KR100884924B1 - Crucible rotation control device for single crystal grower - Google Patents

Crucible rotation control device for single crystal grower Download PDF

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KR100884924B1
KR100884924B1 KR1020070109878A KR20070109878A KR100884924B1 KR 100884924 B1 KR100884924 B1 KR 100884924B1 KR 1020070109878 A KR1020070109878 A KR 1020070109878A KR 20070109878 A KR20070109878 A KR 20070109878A KR 100884924 B1 KR100884924 B1 KR 100884924B1
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South Korea
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crucible
single crystal
control device
rotation control
shaft
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KR1020070109878A
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Korean (ko)
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최기형
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현빈테크 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/24—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using mechanical means, e.g. shaping guides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof

Abstract

A crucible rotation control device for growing a single crystal is provided to facilitate rearrangement and maintenance of the device by controlling the power transmission by controlling a rotor of an axis joint device. A quartz crucible(51) in a rotation axis is rotated by delivering the driving power of a driving motor to a decelerator(30), an axis joint device(40), a second driving transmitting unit, and the rotation axis(50) successively through a first driving transmitting unit. The driving power delivered to the quartz crucible is blocked by releasing the axis joint device when the driving motor is driven. The quartz crucible is rotated or stopped by gearing or releasing a rotor of the axis joint device and the tooth of a geared ring.

Description

단결정 성장장치용 도가니 회전 제어장치{Crucible rotation control device for single crystal grower}Crucible rotation control device for single crystal grower

본 발명은 단결정 성장장치용 도가니 회전 제어장치에 관한 것으로서, 단결정 실리콘 잉곳 제조중에 도가니 회전축의 재정렬이 필요한 경우 신속한 정비가 이루어질 수 있도록 함에 그 목적을 두고 발명된 것이다.The present invention relates to a crucible rotation control apparatus for a single crystal growth apparatus, and has been invented for the purpose of enabling rapid maintenance when the crucible rotation shaft is required to be realigned during the production of a single crystal silicon ingot.

일반적으로, 반도체 칩을 만들기 위해서는 먼저 추출된 실리콘을 얇은 판 모양의 웨이퍼 상태로 만들어야 하는데, 이 과정은 단결정 실리콘 잉곳(ingot)을 만드는 것으로 시작된다.In general, to make a semiconductor chip, the extracted silicon must first be made into a thin wafer, which begins with the formation of a single crystal silicon ingot.

이러한 단결정 실리콘 잉곳의 제조는 약 75% 이상이 초크랄스키 방법(czochralski method)으로 생산되고 있는데, 초크랄스키 방법은 다결정 실리콘 덩어리들을 석영도가니(quartz crucible)에 담궈서 용융한 후, 원하는 결정 방향과 동일한 결정 방향을 가진 단결정 시드(seed;종자)를 실리콘 용융액 표면 가운데 부분에 접촉시키고, 시드와 석영도가니를 서로 반대 방향으로 회전시키면서 적절한 속도로 시드를 인상시켜 단결정을 성장시키는 방법이다. 이때, 석영도가니는 도가니 회전 제어장치(크루시블 메커니즘 ; crucible mechanism)에 의해 회전되어진다.More than about 75% of these monocrystalline silicon ingots are produced by the Czochralski method, which melts polycrystalline silicon lumps in a quartz crucible and melts them in the desired crystal orientation. A single crystal seed having the same crystal direction is brought into contact with the center of the surface of the silicon melt, and the single crystal is grown by raising the seed at an appropriate speed while rotating the seed and the quartz crucible in opposite directions. At this time, the quartz crucible is rotated by a crucible rotation control device (crucible mechanism).

종래의 도가니 회전 제어장치는 구동모터, 감속기, 동력전달수단, 회전축 등으로 이루어져 있으며, 구동모터의 구동력을 감속기를 통해 회전축에 전달하여 회전축에 안착된 석영도가니를 회전시켜줄 수 있도록 이루어져 있다.Conventional crucible rotation control device is composed of a drive motor, a reducer, a power transmission means, a rotating shaft, etc., and is configured to transmit the driving force of the driving motor to the rotating shaft through the reducer to rotate the quartz crucible seated on the rotating shaft.

한편, 단결정 성장 공정은 경우에 따라 일주일에서 한 달까지도 소요되는 장기간의 공정이기 때문에, 장기간동안 석영도가니를 회전시켜주다 보면, 석영도가니를 회전시켜주는 도가니 회전 제어장치의 회전축이 중심에서 벗어나는 경우가 종종 발생되고 있다. 이러한 경우에는 석영도가니의 회전·구동을 정지시키고 재정렬(정비)을 한 후에 다시 잉곳을 제조하여야 한다.On the other hand, since the single crystal growth process is a long-term process that takes from one week to one month in some cases, when the quartz crucible is rotated for a long time, the axis of rotation of the crucible rotation controller which rotates the quartz crucible is out of the center. It is often occurring. In such a case, the ingot should be manufactured again after stopping and rearranging the quartz crucible.

그러나, 위와 같은 종래의 도가니 회전 제어장치는 잉곳 제조 중에 정비 또는 장치의 재정렬이 필요한 경우가 발생하게 되면, 도가니 회전 제어장치 전체의 가동을 중단하고 정비 또는 재정렬을 한 후 재가동을 할 수밖에 없었으므로, 정비에 소요되는 시간이 필요 이상으로 과다하게 소요되어 잉곳의 불량률이 높아지게 되는 문제가 발생하고 있으며, 이는 많은 비용이 소요되는 단결정 성장공정에서는 더욱더 심각한 문제점을 안고 있는 것이다.However, in the case of the conventional crucible rotation control device as described above, if maintenance or realignment of the device is required during ingot manufacture, the crucible rotation control device has no choice but to restart after the maintenance or rearrangement of the crucible rotation control device. There is a problem that the time required for maintenance is excessively necessary to increase the defect rate of the ingot, which is a more serious problem in the costly single crystal growth process.

본 발명은 전술한 바와 같이 종래 도가니 회전 제어장치의 정비 또는 재정렬시에 발생되었던 제반 문제점을 해결하고자 창출된 것으로서, 도가니 회전 제어장치가 가동되고 있는 상태에서 구동모터의 회전·구동력을 일시적으로 차단하였다가 정비(재정렬)를 완료한 후 곧바로 석영도가니에 다시 전달될 수 있도록 함으로써, 단결정 성장공정 중에 도가니 회전 제어장치의 정비 또는 재정렬이 신속하게 이루어질 수 있도록 함에 기술적 과제의 주안점을 두고 완성한 단결정 성장장치의 도가니 회전 제어장치를 제공하고자 한다.As described above, the present invention was created to solve various problems incurred in the maintenance or rearrangement of the conventional crucible rotation control device, and temporarily interrupts the rotation and driving force of the driving motor while the crucible rotation control device is operating. After the maintenance (rearrangement) is completed, it can be delivered to the quartz crucible immediately so that the maintenance or realignment of the crucible rotation control device can be performed quickly during the single crystal growth process. To provide a crucible rotation control device.

상기한 기술적 과제를 실현하기 위하여 본 발명은 구동모터, 구동모터와 연계되는 감속기, 감속기를 거친 구동모터의 구동력을 차단 또는 도가니 회전축에 전달시켜주기 위한 축이음장치 등으로 구성되어 진다.In order to realize the above technical problem, the present invention is composed of a drive motor, a reducer associated with the drive motor, a shaft joint device for transmitting the driving force of the drive motor having passed through the reducer to the crucible rotating shaft or the like.

본 발명은 축이음장치의 로터를 제어하여 동력의 전달을 단속할 수 있으므로 도가니 회전 제어장치가 구동중인 상태에서 석영도가니를 정위치에 신속하게 정렬(정비)할 수 있으며, 고비용으로 제조되어지는 잉곳의 불량률도 현저히 저하시킬 수 있는 등 그 기대되는 효과가 실로 유익한 발명인 것이다.The present invention can control the rotor of the shaft joint device to interrupt the transmission of power, so that the crucible can be quickly aligned (maintenance) in the correct position while the crucible rotation control device is being driven, and the ingot is manufactured at high cost. The defective rate can also be significantly reduced, and the expected effect is indeed a beneficial invention.

도 1 내지 도 2에 본 발명에서 제시하는 단결정 성장장치용 도가니 회전 제어장치(10)의 바람직한 실시예가 도시되는데, 도시된 바와 같이 구동모터(20)와 제 1 구동전달수단(C1)으로 연계되어 구동하는 감속기(30)의 하부에 축이음장치(40)를 설치하여 구성되어짐을 알 수 있다.1 to 2 illustrate a preferred embodiment of the crucible rotation control apparatus 10 for a single crystal growth apparatus according to the present invention, which is connected to the driving motor 20 and the first driving transmission means C1 as shown. It can be seen that the shaft coupling device 40 is installed in the lower portion of the reduction gear 30 to be driven.

상기 축이음장치(40)는 로터(41; roter)의 일측면에 형성된 치(齒)와 맞물림링(42)에 형성된 치를 맞물리게 하거나 해제할 할 수 있도록 구성되어 있어, 석영도가니가 안착된 회전축(50)으로 전달되는 구동모터(20)의 구동력을 단속할 수 있도록 구성된 것인데, 소형으로 높은 토르크를 원활히 전달할 수 있고 저속회전에 적합하며 슬립현상이 없는 치맞물림 방식의 축이음장치(40)가 바람직하나, 경우에 따라서 마찰 축이음장치, 유체 축이음장치, 원심 축이음장치 등과 같은 축이음장치로의 치환도 가능하다.The shaft coupling device 40 is configured to engage or release the teeth formed on one side of the rotor 41 and the teeth formed on the engagement ring 42, so that the quartz shaft is seated on the rotating shaft ( It is configured to intermittently drive the driving force of the driving motor 20 to be transmitted to 50, it is preferable to fit the shaft joint device 40 of the engagement type that can smoothly transmit a high torque in a small size and is suitable for low-speed rotation and no slip phenomenon. However, in some cases, replacement with a shaft coupling device such as a friction shaft coupling device, a fluid shaft coupling device, a centrifugal shaft coupling device, or the like is possible.

또한, 상기 제 1, 2 구동전달수단(C1,C2)은 주동축의 회전수를 종동축에 용이하게 전달할 수 있는 스프라켓 및 체인으로 구성함이 바람직하나, 경우에 따라 벨트, 타임벨트 및 벨트풀리 등으로 구성하는 것도 가능하다.In addition, the first and second drive transmission means (C1, C2) is preferably composed of a sprocket and a chain that can easily transmit the rotational speed of the main shaft to the driven shaft, belt, time belt and belt pulley in some cases It is also possible to configure such as.

또한, 상기 구동모터(20)는 석영도가니(51) 회전속도의 가변을 용이하게 할 수 있는 서보모터(servomotor)로 구성함이 바람직하다.In addition, the drive motor 20 is preferably composed of a servo motor (servomotor) that can easily change the rotation speed of the quartz crucible (51).

한편, 정비, 교체 등의 작업을 행할 시에 충분한 공간이 마련된 위치로의 이동이 간편하게 이루어질 수 있도록, 구동모터(20), 감속기(30) 및 축이음장치(40) 를 베이스 플레이트(11)에 고정결합하고, 상기 베이스 플레이트(11)는 단결정 성장장치(1)의 일측에 회전가능하게 힌지결합하여 구성한다.(도 3 참조) Meanwhile, the drive motor 20, the reducer 30, and the shaft joint device 40 are attached to the base plate 11 so that movement to a position where sufficient space is provided when performing maintenance, replacement, or the like can be easily performed. The base plate 11 is fixedly coupled and rotatably hinged to one side of the single crystal growth apparatus 1 (see FIG. 3).

이상으로 구성된 본 발명은 구동모터(20)의 구동력을 제 1 구동전달수단(C1)을 통해 감속기(30), 축이음장치(40), 제 2 구동전달수단(C2), 회전축(50)으로 순차적으로 전달시켜 회전축(50)에 안착된 석영도가니(51)를 회전시키게 되는 것이며, 축이음장치(40)의 맞물림을 해제시키게되면 구동모터(20)가 구동하고 있는 상태에서 석영도가니(51)로 동력이 전달되는 것을 차단시킬 수 있게 되는 것이다. 즉, 축이음장치(40)의 로터(41)와 맞물림링(42)에 형성된 치를 맞물림시키거나 해제시킴으로 인해 간단하고 신속하게 석영도가니(51)를 회전시키거나 정지시킬 수 있게 되는 것이다.The present invention configured as described above the drive force of the drive motor 20 through the first drive transmission means (C1) to the reducer 30, the shaft coupling device 40, the second drive transmission means (C2), the rotating shaft 50 The quartz crucible 51 is rotated to be sequentially transmitted to rotate the quartz crucible 51 seated on the rotation shaft 50. When the shaft coupling device 40 is released, the quartz crucible 51 is driven while the driving motor 20 is driven. It is possible to block the transmission of power to the furnace. That is, by engaging or releasing the teeth formed in the rotor 41 and the engagement ring 42 of the shaft coupling device 40, it is possible to simply or quickly rotate or stop the quartz crucible 51.

도 1은 본 발명에서 제시하는 도가니 회전 제어장치의 바람직한 실시예를 도시한 정면도.1 is a front view showing a preferred embodiment of the crucible rotation control device proposed in the present invention.

도 2는 본 발명에 따른 축이음장치를 나타낸 부분 단면도.Figure 2 is a partial sectional view showing a shaft joint according to the present invention.

도 3은 본 발명과 도가니 회전축의 결합관계를 나타낸 참고도.3 is a reference diagram showing a coupling relationship between the present invention and the crucible rotation shaft.

도 4는 본 발명이 단결정 성장장치에 적용된 상태를 도시한 사용 상태도.4 is a use state diagram showing a state in which the present invention is applied to a single crystal growth apparatus.

◀ 도면의 주요부분에 사용된 부호에 대한 설명 ▶◀ Explanation of symbols used in the main part of the drawing ▶

1 : 단결정 성장장치 10 : 도가니 회전 제어장치1: single crystal growth device 10: crucible rotation control device

11 : 베이스 플레이트 20 : 구동모터11: base plate 20: drive motor

30 : 감속기 40 : 축이음장치30: reducer 40: shaft joint

50 : 도가니 회전축 51 : 석영도가니50: crucible rotating shaft 51: quartz crucible

C1 : 제 1 구동전달수단 C2 : 제 2 구동전달수단C1: first drive transmission means C2: second drive transmission means

Claims (1)

구동모터(20)와 제 1 구동전달수단(C1)으로 연계되어 구동하는 감속기(30);상기 감속기(30)와 회전축(50)을 구동전달수단으로 연결하여, 회전축에 안착된 석영도가니를 회전시켜줄 수 있도록 구성된 단결정 성장장치용 도가니 회전 제어장치에 있어서,Reducer 30 is driven in conjunction with the drive motor 20 and the first drive transmission means (C1); Connecting the reducer 30 and the rotation shaft 50 as a drive transmission means, to rotate the quartz crucible seated on the rotation shaft In the crucible rotation control device for a single crystal growth apparatus configured to allow 상기 감속기(30)의 하부에는 석영도가니가 안착된 회전축(50)으로 전달되는 구동모터(20)의 구동력을 필요에 따라서 연결 또 차단할 수 있도록 하는 축이음장치(40)를 마련하되, 그 축이음장치(40)는 소형으로 높은 토르크를 원활히 전달할 수 있고 저속회전에 적합하며 슬립현상이 없는 치맞물림식 축이음장치(40)인 것과;In the lower part of the reducer 30, a shaft coupling device 40 is provided to connect and block the driving force of the driving motor 20 transmitted to the rotating shaft 50 on which the quartz crucible is seated. The device 40 is an interlocking shaft joint device 40 which is small in size, can smoothly transmit high torque, is suitable for low speed rotation, and has no slip phenomenon; 상기 구동모터(20), 감속기(30) 및 축이음장치(40)는 힌지 결합되어 단결정 성장장치(1)의 일측에 회전가능토록 하는 하나의 베이스 플레이트(11)에 고정결합되는 것; 을 특징으로 하는 단결정 성장장치용 도가니 회전 제어장치.The drive motor 20, the reducer 30 and the shaft coupling device 40 is hingedly coupled to one base plate 11 to be rotatable on one side of the single crystal growth apparatus 1; Crucible rotation control device for a single crystal growth apparatus characterized in that.
KR1020070109878A 2007-10-30 2007-10-30 Crucible rotation control device for single crystal grower KR100884924B1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR880008412A (en) * 1986-12-26 1988-08-31 히요시 준이찌 Silicon Single Crystal Pull-up Device
JPH0753296A (en) * 1993-08-16 1995-02-28 Komatsu Ltd Device for controlling posture of pulling-up shaft of single crystal pulling-up machine
KR19980044326A (en) * 1996-12-06 1998-09-05 김광호 Shaft joint device of semiconductor manufacturing equipment
KR20060073855A (en) * 2004-12-24 2006-06-29 주식회사 실트론 A silicon single crystal ingot grower used czochralski method and controlling method of the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR880008412A (en) * 1986-12-26 1988-08-31 히요시 준이찌 Silicon Single Crystal Pull-up Device
JPH0753296A (en) * 1993-08-16 1995-02-28 Komatsu Ltd Device for controlling posture of pulling-up shaft of single crystal pulling-up machine
KR19980044326A (en) * 1996-12-06 1998-09-05 김광호 Shaft joint device of semiconductor manufacturing equipment
KR20060073855A (en) * 2004-12-24 2006-06-29 주식회사 실트론 A silicon single crystal ingot grower used czochralski method and controlling method of the same

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