therefore also essentially does not store any electrical energy. This makes it possible to keep the total amount of electrical energy stored in the converter circuit low, so that the capacitors of the converter circuit need only be designed for the storage of a small amount of electrical energy, ie in terms of withstand voltage and / or their capacitance. . As a result of the small physical size of the capacitor, the converter circuit requires very little space and is therefore desirable to enable a space-saving design, as required for many applications, for example traction applications. . In addition, the small physical size of the capacitor is also desirable to enable keeping assembly and maintenance costs low.

These and further objects, advantages and features of the present invention will become apparent from the following detailed description of the preferred and exemplary embodiments of the invention, taken in conjunction with the drawings.

Brief description of the drawings

1 shows a first embodiment of a converter circuit according to the invention.

2 shows a second embodiment of a converter circuit according to the invention.

3 shows a third embodiment of a converter circuit according to the invention.

The reference signs used in the figures and their meanings are listed in summary form in the list of reference signs. In principle, like parts are given like reference numerals in the drawings. The described embodiments are merely illustrative of the subject matter of the present invention and not limited thereto.

Access to the implementation of the invention

1 shows one embodiment, in particular a single-phase embodiment, of a converter circuit according to the invention for the switching of multiple switching voltage levels. In this case, the converter circuit is such that the nth first switching group 1.n is formed by the first driveable bidirectional power semiconductor switch 2 and the second driveable bidirectional power semiconductor switch 3, and the first first. Each of the switching groups (1.1) to (n-1) th first switching groups (1. (n-1)) includes a first driveable bidirectional power semiconductor switch 2 and a second driveable bidirectional power semiconductor switch 3 ) And a capacitor 4 connected to the first and second driveable bidirectional power semiconductor switches 2, 3, in which case according to the invention n ≧ 1 and n first switching Each of the groups (1.1, ..., 1.n) is each phase (R, Y, B) connected in a form linked to each adjacent first switching group (1.1, ..., 1.n). N has n first switching groups (1.1, ..., 1.n). As can be seen from FIG. 1, in the first first switching group 1.1 the first and second activatable bidirectional power semiconductor switches 2, 3 are connected to each other. The junction points of the first and second power semiconductor switches 2, 3 in the first first switching group 1.1 form a phase connection, in particular with respect to the phase R, as shown in FIG. 1.

Next, according to the present invention, p second switching groups (5.1, ..., 5.p) and p third switching groups (6.1, ..., 6p) are provided, and each And a first driveable bidirectional power semiconductor switch 7, 8, a second driveable bidirectional power semiconductor switch 9, 10 and a capacitor 13, 14, where p ≧ 1. As shown in FIG. 1, each of the p second switching groups (5.1, ..., 5p) and each of the p third switching groups (6.1, ..., 6p) are each a 4-pole ( four-pole) network, each of the p second switching groups (5.1, ..., 5. p) is based on its four-pole network theory. , 5.p). Further, each of the p third switching groups (6.1, ..., 6.p) is linked to each adjacent third switching group (6.1, ..., 6.p) based on the four-pole network theory. Is connected in the form. Further, each of the first second and first third switching groups 5.1, 6.1 is a third driveable bidirectional power semiconductor switch 11 back connected in series with a respective second driveable bidirectional power semiconductor switch 9, 10. 12, the first second switching group 5.1 is connected to the first actuable bidirectional power semiconductor switch 2 of the nth first switching group 1.n, and the first third switching group 6.1. Is connected to the second actuable bidirectional power semiconductor switch 3 of the nth first switching group 1.n. Finally, the capacitor 13 of the p-th second switching group 5.p is connected in series with the capacitor 14 of the p-th third switching group 6.p. For example, by means of the provided p second switching groups (5.1, ..., 5. p) and p third switching groups (6.1, ..., 6. p), the converter according to the invention During operation of the circuit, the p second switching groups (5.1, ..., 5.p) are related to the phase output AC voltage only during the positive half cycle, and the p third switching groups (6.1, ... .6.p) relates to the phase output AC voltage only during the negative half-cycle, and the connections to each other, the connections between each other and the connections for the n th first switching group 1.n are represented. It is preferably stored in the converter circuit, in particular in the capacitors 13, 14 of the p second and third switching groups 5.1,..., 5.p; 6.1,..., 6.p. Can reduce electrical energy. Also, the n first switching groups 1.1,... 1.n are used only for balancing the phase output AC voltage, so that when the phase output AC voltage is in a balanced state, the n first switching groups Capacitor 4 of (1.1,... 1.n) does not carry current inherently, and therefore does not inherently store electrical energy. This makes it possible to keep the total amount of electrical energy stored in the converter circuit according to the invention low, so that the capacitors 4, 13, 14 of the converter circuit are only for storing a small amount of electrical energy, ie withstand voltage and / or Or they need to be designed in terms of their capacitance. As a result of the small physical size of the capacitors 4, 13, 14, the converter circuit preferably requires a minimum amount of space, and thus is space-saving, as required for many applications, for example traction applications. Allow the design. In addition, the small physical size of the capacitors 4, 13, 14 preferably makes it possible to keep the assembly and maintenance costs low.

The back series connection of the second and third driveable bidirectional power semiconductor switches 9, 10, 11, 12 are such that the second and third driveable bidirectional power semiconductor switches 9, 10, 11, 12 are each other. It will be appreciated that it should be understood to mean that it has a controlled main current flow direction in the opposite direction.

As shown in FIG. 1, the nth first switching group 1.n is connected to the first and second driveable bidirectional power semiconductor switches 2 and 3 of the nth first switching group 1.n. The first second switching group 5.1 is connected to the capacitor 4 of the nth first switching group 1.n, and the first third switching group 6.1 is the nth first It is connected to the capacitor 4 of the switching group 1.n. The capacitor 4 of the n-th first switching group 1.n is preferably such that the phase output voltage can be stabilized, in particular when the desired phase output voltage is 0V, thus without any problem, i.e. It can be achieved without the interference effect. The capacitor 4 of the nth first switching group 1.n is used only for voltage limiting and / or voltage stabilization and is therefore not considered as a voltage source.

As shown in FIG. 1, the first and second activatable bidirectional power semiconductor switches 7, 9 of the first second switching group 5.1 are connected to each other and the first of the first second switching group 5.1. And the junction point of the second driveable bidirectional power semiconductor switch 7, 9 is a capacitor 4 of the nth first switching group 1.n and a first of the nth first switching group 1.n. It is connected to a junction point with the driveable bidirectional power semiconductor switch 2. Further, the first and third driveable bidirectional power semiconductor switches 8, 12 of the first third switching group 6.1 are connected to each other, and the first and third driveable bidirectional of the first third switching group 6.1. The junction point of the power semiconductor switch 8, 12 is a second driveable bidirectional power semiconductor switch of the nth first switching group 1.n and the capacitor 4 of the nth first switching group 1.n. It is connected to the junction point with (3).

As shown in FIG. 1, for the first second switching group 5.1, the first and third activatable bidirectional power semiconductor switches 7, 11 are connected to the capacitor 13 of the first second switching group 5.1. Connected. In addition, in the case of the first third switching group 6.1, the first and second driveable bidirectional power semiconductor switches 8, 10 are connected to the capacitor 14 of the first third switching group 6.1. Further, in the case of the second second switching group to the p-th second switching group (5.2, ..., 5.p) and the second third switching group to the p-th third switching group (6.2, ..., 6) In the case of .p), the first and second activatable bidirectional power semiconductor switches 7, 9, 8, 10 each have an associated switching group (5.2, ..., 5.p; 6.2, ..., 6.p) to the capacitors 13 and 14.

The total number of n first switching groups (1.1, ..., 1.n) is divided into p second and third switching groups (5.1, ..., 5.p; 6.1, ..., 6 It is possible to correspond to the total number of .p). Thus, in general, (2n + 1) switching voltage levels can be preferably switched by the converter circuit according to the present invention.

Alternatively, the total number of n first switching groups (1.1, ..., 1.n) is determined by p second and third switching groups (5.1, ..., 5.p; 6.1,. It is also possible to make it less than the total number of. This preferably means that fewer first switching groups (1.1, ..., 1.n) and thus fewer first and second power semiconductor switches (2, 3) and fewer capacitors (4) This means that, as a whole, the space required for the converter circuit according to the invention can be further reduced.

Further, the total number of n first switching groups 1.1,..., 1. n is determined by p second and third switching groups 5. , 6.p).

In general, for the converter circuit according to the invention, n first switching groups (1.1, ..., 1.n) and p second and third switching groups (5.1, ..., 5. p; 6.1, ..., 6.p) Each of the first, second and third activatable bidirectional power semiconductor switches 2, 3, 7, 8, 9, 10, 11, 12 is, for example, A driveable power semiconductor component carrying current in one direction by an IGBT (ie, an Insulated Gate Bipolar Transistor) having drive electrodes arranged in an insulated form, and a back connection in parallel with the driveable power semiconductor component And, for example, by passive non-drivable power semiconductor components that carry current in one direction by a diode. As shown in Fig. 1, the first and second drive of each switching group (1.1, ..., 1.n; 5.1, ..., 5.p; 6.1, ..., 6.p) The possible bidirectional power semiconductor switches 2, 3, 7, 8, 9, 10 are characterized in that they have a controlled main current flow direction in the opposite direction, i.e. each of the driveable power semiconductor components in which current is carried in one direction. They are connected in such a way that they have a controlled main current flow direction in opposite directions. Further, as described above, in the case of the first second and first third switching groups (5.1, 6.1), the third driveable bidirectional power semiconductor switches 11, 12 are each second driveable bidirectional power semiconductor switches 9 10, in series back connection, i. E., As shown in FIG. 1, in the form of a diode in the second and third activatable bidirectional power semiconductor switches 9, 10, 11, 12 Passive non-powerable power semiconductor components are connected to each other at their anodes, and driveable power semiconductor components in the form of IGBTs are connected to each other by their emitters. However, passive non-driven power semiconductor components in the form of diodes in the second and third driveable bidirectional power semiconductor switches 9, 10, 11, 12 are connected to each other at their cathodes and are driven in the form of IGBTs. Each of the second driveable bidirectional power semiconductor switches 9, 10 is in series with the third driveable bidirectional power semiconductor switch 11, 12 in such a way that the possible power semiconductor components are connected to each other by their collectors. It is also possible to be connected. As shown in FIG. 3, this circuit is applied to the second and third activatable bidirectional power semiconductor switches 9, 11 of the first second switching group 5.1 in the third embodiment of the converter circuit according to the invention. Is shown and this third embodiment is described in detail in the following text. This circuit saves space for the second and third activatable bidirectional power semiconductor switches 9, 10, 11, 12 in each switching group 5.1, 6.1 in the first embodiment as shown in FIG. 1. Equivalent to exchanging, the operation method is the same as that of the back series circuit as described above of the second and third driveable bidirectional power semiconductor switches 9, 10, 11, 12.

Preferably, in the case of the n first switching groups 1.1,... 1. n, two first driving of each adjacent first switching groups 1.1... The possible bidirectional power semiconductor switches 2 are integrated in one module, that is, if there are a plurality of first switching groups 1.1,..., 1.n, the n-th first switching group 1. n) the first driveable bidirectional power semiconductor switch 2 of the (n-1) th first switching group 1. (n-1) and the first driveable bidirectional power semiconductor switch 2 of the (n-1) Integrated into the (n-1) th first switching group (1. (n-1)) of the first activatable bidirectional power semiconductor switch 2 and the (n-2) th first switching group 1. It has been found that the first driveable bidirectional power semiconductor switch 2 of n-2)) is integrated in one module. In addition, two second driveable bidirectional power semiconductor switches 3 of each adjacent first switching groups 1.1,..., 1.n are integrated into one module, that is, a plurality of firsts. If switching groups (1.1, ..., 1.n) are present, the second actuable bidirectional power semiconductor switch (3) and (n-1) th first of the nth first switching group (1.n) The second activatable bidirectional power semiconductor switch 3 of the first switching group 1. (n-1) is integrated into one module, and the (n-1) th first switching group 1. (N-1) Of the second driveable bidirectional power semiconductor switch (3) of the (n) and the second driveable bidirectional power semiconductor switch (3) of the (n-2) th first switching group (1. (n-2)) It has been found to be desirable to integrate. The modules described above are conventional standard half-bridge modules and are therefore simple in design, very reliable and available at low cost.

If there are a plurality of first switching groups 1.1, ..., 1.n, the first directional bidirectional power in each of the n first switching groups 1.1, ..., 1.n. It is also possible to integrate the semiconductor switch 2 and the second driveable bidirectional power semiconductor switch 3 into one module. As mentioned above, modules such as these are conventional standard half-bridge modules, and are therefore simple in design, very reliable and available at low cost.

Further, if there are a plurality of second switching groups 5.1, ..., 5.n in the p second switching groups 5.1, ..., 5. p, each adjacent second switching groups Two first actuable bidirectional power semiconductor switches 7 of (5.1, ..., 5.p) are in one module, i.e. n first switching groups (5.1, ..., 5.p) It has been found that it is desirable to integrate in the manner described above in detail. Further, when there are a plurality of third switching groups 6.1, ..., 6.p in the p third switching groups 6.1, ..., 6.p, each adjacent third switching Two first activatable bidirectional power semiconductor switches 8 of groups 6. 1,..., P are in one module, ie n first switching groups 1... n) in the manner described above in detail.

As an alternative thereto, the plurality of second and third switching groups 5. 1, in p second and third switching groups 5.1,..., 5. p; 6.1,. ..., 5.p; 6.1, ..., 6.p), the first driveable bidirectional power semiconductor switches 7, 8 and the second driveable bidirectional power semiconductor switches 9, 10) It is also possible to integrate each of these into one module. The modules described above are conventional standard modules and are therefore simple in design, very reliable and available at low cost.

In addition, the third driveable bidirectional power semiconductor switch 11 of the first second switching group 5.1 and the third driveable bidirectional power semiconductor switch 12 of the first third switching group 6.1 are integrated into one module. It is possible. Once again, these are standard modules with the corresponding advantages already described.

In the case of a converter circuit having a plurality of phases, which needs to be implemented according to the present invention, it is preferable that the p-th second switching groups 5.p of the phases R, Y, and B are connected in parallel with each other. And the p-th third switching groups 6.p of the phases R, Y and B are connected in parallel with each other. Respective connections are made in the capacitor 13 in each of the p-th second switching groups 5.p and in the capacitor 14 in each of the p-th third switching groups 6.p.

In order to be able to save space preferably in a converter circuit having a plurality of phases, the capacitors 13 of the p-th second switching groups 5.p of the phases R, Y, and B have one capacitor. It is preferable to combine to form. In addition, the capacitors 14 of the p-th third switching groups 6.p of the phases R, Y, and B are preferably similarly combined to form one capacitor.

FIG. 2 shows a second embodiment of the converter circuit according to the invention, in which, unlike the first embodiment shown in FIG. 1, the voltage limiting network 15 is capable of driving the third of the first second switching group 5. 1. It is different in that it is connected in parallel with the bidirectional power semiconductor switch 11 and the voltage limiting network 15 is connected in parallel with the third driveable bidirectional power semiconductor switch 12 of the first third switching group 6.1. The voltage limiting network 15 can be selectively selected and is preferably used for stabilization of the phase output voltage, in particular for the desired phase output voltage of 0V. The voltage limiting network 15 preferably has a capacitor or a series circuit of capacitors and resistors as shown in FIG.

As an alternative to the second embodiment shown in FIG. 2, FIG. 3 shows a third embodiment of a converter circuit according to the invention. 3 shows that the voltage limiting network 15 is the junction point of the second and third driveable power semiconductor switches 9, 11 of the first second switching group 5.1, and the first agent. It differs from the second embodiment shown in FIG. 2 in that it is connected to the junction point of the second and third driveable power semiconductor switches 10, 12 of the three switching group 6.1. The voltage limiting network 15 can optionally be selected and advantageously used for stabilization of the phase output voltage, in particular for the desired phase output voltage of 0V. The voltage limiting network 15 preferably has a capacitor, or a series circuit of capacitor and resistor, as shown in FIG.

Thus, in general, the switching circuits for switching of multiple switching voltage levels according to the invention are characterized by a small amount of stored electrical energy and space-saving design during their operation and are therefore not complicated, robust and very reliable. Indicates a solution that is a solution.

List of reference marks

1.1, ..., 1.n: first switching groups

2: first actuable bidirectional power semiconductor switch of the first switching groups

3: second actuable bidirectional power semiconductor switch of the first switching groups

4: capacitor of the first switching groups

5.1, ..., 5.p: second switching groups

6.1, ..., 6.p: third switching groups

7: first actuable bidirectional power semiconductor switch of second switching groups

8: first actuable bidirectional power semiconductor switch of third switching groups

9: second actuable bidirectional power semiconductor switch of second switching groups

10: second actuable bidirectional power semiconductor switch of third switching groups

11: third actuable bidirectional power semiconductor switch of second switching groups

12: third actuable bidirectional power semiconductor switch of third switching groups

13: capacitor of the second switching groups

14: capacitor of the third switching groups

15: voltage limiting network

Claims (20)

The nth first switching group 1.n is formed by the first driveable bidirectional power semiconductor switch 2 and the second driveable bidirectional power semiconductor switch 3, and the first first switching groups 1.1 to (1). The n-1) th first switching group 1. (n-1) comprises a first driveable bidirectional power semiconductor switch 2, a second driveable bidirectional power semiconductor switch 3, and the first and second switches. N first switching groups (1.1,... Provided for each phase (R, Y, B), each formed by a capacitor (4) connected to a driveable bidirectional power semiconductor switch (2, 3). ., 1.n) Each of the n first switching groups 1.1,... 1. n is connected in a form linked to each adjacent first switching group 1.1... The first and second driveable bidirectional power semiconductor switches 2, 3 in one switching group 1.1 are as converter circuits for switching of a plurality of switching voltage levels, which are connected to each other, p second switching groups each having n ≧ 1, each having a first driveable bidirectional power semiconductor switch 7, 8, a second driveable bidirectional power semiconductor switch 9, 10, and a capacitor 13, 14 ( 5.1, ..., 5.p) and p third switching groups (6.1, ..., 6.p) are provided, p≥1, and said p second switching groups (5.1,. .., 5.p) are each connected in a form linked to adjacent second switching groups (5.1, ..., 5.p), respectively, and the p third switching groups (6.1, ..., 6) .p) each connected in the form of a link to an adjacent third switching group (6.1, ..., 6.p), Each of the first second switching group and the first third switching group (5.1, 6.1) is a third drive back-to-back connected in series with the respective second driveable bidirectional power semiconductor switch (9, 10). Has a bidirectional power semiconductor switch 11, 12 capable of connecting the first second switching group 5.1 to the first actuable bidirectional power semiconductor switch 2 of the nth first switching group 1.n. The first third switching group 6.1 is connected to the second actuable bidirectional power semiconductor switch 3 of the nth first switching group 1.n, The capacitor 13 of the p-th second switching group 5.p is connected in series with the capacitor 14 of the p-th third switching group 6.p. Converter circuit for switching. The method of claim 1, The nth first switching group 1.n is a capacitor 4 connected to the first and second driveable bidirectional power semiconductor switches 2, 3 in the nth first switching group 1.n. Has, The first second switching group 5.1 is connected to the capacitor 4 of the nth first switching group 1.n, the first third switching group 6.1 being the nth first switching group ( 1. n) converter circuit for switching of a plurality of switching voltage levels, characterized in that it is connected to said capacitor (4). The method of claim 2, In the first second switching group (5.1), the first and second driveable bidirectional power semiconductor switches (7, 9) are connected to each other, and in the first second switching group (5.1), the first and second A junction point of a driveable bidirectional power semiconductor switch 7, 9 is the capacitor 4 of the nth first switching group 1.n and the first of the nth first switching group 1.n. Connected to a junction point with the driveable bidirectional power semiconductor switch 2, In the first third switching group 6.1, the first and third activatable bidirectional power semiconductor switches 8, 12 are connected to each other and in the first third switching group 6.1, the first and third A junction point of a driveable bidirectional power semiconductor switch 8, 12 is characterized in that the capacitor 4 of the n th first switching group 1.n and the second of the n th first switching group 1.n A converter circuit for switching a plurality of switching voltage levels, characterized in that it is connected to a junction point with a driveable bidirectional power semiconductor switch (3). 4. The method according to any one of claims 1 to 3, In the first second switching group (5.1), the first and third driveable bidirectional power semiconductor switches (7, 11) are connected to the capacitor (13) of the first second switching group (5.1), In the first third switching group (6.1), the first and second driveable bidirectional power semiconductor switches (8, 10) are connected to the capacitor (14) of the first third switching group (6.1). A converter circuit for switching a plurality of switching voltage levels. 4. The method according to any one of claims 1 to 3, In the second second switching group to the pth second switching group (5.2, ..., 5.p) and the second third switching group to the pth third switching group (6.2, ... 6.p), The first and second activatable bidirectional power semiconductor switches 7, 9, 8, 10 respectively represent capacitors of the associated switching group 5.2,..., 5.p; 6.2,... 13, 14, characterized in that the converter circuit for switching a plurality of switching voltage levels. 4. The method according to any one of claims 1 to 3, In the first second switching group 5.1 a voltage limiting network 15 is connected in parallel with the third driveable bidirectional power semiconductor switch 11, Converter circuit for switching a plurality of switching voltage levels, characterized in that a voltage limiting network (15) is connected in parallel with said third driveable bidirectional power semiconductor switch (12) in a first third switching group (6.1). 4. The method according to any one of claims 1 to 3, Junction points of the second and third driveable power semiconductor switches 9, 11 of the first second switching group 5.1, and the second and third driveable power of the first third switching group 6.1. A converter circuit for switching a plurality of switching voltage levels, characterized in that a voltage limiting network (15) is connected to the junction points of the semiconductor switches (10, 12). The method of claim 6, The voltage limiting network (15) is characterized in that it has a capacitor converter circuit for switching a plurality of switching voltage levels. The method of claim 6, Said voltage limiting network (15) having a series circuit of capacitors and resistors. 4. The method according to any one of claims 1 to 3, The total number of the n first switching groups (1.1, ..., 1.n) is equal to the p second and third switching groups (5.1, ..., 5.p; 6.1, ...). A switching circuit for switching a plurality of switching voltage levels. 4. The method according to any one of claims 1 to 3, The total number of the n first switching groups (1.1, ..., 1.n) is equal to the p second and third switching groups (5.1, ..., 5.p; 6.1, ...). , 6. p) less than the total number of converter circuits for switching a plurality of switching voltage levels. 4. The method according to any one of claims 1 to 3, The total number of the n first switching groups (1.1, ..., 1.n) is equal to the p second and third switching groups (5.1, ..., 5.p; 6.1, ...). , 6.p) a total number of switching circuits for switching of a plurality of switching voltage levels. 4. The method according to any one of claims 1 to 3, Each of the first, second, and third activatable bidirectional power semiconductor switches 2, 3, 7, 8, 9, 10, 11, and 12 is a driveable power semiconductor component that carries current in one direction, and the drive A converter circuit for switching of a plurality of switching voltage levels, characterized by a passive non-drivable power semiconductor component connected back in parallel with the possible power semiconductor component and carrying current in one direction. 4. The method according to any one of claims 1 to 3, In the n first switching groups (1.1, ..., 1.n), two first driveable bidirectional power semiconductors of each adjacent first switching groups (1.1, ..., 1.n) The switches 2 are integrated in one module, and the two second driveable bidirectional power semiconductor switches 3 of each of the adjacent first switching groups 1.1,..., 1.n are one Converter circuit for switching a plurality of switching voltage levels, characterized in that integrated into the module of. 4. The method according to any one of claims 1 to 3, In the n first switching groups (1.1, ..., 1.n), the first driveable bidirectional power semiconductor switch 2 and the second driveable bidirectional power semiconductor switch 3 are each one Converter circuit for switching a plurality of switching voltage levels, characterized in that it is integrated in the module. 4. The method according to any one of claims 1 to 3, In the p second switching groups (5.1, ..., 5.p), two first driveable bidirectional power semiconductors of each adjacent second switching groups (5.1, ..., 5.p) The switch 7 is integrated in one module, In the p third switching groups (6.1, ..., 6.p), two first driveable bidirectional power semiconductors of each adjacent third switching groups (6.1, ..., 6.p) Switch circuit for switching of multiple switching voltage levels, characterized in that the switch (8) is integrated in one module. 4. The method according to any one of claims 1 to 3, In the p second and third switching groups (5.1, ..., 5.p; 6.1, ..., 6.p), the first driveable bidirectional power semiconductor switch (7, 8) and the The second drive bidirectional power semiconductor switch (9, 10) is each integrated in one module, the converter circuit for switching of a plurality of switching voltage levels. 4. The method according to any one of claims 1 to 3, The third driveable bidirectional power semiconductor switch 11 of the first second switching group 5.1 and the third driveable bidirectional power semiconductor switch 12 of the first third switching group 6.1 are in one module. A converter circuit for switching a plurality of switching voltage levels, characterized in that it is integrated. 4. The method according to any one of claims 1 to 3, When there are a plurality of phases R, Y, B, the p-th second switching groups 5.p of the phases R, Y, B are connected in parallel with each other, and the phases ( Converter circuit for a plurality of switching voltage levels, characterized in that the p-th third switching groups (6.p) of R, Y, B are connected in parallel with each other. The method of claim 19, The capacitors 13 in the p-th second switching groups 5.p of the phases R, Y, B are combined to form one capacitor, Of the plurality of switching voltage levels, characterized in that the capacitors 14 in the p-th third switching groups 6.p of the phases R, Y, B are combined to form one capacitor. Converter circuit for switching.

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