KR101002317B1 - Trans-reflective liquid crystal display device and method for fabricating the same - Google Patents

Abstract

In order to provide a reflection type liquid crystal display device and a method for manufacturing the same, which can prevent pad electroforming even when a transparent conductive film is used as a pad terminal, such a reflection type liquid crystal display device includes a substrate; A plurality of gate lines and data lines intersecting the substrate to define a pixel area divided into a reflection area and a transmission area; A first gate pad formed at one end of the gate line and a second gate pad formed to be spaced apart from the first gate pad; a thin film transistor formed at an intersection of the gate line and the data line; A first data pad formed at one end of the data line and a second data pad spaced apart from the first data pad; A first contact hole exposing a spaced area between the first and second gate pads, a second contact hole exposing a spaced area between the first and second data pads, and a third portion exposing a part of the drain electrode of the thin film transistor; A protective layer having a contact hole and formed on the substrate including the thin film transistor; a gate pad terminal configured to connect the first and second gate pads spaced apart from each other through the first contact hole; A data pad terminal configured to connect the first and second data pads spaced apart from each other through the second contact hole; A transmissive electrode formed in the pixel region to contact the drain electrode of the thin film transistor through the third contact hole; A reflection electrode formed on the reflection area to have a transmission hole in one area of the transmission electrode; A first pad protection electrode and a second pad protection electrode formed to expose the gate pad terminals corresponding to the spaced regions between the first and second gate pads and to surround both sides of the gate pad terminals; And a third pad protection electrode and a fourth pad protection electrode which expose the data pad terminal corresponding to the separation area between the first and second data pads and surround both sides of the data pad terminal.

Gate pad terminal, data pad terminal, pad protection, reflection transmission

Description

Reflective type liquid crystal display device and manufacturing method thereof {TRANS-REFLECTIVE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME}

1 is an exploded perspective view showing a part of a general reflective transmissive liquid crystal display device

2 is a cross-sectional view of a typical reflective transmissive liquid crystal display device

3 is a plan view of a conventional transflective liquid crystal display device

4 is a structural cross-sectional view taken along line II ′, II-II ′ and III-III ′ of FIG. 3.

5 and 6 are structural cross-sectional views of a transflective liquid crystal display device according to another conventional technology.

7 and 8 are a plan view and a structural sectional view of a reflective transmissive liquid crystal display device according to an embodiment of the present invention.

9A to 9C are cross-sectional views of the process lines of the IV-IV ', V-V' and VI-VI 'lines of FIG.

Explanation of symbols on the main parts of the drawings

90 substrate 91 gate line

91a, 91b: first and second gate pads 91c: gate electrode
91d: Storage lower electrode 92: Gate insulating film
93: active layer 93a: ohmic contact layer
94: data lines 94a, 94b: first and second data pads 94c: source electrode 94c: drain electrode
94e: upper storage electrodes 95a and 95b: first and second passivation layers
95c: uneven pattern
96a, 96b, 96c, 96d: 1st, 2nd, 3rd, 4th contact hole

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97: transmitting electrode 98: transmitting hole

99: reflective electrode 100a: gate pad terminal

100b: data pad terminal

101a, 101b, 101c, and 101d: first, second, third and fourth pad protective electrodes

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device, and more particularly, to a reflection type liquid crystal display device and a method for manufacturing the same, which can selectively use a reflection mode and a transmission mode.

In general, a liquid crystal display device may be classified into a transmissive liquid crystal display device using a backlight as a light source and a reflective liquid crystal display device using natural light and artificial light without using the backlight as a light source.

In this case, the transmissive liquid crystal display uses a backlight as a light source to realize a bright image even in a dark external environment. However, there is a problem that can not be used in bright places, the power consumption is large.                         

On the other hand, since the reflective liquid crystal display does not use a backlight, power consumption can be reduced, but there is a limitation that it cannot be used when the external natural light is dark.

As an alternative to overcome these limitations, a reflective liquid crystal display device is provided.

Such a transflective liquid crystal display device has a function of a transmissive liquid crystal display device and a reflective liquid crystal display device by simultaneously providing a reflection unit and a transmissive unit in a unit pixel area, and includes backlight light and external natural light or artificial light. Since all light sources can be used, there is an advantage in that power consumption is reduced without being restricted by the surrounding environment.

On the other hand, the liquid crystal display devices constitute an additional storage capacitor to assist the charge holding ability of the liquid crystal.

Among the structures for forming the storage capacitor, the structure in which the capacitor is formed between the front gate wiring and the pixel electrode is called a storage on gate structure.

The storage capacitor maintains the voltage charged in the liquid crystal capacitor in the turn-off period of the corresponding thin film transistor.

Accordingly, leakage current is prevented from being generated through the liquid crystal capacitor in the turn-off period of the thin film transistor, and deterioration in image quality due to flicker is solved.

Hereinafter, a general reflective transmissive liquid crystal display device will be described with reference to the accompanying drawings.

FIG. 1 is an exploded perspective view showing a general reflective transmissive color liquid crystal display device.

As shown in FIG. 1, the general reflective transmissive liquid crystal display 11 includes a color filter 17 including a black matrix 16 and an upper substrate 15 having a transparent common electrode 13 formed on the color filter. The upper substrate 15 includes a pixel electrode 19 having a transmissive portion A and a reflecting portion C formed in the pixel region P, and a lower substrate 21 having a switching element T and array wiring formed thereon. ) And the lower substrate 21 are filled with the liquid crystal 23.

The lower substrate 21 is also referred to as a TFT array substrate, and the thin film transistor T, which is a switching element, is positioned in a matrix type, and includes a gate wiring 25 and a data wiring 27 passing through the plurality of thin film transistors. ) Is formed.

In this case, the pixel area P is an area where the gate line 25 and the data line 27 cross each other.

The operation characteristics of the reflective liquid crystal display device having such a configuration will be described with reference to FIG.

2 is a cross-sectional view showing a general reflective transmissive liquid crystal display device.

As shown in FIG. 2, the schematic reflection-transmissive liquid crystal display device 11 includes an upper substrate 15 having the common electrode 13 formed thereon, a reflection electrode 19b including a transmission hole A, and a transmission electrode 19a. ) A lower substrate 21 having a pixel electrode 19 formed of a pixel electrode, a liquid crystal 23 filled between the upper substrate 15 and the lower substrate 21, and a lower substrate 21 positioned below the lower substrate 21. The backlight 41 is comprised.                         

When the reflective liquid crystal display device 11 having such a configuration is used in a reflective mode, most of the light is used as an external natural light source or an artificial light source.

The operation of the liquid crystal display device in the reflection mode and the transmission mode will be described with reference to the above-described configuration.

In the reflective mode, the liquid crystal display uses an external natural or artificial light source, and the light B incident on the upper substrate 15 of the liquid crystal display is reflected by the reflective electrode 19b to reflect the light. Passes through the liquid crystal 23 arranged by the electric field of the electrode and the common electrode 13, the amount of light (B) passing through the liquid crystal is adjusted according to the arrangement of the liquid crystal 23 to display an image (image) Will be implemented.

On the contrary, when operating in the transmission mode, the light source uses the light F of the backlight 41 positioned below the lower substrate 21. Light emitted from the backlight 41 enters the liquid crystal 23 through the transparent electrode 19a and is arranged by an electric field of the transparent electrode 19a and the common electrode 13 below the through hole. By adjusting the amount of light incident from the lower backlight 41 by the liquid crystal 23 is implemented an image.

Hereinafter, a reflective liquid crystal display device and a method of manufacturing the same according to the related art will be described with reference to the accompanying drawings.

Generally, a liquid crystal display device includes a thin film transistor array substrate called a lower substrate, a color filter substrate called an upper substrate, and a liquid crystal formed between the two substrates. The following description relates to a thin film transistor array substrate which is a lower substrate.

Hereinafter, a reflective transmissive liquid crystal display device and a manufacturing method thereof will be described.

3 is a plan view of a conventional transflective liquid crystal display device, FIG. 4 is a structural cross-sectional view taken along lines II ′, II-II ′, and III-III ′ of FIG. 3. FIG. 5 and FIG. A cross-sectional view of a structure of a transflective liquid crystal display device according to another technique is shown.

The prior art is a reflective transmissive liquid crystal display device manufactured by applying an uneven pattern to a reflector. As illustrated in FIGS. 3 and 4, a gate pad 51a is formed in one region on a transparent substrate 50. The gate line 51 extends from the gate pad 51a and is arranged in parallel in one direction, and the gate electrode 51b protrudes from one side of the gate line 51, and is integrated with the front gate line. The storage lower electrode 51c is formed at the position.

A gate insulating film 52 is formed on the substrate 50 including the gate line 51, the gate electrode 51b, and the storage lower electrode 51c to electrically insulate the upper layer from the gate electrode 51b. An active layer 53 is formed on the upper gate insulating film 52.

At this time, the active layer 53 is composed of an amorphous silicon layer.

An ohmic contact layer 53a made of amorphous silicon doped is formed on the active layer 53 except for the channel region.                         

There is a data line 54 intersecting with the gate line 51 to define a pixel region. The source electrode 54b protrudes in one direction from the data line 54 and overlaps one side of the active layer 53. There is a drain electrode 54c spaced apart from the source electrode 54b and overlapping with the other side of the active layer 53.

The storage upper electrode 54d overlaps the upper storage lower electrode 51c formed at the front gate line.

A data pad 54a is formed at one end of the data line 54 to occupy a predetermined area.

The first passivation layer 55a and the second passivation layer 55b are formed on the entire surface of the substrate 50 including the drain electrode 54c and the storage upper electrode 54d.

In this case, the first and second passivation layers 55a and 55b are disposed on the gate pad 51a, the storage upper electrode 54d, the data pad 54a and the drain electrode 54c, respectively. Third and fourth contact holes 56a, 56b, 56c, and 56d are formed.

Convex and concave and convex patterns 55c (parts shown by circles in Fig. 3) are formed on the second passivation film 55b of the reflecting portion (pixel region except for the lower surface of the through hole 58). A transmissive electrode 57 is formed in the pixel region so as to contact the storage upper electrode 54d and the drain electrode 54b through the fourth contact holes 56b and 56d.

In addition, a reflective electrode 59 is formed in the pixel region so as to have the transmission hole 58 in one region of the transmission electrode 57. At this time, the reflective electrode 59 is formed with a bend by the uneven pattern 55c.                         

In this case, the reflective electrode 59 overlaps the data line 54 defining the pixel area at a predetermined interval.

The gate pad terminal 60a and the data pad terminal 60b are formed on the first and third contact holes 56a and 56c and the second passivation layer 55b adjacent thereto.

The reflection electrode 59 and the transmission electrode 57 are combined to form a pixel electrode.

In the reflection-transmissive liquid crystal display device having the above configuration, the gate pad portion and the data pad portion will be described as follows.

In the above-described conventional technology, a reflective material is formed on a transmissive material to be used as a gate pad terminal and a data pad terminal. The reflective electrode mainly uses aluminum metal, and the transmissive electrode mainly uses ITO. However, when the aluminum-based metal is in contact with ITO, galvanic corrosion occurs due to a potential difference, resulting in reliability problems such as pad transfer.

Next, in addition to the configuration of FIG. 4, the gate pad portion and the data pad portion may be formed in the structures shown in FIGS. 5 and 6, which will be described below. At this time, the pixel area is the same as that shown in FIG.

First, as shown in FIG. 5, the gate pad 51a may be formed in one region of the substrate 50, and the gate insulating layer 56 may have the first contact hole 56a in one region of the gate pad 51a. 52 and the first and second passivation layers 55a and 55b are sequentially deposited, and a gate pad terminal 61a is contacted on the first contact hole 56a and the second passivation layer 55b adjacent thereto.                         

In the data pad portion, a gate insulating film 52 is formed on the substrate 50, a data pad 55a is formed in one region, and a third contact hole 56c is formed in one region of the data pad 54a. The first and second passivation layers 55a and 55b are sequentially deposited so that the data pad terminal 61b is contacted on the third contact hole 56c and the second passivation layer 55b adjacent thereto.

As described above, FIG. 5 is a gate pad terminal having only a transparent material by removing the reflective material on the transparent material (ITO) in order to prevent corrosion problems between the transparent material (ITO) and the reflective material (aluminum metal) in FIG. 4. And a data pad terminal. However, when the reflective material on the transparent material is removed, voids are generated in the transparent material, and the gate metal under the eroded material is eroded, thereby causing contact resistance and reliability problems.

Next, in order to prevent the problem caused by the pad part of FIGS. 4 and 5, FIG. 6 shows that the gate pad terminal 62a and the data pad terminal 62b of the gate pad part and the data pad part are formed of a reflective material. Except for the prior art shown in FIG.

As shown in FIG. 6, when the pad terminal is formed of a reflective material, the transparent material (ITO) must be removed after the pad opening (contact hole formation) process. However, when the transparent material (ITO) is etched, etch damage occurs on the gate pad 51a and the data pad 54a, and when pad pads are formed of a reflective material made of aluminum-based metal, pad electroforming still occurs. there is a problem.

 The present invention has been made to solve the above problems, and an object of the present invention is to provide a reflection-transmissive liquid crystal display device and a method for manufacturing the same, which can prevent the pad electroplating even when using a transparent conductive film as a pad terminal. .

In the liquid crystal display device of the present invention for achieving the above object, in the liquid crystal display device in which each pixel region is defined as a reflection region and a transmission region, a plurality of gate lines and data lines are arranged to define the pixel region. and; A thin film transistor formed at an intersection of the gate line and the data line; A first gate pad formed at one end of the gate line; A second gate pad separated from the first gate pad; A first data pad formed at one end of the data line; A second data pad isolated from the first data pad; First and second sides of the first and second gate pads to expose one side and an upper portion thereof, one side between the first and second data pads and an upper portion thereof, and an upper portion of the drain electrode of the thin film transistor to be exposed. 2, a protective film formed with a third contact hole; A gate pad terminal configured to connect the first and second gate pads through the first contact hole; A data pad terminal configured to connect the first and second data pads through the second contact hole; A transmissive electrode formed in the pixel region to be connected to the drain electrode of the thin film transistor through the third contact hole; A reflection electrode formed on the reflection area to have a transmission hole in one area of the transmission electrode; And the first to fourth pad protection electrodes that expose the gate pad terminals and the data pad terminals of the first and second contact holes and surround both side surfaces of the gate pad terminal and the data pad terminal. .

Concave-convex pattern is formed on the upper portion of the protective film corresponding to the reflective region.

The reflective electrode is formed on the passivation layer having the uneven pattern to be curved.

The gate pad terminal and the data pad terminal may be formed of indium tin oxide (ITO), tin oxide (TO), indium zinc oxide (IZO), or indium tin zinc oxide (indium tin zinc oxide). It is characterized in that it is formed of a transparent conductive film such as (ITZO).

The first to fourth pad protection electrodes may be made of a reflective metal having a small resistance value such as aluminum (Al), an aluminum alloy, or Ag, and having excellent reflectance.

The protective film is formed of a first protective film made of a silicon nitride film and an organic insulating material made of benzocyclobuten (BCB) or photoacryl resin.

In the method of manufacturing a reflective transmissive liquid crystal display device having the above configuration, in the method of manufacturing a liquid crystal display device in which each pixel region is defined as a reflective region and a transmissive region, the gate electrodes are arranged in one line direction. Forming a gate line having a gate line; Forming a first gate pad at one end of the gate line and a second gate pad to be separated from the first gate pad; Forming a plurality of data lines intersecting the gate line to define a pixel region, a source electrode protruding from the data line, and a drain electrode spaced apart from the source electrode; Forming a first data pad at one end of the data line and a second data pad to be isolated from the first data pad; Forming a transmissive electrode in the pixel region in contact with the drain electrode; Forming a gate pad terminal and a data pad terminal to connect the first and second gate pads and the first and second data pads; Forming a reflective electrode on the reflective region to have a transmissive hole in one region of the transmissive electrode; And forming first and fourth pad protective electrodes to expose the gate pad terminal and the data pad terminal, and to surround both side surfaces of the gate pad terminal and the data pad terminal.

Sequentially depositing first and second passivation layers on the substrate on which the first and second data pads are formed; Patterning the second passivation layer using an embossing technique to form an uneven pattern in the reflective region; The first and second passivation layers may be etched to form a first contact hole on one side of the first and second gate pads and an upper portion thereof adjacent to the first and second protective pads, and on one side of the first and second data pads and an adjacent portion thereof. And forming a third contact hole and a third contact hole in the ordinary part of the drain electrode.

The first passivation layer is formed of a silicon nitride layer, and the second passivation layer is formed by coating one selected from the group of organic insulating materials including benzocyclobuten (BCB), photoacryl resin, and the like. It is characterized by.

The gate pad terminal and the data pad terminal may be formed of indium tin oxide (ITO), tin oxide (TO), indium zinc oxide (IZO), or indium tin zinc oxide (indium tin zinc oxide). It is characterized by forming a patterned by depositing a transparent conductive film such as (ITZO).

The reflective metal and the first to fourth pad protective electrodes may be formed by depositing and patterning a reflective metal having a low resistance value such as aluminum (Al), an aluminum alloy, or Ag and having excellent reflectance.

Hereinafter, a reflective transmissive liquid crystal display device and a manufacturing method thereof according to an exemplary embodiment of the present invention will be described with reference to the accompanying drawings.

First, the configuration of a reflective transmissive liquid crystal display device according to an embodiment of the present invention will be described.

7 and 8 are a plan view and a structural cross-sectional view of a reflective transmissive liquid crystal display device according to an embodiment of the present invention.

In the reflective liquid crystal display according to the exemplary embodiment of the present invention, an uneven pattern is formed in the reflecting portion, and as shown in FIGS. 7 and 8, the gate line is parallel to one region on the transparent substrate 90 in one direction. 91 are arranged, a first gate pad 91a is formed at an end of the gate line 91, and a second gate pad 91b is formed to be isolated from the first gate pad 91a. The gate electrode 91c protrudes from one side of the gate line 91, and the storage lower electrode 91d is formed at the storage capacitor as an integral part of the front gate line.

A gate insulating film 92 is formed on the substrate 90 including the gate line 91, the gate electrode 91c, and the storage lower electrode 91d to electrically insulate the upper layer from the gate electrode 91c. An active layer 93 is formed on the upper gate insulating film 92.

At this time, the active layer 93 is composed of an amorphous silicon layer.

An ohmic contact layer 93a made of amorphous silicon doped is formed on the active layer 93 except for the channel region.

There is a data line 94 formed to cross the gate line 91 to define a pixel region. The source electrode 94c protrudes in one direction from the data line 94 and overlaps one side of the active layer 93. There is a drain electrode 94d spaced apart from the source electrode 94c and overlapping with the other side of the active layer 93.

The storage upper electrode 94e overlaps the upper storage lower electrode 91d formed at the front gate line.

A first data pad 94a is formed at one end of the data line 94, and is isolated from the first data pad 94a to form a second data pad 94b.

The first passivation layer 95a and the second passivation layer 95b are formed on the entire surface of the substrate 90 including the drain electrode 94d and the storage upper electrode 94e.

The first passivation layer 95a is formed of a silicon nitride film, and the second passivation layer 95b is selected from the group of organic insulating materials including benzocyclobuten (BCB), photoacryl resin, and the like. It is formed as one.

In this case, the first and second passivation layers 95a and 95b may have a first contact hole 96a and a storage upper electrode 94e to expose one side surface between the first and second gate pads 91a and 91b and an upper portion adjacent thereto. The second contact hole (not shown), one side between the first and second data pads 94a and 94b and the upper portion adjacent to the upper portion of the third contact hole 96c and the drain electrode 94d are exposed. Fourth contact holes (not shown) are formed in the upper portion, respectively.

Convex and concave patterns 95c (parts shown by circles in FIG. 7) are formed convexly on the second passivation film 95b of the reflecting portion (pixel region excluding the through hole), and the second and fourth contact holes ( The transmissive electrode 97 is formed in the pixel area so as to contact the storage upper electrode 94e and the drain electrode 94c through the not shown or not illustrated.

The reflective electrode 99 is formed in the pixel region so as to have the transmission hole 98 in one region of the transmission electrode 97. At this time, the reflective electrode 99 is formed with a bend by the uneven pattern 95c.

In this case, the reflective electrode 99 overlaps the data line 94 defining the pixel area at a predetermined interval. The reflective electrode 99 and the transmission electrode 97 are combined to form a pixel electrode.

The gate pad terminal 100a is formed on the first contact hole 96a and the second passivation layer 95b adjacent thereto to connect the first and second gate pads 91a and 91b. First and second pad protective electrodes 101a and 101b to surround upper portions of both sides of the gate pad terminal 100a on both sides of the first contact hole 96a to expose the gate pad terminal 100a below the first contact hole 96a. ) Is formed.

The data pad terminal 100b is formed on the third contact hole 96c and the second passivation layer 95b adjacent thereto to connect the first and second data pads 94a and 94b. The third and fourth pad protective electrodes 101c to surround upper portions of both sides of the data pad terminals 100b on both sides of the third contact hole 96c so that the data pad terminals 100b below the third contact holes 96c are exposed. 101d) is formed.

The gate pad terminal 100a and the data pad terminal 100b may be formed of indium tin oxide (ITO), tin oxide (TO), indium zinc oxide (IZO), or indium tin zinc. It is formed of a transparent conductive film such as oxide (Indium Tin Zinc Oxide: ITZO).

In addition, the first and second pad protection electrodes 101a and 101b and the third and fourth pad protection electrodes 101c and 101d are reflective metals having low reflectivity and excellent reflectivity such as aluminum (Al), aluminum alloy or Ag. Consists of.

In the above description, the exposed gate pad terminals 100a and the data pad terminals 100b of the first and third contact holes 96a and 96c are portions for tab bonding.

As described above, in order to expose the portion for tap bonding, the reflective metal on the gate pad terminal 100a and the data pad terminal 100b should be removed. In this case, the first and second signals for applying the signal to the gate line and the data line are removed. Since the gate pads 91a and 91b and the first and second data pads 94a and 94b are not affected by the gate pads 91a and 91b, damage may be prevented.                     

In the above, the protective film may be formed of only one layer using a silicon nitride film.

Next, a method of manufacturing a reflection transmissive liquid crystal display device according to an embodiment of the present invention having the above configuration will be described.

9A to 9C are cross-sectional views of the process lines of FIG. 7 taken along lines IV-IV ', V-V', and VI-VI 'of FIG.

According to an exemplary embodiment of the present invention, a method of manufacturing a reflective transmissive liquid crystal display device may include aluminum (Al), molybdenum (Mo), tungsten (W), which are conductive metals, on a transparent substrate 90, as shown in FIG. 9A. Other conductive alloys are deposited and patterned to isolate the gate lines 91 arranged in one direction, the first gate pad 91a formed at one end of the gate line 91, and the first gate pad 91a. The second gate pad 91b and the gate electrode 91c protruding from one side of the gate line 91 are formed.

While forming the gate line 91, a storage lower electrode 91d is formed in the storage capacitor region of the front gate line.

Next, an insulating material such as a silicon oxide film (SiO 2) or a silicon nitride film (SiN x) is deposited on the entire surface of the substrate 90 on which the gate line 91 is formed, and the amorphous silicon containing amorphous silicon (a-Si) and impurities is successively deposited. Is deposited to form a first insulating layer and a semiconductor layer (amorphous silicon + impurity amorphous silicon).

Thereafter, the semiconductor layer is patterned to form a semiconductor pattern in an island shape on the gate electrode 91c.

A conductive metal such as molybdenum (Mo), tungsten (W), or chromium (Cr) is deposited and patterned on the entire surface of the substrate 90 on which the semiconductor pattern is formed.

The patterning process is performed to form a data line 94 so as to intersect with the gate line 91 with the first insulating layer therebetween, and to protrude from one side of the data line 94 to overlap one side of the semiconductor pattern. A source electrode 94c is formed, and a drain electrode 94d is formed to be spaced apart from the source electrode 94c by a predetermined interval and overlap the other side of the semiconductor pattern. The drain electrode 94d is spaced apart from the drain electrode 94d. The storage upper electrode 94e is formed on the storage lower electrode 91d.

The first data pad 94a is formed to have a predetermined area at one end of the data line 94, and the second data pad 94b is formed to be isolated from the first data pad 94a.

Subsequently, an amorphous silicon layer doped with the source electrode 94c and the drain electrode 94d as a mask is etched to form an active layer 93 formed of an amorphous silicon layer in the semiconductor pattern, and an active layer except for a channel region. An ohmic contact layer 93a formed of a doped amorphous silicon layer is formed on 93.

Next, as shown in FIG. 9B, first and second passivation layers 95a and 95b are sequentially deposited on the entire surface of the substrate 90 on which the source electrode 94c and the drain electrode 94d are formed.

The first passivation layer 95a is formed of a silicon nitride film, and the second passivation layer 95b is a group of organic insulating materials including benzocyclobuten (BCB), photoacryl resin, and the like. The selected one is applied and formed. Subsequently, the second passivation layer 95b is patterned using an embossing technique to form the uneven pattern 95c in a portion corresponding to the reflecting portion.

Subsequently, the first and second passivation layers 95a and 95b and the gate insulating layer 92 are etched to form a first contact hole 96a on one side of the first and second gate pads 91a and 91b and an upper portion adjacent thereto. And a third contact hole 96b at a daily portion of the storage upper electrode 94e, a third contact hole 96c at an upper surface adjacent to and adjacent to one side between the first and second data pads 94a and 94b. Fourth contact holes 96d are formed in the daily portions of the drain electrode 94d, respectively.

Subsequently, as shown in FIG. 9C, a transparent conductive film is deposited on the second protective film 95b including the first, second, third, and fourth contact holes 96a, 96b, 96c, and 96d, and the transparent conductive film is deposited. By selectively etching, a transmissive electrode 97 is formed in the pixel region so as to contact the drain electrode 94d and the storage upper electrode 94d formed on the front gate line, and the first contact hole 96a and the adjacent first contact hole 96a are formed. A gate pad terminal 100a is formed on the second passivation layer 95b to connect the first and second gate pads 91a and 91b, and is formed on the third contact hole 96c and the second passivation layer 95b adjacent thereto. The data pad terminals 100b are formed to connect the first and second data pads 94a and 94b to each other.

The transparent conductive film may use indium tin oxide (ITO), tin oxide (TO), indium zinc oxide (IZO), or indium tin zinc oxide (ITZO). have.

Subsequently, after depositing a reflective metal having a low resistance value such as aluminum (Al), an aluminum alloy, or Ag and having excellent reflectivity on the front surface of the substrate 90, a region of the transmissive electrode 97 is exposed to expose a transmissive hole ( The reflective electrode 99 is formed in the reflective region so as to have 98.

At the same time as forming the reflective electrode 99, the gate pad terminal 100a beneath the first contact hole 96a is exposed to cover the both sides of the gate pad terminal 100a of the first contact hole 96a. The second pad protection electrodes 101a and 101b are formed, and at the same time, the data pad terminal 100b beneath the third contact hole 96c is exposed and the data pad terminal 100b of the third contact hole 96c is exposed. The third and fourth pad protective electrodes 101c and 101d are formed to surround both sides.

As a result, the gate pad terminal 100a and the data pad terminal 100b where the tab bonding is to be formed are exposed, and the first and second gate / data pads include the first to fourth pad protective electrodes 101a, 101b, 101c, Protected by 101d).

In other words, the first and second pad protection electrodes 101a and 101b and the third and fourth pad protection electrodes 101c and 101d are substantially the first and second gate pads 91a and 91b to which the gate and data signals are applied. ) And remain on top of the first and second data pads 94a and 94b to act as a protective film, so that when the reflective metal on the gate pad terminal 100a and the data pad terminal 100b is etched, the etchant serves as a transparent conductive layer. Even though pin holes are formed in the formed gate pad terminal 100a and the data pad terminal 100b, the etchant may form the first and second gate pads 91a and 91b and the first and second data pads 94a and 94b. ), So that no damage can occur.

Those skilled in the art will appreciate that various changes and modifications can be made without departing from the spirit of the present invention.                     

Therefore, the technical scope of the present invention should not be limited to the contents described in the above embodiments, but should be defined by the claims.

The reflection-transmissive liquid crystal display device and a method of manufacturing the same of the present invention as described above have the following effects.

As described above, in order to expose the portion for tap bonding, the reflective metal on the gate pad terminal 100a and the data pad terminal 100b must be removed. In this case, the first and second signals for applying the signal to the gate line and the data line Since the gate pads 91a and 91b and the first and second data pads 94a and 94b are protected by the first to fourth pad protection electrodes 101a, 101b, 101c, and 101d, the etchant is first and second. It does not penetrate into the second gate pads 91a and 91b and the first and second data pads 94a and 94b. Therefore, it is possible to prevent damage caused by pad propagation.

Claims (11)

Board; A plurality of gate lines and data lines intersecting the substrate to define a pixel area divided into a reflection area and a transmission area; A first gate pad formed at one end of the gate line and a second gate pad formed to be spaced apart from the first gate pad; A thin film transistor formed at an intersection of the gate line and the data line; A first data pad formed at one end of the data line and a second data pad spaced apart from the first data pad; A first contact hole exposing a spaced area between the first and second gate pads, a second contact hole exposing a spaced area between the first and second data pads, and a third portion exposing a part of the drain electrode of the thin film transistor; A protective film having a contact hole and formed on the substrate including the thin film transistor; A gate pad terminal configured to connect the first and second gate pads spaced apart from each other through the first contact hole; A data pad terminal configured to connect the first and second data pads spaced apart from each other through the second contact hole; A transmissive electrode formed in the pixel region to contact the drain electrode of the thin film transistor through the third contact hole; A reflection electrode formed on the reflection area to have a transmission hole in one area of the transmission electrode; A first pad protection electrode and a second pad protection electrode formed to expose the gate pad terminals corresponding to the spaced regions between the first and second gate pads and to surround both sides of the gate pad terminals; And And a third pad protection electrode and a fourth pad protection electrode formed to expose the data pad terminals corresponding to the spaced areas between the first and second data pads and to surround both sides of the data pad terminals. Reflective type liquid crystal display device. The method of claim 1, And a concave-convex pattern is formed on the passivation layer corresponding to the reflective region. The method of claim 1, And the reflective electrode is formed on the passivation layer having a concave-convex pattern and is curved. The method of claim 1, The gate pad terminal and the data pad terminal may be formed of indium tin oxide (ITO), tin oxide (TO), indium zinc oxide (IZO), or indium tin zinc oxide (indium tin zinc oxide). Reflective type liquid crystal display device, characterized in that formed of a transparent conductive film such as (ITZO). The method of claim 1, And the first to fourth pad protection electrodes are made of a metal selected from aluminum (Al), aluminum alloy or Ag. The method of claim 1, The protective film is a reflective liquid crystal display device comprising a first protective film made of a silicon nitride film and an organic insulating material made of benzocyclobuten (BCB) or photoacryl resin. Forming a plurality of gate lines each pixel region arranged in one direction on a substrate defined by a reflection region and a transmission region; Forming a first gate pad and a second gate pad spaced apart from the first gate pad at one end of the gate line; Forming a plurality of data lines intersecting the gate line to define a pixel area divided into a reflection area and a transmission area, a source electrode protruding from the data line, and a drain electrode spaced apart from the source electrode; Forming a first data pad at one end of the data line and a second data pad spaced apart from the first data pad; A first contact hole exposing a spaced area between the first and second gate pads, a second contact hole exposing a spaced area between the first and second data pads, and the thin film on the substrate including the thin film transistor; Forming a protective film having a third contact hole exposing a portion of the drain electrode of the transistor; Forming a transmissive electrode in the pixel region in contact with the drain electrode through the third contact hole; Forming a gate pad terminal connecting the first and second gate pads spaced apart from each other through the first contact hole; Forming a data pad terminal connecting the first and second data pads spaced apart from each other through the second contact hole; Forming a reflective electrode on the reflective region to have a transmissive hole in one region of the transmissive electrode; Forming a first pad protection electrode and a second pad protection electrode to expose the gate pad terminals corresponding to the spaced regions between the first and second gate pads and to surround both sides of the gate pad terminals; And And forming a third pad protection electrode and a fourth pad protection electrode to expose the data pad terminals corresponding to the separation areas between the first and second data pads and to surround both sides of the data pad terminals. A method of manufacturing a reflective transmissive liquid crystal display device. The method of claim 7, wherein In the forming of the protective film, the first and second protective films are sequentially deposited. And forming a concave-convex pattern in the reflective region by patterning the second passivation layer using an embossing technique. The method of claim 8, The first passivation layer is formed of a silicon nitride layer, and the second passivation layer is formed by coating one selected from the group of organic insulating materials including benzocyclobuten (BCB), photoacryl resin, and the like. A method of manufacturing a reflective transmissive liquid crystal display device. The method of claim 7, wherein The gate pad terminal and the data pad terminal may be formed of indium tin oxide (ITO), tin oxide (TO), indium zinc oxide (IZO) or indium tin zinc oxide (indium tin zinc oxide). A method for manufacturing a reflection-transmissive liquid crystal display device, characterized in that it is formed by depositing and patterning a transparent conductive film such as: ITZO. The method of claim 7, wherein And the reflective metal and the first to fourth pad protective electrodes are formed by depositing and patterning a metal selected from aluminum (Al), an aluminum alloy, or Ag.

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