KR100997743B1 - Recovery method of organic solvent from photoresist removal waste - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for recovering an organic solvent from a waste liquid used to remove unnecessary photoresist from an edge or peripheral device of a substrate in the manufacture of a semiconductor or liquid crystal display, and solid-liquid phase separation by adding an aqueous alkali solution to the waste liquid. It relates to a method for recovering the organic solvent from the waste liquid for removing photoresist comprising the step of, and distilling the separated liquid phase.

According to the present invention, an excellent effect of purifying and recovering high-purity organic solvents, particularly high-purity propylene glycol monomethyl ether acetate (PGMEA), may be obtained from the waste solution generated during the manufacture of semiconductors or liquid crystal displays.

Waste solution, organic solvent, recovery, aqueous alkali solution, solid-liquid phase separation, distillation

Description

Recovery method of organic solvent from waste liquid for removing photoresist {RECOVERY METHOD OF ORGANIC SOLVENT FROM PHOTORESIST REMOVAL WASTE}

The present invention relates to a method for recovering an organic solvent from a waste liquid, and more particularly, to remove various impurities contained in waste liquid generated in a liquid crystal display device manufacturing process such as a semiconductor and a TFT-LCD, and to reuse them in a display manufacturing process. It relates to a recovery method of an organic solvent.

In order to selectively etch a metal film used in a wiring forming process of a semiconductor or a display device (TFT-LCD, PDP, OLED, etc.), a photolithography lithography process is performed.

In particular, when the photolithography process is generally subdivided in a display device, a glass having a metal film which has been cleaned is strongly vacuumed at a lower portion of the glass so that there is no detachment of the glass in a spin coating machine. In general, the rotational speed rotates at 2500 ~ 4500 rpm, and the larger the size of the glass, the stronger the centrifugal force and the breakage in the center of the glass may cause damage to the glass and equipment.

When a certain amount of photoresist is dropped on the glass to which rotational force is applied, the liquid flows outward from the center by centrifugal force, and a coating is formed on the metal film in a certain thickness. At this time, the coating thickness of the center and the coating thickness of the edge (edge) or the peripheral portion is different by the difference in the viscosity or rotational force of the photoresist. Therefore, in general, the edge portion is a structure in which no metal wiring exists and a photoresist having a thick thickness exists.

This portion of the photoresist may cause defects in the subsequent photoresist application process and must be removed. The chemicals used to remove the thick photoresist at these edges are called EBR thinners in particular, and the EBR thinners are basically composed of organic solvents. Particles, metals, moisture or other organic solvents are mixed together from the environment.

Conventionally, the waste solution contaminated with impurities cannot be recycled and used, but a method of incineration and disposal has been used. However, in order to improve process efficiency and reduce costs, the waste solution containing impurities is recycled to remove the photoresist. There is a demand for the development of reusable technologies.

In order to recover the desired organic solvent from the waste liquid, the photoresist component needs to be separated and removed. Here, the photoresist is composed of a polymer material and other additives, and these are solid substances dissolved or dispersed in the organic solvent. Therefore, in order to recover the organic solvent from the waste liquid containing impurities, a technique for separating the solid photoresist and the liquid organic solvent is required.

In particular, when recovering the organic solvent, not only the photoresist component but also the metal ion component in the organic solvent should be removed. This is because the metal ion component included in the organic solvent may cause a problem such as an electrical short circuit by contaminating a fine circuit board when the organic solvent is reused in a semiconductor and display device manufacturing process.

Moreover, general industrial organic solvents contain very fine particles therein. These fine particles, when used in the electronics industry, can cause large defects due to the fine particles in organic solvents remaining in the electronic circuits. Management is required. These microparticles are presumed to be mainly in the form of inorganic substances or in the form of organic substances which are insoluble in the organic solvent, but should be removed at a very low level regardless of their kind.

Therefore, research is needed to develop a process for recovering organic solvents with high purity to effectively remove photoresist, metal ions and fine particles contained in the waste liquid and re-introduce them into the process.

An object of the present invention is to provide a method for effectively removing photoresist, metal ions, and fine particles from a waste solution generated in a semiconductor or liquid crystal display manufacturing process and recovering a high purity organic solvent.

The present invention relates to a method for recovering an organic solvent from a waste liquid used to remove unnecessary photoresist from an edge or peripheral device of a substrate in the manufacture of a semiconductor or liquid crystal display, wherein an aqueous alkaline solution is added to the waste liquid to prevent solid-liquid phase separation. It provides a method for recovering the organic solvent from the waste liquid for removing photoresist comprising the step of performing, and distilling the separated liquid phase.

Hereinafter, the present invention will be described in more detail.

The present invention provides an aqueous solid solution by adding an aqueous alkali solution to the waste solution so as to streamline the organic solvent recovery process in the waste liquid generated during the manufacture of semiconductors or liquid crystal displays, and to effectively remove the photoresist, metal ions and fine particles contained in the waste liquid. Liquid phase separation, and distilling the separated liquid phase.

In particular, the present invention can obtain a very excellent effect in the purification and recovery of high-purity organic solvent, that is, high purity propylene glycol monomethyl ether acetate (PGMEA).

Hereinafter, with reference to the accompanying drawings, it will be described in detail the organic solvent recovery process of the present invention to be easily carried out by those of ordinary skill in the art.

As shown in FIG. 1, in the process of recovering the organic solvent from the waste liquid of the present invention, solid-liquid phase separation is performed through a reactor 100 in which an alkaline aqueous solution is added to the waste liquid. Consists of distillation.

In more detail, the distillation process of the present invention may supply a predetermined amount to the temperature raising tank 104 by using a storage tank 101 tank for storing or supplying a liquid phase separated by adding an aqueous alkali solution. In addition, the transfer pump 102 may use a metering pump as a pump for supplying a predetermined amount of raw material to the temperature rising tank 104. The temperature rise tank 104 serves to circulate the entire chemical liquid in order to equalize the chemical liquid in the stripping stage by the circulation pump 103 and the liquid in the storage tank 101, and the heat exchanger 106 The waste liquid (EBR Thinner) can be supplied to the distillation column 107 through. In addition, the reactor 110 and the heat exchangers 111, 112, and 113 may be additionally used to selectively separate the heat exchangers 108 and 109 for liquefying the recovered high purity organic solvent gas. The high purity organic solvent finally recovered through such a process is stored in the storage tank 114.

In addition, in the present invention, the step of reacting the waste liquid with the aqueous alkali solution, as shown in Figure 2, the steam jacket 201 for injecting steam and cooling water into the alkaline aqueous reactor tank 200, including a photoresist and the like through the reaction A drain line 202 for discharging the residue of the solid phase to the outside, and a discharge line 203 for effectively discharging the supernatant mainly composed of the organic solvent through the solid-liquid phase separation. By discharging the supernatant from the top in the reactor (100, 200) sequentially, the discharge line 203 is configured in multiple stages so that the supernatant of the organic solvent can be discharged without mixing the residue of the solid phase including the photoresist as much as possible. The discharge line 203 may be installed at a quarter or more of the height of the entire reactor tank 200 in terms of the phase separation effect.

The present invention is applicable to all waste liquids used to remove unnecessary photoresist from the edges or peripherals of substrates in the manufacture of semiconductors or liquid crystal displays, and particularly for waste liquids comprising an EBR Thinner Remover Thinner. Can be used.

In the present invention, the solid-liquid phase separation step of adding an aqueous alkali solution to the waste liquid is carried out after the temperature is raised to 90 to 130 ℃, preferably 100 to 135 ℃, more preferably 110 to 120 ℃, 20 to 40 ℃, preferably Can be carried out by cooling to 25 to 35 ℃, more preferably 25 to 30 ℃. The reaction temperature of the step is preferably at least 90 ℃ in terms of supplying a sufficient heat source to sufficiently occur coprecipitation phenomenon, the reaction temperature is preferably 130 ℃ or less to prevent the sudden evaporation of moisture.

In addition, the temperature increase rate of the reaction step is preferably a gradual multi-stage heat source supply form, more preferably a rapid heat source supply is effective up to 90 ℃ and heat source supply from 90 ℃ to 130 ℃ 1 ~ 3 ℃ / min. It can be done to achieve a moderate temperature rise. It is preferable to perform the cooling rate after the temperature increase as fast as possible in terms of phase separation effect, and to hinder phase separation such as stirring.

The aqueous alkali solution added to the waste liquid in the present invention can be used as long as the pH of the entire reaction solution is 10 or more, preferably 11 or more, and is not limited to specific components. Preferably, one or more hydroxides, carbonates, phosphates, and ammonia and amines of alkali or alkaline earth metals may be used, and more preferably, NaOH, KOH, Na ₂ CO ₃ , ammonia, and monoethanolamine. One or more selected from the group consisting of can be used. Among them, NaOH or KOH is more preferable in view of strong alkali coprecipitation effect.

In addition, the alkaline aqueous solution may be added in an amount of 15 to 25 parts by weight based on 100 parts by weight of the reacted waste solution. The aqueous alkali solution is preferably added in an amount of 15 parts by weight or more in terms of pH control, and preferably added in an amount of 25 parts by weight or less in terms of preventing the progress of a high viscosity state of the solution and economics.

Meanwhile, the present invention applies a distillation process as shown in FIG. 1 to the liquid phase separated through the solid-liquid phase separation.

The distillation process may be preferably performed at a pressure of 740 mmHg or less, more preferably 730 to 740 mmHg, and various organic solvents included in the waste liquid for removing photoresist have a characteristic of having a rather high boiling point. In the case of distillation by heating to the boiling point, it is preferable to distill it under reduced pressure to 740 mmHg or less, and preferably at least 730 mmHg in terms of overall process cost and efficiency of recovery performance.

In addition, the distillation step is carried out at a temperature of 35 to 40 ℃, preferably 36 to 39.5 ℃, more preferably 37.0 to 39.0 ℃, based on the boiling point (bp) temperature of the organic solvent to be purified, such as PGMEA It is preferable to perform the distillation process in the above temperature range in terms of the condition range corresponding to the reduced pressure condition.

The distillation process is a reflux of the distillation column to recover the high-purity organic solvent, particularly high-purity propylene glycol monomethyl ether acetate (PGMEA) from the liquid supernatant from which the resist residue is separated by alkaline aqueous solution treatment. The stage may be performed at 50 or more stages, preferably at least 70 stages, more preferably at least 100 stages, for example, at a high stage of about 50 to 250 stages.

The distillation process of the present invention can be carried out using a tray apparatus as shown in FIG. 3. In particular, as the gas-liquid contact mechanism portion of the tray stage, a sieve type as shown in FIGS. 4A to 4D, a reflow type, and a bubble cap type as shown in FIG. 4C. ) Or a ballast type (FIG. 4D) may be used. Among these tray apparatuses, it is more preferable to use a bubble cap type from the viewpoint of distillation process efficiency, particularly high purity purification efficiency optimized for the organic solvent to be purified in the present invention.

The recovery process of the present invention may be carried out by repeating the alkali aqueous solution treatment step and the distillation step two or more times as necessary, respectively, and may also be performed by adding a filtration step of the organic solvent in a conventional range.

In the case of an organic solvent used in the electronic industry such as a semiconductor and a liquid crystal display, when an organic solvent containing a large amount of fine particles is used, product defects are caused and product productivity is greatly reduced. As described above, the present invention proposes a method for efficiently removing the fine particles contained in the waste liquid used for removing the photoresist and recovering a high purity organic solvent, so that the organic solvent recovered according to the present invention can be used in the electronic industry. You can do it.

Recovery process according to an embodiment of the present invention as described above can be applied to the waste liquid containing a variety of organic solvents, in particular, high-purity propylene from waste liquid containing propylene glycol monomethyl ether acetate (PGMEA) The glycol monomethyl ether acetate may be applied by the process of purifying and recovering.

The present invention also provides propylene glycol monomethyl ether (Propylene glycol monomethyl ether, PGME), cyclohexanone, propanoic acid, diethylene glycol monoethyl ether in addition to the propylene glycol monomethyl ether acetate. ether, EDG), diethylene glycol dimethyl ether (DMG), and acetone can be effectively applied to a waste solution containing at least one organic solvent selected from the group consisting of.

In particular, in the present invention, the organic solvent recovered after the distillation step as described above is preferably purified to include the entire solution of propylene glycol monomethyl ether acetate (PGMEA), but the actual process In about 95 parts by weight, preferably at least 99 parts by weight, more preferably 99.5 or more, for example, about 95 to 99.9 parts by weight based on 100 parts by weight of the solution is characterized in that the purification with high purity.

In addition, although it is preferable that there is no residual content of the photoresist solid content, the said organic solvent collect | recovered can be contained in 0 to 0.01 weight part with respect to 100 weight part of organic solvents in an actual process.

It is preferable that the organic solvent recovered after the distillation step is free from any residual metal components. However, in the actual process, the organic solvent may include 0 to 100 ppb for each metal component.

In the present invention, matters other than those described above can be added or subtracted as required, and therefore, the present invention is not particularly limited thereto.

The present invention performs a solid-liquid phase separation process by adding an alkali aqueous solution to the waste liquid generated in the semiconductor or liquid crystal display manufacturing process, and optimize the distillation process, more effectively the photoresist, metal ions, and fine particles contained in the waste liquid Residues such as these can be removed, and metal ions and the like contained in the organic solvent can also be easily removed to recover the organic solvent of high purity more efficiently.

In particular, the present invention can effectively recover and recover high-purity propylene glycol monomethyl ether acetate from the waste liquid.

Hereinafter, the present invention will be described in more detail with reference to the following examples. However, the scope of the present invention is not limited to the following examples.

In order to find out the foreign matter removal efficiency and high purity purification performance of the organic solvent recovery process according to the present invention, the experiment was conducted on waste liquids A and B used for removing photoresist in the display manufacturing process. Here, the components contained in the waste liquids A and B are as shown in Table 1 below, and the unit is weight percent.

division Waste A Waste fluid B moisture 0.6 0.59 Organic solvent PGMEA 89.7 89.4 Propionic acid 4.38 4.04 EDG 1.20 1.05 DMG 2.55 2.94 Photoresist content 3.95 11.24 Photoresist Type Posi pr Posi pr

In Table 1, PGMEA stands for propylene glycol monomethyl ether acetate, EDG stands for diethylene glycol monoethyl ether, and DMG stands for diethylene glycol dimethyl ether.

Example  1-28

In the process conditions as shown in Table 1, in the reactor tank 200 of Figure 2, the waste solution A, B to add the aqueous alkali solution of KOH or NaOH to the waste solution A, B, and then heated to cool to perform a solid-liquid phase separation, discharge line The liquid supernatant separated through 203 was once discharged into the tank 101. In addition, the separated solid residue was discharged to the outside through the drain line 202.

The separated liquid phase stored in the storage tank 101 was supplied to the distillation tower 107 to perform a distillation process and liquefied the recovered high purity organic solvent and stored in the storage 114.

Example No. Waste Alkaline aqueous solution treatment process Distillation process alkali
ingredient Addition amount
(Parts by weight) Temperature rise
(℃) Cooling temperature
(℃) distillation
singular tray
Shape ^* Distillation pressure
(mmHg) Distillation temperature
(℃) One A KOH 19.5-20.0 105 25 70 T3 730-740 37-39 2 A KOH 19.5-20.0 106 25 70 T3 730-740 37-39 3 A KOH 19.5-20.0 105 26 70 T3 730-740 37-39 4 A KOH 19.5-20.0 105 25 70 T3 730-740 37-39 5 A KOH 19.5-20.0 106 27 70 T3 730-740 37-39 6 A KOH 19.5-20.0 105 26 70 T3 730-740 37-39 7 A KOH 19.5-20.0 105 26 70 T3 730-740 37-39 8 A KOH 19.5-20.0 110 25 70 T3 730-740 37-39 9 A KOH 19.5-20.0 105 25 70 T3 730-740 37-39 10 A KOH 19.5-20.0 107 26 70 T3 730-740 37-39 11 B NaOH 19.5-20.0 105 26 70 T3 730-740 37-39 12 B NaOH 19.5-20.0 106 26 70 T3 730-740 37-39 13 B NaOH 19.5-20.0 105 26 70 T3 730-740 37-39 14 B NaOH 19.5-20.0 107 25 70 T3 730-740 37-39 15 A KOH 19.5-20.0 105 25 110 T3 730-740 37-39 16 A KOH 19.5-20.0 106 25 110 T3 730-740 37-39 17 A KOH 19.5-20.0 105 26 110 T3 730-740 37-39 18 A KOH 19.5-20.0 105 25 110 T3 730-740 37-39 19 A KOH 19.5-20.0 106 27 110 T3 730-740 37-39 20 A KOH 19.5-20.0 105 26 110 T3 730-740 37-39 21 A KOH 19.5-20.0 105 26 110 T3 730-740 37-39 22 A KOH 19.5-20.0 110 25 110 T3 730-740 37-39 23 A KOH 19.5-20.0 105 25 110 T3 730-740 37-39 24 A KOH 19.5-20.0 107 26 110 T3 730-740 37-39 25 B NaOH 19.5-20.0 105 26 110 T3 730-740 37-39 26 B NaOH 19.5-20.0 106 26 110 T3 730-740 37-39 27 B NaOH 19.5-20.0 105 26 110 T3 730-740 37-39 28 B NaOH 19.5-20.0 107 25 110 T3 730-740 37-39

* T3: bubble cap type

In addition, as described above, the supernatant obtained after the aqueous alkali solution and the organic solvent finally recovered after the distillation step were measured for each change rate, moisture and organic solvent content, and residual photoresist (non-detection: ND, less than 0.01%). The results are shown in Table 3 below. In the following Table 3, the change with time is shown as a percentage (%) of solid-resist phase separation due to solid-liquid phase separation.

Example
No. Alkaline aqueous solution treatment result Distillation result (70 steps) Change over time
(%) Water content
(%) PGMEA
content(%) Water content
(%) PGMEA
content(%) Residue
Photoresist One 10 0.6 or less 95.37 0.021 97.38 ND 2 12 0.6 or less 96.1 0.018 97.73 ND 3 10 0.6 or less 95.24 0.018 97.85 ND 4 11 0.6 or less 95.11 0.019 97.90 ND 5 12 0.6 or less 95.3 0.017 97.99 ND 6 10 0.6 or less 95.27 0.014 98.10 ND 7 12 0.6 or less 95.28 0.013 98.21 ND 8 10 0.6 or less 95.18 0.014 98.22 ND 9 12 0.6 or less 95.22 0.012 98.26 ND 10 10 0.6 or less 95.31 0.010 98.32 ND 11 14 0.6 or less 88.16 0.010 98.36 ND 12 13 0.6 or less 87.94 0.013 98.46 ND 13 13 0.6 or less 88.32 0.012 98.22 ND 14 15 0.6 or less 88.27 0.008 98.15 ND 15 10 0.6 or less 95.37 Less than 0.005 99.9 or more ND 16 12 0.6 or less 96.1 Less than 0.005 99.9 or more ND 17 10 0.6 or less 95.24 Less than 0.005 99.9 or more ND 18 11 0.6 or less 95.11 Less than 0.005 99.9 or more ND 19 12 0.6 or less 95.3 Less than 0.005 99.9 or more ND 20 10 0.6 or less 95.27 Less than 0.005 99.9 or more ND 21 12 0.6 or less 95.28 Less than 0.005 99.9 or more ND 22 10 0.6 or less 95.18 Less than 0.005 99.9 or more ND 23 12 0.6 or less 95.22 Less than 0.005 99.9 or more ND 24 10 0.6 or less 95.31 Less than 0.005 99.9 or more ND 25 14 0.6 or less 88.16 Less than 0.005 99.9 or more ND 26 13 0.6 or less 87.94 Less than 0.005 99.9 or more ND 27 13 0.6 or less 88.32 Less than 0.005 99.9 or more ND 28 15 0.6 or less 88.27 Less than 0.005 99.9 or more ND

As shown in Table 3, the organic solvent recovered according to the present invention is preferable in terms of high purity product production process conditions to remove the water content in the 70 stages, 0.02%, 110 stages 0.05% or less, respectively, PGMEA In terms of content, it was confirmed that the high purity of 98% or more, more specifically, 99.9% or more under the process conditions at 110 stages. In addition, it can be seen that it has a very good performance not detected even in the residual resist measurement results.

Example  15

The concentration of the metal component contained in the PGMEA finally recovered in Example 24 and propylene glycol monomethyl ether acetate (PGMEA; iron drum), which is a commercially available organic solvent commercially available as a control, The measurement was performed using an inductively coupled plasma mass spectrometer (ICP-MS DRC II) manufactured by Elmer (Perkin Elmer), and the measurement results are shown in Table 4 below. The unit is ppb.

Analysis item Example 24 Control Na 0.102 2.967 Mg 0.022 3.471 Al 0.473 0.614 K 0.614 1.449 Ca 0.089 0.367 Cr 0.026 0.365 Mn 0.046 0.572 Fe 0.071 4.683 Ni 0.028 3.173 Cu 0.233 1.166 Zn 0.499 380.677 Pb 0.066 0.364 Sn 0.027 0.178

As shown in Table 4, the organic solvent finally recovered according to the present invention contains metal ions to a significantly lower level than the control group, which is a commercially available product, thereby providing high purity purification performance sufficient for reuse in semiconductor and display manufacturing processes. It can be seen that it has.

The present invention can effectively remove the photoresist, metal ions, and fine particles from the waste solution generated in the semiconductor or liquid crystal display manufacturing process and recover the high-purity organic solvent efficiently, the organic solvent recovered in the semiconductor and display manufacturing process Can be reused to improve process efficiency and reduce process costs.

1 is a configuration diagram briefly showing an example of an organic solvent recovery process apparatus according to an embodiment of the present invention.

Figure 2 is a schematic diagram showing an example of an alkaline aqueous solution reactor apparatus according to an embodiment of the present invention.

Figure 3 is a schematic diagram showing an example of a tray in a distillation apparatus according to an embodiment of the present invention.

Figure 4a, 4b, 4c, 4d is a schematic diagram showing an example of the gas-liquid contact mechanism part in the distillation apparatus according to an embodiment of the present invention (4a is a sieve type, 4b is a reflow type, 4c is a bubble cap type, And 4d is ballast type).

<Description of the symbols for the main parts of the drawings>

100: aqueous alkali solution reactor 101: reservoir tank

102: transfer pump 103: circulation pump

104: temperature rising tank 105: heat exchanger

106, 108, 109, 111, 112, 113: heat exchanger 107: distillation column

110: other reactor 114: reservoir

200: aqueous alkali solution reactor tank 201: steam jacket

202: drain line 203: discharge line

Claims (16)

A method of recovering an organic solvent from a waste liquid used to remove unnecessary photoresist from an edge or peripheral device of a substrate in manufacturing a semiconductor or a liquid crystal display, Adding an aqueous alkali solution to the waste liquid to perform solid-liquid phase separation, and Distilling the separated liquid phase Including, The solid-liquid phase separation step is a method for recovering the organic solvent from the waste liquid for removing photoresist that is cooled after the temperature is raised to 90 to 130 ℃ and separating the liquid phase. delete The method of claim 1, The solid-liquid phase separation step is a method for recovering the organic solvent from the photoresist removal waste liquid is carried out under a basic condition of pH 10 or more. The method of claim 1, The aqueous alkali solution for removing photoresist comprising at least one selected from the group consisting of hydroxides of alkali metals or alkaline earth metals, carbonates of alkali metals or alkaline earth metals, phosphates of alkali metals or alkaline earth metals, ammonia, and amines. A method for recovering organic solvent from waste liquid. The method of claim 4, wherein The alkaline aqueous solution is a method for recovering the organic solvent from the waste solution for removing photoresist that comprises one or more selected from the group consisting of NaOH, KOH, Na ₂ CO ₃ , ammonia, and monoethanolamine. The method of claim 1, The alkaline aqueous solution is a method for recovering the organic solvent from the waste solution for removing photoresist is added to 15 to 25 parts by weight with respect to 100 parts by weight of the waste liquid. The method of claim 1, The waste liquid is a method for recovering the organic solvent from the waste liquid for photoresist removal containing propylene glycol monomethyl ether acetate (PGMEA). The method of claim 7, wherein The waste liquid is propylene glycol monomethyl ether (PGME), cyclohexanone, propanoic acid (3-ethoxy-, ethyl ester), diethylene glycol monoethyl ether (Diethylene glycol monoethyl ether, EDG), diethylene glycol dimethyl ether (DMG), and acetone at least one organic solvent selected from the group consisting of a method for recovering the organic solvent from the waste liquid for removing the photoresist. The method of claim 1, The distillation step is a method for recovering the organic solvent from the waste liquid for removing photoresist is carried out under a pressure of 730 to 740 mmHg. The method of claim 1, The distillation step is a method for recovering the organic solvent from the waste for removing photoresist is carried out at a temperature of 35 to 40 ℃. The method of claim 10, The distillation step is a method for recovering the organic solvent from the waste liquid for removing photoresist performed at a temperature of 37.0 to 39.0 ℃. The method of claim 1, The distillation step is a method of recovering the organic solvent from the waste liquid for photoresist removal performed by using a gas-liquid contact mechanism selected from the group consisting of sieve type, reflow type, bubble cap type, and ballast type. The method of claim 1, Wherein the waste liquid containing an EBR thinner (Edge Bid Remover Thinner) method for recovering the organic solvent from the waste liquid for photoresist removal. The method of claim 1, The organic solvent recovered after the distillation step is a method for recovering the organic solvent from the photoresist removal waste liquid having a content of propylene glycol monomethyl ether acetate (PGMEA) of 95 parts by weight or more based on 100 parts by weight of the organic solvent. . The method of claim 1, The organic solvent recovered after the distillation step, the residual content of the photoresist solid content is 0 to 0.01 parts by weight based on 100 parts by weight of the organic solvent, the organic solvent recovery method from the waste liquid for removing the photoresist. The method of claim 1, The organic solvent recovered after the distillation step is a residual content of the metal component is 0 to 100 ppb for each metal component recovery method of the organic solvent from the waste for removing the photoresist.

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