KR100983730B1 - Led manufacturing machine - Google Patents

Abstract

PURPOSE: An LED manufacturing device is provided to improve the deposit efficiency of a semiconductor layer by controlling current and the amount of reaction gas flowed through a first duct. CONSTITUTION: A reacting gas supply unit supplies a reaction gas into a chamber(10). A gas discharge unit(20) discharges the gas inside the chamber to the outside. A high frequency-induction coil or a dielectric electrode is installed on the outside of the chamber. Boats are installed in the center of the chamber. A driving unit(50) drives the boats.

Description

LED Manufacturing Machine {LED Manufacturing Machine}

The present invention relates to MOCVD (Metal Organic Chemical Vapor Deposition) equipment, which is a metal organic vapor deposition method used to manufacture LEDs, and more particularly, to an LED manufacturing apparatus capable of significantly increasing the yield of LEDs.

Light emitting diodes, commonly called LEDs (Light Emitting Diodes), are manufactured by stacking semiconductor layers on a substrate such as Si, GaAs, or sapphire using compound materials such as GaAs, AlGaAs, GaN, InGaN, and AlGaInP. Done.

1 is a schematic structural diagram of a manufacturing apparatus for manufacturing LED currently being used.

In FIG. 1, a showerhead 2 for discharging reaction gas into the chamber 1 is installed above the chamber 1 and a susceptor 4 on which a wafer is placed below the showerhead 2. ) Is installed. The shower head 2 is coupled with one or more inlet tubes 3 for introducing a reaction gas, a source, and the like, and a plurality of wafer holders 4a for stably disposing a substrate on the upper side of the susceptor 4. do. Inside the susceptor 4, a heater for heating the wafer is incorporated. In addition, the inner wall of the chamber (1) is provided with a structure (6) for blocking the influence of the external temperature, the discharge pipe for discharging the reaction gas in the chamber (1) to the outside on one side of the chamber (1) (5) is combined. In addition, a driving means 7 for rotating the susceptor 4 is coupled to the lower part of the susceptor 4.

In the manufacturing apparatus having the above-described structure, after placing the wafer in the wafer holder 4a of the susceptor 4, the heater is driven through the shower head 2 while maintaining a proper reaction temperature inside the chamber 1 by driving a heater. By continuously supplying the reaction gas, the desired semiconductor layer is sequentially deposited on the wafer.

By the way, in the above-mentioned LED manufacturing apparatus, there exists a following problem.

In general, when manufacturing an LED, a plurality of semiconductor layers such as an N-type layer, a P-type layer, and an active layer are formed on a wafer, and the semiconductor layer is deposited by, for example, metal organic chemical vapor deposition (MOCVD). . Because of this, the manufacture of LEDs is very time consuming.

Typically, it takes about 8-10 hours to manufacture an LED on one wafer.

That is, the number of times the LED can be manufactured using one LED manufacturing apparatus is limited to approximately 2-2.5 times a day.

On the other hand, the LED manufacturing apparatus shown in Figure 1 is to place the wafer on the upper side of the susceptor (4), wherein the horizontal area of the susceptor (4) is limited to a predetermined size or less to be placed on the susceptor (4) at a time The number of possible wafers is limited to approximately 15 sheets for 4 inch wafers and approximately 6 sheets or less for 6 inch wafers.

Therefore, the above-described conventional LED manufacturing apparatus is limited to the number of wafers that can be produced in one day within about 30-45 sheets based on 4 inch wafer, about 12-18 sheets based on 6 inch wafer.

For this reason, in order to mass-produce LEDs, a large number of manufacturing apparatuses must be provided. However, since the LED manufacturing apparatus is very high in price, it requires a large amount of facility funds to have facilities for manufacturing LEDs in large quantities.

That is, in the case of the conventional LED manufacturing apparatus, it is difficult to mass-produce the LED, and the manufacturing cost of the LED is high because the production efficiency per manufacturing apparatus is low.

Accordingly, the present invention has been made in view of the above circumstances, and an object thereof is to provide an LED manufacturing apparatus capable of producing a large amount of LEDs with a simple structure.

LED manufacturing apparatus according to the present invention for achieving the above object is a chamber, a reaction gas supply means for supplying a reaction gas or source into the chamber, gas discharge means for discharging the gas inside the chamber to the outside, the A high frequency heating device installed outside the chamber, a boat installed at an inner central portion of the chamber, and a driving means for rotationally driving the boat, wherein each boat is provided with at least one wafer holder. It is made of a multi-layer structure, the plate is made of a high frequency absorbent material, characterized in that the high frequency device is supplied with a high frequency current.

In addition, the chamber is characterized in that composed of quartz.

In addition, the plate is characterized by consisting of a high frequency absorbent material.

In addition, the outer surface of the plate is characterized in that the impurity prevention film is coated.

In addition, the reaction gas supply means is provided with a first duct which is installed inside the chamber and has one or more pores communicating with the inside of the chamber, and the inlet pipe for supplying the reaction gas to the first duct from the outside of the chamber is configured It is characterized by.

In addition, the first duct is characterized in that composed of quartz.

In addition, the gas discharge means is provided with a second duct provided with one or more pores communicated with the inside of the chamber and is installed inside the chamber, characterized in that it comprises a discharge pipe for discharging the reaction gas to the outside of the chamber.

In addition, the reaction gas supply means is provided with a third duct which is installed at the outside of the chamber and in communication with the inside of the chamber is provided, and the inlet pipe for supplying the reaction gas to the third duct from the outside of the chamber It is characterized by.

In addition, the reaction gas supply means is characterized in that consisting of a tube made of quartz.

According to the present invention having the above-described configuration, since the semiconductor layer is formed by directly heating the wafer for forming the semiconductor layer through a high frequency heating method, the deposition efficiency of the desired semiconductor layer can be greatly increased. There are two types of high frequency heating methods using a high frequency induction coil and a high frequency dielectric electrode.

In addition, according to the present invention, the deposition thickness of the semiconductor layer can be set very precisely through a method of properly controlling the amount of current supplied through the high frequency heating device and the amount of reaction gas supplied through the first duct.

In addition, according to the present invention, by increasing the number of plates constituting the boat, it is possible to simultaneously form LEDs for a large number of wafers. Therefore, the number of LEDs that can be produced within a unit time can be greatly increased, and the manufacturing cost of the LED can be significantly reduced.

1 is a view schematically showing a general LED manufacturing apparatus.
2 is a view schematically showing the structure of an LED manufacturing apparatus according to an embodiment of the present invention.
FIG. 3 is a view showing the main part structure when the LED manufacturing apparatus shown in FIG. 2 is viewed from above, where the gas supply device is located inside the quartz tube.
FIG. 4 is a view showing the main part structure when the LED manufacturing apparatus shown in FIG. 2 is viewed from above, in which the gas supply device is located outside the quartz tube.

Hereinafter, an embodiment according to the present invention will be described with reference to the drawings. However, the embodiments described below show one preferred embodiment of the present invention, and examples of such embodiments are not intended to limit the scope of the present invention. The present invention can be carried out in various modifications without departing from the spirit thereof.

2 is a view schematically showing the structure of the LED manufacturing apparatus according to an embodiment of the present invention, Figure 3 and Figure 4 is a view showing the main structure when the LED manufacturing apparatus shown in FIG.

In the figure, reference numeral 10 is a chamber. The chamber 10 is made of quartz and has a cylindrical shape, for example. Outside the chamber 10, a high frequency induction coil 11 is wound with a high frequency induction coil made of a conductor such as copper or two electrodes of a high frequency dielectric electrode. High frequency alternating current is supplied to this high frequency heating apparatus 11 as described later.

The inner side of the chamber 10 is provided with a first duct 20 for supplying a reaction gas into the chamber 10. The first duct 20 is made of quartz like the chamber 10. The first duct 20 is formed with a plurality of pores 21 in communication with the internal space of the chamber 10, the lower side of the first duct 20, the reaction gas or source from the outside from the first duct 20 At least one or more inlet pipes 22 for supplying inwardly communicate with each other. The installation position of this inlet pipe 22 is not limited to a specific place, For example, it can also install in the upper side of the chamber 10. As shown in FIG.

In addition, a second duct 30 for discharging the gas inside the chamber 10 to the outside is provided on a side surface of the chamber 10 that faces the first duct 20. Like the first duct 20, the second duct 30 is made of quartz, and a plurality of pores 31 are formed in communication with the internal space of the chamber 10. In addition, a discharge pipe 32 for discharging the gas inside the second duct 30 to the outside of the chamber 10 communicates with the lower side of the second duct 30. Although not specifically shown in the drawings, the discharge pipe 32 is coupled to the vacuum pump.

The first duct 20 and the inlet pipe 22 constitute a reaction gas supply means for supplying a reaction gas or a source into the chamber 10, and the second duct 30 and the discharge pipe 32. Is to constitute a gas discharge means for discharging the gas in the chamber 10 to the outside. As the reaction gas supply means and the gas discharge means, for example, a tube made of quartz can be used.

The wafer boat 40 is installed in the inner center portion of the chamber 10. The wafer boat 40 is rotationally driven by, for example, driving means 50 such as a motor. Although the driving means 50 is illustrated as being installed outside the chamber 10 in the drawing, it is also possible to install it in the chamber 10.

The boat 40 is configured with four pillars 41 made of, for example, quartz and a plurality of plates 42 supported and installed by the four pillars. At this time, the plurality of plates 42 are installed in the vertical direction along the pillar 41 to form a multi-layer structure.

The plate 42 is made of a conductive material such as carbon, preferably carbon coated with silicon carbide (SiC), and a wafer holder 43 for seating a wafer is provided at the center portion of the plate 42.

In addition, although not shown in detail in the drawings, the LED manufacturing apparatus is provided with a controller for controlling the operation of the entire apparatus, and regulates or supplies the reaction gases supplied to the chamber 10 through the inlet pipe 22. Valves for adjustment are provided. These configurations or operations are substantially the same as those provided in the conventional LED manufacturing apparatus.

However, in the case of the controller, the temperature inside the chamber 10 is appropriately set by appropriately controlling the amount of the high frequency current supplied to the high frequency heating device 11 according to the process conditions input by the user through the control panel.

In the above LED manufacturing apparatus, the controller supplies a high frequency alternating current to the high frequency heating device 11, and the case of using the high frequency induction coil as an example, the high frequency induction coil 11 wound on the outside of the chamber 10 An alternating magnetic force line is formed from the alternating magnetic force line and penetrates vertically through the boat 40 inside the chamber 10.

As described above, the plate 42 constituting the boat 40 is made of a material having electrical conductivity, such as carbon. When alternating magnetic lines of force are generated from the high frequency induction coil 11, the plate 42 is rapidly heated by the overcurrent induced by the electromagnetic induction action and the heat loss of hysteresis. Then, heat generated in the plate 42 is transferred to the wafer placed on the wafer holder 43 to heat the wafer.

When the wafer is heated to an appropriate temperature, a desired semiconductor layer is formed on the wafer by the reaction of the reaction gas and the source supplied through the first duct 20. When the semiconductor layer is deposited to the desired type and thickness, the supply of the reaction gas through the first duct 20 is interrupted and the supply of the high frequency current to the high frequency induction coil 11 is stopped, and the discharge pipe 32 The deposition operation is terminated by executing the process of discharging the gas inside the chamber 10 through the.

In the above embodiment, since the semiconductor layer is formed by directly heating the wafer for forming the semiconductor layer, the deposition efficiency of the desired semiconductor layer can be greatly increased.

In addition, in the above embodiment, the deposition thickness of the semiconductor layer is precisely controlled by a method of properly controlling the amount of current supplied through the high frequency induction coil 11 and the amount of reaction gas supplied through the first duct 20. It can be set.

In addition, in the above embodiment, LEDs can be simultaneously formed on a large number of wafers by increasing the number of plates 42 constituting the boat 40. Therefore, the number of LEDs that can be produced within a unit time can be greatly increased, and the manufacturing cost of the LED can be significantly reduced.

In addition, this invention is not limited to the said Example, It can be variously modified and implemented.

4 is a plan view showing the structure of an LED manufacturing apparatus according to another embodiment of the present invention. In the above-described embodiment of FIGS. 2 and 3, the first and second ducts 20 and 30 are formed inside the chamber 10. In this embodiment, the first and second ducts 20 and 30 are formed outside the chamber 10. The second ducts 20 and 30 are provided. In addition, since the other parts are the same as the above-mentioned embodiment, the same reference numerals are attached to the same parts as the above-described embodiment, and the detailed description thereof will be omitted.

In addition, in the above-described embodiment, the second duct 30 is installed to discharge the gas inside the chamber 10, but as in the conventional configuration shown in FIG. It is also possible to implement to discharge the gas inside the chamber 10.

In the above-described embodiment, one wafer holder 43 is provided on each plate 42 constituting the boat 40. However, a plurality of wafer holders 43 are provided on one plate 42. It is also possible to install).

In addition, the number of the plates 42 constituting the boat 40 is not limited to a specific value, but may be appropriately modified as necessary.

In addition, the material constituting the chamber 10 and the boat 40 is not limited to quartz and any other material that is not heated by the high frequency induction coil 11 may be used.

10: chamber, 20, 30: duct,
11: high frequency induction coil, 21, 31: pore.
22: inlet pipe, 32: outlet pipe,
40: boat, 41: pillar,
42: plate, 43: wafer holder,
50: driving means

Claims (9)

Chamber 10,
Reaction gas supply means for supplying a reaction gas into the chamber 10,
Gas discharge means for discharging the gas inside the chamber 10 to the outside,
A high frequency induction coil or dielectric electrode installed outside the chamber 10,
Boat 40 is installed in the inner central portion of the chamber 10,
It comprises a drive means 50 for driving the boat 40 in rotation,
The boat 40 has a multi-layered structure of a plate 42, each of which is provided with at least one wafer holder 43,
The plate 42 is made of a conductive material,
In the LED manufacturing apparatus is supplied with a high frequency current to the high frequency induction coil,
The chamber 10 is made of quartz,
The plate 42 is made of silicon carbide (SiC) coated carbon, the central portion of the plate 42 is provided with a wafer holder 43 for seating the wafer,
The reaction gas supply means is installed inside the chamber 10 and has a first duct 20 having one or more pores 21 communicating with the inside of the chamber 10, and the first duct from the outside of the chamber 10. It is comprised by the inlet pipe 22 which supplies reaction gas to 20,
The first duct 20 is made of quartz,
The gas discharge means is installed inside the chamber 10 and has a second duct 30 having one or more pores 31 communicating with the inside of the chamber 10, and discharges the reaction gas to the outside of the chamber 10. It is provided with the discharge pipe 32,
The reaction gas supply means is composed of a tube made of quartz,
The plate 42 is supported and installed by four pillars 41 made of quartz,
A controller for controlling the operation of the LED manufacturing apparatus is provided,
It is provided with a valve for regulating the supply gas or regulate the supply amount of the reaction gas supplied to the chamber 10 through the inlet pipe 22,
LED discharge apparatus characterized in that the vacuum pipe is coupled to the discharge pipe (32).
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