KR100916186B1 - Electrostatic chuck having means for uniforming temperature of wafer - Google Patents

Abstract

An electrostatic chuck is provided to maintain the temperature of a wafer and the surface of the electrostatic chuck by building a unit for maintaining the temperature using a heat pipe principle. In an electrostatic chuck, a unit(21) for maintain the temperature exchanges heat with a wafer and maintains the temperature of the wafer uniform when temperature variation of the wafer is generated. The electrostatic insulating layer(11) is fixed by a supporting member(22). The supporting member is composed of a support wall using a gas supply line(25) for supplying the gas to the wafer.

Description

Electrostatic chuck having means for uniforming temperature of wafer}

The present invention relates to an electrostatic chuck that holds a wafer in a semiconductor and LCD manufacturing facility, and more particularly, to a built-in temperature homogenization means using the heat pipe principle to uniformly maintain the temperature of the surface of the electrostatic chuck and the wafer placed thereon. The electrostatic chuck can be.

In general, the equipment for the etching process during the manufacturing process of the semiconductor and LCD includes an electrostatic chuck for holding the wafer in place in the chamber.

The reason for fixing the wafer in place in the electrostatic chuck is to prevent the wafer from moving during the etching process for the wafer, and supplying an electrostatic voltage to the electrostatic chuck so that electrostatic power does not occur between the wafer and the electrostatic chuck. The wafer is fixed using the generated electrostatic force.

The etching process refers to a process of etching a metal, poly-Si, oxide, or the like deposited on a wafer in a plasma atmosphere.

If the overall surface temperature of the wafer becomes uneven during the etching process, the etching rate per unit time is changed, thereby greatly reducing the yield of the semiconductor chip.

Therefore, the temperature uniformity of the wafer is very sensitive in the etching process, and the temperature of the electrostatic chuck is always measured by the temperature sensor during the process.

In addition, since the wafer temperature varies depending on the type of film to be etched, it is necessary to manufacture an electrostatic chuck capable of easily and quickly responding to various temperatures.

Referring to the conventional electrostatic chuck as follows.

1 is a schematic cross-sectional view showing a conventional electrostatic chuck for semiconductor manufacturing.

As shown in FIG. 1, an electrostatic insulating film 11 is formed on the top of the electrostatic chuck body 10 made of aluminum or the like.

The electrostatic insulating film 11 is made of a material having a high dielectric constant as much as possible in order to increase the electrostatic power, and may be classified into a structure and include a single layer film and a triple film.

Although a single layer film includes a ceramic material film, a polyimide film, and the like, and a triple film is a film composed of ceramic-metal-ceramic, but the temperature uniformity of the wafer is not significantly related.

An insulating film (ceramic) is formed on the body of the electrostatic chuck, and a conductive film (metal) is formed on the insulating film, and a dielectric film (ceramic) is formed on the conductive film. It is a structure formed.

In the single layer film, electrostatic power is formed between the electrostatic voltage of the wafer and the electrostatic voltage supplied to the electrostatic chuck body, and in the case of the triple layer, the electrostatic voltage is applied between the electrostatic voltage of the wafer and the electrostatic voltage supplied to the conductive film through the lower portion of the electrostatic chuck body. Power is formed.

In addition, the electrostatic chuck body 10 is formed with a gas passage 12 through which the helium gas, etc. can be supplied over the electrostatic insulating film 11, and passes through the gas passage 12 of the electrostatic chuck body 10 Cooling gas supplied from the lower side, for example, helium gas, is supplied to the wafer on the electrostatic insulating film 11.

In this case, when the wafer is partially bent through the previous process and the adhesion with the electrostatic insulating layer is not completed, the temperature nonuniformity is greatly generated. In order to prevent this, helium gas is supplied.

At this time, the type of gas supplied or the supply path of the gas is different for each manufacturer of the electrostatic chuck, but it is not significantly related to the temperature uniformity of the wafer.

In addition, a power supply hole 13 is formed inside the electrostatic chuck body 10, and a power line 15 extending from the electrostatic power supply unit 14 is installed along the power supply hole 13. The power line 15 serves to supply a high voltage provided from the electrostatic power supply unit 14 to the conductive film 16.

In addition, the wafer where the process is completed is pushed upward by the lift pin 17 installed through the lift pin hole 20 of the electrostatic chuck body 10 to be unloaded.

On the other hand, inside the electrostatic chuck body 10, a temperature adjusting means such as a chiller or a heater is installed to control the temperature of the electrostatic chuck. In FIG. 2, an example in which the chiller 18 is installed, and in FIG. ) Shows an example of installation.

In the case of the chiller as the temperature adjusting means, a flow path is formed inside the electrostatic chuck body, and the fluid for cooling is supplied to circulate the flow path, thereby controlling the temperature of the electrostatic chuck.

In the etching process, since the set temperatures are different depending on the types of etching films to be etched, fluids having different temperatures are circulated in the chiller according to the set temperatures.

In the case of a heater as the temperature control means, the heater is operated by a voltage applied from an external electric supply unit, and the electric heater may be installed at the same time as the fluid circulation chiller.

In this case, both heating and cooling are possible, and in a certain temperature range, there is an advantage of increasing the temperature uniformity of the wafer as compared with the case where only the chiller is installed.

As described above, the detailed structure of the electrostatic chuck has been described, and each detailed structure is different for each manufacturer manufacturing the equipment of the etching process.

Such a conventional electrostatic chuck has the following problems.

Most electrostatic chucks used in the prior art have precisely manufactured chiller flow paths for circulating fluid to secure temperature uniformity of the electrostatic chuck. However, the temperature uniformity of the wafer is still very poor, depending on the internal structure of the process equipment. For equipment for 12-inch wafer processing, much effort is being made to ensure that the temperature uniformity of the wafers is satisfactory.

Each manufacturer uses various methods to secure technological competitiveness of the product, but it has not yet reached the standard level.

In particular, during the process, the wafer has a relatively lower temperature at the center and a higher temperature at the edge than the center, and each manufacturer is making a lot of efforts to reduce the temperature difference caused by each part of the wafer. .

Accordingly, the present invention has been made in view of the above, by implementing a new type of electrostatic chuck incorporating a temperature homogenizing means using the principle of heat pipe in the lower portion of the electrostatic insulating film in the electrostatic chuck body, It is an object of the present invention to provide an electrostatic chuck in which a temperature homogenizing means capable of maximizing temperature uniformity of a surface and a wafer placed thereon is embedded.

In addition, the present invention implements a new type of electrostatic chuck including a support means that can prevent the electrostatic insulating layer from swelling due to the high pressure inside when applying the temperature homogenizing means of the heat pipe principle, the surface of the electrostatic chuck and the wafer Another object is to provide an electrostatic chuck incorporating a temperature homogenizing means including support means capable of simultaneously ensuring close adhesion between the liver and temperature uniformity of the wafer.

In order to achieve the above object, the electrostatic chuck provided by the present invention is formed under the electrostatic insulating film formed on the upper end of the electrostatic chuck body and exchanges heat with the wafer when a temperature deviation of the wafer occurs during the process using a heat pipe principle. And a temperature homogenizing means for uniformizing the temperature of the electrostatic insulating layer, wherein the electrostatic insulating film positioned above the temperature homogenizing means is fixed by at least one or more supporting means formed inside the upper edge portion of the body of the electrostatic chuck. By doing so, it is possible to prevent a problem that the electrostatic insulating film is inflated by the internal gas pressure.

Here, the support means is preferably configured in the form of a support wall surrounding the periphery of the gas supply line, the gas passage, the lift pin hole, the power supply hole, the sensor hole, and the like and delimiting the boundary with the temperature equalization means side.

The electrostatic chuck with the built-in temperature homogenizing means provided in the present invention has the following advantages.

The yield can be improved by keeping the surface temperature of the electrostatic chuck and the wafer temperature uniform throughout.

In addition, by applying the existing temperature control means as it is with the temperature homogenization means, it is possible to change quickly and accurately, without stressing the device with respect to the rise and fall of the temperature of the wafer, and thus productivity Improvement can be aimed at.

In particular, by firmly holding the electrostatic insulating film by using various types of appropriate supporting means, it is possible to completely exclude the swelling of the electrostatic insulating film even at a high pressure formed in the temperature homogenizing means, and thus close contact between the wafer and the electrostatic chuck surface. It has the effect of keeping the wafer temperature uniform while maintaining it.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

The present invention provides a heat pipe inside the electrostatic chuck body, for example, between the temperature control means and the electrostatic insulating film, in order to ensure maximum temperature uniformity of the surface of the electrostatic chuck and the wafer placed thereon during the semiconductor and LCD manufacturing process. The main feature is the built-in temperature homogenization means using the principle.

Figure 4 is a schematic cross-sectional view showing an electrostatic chuck with a built-in temperature uniformization means according to an embodiment of the present invention.

As shown in FIG. 4, the electrostatic chuck is used for an etching process in semiconductor and LCD manufacturing equipment, and is a device for fixing a substrate, for example, a wafer, in place using static electricity before the process.

An electrostatic insulating film 11 is formed on the top of the electrostatic chuck body 10 made of aluminum, and the gas passage (H) is supplied inside the electrostatic chuck body 10 so that helium gas or the like can be supplied onto the electrostatic insulating film 11. 12) is formed.

In addition, a power supply hole 13 is formed inside the electrostatic chuck body 10, and a power line 15 connected to the electrostatic voltage supply unit 14 through the power supply hole 13 is embedded therein. The line 15 supplies the high voltage provided by the electrostatic voltage supply unit 14 to the conductive film 16.

In addition, the wafer is completed, the lift pin 17 embedded in the electrostatic chuck body 10 is pushed upward to unload.

In addition, a temperature control means such as a chiller 18 or a heater 19 is installed in the electrostatic chuck body 10 to control the temperature of the electrostatic chuck. In the case of the chiller 18 as the temperature control means, the electrostatic chuck body ( A flow path is formed inside 10), and the fluid for cooling is supplied to circulate in the flow path, thereby controlling the temperature of the electrostatic chuck.

The temperature control means focuses on controlling the temperature of the electrostatic chuck to the required range using a heat medium, and it is difficult to secure the temperature uniformity of the wafer only by improving the temperature control means for controlling the temperature of the electrostatic chuck.

Increasing and decreasing the temperature of the wafer in the chamber during the process typically stresses the device, and in particular the problem of temperature irregularities in the wafer, such as temperature variations between the center and the edge of the wafer, yield and productivity Greatly decreases.

Accordingly, in the electrostatic chuck of the present invention, the temperature uniforming means 21 is embedded in the interior of the electrostatic chuck body 10 for the purpose of solving the problem that the temperature of the wafer during the process and the surface temperature of the electrostatic chuck are uneven.

In particular, the temperature homogenizing means 21 is focused on ensuring the temperature uniformity of the wafer during the process, and is additionally installed separately from the temperature control means for temperature control of the electrostatic chuck, and temperature control for the purpose of temperature control of the electrostatic chuck. There is a clear difference between the means and the installation purpose and effect.

Existing temperature control means provides heat directly to the electrostatic chuck body 10 by heating or taking away the heat, thereby means for maintaining the electrostatic chuck body 10 in a certain temperature range, the temperature of the electrostatic chuck body 10 It is different from the temperature homogenization means in that it is a means for directly changing as desired.

In the electrostatic chuck of the present invention, the temperature uniforming means 21 is installed together with the temperature adjusting means so that the temperature uniformity of the electrostatic chuck is controlled by the temperature adjusting means while the temperature variation during the process is reduced. This is to uniformly adjust the temperature of the wafer and the surface temperature of the electrostatic chuck.

In the electrostatic chuck of the present invention, the temperature uniforming means 21 described above includes an electrostatic insulating film 11 formed on the surface of the electrostatic chuck in the electrostatic chuck body 10 and an electrostatic charge such as a chiller or a heater. Be positioned between the temperature control means in the lower side of the chuck body.

It can be seen that the temperature homogenizing means 21 is built so as to be close to the surface portion of the electrostatic chuck, that is, the uppermost electrostatic insulating film 11, and a chiller or the like is embedded below the temperature homogenizing means 21. The temperature of the chuck can be made uniform through the temperature homogenizing means 21 while controlling the temperature of the chuck.

The temperature homogenizing means 21 is embedded close to the surface of the electrostatic chuck for smooth heat transfer with the wafer in the electrostatic chuck body 10, and is installed in a horizontal direction immediately below the electrostatic insulating film 11, which is an electrostatic generator. In other words, the substrates are arranged horizontally in parallel with each other while directly contacting the lower surface of the electrostatic insulating layer 11 to transfer heat between the wafers through horizontal heat transfer while transferring heat between the wafers placed on the surface of the electrostatic chuck. It works.

That is, the temperature homogenizing means 21 is a heat chain that performs horizontal internal heat transfer (heat transfer in the transverse direction on the drawing) so as to achieve temperature uniformity of the entire area of the wafer when a temperature deviation occurs between each part of the wafer during the process. will be.

In other words, when a temperature deviation of the wafer occurs, the wafer receives heat in a high temperature portion of the wafer and emits heat to a low temperature portion of the wafer through horizontal heat transfer, so that the wafer maintains a uniform temperature as a whole.

In a preferred embodiment of the present invention, the temperature homogenizing means 21 may be a configuration using the heat pipe principle, while being built into the interior of the electrostatic chuck body 10 therein the space is filled with the working fluid sealed therein And a wick 24 which is enclosed and enclosed so as to form a gap with the inner wall of the space in the space 23.

As is well known, the heat pipe is a device in which the working fluid inside the sealed container transfers heat between the two ends of the container through the gas-liquid phase change process continuously, and transfers the heat using latent heat. Not only does it exhibit greater heat transfer performance than conventional heat transfer equipment using a one-phase working fluid, but also has a constant temperature along the longitudinal direction of the vessel (direction of movement of the working fluid).

In view of the fact that the temperature of the heat pipe is constant along the longitudinal direction as described above, in the present invention, the temperature equalizing means 21 using the heat pipe principle is provided between the electrostatic insulating film 11 and the temperature adjusting means.

Preferably, the temperature homogenizing means 21 is formed in a thin plate-like structure to be horizontally installed directly below the electrostatic insulating film 11 so as to smoothly exchange heat with the wafer.

The wick located inside, the core part of the heat pipe operation, is a capillary structure that returns the working fluid in the liquid state from the condenser to the evaporator, usually a mesh. Or, it has a shape of a groove (thin elongated groove), which uses the capillary phenomenon caused by the surface tension of the liquid to return the working fluid in the liquid state to the evaporator.

In the temperature homogenization means using the heat pipe principle as described above, when the temperature variation of the wafer occurs, the relatively high temperature portion of the wafer, that is, the closed container portion of the temperature homogenization means adjacent to the lower side of the wafer high temperature portion becomes the evaporation portion. The hot part of the heat vaporizes the working fluid inside the enclosed space and loses heat.

The vaporized working fluid moves through the gap between the inner wall of the sealed space and the wick due to the pressure difference to the condensation part of the temperature homogenizing means, which becomes the lower part of the wafer low temperature part (relatively low temperature part of the wafer), (Condensation) at this time, heat is transferred to the low temperature of the wafer.

The working fluid in the liquid state, which heats the low temperature of the wafer and the temperature decreases, returns to the evaporation part along the wick, and the returned working fluid vaporizes to absorb the heat of the high temperature part of the wafer, and then moves to the condensation part to release heat. Iterate cycles.

Through this process, the temperature homogenizing means acts to transfer heat from the high temperature portion of the wafer seated on the surface of the electrostatic chuck by the working fluid therein and the wick returning the working fluid.

As a result, when the temperature difference of the wafer occurs during the process, the temperature homogenization means of the present invention makes the temperature of the wafer and the surface temperature of the electrostatic chuck uniformly through the heat transfer between the high and low temperature portions of the wafer as described above. For movement and circulation, the working fluid in the enclosed space becomes a heat transfer medium that moves heat horizontally.

As described above, the temperature homogenizing means of the present invention is divided into an evaporation unit, a heat insulation unit, and a condensation unit when a temperature deviation occurs in the wafer, and when heat is applied to the evaporation unit, the working fluid vaporizes and moves to the condensation unit after the heat insulation unit, and condensation is performed. The heat is transferred to the liquid and then liquefied to return back to the evaporator through the wick.

On the other hand, in the case of the temperature homogenization means using the heat pipe principle, a high pressure is formed therein by repeating vaporization / liquefaction of the working fluid (vapourable liquid) in a vacuum, wherein an electrostatic force having a thin thickness of about 2 to 3 mm is formed. The insulating film 11 may swell, and the present invention provides a means to solve this problem neatly.

5 to 9 are plan views illustrating a support form of various support means for supporting an electrostatic insulating film, that is, for fixing the electrostatic insulating film, in an electrostatic chuck in which a temperature equalization means is built according to an embodiment of the present invention; It is a cross section.

5 to 9 are plan views of the state in which the electrostatic insulating film is removed, and sectional views are cross-sectional views of the state including the electrostatic insulating film. Means for including the same, and specific illustrations thereof are omitted.

The electrostatic insulating film 11 installed at the upper end of the electrostatic chuck body 10 is disposed in the form of closing the upper portion of the temperature equalization means 21 formed in the electrostatic chuck body 10 and the edge portion of the electrostatic chuck body 10. In the state of contact with each other, welding is performed by welding or the like.

At this time, the bonding of the electrostatic insulating film 11 may be a method such as brazing.

The electrostatic insulating film 11 installed in this way may be fixed by at least one or more supporting means 22 formed inside the temperature equalizing means 21, and thus the electrostatic insulating film 11 having a thin thickness may have an inner portion. The bottom of the can be fixed while being bonded to the plurality of support means 22 side.

At this time, the bonding between the bottom surface of the electrostatic insulating film 11 and the top surface of each support means 22 may be applied by a method such as brazing.

The support means 22 may be applied in various forms, and in the case of the electrostatic chuck, various structures for performing various functions are involved, and the support means 22 may be formed using these structures.

5 and 6, the support means 22 may be formed of a support wall using a gas supply line 25 formed to supply gas to the wafer side.

For example, the support means 22 forms a support wall of a structure enclosed side by side along the gas supply line 25 in the space 23 of the temperature homogenization means 21, and causes the support wall to be heated. The space 23 of the homogenizing means 21 and the internal space of the gas supply line 25 may be partitioned.

Accordingly, the support means 22 not only serves to supply gas without problems, but also to fix the electrostatic insulating film 11 by using the support wall so that deformation of the electrostatic insulating film does not occur. Can play a role.

Here, the support wall may be manufactured in a structure that is integrally protruded from the bottom surface of the space formed by the temperature homogenizing means during the electrostatic chuck processing, or the structure is attached to the bottom surface of the space after manufacturing a separate wall member It can also be produced.

In the case of the support means 22 using the gas supply line 25 as described above, the shape of the support wall can be implemented in various forms.

For example, the support wall of the support means 22 has a form extending radially with respect to the center of the electrostatic chuck and is divided into a plurality of shapes while drawing in one integral form, or one circle trajectory, and at the same time It may be formed in a form arranged in the center and concentric circles, or a combination of the above two forms in the form of a radial arrangement form and a concentric arrangement form in one place.

In this case, when the support wall of the support means 22 is arranged in a concentric shape, a double circle shape having a plurality of different diameters gathered in a concentric shape may be applied.

As shown in Fig. 7, an example in which the support means 22 is configured using the gas passage 12 formed in the electrostatic chuck is shown.

For example, the support means 22 may be formed of a support wall having a shape surrounding the periphery of the gas passage 12 and partitioning the space 23 of the temperature homogenizing means 21 and the interior of the gas passage 12. Can be.

In addition, as the support means 22 for fixing the electrostatic insulating film 11, in FIG. 8, the space 23 and the lift pin hole 20 of the temperature homogenizing means 21 are enclosed around the lift pin hole 20. ) And a support wall having a shape of partitioning the inside of the space). In FIG. 9, the space 23 and the inside of the power supply hole 13 of the temperature homogenizing means 21 are enclosed around the power supply hole 13. It provides a support wall in the form of partitioning.

On the other hand, although not shown in the drawings, the electrostatic insulating film (2) is formed by using a support means 22 formed around the periphery of the sensor hole provided in the electrostatic chuck and partitioning the space portion of the temperature homogenizing means and the sensor hole inside. 11) can be fixed.

As such, the electrostatic chuck is essentially provided with a hole for gas supply, a lift pin for ejecting, and a sensor hole, a power contact portion, and the like. By firmly holding the electrostatic insulating film on the upper end of the electrostatic chuck by means, it is possible to effectively prevent the electrostatic insulating film from swelling even at high pressure of the working fluid used in the temperature homogenizing means, in particular, the problem of swelling in the middle portion.

In the above, certain preferred embodiments according to the present invention have been illustrated and described.

However, the present invention is not limited to the above-described embodiment, and a person having ordinary skill in the art to which the present invention belongs should have as many without departing from the gist of the technical idea of the present invention described in the claims below. Various changes may be made.

1 is a schematic cross-sectional view showing a conventional electrostatic chuck for semiconductor manufacturing.

2 is a schematic cross-sectional view showing an example in which a chiller is installed in a conventional electrostatic chuck for semiconductor manufacturing.

3 is a schematic cross-sectional view showing an example in which a heater is installed in a conventional electrostatic chuck for semiconductor manufacturing.

Figure 4 is a schematic cross-sectional view showing an electrostatic chuck with a built-in temperature uniformization means according to an embodiment of the present invention

5 is a plan view and a cross-sectional view showing an example of a support form using a gas supply line in an electrostatic chuck in which the temperature homogenization means is built according to an embodiment of the present invention.

Figure 6 is a plan view and a cross-sectional view showing another example of the support form using the gas supply line in the electrostatic chuck is built in the temperature homogenizing means according to an embodiment of the present invention

7 is a plan view and a cross-sectional view showing a support form using a gas passage in an electrostatic chuck in which a temperature homogenization means is built according to an embodiment of the present invention.

8 is a plan view and a cross-sectional view showing a support form using a lift pin hole in an electrostatic chuck in which a temperature equalization means is built according to an embodiment of the present invention.

9 is a plan view and a cross-sectional view showing a support form using a power supply hole in an electrostatic chuck in which a temperature equalization means is built according to an embodiment of the present invention;

<Description of the symbols for the main parts of the drawings>

10 electrostatic chuck body 11: electrostatic insulating film

12 gas passage 13 power supply hole

14: power supply 15: power line

16 conductive film 17 lift pin

18: chiller 19: heater

20: lift pin hole 21: temperature homogenization means

22: support means 23: space part

24: Wick 25: Gas supply line

Claims (13)

delete delete delete In the electrostatic chuck for fixing the wafer in place using the electrostatic force, It is formed under the electrostatic insulating film 11 formed on the top of the electrostatic chuck body 10, and the temperature uniformity to uniformize the temperature of the wafer while exchanging heat with the wafer when the temperature deviation of the wafer occurs during the process using the heat pipe principle Means 21, wherein the electrostatic insulating film 11 located above the temperature equalizing means 21 has at least one supporting means formed on the inside of the upper edge of the electrostatic chuck body 10 as well as the inside thereof. It is fixed by the 22, and the support means 22 for fixing the electrostatic insulating film 11 is a support wall for partitioning the temperature equalization means side and the gas supply line side while enclosing side by side along the gas supply line 25 Electrostatic chuck with a built-in temperature homogenizing means, characterized in that made. 5. An electrostatic chuck incorporating a temperature homogenizing means as claimed in claim 4, characterized in that the support means (22) are one integrally extending support wall having a shape extending radially with respect to the center of the electrostatic chuck. 5. The electrostatic force with temperature uniformizing means according to claim 4, wherein the supporting means 22 is a supporting wall which is divided into a plurality of pieces while drawing one circular trajectory and arranged concentrically with the center of the electrostatic chuck. chuck. The electrostatic chuck of claim 6, wherein the support wall has a shape of a double circle in which several pieces having different diameters are concentrically gathered. The method according to claim 4, wherein the support means 22 has a shape extending radially with respect to the center of the electrostatic chuck and one integrally continued support wall, and divided into a plurality of and drawing a circular trajectory, the center of the electrostatic chuck And an electrostatic chuck with a built-in temperature homogenizing means, characterized in that the supporting wall is formed in a concentric manner. In the electrostatic chuck for fixing the wafer in place using the electrostatic force, It is formed under the electrostatic insulating film 11 formed on the top of the electrostatic chuck body 10, and the temperature uniformity to uniformize the temperature of the wafer while exchanging heat with the wafer when the temperature deviation of the wafer occurs during the process using the heat pipe principle Means 21, wherein the electrostatic insulating film 11 located above the temperature equalizing means 21 has at least one supporting means formed on the inside of the upper edge of the electrostatic chuck body 10 as well as the inside thereof. It is fixed by the 22, and the support means 22 for fixing the electrostatic insulating film 11 is characterized in that it consists of a support wall for partitioning the temperature uniformity means side and the gas passage side while surrounding the periphery of the gas passage 12 An electrostatic chuck with a built-in temperature equalization means. In the electrostatic chuck for fixing the wafer in place using the electrostatic force, It is formed under the electrostatic insulating film 11 formed on the top of the electrostatic chuck body 10, and the temperature uniformity to uniformize the temperature of the wafer while exchanging heat with the wafer when the temperature deviation of the wafer occurs during the process using the heat pipe principle Means 21, wherein the electrostatic insulating film 11 located above the temperature equalizing means 21 has at least one supporting means formed on the inside of the upper edge of the electrostatic chuck body 10 as well as the inside thereof. It is fixed by the 22, and the support means 22 for fixing the electrostatic insulating film 11 is characterized by consisting of a support wall for partitioning the temperature homogenizing means side and the lift pin hole side while surrounding the periphery of the lift pin hole 20 An electrostatic chuck with a built-in temperature equalization means. In the electrostatic chuck for fixing the wafer in place using the electrostatic force, It is formed under the electrostatic insulating film 11 formed on the top of the electrostatic chuck body 10, and the temperature uniformity to uniformize the temperature of the wafer while exchanging heat with the wafer when the temperature deviation of the wafer occurs during the process using the heat pipe principle Means 21, wherein the electrostatic insulating film 11 located above the temperature equalizing means 21 has at least one supporting means formed on the inside of the upper edge of the electrostatic chuck body 10 as well as the inside thereof. It is fixed by the 22, and the support means 22 for fixing the electrostatic insulating film 11 is formed of a support wall that partitions the temperature equalization means side and the power supply hole side while surrounding the power supply hole (13) An electrostatic chuck with a built-in temperature homogenizing means. In the electrostatic chuck for fixing the wafer in place using the electrostatic force, It is formed under the electrostatic insulating film 11 formed on the top of the electrostatic chuck body 10, and the temperature uniformity to uniformize the temperature of the wafer while exchanging heat with the wafer when the temperature deviation of the wafer occurs during the process using the heat pipe principle Means 21, wherein the electrostatic insulating film 11 located above the temperature equalizing means 21 has at least one supporting means formed on the inside of the upper edge of the electrostatic chuck body 10 as well as the inside thereof. 22, and the support means 22 for fixing the electrostatic insulating film 11 is a temperature homogenization means, characterized in that the support wall for partitioning the temperature uniformity means side and the sensor hole side while surrounding the periphery of the sensor hole. Built-in electrostatic chuck. The method of claim 4, wherein the electrostatic insulating film 11 is fixed to the edge portion of the upper end of the electrostatic chuck body fixing the bottom surface of the electrostatic insulating film 11 and the support means, the temperature homogenizing means characterized in that the fixing means Built-in electrostatic chuck.

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