KR100861368B1 - Immersion lithography method to suppress water residue on back side of wafer - Google Patents
Immersion lithography method to suppress water residue on back side of wafer Download PDFInfo
- Publication number
- KR100861368B1 KR100861368B1 KR1020070049348A KR20070049348A KR100861368B1 KR 100861368 B1 KR100861368 B1 KR 100861368B1 KR 1020070049348 A KR1020070049348 A KR 1020070049348A KR 20070049348 A KR20070049348 A KR 20070049348A KR 100861368 B1 KR100861368 B1 KR 100861368B1
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- KR
- South Korea
- Prior art keywords
- wafer
- immersion lithography
- surface layer
- back side
- layer
- Prior art date
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
1 to 3 are diagrams schematically illustrating a process in which moisture remains on a back surface of a wafer.
4 is a graph showing the wafer temperature drop due to the residual moisture on the back surface of the wafer.
FIG. 5 is a graph presented to illustrate overlay failure in immersion lithography due to residual moisture on the wafer backside.
Figure 6 is a graph measuring the degree of scaling (scaling) according to the contact angle of the hydrophobic surface layer according to an embodiment of the present invention.
7 through 9 are schematic diagrams for explaining an immersion lithography method according to an embodiment of the present invention.
BACKGROUND OF THE
As circuit patterns of semiconductor devices are miniaturized, immersion lithography techniques have been proposed to transfer finer patterns of line width (CD) onto wafers. The immersion lithography technology introduces a high refractive index liquid immersion liquid that is larger than the refractive index of the vacuum state between the exposure apparatus and the wafer, and induces a shorter wavelength of light passing through the high refractive index medium, thereby enabling a finer pattern of exposure. I'm letting you. In this case, the liquid medium uses water having a refractive index of 1.33.
One of the problems to be solved in such immersion lithography may be to illustrate an overlay fail. Since the temperature sensitivity to water, which is the infiltration medium in the immersion exposure equipment, is about 100 times higher than in the vacuum state, a substantial wavelength change of the exposure light according to the change in the refractive index of the infiltration medium may be greatly generated. Accordingly, overlay failure during exposure due to temperature fluctuation of the infiltration medium is considerably greater than that of conventional dry exposure tools.
1 to 3 are diagrams schematically illustrating a process in which moisture remains on a back surface of a wafer.
Referring to FIG. 1, although the current immersion lithography equipment is very precisely controlling the temperature of the feed to approximately ± 5 mK, this overlay failure is not only at the wafer back side, as shown in FIG. 1. This may be due to the residual water (water residue or water droplet) 13 or thus the
4 is a graph showing the wafer temperature drop due to the residual moisture on the back surface of the wafer. FIG. 5 is a graph presented to illustrate overlay failure in immersion lithography due to residual moisture on the wafer backside.
Referring to FIG. 4, it is measured that the wafer temperature in the case where residual moisture is present 43 decreases relative to the measurement wafer temperature in the case where there is no
SUMMARY OF THE INVENTION An object of the present invention is to provide an immersion lithography method capable of suppressing moisture from remaining on a wafer chuck or a wafer back surface of an immersion lithography apparatus.
One aspect of the present invention for the above technical problem, forming a main resist layer to be exposed on the front surface of the wafer, forming a hydrophobic surface layer to suppress moisture retention on the back surface of the wafer, and An immersion lithography method is disclosed that includes mounting on a wafer chuck of an immersion lithography apparatus to perform exposure.
The hydrophobic surface layer may be formed by coating a resist material having hydrophobicity against ultrapure water on the back surface of the wafer.
Coating of the hydrophobic resist material may be carried out continuously in the step of forming the main resist layer.
The hydrophobic surface layer may be formed to extend onto the main resist layer.
According to the present invention, it is possible to suppress the remaining of moisture on the wafer chuck or the back surface of the wafer of the immersion lithography apparatus, thereby providing an immersion lithography method which can suppress the overlay defect by suppressing the temperature change of the unwanted infiltration medium. .
Embodiments of the present invention propose a method of introducing a surface layer of a hydrophobic resist to suppress the occurrence of an overlay failure during exposure of immersion lithography due to moisture remaining on the back surface of a wafer. After forming a main resist layer on the wafer, and forming a top coating on the resist layer by inhibiting the reaction with the infiltration medium to suppress and protect the infiltration medium, a hydrophobic surface layer is formed on the back side of the wafer. do. In this case, the hydrophobic surface layer may be formed to extend on the front surface of the wafer. Such hydrophobic surface layer can suppress the moisture remaining on the back surface of the wafer. As a result, it is possible to suppress the moisture remaining on the wafer chuck of the immersion lithography apparatus.
Figure 6 is a graph measuring the degree of scaling (scaling) according to the contact angle of the hydrophobic surface layer according to an embodiment of the present invention.
Referring to FIG. 6, after the hydrophobic resist is coated on the front and back surfaces of the wafer, the contact angle of water as an infiltration medium with respect to the surface layer of the hydrophobic ledge is measured as a result of exposure and measurement of the degree of overlay failure such as wafer scaling. And the degree of scaling is measured to vary as shown in FIG. 6. After the coating of the surface layer, the exposure was performed after one day and two days, and the pattern shift in the X-axis direction by scaling and the pattern shift in the Y-axis direction were set. As a result of measuring the change degree with respect to the pattern size, the degree of scaling change obtained in the
In the embodiment of the present invention using the results of FIG. 6, after forming the main resist layer to be exposed in actual immersion lithography, the surface layer of hydrophobic resist is introduced on the backside or the backside and the frontside of the wafer to overlay by residual moisture. A method of suppressing defects is presented. The hydrophobic surface layer introduced as described above suppresses the presence of ultra pure water (UPW: Ultra Purified Water) introduced into the rinse liquid during the wafer pre-rinse process performed before exposure. Thereby, when the wafer is mounted on the wafer chuck of the immersion lithography apparatus, it is possible to suppress the transfer of residual moisture onto the wafer chuck. Therefore, moisture remains on the wafer chuck and the wafer temperature is changed during exposure of the wafer, whereby the temperature of the infiltrating medium is changed to suppress occurrence of overlay failure.
7 through 9 are schematic diagrams for explaining an immersion lithography method according to an embodiment of the present invention.
Referring to FIG. 7, a
Referring to FIG. 9, a
At this time, in the conventional case, the ultrapure water used as the rinse liquid may remain on the rear surface of the
After performing the exposure, the
According to the present invention described above, it is possible to prevent the overlay failure due to moisture that may remain on the wafer chuck or the wafer back during the immersion lithography process.
As mentioned above, although this invention was demonstrated in detail through the specific Example, this invention is not limited to this, It is clear that the deformation | transformation and improvement are possible by the person of ordinary skill in the art within the technical idea of this invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020070049348A KR100861368B1 (en) | 2007-05-21 | 2007-05-21 | Immersion lithography method to suppress water residue on back side of wafer |
Applications Claiming Priority (1)
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KR1020070049348A KR100861368B1 (en) | 2007-05-21 | 2007-05-21 | Immersion lithography method to suppress water residue on back side of wafer |
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KR100861368B1 true KR100861368B1 (en) | 2008-10-01 |
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KR1020070049348A KR100861368B1 (en) | 2007-05-21 | 2007-05-21 | Immersion lithography method to suppress water residue on back side of wafer |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107644808A (en) * | 2016-07-21 | 2018-01-30 | 东京毅力科创株式会社 | The back side friction of substrate reduces |
CN111433886A (en) * | 2017-11-29 | 2020-07-17 | 东京毅力科创株式会社 | Backside friction reduction of substrates |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002341548A (en) * | 2001-05-17 | 2002-11-27 | Sony Corp | Method of processing wafer |
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2007
- 2007-05-21 KR KR1020070049348A patent/KR100861368B1/en not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002341548A (en) * | 2001-05-17 | 2002-11-27 | Sony Corp | Method of processing wafer |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107644808A (en) * | 2016-07-21 | 2018-01-30 | 东京毅力科创株式会社 | The back side friction of substrate reduces |
CN107644808B (en) * | 2016-07-21 | 2023-08-22 | 东京毅力科创株式会社 | Substrate, method of processing substrate, and processing chamber system |
CN111433886A (en) * | 2017-11-29 | 2020-07-17 | 东京毅力科创株式会社 | Backside friction reduction of substrates |
CN111433886B (en) * | 2017-11-29 | 2024-07-30 | 东京毅力科创株式会社 | Backside friction reduction of a substrate |
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