KR100984357B1 - Liquid crystal display - Google Patents

Abstract

The liquid crystal display according to the present invention includes a first display panel on which a plurality of thin film transistors and pixel electrodes are formed on a first glass substrate having a thickness of 0.05 mm to 0.7 mm, and a second glass substrate having a thickness of 0.05 mm to 0.7 mm. The color filter, the black matrix, and the common electrode are formed thereon, and include a liquid crystal filled in a gap between the first display panel and the second display panel facing the gap with the first display panel.

Thin, Glass Substrates, Substrate Supports, Adhesives

Description

Liquid crystal display

1 is a layout view of a liquid crystal display according to an exemplary embodiment of the present invention.

2A and 2B are cross-sectional views of the liquid crystal display shown in FIG. 1 taken along the lines IIa-IIa 'and IIb-IIb', respectively;

3A to 3D are cross-sectional views illustrating a method of manufacturing an upper panel (opposing panel) in the liquid crystal display according to the exemplary embodiment of the present invention shown in FIGS.

4, 6, 8, and 10 are layout views in an intermediate step of a method of manufacturing a lower panel (opposing panel) in the liquid crystal display according to the exemplary embodiment of the present invention shown in FIGS. 1 to 2B, respectively. , Drawing in order of process,

5A and 5B are cross-sectional views of the thin film transistor array panel of FIG. 4 taken along a line Va-Va 'and Vb-Vb', respectively.

7A and 7B are cross-sectional views of the thin film transistor array panel of FIG. 6 taken along lines VIIa-VIIa 'and VIIb-VIIb', respectively.

9A and 9B are cross-sectional views of the thin film transistor array panel of FIG. 8 taken along lines IXa-IXa 'and IXb-IXb', respectively.

11A and 11B are cross-sectional views of the thin film transistor array panel of FIG. 10 taken along lines XIa-XIa 'and XIb-XIb', respectively.

12A and 12B are cross-sectional views of the thin film transistor array panel of FIG. 10 taken along lines XIa-XIa 'and XIb-XIb', respectively, and are views of the next steps of FIGS. 11A and 11B.

13 is a simulation diagram illustrating a simulation result of a liquid crystal display device formed by a low temperature process according to an embodiment of the present invention.

The present invention relates to a liquid crystal display device, and more particularly, to a display panel for a liquid crystal display device and a manufacturing method thereof.

The liquid crystal display device includes a liquid crystal layer having an anisotropy dielectric constant having an electric field generating electrode for generating an electric field and injected into two gaps between the two display panels and the two display panels separated by a predetermined gap. Such a liquid crystal display generates an electric field in the liquid crystal layer by applying a voltage to the field generating electrode, and displays an image by controlling the transmittance of light passing through the liquid crystal layer by adjusting the intensity of the electric field depending on the magnitude of the voltage.

Among the liquid crystal display devices currently used mainly, a plurality of pixel electrodes are provided on one display panel, and one common electrode is formed on the entire surface of the other display panel. The liquid crystal display displays an image by switching a voltage applied to a pixel electrode using a thin film transistor, which is a three-terminal element, and a display panel provided with the pixel electrode and the thin film transistor is called a thin film transistor display panel.

Recently, such a liquid crystal display device requires a small size and a light weight so that a user can carry it in the case of a portable TV or a notebook computer. However, the structure and current technology have limitations on the small size and light weight. However, the glass substrate, which is the most basic component of the liquid crystal display, has the largest volume and weight among the components of the liquid crystal display, and there is room for reducing the volume and the weight thereof.

In order to reduce the volume and weight of the glass substrate, the thickness of the glass substrate should be thin. In the manufacturing process of the liquid crystal display panel, a physical force is often applied to the glass substrate, and the process of heating and cooling the glass substrate is also performed. When the glass substrate becomes thinner and the thickness of the glass substrate becomes thinner, the glass substrate tends to be damaged. Therefore, recently, a method of using a thick glass substrate at the beginning of the process and then forming a thin glass substrate in a subsequent process has been used. That is, by forming an element such as a thin film transistor on a thick glass substrate to form a thin film transistor array panel, the thickness of the thin film transistor array panel is reduced by changing the outer surface of the glass substrate on which the element is not formed.

However, in the manufacturing method of the display panel for a liquid crystal display device, defects are likely to occur due to physical and chemical stresses on elements such as thin film transistors formed on the inner surface in the process of grinding the outer surface of the glass substrate. In addition, the process of grinding the outer surface of the glass substrate has a high process cost, and the process is complicated to reduce the manufacturing yield of the liquid crystal display device.

One object of the present invention is to provide a display panel for a display device and a method of manufacturing the same, which can reduce the volume and weight of a liquid crystal display device.

In order to achieve the above object, the present invention provides the following liquid crystal display device.

More specifically, the display device comprising bonding the substrate support to the outer surface of the glass substrate having a thickness of 0.05mm ~ 0.7mm, forming a plurality of thin film layer on the glass substrate, separating the substrate support from the glass substrate The manufacturing method of the display panel for dragons is provided.

Here, it is preferable to use a substrate support made of any one of glass, metal, plastic, and ceramic.

In addition, the step of adhering the substrate support to the outer surface of the glass substrate, it is preferable to use an adhesive or double-sided adhesive tape that loses the adhesive force at a high temperature of 200 ℃ or more.

In addition, the step of separating the substrate support from the glass substrate preferably uses a thermal process or an infrared irradiation process.

The forming of the plurality of thin film layers on the glass substrate may include forming a gate line, forming a gate insulating film on the gate line, forming a semiconductor layer on the gate insulating film, and forming a data line and a drain electrode on the semiconductor layer. The method may include forming a passivation layer covering the data line and the drain electrode and having a contact hole, and forming a pixel electrode connected to the drain electrode through the contact hole on the passivation layer.

In addition, the forming of the plurality of thin film layers on the glass substrate may include forming a black matrix partitioning the pixel regions on the glass substrate, forming a color filter in each pixel region, and forming a common electrode on the color filter. desirable.

Alternatively bonding the first substrate support to the outer surface of the first glass substrate having a thickness of 0.05 mm to 0.7 mm, forming a plurality of thin film transistors and pixel electrodes on the inner surface of the first glass substrate, 0.05 mm to 0.7 adhering a second substrate support to an outer surface of the second glass substrate having a thickness of mm, forming a color filter, a black matrix and a common electrode on the inner surface of the second glass substrate, an inner surface of the first glass substrate and the second Bonding and bonding the inner surface of the glass substrate, and separating the first substrate support and the second substrate support from the first glass substrate and the second glass substrate, respectively.

Alternatively, a first display panel on which a plurality of thin film transistors and pixel electrodes are formed on a first glass substrate having a thickness of 0.05 mm to 0.7 mm, and a color filter and black on a second glass substrate having a thickness of 0.05 mm to 0.7 mm. A liquid crystal display device including a liquid crystal display having a matrix and a common electrode formed thereon and a liquid crystal filled in a gap between the first display panel and the second display panel facing the gap and between the first display panel and the second display panel is provided.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a part of a layer, film, region, plate, etc. is said to be "on" another part, this includes not only the other part being "right over" but also another part in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.

A liquid crystal display according to an exemplary embodiment of the present invention will now be described in detail with reference to the accompanying drawings.

FIG. 1 is a layout view of a liquid crystal display according to an exemplary embodiment of the present invention, and FIGS. 2A and 2B are cutaway views of the liquid crystal display shown in FIG. 1 along the lines IIa-IIa 'and IIb-IIb', respectively. It is a cross section.

As shown in FIGS. 1 and 2B, the liquid crystal display according to the present exemplary embodiment includes an upper display panel 200 and a lower display panel 100, and liquid crystals 3 formed between the two display panels 100 and 200. The substrate spacer 320 supports the two display panels 100 and 200 at regular intervals. In this case, the liquid crystal molecules (not shown) of the liquid crystal 3 may be formed on the two display panels 100 and 200 by the alignment force of the alignment layers 11 and 21 or the characteristics of the liquid crystal in the state where the major axis thereof is not applied to the electric field. It is arranged vertically with respect to. However, if necessary, the liquid crystal molecules may be arranged such that their major axes are parallel to the surfaces of the two display panels 100 and 200 and spirally twisted from the lower display panel 100 to the upper display panel 200.

The upper panel 200 is a substrate for expressing color, and a black matrix (not shown) is formed in a matrix shape to prevent light leakage on the glass substrate 210 having a thickness of 0.05 mm to 0.7 mm. It is. The color filter 230 is formed in a region defined by the black matrix, and the common electrode 270 formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO) is formed on the color filter 230. Is formed.

The lower panel 100 is a display panel for controlling color, and includes a plurality of gate lines 121 and a plurality of storage electrode lines on the glass substrate 110 having a thickness of 0.05 mm to 0.7 mm. 131 is formed. The gate line 121 and the storage electrode line 131 mainly extend in the horizontal direction and are separated from each other. The gate line 121 transmits a gate signal, and a portion of each gate line 121 protrudes upward to form a plurality of gate electrodes 124. The storage electrode line 131 receives a predetermined voltage such as a common voltage, and includes an expansion 137 that extends up and down in width.

The gate line 121 and the storage electrode line 131 may be formed of a silver-based metal such as silver (Ag) or a silver alloy having low resistivity, an aluminum-based metal such as aluminum (Al) or an aluminum alloy, and a copper-based copper such as copper or a copper alloy. It includes a conductive film made of metal, and in addition to the conductive film, chromium (Cr), titanium (Ti), tantalum (Ta), and molybdenum (Mo) having good physical, chemical and electrical contact properties with other materials, particularly ITO or IZO. And other conductive films made of alloys thereof (eg, molybdenum-tungsten (MoW) alloys). An example of the combination of the lower layer and the upper layer is chromium / aluminum-neodymium (Nd) alloy.

Sides of the gate line 121 and the storage electrode line 131 are inclined, and the inclination angle is in a range of about 30-80 ° with respect to the surface of the substrate 110.

A gate insulating layer 140 made of silicon nitride (SiNx) is formed on the gate line 121 and the storage electrode line 131.

A plurality of linear semiconductors 151 made of hydrogenated amorphous silicon (amorphous silicon is abbreviated a-Si) and the like are formed on the gate insulating layer 140. The linear semiconductor 151 extends mainly in the longitudinal direction, from which a plurality of extensions 154 extend toward the gate electrode 124.

A plurality of linear and island ohmic contacts 161 and 165 made of a material such as n + hydrogenated amorphous silicon doped with silicide or n-type impurities at a high concentration are formed on the semiconductor 151. have. The linear contact member 161 has a plurality of protrusions 163, and the protrusions 163 and the island contact members 165 are paired and positioned on the protrusions 154 of the semiconductor 151.                     

Side surfaces of the semiconductor 151 and the ohmic contacts 161 and 165 are also inclined, and the inclination angle is 30 to 80 degrees.

A plurality of data lines 171 and a plurality of drain electrodes 175 are formed on the ohmic contacts 161 and 165 and the gate insulating layer 140, respectively.

The data line 171 mainly extends in the vertical direction to cross the gate line 121 and transmit a data voltage. A plurality of branches extending from the data line 171 toward the drain electrode 175 forms a source electrode 173. The pair of source electrode 173 and the drain electrode 175 are separated from each other and positioned opposite to the gate electrode 123. The drain electrode 175 extends toward the extension portion 137 of the storage electrode line 131 and has a protrusion 177 overlapping the extension portion 137. The gate electrode 124, the source electrode 173, and the drain electrode 175 form a thin film transistor (TFT) together with the protrusion 154 of the semiconductor 151, and the channel of the thin film transistor is a source. A protrusion 154 is formed between the electrode 173 and the drain electrode 175.

The data line 171 and the drain electrode 175 may also include a conductive film made of a silver metal or an aluminum metal. In addition to the conductive film, chromium (Cr), titanium (Ti), tantalum (Ta), and molybdenum (Mo) may be used. ) And other conductive films made of alloys thereof. Sides of the data line 171 and the drain electrode 175 are also inclined, and the inclination angle is in the range of about 30-80 ° with respect to the horizontal plane.                     

The ohmic contacts 161 and 165 exist only between the semiconductor 151 below and the data line 171 and the drain electrode 175 above and serve to lower the contact resistance. The linear semiconductor 151 has an exposed portion between the source electrode 173 and the drain electrode 175 and is not covered by the data line 171 and the drain electrode 175, and in most places, the linear semiconductor 151 is provided. Although the width of is smaller than the width of the data line 171, as described above, the width becomes larger at the portion that meets the gate line 121 to strengthen the insulation between the gate line 121 and the data line 171.

The data line 171, the drain electrode 175, and the exposed portion of the semiconductor 151 may be disposed on the data line 171, the drain electrode 175, and the conductive capacitor 177 for the storage capacitor and the exposed portion of the semiconductor 151. Low dielectric constants such as a-Si: C: O and a-Si: O: F, which are formed by plasma enhanced chemical vapor deposition (PECVD), are organic materials having excellent planarization characteristics and photosensitivity. A passivation layer 180 made of an insulating material or an inorganic material silicon nitride is formed.

The passivation layer 180 is provided with a plurality of contact holes 182 and 187 exposing the end portion of the data line 171 and the drain electrode 175, respectively. Here, the plurality of contact holes 182 and 187 have a gentle profile by forming sidewalls of the contact holes 182 and 187 having an inclined surface having a predetermined inclination angle.

A plurality of pixel electrodes 190 and a plurality of contact assistants 82 made of a transparent conductor such as IZO or ITO or a reflective metal are formed on the passivation layer 180.

The pixel electrode 190 is physically and electrically connected to the drain electrode 175 through the contact hole 187 to receive a data voltage from the drain electrode 175.

The pixel electrode 190 to which the data voltage is applied generates an electric field together with a common electrode (not shown) of another display panel (not shown) to which a common voltage is applied, thereby generating liquid crystal molecules of the liquid crystal between the two electrodes. Rearrange.

The contact auxiliary members 82 are connected to ends of the data line 171 through the contact holes 182, respectively. The contact assistant 82 is not essential to serve to protect adhesion between the end portion of the data line 171 and an external device and to protect them, and application thereof is optional.

In addition, the contact hole 182 and the contact auxiliary member 82 may be formed at the end of the gate line 121, but when the gate driving circuit is made of a thin film transistor or the like directly on the substrate 110, FIGS. 2b does not require a contact and a contact assist member. On the other hand, when the gate driving circuit (not shown) for supplying a signal to the gate line 121 is mounted on the substrate 110 or the flexible circuit board (not shown) in the form of a chip, A contact hole and a contact auxiliary member connecting to the gate line 121 are required at an end portion.

Next, a method of manufacturing the upper panel 200 (the opposing display panel) and the lower panel 100 (the thin film transistor array panel) for a liquid crystal display according to an exemplary embodiment of the present invention will be described.                     

First, a method of manufacturing an upper panel, that is, a liquid crystal common electrode panel, of a liquid crystal display according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 3A to 3C.

As shown in FIG. 3A, in the manufacturing method of the upper panel 200 for a liquid crystal display according to the exemplary embodiment of the present invention, at least 200 ° C. or more is applied to the outer surface of the glass substrate 210 having a thickness of 0.05 mm to 0.7 mm. The substrate support 40 supporting the glass substrate 210 is bonded using the adhesive tape 50 that loses the adhesive force at a high temperature. In this case, the substrate support 40 may be made of any one of glass, metal, plastic, and ceramic, and may be attached to the glass substrate 210 using an adhesive that loses adhesive strength at a high temperature of 200 ° C. or higher.

Then, a photosensitive organic material including a black pigment is formed on the inner surface of the glass substrate 210 having a thickness of 0.05 mm to 0.7 mm, and exposed and developed by a photo process using a mask to form a black matrix (not shown). .

As shown in FIG. 3B, the photosensitive organic materials including the red, green, and blue pigments are sequentially applied to each other to form the red, green, and blue color filters 230 in order. The common electrode 270 is formed on the entire surface of the color filter 230 by stacking a transparent conductive material such as ITO or IZO.

As shown in FIG. 3C, an acrylic photosensitive organic material is coated and exposed and developed by a photo process using a mask to form a substrate spacer 320.

As shown in FIG. 3D, the upper alignment layer 21 is formed on the glass substrate 210 having the color filter 230 and the substrate spacer 320.

Next, a thermal process is performed on the adhesive tape 50 positioned between the glass substrate 210 and the substrate support 40. The thermal process proceeds as the end of the thermal process at a time when the adhesive force of the adhesive tape 50 is completely lost at a high temperature of 200 ° C or higher. Preferably, the thermal process is performed for about 10 seconds. FIG. 2A shows a cross section after the thermal process, in which the glass substrate 210 and the substrate support are separated by the loss of adhesion of the adhesive.

Next, a method of manufacturing a lower panel, that is, a thin film transistor array panel, of a liquid crystal display according to an exemplary embodiment of the present invention will be described in detail with reference to FIGS. 4 to 12B and FIGS. 1 to 2B.

4, 6, 8, and 10 are layout views in an intermediate step of a method of manufacturing a lower panel (opposing panel) in the liquid crystal display according to the exemplary embodiment of the present invention shown in FIGS. 1 to 2B, respectively. 5A and 5B are cross-sectional views of the thin film transistor array panel of FIG. 4 taken along a line Va-Va 'and Vb-Vb', respectively, and FIGS. 7A and 7B are respectively FIGS. Is a cross-sectional view of a thin film transistor array panel taken along lines VIIa-VIIa 'and VIIb-VIIb', and FIGS. 9A and 9B illustrate IXa-IXa 'and IXb-IXb' lines, respectively. 11A and 11B are cross-sectional views of the thin film transistor array panel of FIG. 10 taken along the lines XIa-XIa 'and XIb-XIb', respectively, and FIGS. 12A and 12B are respectively shown in FIG. 10. Thin film transistor panel cut along line XIa-XIa 'and XIb-XIb' A time limit cross-sectional view FIG. 11a and FIG 11b is a view of the following steps:

First, as shown in FIGS. 4 to 5B, a glass substrate is used on the outer surface of the glass substrate 110 having a thickness of 0.05 mm to 0.7 mm by using an adhesive tape 50 that loses adhesive strength at a high temperature of 200 ° C. or higher. The substrate support 40 supporting the 110 is bonded. In this case, the substrate support 40 may be made of any one of glass, metal, plastic, and ceramic, and may be attached to the glass substrate 110 by using an adhesive that loses adhesive strength at a high temperature of 200 ° C. or higher.

A plurality of gate lines 121 including a plurality of gate electrodes 124 are deposited by photolithography and depositing a conductive layer such as a metal on the inner surface of the glass substrate 110 to a thickness of 1,000 to 3,000 Å by a method such as sputtering. And a plurality of sustain electrode lines 131 including a plurality of extension parts 137.

As shown in FIGS. 6 to 7B, an intrinsic amorphous silicon layer and an impurity amorphous silicon layer are successively stacked on the gate insulating layer 140, and the impurity amorphous silicon layer and the intrinsic amorphous silicon layer are stacked. The layer is photo-etched to form a linear intrinsic semiconductor 151 each including a plurality of linear impurity semiconductors 164 and a plurality of protrusions 154.

As shown in FIG. 8 to FIG. 9B, a plurality of data lines 171, a plurality of drain electrodes 175, and a plurality of storage capacitor conductors 177 each including a plurality of source electrodes 173 are photographed. Form by etching.

Subsequently, a plurality of linear portions each including a plurality of protrusions 163 may be removed by removing portions of the impurity semiconductor 164 that are not covered by the data line 171, the drain electrode 175, and the storage capacitor conductor 177. The ohmic contact 161 and the plurality of islands of ohmic contact 165 are completed, while the portion of the intrinsic semiconductor 151 underneath is exposed. In this case, the upper layer portion of the protrusion 154 of the intrinsic semiconductor 151 may also be etched to a predetermined thickness, and it is preferable to carry out an oxygen plasma after stabilizing the surface of the exposed intrinsic semiconductor 151.

Next, as shown in FIGS. 10 to 11B, a passivation layer 180 having contact portions 182 and 187 exposing the end portion of the data line 171 and a part of the protrusion 177 of the drain electrode 175 is formed. .

12A and 12B, a plurality of pixel electrodes 190 and a plurality of contact auxiliary members 82 are formed by stacking IZO or ITO films by sputtering and photolithography to form a plurality of pixel electrodes 190 and a lower alignment layer 11 thereon. ). Here, when the material of the pixel electrode 190 and the contact auxiliary member 82 is IZO, a product called indium x-metal oxide (IDIXO) manufactured by Idemitsu, Japan may be used as a target, and may include In2O3 and ZnO. The content of zinc in the total amount of indium and zinc is preferably in the range of about 15-20 atomic%. In addition, it is preferable that the sputtering temperature of IZO is 250 ° C. or less in order to minimize contact resistance.

Next, a thermal process is performed on the adhesive tape 50 positioned between the glass substrate 110 and the substrate support 40. The thermal process proceeds as the end of the thermal process at a time when the adhesive force of the adhesive tape 50 is completely lost at a high temperature of 200 ° C or higher. Preferably, the thermal process is performed for about 10 seconds. FIG. 2A shows a cross section after a thermal process, in which the glass substrate 110 and the substrate support are separated by the loss of adhesion of the adhesive.

According to one embodiment of the present invention, a high temperature thermal process is performed on the upper panel and the lower panel, respectively, before the upper panel and the lower panel are joined to separate the substrate support from the upper panel and the lower panel. That is, before injecting the liquid crystal between the upper panel and the lower panel, a high temperature thermal process is performed on each of the panel to separate the substrate support.

On the other hand, in another embodiment of the present invention in the state that the substrate support is bonded to each of the upper display panel and the lower display panel, the two display panels are bonded to each other, the liquid crystal is injected therebetween, and the high temperature thermal process is performed on the two display panels. The substrate supports attached to each other can be separated from the two display panels.

In the method of manufacturing a liquid crystal display device according to an embodiment of the present invention, a plurality of processes are performed by attaching a substrate support to a thin glass substrate having a thickness of 0.05 mm to 0.7 mm, and then performing a plurality of processes for manufacturing a liquid crystal display device. When moving in order to prevent the thin glass substrate is bent or broken phenomenon. In addition, a plurality of thin glass substrates may be attached to one substrate support, thereby improving the manufacturing yield of the liquid crystal display device.

However, in the liquid crystal display device according to the embodiment of the present invention, the adhesive force is lost at high temperatures due to the adhesive material for bonding the thin glass substrate and the substrate support or the adhesive material of the adhesive tape. It is preferable to proceed at a low temperature below 200 ° C. in which the adhesive strength of the adhesive tape is not lost.

The driving characteristics of the liquid crystal display formed at a low temperature below 200 ° C will be described in more detail with reference to FIG. 13.

13 is a simulation diagram illustrating a simulation result of a liquid crystal display device formed by a low temperature process according to an embodiment of the present invention.

In general, a liquid crystal display device displays an image by switching a voltage applied to a pixel electrode using a thin film transistor that is a three-terminal element. Thus, as shown in FIG. 13, in the three terminals of the thin film transistor of the liquid crystal display device formed at a low temperature of less than 200 ° C according to the embodiment of the present invention, that is, a source, a drain, and a gate terminal, 0V, Applying a voltage of 10V to the terminal and sequentially changing the value of the voltage (Vg) applied to the gate terminal to simulate the liquid crystal display device to turn on / off the driving current (Id) which has the greatest influence on the driving of the liquid crystal display device Check the value. The value at which the driving current Id is turned on is 1.00E-06A or more, and the value at which the drive current Id is off is less than 1.00E-14A.

In addition, the driving capability of the thin film transistor formed at a low temperature of 150 ° C is obtained by comparing the driving current (Id) of the thin film transistor formed at a low temperature of 150 ° C with the driving current (Id) of the thin film transistor formed at a high temperature of 370 ° C. As shown in [Table 1], the on value of the driving current Id of the thin film transistor formed at a low temperature of 150 ° C. is 1.00E-06A or higher and the driving current Id of the thin film transistor formed at a high temperature of 370 ° C. Although it is lower than the on value of 2.00E-06A, the on / off value of the driving current Id is 10 ⁷ or more, indicating a driving ability to drive the liquid crystal display.

I _on I _off I _on / I _off 150 ℃ process 1.00E-06A or higher 1.00E-14A or less More than 10 ⁷ 370 ℃ process 2.00E-06A or later 1.00E-14A or less More than 10 ⁷

table

The liquid crystal display according to the exemplary embodiment of the present invention may be manufactured in various modified forms and methods.

Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

As described above, according to the present invention, by forming a liquid crystal display using a thin glass substrate having a thickness of 0.05 mm to 0.7 mm, the volume and weight of the liquid crystal display are reduced, thereby making it easier to carry.

In addition, by adhering and supporting the thin glass substrate to the substrate support, a plurality of processes for forming a liquid crystal display may be performed to prevent the thin glass substrate from being bent or broken when moving to perform a plurality of processes.

Claims (8)

Adhering the substrate support to the outer surface of the glass substrate having a thickness of 0.05 mm to 0.7 mm, Forming a plurality of thin film layers on the glass substrate, Separating the substrate support from the glass substrate, The separating of the substrate support from the glass substrate uses a thermal process or an infrared irradiation process. In claim 1, The substrate support is a method of manufacturing a display panel for a display device using a glass, metal, plastic, or any one of a ceramic. In claim 1, Bonding the substrate support to the outer surface of the glass substrate is a method of manufacturing a display panel for a display device using an adhesive or adhesive tape that loses the adhesive strength at a high temperature of 200 ℃ or more. delete In claim 1, Forming a plurality of thin film layers on the glass substrate Forming a gate line on the glass substrate, Forming a gate insulating film on the gate line; Forming a semiconductor layer on the gate insulating film, Forming a data line and a drain electrode on the semiconductor layer; Forming a passivation layer covering the data line and the drain electrode and having a contact hole; Forming a pixel electrode connected to the drain electrode through the contact hole on the passivation layer. In claim 1, Forming a plurality of thin film layers on the glass substrate Forming a black matrix on the glass substrate to partition the pixel region; Forming a color filter in each of the pixel regions; A method of manufacturing a display panel for a display device, the method comprising forming a common electrode on the color filter. Adhering a first substrate support to an outer surface of a first glass substrate having a thickness of 0.05 mm to 0.7 mm, forming a plurality of thin film transistors and pixel electrodes on an inner surface of the first glass substrate, Adhering a second substrate support to an outer surface of the second glass substrate having a thickness of 0.05 mm to 0.7 mm, forming a color filter, a black matrix, and a common electrode on the inner surface of the second glass substrate, Bonding and bonding the inner surface of the first glass substrate and the inner surface of the second glass substrate, Separating the first substrate support and the second substrate support from the first glass substrate and the second glass substrate, respectively, The separating of the first substrate support and the second substrate support from the glass substrate uses a thermal process or an infrared irradiation process. In claim 7, Bonding the substrate support to the outer surface of the glass substrate is a method of manufacturing a liquid crystal display device using an adhesive or adhesive tape that loses the adhesive force at a high temperature of 200 ℃ or more.

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