KR100997537B1 - A photovoltaic power generating apparatus coated with antifouling paint - Google Patents

Abstract

PURPOSE: A solar power generation system with antipollution coating is provided to prevent static electricity under low humidity by coating the surface of a solar power generation module with a conductive material such as titanium dioxide and silver. CONSTITUTION: An N-type semiconductor(100) receives light from the sun. A P-type semiconductor(200) has a PN junction with the N-type semiconductor. An antireflection film(300) blocks the reflection of the sunlight and transfers solar energy to the N-type semiconductor without loss. An electrode(400) supplies power to a load by using electronics which are collected at the N-type semiconductor. An antipollution coating film(500) prevents contamination by decomposing an organic compound.

Description

Anti-Pollution Coated Solar Power Plant {A PHOTOVOLTAIC POWER GENERATING APPARATUS COATED WITH ANTIFOULING PAINT}

The present invention relates to an anti-pollution coated photovoltaic device, and in particular, to prevent charging by using an anti-fouling coating film and to decompose oil and dust, and to form a water film with water molecules to remove contaminants. The present invention relates to an anti-pollution coated photovoltaic device that can improve the power generation efficiency by maintaining the surface of the power generation module.

As the consumption of fossil fuels increases, global warming due to the release of carbon dioxide is becoming serious, and due to severe environmental pollution caused by explosion accidents of nuclear power plants and radioactive pollution by nuclear wastes, There is a significant increase in interest. Accordingly, a lot of movements are being made to revive the environment by using public transportation or turning off unnecessary lights.

In recent years, instead of fossil fuel or uranium-fired power generation or nuclear power generation, environmentally-friendly power generation means that use the natural environment as it is and do not emit pollutants have been spotlighted. Examples are solar and solar power, wind power or tidal power. In particular, in the case of solar power and solar power generation, the generator can be installed wherever the sunlight can reach, and since it is easy to install and has good power generation efficiency, it is installed on the roof of a house or building and is widely used.

However, since the solar and solar generators must be exposed to the outside in order to receive sunlight, they are vulnerable to external pollution factors. In particular, there is a problem in that organic compounds such as oil or dust are stuck to the surface of the power generation module, thereby rapidly decreasing the efficiency of power generation using sunlight.

The present invention has been proposed to solve the above problems of the conventionally proposed methods, by coating the surface of the photovoltaic module with a coating material mixed with a titanium dioxide and silver, a conductive material, the static electricity even in a low humidity state It is an object of the present invention to provide an anti-pollution coated photovoltaic device that can prevent the occurrence and to block the contamination of the catch attachment.

In addition, the present invention, when a large number of grease in the atmosphere is combined with the surrounding dust to change into organic pollutants and attached to the surface of the photovoltaic module, titanium dioxide contained in the antifouling coating film by continuously decomposing organic pollutants Another object is to provide an anti-pollution coated photovoltaic device that can prevent the power generation efficiency from dropping.

In addition, the present invention, as the antifouling coating film exhibits hydrophilic property that is easily combined with water molecules, as soon as the water reaches the surface of the photovoltaic module to form a water film rather than water droplets while spreading at a wide angle, the interface It is another object of the present invention to provide an anti-pollution coated photovoltaic device that can be easily cleaned of the contaminants decomposed by the action to maximize the efficiency of power production.

According to a feature of the present invention for achieving the above object, the anti-fouling coated photovoltaic device,

An N-type semiconductor having a higher free electron density than the hole density and receiving sunlight from the sun;

A positive-type semiconductor (P-type semiconductor) having a higher hole density than the free electron density and a PN junction with an N-type semiconductor;

An anti-reflection film attached to an upper end of the N-type semiconductor, and blocking the reflection of sunlight to allow solar energy to be transferred to the N-type semiconductor without loss;

An electrode configured to include a back electrode attached to the bottom surface of the P-type semiconductor and a front electrode attached to the top surface of the N-type semiconductor, the electrode supplying power to the load by using electrons collected in the N-type semiconductor; And

Coated on the upper surface of the anti-reflection film, the titanium dioxide (Titanium Dioxide) particle surface combined with a transition metal and colloidal silica (Colloidal Silica) in the form, prevents pollution by preventing the charging and decomposition of organic compounds to prevent contamination Including a coating film is characterized by its configuration.

Preferably, the front electrode,

It may be attached to the top surface of the N-type semiconductor and may be formed in a plurality of forms to penetrate the anti-reflection film.

More preferably, the antifouling coating film,

The anti-reflection film and the front electrode may be coated in a form covering both.

Preferably, the anti-fouling coating film,

(1) preparing an anatase type titanium dioxide (Anatase type Titanium Dioxide) dispersion using titanium alkoxide;

(2) preparing a transition metal EDTA salt in which 1-3 transition metals are substituted; And

(3) can be prepared by the step of allowing the transition metal and colloidal silica to be bonded to the titanium dioxide particle surface.

More preferably,

In the step (1), water and acid are mixed at a ratio of 1: 0.01 to 0.1, and then 0.01 to 0.1 mole of titanium alkoxide is added, and the titanium alkoxide is stirred at 60 to 80 ° C. for 6 to 8 hours. By hydrolysis and peptizing reaction to prepare an anatase type titanium dioxide dispersion having a particle size of 1 to 10 nm,

In the step (2), Na ₄ EDTA (ethylene diamine tetra acetic acid, ethylenediamine tetraacetic acid) and the transition metal compound is dissolved in water in a 1: 0.1 ~ 0.75 molar ratio and mixed and 1 ~ in the temperature range of 40 ~ 60 ℃ By stirring for 10 hours, a transition metal EDTA salt in which 1-3 transition metals were substituted instead of Na atoms was prepared.

In the step (3), the dispersion of the transition metal EDTA salt and the surface of the anatase-type titanium dioxide dispersion in which the dissolution of the transition metal EDTA salt and the surface area of 200 ~ 1000㎡ / g and negatively charged colloidal silica 30 By stirring for 1-2 hours at ˜60 ° C., the transition metal and the colloidal silica may be bonded to the titanium dioxide particle surface.

Even more preferably,

The water is deionized water,

The acid is nitric acid (HNO ₃ ), hydrochloric acid (HCl), sulfuric acid (H ₂ SO ₄ ) or acetic acid (CH ₃ COOH),

The titanium alkoxide may be titanium propoxide, titanium isopropoxide, or titanium buthoxide.

Even more preferably, the transition metal,

The weight ratio may be silver (Ag) which is 10% by weight based on the titanium dioxide.

Even more preferably, the EDTA of the transition metal EDTA salt is

The weight ratio may be 40 to 60% by weight based on the titanium dioxide.

Even more preferably, the colloidal silica,

The weight ratio may be 50 to 150% by weight based on the titanium dioxide.

According to the anti-pollution coated photovoltaic device proposed in the present invention, by coating the surface of the photovoltaic module with a coating material mixed with titanium dioxide and silver, which is a conductive material, to prevent the occurrence of static electricity even in low humidity conditions And primarily block contamination of the miscellaneous attachments.

In addition, the anti-pollution coated photovoltaic device according to the present invention is included in the anti-fouling coating film when a large number of oil stains in the atmosphere are combined with the surrounding dust to change into organic pollutants and then attached to the surface of the photovoltaic module. Titanium dioxide continuously decomposes organic pollutants, thereby preventing the power generation efficiency from dropping.

In addition, the antifouling coated photovoltaic device according to the present invention, as the antifouling coating film exhibits hydrophilic property that is easily combined with water molecules, purge at a wide angle as soon as water touches the surface of the photovoltaic module By forming a water film instead of water droplets, the contaminants decomposed by the interfacial action can be easily washed to maximize the efficiency of power production.

1 is a cross-sectional view of the anti-fouling coated photovoltaic device according to an embodiment of the present invention.
2 is a view showing the power generation principle of the anti-fouling coated photovoltaic device according to an embodiment of the present invention.
Figure 3 is a flow chart for the anti-fouling coating film manufacturing process of the anti-fouling coated photovoltaic device according to an embodiment of the present invention.
4 is a view showing the anti-pollution principle of the anti-fouling coated photovoltaic device according to an embodiment of the present invention.
Figure 5 is a view showing the antifouling effect of the antifouling coated photovoltaic device according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. However, in describing the preferred embodiment of the present invention in detail, if it is determined that the detailed description of the related known function or configuration may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted. The same or similar reference numerals are used throughout the drawings for portions having similar functions and functions.

In addition, throughout the specification, when a part is 'connected' to another part, it is not only 'directly connected' but also 'indirectly connected' with another element in between. Include. In addition, the term 'comprising' of an element means that the element may further include other elements, not to exclude other elements unless specifically stated otherwise.

1 is a cross-sectional view of an antifouling coated photovoltaic device according to an embodiment of the present invention. As shown in FIG. 1, an antifouling coated photovoltaic device 10 according to an embodiment of the present invention includes an N-type semiconductor 100, a P-type semiconductor 200, an anti-reflection film 300, and an electrode. 400, the antifouling coating film 500 may be configured to be included.

In the N-type semiconductor 100, the free electron density is higher than the hole density and receives sunlight from the sun. It is prepared by adding small amounts of pentavalent elements such as arsenic (As) to pure silicon (Si) crystals, which are tetravalent elements. At this time, since silicon has four home appliances while arsenic has five home appliances, when one arsenic atom is combined with four silicon, one electron remains unbonded. In addition, since arsenic atoms lose one electron and become a cation (As +), surplus electrons that do not participate in the bond revolve around the arsenic cation, and this surplus electron is the carrier (electron) of the N-type semiconductor 100. do.

The positive-type semiconductor 200 has a hole density higher than the free electron density and is PN bonded to the N-type semiconductor 100. A semiconductor having properties opposite to that of an N-type, is produced by adding a small amount of a trivalent element such as boron (B) to a pure silicon (Si) crystal that is a tetravalent element. In this case, since silicon has four home appliances while boron has three home appliances, when one boron atom is combined with four silicon, one electron is insufficient. Therefore, boron atoms become anions (B-) due to incomplete bonds in which one electron is insufficient, and holes are formed around boron, and holes become carriers of the P-type semiconductor 200 by revolving around boron (B-).

As described above, the semiconductor of the present invention is made by forming the N-type semiconductor 100 on its surface based on the P-type semiconductor 200, and an electric field is generated by the PN junction. Power generation principle by solar light will be described in detail with reference to FIG. 2.

2 is a view showing the power generation principle of the anti-fouling coated photovoltaic device according to an embodiment of the present invention. As shown in FIG. 2, when sunlight is irradiated to the N-type semiconductor 100 of the antifouling coated photovoltaic device 10 according to an embodiment of the present invention, the semiconductor may be discharged by energy of sunlight. Electrons and holes are generated inside, and the semiconductor is freely moved inside. Then, when it enters the electric field generated by the PN junction, electrons reach the N-type semiconductor 100, holes reach the P-type semiconductor 200, wherein the P-type semiconductor 200 and the surface of the N-type semiconductor 100 The formed rear electrode 410 and the front electrode 420 can supply power to the load by flowing electrons to an external circuit. Therefore, the present invention is the same as a general photovoltaic power generation device, since it generates power using only solar light and emits no pollutants at all, solves various problems arising from conventional thermal power generation or nuclear power generation as an environmentally friendly power generation device. Can be.

The anti-reflection film 300 is attached to the upper end of the N-type semiconductor 100, by blocking the reflection of sunlight so that the solar energy is transmitted to the N-type semiconductor 100 without loss. The anti-reflection film 300 is provided to allow the present invention to maximize the power output by injecting as much solar energy as possible into the N-type semiconductor 100. At this time, the silicon constituting the N-type semiconductor 100 is originally gray, but due to the coating of the anti-reflection film 300, the surface of the present invention can be a light blue color.

The electrode 400 includes a back electrode 410 attached to the bottom surface of the P-type semiconductor 200 and a front electrode 420 attached to the top surface of the N-type semiconductor 100. Power is supplied to the load by using electrons collected in the At this time, the front electrode 420 is attached to the top surface of the N-type semiconductor 100 and penetrates the anti-reflection film 300 may be formed in plurality, the rear electrode 410 is the bottom surface of the P-type semiconductor 200 It may be in the form in contact with the front of the. As such, the shape of the front electrode 420 and the rear electrode 410 is different from the amount of solar energy that the N-type semiconductor 100 can receive by the area of the front electrode 420, while the rear electrode ( 410 does not interfere with the absorption of solar energy.

The anti-fouling coating film 500 is coated on the upper surface of the anti-reflection film 300, the transition metal and colloidal silica (Si) is combined on the surface of the titanium dioxide (Titanium Dioxide) particles, to prevent charging and organic Decomposition of the compound prevents contamination. In this case, the antifouling coating film 500 may be coated in a form covering both the antireflection film 300 and the front electrode 420. Although the portion where the front electrode 420 is located does not transmit solar energy to the N-type semiconductor 100, the coating of the antifouling coating film 500 except for the front electrode 420 increases the efficiency of the coating operation. This can be significantly reduced, because if contaminants are attached to the front electrode 420 may not be properly supplied power to the load. A manufacturing process of the antifouling coating film 500 will be described in detail with reference to FIG. 3.

Figure 3 is a flow chart for the anti-fouling coating film manufacturing process of the anti-fouling coated photovoltaic device according to an embodiment of the present invention. As shown in FIG. 3, in the antifouling coating film 500 manufacturing process of the antifouling coated photovoltaic device 10 according to an embodiment of the present invention, anatase-type titanium dioxide dispersion is prepared using titanium alkoxide. Step (S100), preparing a transition metal EDTA salt in which the transition metal is substituted 1 to 3 (S200), comprising a step (S300) of combining the transition metal and colloidal silica on the titanium dioxide particle surface Can be.

In step S100, anatase type titanium dioxide (Anatase type Titanium Dioxide) dispersion is prepared using titanium alkoxide. Specifically, water and acid are mixed at a ratio of 1: 0.01 to 0.1, and then 0.01 to 0.1 mole of titanium alkoxide is added and stirred for 6 to 8 hours at a temperature of 60 to 80 ° C. to hydrolyze the titanium alkoxide with water and acid and By peptizing, an anatase type titanium dioxide dispersion having a particle size of 1 to 10 nm can be prepared.

Water can then be deionized to prevent unintended chemical reactions from occurring. In addition, the acid may be nitric acid (HNO ₃ ), hydrochloric acid (HCl), sulfuric acid (H ₂ SO ₄ ) or acetic acid (CH ₃ COOH), titanium alkoxide is titanium propoxide (titanium propoxide), titanium isopropoxide ( Titanium isopropoxide, or titanium buthoxide.

In step S200, a transition metal EDTA salt in which 1-3 transition metals are prepared. Specifically, Na ₄ EDTA (ethylene diamine tetra acetic acid) and a transition metal compound are dissolved in water at 1: 0.1 to 0.75 molar ratio, mixed and stirred for 1 to 10 hours at a temperature range of 40 to 60 ° C. By doing so, it is possible to prepare a transition metal EDTA salt in which 1-3 transition metals are substituted in place of Na atoms.

At this time, since the more transition metal atoms in the Na ₄ EDTA molecule may be changed to an insoluble compound, the number of substitution of transition metal atoms is most preferably 1 to 2. In addition, by using silver (Ag) having a weight ratio of 10% by weight to titanium dioxide as the transition metal, it is possible to maintain the efficiency of photovoltaic power generation by improving sterilizing power and antistatic function.

In step S300, the transition metal and the colloidal silica are bonded to the titanium dioxide particle surface. Specifically, a dispersion in which the transition metal EDTA salt is dissolved, and a colloidal silica having a surface area of 200 to 1000 m 2 / g and a negatively charged surface on the titanium dioxide surface of the anatase type titanium dioxide dispersion at 30 to 60 ° C. By stirring for 1-2 hours, the transition metal and the colloidal silica can be bonded to the surface of the titanium dioxide particles. In this case, colloidal silica refers to a colloidal silicon particle (usually called silica) in which silica particles are dispersed in a dispersion such as water or ethanol.

As the transition metal EDTA salt is dissolved in water in step S300, EDTA is present as an anion having four or less carboxyl groups (COO ⁻ ), and colloidal silica is positively charged because the surface is negatively charged. It can be stabilized by strong bonding with the electrostatic interaction with the particle surface of titanium. In this case, the EDTA of the transition metal EDTA salt may have a weight ratio of 40 to 60 wt% based on titanium dioxide, and the colloidal silica may have a weight ratio of 50 to 150 wt% based on titanium dioxide.

4 is a view showing the pollution prevention principle of the anti-fouling coated photovoltaic device according to an embodiment of the present invention. As shown in Figure 4, on the upper surface of the anti-reflection film 300 of the anti-fouling coated photovoltaic device 10 according to an embodiment of the present invention, an anti-fouling coating film produced through the manufacturing process described above ( 500), even if the present invention is placed in a low humidity state, the titanium dioxide and silver evenly distributed on the surface of the conductive material to prevent the electrostatic (charge) phenomenon, it is possible to primarily prevent the contamination of the catches.

Secondly, when a large number of invisible but present oils in the air combine with the surrounding dust to turn into organic pollutants and adhere to the surface of the PV modules, titanium dioxide continues to strongly By decomposing, it is possible to prevent the amount of sunlight absorbed by oil or dust. In addition, since the antifouling coating film 500 is hydrophilic, organic contaminants decomposed by titanium dioxide and exhibiting a surface active state can be easily washed by a thin water film formed by water molecules such as rain or snow.

5 is a view showing the antifouling effect of the antifouling coated photovoltaic device according to an embodiment of the present invention. As shown in Figure 5, the antifouling coated photovoltaic device 10 according to an embodiment of the present invention, dust or other pollution when compared with the case without coating the antifouling coating film 500 Since the surface of the photovoltaic module may be effectively contaminated by a material, the N-type semiconductor 100 may absorb the maximum amount of sunlight. Therefore, the present invention has an advantage of excellent power generation efficiency, and easy maintenance and repair as compared to the conventional photovoltaic device.

The present invention described above may be variously modified or applied by those skilled in the art, and the scope of the technical idea according to the present invention should be defined by the following claims.

10: anti-pollution coated photovoltaic device
100: N-type semiconductor 200: P-type semiconductor
300; Anti-reflection film 400: electrode
410: rear electrode 420: front electrode
500: antifouling coating film

Claims (9)

In the photovoltaic device,
An N-type semiconductor having a higher free electron density than the hole density and receiving sunlight from the sun;
A positive-type semiconductor (P-type semiconductor) having a higher hole density than the free electron density and a PN junction with an N-type semiconductor;
An anti-reflection film attached to an upper end of the N-type semiconductor, and blocking the reflection of sunlight to allow solar energy to be transferred to the N-type semiconductor without loss;
An electrode configured to include a back electrode attached to the bottom surface of the P-type semiconductor and a front electrode attached to the top surface of the N-type semiconductor, the electrode supplying power to the load by using electrons collected in the N-type semiconductor; And
Coated on the upper surface of the anti-reflection film, the titanium dioxide (Titanium Dioxide) particle surface combined with a transition metal and colloidal silica (Colloidal Silica) in the form, prevents pollution by preventing the charging and decomposition of organic compounds to prevent contamination Including coatings,
The antifouling coating film,
(1) preparing an anatase type titanium dioxide (Anatase type Titanium Dioxide) dispersion using titanium alkoxide;
(2) preparing a transition metal EDTA salt in which 1-3 transition metals are substituted; And
(3) Anti-pollution coated photovoltaic device characterized in that it is produced by the step of allowing the transition metal and colloidal silica to be bonded to the titanium dioxide particle surface.
The method of claim 1, wherein the front electrode,
Attached to the top surface of the N-type semiconductor and the anti-fouling coating photovoltaic device characterized in that it consists of a plurality of forms through the anti-reflection film.
The method of claim 2, wherein the anti-fouling coating film,
Pollution-resistant coated photovoltaic device characterized in that the coating to cover both the anti-reflection film and the front electrode.
delete The method of claim 1,
In the step (1), water and acid are mixed at a ratio of 1: 0.01 to 0.1, and then 0.01 to 0.1 mole of titanium alkoxide is added, and the titanium alkoxide is stirred at 60 to 80 ° C. for 6 to 8 hours. By hydrolysis and peptizing reaction to prepare an anatase type titanium dioxide dispersion having a particle size of 1 to 10 nm,
In the step (2), Na ₄ EDTA (ethylene diamine tetra acetic acid, ethylenediamine tetraacetic acid) and the transition metal compound is dissolved in water in a 1: 0.1 ~ 0.75 molar ratio and mixed and 1 ~ in the temperature range of 40 ~ 60 ℃ By stirring for 10 hours, a transition metal EDTA salt in which 1-3 transition metals were substituted instead of Na atoms was prepared.
In the step (3), the dispersion of the transition metal EDTA salt and the surface of the anatase-type titanium dioxide dispersion in which the dissolution of the transition metal EDTA salt and the surface area of 200 ~ 1000㎡ / g and negatively charged colloidal silica 30 The anti-pollution coated photovoltaic device characterized in that the transition metal and colloidal silica is bonded to the surface of the titanium dioxide particles by stirring for 1 to 2 hours at ~ 60 ℃.
The method of claim 5,
The water is deionized water,
The acid is nitric acid (HNO ₃ ), hydrochloric acid (HCl), sulfuric acid (H ₂ SO ₄ ) or acetic acid (CH ₃ COOH),
The titanium alkoxide, titanium propoxide (Titanium propoxide), titanium isopropoxide (Titanium isopropoxide), or titanium butoxide (Titanium buthoxide) characterized in that the anti-fouling coated photovoltaic device.
The method of claim 5, wherein the transition metal,
An antifouling coated photovoltaic device, characterized in that the weight ratio is 10% by weight of silver (Ag) based on the titanium dioxide.
The method according to claim 5, wherein the EDTA of the transition metal EDTA salt,
Pollution-resistant coated photovoltaic device, characterized in that the weight ratio is 40 to 60% by weight relative to the titanium dioxide.
The method of claim 5, wherein the colloidal silica,
Pollution-resistant coated photovoltaic device, characterized in that the weight ratio is 50 to 150% by weight relative to the titanium dioxide.

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