KR100892573B1 - Novel manganese amino-alkoxide complexes and process for preparing thereof - Google Patents
Novel manganese amino-alkoxide complexes and process for preparing thereof Download PDFInfo
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Abstract
Description
본 발명은 신규의 망간 아미노알콕사이드 화합물에 관한 것으로서, 보다 상세하게는 망간 및 망간 산화물 박막을 위한 선구 물질 및 나노 크기의 망간 및 망간 산화물 입자 제조를 위한 선구 물질, 그리고 LiAlMnO4, LiCoMnO4 (리튬 2차 전지용 리튬-망간 산화물), LaxCayMnO3 (자기 냉각 기관 개발), Mn/Ga alloy (자기-광학 메모리) 등 망간을 포함하는 합금 및 나노물질 제조를 위한 선구 물질로서 유용한 망간 아미노알콕사이드 화합물 및 그 제조 방법에 관한 것이다.The present invention relates to a novel manganese aminoalkoxide compound, and more particularly, precursors for manganese and manganese oxide thin film and precursors for preparing nano-sized manganese and manganese oxide particles, and LiAlMnO 4 , LiCoMnO 4 (lithium 2 Lithium-manganese oxide for secondary batteries), La x Ca y MnO 3 (Manufacture of magnetic cooling engine), Mn / Ga alloy (magnetic-optical memory), and manganese aminoalkoxide compounds useful as precursors for the production of alloys and nanomaterials including manganese, and methods for producing the same.
MnO, Mn3O4, Mn2O3, MnO2 등 다양한 형태로 존재하는 망간 산화물은 전극 물질(electrode materials), 전기 화학적 축전지(electrochemical capacitors), 연 자성 물질(soft magnetic materials)의 제조 에 이용될 수 있다. 그리고 망간 산화물은 거대 자기저항(colossal magnetoresistance)과 금속 절연체 전이(metal-insulater transitions)와 같은 다양한 전기적 자기적 성질을 가지는 금속 산화물 페로브스카이트(magnetic oxide perovskite) 화합물을 합성하는데 기판으로 사용된다 (Dakhel, A.A. Thin Solid Films. 2006, 496, 353; Nilsen, O.; Fjellvag, H.; Kjekshus, A. Thin Solid Films . 2003, 444, 44; Nardi,J.C.Z. J. Electrochem . Soc . 1985, 132, 1787; Reddy, R.N.; Reddy, G.R. J. Power Sources 2004, 132, 315; Shao, C.; Guan, H; Liu, Y.; Li, X.; Yang, X. J. Solid State Chem . 2004, 177, 2628; Rao, C.N.R.; Cheetham, A.K. Adv . Mater . 1997, 9, 1009; Kim, K.J.; Park, Y.R. J. Cryst . Growth 2004, 270, 162; Regulski, M.; Prezenioslo, I.; Hohlwein, D. Schneider, R.S. J. Alloys Compd . 2004, 362, 236). 특히 MnO2는 전기 변색(electrochromic) 성질을 나타내며, 탄화수소의 산화, 질소 산화물의 산화 및 환원, 오존의 분해 촉매로 이용되며, 무엇보다도 전지에 주로 이용된다(Craciun, N.; Dulamita, N. Catal. Lett. 1997, 46, 229; Chem, L.; Horiuchi, T.; Mori, T. Catal . Lett . 1999, 60, 237; Oyama, S.T. Catal. Rev.-Sci. Eng. 2000, 42, 279; Garnich, F.; Yu. P.C.; Lampert, C.M. Sol . Energy Mater . 1990, 20, 265; Cordoba de Torresi, S. I.; Gorenstein, A. Electrochim . Acta 1992, 37, 2015; Yosida, A. ; Nishino, A. J. Electrochem . Soc . 1989, 136, 1896).Manganese oxides in various forms such as MnO, Mn 3 O 4 , Mn 2 O 3 , and MnO 2 are used for the production of electrode materials, electrochemical capacitors, and soft magnetic materials. Can be. Manganese oxide is also used as a substrate to synthesize metal oxide perovskite compounds with various electrical and magnetic properties such as colossal magnetoresistance and metal-insulater transitions ( Dakhel, AA Thin Solid Films. 2006 , 496, 353; Nilsen, O .; Fjellvag, H .; Kjekshus, A. Thin Solid Films . 2003 , 444, 44; Nardi, JCZ J. Electrochem . Soc . 1985 , 132, 1787; Reddy, RN; Reddy, GR J. Power Sources 2004 , 132, 315; Shao, C .; Guan, H; Liu, Y .; Li, X .; Yang, X. J. Solid State Chem . 2004 , 177, 2628; Rao, CNR; Cheetham, AK Adv . Mater . 1997 , 9, 1009; Kim, KJ; Park, YR J. Cryst . Growth 2004 , 270, 162; Regulski, M .; Prezenioslo, I .; Hohlwein, D. Schneider, RS J. Alloys Compd . 2004 , 362, 236). In particular, MnO 2 exhibits electrochromic properties and is used as a catalyst for oxidation of hydrocarbons, oxidation and reduction of nitrogen oxides, and decomposition of ozone, and most of all in batteries (Craciun, N .; Dulamita, N. Catal). Lett. 1997, 46, 229; Chem, L .; Horiuchi, T .; Mori, T. Catal . Lett . 1999 , 60, 237; Oyama, ST Catal. Rev.-Sci. Eng. 2000, 42, 279. ; garnich, F .; Yu PC; .. Lampert, CM Sol Energy Mater . 1990 , 20, 265; Cordoba de Torresi, SI; Gorenstein, A. Electrochim . Acta 1992 , 37, 2015; Yosida, A .; Nishino, A. J. Electrochem . Soc . 1989 , 136, 1896).
망간 산화물을 제조하기 위한 방법으로는 음극 산화(anodic oxidation), 전기도금(electrodeposition), 전기분해 증착, 열분사(spray-pyrolysis) 등과 같은 용액 상 화학 공정 및 전자 빔 증발(electorn beam evaporation), 화학 기상 증착 (chemical vapor deposition, CVD), 스퍼터링(sputtering), 분자 빔 에피텍 시(molecular beam epitaxy), 펄스 레이저 증착(pulsed laser deposition)등에 의해 주로 제조되고 있으며, 현재 원자층 증착(atomic layer deposition, ALD)에 의해서도 제조되고 있다(Ord, J.L.; Huang, Z.Q. J. Electrochem . Soc . 1985, 132, 1183; Mindt, W. Electrochem . Soc . 1971, 118, 93; Rizzi, G.A.; Zanoni, R.; Di Siro, S.; Perriello, L.; Granozzi, G. Surf . Sci . 2000, 462, 187; Guo, L.W.; Makino, H.; Ko, H.J.; Chen, Y.F.; Hanada, T.; Peng, D.L.; Inaba, K.; Yao, T. J. Cryst . Growth 2001, 227, 955; Neubeck, W.; Ranno, L.; Hunt, M.B.; Vettier, C.; Givord, D. Appl . Surf . Sci . 1999, 138, 195).Methods for producing manganese oxide include solution phase chemical processes such as anodic oxidation, electrodeposition, electrolytic deposition, spray-pyrolysis, and electron beam evaporation, chemistry. It is mainly manufactured by chemical vapor deposition (CVD), sputtering, molecular beam epitaxy, pulsed laser deposition, etc., and is currently manufactured by atomic layer deposition, ALD) (Ord, JL; Huang, ZQ J. Electrochem . Soc . 1985 , 132, 1183; Mindt, W. Electrochem . Soc . 1971 , 118, 93; Rizzi, GA; Zanoni, R .; Di Siro, S .; Perriello, L .; Granozzi, G. Surf Sci 2000, 462, 187;.. Guo, LW; Makino, H .; Ko, HJ; Chen, YF; Hanada, T .; Peng, DL ; Inaba, K .; Yao, T. J. Cryst Growth 2001, 227, 955;. Neubeck, W .; Ranno, L .; Hunt, MB;.. Vettier, C .; Givord, D. Appl Surf Sci. 1999 , 138, 195).
위에서 언급한 방법들을 통하여 망간 및 망간 산화물, 그리고 망간을 포함하는 물질을 제조하기 위해서 사용된 선구 물질에는 Mn(thd)3 (thd = 2,2,6,6,-tetramethyl-3,5-heptanedionate), 망간 옥살레이트 (manganese oxalate) 등이 알려져 있다. 이러한 선구 물질을 사용할 경우 기체 상에서 원하지 않는 반응이 진행되거나, 탄소나 할로겐에 의한 오염, 낮은 열 안정성, 낮은 증기압, 고온에서만 증착이 일어나거나 증착한 막의 순도가 낮고 표면의 고르기가 좋지 않은 등 여러 문제점이 있다(Nakamura, T.; Tai, R.; Nishimura, T.; Tachibana, K. J. Electrochem . Soc ., 2005, 152, C584; Nilsen, O.; Fjellvag, H.; Kjekshus, A. Thin Solid Films . 2003, 444, 44; Ahmad, T.; Ramanujachary, K. V.; Lofland, S. E.;Ganguli, A. K. J . M a t e r . C h e m . , 2 0 0 4 , 1 4 , 3 4 0 6; Bessergenev, V.G.; Pereira, R.J.F.; Botelho do Rego, A. M. Surface & Coatings Technology 2007, 201, 9141).The precursors used to prepare manganese, manganese oxide, and manganese-containing materials by the above-mentioned methods include Mn (thd) 3 (thd = 2,2,6,6, -tetramethyl-3,5-heptanedionate ), Manganese oxalate and the like are known. The use of these precursors results in undesired reactions in the gas phase, contamination by carbon or halogens, low thermal stability, low vapor pressure, deposition only at high temperatures, low purity of the deposited film and poor surface quality. (Nakamura, T .; Tai, R .; Nishimura, T .; Tachibana, K. J. Electrochem . Soc ., 2005, 152, C584; Nilsen, O .; Fjellvag, H .; Kjekshus, A. Thin Solid Films . 2003 , 444, 44; Ahmad, T .; Ramanujachary, KV; Lofland, SE; Ganguli, AK J. M ater. C hem. , 2 0 0 4, 1 4, 3 4 0 6; Bessergenev, VG; Pereira, RJF; Botelho do Rego, AM Surface & Coatings Technology 2007, 201, 9141).
본 발명자들은 새로운 리간드를 도입하여 망간에 디알킬아미노기가 배위하도록 함으로서 탄소나 할로겐의 오염을 일으키지 않으며 열적 안정성과 휘발성이 개선될 뿐만 아니라 좀더 낮은 온도에서도 쉽게 망간 및 망간 산화물, 그리고 망간을 포함하는 물질을 제조하기 위한 신규의 망간 선구 물질을 개발하기에 이르렀다. The present inventors introduced a new ligand to coordinate the dialkylamino group in manganese, which does not cause contamination of carbon or halogen, improves thermal stability and volatility, and easily includes manganese and manganese oxide, and manganese at lower temperatures. It has led to the development of new manganese precursors for the preparation of.
본 발명의 목적은 양질의 망간 및 망간 산화물 박막과 나노입자, 그리고 LiAlMnO4, LiCoMnO4, LaxCayMnO3, Mn/Ga 등과 같은 망간을 포함하는 화합물을 형성하기 위해 열적으로 안정하고 휘발성이 증가된 신규의 망간 화합물 선구 물질 및 그 제조방법을 제공하는 데 있다.An object of the present invention is to provide high quality manganese and manganese oxide thin films and nanoparticles, and LiAlMnO 4 , LiCoMnO 4 , La x Ca y MnO 3 , Mn / Ga The present invention provides a novel manganese compound precursor that is thermally stable and has increased volatility to form a compound including manganese, and the like, and a method of preparing the same.
본 발명은 상기 목적을 달성하기 위하여, 하기 화학식 1로 표시되는 망간 아미노알콕사이드 화합물을 제공한다. The present invention provides a manganese aminoalkoxide compound represented by the following formula (1) to achieve the above object.
[화학식 1][Formula 1]
[상기 식에서 A는 할로겐으로 치환되거나 치환되지 않은 선형 또는 분지쇄의 C2-C10의 알킬렌이고; R1 및 R2는 서로 독립적으로 할로겐으로 치환되거나 치환되지 않은 C1~C7 선형 또는 분지형 알킬이다.][Wherein A is a linear or branched C 2 -
더 상세하게는 상기 화학식 1의 망간 아미노알콕사이드 화합물은 하기 화학식 2로 표시되는 망간 아미노알콕사이드 화합물을 포함한다.More specifically, the manganese aminoalkoxide compound of Formula 1 includes a manganese aminoalkoxide compound represented by Formula 2 below.
[화학식 2][Formula 2]
[상기 식에서, m은 1 내지 3이고; R1 및 R2는 서로 독립적으로 불소로 치환되거나 치환되지 않은 C1~C5 선형 또는 분지형 알킬이며; R3 및 R4는 서로 독립적으로 수소 또는 불소로 치환되거나 치환되지 않은 선형 또는 분지쇄의 C1-C5의 알킬이다.][Wherein m is 1 to 3; R 1 and R 2 are, independently from each other, C 1 -C 5 linear or branched alkyl, optionally substituted with fluorine; R 3 and R 4 independently of one another are linear or branched C1-C5 alkyl, optionally substituted with hydrogen or fluorine.]
특히 상기 화학식 2에서 m이 1 또는 2인 망간 아미노알콕사이드 화합물이 바람직하며, 구체적으로는 상기 화학식 2에서 R1 및 R2는 서로 독립적으로 CH3, CF3, C2H5, CH(CH3)2 및 C(CH3)3로부터 선택되며, R3 및 R4는 서로 독립적으로 수소, CH3, CF3, C2H5, CH(CH3)2 및 C(CH3)3로부터 선택되는 망간 아미노알콕사이드 화합물이 예시된다.In particular, a manganese aminoalkoxide compound having m of 1 or 2 in Formula 2 is preferable, and specifically, in Formula 2, R 1 and R 2 independently of each other are CH 3 , CF 3 , C 2 H 5 , CH (CH 3 ) Is selected from 2 and C (CH 3 ) 3 , R 3 and R 4 are independently selected from hydrogen, CH 3 , CF 3 , C 2 H 5 , CH (CH 3 ) 2 and C (CH 3 ) 3 Illustrative manganese aminoalkoxide compounds are illustrated.
이하, 본 발명을 더욱 상세히 설명한다. Hereinafter, the present invention will be described in more detail.
본 발명에 따른 화학식 1의 망간 아미노알콕사이드 화합물은 비활성 아르곤 또는 질소 분위기에서 하기 화학식 3의 망간 화합물과 2당량의 하기 화학식 4의 아미노 알코올 화합물을 반응시켜 제조할 수 있다.The manganese aminoalkoxide compound of
[화학식 1][Formula 1]
[화학식 3][Formula 3]
[화학식 4][Formula 4]
[상기 화학식 1 및 화학식 4에서, A는 할로겐으로 치환되거나 치환되지 않은 선형 또는 분지쇄의 C2-C10의 알킬렌이고; R1 및 R2는 서로 독립적으로 할로겐으로 치환되거나 치환되지 않은 C1~C7 선형 또는 분지형 알킬이다.][In Formula 1 and Formula 4, A is a linear or branched C 2 -
반응 생성물인 화학식 1의 화합물은 푸리에 변환 적외선 분광법 (Fourier transform infrared spectroscopy, FT-IR) [도 1 및 도 2] 및 원소 분석법 (elemental analysis, EA)을 이용하여 확인하였다. 이와 같이 제조된 유기 망간 2가 화합물인 망간(II) 아미노알콕사이드 화합물은 상온에서 흰색 고체이며, 일부 화합물은 유기 용매에 잘 녹지 않으나, 화학식 2의 R3 및 R4가 비대칭적으로 치환될 경우 유기 용매에 잘 녹는 특성을 나타낸다.The compound of
본 발명에서 합성한 망간 화합물들의 열 적 안정성 및 휘발성 그리고 분해 온도는 열 무게 분석법/시차 열 분석법 (thermogravimetric analysis/differential thermal analysis, TGA/DTA)을 이용하여 분석하였다. 도 3에 나타낸 바와 같이 (디메틸아미노-2-메틸-2-프로폭시) 망간(II) [Mn(dmamp)2] 화합물의 경우에 있어서는 293~329 ℃사이에서 급격한 질량 감소가 일어나는 것을 확인할 수 있다.The thermal stability, volatility and decomposition temperature of the manganese compounds synthesized in the present invention were analyzed using thermogravimetric analysis / differential thermal analysis (TGA / DTA). As shown in FIG. 3, in the case of the (dimethylamino-2-methyl-2-propoxy) manganese (II) [Mn (dmamp) 2 ] compound, it can be seen that a sharp mass decrease occurs between 293 and 329 ° C. .
상기 화학식 1의 망간 아미노알콕사이드 화합물을 선구 물질로 사용하여 금속 유기물 화학 증착법(MOCVD)과 같은 통상적인 방법으로 망간 및 망간 산화물의 박막, 망간 및 망간 산화물의 나노 입자 또는 망간을 포함하는 이종금속 화합물 등의 망간 화합물을 제조할 수 있다.Using a manganese aminoalkoxide compound of Formula 1 as a precursor, a thin film of manganese and manganese oxide, a nanoparticle of manganese and manganese oxide, or a dissimilar metal compound including manganese by a conventional method such as metal organic chemical vapor deposition (MOCVD) The manganese compound of can be manufactured.
상술한 바와 같이, 본 발명의 망간 아미노알콕사이드 화합물은 망간에 디알 킬아미노기가 배위되어 탄소나 할로겐의 오염을 일으키지 않으며, 우수한 열적 안정성과 개선된 휘발성을 나타냄으로써 낮은 온도에서 망간 및 망간 산화물 나노 입자, 그리고 망간 합금과 같이 망간을 포함하는 화합물을 생성할 수 있는 선구 물질로서 유용하게 사용할 수 있는 효과가 있다.As described above, the manganese aminoalkoxide compound of the present invention does not cause contamination of carbon or halogen by coordinating a dialkyl amino group to manganese, and exhibits excellent thermal stability and improved volatility, thereby reducing manganese and manganese oxide nanoparticles at low temperatures, In addition, there is an effect that can be usefully used as a precursor that can produce a compound containing manganese, such as manganese alloy.
본 발명은 하기의 실시예에 의하여 보다 더 잘 이해될 수 있으며, 하기의 실시 예는 본 발명의 예시 목적을 위한 것이며 첨부된 특허 청구범위에 의하여 한정되는 보호 범위를 제한하고자 하는 것은 아니다.The invention can be better understood by the following examples, which are intended for the purpose of illustration of the invention and are not intended to limit the scope of protection defined by the appended claims.
[실시예]EXAMPLE
모든 실험은 장갑 상자 또는 슐렝크 관(Schlenk line)을 이용하여 비활성 아르곤 또는 질소 분위기에서 수행되었다. 반응 생성물의 구조 및 특성은 푸리에 적외선 분광(FT-IR) 분석, 원소 분석법(elemental analysis, EA) 및 열 중량 분석법/시차 열 분석법(thermogravimetric analysis/differential thermal analysis, TGA/DTA)을 이용하여 분석하였다.All experiments were performed in an inert argon or nitrogen atmosphere using a glove box or Schlenk line. The structure and properties of the reaction product were analyzed using Fourier infrared spectroscopy (FT-IR), elemental analysis (EA) and thermogravimetric analysis / differential thermal analysis (TGA / DTA). .
[[ 실시예Example 1] (디메틸아미노-2- 1] (dimethylamino-2- 메틸methyl -2--2- 프로폭시Propoxy ) 망간() Manganese ( IIII ) [Mn() [Mn ( dmampdmamp )) 22 ]의 합성 Synthesis
100 mL 슐렝크 플라스크에 테트라 하이드로퓨란 (THF, 20 mL)을 넣고 Mn[N{Si(CH3)3}2]2 (1.87 g, 5 mmol)과 디메틸아미노-2-메틸-2-프로판올(dmampH, 1.17 g, 10 mmol)을 각각 첨가한 후 3 시간 동안 교반하였다. 혼합 용액을 여과하여 흰색 고체로 표제 화합물인 Mn(dmamp)2를 분리하였다.Tetra hydrofuran (THF, 20 mL) was added to a 100 mL Schlenk flask, followed by Mn [N {Si (CH 3 ) 3 } 2 ] 2 (1.87 g, 5 mmol) and dimethylamino-2-methyl-2-propanol ( dmampH, 1.17 g, 10 mmol) were added and stirred for 3 hours. The mixed solution was filtered to separate Mn (dmamp) 2 , the title compound, as a white solid.
수율 : 1.25 g(87 %)Yield: 1.25 g (87%)
원소 분석 C12H28N2O2Mn(dmamp)2H2O {계산치 (실측치)}: C, 49.08 (49.30); H, 10.75 (11.55); N, 9.54 (9.55).Elemental Analysis C 12 H 28 N 2 O 2 Mn (dmamp) 2 H 2 O {calculated (calculated)}: C, 49.08 (49.30); H, 10.75 (11.55); N, 9.54 (9.55).
FT-IR (cm-1, KBr pellet) : υ(M-O) 541 cm-1.FT-IR (cm −1 , KBr pellet): υ (MO) 541 cm −1 .
[[ 실시예Example 2] (디메틸아미노-2- 2] (dimethylamino-2- 메틸methyl -2--2- 부톡시Butoxy ) 망간() Manganese ( IIII ) [Mn() [Mn ( dmambdmamb )) 22 ]의 합성 Synthesis
100 mL 슐렝크 플라스크에 테트라 하이드로퓨란 (THF, 20 mL)을 넣고 Mn[N{Si(CH3)3}2]2 (1.87 g, 5 mmol)과 디메틸아미노-2-메틸-2-부탄올(dmambH, 1.31 g, 10 mmol)을 각각 첨가한 후 3 시간 동안 교반하였다. 혼합 용액을 여과하고 여액을 진공 건조하여 흰색 고체로 표제 화합물인 Mn(dmamb)2를 분리하였다.Add tetrahydrofuran (THF, 20 mL) to a 100 mL Schlenk flask and add Mn [N {Si (CH 3 ) 3 } 2 ] 2 (1.87 g, 5 mmol) and dimethylamino-2-methyl-2-butanol ( dmambH, 1.31 g, 10 mmol) were added respectively and stirred for 3 hours. The mixed solution was filtered and the filtrate was dried in vacuo to separate the title compound Mn (dmamb) 2 as a white solid.
수율 : 1.40g(89%)Yield: 1.40 g (89%)
원소 분석 C14H32N2O2MnH2O {계산치 (실측치)}: C, 50.44 (50.41); H, 10.28 (10.19); N, 8.40 (8.99).Elemental Analysis C 14 H 32 N 2 O 2 MnH 2 O {calculated (calculated)}: C, 50.44 (50.41); H, 10.28 (10.19); N, 8.40 (8.99).
FT-IR (cm-1, KBr pellet) : υ(M-O) 524, 592 cm-1. FT-IR (cm −1 , KBr pellet): υ (MO) 524, 592 cm −1 .
도 1은 실시예 1에서 제조한 Mn(dmamp)2 화합물의 푸리에 변환 적외선 분광 (FTIR) 분석 결과이고,1 is a result of Fourier transform infrared spectroscopy (FTIR) analysis of a Mn (dmamp) 2 compound prepared in Example 1,
도 2는 실시예 2에서 제조한 Mn(dmamb)2 화합물의 푸리에 변환 적외선 분광 (FTIR) 분석 결과이며,2 is a result of Fourier transform infrared spectroscopy (FTIR) analysis of the Mn (dmamb) 2 compound prepared in Example 2,
도 3은 실시예 1에서 제조한 Mn(dmamp)2 화합물의 열 중량 분석(TGA) 및 시차 열 분석(DTA) 결과를 나타내는 그래프이다.3 is a graph showing the results of thermogravimetric analysis (TGA) and differential thermal analysis (DTA) of the Mn (dmamp) 2 compound prepared in Example 1.
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