KR101008955B1 - High-frequency/high-performance phase shifters using pin diodes - Google Patents

Abstract

The present invention relates to an ultra-high frequency band high performance phase shifter circuit using a PIN diode, wherein the metal-insulator-metal capacitors 202 and 214 are connected to an input port 201 and an output port 215 to separate DC voltage and current. And, connected to the metal-insulator-metal capacitors 202 and 214, to ground and grounded biases 204 and 212 for state control of the PIN diodes 208, 209, 210, and 211 to direct current voltage into the circuit. The first inductors 203 and 231 for applying an AC signal and blocking the AC signal to prevent leakage of the signal, and the PIN diodes 208, 209 and 210 that are alternately controlled according to the voltages of the biases 204 and 212. 211 and a second inductor 205 which performs a function of a high-pass filter having a π shape to lead the phase of the signal received from the PIN diodes 208 and 210 by 90 °. 206 and the first capacitor 207, a low frequency barrel of the form A third inductor 216, 217 and a second capacitor 218 that perform a function of a low-pass filter to phase lagging a signal applied from the PIN diodes 209 and 211 by 90 °. 219, and a fourth inductor 220 that blocks leakage of an AC signal applied from the third inductors 216 and 217 and the second capacitors 218 and 219.

Pin diode, phase shifter

Description

High frequency band high performance phase shifter circuit using PIN diode {HIGH-FREQUENCY / HIGH-PERFORMANCE PHASE SHIFTERS USING PIN DIODES}

The present invention relates to a high frequency band high performance phase shifter circuit using a PIN diode, and more particularly, a technique for securing high performance phase shifter characteristics in a high frequency band in a phase shifter circuit operation essential for high frequency wireless communication and radar systems. It is about.

Recently, various commercial satellite systems have been proposed for high speed data transmission. These high-speed systems use phased-array antennas, in which thousands of phase shifters are used in the form of microwave monolithic microwave integrated circuits (MMICs). Therefore, a low-performance, high-performance phase shifter is a key component of such a system.

In the past, phase shifters used in military wireless communications have been developed based on GaAs pHEMT technology. Active phase shift systems are now being used in commercial products for wireless communications through existing GaAs pHEMT technology.

However, when the GaAs pHEMT is used as a switching element, the cut-off frequency, which exhibits high frequency characteristics, is limited to within 2 THz, resulting in degradation of performance such as insertion loss and reflection loss of the overall phase shifter [Ref: (1) Z. Yonghong, F. Zhenghe, F. Yong, "Ka-band 4-bit phase shifter with low phase deviation," International Conference on Microwave and Millimeter Wave Technology Preceedings, 2004. (2) E. Taniguchi, M. Hieda, H. Kurusu, M. Funada, Y. Iyama, and T. Takagi, "A Ku-band matched embedded-FET phase shifter", European Microwave Conference, 1999]

In addition, research is being actively conducted to apply a CMOS technology of 0.25 μm or less to a microwave phase shifter. However, this technique also greatly limits its performance in the band above 20 GHz due to limitations in high-frequency device characteristics such as cutoff frequency of less than 1 THz. [D. Kang, H. Lee, and S. Hong, "Ku-band MMIC phase shifter using a parallel resonator with 0.18-μm CMOS technology," IEEE Trans. Microwave Theory Tech. , vol. 54, no. 1, pp. 294-301, Jan. 2006. D. Kang, and S. Hong, "A 4-bit CMOS phase shifter using distributed active swiches," IEEE Trans. Microwave Theory Tech. , vol. 55, no. 7, pp. 1476-1483, July 2007.]

Another method of fabricating a phase shifter is to shift the phase of a signal using a MEMS device as a switching device. This technology has the advantage of small insertion loss, but it is very difficult to manufacture MEMS devices, which makes it difficult to combine with other wireless communication circuits and increases the cost. [B. Pillans, S. Eshelman, A, Malczewski, J. Ehmke, and C. Goldsmith, "Ka-band RF MEMS phase shifters," IEEE Microwave and Guided Wave Letters , vol. 9, no. 12, pp. 520-522, Dec. 1999. J. Hayden, and G. Rebeiz, "Very low-loss distributed X-band and Ka-band MEMS phase shifters using metal-air-metal capacitors,＂ IEEE Trans. Microwave Theory Tech. , Vol. 51, no. 1, pp. 309-314, Jan. 2003.]

In conclusion, the selection of switching elements in the phase shifter implementation is an important factor in determining the characteristics and price of the entire circuit.

As the wireless communication market became active, wireless communication systems became popular and the number of users increased. Therefore, the frequency of use is gradually increasing to accommodate a large amount of communication capacity. Therefore, the transmission / reception component that transmits and receives signals in the wireless communication technology, which is the communication means of the information society, is one of the most important parts and influences the performance of the system. Is required.

This high frequency semiconductor device is mainly applied to a phased-array radar system. In particular, the phase shifter is an essential circuit for controlling the direction of the emitted beam by changing the phase of the signal. The phase shifter, which is a key circuit in a phased array radar system, is manufactured based on a field effect transistor (FET) device such as a high electron mobility transistor (HEMT) or a metal semiconductor field effect transistor (MESFET).

However, in the case of such FET-based phase shifters, insertion loss, retrun loss, and root mean square phase error, which are the characteristics of the phase shifter in the high frequency band, are determined according to the performance of the device. Square phase error is still a big problem.

The present invention has been made to solve the above problems, an object of the present invention, to secure the characteristics of ultra-high frequency band high performance phase shifter using a PIN diode excellent in high frequency characteristics. In other words, by using the PIN diode, insertion loss, return loss, and root mean square phase error, which are the characteristics of the phase shifter in the high frequency band, are compared with the conventional switch circuit. The purpose is to improve.

The high frequency band high performance phase shifter circuit using a PIN diode according to the first embodiment of the present invention for achieving the technical problem is connected to the input port 201 and the output port 215 to separate the DC voltage and current Metal-insulator-metal capacitors 202, 214 and metal-insulator-metal capacitors 202, 214 are connected to ground and grounded biases 204 for state control of PIN diodes 208, 209, 210, and 211. , The first inductors 203 and 231 connected to the circuit 212 and applying a DC voltage to the circuit and blocking the AC signal to prevent leakage of the signal, and the flow of the signal alternately according to the voltages of the biases 204 and 212. The PIN diodes 208, 209, 210, and 211, which control the voltage, and the high-pass filter of π type, perform a function of 90 [deg.] Ahead of the phase of the signal received from the PIN diodes 208,210. Second inductors 205 and 206 that are phase leading and The third capacitor performs a function of the first capacitor 207 and a low-pass filter having a π shape to phase-lag the phase of the signal received from the PIN diodes 209 and 211 by 90 °. Fourth inductor 220 to block leakage of AC signals applied from inductors 216 and 217 and second capacitors 218 and 219 and third inductors 216 and 217 and second capacitors 218 and 219. It includes.

In addition, the ultra-high frequency band high performance phase shifter circuit using the PIN diode according to the second embodiment of the present invention is connected to the input port 301 and the output port 308 is a metal-insulator-metal to separate the DC voltage and current A first inductor 311 connected to the capacitors 302 and 307 and a bias 310 to apply a DC voltage to the circuit and to block the AC signal to prevent leakage of the signal; and a ground to prevent leakage of the AC signal. The second inductor 305, the PIN diodes 304, 306, and 314, which are alternately adjusted according to the voltage of the bias 310, and the high-pass filter of π type. The third inductors 303 and 309 and the PIN diodes 304 and 306 which perform phase functions to lead the phases of the signals received from the PIN diodes 304 and 306 by 90, 45, or 22.5 degrees. Include.

In addition, the ultra-high frequency band high performance phase shifter circuit using the PIN diode according to the third embodiment of the present invention is connected to the bias 408 to apply a DC voltage to the circuit and to block the AC signal to prevent leakage of the signal. 1 inductor 409, second inductors 402 and 405 connected to ground to prevent leakage of AC signals, and PIN diodes 403 and 404 that are alternating according to the voltage of bias 408 to regulate the flow of the signal. , 412), and a T-shaped high-pass filter to pass the signal through the PIN diodes 403 and 404, and to advance the phase by 90, 45, or 22.5 degrees. Diodes 403 and 404 and a third inductor 407.

In addition, the ultra-high frequency band high performance phase shifter circuit using the PIN diode according to the fourth embodiment of the present invention is connected to a bias 511 to apply a DC voltage to the circuit and block the AC signal to prevent leakage of the signal. The first inductor 507, the second inductors 503 and 509 connected to the ground to prevent leakage of AC signals, and the input port 501 and the output port 510, respectively, are connected to the DC voltage and current at both ends. Separate metal-insulator-metal capacitor 505, PIN diodes 502, 508, and 506, alternating according to the voltage of bias 511, to regulate the flow of the signal; Alternatively, the third inductor 504 phase lagging 2.8125 degrees and the phase leading the signal while passing the signal in the reverse direction according to the voltage of the bias 511 and the phase leading to 5.625 degrees or 2.8125 degrees ) PIN DIO De 506.

In addition, the ultra-high frequency band high performance phase shifter circuit using the PIN diode according to the fifth embodiment of the present invention is connected to a bias 911 to apply a DC voltage to the circuit and cut off an AC signal to prevent signal leakage. A first inductor 902, a second inductor 909 connected to ground to prevent leakage of AC signals, and a PIN diode 903, 905, 906 alternated according to the voltage of the bias 911 to regulate the flow of the signal. , 907).

According to the present invention as described above, the 180-degree, 90-degree single bit phase shifter, 90-degree, 45-degree, 22.5-degree single bit phase shifter, 11.25degree, 5.625degree using a PIN diode having excellent high frequency characteristics. By suggesting a single-bit phase shifter and a phase shifter that derives the desired phase change at the desired frequency through the reference transmission line and the phase shift transmission line, it obtains excellent return loss and insertion loss, and has multiple bits with small average square phase error. It is possible to implement a phase shifter, and compared with a conventional circuit, the phase shifter can be implemented with a small area, that is, a high performance low area phase shifter can be realized.

Specific features and advantages of the present invention will become more apparent from the following detailed description based on the accompanying drawings. Prior to this, terms and words used in the present specification and claims are to be interpreted in accordance with the technical idea of the present invention based on the principle that the inventor can properly define the concept of the term in order to explain his invention in the best way. It should be interpreted in terms of meaning and concept. It is to be noted that the detailed description of known functions and constructions related to the present invention is omitted when it is determined that the gist of the present invention may be unnecessarily blurred.

First, FIG. 1 is a diagram illustrating a current-voltage curve of an InGaAs PIN diode (hereinafter, referred to as a 'PIN diode') inserted into a phase shifter circuit according to the present invention. After the turn-on voltage, the current increases exponentially with the voltage and reverse current does not flow with the increase of the voltage.

In this case, the PIN diode is used as a switching element. In general, an I layer (intrinsic layer) is inserted between the PIN diodes to reduce capacitance in an off state, thereby improving high frequency characteristics and reducing reverse biased breakdown voltage. It is an improved device.

In the following, the description will be omitted, but the PIN diode according to the present invention uses an InGaAs PIN diode, and the PIN diode has a high cutoff frequency because of high electron mobility and small bandgap. It has various advantages for applications in microwave monolithic microwave integrated circuits (MMICs) in high frequency bands such as small turn on voltages.

In addition, the characteristics of the PIN diode of the present invention is verified using a switching device, but the present invention is not limited thereto, and it is found that the present invention can be applied to a PIN diode device made of various materials such as GaAs or GaN.

In addition, the PIN diode has a p metal size of 10 × 10 μm ㅂ, and the start-voltage measurement analysis showed that the starting voltage was measured at 0.5 V for a current of 10 mA, and the on-state resistance and off- State capacitance values were analyzed as 1.6Ω and fF, respectively. The cut-off frequency, which represents the characteristics of the switch element, is 5.23 THz, which is represented by Equation 1, and the result shows that the PIN diode has a DC and RF characteristic as a switch element compared to GaAs-based FETs. It proves very good.

[Equation 1]

On the other hand, the phase shifter is a multi-bit phase shifter (single-bit phase shifter) in series with a phase shift of 180, 90, 45, 22.5, 11.25, and 5.625 degrees. -bit phase shifter). For example, the 4-bit phase shifter is connected to 180˚-90˚-45˚-22.5˚ to obtain phase shift characteristics for 16 states between 0˚ and 360˚ based on the minimum phase displacement unit of 22.5˚. The 6-bit phase shifter is connected to 180˚-90˚-45˚-22.5˚-11.25˚-5.625˚ and has a phase shift for 64 states between 0˚ and 360˚ based on the minimum phase displacement unit of 5.625˚. Characteristics can be obtained.

The ultra-high frequency band high performance phase shifter circuit using the PIN diode according to the first embodiment of the present invention is a circuit for a 180 ° single bit phase shifter through the PIN diode as shown in FIG.

First, the metal-insulator-metal capacitors 202 and 214 are connected to the input port 201 and the output port 215, respectively, to separate DC voltage and current at both ends.

In addition, the first inductor 203, 213 is connected to the metal-insulator-metal capacitors 202, 214 and the bias 204, 212 for controlling the state of the PIN diodes 208, 209, 210, 211. The DC voltage is applied to the circuit and the AC signal is blocked to prevent leakage of the signal, and the PIN diodes 208, 209, 210, and 211 are alternately adjusted according to the voltages of the biases 204 and 212 to control the flow of the signal.

In addition, the second inductor 205, 206 and the first capacitor 207 perform a function of a high-pass filter having a π shape to phase 90 the signal applied from the PIN diodes 208, 210. Phase leading, and the third inductors 216 and 217 and the second capacitors 218 and 219 function as a low-pass filter having a π shape, and thus the PIN diodes 209 and 211. Phase lagging of the signal received from the second phase (phase lagging), the fourth inductor 220 is connected to the ground AC applied from the third inductor (216, 217) and the second capacitor (218, 219) Shut off signal leakage.

The circuit as described above can control the flow of signals by changing the state of the PIN diodes 208, 209, 210, 211 through the adjustment of the bias 204, 212 voltage Vbias. As follows.

First, when the voltages of the biases 204 and 212 are set to positive, the PIN diodes 208 and 209 are turned on, and the PIN diodes 210 and 211 are turned off. The phase of the signal passing through the 206 and the first capacitor 207, that is, the high-pass filter of π type and passing through the PIN diodes 208 and 209, is 90 ° ahead.

On the other hand, if the voltages of the biases 204 and 212 are set to negative, the PIN diodes 208 and 209 are turned off, the PIN diodes 210 and 211 are turned on, and the signal of the circuit is the third inductor 216. , 217, and the second capacitors 218 and 219, that is, a low-pass filter having a π shape, pass through the PIN diodes 210 and 211 and are 90 ° behind.

In this way, the signal flow can be changed to change the phase of the entire 180 ° at the output. At this time, the inductance value of the inductor used in the high pass filter and the low pass filter and the capacitance value of the capacitor are such that the phase value desired to change at the center frequency and the instantaneous change of phase with respect to the frequency are '0', and the filter It is determined by the condition that there is no loss in passing, and the inductance and capacitance values derived according to the above conditions are as shown in Equation 2 below.

&Quot; (2) "

Using the above Equation 2, the signal is advanced 45 ° in the high-pass filter, and the signal is 45 ° in the low-pass filter. Displacers can also be implemented.

On the other hand, the ultra-high frequency band high performance phase shifter circuit using a PIN diode according to the second embodiment of the present invention, as shown in Figure 3 through the PIN diode for 90 °, 45 ° and 22.5 ° single bit phase shifter Circuit.

First, the metal-insulator-metal capacitors 302 and 307 are connected to the input port 301 and the output port 308, respectively, to separate DC voltage and current at both ends.

In addition, the first inductor 311 is connected to the bias 310 to apply a DC voltage to the circuit and block the AC signal to prevent leakage of the signal, the second inductor 305 is connected to the ground to leak the AC signal And the PIN diodes 304, 306, 314 are alternating according to the voltage of the bias 310 to regulate the flow of the signal.

In addition, the third inductors 303 and 309 and the PIN diodes 304 and 306 perform a function of a high-pass filter having a π shape, so that the third inductors 303 and 309 may receive a signal from the applied PIN diodes 304 and 306. Phase leading 90 °, 45 ° or 22.5 °.

The circuit as described above can control the flow of the signal by changing the state of the PIN diodes 304, 306, 314 through the adjustment of the bias (310) voltage (Vbias), the operation mode is as follows.

First, when the voltage of the bias 310 is set to positive, the PIN diodes 304 and 306 are turned on and the PIN diode 314 is turned off. At this time, the signal of the circuit passes through the PIN diodes 304 and 306. As a result, the phase change does not occur, and the fourth inductor 312 and the PIN diode 314 provided in the reverse direction form a parallel resonance circuit to prevent signal leakage to ground.

On the other hand, if the voltage of the bias 310 is set to negative (-), the PIN diodes 304 and 306 are turned off, and the PIN diode 314 is turned on, and the signal of the circuit is generated by the third inductor 303 and 309. They pass 90 °, 45 ° or 22.5 ° phase leading through a high-pass filter in the form of π.

In this way, the signal flow can be varied to change the overall 90 °, 45 °, or 22.5 ° phase at the output. At this time, the inductance value of the inductor used in the high pass filter and the capacitance value of the PIN diode or capacitor are such that the phase value desired to be changed at the center frequency and the instantaneous change of phase with respect to the frequency are '0', and the filter passing through It is determined by the condition that there is no time loss, and the inductance and capacitance values derived according to the above conditions are as shown in Equation 3 below.

&Quot; (3) "

On the other hand, the ultra-high frequency band high performance phase shifter circuit using the PIN diode according to the third embodiment of the present invention, as shown in FIG. Circuit for ° and 22.5˚ single-bit phase shifters.

First, the first inductor 409 is connected to the bias 408 to apply a DC voltage to the circuit and cut off the AC signal to prevent leakage of the signal, and the second inductors 402 and 405 are connected to the ground to connect the AC signal. To prevent leakage, the PIN diodes 403, 404, 412 are alternating according to the voltage of the bias 408 to regulate the flow of the signal.

In addition, the PIN diodes 403 and 404 and the third inductor 407 perform a function of a T-type high-pass filter to pass a signal and phase 90 °, 45 °, or 22.5 °. Phase leading.

The circuit as described above can control the flow of signals by changing the state of the PIN diodes 403, 404, 412 by adjusting the bias 408 voltage Vbias.

First, when the voltage of the bias 408 is set to positive (+), the PIN diodes 403 and 404 are turned on and the PIN diode 412 is turned off. At this time, the signal of the circuit passes through the PIN diodes 403 and 404. As a result, no phase change occurs, and the first inductor 409 and the PIN diode 412 provided in the reverse direction form a parallel resonance circuit, thereby preventing signal leakage to ground.

On the other hand, if the voltage of the bias 408 is set to negative (-), the PIN diodes 403 and 404 turn off and the PIN diode 412 is turned on, and the signal of the circuit is generated by the third inductor 407, that is, T. It passes through a high-pass filter of the type 90 °, 45 ° or 22.5 ° phase leading.

In this way, the signal flow can be varied to change the overall 90 °, 45 °, or 22.5 ° phase at the output. At this time, the inductance value of the inductor used in the high pass filter and the capacitance value of the PIN diode or the capacitor are such that the phase value to be changed at the center frequency and the instantaneous change of phase with respect to the frequency are '0', and the filter It is determined by the condition that there is no loss in passing, and the inductance and capacitance values derived according to the above conditions are shown in Equation 4 below.

&Quot; (4) "

Meanwhile, the ultra-high frequency band high performance phase shifter circuit using the PIN diode according to the fourth embodiment of the present invention is a circuit for 11.25 ° and 5.625 ° single bit phase shifters through the PIN diode as shown in FIG. 5. .

First, the first inductor 507 is connected to the bias 511 to apply a DC voltage to the circuit and block the AC signal to prevent leakage of the signal, the second inductors 503 and 509 are connected to the ground to the AC signal To prevent leakage.

In addition, the metal-insulator-metal capacitor 505 is connected to the input port 501 and the output port 510, respectively, to separate DC voltage and current at both ends, and the PIN diodes 502, 508, 506 are biased 511. Alternating according to the voltage of) regulates the flow of the signal.

In addition, the third inductor 504 passes the signal and phases the phase at 5.625 ° or 2.8125 °, and the PIN diode 506 passes the signal and changes the phase when the signal is switched in the reverse direction. 5.625 ° or 2.8125 ° phase leading.

The circuit as described above may control the flow of the signal by changing the state of the PIN diodes 502, 506, and 508 through the adjustment of the bias 511 voltage Vbias.

First, when the voltage of the bias 511 is set to positive, the PIN diodes 506 and 508 are turned on and the PIN diode 502 is turned off. At this time, the signal is the third inductor 504 and the PIN diode 508. ), So that the phase is behind 5.625 ° or 2.8125 °.

On the other hand, if the voltage of the bias 511 is set to negative (-), the PIN diodes 506 and 508 are turned off and the PIN diode 502 is turned on, and the signals are forward PIN diode 502 and reverse PIN diode ( 506) to advance the phase by 5.625 ° or 2.8125 °.

In this way, the signal flow can be varied to change the overall 11.25 ° or 5.625 ° phase at the output. At this time, the inductance value of the inductor used in the high pass filter and the capacitance value of the PIN diode or capacitor are such that the phase value desired to be changed at the center frequency and the instantaneous change of phase with respect to the frequency are '0', and the filter passing through It is determined by the condition that there is no time loss, and the inductance and capacitance values derived according to the above conditions are as shown in Equation 5 below.

[Equation 5]

The high frequency band high performance phase shifter circuits using the PIN diodes according to the first to fourth embodiments are a single bit phase shifter circuit for shifting phases of 180 degrees and 90 degrees according to the first embodiment of FIG. 2. A single bit phase shifter circuit for shifting phases of 90 °, 45 ° and 22.5 ° according to the second and third embodiments of FIGS. 3 and 4, 11.25 ° and according to the fourth embodiment of FIG. A single bit phase shifter circuit that shifts the phase of 5.625 degrees.

The ultra-high frequency band high performance phase shifter circuit using the PIN diode according to the first to fourth embodiments as described above implements a multi-bit phase shifter in combination of a single bit phase shifter. This is possible.

6 shows a series of 180 ° phase shifters according to the first embodiment, 11.25 ° phase shifters according to the fourth embodiment, and 22.5 °, 45 ° and 90 ° phase shifters according to the second embodiment in series. FIG. 7 is a diagram illustrating a bit phase shifter, and FIG. 7 is a diagram illustrating a layout of the 5-bit phase shifter shown in FIG. 6, and FIG. 8 is derived through ADS simulation based on a circuit designed as shown in FIGS. 6 and 7. A graph showing the insertion loss and phase shift characteristic curves of a 5-bit phase shifter.

In addition to the 5-bit phase shifter described above, the combination of the circuits according to the first to fourth embodiments may implement a multi-bit phase shifter having 2 to 6 bits.

On the other hand, the ultra-high frequency band high performance phase shifter circuit using a PIN diode according to the fifth embodiment of the present invention, as shown in Figure 9 is a circuit that obtains the phase difference by the length difference between the transmission line (transmission line) of the two, It is a circuit for a single-bit phase shifter that can realize all phases of 180 °, 90 °, 45 °, 22.5 °, 11.25 °, and 5.625 ° through a PIN diode in the center frequency band.

First, the first inductor 902 is connected to the bias 911 to apply a DC voltage to the circuit and to block the AC signal to prevent the leakage of the signal, the second inductor 909 is connected to the ground to leak the AC signal To prevent.

In addition, the PIN diodes 903, 905, 906, and 907 are alternately adjusted according to the voltage of the bias 911 to adjust the flow of the signal, but when the voltage of the bias 911 is set to positive (+), the PIN diode 903 is used. , 905 is turned on and the PIN diodes 906 and 907 are turned off. At this time, a small phase change occurs as a signal passes the reference transmission line 904 having a short length so that the phase is 180 °, 90 °, 45 °, 22.5 °, 11.25 °, or 5.625 ° ahead.

On the other hand, if the voltage of the bias 911 is set to negative (-), the PIN diodes 903 and 905 are turned off and the PIN diodes 906 and 907 are turned on. 908, a large phase change appears, causing the phase to lag 180 degrees, 90 degrees, 45 degrees, 22.5 degrees, 11.25 degrees, or 5.625 degrees.

As described above, the phase of the output signal may be relatively changed according to the difference between the transmission line lengths of the two, and the relationship between the length of the transmission line and the phase change is derived through Equation 6 below.

[Equation 6]

In this case, when the difference in the length of the transmission line is used, the phase difference continues to increase as the frequency increases, so that the phase shifter is implemented with a relatively simple circuit configuration with lower broadband characteristics than the circuits of the first to fourth embodiments described above. As a result, a small insertion loss can be achieved.

In addition, since the configuration of the fifth embodiment described above can derive all the desired phase shifts for all the center frequencies, the unit bit phase shifters of 180 °, 90 °, 45 °, 22.5 °, 11.25 °, and 5.625 ° respectively. It can be arranged continuously to implement a multiple bit phase shifter as shown in FIG.

In detail, FIG. 10 is a diagram showing a 4-bit phase shifter implemented by connecting the 180, 90, 45, and 22.5 ° phase shifters shown in FIG. 9 in series, and FIG. 11 is a 4-bit phase shift shown in FIG. FIG. 12 is a diagram illustrating a critical layout, and FIG. 12 is a diagram illustrating insertion loss and phase shift characteristic curves of a 4-bit phase shifter derived through ADS simulation based on a circuit designed as shown in FIGS. 10 and 11.

In addition to the four-bit phase shifter described above, a combination of circuits according to the first to fourth embodiments may implement a multi-bit phase shifter having 2 to 6 bits.

As described above and described with reference to a preferred embodiment for illustrating the technical idea of the present invention, the present invention is not limited to the configuration and operation as shown and described as such, it departs from the scope of the technical idea It will be apparent to those skilled in the art that many modifications and variations can be made to the present invention without this. Accordingly, all such suitable changes and modifications and equivalents should be considered to be within the scope of the present invention.

1 is a diagram showing a voltage-current characteristic curve of a PIN diode of a high frequency band high performance phase shifter circuit using a PIN diode according to the present invention.

2 is a diagram illustrating a high frequency band high performance phase shifter circuit using a PIN diode according to a first embodiment of the present invention;

3 is a diagram illustrating a high frequency band high performance phase shifter circuit using a PIN diode according to a second embodiment of the present invention;

4 is a diagram illustrating a high frequency band high performance phase shifter circuit using a PIN diode according to a third embodiment of the present invention;

5 is a diagram illustrating a high frequency band high performance phase shifter circuit using a PIN diode according to a fourth embodiment of the present invention;

6 shows a 180 ° phase shifter according to the first embodiment of the present invention, an 11.25 ° phase shifter according to the fourth embodiment, and a 22.5 °, 45 ° and 90 ° phase shifters according to the second embodiment in series. 5 bit phase shifter connected.

FIG. 7 shows a layout of the 5-bit phase shifter shown in FIG. 6; FIG.

FIG. 8 is a diagram illustrating insertion loss and phase shift characteristic curves of a 5-bit phase shifter derived through ADS simulation based on a circuit designed as shown in FIGS. 6 and 7.

9 is a diagram showing a high frequency band high performance phase shifter circuit using a PIN diode according to a fifth embodiment of the present invention;

FIG. 10 is a diagram illustrating a 4-bit phase shifter implemented by connecting the 180 °, 90 °, 45 °, and 22.5 ° phase shifters shown in FIG. 9 in series.

FIG. 11 shows a layout of the 4-bit phase shifter shown in FIG. 10; FIG.

12 is a diagram illustrating insertion loss and phase shift characteristic curves of a 4-bit phase shifter derived through ADS simulation based on a circuit designed as shown in FIGS. 10 and 11.

** Description of symbols for the main parts of the drawing **

201: input port 202: metal-insulator-metal capacitor

203 and 213: first inductor 204 and 212: bias

205 and 206: second inductor 207: first capacitor

208, 209, 210, 211: PIN diode 214: metal-insulator-metal capacitor

215: output port 216, 217: third inductor

218 and 219: second capacitor 220: fourth inductor

301: input port 302: metal-insulator-metal capacitor

303 and 309: third inductor 304 and 306: PIN diode

305: second inductor 307: metal-insulator-metal capacitor

308: output port 310: bias

311: first inductor 312: fourth inductor

313: metal-insulator-metal capacitor 314: PIN diode

401: input port 402, 405: second inductor

403 and 404: PIN diode 407: third inductor

408: bias 409: first inductor

410: fourth inductor 411: metal-insulator-metal capacitor

412: PIN diode

501: input port 502, 508: PIN diode

503 and 509 second inductor 504 third inductor

505: metal-insulator-metal capacitor 506: PIN diode

507: first inductor 510: output port

511: bias

601: input port 602: metal-insulator-metal capacitor

603 and 613: first inductor 604 and 612: first bias

605 and 606: second inductor 607: first capacitor

608, 609, 610, 611: PIN diode 614: metal-insulator-metal capacitor

616, 617: third inductor 618, 619: second capacitor

620: fourth inductor 621, 628: PIN diode

622, 629: fifth inductor 623: sixth inductor

624: metal-insulator-metal capacitor 625: seventh inductor

626: second bias 627: PIN diode

630: metal-insulator-metal capacitor 631, 635: eighth inductor

632, 634: PIN diode 633: ninth inductor

636: third bias 637: tenth inductor

638: eleventh inductor 639: metal-insulator-metal capacitor

640: PIN diode 641: metal-insulator-metal capacitor

642, 646: 12th inductor 643, 645: PIN diode

644: thirteenth inductor 647: fourth bias

648: 14th inductor 649: 15th inductor

650: metal-insulator-metal capacitor 651: PIN diode

652: metal-insulator-metal capacitor 654, 656: sixteenth inductor

655: seventeenth inductor 658: fifth bias

659: 18th inductor 660: 19th inductor

661: metal-insulator-metal capacitor 662: PIN diode

663: metal-insulator-metal capacitor 664: output port

901: input port 902: first inductor

903, 905, 906, 907: PIN diode 904: reference transmission line

908: phase shift transmission line 909: second inductor

910: output port 911: bias

1001: input port 1002: first inductor

1003: first bias 1004 to 1008: PIN diode

1005: first reference transmission line 1009: first phase shift transmission line

1010: second inductor 1011 to 1015: PIN diode

1012: second reference transmission line 1016: second phase shift transmission line

1017: third inductor 1018: second bias

1019: metal-insulator-metal capacitor 1020: fourth inductor

1021: third bias 1022, 1024 to 1026: PIN diode

1023: third reference transmission line 1027: third phase shift transmission line

1028: fifth inductor 1029, 1031-1033: PIN diode

1030: fourth reference transmission line 1034: phase shift transmission line

1035: sixth inductor 1036: fourth bias

1037: output port

Claims (15)

In the ultra-high frequency band high performance phase shifter circuit using a PIN diode, Metal-insulator-metal capacitors 202 and 214 connected to the input port 201 and the output port 215 to separate direct current voltage and current; Connected to the metal-insulator-metal capacitors 202 and 214 and connected to ground and grounded biases 204 and 212 for state control of the PIN diodes 208, 209, 210 and 211 to apply a DC voltage to the circuit. First inductors 203 and 231 for blocking the AC signal to prevent leakage of the signal; PIN diodes (208, 209, 210, 211) alternating according to the voltages of the bias (204, 212) to regulate the flow of signals; second inductors 205 and 206 for performing a function of a π-type high-pass filter to lead the phase of the signal received from the PIN diodes 208 and 210 by 90 °. One capacitor 207; Third inductors 216 and 217 which perform a function of a π-type low-pass filter to phase-lag the phase of the signal applied from the PIN diodes 209 and 211, and Two capacitors 218 and 219; And A fourth inductor 220 connected to the ground to block leakage of an AC signal applied from the third inductor 216 and 217 and the second capacitor 218 and 219; Ultra-high frequency band high performance phase shifter circuit using a PIN diode comprising a. The method of claim 1, The biases 204 and 212 are The voltage is set to positive to turn on the PIN diodes 208 and 209, and to turn off the PIN diodes 210 and 211, and the signal of the circuit is controlled by the second inductor 205 and 206 and the first capacitor ( 207) That is, a high frequency band high performance using a PIN diode, which passes through a high-pass filter of π to advance the phase of the signal passing through the PIN diodes 208 and 209 by 90 °. Phase shifter circuit. The method of claim 1, The biases 204 and 212 are The voltage is set to negative to turn off the PIN diodes 208 and 209, and the PIN diodes 210 and 211 are turned on, and the signal of the circuit is controlled by the third inductors 216 and 217. PIN diode, characterized in that the phase of the signal passing through the two capacitors (218, 219), i.e., a low-pass filter of the π passed through the PIN diodes (210, 211) 90 ° High Frequency Band High Performance Phase Shifter Circuit Using In the ultra-high frequency band high performance phase shifter circuit using a PIN diode, Metal-insulator-metal capacitors 302 and 307 connected to the input port 301 and the output port 308 to separate direct current voltage and current; A first inductor 311 connected to the bias 310 to apply a DC voltage to the circuit and block an AC signal to prevent leakage of the signal; A second inductor 305 connected to the ground to prevent leakage of an AC signal; PIN diodes (304, 306, 314) alternating according to the voltage of the bias (310) to regulate the flow of the signal; And a third inductor performing a function of a high-pass filter of the π type to lead the phase of the signal received from the PIN diodes 304 and 306 by 90 °, 45 °, or 22.5 °; 303, 309 and PIN diodes 304, 306; Ultra-high frequency band high-performance phase shifter circuit using a PIN diode comprising a. The method of claim 4, wherein The bias 310 is, By setting the voltage positive, the PIN diodes 304 and 306 are turned on and the PIN diode 314 is turned off, but no phase change occurs as the signal passes through the PIN diodes 304 and 306. , The fourth inductor 312 and the PIN diode 314 provided in the reverse direction to form a parallel resonance circuit (parallel resonance circuit) to prevent signal leakage to the ground connected to the ultra-high frequency band using the PIN diode High performance phase shifter circuit. The method of claim 4, wherein The bias 310 is, The voltage is set to negative to turn off the PIN diodes 304 and 306, and the PIN diode 314 is turned on, but the signal is generated by the third inductor 303 and 309, i.e. A high frequency band high performance phase shifter circuit using a PIN diode characterized by passing 90-, 45- or 22.5-degree phase leading through a high-pass filter. In the ultra-high frequency band high performance phase shifter circuit using a PIN diode, A first inductor 409 connected to the bias 408 to apply a DC voltage to the circuit and block an AC signal to prevent leakage of the signal; Second inductors 402 and 405 connected to ground to prevent leakage of AC signals; PIN diodes (403, 404, 412) alternating according to the voltage of the bias (408) to regulate the flow of the signal; And PIN diodes (403, 404) that pass the signal through the PIN diodes (403, 404) by performing the function of a T-type high-pass filter and advance the phase by 90, 45, or 22.5 degrees. ) And third inductor 407; Ultra-high frequency band high-performance phase shifter circuit using a PIN diode comprising a. The method of claim 7, wherein The bias 408 is, By setting the voltage to be positive, the PIN diodes 403 and 404 are turned on and the PIN diode 412 is turned off, but a phase change occurs as a signal of a circuit passes through the PIN diodes 403 and 404. By using the PIN inductor, the first inductor 409 and the PIN diode 412 provided in the reverse direction form a parallel resonance circuit, thereby preventing signal leakage to the ground. High frequency band high performance phase shifter circuit. The method of claim 7, wherein The bias 408 is, The voltage is set to negative (-) to turn off the PIN diodes 403 and 404, and the PIN diode 412 is turned on, and the signal of the circuit is the third inductor 407, that is, a T-type high pass filter A high frequency band high performance phase shifter circuit using a PIN diode characterized in that it passes 90 °, 45 ° or 22.5 ° phase leading through a high-pass filter. In the ultra-high frequency band high performance phase shifter circuit using a PIN diode, A first inductor 507 connected to the bias 511 to apply a DC voltage to the circuit and block an AC signal to prevent leakage of the signal; Second inductors 503 and 509 connected to ground to prevent leakage of AC signals; A metal-insulator-metal capacitor 505 connected to the input port 501 and the output port 510 to separate DC voltage and current at both ends thereof; PIN diodes (502, 508, 506) which are alternating according to the voltage of the bias (511) to regulate the flow of signals; A third inductor 504 for passing the signal and phase lagging the phase at 5.625 degrees or 2.8125 degrees; And A PIN diode 506 which passes a signal when the signal is switched in the reverse direction according to the voltage of the bias 511 and phases the phase by 5.625 ° or 2.8125 °; Ultra-high frequency band high-performance phase shifter circuit using a PIN diode comprising a. The method of claim 10, The bias 511 is, The voltage is set to positive to turn on the PIN diodes 506 and 508 and to turn off the PIN diode 502, but the signal passes through the third inductor 504 and the PIN diode 508 to be out of phase. A high frequency band high performance phase shifter circuit using a PIN diode characterized in that it is 5.625 degrees or 2.8125 degrees behind. The method of claim 10, The bias 511 is, The voltage is set to negative to turn off the PIN diodes 506 and 508, and to turn on the PIN diode 502, and the signal passes through the forward PIN diode 502 and the reverse PIN diode 506 to phase out. A high frequency band high performance phase shifter circuit using a PIN diode characterized in that 5.625 degrees or 2.8125 degrees ahead. In the ultra-high frequency band high performance phase shifter circuit using a PIN diode, A first inductor 902 connected to the bias 911 to apply a DC voltage to the circuit and block an AC signal to prevent leakage of the signal; A second inductor 909 connected to the ground to prevent leakage of an AC signal; And PIN diodes 903, 905, 906, and 907 that are alternately adjusted according to the voltage of the bias 911 to control the flow of signals; Ultra-high frequency band high-performance phase shifter circuit using a PIN diode comprising a. The method of claim 13, The bias 911 is, By setting the voltage positive, the PIN diodes 903 and 905 are turned on, and the PIN diodes 906 and 907 are turned off, and a small phase change occurs as the signal passes a short reference transmission line. A high frequency band high performance phase shifter circuit using a PIN diode characterized in that the 180 °, 90 °, 45 °, 22.5 °, 11.25 °, or 5.625 ° ahead. The method of claim 13, The bias 911 is, Setting the voltage to negative causes the PIN diodes 903 and 905 to turn off and the PIN diodes 906 and 907 to light up, and because of the large phase as the signal crosses the long length phase shift transmission line 908 A high frequency band high performance phase shifter circuit using a PIN diode, characterized in that the change occurs so that the phase lags 180 °, 90 °, 45 °, 22.5 °, 11.25 °, or 5.625 °.

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