KR101029094B1 - Heating plate combining method for quartz heater of semiconductor processing equipment, and fabrication method of quartz heater, and quartz heater fabricated by this method - Google Patents

Abstract

PURPOSE: A method for manufacturing a heater plate of a quartz heater for semiconductor processing equipment, a method for manufacturing the quartz heater and the quartz heater manufactured by the same are provided to prevent a heater plate from becoming damaged due to thermal expansion by vacuumizing the inside of the heater plate with a hot wire. CONSTITUTION: A heater plate is comprised of an upper plate(111) and a lower plate(112). A hot wire is formed between the upper plate and the lower plate. A hot wire insertion groove(112a) and a welding groove are formed on one side of the lower plate. A connection tube is combined with the other side of the lower plate with a quartz welding. The hot wire is processed to be inserted into the hot wire insertion groove of the lower plate.

Description

TECHNICAL FIELD [0001] The present invention relates to a method of bonding a heater plate to a quartz heater for semiconductor processing equipment, a method of manufacturing the quartz heater, and a quartz heater manufactured by the manufacturing method. BACKGROUND ART FABRICATED BY THIS METHOD}

The present invention relates to a manufacturing technique of a quartz heater used for a semiconductor processing facility, and more particularly, to a manufacturing technique of a quartz heater used for a semiconductor processing facility by combining a welding method and a groove processing technique to increase the bonding force between the upper plate and the lower plate, A method for manufacturing a quartz heater, and a quartz heater manufactured by the manufacturing method, which can increase the service life of the quartz heater while increasing the service life of the quartz heater, will be.

Generally, during the semiconductor manufacturing process, a vapor deposition process such as LPCVD (image vapor deposition) in which a film is formed on the surface of a wafer by using a deposition technique is performed. The quartz heater is a device provided as one of process equipments for such LPCVD process Is used to form a film of uniform thickness on the surface of the wafer by heating the wafer but keeping the surface temperature of the wafer constant.

The quartz heater used as one of the semiconductor processing equipments is composed of a heater plate in which a hot wire such as a carbon coil is interposed between an upper plate and a lower plate of quartz material and a tungsten electrode coupled to one side of the heater plate and connected to a hot wire for heating the wafer And is a consumable part that is periodically replaced with the passage of time of the process equipment because the upper plate of the heater plate is etched during the progress of the LPCVD process.

However, most of the quartz heaters used for semiconductor processing equipment are expensive because of the high price of imported products, resulting in a waste of foreign currency due to the burden of technical royalties.

Meanwhile, the quartz heater for semiconductor processing equipment will be schematically described in more detail. The heater plate is formed by sealing the upper plate and the lower plate with the hot wire positioned inside. The ceramic plate is bonded using a ceramic bond. Or the upper plate and the lower plate itself are fused to each other to bond and seal the upper plate and the lower plate to each other to constitute a heater plate incorporating the heat line.

However, in the case of the heater plate formed by the ceramic bonding method, since the product becomes opaque and can not be used, a crack is generated due to a difference in thermal expansion coefficient between the heater plate and the ceramic bond, There is a problem that the bonding surface is not smooth and it is difficult to catch other processing conditions.

Further, in the case of the heater plate in which the upper plate and the lower plate are fused and sealed together, the upper and lower plates are integrated by fusing, which makes it impossible to repair the heater when a failure occurs in the heat line. Therefore, the manufacturing cost is increased and the manufacturing cost is increased. In addition, since the thickness of the upper plate and the lower plate itself is reduced during the manufacturing process of the heater plate by welding, there is a problem that the service life is shortened.

Furthermore, in the case of a hot wire such as a carbon coil incorporated in the heater plate, there is a disadvantage that the coil is unwound and a problem is caused in the amount of heat generated.

The present invention has been made in order to solve the above problems, and it is an object of the present invention to provide a welding method and a grooving technique which are combined with each other to increase the mutual coupling force between the upper plate and the lower plate for constituting the heater plate, A method of manufacturing a quartz heater, a quartz heater manufactured by the manufacturing method, and a method of manufacturing the quartz heater. have.

In addition, the present invention can reduce the processing time and greatly reduce the material costs that have been incurred in the past. Also, the present invention can provide a semiconductor device capable of reducing the import substitution effect by the manufacture of domestic technology, A method of bonding a heater plate of a quartz heater for a process facility, a method of manufacturing a quartz heater, and a quartz heater manufactured by the manufacturing method.

The above objects and various advantages of the present invention will become more apparent from the preferred embodiments of the present invention by those skilled in the art.

According to an aspect of the present invention, there is provided a method of joining a heater plate to a quartz heater for semiconductor processing equipment, the method comprising: Wherein the upper plate and the lower plate are made of fused quartz for thermal stabilization, the diameter of the upper plate being smaller than the diameter of the lower plate; The upper plate is positioned on the lower plate so that the hot line is embedded in the lower plate through the hot-wire insertion groove and the hot-wire insertion groove is inserted into the lower plate, Joining them together by welding to perform a sealing treatment; The welding groove of the lower plate is formed immediately adjacent to the position where the quartz welding with the upper plate is made so that the quartz melted in the upper plate can easily permeate into the welding groove of the lower plate during the welding of the quartz so that the bonding durability between the upper plate and the lower plate can be improved .

A method of manufacturing a quartz heater for a semiconductor process facility according to the present invention comprises the steps of: preparing and cutting a material for forming a top plate and a bottom plate serving as a heater plate body of a quartz heater; A second step of lapping the material to polish the surface and polish the surface to provide flatness; A third step of forming a hot-wire insertion groove and a welding groove on one surface of the lower plate provided through the second step, wherein the welding groove is formed adjacent to a position where welding with the upper plate is made; A fourth step of joining the connection tube to one side of the other surface of the lower plate on which the hot-wire insertion groove and the welding groove are formed by quartz welding and communicating with the hot-wire insertion groove side; A fifth step of etching the lower plate and the upper plate welded to the quartz welded joint tube through the fourth step to remove impurities; A sixth step of heat treating the hot wire for inserting the hot wire into the hot wire insertion groove of the lower plate through the fifth step; A seventh step of inserting the heat-treated heat ray into the heat ray insertion groove of the lower plate and arranging the heat ray; An eighth step of arranging the heater plate with the hot plate incorporated therein by placing the upper plate on the lower plate on which the hot wire is inserted and bonding the upper and lower plates to each other by quartz welding; A ninth step of heat-treating the heater plate; A tenth step of etching the heater plate after the ninth step; An eleventh step of joining the vertical quartz tube to the connecting tube by quartz welding so that the tungsten electrode for supplying power is connected and connected to the heat wire side after the tenth step; And a control unit.

Further, the present invention is characterized by a quartz heater manufactured by the above-described method for manufacturing a quartz heater for semiconductor processing equipment.

According to the present invention, it is possible to manufacture the heater plate of the quartz heater with various thicknesses through the welding method and the groove processing technique, and the bonding durability of the upper plate and the lower plate constituting the heater plate can be greatly improved, And the coil can be prevented from being loosened. Thus, there is a useful effect that the life of the quartz heater can be extended while increasing the durability of the quartz heater.

In addition, it is possible to shorten the machining time compared with the conventional method, thereby to reduce the opportunity cost and incidental costs, and to greatly reduce the material costs that have been incurred in the past. There is a useful effect that can be saved.

Furthermore, since the manufacturing technology by domestic technology is secured, import substitution effect as well as waste of foreign currency can be minimized. In the present invention, a top plate in which cracks are generated in existing imports or used parts is brought to the bottom plate by welding, Can achieve a beneficial effect of being able to recycle the waste product.

In addition, by forming the inside of the heater plate in which the heat ray is embedded in a vacuum state, it is possible to maintain a high temperature at a constant heat value in the heat ray, to eliminate generation of impurity gas, to prevent breakage of the heater plate by thermal expansion, To-date.

1 is a flow diagram illustrating a method of manufacturing a quartz heater for a semiconductor process facility in accordance with a preferred embodiment of the present invention.
2 is a plan view of a quartz heater for a semiconductor process facility produced by a manufacturing method according to a preferred embodiment of the present invention.
3 is a schematic cross-sectional view of a quartz heater for a semiconductor process facility produced by a manufacturing method according to a preferred embodiment of the present invention.
FIG. 4 is a detailed sectional view showing a configuration of a top plate and a bottom plate in a quartz heater for a semiconductor process facility produced by a manufacturing method according to a preferred embodiment of the present invention. FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a flow chart showing a method of manufacturing a quartz heater for a semiconductor process facility according to a preferred embodiment of the present invention, and FIG. 2 is a view illustrating a quartz heater for a semiconductor process facility produced by a manufacturing method according to a preferred embodiment of the present invention FIG. 3 is a schematic cross-sectional view of a quartz heater for a semiconductor process facility produced by a manufacturing method according to a preferred embodiment of the present invention, and FIG. 4 is a cross-sectional view of a semiconductor produced by a manufacturing method according to a preferred embodiment of the present invention. FIG. 3 is a cross-sectional view showing the configuration of a top plate and a bottom plate in a quartz heater for a process facility.

A method of manufacturing a quartz heater including a method of bonding a heater plate of a quartz heater for a semiconductor process facility according to the present invention will now be described with reference to FIGS. 1 to 4. The method for preparing a quartz heater includes steps of preparing a material, checking the dimensions of the material, Cutting is performed by removing unnecessary portions or chipping in the step S1.

At this time, the material is for providing the upper plate 111 and the lower plate 112, which are the bodies of the heater plate 110 of the quartz heater 100, and the heat rays 113 ), It is preferable to use fused quartz (manufactured by melting quartz crystal) for thermal stabilization.

It is preferable that the upper plate 111 is formed to have a smaller diameter than the lower plate 112 in order to improve the durability of bonding between the upper plate and the lower plate during mutual coupling by quartz welding which will be described later.

The upper plate 111 and the lower plate 112 for body construction of the heater plate 110 having flatness by polishing and lapping the surface of the material having been subjected to the S1 step, Respectively (S2).

At this time, it is preferable that the lapping and polishing are performed by mechanical lapping and polishing for surface treatment and processing efficiency.

The hot-wire insertion groove 112a and the welding groove 112b are formed on one side of the lower plate 112 through the step S2 by mechanical machining such as an MCT (machining center) as shown in FIG. 4 (S3) .

In this case, it is preferable to process both the lower plate 112 and the outer surface of the upper plate 111 together, and the hot-wire insertion groove 112a is formed over the entire lower plate, and the welding groove 112b is formed between the upper plate 111 The quartz melted in the upper plate 111 can easily permeate into the welding groove 112b of the lower plate 112 during the quartz welding so that the upper plate 111 and the lower plate 111 112) so as to improve bonding durability.

"의 구조로 가공함으로써 열선삽입홈 내로 삽입 배치되는 열선(113)을 안정적으로 내부 배치 및 열선의 코일이 쉽게 풀리는 현상을 방지하여 발열량에 문제가 발생되는 것을 방지할 수 있도록 함이 바람직하다.As shown in the detailed view of FIG. 4, the hot-wire insertion groove 112a has a groove cross-

So that it is possible to prevent the problem that the heat generation amount is prevented from being generated by preventing the coils of the hot wire from being easily arranged and stably arranging the heat rays 113 inserted and arranged in the heat ray insertion grooves.

The connecting tube 121 is coupled to one side of the lower plate 112 on which the hot-wire inserting groove 112a and the welding groove 112b are formed through quartz welding (S4).

At this time, the connection tube 121 is made of a quartz material and is connected to one side of the hot-wire insertion groove 112a, and the welded portion to be quartz-welded is smoothly processed through grinding.

The connection tube 121 is quartz-welded and the upper and lower plates 112 and 111 are etched to remove impurities therefrom to obtain a high purity state (S5).

The hot wire 113 such as a carbon coil for inserting into the hot wire inserting groove 112a of the high purity treated bottom plate 112 is subjected to heat treatment at step S6.

At this time, the heat treatment of the heat ray 113 is performed through a heat treatment apparatus such as an electric furnace for about 10 minutes at 900 to 1,100 ° C. This removes the gas and impurities contained in the heat ray 113, It is for use.

The heat ray 113 heat-treated in the step S6 is inserted into the heat ray insertion groove 112a of the lower plate 112 and arranged (S7).

The hot wire 113 disposed in the hot wire insertion groove 112a of the lower plate 112 is exposed to the outside through the connection tube 121 so that the tungsten electrode disposed in the vertical quartz tube 122 Thereby making it easy to connect and connect with each other.

"의 구조로 가공 형성된 열선삽입홈(112a)측의 내부에 삽입되어 지지되므로 기존 열선 장착에 비해 열선(113)을 안정적으로 배치할 수 있으면서 열선의 코일이 쉽게 풀리는 현상을 방지할 수 있어 발열량에 문제가 발생되는 것을 방지할 수 있다.Here, the heat ray 113 has a groove cross section of "

The heat ray 113 can be stably placed relative to the existing heat ray mounting and the coil of the heat ray can be prevented from being easily loosened, It is possible to prevent a problem from occurring.

After inserting the heat ray 113 into the lower plate 112 through the step S7, the heat ray 113 is placed between the upper plate 111 and the lower plate 112 so that the upper plate 111 and the lower plate 112 Are bonded to each other by quartz welding so that the outer portion is sealed to form the heater plate 110 (S8).

At this time, when quartz welding is performed between the upper plate 111 and the lower plate 112, the quartz melted in the upper plate 111 seeps into the welding groove 112b of the lower plate 112, The joining force between the lower plate 112 and the lower plate 112 can be greatly increased and the joining durability of the quartz welding can be further improved due to the upper plate 111 formed by reducing the diameter of the lower plate 112.

After the heater plate 110 provided by quartz welding is heat-treated in step S8, the welded portion between the upper plate 111 and the lower plate 112 is ground (S9).

At this time, the heat treatment of the heater plate 110 is performed at a temperature of 1,100 to 1,200 ° C. through a heat treatment apparatus such as an electric furnace, and the two plates of the quartz welded upper plate 111 and the lower plate 112 are made of the same material, So that the upper plate 111 and the lower plate 112 are further fused into one quartz body through the heat treatment.

The heater plate 110 after the step S9 is etched (S10).

After the step S10, the vertical quartz tube 122 is coupled to the connection tube 121 by quartz welding so that the tungsten electrode for supplying power is connected and connected to the heat wire 113 (S11) .

At this time, the inside of the heater plate 110 in which the heat ray 113 is embedded is made vacuum, and the vertical quartz tube 122 located at the connection portion with the connection tube 121 is melted and subjected to an inner sealing process, It is preferable that the inside is sealed in a vacuum state.

Through the formation of the vacuum state inside the heater plate 110, it is possible to maintain the high temperature at a constant calorific value in the heat ray 113, to prevent the generation of impurity gas, to prevent the product from being damaged due to thermal expansion, The service life of the heater plate 110 can be improved.

In the present invention, the vertical quartz tube 122 may be directly coupled to the heater plate 110 by quartz welding without using the connecting tube 121.

In the present invention, a welding method is applied to the heater plate 110 in manufacturing the quartz heater, so that the upper plate 111 and the lower plate 112 can be manufactured and applied in various thicknesses, Lt; / RTI >

In addition, according to the present invention, the upper plate which is discarded by etching according to the progress of the LPCVD process in the existing product can be reused through quartz welding with the lower plate 112 having the weld groove 112b structure proposed in the present invention have.

It will be appreciated by those skilled in the art that changes may be made to the present invention without departing from the spirit and scope of the invention as defined by the appended claims.

100: quartz heater 110: heater plate
111: top plate 112: bottom plate
112a: Hot wire insertion groove 112b: Welding groove
113: heat line 121: connecting tube
122: Vertical quartz tube

Claims (5)

A method of joining a heater plate of a quartz heater for a semiconductor process facility in which a heating line is sealed between a top plate and a bottom plate,
The upper plate and the lower plate are made of fused quartz for thermal stabilization, and the diameter of the upper plate is smaller than the diameter of the lower plate;
The upper plate is positioned on the lower plate so that the hot line is embedded in the lower plate through the hot-wire insertion groove and the hot-wire insertion groove is inserted into the lower plate, Joining them together by welding to perform a sealing treatment;
The welding groove of the lower plate is formed immediately adjacent to the position where the quartz welding with the upper plate is made so that the quartz melted in the upper plate can easily permeate into the welding groove of the lower plate during the welding of the quartz so that the bonding durability between the upper plate and the lower plate can be improved Wherein the quartz heater is disposed in the vicinity of the heater plate. A method of manufacturing a quartz heater for semiconductor processing equipment used in an image vapor deposition process,
A first step of preparing and cutting a material for forming a top plate and a bottom plate to be a heater plate body of a quartz heater;
A second step of lapping the material to polish the surface and polish the surface to provide flatness;
A third step of forming a hot-wire insertion groove and a welding groove on one surface of the lower plate provided through the second step, wherein the welding groove is formed adjacent to a position where quartz welding is performed with the upper plate;
A fourth step of joining the connection tube to one side of the other surface of the lower plate on which the hot-wire insertion groove and the welding groove are formed by quartz welding and communicating with the hot-wire insertion groove side;
A fifth step of etching the lower plate welded to the connection tube through the fourth step and the upper plate to remove impurities;
A sixth step of heat treating the hot wire for inserting the hot wire into the hot wire insertion groove of the lower plate through the fifth step;
A seventh step of inserting the heat-treated heat ray into the heat ray insertion groove of the lower plate and arranging the heat ray;
An eighth step of arranging the heater plate with the hot plate incorporated therein by placing the upper plate on the lower plate on which the hot wire is inserted and bonding the upper and lower plates to each other by quartz welding;
A ninth step of heat-treating the heater plate;
A tenth step of etching the heater plate after the ninth step;
An eleventh step of joining the vertical quartz tube to the connecting tube by quartz welding so that the tungsten electrode for supplying power is connected and connected to the heat wire side after the tenth step; Wherein the quartz heater comprises a quartz heater. 3. The method of claim 2,
In the eleventh step, when the connection tube and the vertical quartz tube are coupled by quartz welding, the inside of the heater plate having the heating wire is vacuumed, and then the vertical quartz tube located at the connection portion with the connection tube is melted and the inside is sealed And the inside of the heater plate is sealed in a vacuum state. 3. The method of claim 2,
Wherein the upper and lower plates are made of fused quartz for thermal stabilization. The quartz heater according to any one of claims 2 to 4, wherein the quartz heater is manufactured by a method for manufacturing a quartz heater for semiconductor processing equipment.

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