KR101011679B1 - Pulse Electron Beam Amplifier using One Side of a Cavity Resonator - Google Patents

Abstract

The electron amplifier according to the present invention uses a cavity resonator in a vacuum state. The resonator shall be at least flat on one side. A constant DC voltage is applied between the flat side and the opposite side. In order to apply a DC voltage, the wall between the two surfaces is made of a dielectric or electrically insulated by inserting a vacuum gap. AC voltage should be applied so that the electric field is formed in parallel with the direction of the electric field by applying the DC voltage. By applying electromagnetic waves to the resonator, a strong AC voltage can be applied between the two surfaces. It is preferable to apply a DC voltage and an AC voltage so that the electrons move only vertically with respect to the plane where the electron amplification occurs. When the DC voltage and the AC voltage are applied in parallel to each other at the same time, the electron amplification by the generation or disappearance of secondary electrons can be made only on one side of the cavity resonator. In addition, when the voltage ratio between DC and AC is properly adjusted in the case of electron amplification only on one side, phase locking occurs, and the electron amplification phenomenon occurs strongly, so that the electron amplification phenomenon can be stably shown even under high current density conditions. There is a number.

Secondary electron, composite voltage, insulator, vacuum gap, protrusion, electron beam amplification

Description

Pulse Electron Beam Amplifier using One Side of a Cavity Resonator}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pulsed electron beam amplifier, and more particularly, to stably only at one wall of a resonator by additionally applying alternating current (AC) through electromagnetic waves to a cavity resonator to which a constant direct current (DC) voltage is applied. The present invention relates to an electron beam amplifier that generates a pulsed electron beam by electron amplification caused by secondary electrons.

The explanation and experimental proof of the amplification principle of electron amplification technology in cavity resonator using secondary electrons has been done for more than 50 years. Despite the well-known technologies, these electronic amplification technologies are rarely applied industrially or academically.

In other words, the electron amplification technology combines the electromagnetic wave with the resonator to create a periodically changing AC electric field between both walls of the resonator, and moves and collides / absorbs electrons from one wall to the other at a time interval corresponding to half the period of the electromagnetic wave. It is a technology that allows the generation of new secondary electrons continuously. Even if the electrons that act as seeds for amplification are not artificially injected into the resonator, very small amounts of naturally occurring electrons serve as the first primary electrons to be used for amplification. The electrons are amplified to form a powerful electron beam. At this time, the amplified electrons are required to satisfy a specific amplification condition and thus develop into a pulsed electron beam state. However, as the number of electrons increases, the ratio of electrons deviating from the amplification condition by the repulsive force between the electrons increases. In addition, when the output of the applied electromagnetic waves is constant, the field strength between both walls of the resonator is weakened by the screening effect as the number of electrons increases, so electrons are transferred from one wall to the other within the half-cycle time of the electromagnetic waves. It may fail to move. In addition, due to various causes, more and more electrons are released from the electron amplification conditions, leading to a saturation state where no electron amplification occurs.

1 is a conceptual diagram of a conventional electron amplifier for amplifying electrons by applying an AC voltage inside the cavity resonator.

Existing techniques briefly take an AC electric field E _a inside a resonator electrically connected in all directions as shown in FIG. 1. The electrons alternate between the walls, generating secondary electrons with collisions. The time that electrons move from one wall to the other is half the period of the AC electric field, and the generation of new secondary electrons and the redirection of the AC electric field occur almost simultaneously. Inserting a grid into one wall or both walls causes some electrons to come out of the resonator. As the electron beams come out at a time interval equal to the period of the AC electric field, a pulsed electron beam is created.

As such, in the conventional electron amplification technology using both walls of the AC electric field and the resonator, an increase in the ratio of electrons that deviates from the electron amplification condition cannot be prevented. The further away from the amplification condition, the greater the problem, because the more strongly there is a tendency to move away from the amplification condition. In other words, as the electrons move away from the amplification conditions, the more electrons tend to move away from the amplification conditions.

In order to overcome this problem, it is the most common method to make the intensity of the AC electric field applied to the resonator sufficiently large. A powerful AC electric field has the effect of increasing the time that the electron amplification condition is satisfied, which increases the number of finally amplified electrons. However, in this method, if the frequency of the electromagnetic wave is more than several GHz , the electromagnetic wave which is stronger than kilowatt (kW) level should be applied to the resonator. As the period of the electromagnetic wave rises, the required output also tends to increase, so if you want to amplify the electron with the same AC electric field over a period of several tens of GHz, you have to use an impractically powerful electromagnetic source. In addition, due to the structure of the resonator for resonating the electromagnetic wave inside the resonator without loss or a device for coupling the high-power electromagnetic wave source and the resonator, etc., there is a problem that the entire apparatus is complicated and expensive.

Accordingly, an object of the present invention is to solve the above-described problems, and an object of the present invention is to apply an AC electric field to a cavity resonator and simultaneously apply a DC electric field in a direction parallel to the AC electric field, thereby increasing the strength of the AC electric field. The effect is to move by intensity, resulting in the generation and dissipation of electrons on only one wall, not on both walls of the resonator, and the time it takes for the electrons to generate and return to their original position equals the period of the AC electric field. It is to provide a pulsed electron beam amplifier that can exhibit the electron amplification phenomenon by secondary electrons as in the conventional electron amplifier.

In addition, another object of the present invention is to provide a phase locking to maintain the self-amplification condition by appropriately adjusting the ratio of the AC voltage and the DC voltage applied to the cavity resonator, thereby not satisfying the electron amplification condition The present invention provides a pulsed electron beam amplifier capable of changing electrons to satisfy a condition of an electron amplification condition, and thus generating a pulsed electron beam with a larger number of electrons than a conventional electron amplifier. .

Further, another object of the present invention is to make a wall between two plates made of a dielectric having a high refractive index, or a metal surface, unlike in a common cavity resonator in which all surfaces are joined by a metal plate, a DC voltage cannot be applied between both walls. By cutting a portion to form a vacuum gap or by making a photonic crystal with a regularly arranged dielectric, it is electrically isolated between two plates applying a DC voltage and deflected by DC voltage. By providing a composite AC voltage between the two plates, providing a pulse electron beam amplifier capable of generating a pulsed electron beam by forming a phase locking to maintain the electron amplification conditions at the same time the electron amplification occurs only on one wall There is.

First, to summarize the features of the present invention, the electron beam amplifier according to one aspect of the present invention for achieving the above object of the present invention is a cavity resonator structure having a vacuum inside, a direct current between both sides of the cavity resonator And applying a combined voltage of the direct current and alternating voltage so that the electric field by the alternating current voltage is parallel, and generating and dissipating electrons on either side of the cavity resonator to generate a pulsed electron beam through the electron amplification phenomenon. Characterized in that.

The cavity resonator structure includes a structure in which a vacuum gap is separated so that the two metal plates are insulated from each other, and the composite voltage is applied between the two metal plates.

The cavity resonator structure includes a structure that insulates between two parallel metal plates using insulating means, and applies the synthesized voltage between the two parallel metal plates.

The insulating means comprises an insulator having a predetermined dielectric constant, or a dielectric rod of a photonic crystal structure arranged periodically.

Electromagnetic amplification can be caused by drawing an electromagnetic wave as the alternating voltage through the dielectric rod.

An opening may be formed in one of the two parallel metal plates to emit a pulsed electron beam.

A surface protruding in a longitudinal direction perpendicular to the direction in which the electron beam is emitted may be formed in any one or more of the two parallel metal plates.

According to the setting of the synthesis voltage, electron amplification may be caused in the metal plate except for the protruding surface or the protruding surface.

By changing the direction of the DC voltage is applied to the other surface can be changed to the surface where the electron amplification occurs.

It is possible to use a coating of a metal or an insulating film for changing the secondary electron emission characteristics on the surface on which the electron amplification occurs on both surfaces.

According to the pulsed electron beam amplifier according to the present invention, by simultaneously applying the DC voltage and the AC voltage in a parallel direction, the electron amplification by the secondary electron generation / extinction is made only on one wall of the cavity resonator, and the appropriate voltage of the DC and AC voltage The ratio of phase locking can be achieved to maintain stable electron amplification even under high current density conditions.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout. Like reference numerals in the drawings denote like elements.

2 is a conceptual diagram of a pulsed electron beam amplifier 100 according to an embodiment of the present invention.

As shown in the cross-sectional view of Figure 2, the pulsed electron beam amplifier 100 according to an embodiment of the present invention, such that the AC electric field (E _a ) and the DC electric field (E _d ) parallel to the cavity resonator 110 in a vacuum state therein. The voltage obtained by combining the AC voltage and the DC voltage can be applied. That is, by applying the combined voltage of the AC voltage and the DC voltage through the appropriate terminals on both sides of the resonator 110, the electron amplification phenomenon due to the generation and disappearance of the electrons on only one side of the resonator 110 may appear. The electrons move the space between the two sides and generate secondary electrons with collisions on one side . Inserting a grid on one side or both sides causes some electrons to come out of the resonator. As the electron beams come out at intervals as long as the period of the AC electric field, a pulsed electron beam is created. Reverse the direction of the DC voltage can change the side where the electrons are amplified to the opposite side.

Here, the magnitude of the DC voltage is preferably applied smaller than the maximum value of the magnitude of the AC voltage . Accordingly, by properly adjusting the ratio of the AC voltage and the DC voltage, the electrons can be repeatedly generated and dissipated only on one side of the resonator 110. When the direction of the DC voltage is changed, the surface where the electrons are generated and destroyed disappears. The electrons that are generated and started to move in a specific phase of the AC voltage that changes over time return to their original positions when the AC voltages are in phase and collide with the resonator surface to create new secondary electrons. This particular phase is called the resonance phase.

The graph of Figure 7 shows the value of the resonance the phase (θ ₀₎ of the ratio (β) of the AC voltage (E _{a, s)} the DC voltage (E _{d, s).} θ _c is a phase force by the electric field is zero forced toward the facing away from the metal plate (a high voltage metal plate) formed of the electron amplification by electron resonance in the large phase (θ ₀₎ than θ _c. n = 1 means that the time it takes for the electron to return to its original position is equal to one times, or equal, the period of the AC electric field. Generally, n is a natural number of 1 or more. When γ is zero, it means that the energy of the first secondary electrons generated inside the resonator is zero. In general, γ has a value greater than or equal to 0. If the magnitudes of the AC and DC voltages are large enough, γ may be regarded as 0. The graph of Figure 6 is n = 1, γ = 0 is the specific case.

3 is an example of a structure of a pulsed electron beam amplifier 200 that allows a DC voltage to be applied to a resonator structure according to the inventive concept.

As shown in the cross-sectional view of Figure 3, the electron beam amplifier 200 according to an embodiment of the present invention, the DC voltage and AC through the power supply between the two parallel metal plates (110, 120) electrically insulated by the insulator (130) By simultaneously applying a voltage, one of the two metal plates 110 and 120 is configured to amplify the pulsed electron beam. The two flat metal plates 110 and 120 are preferably placed in parallel, but may be curved or uneven to each metal plate by appropriate design. The electron beam amplifier 200 according to an embodiment of the present invention forms a structure in which the internal space surrounded by the two metal plates 110 and 120 and the insulator 130 is in a vacuum state.

The insulator 130 is configured such that the two metal plates 110 and 120 are not electrically connected to each other, and two terminals from which a DC voltage and an AC voltage are combined are connected to each of the two metal plates 110 and 120 to receive power. Can be. As a result, the pulsed electron beam amplified by the metal plate having the high DC voltage 150 can be emitted out of the resonator through a predetermined grid (not shown) formed in the metal plate having the low DC voltage 150. . Alternatively, an opening may be formed in the surface where the electron amplification is performed to emit the electron beam. Here, the insulator 130 that insulates the two metal plates 110 and 120 may be filled with a material having a high refractive index in order to reduce the loss of the electric field.

4 is another example of the structure of the pulsed electron beam amplifier 300 that enables the application of a DC voltage to the resonator structure according to the inventive concept.

As shown in the cross-sectional view of FIG. 4, the electron beam amplifier 300 according to another embodiment of the present invention separates the two metal plates 310 and 320 in a vacuum state from each other, so that the vacuum gaps between the two metal plates 110 and 120 are separated from each other. 330 to be insulated from each other. The principle of electron amplification is similar to that described in FIG. 2, and a pulsed electron beam is applied to one of the two metal plates 110 and 120 by simultaneously applying a DC voltage and an AC voltage through a power supply device between the two metal plates 110 and 120. This structure is to be amplified. The pulsed electron beam generated under the above resonant phase conditions may be emitted out of the resonator through a predetermined opening (not shown) formed in one of the two metal plates 110 and 120.

5 is another example of the structure of the pulsed electron beam amplifier 400 that enables the application of a DC voltage to the resonator structure according to the inventive concept.

As shown in the cross-sectional view of FIG. 5, the electron beam amplifier 400 according to another embodiment of the present invention has a similar configuration to that of FIG. 2, except that two metal plates are periodically arranged in a photonic crystal structure. The dielectric rod 430 is electrically insulated. The two metal plates may have various shapes such as a circle and a rectangle, and the dielectric bars 430 may be periodically arranged in a matrix structure. As the AC electric field (electromagnetic waves) is totally reflected from the dielectric rod 430 of the photonic crystal structure formed of a semiconductor material, etc., the AC electric field (electromagnetic waves) can be trapped in the vacuum space surrounded by the two metal plates and the dielectric rod 430 of the photonic crystal structure. have. The photonic band gap phenomenon occurs by the dielectric rods 430 periodically arranged in the photonic crystal structure, thereby forming a resonator having a low loss of electromagnetic waves. Pulsed electron beam in one of the two metal plates under resonant phase conditions when AC electric field (electromagnetic waves) is introduced into the vacuum space surrounded by the two metal plates and the dielectric bar 430 of the photonic crystal structure while applying a DC voltage between the two metal plates. This can be amplified. The pulsed electron beam generated in the resonant phase condition may be emitted out of the resonator through a predetermined opening (not shown) formed in one of the two metal plates.

6 is another example of the structure of a pulsed electron beam amplifier 500 that enables the application of a DC voltage to the resonator structure in accordance with the inventive concept.

As shown in the cross-sectional view of FIG. 6, the electron beam amplifier 300 according to another embodiment of the present invention may include two metal plates 510 and 520 and a dielectric bar 530 having a photonic crystal structure, similar to the structure of FIG. 5. Unlike the structure of FIG. 5, the resonator structure has a surface 521 in which the metal plate 520 through which electron amplification is performed protrudes. The protruding surface 521 is formed in a lengthwise direction perpendicular to the direction in which the electron beam is emitted, and the AC voltage is applied between the two metal plates 510 and 520 so as to pass between the dielectric bars 530 of the photonic crystal structure. The electromagnetic wave RF is introduced as a voltage. At this time, according to the proper setting of the DC voltage (Vo) and the electromagnetic wave (RF), the electron amplification is generated in the protruding surface 521 to generate an electron beam, or the surface except the protruding surface 521 of the metal plate ( The electron amplification is performed on the other inner surface of the metal plate parallel to the protruding surface 521 to generate an electron beam. This is because, depending on the proper adjustment of the DC voltage (Vo) and the incoming electromagnetic wave (RF) size, it is possible to create a resonant phase condition in which electrons collide with each other on the protruding surface 521 or the other surface of the metal plate to form new secondary electrons. Here, although the protruding surface 521 is formed on only one of the two metal plates as an example, the present invention is not limited thereto, and in some cases, the protruding surface 521 may be formed on both metal plates.

The choice of the plane on which the electron amplification occurs is possible by changing the direction of the DC voltage. In addition to the structure of having the surface 521 protruding from one of the two parallel metal plates 510 and 520 as shown in FIG. 6, the geometrical structure of the resonator is very diverse and can be used differently as necessary.

Electron amplification is determined solely by the AC and DC voltages around the metal surface where electrons are generated and destroyed repeatedly, so the geometry of the two insulated metal surfaces is not an absolute factor for generating an electron amplification. An insulating film or a metal may be coated on the entire surface of the metal surface where the electron amplification is performed, and in general, it is preferable to use a material having a small secondary electron emission coefficient and a small energy of incident electrons such that the secondary electron emission coefficient is 1. Proper material selection can lower the minimum DC and AC voltage levels for electron amplification. By properly adjusting the ratio of AC voltage to DC voltage, electrons from different phases (e.g., phase difference 0.432) gather around the same phase (e.g., phase difference 0.143) over time as shown in the graph of FIG. You can do that. This phase locking phenomenon, in which the phase is locked to a specific resonance phase, makes the electron amplification phenomenon strong .

As described above, the present invention has been described by way of limited embodiments and drawings, but the present invention is not limited to the above embodiments, and those skilled in the art to which the present invention pertains various modifications and variations from such descriptions. This is possible. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined not only by the claims below but also by the equivalents of the claims.

1 is a conceptual diagram of a conventional electron amplifier for amplifying electrons by applying an AC voltage inside the cavity resonator.

2 is a conceptual diagram of a pulsed electron beam amplifier according to an embodiment of the present invention.

3 is an example of a pulsed electron beam amplifier structure capable of applying a DC voltage to the resonator structure according to the inventive concept.

4 is another example of a pulsed electron beam amplifier structure capable of applying a DC voltage to the resonator structure according to the inventive concept.

5 is another example of the structure of a pulsed electron beam amplifier capable of applying a DC voltage to the resonator structure according to the inventive concept.

6 is another example of a pulsed electron beam amplifier structure that enables the application of a DC voltage to the resonator structure according to the inventive concept.

7 is a graph showing the value of the resonance phase according to the ratio of the AC voltage and the DC voltage.

8 is a graph showing electrons starting from different phases gathering near the same phase over time.

Claims (10)

Includes two metal plates, one on each side, A cavity resonator structure having a vacuum state between two metal plates, By applying a combined voltage of the DC and AC voltages so that the electric field by the DC and AC voltages in parallel between the two metal plates, the generation and disappearance of the electrons on either side of the two metal plates is repeated to pulse through the electron amplification phenomenon An electron beam amplifier, characterized by generating an electron beam. The method of claim 1, And separating the vacuum gaps so that the two metal plates are insulated from each other and applying the synthesized voltage between the two metal plates. The method of claim 1, And an insulating beam to insulate between two parallel metal plates as said two metal plates, and to apply said composite voltage between said two parallel metal plates. 4. An electron beam amplifier according to claim 3, wherein said insulation means comprises an insulator having a predetermined dielectric constant, or a dielectric rod of a periodically arranged photonic crystal structure. The electron beam amplifier according to claim 4, wherein electromagnetic waves as the alternating voltage are introduced to pass through the dielectric rod. 4. The electron beam amplifier of claim 3, wherein an opening is formed in one of the two parallel metal plates to emit a pulsed electron beam. The electron beam amplifier according to claim 3, wherein a surface protruding in a longitudinal direction perpendicular to the direction in which the electron beam is emitted is formed in at least one of the two parallel metal plates. 8. The electron beam amplifier according to claim 7, wherein electron amplification is caused on the protruding surface or on another inner surface of the metal plate parallel to the protruding surface in accordance with the setting of the synthesis voltage. The electron beam amplifier of claim 1, wherein the direction in which the DC voltage is generated is changed to another side by changing the direction of the DC voltage. The electron beam amplifier according to claim 1, wherein a metal or an insulating film for changing the secondary electron emission characteristics is coated on the surface on which the electron amplification is generated.

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