KR100928561B1 - 생체물질 기반 전자 디바이스 - Google Patents
생체물질 기반 전자 디바이스 Download PDFInfo
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- KR100928561B1 KR100928561B1 KR1020070135948A KR20070135948A KR100928561B1 KR 100928561 B1 KR100928561 B1 KR 100928561B1 KR 1020070135948 A KR1020070135948 A KR 1020070135948A KR 20070135948 A KR20070135948 A KR 20070135948A KR 100928561 B1 KR100928561 B1 KR 100928561B1
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0019—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising bio-molecules
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/50—Bistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/761—Biomolecules or bio-macromolecules, e.g. proteins, chlorophyl, lipids or enzymes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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Abstract
Description
Claims (10)
- 산화환원능(redox potential)을 가지는 생체물질이 직접 기판에 고정화 되어 있는 생체물질 기반 전자 디바이스로서, 상기 생체물질은 산화환원능을 가지는 재조합 단백질이고, 상기 재조합 단백질의 N-말단 또는 C-말단에는 시스테인 잔기가 도입되어 있으며, 상기 도입된 시스테인 잔기의 티올기를 통하여 상기 재조합 단백질이 기판에 직접 고정화되고, 상기 생체물질 기반 전자 디바이스는 바이오-메모리 디바이스인 것을 특징으로 하는 생체물질 기반 전자 디바이스.
- 삭제
- 삭제
- 제 1 항에 있어서, 상기 재조합 단백질에 도입된 시스테인 잔기의 수는 1 내지 10개인 것을 특징으로 하는 생체물질 기반 전자 디바이스.
- 제 4 항에 있어서, 상기 시스테인 잔기의 수는 2 또는 3개인 것을 특징으로 하는 생체물질 기반 전자 디바이스.
- 제 1 항에 있어서, 상기 산화환원능을 갖는 재조합 단백질은 금속 이온을 포함하는 금속단백질(metalloprotein)인 것을 특징으로 하는 생체물질 기반 전자 디바이스.
- 제 6 항에 있어서, 상기 금속단백질은 아주린, 사이토크롬 a, 사이토크롬 b, 사이토크롬 c, 사이토크롬 산화효소, 카탈라아제, 니트로게나아제, 하이드로게나아제, 글루코오스 6-포스파타아제, 헥소키나아제, 알기나아제, 니트레이트 환원효소, 우레아제, 글루타티온 퍼옥시다아제, 알코올 디하이드로게나아제, 카보닉 언하이드라아제 또는 DNA 폴리머라아제인 것을 특징으로 하는 생체물질 기반 전자 디바이스.
- 제 1 항에 있어서, 상기 기판은 금속, 금속 옥사이드, 유리, 세라믹, 석영, 실리콘, 반도체, Si/SiO2 웨이퍼, 게르마늄, 갈륨 아르세나이드, 카본, 탄소나노튜 브, 폴리머, 세파로스 또는 아가로스인 것을 특징으로 하는 생체물질 기반 전자 디바이스.
- 제 8 항에 있어서, 상기 기판은 금(Au) 기판인 것을 특징으로 하는 생체물질 기반 전자 디바이스.
- 제 1 항에 있어서, 상기 바이오-메모리 디바이스는 환원 전위, 개회로 전위 및 산화 전위의 인가에 의해 작동되는 것을 특징으로 하는 생체물질 기반 전자 디바이스.
Priority Applications (3)
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KR1020070135948A KR100928561B1 (ko) | 2007-12-22 | 2007-12-22 | 생체물질 기반 전자 디바이스 |
US12/809,646 US8692233B2 (en) | 2007-12-22 | 2008-04-17 | Biomolecule-based electronic device |
PCT/KR2008/002168 WO2009082064A1 (en) | 2007-12-22 | 2008-04-17 | Biomolecule-based electronic device |
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KR1020070135948A KR100928561B1 (ko) | 2007-12-22 | 2007-12-22 | 생체물질 기반 전자 디바이스 |
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KR20090068075A KR20090068075A (ko) | 2009-06-25 |
KR100928561B1 true KR100928561B1 (ko) | 2009-11-25 |
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US (1) | US8692233B2 (ko) |
KR (1) | KR100928561B1 (ko) |
WO (1) | WO2009082064A1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150123373A (ko) * | 2014-04-24 | 2015-11-04 | 서강대학교산학협력단 | 융합 단백질-기반 이중상 바이오메모리 장치 |
US11152082B2 (en) | 2020-01-16 | 2021-10-19 | Hongik University Industry-Academia Cooperation Foundation | Protein memory cell and protein memory system |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2012050646A2 (en) | 2010-06-29 | 2012-04-19 | The Trustees Of The University Of Pennsylvania | Biomimetic chemical sensors using nanoelectronic readout of olfactory receptors |
KR101390328B1 (ko) | 2011-07-29 | 2014-05-02 | 서강대학교산학협력단 | 다기능성 바이오-메모리 디바이스 |
WO2013033359A1 (en) * | 2011-08-31 | 2013-03-07 | The Trustees Of The University Of Pennsylvania | Carbon nanotube biosensors and related methods |
KR101360407B1 (ko) * | 2011-12-16 | 2014-02-11 | 서강대학교산학협력단 | 재조합 단백질 및 무기입자 이중층을 포함하는 바이오-메모리 디바이스 |
WO2016036950A1 (en) | 2014-09-05 | 2016-03-10 | The Trustees Of The University Of Pennsylvania | Volatile organic compound-based diagnostic systems and methods |
KR101725369B1 (ko) * | 2015-02-27 | 2017-04-12 | 서강대학교산학협력단 | 바이오-논리 소자 |
GB2566516A (en) | 2017-09-15 | 2019-03-20 | Univ Oxford Innovation Ltd | Electrochemical recognition and quantification of cytochrome c oxidase expression in bacteria |
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JPS63177452A (ja) * | 1987-01-16 | 1988-07-21 | Seiko Epson Corp | バイオ・メモリ− |
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WO2000006244A2 (en) * | 1998-07-30 | 2000-02-10 | Hainfeld James F | Loading metal particles into cell membrane vesicles and metal particle use for imaging and therapy |
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2008
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- 2008-04-17 US US12/809,646 patent/US8692233B2/en not_active Expired - Fee Related
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20150123373A (ko) * | 2014-04-24 | 2015-11-04 | 서강대학교산학협력단 | 융합 단백질-기반 이중상 바이오메모리 장치 |
KR101627832B1 (ko) | 2014-04-24 | 2016-06-08 | 서강대학교산학협력단 | 융합 단백질-기반 이중상 바이오메모리 장치 |
US11152082B2 (en) | 2020-01-16 | 2021-10-19 | Hongik University Industry-Academia Cooperation Foundation | Protein memory cell and protein memory system |
Also Published As
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US8692233B2 (en) | 2014-04-08 |
US20100270543A1 (en) | 2010-10-28 |
WO2009082064A1 (en) | 2009-07-02 |
KR20090068075A (ko) | 2009-06-25 |
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