KR100927430B1 - Gas sensor chip using surface plasmon resonance and its manufacturing method - Google Patents

Abstract

The present invention relates to a gas sensor using Surface Plasmon Resonance (hereinafter referred to as 'SPR').

The gas sensor of the present invention is a gas sensor manufactured to detect gas by reflecting light incident from the light emitting part and measuring surface plasmon waves (SPW) changed in the light receiving part. An optical member having a prism structure for reflecting the light to a light receiving unit, a multilayer metal layer causing surface plasmon resonance by the incident light, a sensing layer deposited on the metal layer to change a surface plasmon wave (SPW), and sensing a gas, the multilayer A polymer layer is provided between the metal layer and the sensing layer to amplify the surface plasmon wave signal.

In the gas sensor according to the present invention, the metal layer is multi-layered so that the SPR curve is very sharp to increase the sensitivity of the measurement, and at the same time, by amplifying the surface plasmon wave (SPW) by the polymer layer, thereby reducing the thickness limitation of the sensing layer. This allows for a structure in which the layer can react sufficiently with the gas.

SPR, Surface Plasmon Resonance, Gas Sensor, Polymer, Metal Layer, Sensing Layer

Description

Gas sensor chip using surface plasmon resonance and manufacturing method thereof {GAS SENSOR CHIP USING SURFACE PLASMON RESONANCE AND ITS MANUFACTURING METHOD}

The present invention relates to a gas sensor chip using Surface Plasmon Resonance (hereinafter referred to as 'SPR'), and more particularly, to a gas using surface plasmon resonance which has increased sensitivity and improved stability by an improved structure. It relates to a sensor chip and a method of manufacturing the same.

Surface plasmon is a collective charge density oscillation of electrons occurring on the surface of a metal thin film, and surface plasmon waves (SPW) generated by these vibrations travel along the interface between metal and dielectric. to be. In the surface plasmon experiment, metals containing free electrons and negative dielectric constant such as gold, silver, copper, aluminum, etc. are mainly used, and among them, the sharpest SPR resonance curve is used. Visible silver and gold with good surface stability are commonly used.

When an electric field is applied to two medium interfaces having different dielectric functions from outside, that is, the interface between metal and dielectric, surface charges are induced due to the discontinuity of the vertical component in the two medium interfaces, and the vibrations of the surface charges appear as surface plasmon waves. Surface plasmon waves, unlike electromagnetic waves in free space, are waves that vibrate parallel to the plane of incidence and are polarized with p-polarization. Therefore, in order to excite the surface plasmon by the optical method it is necessary to scan the TM polarized electromagnetic waves.

TM polarized incident waves are totally reflected at the boundary of the metal thin film and evanescent waves are exponentially reduced into the thin metal at the interface. Resonance occurs due to the coincidence of the phases of the surface plasmon waves traveling along the interface between the thin film and the dielectric. At this time, the light energy of the incident wave is absorbed by the metal thin film so that the reflected wave disappears. This is called surface plasmon resonance (SPR). The angle at which the reflectance of incident light is minimized is called surface plasmon resonance angle.

The resonance angle at which surface plasmon resonance occurs, that is, the angle at which the reflected light is minimized, changes the effective refractive index as a result of changing the structure or environment of the dielectric in contact with the metal thin film surface, resulting in a different resonance angle. Using the SPR principle, which can measure the environmental change of a material in an optical manner, it is possible to convert changes such as selective coupling or separation between various materials into a change of resonance angle through appropriate chemical or physical changes in the surface of the metal thin film. The sensing makes the SPR sensor a highly sensitive chemical sensor.

The SPR sensor system for detecting and analyzing the interaction between various chemicals using SPR can be divided into the optical unit that excites the SPR, the reaction chamber in contact with the sample measurement, and the signal processing unit that connects the measured reflectivity to the PC. have. The optical part is divided into a light source part, a polarization converting part, and a light detecting part necessary to excite the SPR.The reaction chamber is composed of a prism and a sample reaction part mainly on a glass substrate (usually called an SPR sensor chip) on which a metal film is deposited. The signal processor is an electronic circuit and driving software capable of measuring the measured reflectance in real time.

The SPR measuring device can choose various measuring methods such as angle conversion type to measure while changing incident angle of incident light, and variable wavelength type to measure while changing wavelength of incident wave at a constant angle of incidence. Can vary.

1 illustrates an example of a conventional sensor chip structure using surface plasmon resonance. In the conventional sensor chip 10, gold (Au) is deposited on a glass substrate 11 to form a metal layer 12 and a metal layer 12. After the dielectric layer 13 is formed on the glass substrate 11, the glass substrate 11 is bonded to the prism 14, and the light emitting part 20 is incident on the prism 14 to reflect the light from the prism 14. The light was analyzed by the light receiver 30 to detect the gas 40 reacting with the dielectric layer 13.

Referring to FIG. 1, when the light of the light source is absorbed by the surface plasmon wave SPW determined by the refractive index (n, k) values of the metal layer Au 12 and the dielectric layer 13, an SPR phenomenon occurs. When a specific component such as gas or liquid reacts with a body layer 13 (physical or chemical change), the SPW formed between the metal layer 12 and the dielectric layer 13 is analyzed to quantitatively measure the specific gas or liquid component. do.

The gas sensor using the surface plasmon resonance phenomenon is a structure that detects gas by forming a metal layer on a glass substrate and then forming a dielectric layer. When using a polymer such as metal oxide (WO ₃ ) or Nafion as the dielectric layer, the gas sensor has low stability. There is a problem that is unstable, it is difficult to detect a low concentration gas sample of the small signal size.

The present invention has been proposed to solve the above problems, and an object of the present invention is to increase the sensitivity by adding a multilayer metal layer and a polymer layer capable of amplifying a surface plasmon wave (SPW) signal and reacting with a gas. It is to provide a gas sensor chip using the surface plasmon resonance (SPR) that can be used repeatedly for a long period of time by stabilizing the sensing layer made of heat vacuum, and a method of manufacturing the same.

In order to achieve the above object, the gas sensor of the present invention reflects the light incident from the light emitting part and is manufactured to detect the gas by measuring the reflected light by the surface plasmon wave (SPW, Surface Plasmon Wave) changed in the light receiving part. A gas sensor, comprising: an optical member having a prism structure for reflecting light incident from the light emitting portion to a light receiving portion, a multilayer metal layer causing surface plasmon resonance by the incident light, and deposited on the metal layer to be produced according to surface plasmon resonance A sensing layer for sensing a gas by changing the refractive index of the surface wave, and a polymer layer for amplifying a surface plasmon wave signal between the multilayer metal layer and the sensing layer.

The gas sensor may further include a pretreatment layer for increasing the bonding force between the polymer layer and the optical member, wherein the pretreatment layer includes a sub metal layer of Ti or Cr and Al ₂ O _3. Or a metal oxide layer such as TiO ₂ and the thickness of the submetal layer and the metal oxide layer is 1 nm or less, respectively.

 The multilayer metal layer is composed of a silver (Ag) layer having a thickness of 30 nm to 50 nm, and a gold (Au) layer having a thickness of 5 nm to 10 nm.

In addition, the polymer layer is 100nm ~ 1000nm thickness, made of any one polymer of Nafion, PMMA, Polyaniline (PAni), PPy (Polypyrole), the sensing layer is a dielectric material of 100nm ~ 2000nm thickness.

In order to achieve the above object, the gas sensor manufacturing method of the present invention includes the steps of preparing a glass substrate, forming a sub metal layer on the glass substrate, forming a metal oxide layer on the sub metal layer, the oxidation Forming a polymer layer on the metal layer, forming a multilayer metal layer on the polymer layer; Forming a sensing layer on the metal layer, and bonding the glass substrate to a prism.

The forming of the multi-layered metal layer may include forming a silver layer on the polymer layer, and forming a gold layer on the silver layer, wherein forming the silver layer may open silver (Ag). Deposition on the polymer layer by evaporation (thermal evaporation) method to form a thickness of 30 ~ 50nm, forming the gold layer is deposited on the silver layer by thermal evaporation (thermal evaporation) method 5 ~ 10nm Form to thickness.

The forming of the sub metal layer may include depositing Ti or Cr on the glass substrate by a thermal evaporation method at 1 nm or less, and forming the metal oxide layer by using an atomic deposition method (ALD: Atomic). Layer Deposition) Al ₂ O ₃ or TiO ₂ is deposited on the sub-metal layer below 1nm.

The forming of the polymer layer may be performed by depositing any one of Nafion, PMMA, Polyaniline (PAni), and Polypyrole (PPy) on the metal oxide layer to form a thickness of 100 nm to 1000 nm, and forming the sensing layer. The polymer is deposited on the metal layer by a spin coating process of 400 to 10,000 rpm.

In the gas sensor according to the present invention, the metal layer is multi-layered so that the SPR curve is very sharp to increase the sensitivity of the gas detection, and amplify the SPW by the polymer layer to reduce the thickness limitation of the sensing layer. Is heated in vacuo to significantly increase stability, allowing long-term reproducible measurements of low concentrations of gas samples.

The technical problems achieved by the present invention and the practice of the present invention will be more clearly understood by the preferred embodiments of the present invention described below. The following examples are merely illustrated to illustrate the present invention and are not intended to limit the scope of the present invention.

Figure 2 is a schematic diagram showing the structure of the gas detection sensor chip using the surface plasmon resonance according to the present invention.

As shown in FIG. 2, the gas sensor chip 100 using surface plasmon resonance (SPR) according to the present invention includes a glass substrate 110 attached to a prism 160 and a polymer layer 130 for amplifying a signal. ), A pretreatment layer 120 for increasing the bonding force between the polymer layer 130 and the glass substrate 110, a multilayer metal layer 140 formed on the polymer layer 130, and the multilayer metal. The light emitting unit 30 includes the sensing layer 150 formed on the layer 140 to inject the light generated by the light emitting unit 20 into the sensor chip 100, and then reflect the amount of light reflected from the sensor chip 100. It is to detect the gas 40 in contact with the sensor chip 100 by measuring with.

Referring to FIG. 2, the prism 160 and the glass substrate 110 are made of BK7 having the same characteristics to reflect the incident light. BK7 is a glass having a refractive index of 1.515509 (λ = 637 nm), and a polymer layer and a metal layer are formed on the glass substrate 110 having the same characteristics as that of the prism 160 because it is difficult to directly form a polymer layer or a metal layer on the prism. Afterwards it is bonded to the prism 160. In an embodiment of the present invention, the thickness of the glass substrate 110 is about 0.8 mm.

The pretreatment layer 120 is a layer added to solve the problem that the polymer layer 130 peels off well when the polymer layer 130 is directly coated on the glass substrate 110. 121 and Al ₂ O ₃ Alternatively, the metal oxide layer 122 of TiO ₂ is formed, and the thicknesses of the submetal layer 121 and the metal oxide layer 122 are preferably 1 nm or less, respectively.

The polymer layer 130 deposited between the BK7 glass substrate 110 and the metal layer 140 amplifies the signal of the surface plasmon wave (SPW) to overcome the thickness limitation of the sensing layer 150 to enable easy fabrication. . That is, although the maximum thickness of the conventional sensing layer 150 is limited to about 150 nm, in the structure in which the polymer layer 130 is added according to the present invention, the sensing layer 150 may be increased up to 2000 nm as well as various types of sensing layers. Can be deposited. In addition, the signal sensitivity of the sensing layer is increased by the polymer layer 130, and the SPW sensitive to temperature change can be stably measured.

Kinds of polymers that may be used in the polymer layer 130 include Nafion, PMMA, Polyaniline (PAni), Polypyrole (PPy), and the like, and their structural formulas are shown in FIGS. 4A to 4D. Figure 4a is a diagram showing the structural formula of Nafion, Figure 4b is a diagram showing the structural formula of PMMA, Figure 4c is a diagram showing the structural formula of PAni (polyaniline), Figure 4d shows the structural formula of PPy (polypyrrole) One drawing.

The metal layer 140 is conventionally a single layer structure made of gold (Au), but in the present invention, the silver (Ag) layer 141 having a thickness of about 30 nm to 50 nm and the gold (Au) layer 142 having a thickness of 5 nm to 10 nm are 142. It consists of a multilayer structure. As described above, when the metal layer 140 is used together with metals (Ag, Cu, or Al) other than gold (Au) to form a multilayer structure, Ag, Cu, Al, and the like prevent the chemical reaction of gold (Au) and thus SPR. The curve can be sharpened, so that the change in the SPR curve due to the change of the sample can be sensitively measured.

The sensing layer 150 is made of a dielectric material having a thickness of 100 nm to 2000 nm to provide reactivity or sensitivity with a gas or liquid sample to be measured. In particular, the sensing layer 150 must maintain a reproducibility stably providing a constant value even when repeated measurements, when the conventional deposition using Nafion polymer, the sensing layer is peeled off well, but it was not able to stably bond with the gas. In the above, by heating in a vacuum to have stability, a measurement with long-term reproducibility was possible. In addition, the gas that can be sensed may vary depending on the combination or the combination of the dielectric materials forming the sensing layer. In the embodiment of the present invention, as the dielectric material of the sensing layer 150, a Nafion polymer heated in vacuum is used. Detect ammonia gas.

In the sensor chip 100 having such a structure, when light is incident from the light source of the light emitting unit 20, the surface plasmon wave SPW determined by the refractive index (n, k) values of the metal layer 140 and the sensing layer 150 is determined. : Surface Prasmon Wave (SPR) is generated by absorbing light from a light source, and the metal layer 140 and the sensing layer 150 when the sensing layer 150 and the gas 40 of a specific component react (physical or chemical change). The surface plasmon wave (SPW) formed between the) is changed so that the light receiving unit 30 can quantitatively analyze the sensed gas component by analyzing the intensity of the reflected wave. At this time, the metal layer 140 is multi-layered so that the SPR curve is very sharp to increase the sensitivity of the gas detection, to amplify the SPW by the polymer layer to relax the thickness limit of the sensing layer, through the thermal vacuum sensing layer Stabilize to allow detection of long term and trace gases.

3 is a flowchart illustrating a manufacturing process of a gas sensor chip using surface plasmon resonance according to the present invention.

In the method of manufacturing a gas sensor chip using surface plasmon resonance (SPR) according to the present invention, as shown in FIG. 3, preparing a glass substrate 110 (S1) and forming a pretreatment layer 120 ( S2), forming the polymer layer 130 (S3), forming the multilayer metal layer 140 (S4), forming the sensing layer 150 (S5), and prism the glass substrate 110 And step S6 of joining with 160. The step S2 of forming the pretreatment layer 120 is divided into a step S2-1 of forming the submetal layer 121 and a step S2-2 of forming the metal oxide layer 122, and the multi-layer metal The step 140 of forming the layer 140 is divided into a step of forming the silver (Ag) layer 141 (S4-1) and a step of forming a gold (Au) layer 142 (S4-2). .

Referring to FIG. 3, first, a BK7 glass substrate 110 having a refractive index of 1.51509 (λ = 637 nm) for preparing a gas sensor chip according to the present invention is prepared, and the BK7 organic substrate 110 and a polymer are stable. The sub metal layer 121 and the metal oxide layer 122 are deposited in the middle (S1, S2) for bonding.

The sub metal layer 121 is deposited on the glass substrate 110 by Ti or Cr 1 nm or less by thermal evaporation (S2-1), and the metal oxide layer 122 is an atomic vapor deposition method. Al ₂ O ₃ or TiO ₂ is deposited on the sub metal layer 121 at 1 nm or less by (ALD: Atomic Layer Deposition) (S2-2). At this time, if the thickness is more than 1nm, the sensitivity of the SPR signal is reduced.

Subsequently, a polymer of Nafion, PMMA, polyaniline (PAni), or polypyrole (PPy) is deposited on the metal oxide layer 122 to amplify the SPR signal, thereby forming a polymer layer 130 having a thickness of 100 nm to 1000 nm. (S3).

Usually, Au is used as a basic layer where SPR phenomenon occurs. The SPR signal width (FWHM, Full Width at Half Maximun) of Au is 1 to 4 degrees wider than silver (Ag). Because of this size, the sensitivity is relatively low. However, in terms of reactivity, gold (Au) is stable. In an embodiment of the present invention, gold (Au) and silver (Ag) are deposited in a multilayer in an appropriate thickness to increase sensitivity and stability. That is, in the present invention, silver (Ag) is deposited on the polymer layer 130 by thermal evaporation to form a silver (Ag) layer 141 having a thickness of 30 to 50 nm, and gold (Au) is thermally evaporated. The thermal evaporation method is deposited on the silver layer 141 to form a gold layer 142 having a thickness of 5 to 10 nm (S4).

On this basic structure, many dielectric materials reacting selectively with a specific gas are deposited to form a sensing layer 150 having a thickness of approximately 1000 nm to 2000 nm, so that even a low concentration of gas can be measured. It can be used as an SPR sensor chip (S5).

At this time, the sensing layer 150 may be any material having dielectric properties, but a material other than polymer is usually a spin-coating process of 400 to 10,000 rpm because of a complicated deposition process. Various polymers such as PMMA, PAni, and Nafion can be easily used.

In the embodiment of the present invention, Nafion of Sigma aldrich company  Perfluorinated resin solution (5% in lower aliphatic alcohols and water, contains 15-20% water) is deposited on the metal layer 140 by spin-coating at 400-10,000 rpm and dried at 80 ° C. in air. After the deposition, the deposited Nafion was stabilized by a thermal vacuum treatment method (thermal vacuum condition: substrate temperature 150 ° C., vacuum for 1 hour at 10 ⁻³ torr). Therefore, the gas sensor chip 100 manufactured according to the present invention can be subjected to long-term reproducibility by heating in a vacuum to have stability.

As shown in FIG. 2, the gas sensor chip 100 using the surface plasmon resonance phenomenon manufactured as described above exposes the sensing layer 150 to the environment of the gas 40 to be measured, and the light emitting unit 20 and the light receiving unit ( 30) in the form of an optical sensor.

Referring back to FIG. 2, the light incident from the light source of the light emitting unit 20 is incident to the right angle prism 160 attached to the glass substrate 110 after being P-polarized to the polarizer and to the metal layer 140. Light energy is transferred to free electrons, causing surface plasmon resonance (SPR). At this time, a laser or a light emitting diode (LED) can be used as a light source.

Surface plasmon waves (SPW) are determined by the refractive index (n, k) values of the metal layer 140 and the sensing layer 150 by surface plasmon resonance. When the gas 40 reacts (physical or chemical change), the refractive index between the metal layer 140 and the sensing layer 150 is changed, and the intensity change of the reflected light due to the change of the refractive index in the light receiving unit 30 is an electrical signal. Detect. The light receiver 30 may be implemented as a photo diode or a photo transistor. The electrical signal detected by the light receiving unit 30 is processed by processing means (not shown) to determine the component of the measurement gas.

5 is a graph showing improved characteristics when a polymer layer is added according to the present invention, where the horizontal axis represents the incident angle and the vertical axis represents the intensity of the reflected light. In the graph shown in FIG. 5, 'G1' is a graph showing the intensity of the reflected light in the sensor chip of the conventional structure, 'G2' is a graph showing the intensity of the reflected light in the structure to which the polymer layer is added according to the present invention to be. Comparing the two graphs, it can be seen that the characteristics of the reflected light appear sharper in the improved structure with the addition of the polymer layer.

6 is a graph showing improved characteristics when the metal layer has a multilayer structure according to the present invention, where the horizontal axis represents the incident angle and the vertical axis represents the intensity of the reflected light. In the graph shown in FIG. 5, 'G3' is a graph showing the intensity of the reflected light in the sensor chip of the conventional structure, 'G4' is a graph showing the intensity of the reflected light in the multilayer structure according to the present invention. Comparing the two graphs, it can be seen that the characteristic of the reflected light is larger and sharper in the multilayer metal layer structure.

7 is a graph showing the results of measuring the intensity of the SPR according to the change in ammonia gas concentration as a function of time in the example of the ammonia gas sensor chip according to the present invention, the horizontal axis represents the reaction time (unit second), the vertical axis represents the concentration According to the intensity. According to the graph, it can be seen that the ammonia gas concentration step by step has a characteristic of quantitatively reacting with the strength of the SPR.

The graph shown in FIG. 8 shows the ammonia gas concentration and the intensity of the SPR and the sequential ammonia gas concentration according to the concentration using the signal measurement change amount (differential result) of the SPR according to the reaction time with the sensing layer. As a result of analyzing the correlation with the strength of the SPR signal, it can be seen that there is linearity.

Although the present invention has been described with reference to the embodiments illustrated in the drawings, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom.

1 is a schematic diagram showing the structure of a sensor chip using a conventional surface plasmon resonance,

2 is a schematic diagram showing a structure of a gas sensor chip using surface plasmon resonance according to the present invention;

3 is a flowchart illustrating a manufacturing process of a gas sensor chip using surface plasmon resonance according to the present invention;

Figure 4a is a view showing the structural formula of Nafion used as a polymer of the gas sensor chip according to the present invention,

Figure 4b is a view showing the structural formula of the PMMA used as a polymer of the gas sensor chip according to the present invention,

Figure 4c is a view showing the structural formula of PAni (polyaniline) used as a polymer of the gas sensor chip according to the present invention,

Figure 4d is a view showing the structural formula of PPy (polypyrrole) used as a polymer of the gas sensor chip according to the present invention,

5 is a graph illustrating the improved characteristics when a polymer layer is added according to the present invention;

6 is a graph showing the improved characteristics when the metal layer has a multi-layer structure according to the present invention,

Figure 7 is a graph showing the change of the SPR signal with time according to the ammonia gas concentration step by step in the ammonia gas sensor chip according to the present invention

8 is a graph showing the correlation between the ammonia gas concentration and the derivative value according to the SPR signal change in the ammonia gas sensor chip according to the present invention.

* Explanation of symbols for main parts of the drawings

20 light emitting part 30 light receiving part 40 gas

100: gas sensor chip 110: glass substrate

120: pretreatment layer 130: polymer layer

140: metal layer 150: sensing layer

Claims (15)

delete delete In the gas sensor chip manufactured by reflecting the light incident from the light emitting unit to measure the surface plasmon wave (SPW, Sufrace Plasmon Wave) changed in the light receiving unit to detect the gas, An optical member having a prism structure for reflecting light incident from the light emitting portion to the light receiving portion; A metal layer generating surface plasmon resonance in response to the incident light; A sensing layer bonded to the metal layer to generate a wavelength shift of the surface wave generated according to the surface plasmon resonance so as to sense a contacted gas; A polymer layer for amplifying a surface plasmon wave (SPW) of a sensing layer between the optical member and the metal layer; And And a pretreatment layer for increasing bonding force between the polymer layer and the optical member, The pretreatment layer is A gas sensor chip using surface plasmon resonance, comprising a sub metal layer of Ti or Cr and a metal oxide layer of Al ₂ O ₃ or TiO ₂ , wherein the thickness of the sub metal layer and the metal oxide layer is 1 nm or less, respectively. The method of claim 3, wherein the optical member A gas sensor chip using surface plasmon resonance, comprising a prism and a glass substrate bonded to a prism. The method of claim 3, wherein the metal layer A gas sensor chip using surface plasmon resonance characterized by a multi-layered structure consisting of a 30 nm to 50 nm thick silver layer and a 5 nm to 10 nm thick gold layer. The method of claim 3, wherein the polymer layer A gas sensor chip using surface plasmon resonance, characterized in that the thickness is 100nm ~ 1000nm, made of any one of Nafion, PMMA, PAni (Polyaniline), PPy (Polypyrole) polymer. In the gas sensor chip manufactured by reflecting the light incident from the light emitting unit to measure the surface plasmon wave (SPW, Sufrace Plasmon Wave) changed in the light receiving unit to detect the gas, An optical member having a prism structure for reflecting light incident from the light emitting portion to the light receiving portion; A metal layer generating surface plasmon resonance in response to the incident light; A sensing layer bonded to the metal layer to generate a wavelength shift of the surface wave generated according to the surface plasmon resonance so as to sense a contacted gas; And A polymer layer is provided between the optical member and the metal layer to amplify the surface plasmon wave (SPW) of the sensing layer. The sensing layer Gas sensor chip using surface plasmon resonance, characterized in that the dielectric material having a thickness of 100nm to 2000nm. The method of claim 7, wherein the dielectric material is Gas sensor chip using surface plasmon resonance characterized in that it consists of Nafion heat-vacuum to detect ammonia gas. Preparing a glass substrate; Forming a sub metal layer on the glass substrate; Forming a metal oxide layer on the sub metal layer; Forming a polymer layer on the metal oxide layer; Forming a multilayer metal layer on the polymer layer; Forming a sensing layer on the metal layer; And A method of manufacturing a gas sensor chip using surface plasmon resonance, comprising bonding the glass substrate to a prism. The method of claim 9, wherein the forming of the metal layer comprises: Forming a silver layer on the polymer layer, and forming a gold layer on the silver layer Gas sensor chip manufacturing method using the surface plasmon resonance, characterized in that consisting of. The method of claim 10, wherein the forming of the silver layer comprises depositing silver (Ag) on the polymer layer by thermal evaporation to form a thickness of 30 to 50 nm, The forming of the gold layer is a method of manufacturing a gas sensor chip using surface plasmon resonance, characterized in that the deposition of gold (Au) on the silver layer by thermal evaporation (thermal evaporation) to form a thickness of 5 ~ 10nm. The method of claim 9, wherein the forming of the sub-metal layer comprises depositing Ti or Cr on the glass substrate at a temperature of 1 nm or less by a thermal evaporation method. The forming of the metal oxide layer may include depositing Al ₂ O ₃ or TiO ₂ on the submetal layer by 1 nm or less using an atomic layer deposition (ALD) gas sensor using surface plasmon resonance. Chip manufacturing method. The method of claim 9, wherein forming the polymer layer Method of manufacturing a gas sensor chip using the surface plasmon resonance characterized in that to form a polymer of any one of Nafion, PMMA, PAni (Polyaniline), PPy (Polypyrole) deposited on the metal oxide layer to a thickness of 100nm ~ 1000nm. The method of claim 9, wherein forming the sensing layer Method of manufacturing a gas sensor chip using surface plasmon resonance, characterized in that the polymer is deposited on the metal layer by a spin coating process of 400 ~ 10,000rpm. 15. The method of claim 14, wherein the polymer is Nafion, deposited on the metal layer and dried in air at 80 ° C., and a thermal vacuum method (thermal vacuum condition: substrate temperature 150 ° C., vacuum 1 hour at 10 ⁻³ torr). The gas sensor chip manufacturing method using the surface plasmon resonance, characterized in that to stabilize by fixing the deposited Nafion.

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