KR100934993B1 - Stand for wafer defect inspection - Google Patents

Abstract

For the defect inspection pedestal of the wafer according to the present invention is formed on the top of the inner set the edge of the wafer is arranged and the outer edge is formed with a groove fixed to the inspection equipment and nickel (Ni) 30 ~ 38 wt%, cobalt ( Co) 3 ~ 5 wt%, silicon (Si) 0.3 ~ 1 wt%, manganese (Mn) 0.2 ~ 0.4 wt%, carbon (C) 0.01 ~ 0.07 wt%, residual Fe, thermal expansion of the test results of the harsh test The coefficient was 1.61, which shows that the coefficient of thermal expansion of similar Japanese products used by Samsung Electronics and Hynix in Korea is much lower than 5.5, and localized the pedestal for inspection of wafer defects, which was solved by importing the whole quantity. As well as saving, the raw material is manufactured by casting and processing the material close to the required shape, minimizing the amount of chips generated and unnecessary and relying on the total amount of imports during the manufacturing of the material. By minimizing the waste of resources for the components, more valuable resources can be used efficiently, and the manufacture and processing of materials can be carried out domestically, and the use of available human resources and equipment can be used. There are various excellent effects, such as improving the efficiency.

Description

Stand for wafer defect inspection {A prop}

The present invention relates to a pedestal for defect inspection of a wafer. More specifically, the wafer is placed on a surface where a plurality of integrated circuits having electronic components mounted thereon are manufactured, and the defects of the plurality of integrated circuits in the wafer are increased. When the pedestal to inspect the condition is tested for the harsh test from the cold temperature of minus 40 ° C. to the high heat condition of 170 ° C., the thermal expansion coefficient with almost no change in thermal contraction or thermal expansion despite the large temperature variation in the harsh test A pedestal for defect inspection of a wafer which can be kept low.

In general, a wafer used as a basic material for manufacturing a basic semiconductor in the semiconductor industry produces silicon by growing silicon to form silicon rods and cutting them at regular intervals. Since semiconductor processes require high accuracy, many wafers are completely unused in one mistake. For this reason, out-of-spec wafers or low yield wafers should be picked out immediately. Therefore, as the wafer passes through each process, various tests and evaluations are required. In general, the contamination detection of the wafer during the test is essential for high yield and contamination control of the wafer, and such contamination can be seen through the naked eye or through a microscope. The most common simple test method in the current manufacturing line is the visual inspection of the wafer. That's how.

The wafer visual inspection can check the contamination of a very small piece by using a particularly shiny property when the dust particles at a particular angle in parallel white light, or by using a short wavelength of light and a monochromatic characteristic. Contamination of the wafer can be confirmed more accurately through a metal microscope or an electron microscope to obtain more information.

The wafer that passes the inspection process undergoes various processes to form a plurality of integrated circuits in which a plurality of electronic components are mounted. Thus, the wafer on which the plurality of integrated circuits are formed is placed on a wafer inspection stand for freezing. Since it is judged whether the failure of each integrated circuit is caused by the harsh test of the severe temperature of 170 ℃ and the high temperature of 170 ℃, the stand for the defect inspection of the wafer to be subjected to the harsh test by mounting such a wafer must have a very low coefficient of thermal expansion. Until now, products made in Japan were used. Since these Japanese products are very expensive, localization is very urgent, and these Japanese products are almost impossible to manufacture because the ingredients of the materials used are not disclosed and the ingredients of the materials are kept secret. Among the Japanese products, the material for the defect inspection support for wafers sold under the trade name 'nobinite' at Enomoto Chugo Show is C 2.52 wt%, Si 2.35 wt%, Mn 0.13 wt%, P 0.015 wt%, S 0.029 wt%, Ni 29.57 wt%, Mg 0.08 wt%, residual Fe has been proposed, but the pedestal has a coefficient of thermal expansion of about 5.5 X 10 ^-6 / ℃, gradually increasing the size of the wafer Increasingly, the emergence of a pedestal for defect inspection of wafers having a smaller thermal expansion coefficient is urgently required. In addition, even if the material of such support is imported into Korea and processed, the square material is imported and processed irrespective of the shape of the product. Since nearly half of the materials are consumed as chips in the process, wasteful raw materials are wasted and resources are wasted unnecessarily in the country.

The object of the present invention is to solve such problems and localize the defect inspection pedestal of the wafer, which has been solved by importing the whole quantity, thereby saving valuable foreign currency and saving foreign currency. By processing this, it is possible to use more valuable resources efficiently by minimizing the amount of chips generated and minimizing the waste of resources for components such as nickel, which are unnecessary and relying on total imports during the manufacture of materials. Since the processing can be performed in Korea, the available manpower resources and equipment can be used, thus providing a stand for wafer defect inspection that can provide various excellent effects such as improving the use efficiency of manpower and equipment. It is.

This object of the present invention is formed on the upper side of the inner edge of the wafer is formed is formed and the outer edge is formed grooves fixed to the inspection equipment and nickel (Ni) 30 ~ 38 wt%, cobalt (Co) 3 ~ 5 Achieved by the defect inspection pedestal according to the present invention consisting of wt%, silicon (Si) 0.3-1 wt%, manganese (Mn) 0.2-0.4 wt%, carbon (C) 0.01-0.07 wt%, balance Fe do.

The defect inspection pedestal of the wafer according to the present invention is formed on the top of the inner set the edge of the wafer is arranged and the outer edge is formed with a groove fixed to the inspection equipment and nickel (Ni) 30 ~ 38 wt%, cobalt ( Co) 3 ~ 5 wt%, silicon (Si) 0.3 ~ 1 wt%, manganese (Mn) 0.2 ~ 0.4 wt%, carbon (C) 0.01 ~ 0.07 wt%, residual Fe, thermal expansion of the test results of the harsh test The coefficient was 1.61, which shows that the coefficient of thermal expansion of similar Japanese products used by Samsung Electronics and Hynix in Korea is much lower than 5.5, and localized the pedestal for inspection of wafer defects, which was solved by importing the whole quantity. As well as saving, the raw material is manufactured by casting and processing the material close to the required shape, minimizing the amount of chips generated and unnecessary and relying on the total amount of imports during the manufacturing of the material. By minimizing the waste of resources for the components, more valuable resources can be used efficiently, and the manufacture and processing of materials can be carried out domestically, and the use of available human resources and equipment can be used. There are various excellent effects, such as improving the efficiency.

As shown in FIGS. 1 and 2, the pedestal A for inspecting a defect of a wafer according to an exemplary embodiment of the present invention includes a lower stand 10 having an edge 11 on which an edge of the wafer B is disposed. It is formed on the inner side of the upper side, the outer edge of the groove 12 is fixed to the inspection equipment is formed.

Pedestal (A) for defect inspection of the wafer is nickel (Ni) 30 ~ 38 wt%, cobalt (Co) 3 ~ 5 wt%, silicon (Si) 0.3 ~ 1 wt%, manganese (Mn) 0.2 ~ 0.4 wt% , Carbon (C) 0.01 to 0.07 wt%, the balance Fe.

Nickel is similar to iron in strength and strength, but its resistance to oxidation and corrosion is closer to copper, and due to its duality, it is used for various purposes. About 1/2 of the nickel produced is used in alloys with iron, and about 1/4 is used in high-quality nickel alloys, such as corrosion-resistant alloys with copper and heat-resistant alloys with chromium, such as monel metal. In the present invention, nickel is the most important component for lowering the coefficient of thermal expansion. If the Ni is 30 wt% or less, the coefficient of thermal expansion is high and cannot be used for the present invention. If the Ni is 38 wt% or more, the cost is high and the manufacturing cost is high. In addition, the coefficient of thermal expansion is high so that it cannot be used for the purposes of the present invention, the content of Ni in the present invention was limited to 30 to 38 wt%.

The cobalt is a silvery white metal similar to iron or nickel, and is stable for only a long time at room temperature. Incandescent (白熱) burns and becomes cobalt oxide. Moss firmness is 5.6, and malleability and ductility are about the same as iron and ferromagnetic. High-speed steel capable of cutting at high speeds, hard tool alloys (such as stellite) that can be used as they are cast, sintered carbide alloys (tongue alloys, etc.) resulting from the sintering of hard carbides such as cobalt and tungsten carbide, and permanent magnets It is used as a material. In the present invention, the cobalt is used to lower the coefficient of thermal expansion, and cobalt is vaporized at 1700 ° C. below 3 wt%, so that the coefficient of thermal expansion is not lowered to a sufficient value. In the present invention, the content of cobalt was limited to a range of 3 to 5 wt%.

The silicon is contained in the molten metal to prevent the air bubbles caused by the hydrogen generating bubbles. If the amount is less than 0.3 wt%, bubbles are generated due to hydrogen, and the strength is lowered. The excessive reaction with and the hydride is overproduced, the strength of the product is weak, in the present invention, the silicon content was limited to 0.3 ~ 1.0 wt%.

The manganese is used to increase the dehydrogenation effect and hardness, the dehydrogenation effect is lowered at 0.2 wt% or less and the hardness is too high at 0.4 wt% or more, so that the workability is lowered, the content of manganese is 0.2 to 0.4 Limited to wt%.

The carbon is contained in the fluid for fluidity, but it is set to 0.01 wt% or more according to the principle that it is almost difficult to manufacture and extremely low at less than 0.01 wt%, and the fluidity of the product is increased at 0.07 wt% or more. Since the hardness of the lower the content of the carbon in the present invention was limited to 0.01 ~ 0.07 wt%.

Example 1

In the present invention, a sample of a pedestal for defect inspection of a wafer having Ni 32.6 wt%, Co 4.18 wt%, Si 0.31 wt%, Mn 0.24 wt%, C 0.046 wt%, and residual Fe was prepared.

As a result of using such a sample at a temperature of 40 to 200 ° C., as shown in FIGS. 3A, 3B, and 3C, the coefficient of thermal expansion was 1.61 × 10 ⁻⁶ / ° C., indicating that the coefficient of thermal expansion was 1/3 to 1 than that of similar Japanese products. It became low as / 4. That is, under the same conditions, the thermal expansion coefficient of the nobinite product of Enomoto Chugo-Osho Co., Ltd. described in the prior art is about 5.5 X 10 ^-6 / ° C, which is 1/3 to 1/4 lower than that of similar Japanese products. I lost. Therefore, in the case of a Japanese inspection product having a wafer inspection quantity of about 50,000 sheets, the inspection quantity of the wafer defect inspection pedestal according to the present invention is about 100,000 to 150,000 sheets.

The pedestal for defect inspection of the wafer according to the present invention will be said to be industrially available because it can be repeatedly reproduced.

1 is a perspective view of a pedestal for defect inspection of a wafer according to the present invention

2 is a schematic longitudinal cross-sectional view taken along line I-I of FIG. 1 of a pedestal for defect inspection of a wafer according to the present invention;

3A, 3B, and 3C are a table of components, a thermal expansion coefficient, and a graph at the time of a test report of a pedestal for defect inspection of a wafer according to the present invention;

Explanation of symbols on the main parts of the drawings

A. Wafer defect inspection base B. Wafer

11.Braces 12. Home

Claims (1)

In the pedestal A for defect inspection of a wafer, The pedestal for defect inspection of the wafer (B) is formed on the inside of the upper portion of the lower plane 10, the support base 11 is formed with the edge of the wafer is formed, the outer edge is formed with a groove 12 fixed to the inspection equipment Nickel (Ni) 30 to 38 wt%, Cobalt (Co) 3 to 5 wt%, Silicon (Si) 0.3 to 1 wt%, Manganese (Mn) 0.2 to 0.4 wt%, Carbon (C) 0.01 to 0.07 wt Pedestal for defect inspection of the wafer, characterized in that the remaining amount, Fe.

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