KR100925764B1 - Manufacturing method of GaN array - Google Patents

Abstract

Disclosed is a method of manufacturing a gallium nitride array. Growing a gallium nitride (GaN) layer on the substrate, depositing a resin layer on the gallium nitride layer, preparing a stamp having an embossed pattern, and pressing a stamp on the resin layer to form an intaglio pattern corresponding to the embossed pattern The method of manufacturing a gallium nitride array including the step of removing the resin layer protruding between the intaglio pattern and the protruding resin layer comprises a high degree of alignment of the gallium nitride nanorods using an imprint method. Can be implemented, the size of the nano-rod can be adjusted, the quantum size effect can be increased, and the process time and cost can be saved.

Gallium Nitride Layer, Embossed Pattern, Stamp, Engraved Pattern, Array

Description

Manufacturing method of gallium nitride array {Manufacturing method of GaN array}

The present invention relates to a method for producing a gallium nitride array.

 One-dimensional nanosize materials have been studied in recent years due to their inherent optical and electrical properties and their potential use in electronics and optoelectronics.

Meanwhile, in order to manufacture a semiconductor device, MOCVD (Metal Organic Chemical Vapor Deposition) and MBE (molecular beam epitaxy) for growing a semiconductor thin film on a substrate by supplying a gaseous raw material to a substrate mounted on a susceptor. The device is known. Such a MOCVD apparatus and a MOCVD process are used for the manufacture of semiconductor LEDs such as nitride semiconductor LEDs (Light Emitting Diodes).

Recently, gallium nitride-based semiconductors have been applied to light emitting diodes (LEDs) and laser diode (LD) devices. In particular, light emitting diodes have been applied to the blue, green, and yellow spectral regions. An electrode must be formed.

In general, a blue light emitting device using a nitride semiconductor is separated into 0.2-0.4 milliliters and designed to be compatible with other existing LED chips to use a conventional LED lamp assembly process.

However, since the conventional gallium nitride-based LED is formed as a two-dimensional nano structure, which is a thin film structure through the formation of a single crystal using equipment such as MOCVD and MBE, one dimension nano (one dimension) nano) The quantum size effect of the structure could not be enhanced.

In addition, when manufacturing the gallium nitride nano-rods growing in a periodic pattern using the above processes, expensive semiconductor equipment is required, and the entire process is complicated, not only takes a lot of work time but also costs a lot of problems. It was difficult to control the density and size of the gallium nitride nanorod array.

The present invention can implement a high degree of alignment of the gallium nitride nanorods, and provides a method of manufacturing a gallium nitride array capable of adjusting the size of the gallium nitride nanorods.

According to an aspect of the invention, the step of growing a gallium nitride (GaN) layer on the substrate, the step of depositing a resin layer on the gallium nitride layer, preparing a stamp formed with an embossed pattern, by pressing the stamp on the resin layer embossed It provides a gallium nitride array manufacturing method comprising the step of forming an intaglio pattern corresponding to the pattern and the step of removing the resin layer protruding between the intaglio pattern and the gallium nitride layer corresponding to the protruding resin layer.

The gallium nitride layer may be formed of a p-GaN layer, an InGaN / GaN layer, and an n-GaN layer.

Before forming the intaglio pattern, the method may further include performing a self-assembled monolayer (SAM) coating on the stamp.

In addition, the resin layer is made of a thermosetting material, the step of forming the intaglio pattern, the step of thermocompression bonding the stamp on the resin layer, the step of raising the temperature to cure the resin layer and

It may include the step of separating the stamp and the resin layer.

Also, removing the resin layer and the gallium nitride layer may include depositing a nickel layer on the intaglio pattern, removing the resin layer, etching the exposed gallium nitride layer, and removing the nickel layer. Can be.

In the gallium nitride array manufacturing method according to the present invention, it is possible to implement a high degree of alignment of the gallium nitride nanorods by using the imprint method, the size of the rod can be adjusted, the quantum size effect can be increased, the process time and cost Can save.

As the invention allows for various changes and numerous embodiments, particular embodiments will be illustrated in the drawings and described in detail in the written description. However, this is not intended to limit the present invention to specific embodiments, it should be understood to include all transformations, equivalents, and substitutes included in the spirit and scope of the present invention. In the following description of the present invention, if it is determined that the detailed description of the related known technology may obscure the gist of the present invention, the detailed description thereof will be omitted.

The terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting of the present invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this application, the terms "comprise" or "have" are intended to indicate that there is a feature, number, step, operation, component, part, or combination thereof described in the specification, and one or more other features. It is to be understood that the present invention does not exclude the possibility of the presence or the addition of numbers, steps, operations, components, components, or a combination thereof.

Hereinafter, an embodiment of a gallium nitride array manufacturing method according to the present invention will be described in detail with reference to the accompanying drawings, in the description with reference to the accompanying drawings, the same or corresponding components are given the same reference numerals and Duplicate explanations will be omitted.

1 is a flowchart illustrating a method of manufacturing a gallium nitride array according to an embodiment of the present invention, and FIGS. 2 to 9 are flowcharts illustrating a method of manufacturing a gallium nitride array according to an embodiment of the present invention.

2 to 9, the substrate 10, the gallium nitride layer 20, the n-GaN layer 22, the InGaN / GaN layer 24, the p-GaN layer 26, and the resin layer 30. , Stamp 40, embossed pattern 42, SAM coating layer 44, intaglio pattern 32, nickel layer 50, gallium nitride nanorod 28 are shown.

In the present embodiment, the gallium nitride (GaN) layer 20 is grown on the substrate 10, the resin layer 30 is formed on the gallium nitride layer 20, and the stamp 40 having the embossed pattern 42 formed thereon. And a stamp 40 is pressed onto the resin layer 30 to form an intaglio pattern 32 corresponding to the embossed pattern 42, and then the resin layer 30 protrudes between the intaglio patterns 32. By removing the gallium nitride layer 20 corresponding to the protruding resin layer 30, the gallium nitride nanorod 28 may be manufactured.

Accordingly, it is possible to implement a high degree of alignment of the gallium nitride nanorods 28 using the imprint method, to adjust the size of the bare rod, to increase the quantum size effect, and to reduce the process time and cost .

To this end, first, as shown in FIG. 2, the gallium nitride (GaN) layer 20 is grown on the substrate 10 (S10), and the resin layer 30 is formed on the gallium nitride layer 20 (S20). ).

In this case, the substrate 10 may use a c-axis sapphire substrate 10.

More specifically, the gallium nitride layer 20 is formed of an n-type gallium nitride (n-GaN) layer 22, an InGaN / GaN layer 24, and a p-type gallium nitride layer (p-GaN layer) 26. .

First, an n-type gallium nitride (n-GaN) layer 22 is grown to a thickness of 3 μm on the substrate 10, and the InGaN / GaN layer 24 may be alternately repeatedly stacked five times. The number of times is not limited to this.

Next, a p-type gallium nitride (p-GaN) layer 26 is grown on the InGaN / GaN layer 24 to a thickness of 0.1 mu m.

Next, the resin layer 30 is deposited on the p-type gallium nitride layer 26 to a thickness of 1 m. In this case, the resin layer 30 may be formed of a thermosetting resin, for example, may be formed of an epoxy resin. The method of forming the epoxy resin layer may be performed by spin coating.

Next, as shown in FIG. 3, a stamp 40 having an embossed pattern 42 is prepared (S30). The stamp 40 may be made of metal or polymer material. In this case, the density and size of the gallium nitride nanorod 28 to be described later can be adjusted according to the design of the stamp 40.

Next, as shown in FIG. 4, a self-assembled monolayer (SAM) coating is performed on the stamp 40 on which the embossed pattern 42 is formed (S40). When the coating layer 44 is formed by performing SAM coating on the embossed pattern 42, when the embossed pattern 42 of the stamp 40 is pressed onto the resin layer 30, the resin layer 20 and the stamp pressed together are pressed. 30 can be easily separated.

The embodiment of forming the SAM coating layer 44 on the stamp 40 will be briefly described as follows.

First, in order to form the SAM coating layer 44 on the surface of the stamp 40, it is necessary to form -OH groups on the surface of the stamp 40. To do this, apply UV-ozone treatment for about 10 minutes.

After the UV-ozone treatment, the stamp 40 is rinsed using acetone, isopropyl alcohol (IPA) and deionized water (DI water), and then dried.

Then, hexane (Hexane) and SAM reagent (heptadecafluoro-1,1,2,2TETRAHYDRODECYL-TRICHLOROSILANE) are mixed at a ratio of 1000: 1 and mixed in a stirrer for 5 to 10 minutes. The mixing time can be changed as appropriate depending on the amount of the solution.

Thereafter, the stamp 40 is immersed in the mixed solution of hexane and SAM reagent and stirred for about 10 minutes in a stirrer.

After stirring is completed, the stamp 40 is taken out of the stirrer, and then rinsed sequentially using hexane and deionized water. Herein, rinsing is used to mean rinsing, and this rinsing process may be repeated several times as necessary.

Then, to remove the cluster (cluster) and the like on the surface of the stamp 40 may be subjected to sonication (sonication) for about 3 to 5 minutes.

Through the above process, it is possible to form the SAM coating layer 44 having releasability on the surface of the stamp 40. On the other hand, the above-described specific method is only one example for forming the SAM coating layer 44, it is a matter of course that the SAM coating layer 44 can be formed by various other methods.

Next, as shown in FIGS. 5 and 6, the stamp 40 is pressed onto the resin layer 30 to form an intaglio pattern 32 corresponding to the embossed pattern 42 (S50).

On the other hand, when using a thermosetting epoxy material as the resin layer 30, in order to be able to form the intaglio pattern 32 more efficiently, the imprinting process can be dualized.

That is, the stamp 40 and the resin layer 30 are thermocompression-bonded in the temperature range (for example, about 100 ° C.) at which the viscosity of the resin layer 30 becomes the lowest (S52), and in a state in which the compression state is maintained. After raising the temperature to a temperature range where the resin layer 30 can be cured (for example, about 170 ° C.) to cure the resin layer 30 (S54), the stamp 40 and the resin layer 30 are separated. It is possible to use the method (S56).

Using this method, the embossed pattern 42 formed on the stamp 40 can be more efficiently transferred to the resin layer 30, and the shape of the pattern transferred to the resin layer 30 at the time of separation or after separation is It can be efficiently maintained, thereby ensuring the reliability of the gallium nitride array to be manufactured later.

Next, the gallium nitride nanorod 28 is formed by removing the resin layer 30 protruding between the intaglio pattern 32 and the gallium nitride layer 20 corresponding to the protruding resin layer 30 (S60). can do.

More specifically, first, as shown in FIG. 7, a nickel (Ni) layer 50 is deposited on the intaglio pattern 32 (S62). The nickel layer 50 may be formed using a sputtering method, an electron beam lithography (e-beam) method, and a deposition method. In this embodiment, the thickness is deposited to a thickness of 0.1 ~ 15nm using a sputtering method.

Next, as shown in FIG. 8, the resin layer 30 is removed through chemical etching (S64). After the resin layer 30 is removed, the thickness of the nickel layer 50 to be patterned may be adjusted according to the ICP-RIE (Inductively Coupled Plasma-Reactive Ion Etching) etching conditions.

Next, as the resin layer 30 is removed in FIG. 8, when the exposed gallium nitride layer 20 is etched (S66), the gallium nitride nanorod 28 as illustrated in FIG. 9 may be formed. Next, the remaining nickel layer 50 is etched and removed (S68).

The patterned nickel layer 50 serves as a nano mask, and the etching of the gallium nitride layer 20 by using a slow etching rate in the ICP-RIE process compared to the gallium nitride layer 20. Proceed with the process.

At this time, the etching gas is a chlorine (Cl ₂ ) and argon (Ar) gas, the etching rate is 4000 Pa / min and the gas can be Cl ₂ and Ar in the ratio of 50:20.

In addition, ICP source power (source power) is in the range of 100 ~ 400W, chamber pressure (chamber pressure) is a process for 3 minutes at 0.67 Pa.

Through the above process, the quantum size effect can be realized, and a high degree of alignment of the gallium nitride nanorods 28 can be realized by using an imprint method, and the gallium nitride nanorods 28 are changed by changing the design of the stamp 40. You can adjust the size. Therefore, it can be easily used in the production of various types of nanorods.

Although the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art to which the present invention pertains without departing from the spirit and scope of the present invention as set forth in the claims below It will be appreciated that modifications and variations can be made.

1 is a flow chart illustrating a method of manufacturing a gallium nitride array according to an embodiment of the present invention.

2 to 9 are flowcharts illustrating a method of manufacturing a gallium nitride array according to an embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

10 substrate 20 gallium nitride layer

22: n-GaN layer 24: InGaN / GaN layer

26: p-GaN layer 30: resin layer

40: stamp 42: embossed pattern

44: SAM coating layer 32: intaglio pattern

50: nickel layer 28: gallium nitride nanorod

Claims (5)

Growing a gallium nitride (GaN) layer on the substrate; Depositing a resin layer on the gallium nitride layer; Preparing a stamp on which an embossed pattern is formed; Pressing the stamp onto the resin layer to form an intaglio pattern corresponding to the embossed pattern; And And removing the gallium nitride layer corresponding to the protruding resin layer and the resin layer protruding between the intaglio patterns. The method of claim 1, The gallium nitride layer is formed of a gallium nitride array, characterized in that the p-GaN layer, InGaN / GaN layer and n-GaN layer. The method of claim 1, Before forming the intaglio pattern, The method of claim 1, further comprising performing a self-assembled monolayer (SAM) coating on the stamp. The method of claim 3, The resin layer is made of a thermosetting material, Forming the intaglio pattern, Thermally compressing the stamp on the resin layer; Raising the temperature to cure the resin layer; And Gallium nitride array manufacturing method comprising the step of separating the stamp and the resin layer. The method of claim 1, Removing the resin layer and the gallium nitride layer, Depositing a nickel layer on the intaglio pattern; Removing the resin layer; Etching the gallium nitride layer to be exposed; And And removing the nickel layer.

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