KR100910082B1 - Led multi-layer metals primary electrodes manufacturing process and installation - Google Patents

Abstract

The present invention relates to a method and a manufacturing apparatus for an LED multilayer metal primary electrode, wherein the epitaxial wafer is installed in a manufacturing apparatus after washing, and the multilayer metal electrode is manufactured. A multi-layer metal electrode by a magnetic mask comprising a magnetic unit, a loading port, a magnetic mask and a plurality of metal sources, and having a plurality of contact windows installed at the bottom of the loading hole to fix the epitaxial wafer to the receiving groove of the loading hole. This formed metal plating film deposition method is used.

Description

Manufacturing method and apparatus for manufacturing light emitting diode multilayer metal primary electrode {LED MULTI-LAYER METALS PRIMARY ELECTRODES MANUFACTURING PROCESS AND INSTALLATION}

1 is a process flow diagram of a multilayer metal primary electrode in accordance with the present invention.

Figure 2 is a schematic structure of the manufacturing apparatus of a multilayer metal primary electrode according to the present invention.

3 is a flow chart of a preferred manufacturing procedure of a multilayer metal primary electrode according to the present invention.

4 is a schematic view of a multilayer primary electrode formed after deposition according to the present invention.

5 is a schematic view of a structure in which the magnetic mask and the mounting hole of the present invention are removed.

6 is a process chart of manufacturing a conventional multilayer metal primary electrode.

<Explanation of symbols for the main parts of the drawings>

C: epitaxial wafer 14: magnetic mask

10: manufacturing apparatus 15: contact window

11: loading base 30: metal source

12: magnetic unit 31: crucible

13: loading port 40: multilayer metal electrode

The present invention relates to a method and apparatus for manufacturing a light emitting diode multilayer metal primary electrode, and more particularly, to a method for manufacturing a multilayer metal electrode for depositing a multilayer metal source through a contact window of a magnetic mask using a metal plating film deposition method; Relates to a device.

The light emitting diode is provided with a solid-state semiconductor photoelectric device of P-type and N-type two electrodes, and conducts a very small amount of current between the two electrodes to emit light, and the filament of the light bulb is applied by an externally applied power source. Instead of emitting light, the light-emitting diode considers cold light emitting light which emits electrons and electric paths. Light emitting diodes are characterized by small size, low power consumption, fast reflection speed, high stability and long life. LEDs are widely used in indicators, display devices, outdoor signs, telephone backlight light source, LCD backlight light source. Methods of making these light emitting diodes generally available in the relevant market include gallium phosphide (GaP) substrates, i.e., two-element substrates, or GaAsP substrates, three-element substrates, and higher brightness and greater efficiency. There is a need for an AlInGaP substrate, i.e., a selection of substrates including quaternary substrates.

Next, a method for producing a multilayer metal electrode on an epitaxial wafer is included. As shown in FIG. 6, a conventional method of manufacturing a multilayer metal electrode includes first cleaning an epitaxial wafer of AlInGaP (S1), and then cleaning the epitaxial wafer to deposit the primary metals (AuBe and Au). First plating is performed (S2), the first photolithography process (S3) is produced by drawing a photoresist layer, and further subjected to the first metal chemical etching (S4) to form a metal pattern (metal patter) After the first heat treatment (S5), secondary plating is carried out by deposition of secondary metals (Ti and Au) (S6), and a photoresist layer is formed through a second photolithography process (S7), and again. The secondary secondary metal chemical etching is performed (S8), and finally, the secondary heat treatment is further performed (S9) to form a multilayer metal electrode of the light emitting diode, and the ohmic contact method between the metal electrode and the material is completed. Perform evangelism. However, the conventional manufacturing technique requires plating, image, and etching processes of the secondary plating layer before and after each, even if the conventional production manufacturing technique is already very mature in the manufacturing process, the required manufacturing process procedure is relatively cumbersome. Related problems inherently present in the manufacturing process, for example, metals generated due to excessive etching of metal or poor surface contact between the first and second layer metal layers or due to excessive etching in the second layer. Problems such as peeling or insufficient tensile and propulsion forces appear.

SUMMARY OF THE INVENTION The main object of the present invention is to provide a method and apparatus for manufacturing a light emitting diode multilayer metal primary electrode, wherein the multilayer metal electrode is used in a primary manufacturing process without using a photolithography process, a wet chemical etching process, or a photoresist process. There is provided a method and apparatus for manufacturing a primary electrode of a light emitting diode to be manufactured. In order to achieve the above object, the epitaxial wafer is cleaned and then includes a deposition plate, a magnetic member, a loading hole, a magnetic mask and a plurality of metal sources, and loading the loading hole in the manufacturing apparatus. An epitaxial wafer is loaded into a stack and multiple metal sources form a multilayer metal electrode through metal plating deposition of a contact window suitable for a magnetic mask. The magnetic mask is disposed on the wafer, and the magnetic member of the bottom of the loading hole is attached to the magnetic mask, and simultaneously fixes the epitaxial wafer. After finally removing the magnetic mask and the loading hole after the multilayer metal electrode is completed, heat treatment proceeds to complete the fabrication of the light emitting diode multilayer metal electrode.

The present invention relates to a method and apparatus for manufacturing a light emitting diode multilayer metal primary electrode, using a loading hole specially designed as shown in FIG. 2 without using a photolithography process and a wet chemical etching process. By combining the magnetic unit and the magnetic mask to attach to the epitaxial wafer surface and directly depositing a thin film of a multi-layer metal, the production of the metal electrode is completed.

1 is a flow chart illustrating a method of manufacturing a light emitting diode metal electrode in the present invention, which first cleans the surface of a light emitting diode epitaxial wafer prior to plating, as shown in step a, using a chemical agent such as an acid or a basic. Thus, oxides, contaminants, metal ions, and the like on the epitaxial wafer surface are removed. The chemical agent used in the washing process consists of an inorganic solution in which one or two forms selected from sulfuric acid, nitric acid, hydrogen peroxide, phosphoric acid and hydrochloric acid are mixed in an appropriate ratio.

In step b, the cleaned epitaxial wafer is installed in the loading port of the manufacturing apparatus and the magnetic mask is arranged on the wafer. In step c, using a plurality of metal sources, a metal source is selected according to the order of the metal layers to be deposited to perform metal plating film deposition. After the deposition is completed, the magnetic mask and the loading hole are removed in step d, and the formation of the multilayer metal electrode is completed in step e.

As shown in FIG. 2, the manufacturing apparatus of the present invention includes at least one stacking support portion 11 and an accommodation groove provided on the stacking support portion 11 to accommodate the epitaxial wafer C. It is installed between the loading hole 13, the loading support portion 11 and the loading hole 13, and the material is generally made of aluminum copper magnet (AlFeB), samarium-cobalt alloy (SmCo) magnet, or The thickness is between 10 and 300 µm on the magnetic unit 12 made of a magnetic material such as an oxide magnet and the epitaxial wafer C already disposed in the receiving groove 16 of the loading hole 13, preferably A multilayer including a magnetic mask 14 made of a soft thin film made of 30 탆 magnetic stainless steel or nickel iron alloy, and a plurality of contact windows 15 placed on the magnetic mask 14 for forming a multilayer metal electrode. Form a metal electrode. A plurality of metal sources 30 are disposed in each different crucible 31 by means of a metal material of the intended purpose. In a preferred embodiment, these crucibles 31 are loaded with metal liquids of AuBe, Ti, Au, respectively, and the arrangement of each crucible 31 is arranged in a circular or straight line, and schematically shows a method of manufacturing a light emitting diode multilayer metal electrode. Referring to FIG. 3, first, the epitaxial wafer is washed, then installed in the loading hole, and the magnetic mask is arranged on the wafer. The magnetic mask 14 is attached to the epitaxial wafer C, and attaches the metal magnetic mask 14 using the magnetic unit 12 at the bottom of the loading hole 13, and furthermore, the epitaxial wafer C. ) Is firmly fixed in the receiving groove 16 of the loading hole 13. Each of AuBe, Ti, and Au is loaded into a corresponding crucible 31 to perform metal plating film deposition (in a preferred embodiment, evaporation method) in the order of AuBe, Ti, Au. The number of metal plating film depositions of AuBe, Ti, and Au may be selected. For example, in the preferred embodiment, the deposition order is to form Au in the uppermost layer allowing direct formation of the multilayer metal electrode 40 on the epitaxial wafer C surface, whereby a contact window (as shown in FIG. The multilayer metal electrode 40 is directly formed in 15). Finally, the magnetic mask and the loading hole are removed, the light emitting diode multilayer metal electrode is formed, and as shown in FIG. 5, the epitaxial wafer C is finally oven ovened at a temperature of 300 to 1000 ° C. The tube is subjected to a heat treatment for about 5 to 50 minutes, thereby forming an ohmic contact between the epitaxial wafer C surface and the metal electrode, thereby producing a complete metal electrode.

In the present invention, the metal deposition source is actually projected at right angles to the epitaxial wafer, thus forming a very uniform metal electrode on the epitaxial wafer. In addition to extending the length and width of the reaction chamber, the curvature of the deposited plate is changed to be smaller (close to the vertical oblique line), so that the metal deposition source can be actually projected to the wafer at right angles.

Therefore, the manufacturing apparatus of the present invention, without using a photolithography process and a wet chemical metal etching process, has the advantage of manufacturing the metal electrode of the light emitting diode, the manufacturing process is simple and fast, and greatly reduce the cost of manufacturing the metal electrode, Problems encountered in the photolithography process and the wet chemical metal etching process that are conventionally used can be solved.

In the above embodiment, the technology and advantages of the present invention have been described, and an object thereof is fully understood based on the contents and examples of the present invention. And features similar or alternative to those falling within the object and claims of the present invention.

Claims (14)

In the method of manufacturing a light emitting diode multilayer metal primary electrode, Cleaning the epitaxial wafer; Installing the cleaned epitaxial wafer in a carrier of a manufacturing apparatus, arranging a magnetic mask including a contact window on the epitaxial wafer, Forming a multilayer metal primary electrode on the epitaxial wafer by sequentially stacking different metal materials through the contact window using a metal plating film deposition method; Removing the manufacturing apparatus; and manufacturing a light emitting diode multilayer metal primary electrode. The method of claim 1, wherein an acid or basic chemical agent is used to clean the epitaxial wafer surface. The method of claim 2, wherein the chemical agent comprises an inorganic solution containing one or two selected from sulfuric acid, nitric acid, hydrogen peroxide, phosphoric acid, and hydrochloric acid. The method of claim 2, wherein the heat treatment is provided after completion of the removing step. The process according to claim 4, wherein the epitaxial wafer (C) is subjected to a heat treatment for 5 to 50 minutes in an oven tube at a temperature of 300 to 1000 ° C., so that the epitaxial wafer (C) is between the surface of the epitaxial wafer (C) and the metal electrode. Method of manufacturing light emitting diode multilayer metal primary electrode to form ohmic contact In the manufacturing apparatus of the light emitting diode multilayer metal primary electrode, Load bearing section, A loading hole provided on the loading support portion and including a receiving groove for receiving an epitaxial wafer; A magnetic unit installed between the loading base and the loading opening, A magnetic mask which is provided with a contact window and fixes the epitaxial wafer in the loading hole by using the magnetic unit at the bottom of the loading hole; A metal source each loaded with a different metal material, An apparatus for producing a multilayer metal primary electrode of a light emitting diode, wherein a metal plating film is deposited to form a multilayer metal electrode by stacking the different metal materials on an epitaxial wafer through a contact window. The apparatus of claim 6, wherein the magnetic unit is made of AlFeB, SmCo, or a magnetic material of an oxide magnet. The apparatus of claim 6, wherein the magnetic mask comprises a flexible thin film made of magnetic stainless steel or nickel iron alloy. The apparatus of claim 6, wherein the magnetic mask has a thickness in a range of 10 to 300 μm. The apparatus of claim 6, wherein the magnetic mask has a thickness of 30 μm. The apparatus of claim 6, wherein the metal source includes crucibles on which the different metal materials are loaded, and the crucibles are arranged in a circular or straight line. The apparatus of claim 6, wherein the different metal materials are arranged in corresponding crucibles provided in the metal source based on a kind of metal material. The apparatus of claim 12, wherein the metal material is a metal liquid of AuBe, Ti, or Au. The apparatus according to claim 13, wherein each metal material is deposited with a metal plating film in the order of AuBe, Au, and Ti to form Au on the uppermost layer.

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