KR101025126B1 - Liquid crystal display device - Google Patents

Abstract

The present invention relates to a liquid crystal display device in which a double transistor is formed so as to simultaneously drive sub-pixels on both sides of the gate line. A second source electrode and a first drain electrode and a second drain electrode are formed in parallel to each other along an extending direction of the gate line, thereby reducing the width of the gate line to increase the aperture ratio.

Double transistor, 2 drain, aperture ratio

Description

Liquid crystal display device {LIQUID CRYSTAL DISPLAY DEVICE}

1 is a plan view schematically showing some pixels of a conventional liquid crystal display device.

FIG. 2A is a plan view illustrating a thin film transistor portion of the liquid crystal display of FIG. 1. FIG.

FIG. 2B is a cross-sectional view illustrating a thin film transistor portion of the liquid crystal display of FIG. 1. FIG.

3 is a plan view showing a thin film transistor portion of a liquid crystal display device according to an embodiment of the present invention.

4 is a plan view showing a thin film transistor portion of a liquid crystal display device according to another embodiment of the present invention.

Description of the main parts of the drawing

103, 203, 303: source electrode 104: drain electrode

204a, 304a: first drain electrode 204b, 304b: second drain electrode

107, 207, 307: data lines 108, 208, 308: gate lines

The present invention relates to a liquid crystal display device, and more particularly to a liquid crystal display device that can improve the aperture ratio and image quality.

Recently, the importance of the display device for displaying various information is increasing with the rapid development of the information and communication field, and one of the existing display devices (Cathode Ray Tube) has a certain limit to meet the latest trend of light weight and thinning. Could not. As a flat panel display, a liquid crystal display device (LCD), a plasma display panel (PDP), and an electroluminescence display (ELD) have been developed to meet expectations. It's going on.

Among the display devices, the liquid crystal display device is a display device having advantages such as light weight, thinness, and low power, and is widely used not only for display devices such as notebook computers, but also for desktop computers and large TVs. There is a trend.

A liquid crystal display device is a display device using optical anisotropy of a liquid crystal, and implements an image by adjusting the light transmittance of the liquid crystal using an electric field. To this end, the liquid crystal display device includes a liquid crystal panel in which pixels are arranged in a matrix and a driving circuit for driving the liquid crystal panel.

The liquid crystal panel includes an upper substrate and a lower substrate, and a liquid crystal layer is formed between the two substrates. The liquid crystal layer realizes a desired image by adjusting the transmittance of light transmitted according to an input image signal. The lower substrate is a thin film transistor substrate, and includes a plurality of pixels, and a thin film transistor as a switching element is formed in each pixel to apply an image signal supplied from the outside to the pixel electrode formed in the pixel. The upper substrate is a color filter substrate, and a color filter layer is formed to display colors according to each image signal.

1 is a plan view schematically illustrating some pixels of a conventional liquid crystal display device, and FIGS. 2A and 2B are plan and cross-sectional views illustrating a portion of the thin film transistor of FIG. 1. FIG. 1 and FIGS. 2A and 2B will be described with reference to FIGS. In the case of the conventional LCD, the first substrate 101 on which the thin film transistor (TFT) 106 is mounted and the second substrate (not shown) on which the color filter opposite to the first substrate is mounted at regular intervals are provided. The liquid crystal layer is formed in the space where the first substrate 101 and the second substrate are bonded to each other.

A plurality of gate lines 108 and data lines 107 intersect in a matrix form on the first substrate 101 to form a plurality of pixels, and a thin film transistor is formed in the pixels on the first substrate 101. 106, a pixel electrode 110 and an alignment film (not shown) are formed. In addition, the pixel electrode 110 and the gate line 108 partially overlap to form the storage capacitor 109. Although not shown, a black matrix, a color filter, a common electrode, and an alignment layer are formed on the second substrate.

In more detail, the thin film transistor 106 protrudes from the gate line 108 to receive a scan signal from the outside, a gate insulating film 111 formed on the gate electrode 102, and the gate electrode. A semiconductor layer 105 formed on the 102 and activated as an image signal is input to form an active layer; and an image protruding from the data line 107 and formed on the semiconductor layer and input through the data line 107. It consists of a source electrode 103 and a drain electrode 104 for applying a signal to the pixel.

The semiconductor layer 105 includes an ohmic contact layer 116 and an active layer 117. The ohmic contact layer 116 is formed for ohmic contact between the source / drain electrodes 103 and 104 and the active layer 117, and the active layer 117 is doped with a small amount of impurities in the semiconductor material. The current flows through the specific conditions under which the voltage is applied.

Here, the semiconductor layer 105 corresponding to the spaced apart portions of the source electrode 103 and the drain electrode 104, that is, the two electrodes corresponds to a region in which a channel (CH), which is a moving passage of electrons or holes, is formed. do. The thin film transistor 106 has an electrical characteristic determined according to the characteristics of the channel CH. The characteristics of the channel CH include a width / length (W /), which is a ratio of the length L of the channel and the width W of the channel. L) determined by the ratio. At this time, the channel length L corresponds to the distance between the source electrode 103 and the drain electrode 104, and the width W of the channel corresponds to the length of the opposite side of the source electrode 103 and the drain electrode 104. do.

In addition, a protective layer is formed on the first substrate 101 on which the thin film transistor 106 is formed, and the pixel electrode 110 is formed thereon. In this case, the pixel electrode 110 is connected to the drain electrode 104 through the contact hole 126 formed in the protective layer.

The pixel electrode 110 receives a data signal from the source electrode 103 and the drain electrode 104 of the thin film transistor, which is a switching element, to form an electric field together with the common electrode, which protrudes from the gate line 108. When a voltage is applied to the gate electrode 102 of the thin film transistor, a channel CH is formed in the semiconductor layer 105 so that a current flows. The data signal is connected to the gate line 108 to be applied to each pixel electrode 110.

Accordingly, the image is displayed by adjusting the light transmittance of the liquid crystal layer by an electric field applied between the pixel electrode 110 and the common electrode according to the data signal supplied for each pixel.

In the liquid crystal display device having the structure as described above, each pixel is driven by the thin film transistor 106, and the pixel voltage is maintained by the storage capacitor 109.

However, in order to implement moving images and the like as a display device of a liquid crystal display device, a fast reaction speed is required. If the thin film transistor is driven within a short time, the image may become uneven because the storage capacitor is not sufficiently charged and an afterimage may occur. In addition, as the liquid crystal display becomes larger, the gate lines and the data lines arranged vertically and longer on the substrate become longer, and thus, the driving of the thin film transistors formed along one gate line is not constant due to an increase in line resistance. Line delay may also occur.

In addition, since the region in which the thin film transistor is formed should be covered with a black matrix to prevent light leakage, the wider the region, the larger the influence on the aperture ratio of the liquid crystal display device. That is, in order to increase the aperture ratio, it is necessary to reduce the area of the region where the thin film transistor is formed.

In order to solve the above problems, the present invention changes the structure of the pixel to increase the response speed of the pixel and maintain a uniform pixel voltage, and in particular, reduces the line width of the gate line portion of the thin film transistor to provide a liquid crystal display device having a high aperture ratio. The purpose is to provide.

As described above, a liquid crystal display device for achieving the object of the present invention includes a first substrate and a second substrate facing the first substrate; Gate lines and data lines disposed perpendicular to each other on the first substrate to define adjacent first and second pixels; A thin film transistor shared by the adjacent first and second pixels; And a liquid crystal layer formed between the first substrate and the second substrate, wherein the thin film transistor comprises: a gate electrode constituting the gate line; A semiconductor layer formed on the gate electrode; A source electrode formed on the semiconductor layer, the source electrode being divided into first and second source electrodes having a S-shape lying in different directions; And a first drain electrode connected to the first pixel and a second drain electrode connected to the second pixel, the first drain electrode connected to the first pixel and the second drain electrode connected to the second pixel. The data lines may be arranged side by side at different distances from each other.
In addition, the thin film transistor of the present invention comprises a gate line and a data line disposed perpendicular to each other; A semiconductor layer formed on the gate line; A source electrode formed on the semiconductor layer and divided into first and second source electrodes having a S-shape lying in different directions; And first and second drain electrodes formed to be spaced apart from each other at different distances from the data line, and disposed to be parallel to each other along the longitudinal direction of the gate line.

Since the thin film transistor is shared by two adjacent sub-pixels, the gate electrode and the source electrode are integrally formed so that only one of the thin film transistors is formed in the first and second pixels. In this case, the source electrode may be divided into a first source electrode and a second source electrode, and since the first and second drain electrodes are formed and operated for each of the first and second pixels, the same as forming two thin film transistors. You get an effect. Therefore, such a thin film transistor is called a double transistor.

According to the present invention, the first and second source electrodes are formed to be separated from the first and second drain electrodes by a predetermined distance, respectively, and the first and second drain electrodes are adjacent to each other along the longitudinal direction of the gate line. Characterized in that formed to be arranged side by side.

The shape of the first and second source electrodes may be formed in a U-shaped or c-shaped with one direction opening in a different direction, and thus the shape of the source electrode may have a lying L-shaped or S-shaped.

In the present invention, the gate line portion not constituting the gate electrode to increase the aperture ratio has a width narrower than that of the gate electrode.

The liquid crystal display device including the double transistor may be applied to a horizontal field liquid crystal display device (IPS; in plane switching), and the first and second drain electrodes may be electrically connected to the first and second drain electrodes. A first pixel electrode 210a and a second pixel electrode 210b, a common line formed in parallel with the gate line, and electrically connected to the common line, and having a first pixel electrode 210a and a second pixel electrode 210b. ) And a common electrode spaced apart with an empty space therebetween to generate a horizontal electric field.

As described above, the present invention divides a pixel into a plurality of first and second pixels by a gate line and a data line, and forms two sub-pixels adjacent to the gate line to share a thin film transistor. In other words, the present invention has a plurality of gate lines, each gate line and data line is divided into a first pixel and a second pixel adjacent to the gate line based on the switching element for driving the first pixel and the second pixel It is characterized in that to form a thin film transistor at the same time. In this case, the thin film transistor generally includes a gate electrode, a semiconductor layer, a source electrode, and a drain electrode. The source electrode of the thin film transistor is integrally formed, and is spaced apart from the source electrode at a predetermined interval so that the first drain electrode and the second drain electrode are formed. This is formed to form a double transistor.

The present invention described above will be described in detail with reference to the accompanying drawings.

3 is an enlarged plan view of a double transistor portion formed on a first substrate of a liquid crystal display device as one embodiment of the present invention.

As shown in the drawing, the liquid crystal display according to the present invention is partitioned into a first pixel above the gate line and a second pixel below the gate line by the gate line 208 and the data line 207. The first pixel and the second pixel are simultaneously driven by the thin film transistor formed on the substrate 208. In the drawing, only some pixels of the liquid crystal display are displayed, and in actual liquid crystal display, there are a plurality of gate lines 208, and the plurality of first and second pixels are divided by the gate lines 208. In this case, a thin film transistor for simultaneously driving the first pixel and the second pixel is formed on the gate line 208, and the source electrode 203 of the thin film transistor is integrally formed as one, and the first source electrode 203a is formed. And the second source electrode 203b, and are respectively connected to the first and second pixel electrodes 210a and 210b formed on the first pixel and the second pixel, so that the first drain electrode 204a and the second source electrode 203b are electrically connected to each other. Two drain electrodes 204b are formed. Since the thin film transistor according to the embodiment of the present invention as described above can have the same effect as forming two drain electrodes and simultaneously forming two transistors, the thin film transistor corresponds to a double transistor.

In this case, the double transistor forms a channel between the first and second drain electrodes 204a and 204b and the first and second source electrodes 203a and 203b, respectively. The gap between the electrodes is the width of the channel, and the length between the two electrodes is the length of the channel. Accordingly, the characteristics of the thin film transistor may be changed by adjusting the length and width of the channel so that the ratio of the channel length and the channel width has a predetermined value.

The thin film transistor is formed on the gate line 208. In the conventional invention, a portion of the gate line 208 is often protruded and used as a gate electrode. When forming the thin film transistor, the semiconductor layer 205 and the source electrode 203 and the gate line 208 are directly formed on the gate line 208. By forming the first and second drain electrodes 204a and 204b, an area of the gate line 208 under the semiconductor layer 205 may be directly used as the gate electrode 202. That is, part of the gate line 208 is used as the gate electrode, and the region of the semiconductor layer immediately corresponds to the gate electrode.

In order to form the thin film transistor, first, the semiconductor layer 205 must be formed on the gate line 208. The semiconductor layer 205 includes an active layer, an active layer of the first and second source electrodes 203a and 203b, and An ohmic contact layer for ohmic contact with the first and second drain electrodes 204a and 204b. Here, the semiconductor layer 205 corresponding to the portion separated from the first and second source electrodes 203a and 203b and the first and second drain electrodes 204a and 204b, that is, the two electrodes, is a movement path for electrons or holes. Corresponds to the channel.

As described above, the first and second source electrodes 203a and 203b form a channel between the first and second drain electrodes 204a and 204b, and according to the width or length of the channel, Since the characteristics are different, the width or length of the channel needs to have a predetermined value for the thin film transistor. However, since the thin film transistor portion is covered with a black matrix to prevent light leakage, the opening ratio is lowered when the thin film transistor portion is widened. Therefore, in order to overcome the above disadvantage of decreasing the aperture ratio and to keep the channel constant while reducing the size of the thin film transistor, the first and second source electrodes 203a and 203b and the first and second drain electrodes 204a and 204b are used. The length and width of the channel between the two are formed to be constant, but the width h occupied by the gate line 208 is preferably small.

In order to satisfy the above condition, in the embodiment of the present invention, as shown in the drawing, the first and second source electrodes 203a and 203b are bent in a concave or U-shape to concave the inner concave portion (concave portion). ) And the first and second drain electrodes 204a and 204b, respectively.

Since the thin film transistor is a double transistor, two drain electrodes must be formed to correspond to one source electrode, and the source electrode must be formed to face the first and second drain electrodes in both directions with respect to the gate line. Can be formed into an H shape. When the source electrode 203 is formed in the H shape, the source electrode and the drain electrode may be symmetrically formed based on the gate line 208. In this case, the first and second drain electrodes 204a and 204b may be formed in a rod shape as shown in the drawing or may face portions of the first and second source electrodes 203a and 203b facing each other. It is possible to form different widths between the first and second pixel electrodes 210a and 210b. The shapes of the first and second drain electrodes 204a and 204b may be formed in various shapes, spaced apart from the first and second source electrodes 203a and 203b, if the width and length of the channel suitable for the characteristics of each thin film transistor are formed. Formation is possible.

In this case, since the first and second source electrodes 203a and 203b can be surrounded by three surfaces of the first and second drain electrodes 204a and 204b, the region of the portion where the thin film transistor is formed is formed. There is an advantage that can form a long channel while reducing. At this time, even if the bent portion of each electrode is not necessarily straight, other forms are possible as long as it is possible to form a channel suitable for the characteristics of the thin film transistor. For example, a curved source electrode or a source electrode having multiple bends may be possible.

Meanwhile, the first pixel electrode 210a and the second pixel electrode 210b are electrically connected to the first drain electrode 204a and the second drain electrode 204b, respectively, and the contact hole 226 is generally formed. It is usually connected electrically through. Other methods of electrically connecting the contact hole 226 may be possible.

In addition, referring to the drawings, the length and width of the channel formed between the first and second source electrodes 203a and 203b and the first and second drain electrodes 204a and 204b may be predetermined according to characteristics of the thin film transistor. The channel between the first and second source electrodes 203a and 203b and the first and second drain electrodes 204a and 204b is formed on the semiconductor layer 205 and has a width of the gate line 208. (h) may be greater than or equal to the width of the source electrode 203 and the semiconductor layer 205.

Although not shown in the figure, a gate insulating film formed over the entire surface of the substrate is interposed between the gate electrode 202 and the semiconductor layer 205. A passivation layer is formed on the entire surface of the substrate including the data line 207, and the first and second pixel electrodes 210a and 210b are formed on the passivation layer. In this case, the first and second pixel electrodes 210a and 210b may be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), and the first and second drain electrodes 204a and 204b. And a passivation layer therebetween, and may be electrically connected through the contact hole 226.

In addition, a black matrix and a color filter are formed on the second substrate to prevent light leakage, and an alignment layer for determining an initial alignment direction of the liquid crystal is coated on opposite surfaces of the first and second substrates. In addition, a liquid crystal layer is formed between the first substrate and the second substrate to adjust the light transmittance according to signals applied to the common electrode and the first and second pixel electrodes 210a and 210b.

In the liquid crystal display device having the above-described structure, since the source electrode is formed as one, but the drain electrode corresponding thereto is formed separately, the same effect as driving two transistors at the same time can be obtained. Therefore, it is possible to simultaneously apply an electrical signal to the pixels on both sides of the gate line based on the gate line, and simultaneously drive two sub-pixels disposed on both sides of the gate line.

When manufacturing the liquid crystal display device, if the thin film transistors formed on each gate line are formed of double transistors, two thin film transistors may be formed in each pixel. Although there are various advantages in the liquid crystal display of the double transistor structure, one of them is pre-charging to precharge the voltage applied to the pixel.

As the liquid crystal is driven and the amount of light transmitted is adjusted according to the orientation of the liquid crystal, the quality of the image varies according to the reaction time of driving the liquid crystal due to the voltage applied to each pixel. In the case of moving images, a fast response time is required. In the case of the conventional liquid crystal display device, since the value of the capacitor of the pixel is small, the charging time is short, which may cause problems such as deterioration in luminance due to uncharged brightness. In this case, after pre-charging each pixel to a predetermined voltage through the gate electrode, the same polarity voltage is applied again to finally charge the pixel to a desired voltage, thereby enabling fast charging. do. Therefore, the charging characteristic can be improved. That is, the result is that one thin film transistor in one gate line and one thin film transistor in the next gate line are sequentially formed on each pixel, so that a voltage can be applied to one pixel twice. Will be.

Therefore, in the case of a large liquid crystal display device, a signal may be delayed. In the liquid crystal display device using the double transistor, the liquid crystal is easily charged to a predetermined voltage because the liquid crystal display device undergoes a pre-charging process. Delay can be prevented and the display quality of the liquid crystal display device can be improved.

The liquid crystal display of the dual transistor structure is characterized in that the source electrode is H-shaped to form two thin film transistors together with the two drain electrodes. The source electrode and the first and second drain electrodes are formed on the gate line as described above. The gate line is generally an opaque conductive material and is covered with a black matrix to prevent light leakage from the thin film transistor. The aperture ratio of the device is lowered. Therefore, when manufacturing the double transistor, reducing the width of the gate line forming the thin film transistor has an effect of increasing the aperture ratio. Therefore, another embodiment of the present invention is characterized in that the structure of the source electrode of the double transistor is formed in an asymmetrical structure rather than a symmetrical structure to increase the aperture ratio while maintaining a constant length and width of the channel.

4 illustrates another embodiment of the present invention, in which two drain electrodes are not arranged in a symmetrical structure along the extending direction of the gate line 308, but are formed to have different distances from the data line. In the double thin film transistor, the first electrode and the second drain electrode are formed to have the same distance in the data line by forming the source electrode with H. However, in the present invention, the first and second drain electrodes 304a and 304b may be formed to have different distances from the data line 307 so that the arrangement of the first and second drain electrodes 304a and 304b may be different. To be. In this case, the first and second drain electrodes 304a and 304b may be formed so that mutually adjacent channels are arranged side by side in the extending direction of the gate line 308 and may be disposed to face different directions.

As described above, when the first and second drain electrodes 304a and 304b are formed, the channel has a U-shaped or c-shaped shape which is opened in the direction in which the first and second drain electrodes 304a and 304b are located. It is worn. In this case, since the first and second drain electrodes 304a and 304b are disposed side by side at different distances from the data line 307, the channel length may be longer than in the embodiment shown in FIG.

At this time, the source electrode 303 is spaced apart from the first and second drain electrodes 304a and 304b to form a channel. The source electrode 303 has a bent structure to secure the width and length of the channel. It is formed in the form. In addition, the source electrode 303 may be divided into a first source electrode 303a and a second source electrode 303b. Thus, the first and second source electrodes 303a and 303b may also be divided into yaw or U. Concave portions recessed in different directions in the form of a ruler are present, and the yaw or U-shaped portions are alternately formed in a vertical direction with respect to the gate line 308. That is, the first and second source electrodes 303a and 303b may be arranged in parallel with each other in a U-shape opened in opposite directions to the gate line 308. The first and second drain electrodes 304a and 304b having a rod shape or an iron shape may be formed in the concave portions of the first and second source electrodes 303a and 303b at regular intervals.

When the source electrode is formed in the shape of a lying L-shaped as described above, there is an advantage that the width of the gate line can be reduced more than when the H-shaped is formed (see FIG. 3). Referring to FIG. 2, the width of the gate line 208 when formed in an H shape corresponds to h, and h is the first and second source electrodes 203a and 203b and the first and second drains. Since the electrodes 204a and 204b are formed symmetrically with respect to the gate line 208, there is little room for reducing the length of the channel. However, as shown in FIG. 4, when the cross-section is formed in a letter L shape, the first and second source electrodes 303a and 303b and the first and second drain electrodes 304a and 304b are alternately formed. The width H of the gate line 308 can be maintained.

Therefore, as a result, the length of the channel is increased, so that the width of the gate line H, which can obtain the width and length of the constant channel, can be formed narrow, and the area to be covered by the black matrix by reducing the width of the gate line 308 is obtained. This decreases the opening ratio is effective.

In the present invention, a thin film transistor is formed on the gate line so that a part of the gate line serves as a gate electrode. In this case, the gate line portion not applied to the gate electrode is preferably formed to have a narrow width. This is because if the width of the gate line is narrow, the aperture ratio also increases. The liquid crystal panel does not have the ability to emit light by itself, and the light emitted from the backlight passes through the substrate, the liquid crystal, the black matrix, and the like, and if the transmittance is low, brightness problems such as luminance decrease may occur. It must be largely influenced by the aperture ratio. Therefore, it is desirable to reduce the width of the gate line as described above.

The double transistor according to the embodiment of the present invention can be applied to a horizontal field type liquid crystal display device. The twisted nematic mode liquid crystal display device, which is mainly used as a flat panel display device of high quality and low power, has a disadvantage in that the viewing angle is narrow. This is due to the refractive anisotropy of the liquid crystal molecules, because the liquid crystal molecules oriented horizontally with the substrate are oriented almost perpendicular to the substrate when a voltage is applied to the liquid crystal display panel.

Accordingly, in-plane switching mode (IPS) liquid crystal display devices for aligning liquid crystal molecules in a substantially horizontal direction with a substrate to solve a viewing angle problem have been actively studied in recent years. The common electrode and the pixel electrode are disposed on the same substrate to generate a horizontal electric field, and the liquid crystal is oriented along the horizontal electric field so that the orientation varies depending on the applied voltage, and thus the viewing angle is improved. Even when the thin film transistor is formed in the horizontal field type liquid crystal display device, it may be formed in the form of a double transistor as in the embodiment of the present invention.

It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the spirit of the present invention. For example, an embodiment of the present invention shows a thin film transistor in which a source electrode and a drain electrode are formed on a gate line, but the gate electrode is formed on the source electrode and the drain electrode to form a thin film transistor.

Accordingly, embodiments of the present invention are not limited to the above-described embodiments, and the scope of the present invention should be defined by the scope of the claims rather than the contents of the detailed description.

As described above, according to the present invention, two sub-pixels can be driven simultaneously by changing the structure of the thin film transistor with a double transistor so as to simultaneously drive the sub-pixels on both sides of the gate line. In addition, there is an effect of increasing the response speed of the pixel. In particular, the U-shaped first and second source electrodes opened in different directions on the gate line are formed, and the first and second drain electrodes are arranged side by side in the extending direction of the gate line to form the gate line of the thin film transistor. By reducing the width of H, the aperture ratio of the liquid crystal display device can be increased.

Claims (8)

A first substrate and a second substrate facing the first substrate; Gate lines and data lines disposed perpendicular to each other on the first substrate to define adjacent first and second pixels; A thin film transistor shared by the adjacent first and second pixels; And It comprises a liquid crystal layer formed between the first substrate and the second substrate, The thin film transistor is A gate electrode constituting the gate line; A semiconductor layer formed on the gate electrode; A source electrode formed on the semiconductor layer, the source electrode being divided into first and second source electrodes having a S-shape lying in different directions; And A first drain electrode connected to the first pixel and a second drain electrode connected to the second pixel, the first and second drain electrodes being disposed side by side in the longitudinal direction of the gate line; The liquid crystal display device, characterized in that arranged side by side at a different distance from the data line. The method of claim 1, The gate line portion not constituting the gate electrode has a width narrower than the width of the gate electrode. The method of claim 1, A common line formed in parallel with the gate line; And And a common electrode electrically connected to the common line and forming a horizontal electric field together with the pixel electrode. delete Gate lines and data lines disposed perpendicular to each other; A semiconductor layer formed on the gate line; A source electrode formed on the semiconductor layer and divided into first and second source electrodes having a S-shape lying in different directions; And A thin film transistor including first and second drain electrodes formed to be spaced apart from each other at different distances from the data line and disposed in parallel with each other in the longitudinal direction of the gate line. The method of claim 5, A common line formed in parallel with the gate line; And And a common electrode electrically connected to the common line and generating a horizontal electric field together with the pixel electrode. delete The method of claim 5, The first and second source electrodes are U-shaped openings in opposite directions to each other, the thin film transistors, characterized in that arranged in parallel along the longitudinal direction of the gate line.

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