KR100826645B1 - Circuit and method for generating control signal of column path of semiconductor device - Google Patents

Abstract

The present invention includes a strobe signal adjusting unit for receiving a first strobe signal having a first pulse width, and adjusting a pulse width of the first strobe signal to output a second strobe signal having a second pulse width; A strobe signal delay unit receiving the second strobe signal and generating a plurality of delayed strobe signals by respectively delaying the second strobe signal to different delay periods; A column path control signal generation circuit of a semiconductor device including a control signal generator configured to receive at least one delayed strobe signal among the plurality of delayed strobe signals and generate a first column path control signal for controlling a column path of the semiconductor device; to provide.

Column Path Control Signal Generation Circuit, Strobe Signal, PVT

Description

Circuit and method for generating control signal of column path of semiconductor device

1 illustrates a configuration of a column path control signal generation circuit according to the prior art.

2A to 2D are circuit diagrams of a column path control signal generation circuit according to an embodiment of the present invention.

3 is a timing diagram of delayed strobe signals generated by the strobe signal delay unit according to the embodiment of the present invention.

4 is a timing diagram of control signals generated by a control signal generator according to an exemplary embodiment of the present invention.

5 is a timing diagram illustrating how the pulse widths of the control signals are adjusted by the strobe signal controller according to an exemplary embodiment of the present invention.

6 is a circuit diagram of a column path control circuit controlled by a column path control signal generated according to an embodiment of the present invention.

7A and 7B are circuit diagrams of a write driver controlled by a column path control signal generated according to an embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

10: strobe signal controller 11: strobe signal delay unit

12 and 14: first and second delay elements 16 and 18: first and second control signal generators

160, 180: logic unit 20: core control unit

30: local input and output line control unit 40: column path control unit

41: local input and output line amplifier 42: local input and output line latch unit

50: first pull up / pull down signal generator 60: second pull up / pull down signal generator

70, 72: first and second drive unit 80: precharge unit

The present invention relates to a column path control signal generation circuit and a column path control signal generation method of a semiconductor device, and more particularly, to generating a column path control signal, to a change in PVT (Process, Voltage, Temperature) characteristics of a CMOS transistor. The present invention relates to a column path control signal generation circuit and a column path control signal generation method of a semiconductor device subjected to the same influence.

In general, semiconductor devices, particularly DRAMs, require various column path control signals to perform read or write operations. For example, the column path control signal required for performing a read or write operation of the DRAM includes a local input / output line precharge signal for controlling an operation of precharging a signal of a local input / output line (lio). liopcg, liopcgback, a local input / output line reset signal lio_rst for equalizing the potential of the local input / output line lio in response to the local input / output line precharge signals liopcg, liopcgback, and a sense amplifier according to a read command. The output enable signal yi for transmitting the signal of the bit line amplified by the local input / output line lio and the amplification control signal iosa1 for controlling the amplification of the signal of the local input / output line lio during a read operation. And a latch control signal iosa2 for controlling an operation of latching a signal of the previously amplified local input / output line lio during a read operation, and a global input / output line during a write operation. There is a pull-up / pull-down control signal (bwen) that controls the pull-up / pull-down behavior of the ground input output line. Such control signals are signals generated based on the same strobe signal.

1 illustrates a configuration of a column path control signal generation circuit according to the prior art.

As illustrated, a plurality of column path control signals liopcg, lio_rst, lio_pcgback, bwen, yi, iosa1, and iosa2 required for read or write operations in the DRAM are generated by processing strobe signals in parallel. That is, the first to fifth delay units 1-5 and the inverters IV3-IV12 provided separately receive a strobe signal and independently delay a predetermined section to control a plurality of column path control signals ( liopcg, lio_rst, lio_pcgback, bwen, yi, iosa1, iosa2).

However, the CMOS transistors included in the first to fifth delay units 1-5 and the inverters IV3-IV12 have different PVT (Process, Voltage, Temperature) characteristics. Accordingly, timing between the column path control signals liopcg, lio_rst, lio_pcgback, bwen, yi, iosa1, and iosa2 generated in parallel through the first to fifth delay units 1-5 and the inverters IV3-IV12. Independently affected by changes in the PVT (Process, Voltage, Temperature) characteristics of the CMOS transistor are shifted from each other, resulting in an error in the read or write operation.

Therefore, the technical problem to be achieved by the present invention is to delay the strobe signal through the same delay unit to generate the column path control signals necessary for the read / write operation of the semiconductor device, so that the generated column path control signals are PVT (Process) of the CMOS transistor. To provide a method for generating a column path control signal and a method for generating a column path control signal such that the same effect is caused by a characteristic change.

In order to achieve the above technical problem, the present invention receives a strobe signal having a first pulse width, the strobe to output a second strobe signal having a second pulse width by adjusting the pulse width of the first strobe signal A signal controller; A strobe signal delay unit receiving the second strobe signal and generating a plurality of delayed strobe signals by respectively delaying the second strobe signal to different delay periods; A column path control signal generation circuit of a semiconductor device including a control signal generator configured to receive at least one delayed strobe signal among the plurality of delayed strobe signals and generate a first column path control signal for controlling a column path of the semiconductor device; to provide.

In the present invention, it is preferable that the strobe signal controller comprises a skew logic circuit configured to generate the second strobe signal by quickly adjusting the rising time or the falling time of the first strobe signal.

The strobe signal delay unit may include: a first delay unit generating a first delayed strobe signal by delaying the second strobe signal by a first delay period; And a second delay unit configured to delay the first delay strobe signal by a second delay period to generate a second delay strobe signal.

In the present invention, the control signal generation unit for receiving the first and second delay strobe signal logic unit for performing a logic operation; And a buffer configured to receive and buffer the output signal of the logic unit to generate the first column path control signal.

In the present invention, it is preferable that the logic unit performs an AND operation.

In the present invention, the buffer is preferably an inverter.

In the present invention, it is preferable to further include a delay element for delaying the output signal of the strobe signal delay unit by a predetermined section to generate a second column path control signal for controlling a signal of a local input / output line during a read operation.

A first delay element generating a second column path control signal for controlling an amplification of a signal of a local input / output line during a read operation by delaying an output signal of the strobe signal delay unit by a predetermined period; It is preferable to further include a second delay element for generating a third column path control signal for controlling the operation of latching the signal of the amplified local input and output lines during a read operation by delaying the second column path control signal by a predetermined period. Do.

In addition, the present invention comprises the steps of generating a second strobe signal having a second pulse width by adjusting the pulse width of the first strobe signal having a first pulse width; Receiving the second strobe signal and generating a plurality of delayed strobe signals by delaying the second strobe signals with different delay periods; Selecting at least one delayed strobe signal of the plurality of delayed strobe signals; And receiving the selected at least one delayed strobe signal to generate a first column path control signal for controlling the column path of the semiconductor device.

The method may further include generating a second column path control signal for controlling a signal of a local input / output line during a read operation by delaying the selected delay strobe signal by a predetermined period.

Generating a second column path control signal for controlling an operation of amplifying a signal of a local input / output line during a read operation by delaying the selected delay strobe signal by a predetermined period; The method may further include generating a third column path control signal for controlling the latching of the signal of the amplified local input / output line during a read operation by delaying the second column path control signal by a predetermined period.

In addition, the present invention includes a strobe signal adjusting unit for receiving a first strobe signal having a first pulse width, adjusting the pulse width of the first strobe signal to output a second strobe signal having a second pulse width; A first delay unit receiving the second strobe signal and delaying the second strobe signal by a first delay period to generate a first delay strobe signal, and delaying the first delay strobe signal by a second delay period A strobe signal delay unit configured to include a second delay unit generating a second delay strobe signal; A column path control signal generation circuit of a semiconductor device including a control signal generation unit configured to receive the first and second delayed strobe signals and perform a logic operation to generate a first column path control signal for controlling a column path of the semiconductor device To provide.

Hereinafter, the present invention will be described in more detail with reference to Examples. These examples are only for illustrating the present invention, and the scope of protection of the present invention is not limited by these examples.

2A to 2D are circuit diagrams of a column path control signal generation circuit according to an embodiment of the present invention.

As shown, the column path control signal generation circuit according to an embodiment of the present invention is the strobe signal controller 10, the strobe signal delay unit 11, the first and second delay elements (12, 14), and And first and second control signal generators 16 and 18.

2A and 2B, the strobe signal controller 10 includes four CMOS transistors 100, 102, 104, and 106 composed of four PMOS transistors P1-P4 and four NMOS transistors N1-N4. Skewed Logic (10) circuit comprising a), receives a first strobe signal (strobe) having a first pulse width, by adjusting the pulse width of the input strobe signal (strobe) A second strobe signal mstrobe having a second pulse width is output. Here, in order to rapidly adjust the rising time of the first strobe signal strobe having the first pulse width, the NMOS to generate the second strobe signal mstrobe having the second pulse width smaller than the first pulse width, the NMOS. The lengths of the transistors N1 and N3 are larger than the lengths of the PMOS transistors P1 and P3, respectively, and the lengths of the PMOS transistors P2 and P4 are the lengths of the NMOS transistors N2 and N4, respectively. length). In order to generate a second strobe signal (mstrobe) having a second pulse width smaller than the first pulse width by quickly adjusting a falling time of the first strobe signal (strobe) having a first pulse width, Lengths of the transistors P1 and P3 are larger than lengths of the NMOS transistors N1 and N3, respectively, and lengths of the NMOS transistors N2 and N4 are larger than the lengths of the PMOS transistors P2 and P4, respectively. Set it to large.

Referring to FIG. 2A, the strobe signal delay unit 11 is composed of an inverter chain having a plurality of inverters IV20-IV27, and delayed strobe signals T1b-T4b and T2- output from the inverters IV20-IV27. T5) is a signal generated by delaying the second strobe signal mstrobe with different delay periods.

Referring to FIG. 2C, the first control signal generator 16 receives the delayed strobe signals T1b and T4b and performs a logical product operation on the logic unit 160 including a NAND gate ND1 and an inverter IV30. And an inverter IV31 that inverts and buffers an output signal of the logic unit 160 to generate first and second local input / output line precharge signals liopcg and lio_pcgback, and a local input / output line reset signal lio_rst. do. Also, referring to FIG. 2D, the second control signal generator 18 may include a logic unit including a NAND gate ND2 and an inverter IV32 that receive the delayed strobe signals T2b and T3b and perform an AND operation. And an inverter IV33 which inverts and buffers an output signal of the logic unit 180 to generate a pull-up / pull-down control signal bwen and an output enable signal yi.

3 shows a timing diagram of the delayed strobe signals T1b to T4b generated by the strobe signal delay unit 11 and the control signal generators 16 and 18. The timing diagrams of the generated control signals will be described with reference to FIG. 4 and FIG. 5 showing the pulse width of the control signals adjusted by the strobe signal controller 10 as follows.

First, the strobe signal controller 10 receives the first strobe signal strobe having the first pulse width, and adjusts the pulse width of the inputted strobe signal strobe rather than the first strobe signal strobe. A second strobe signal mstrobe having a small pulse width is output.

Next, the strobe signal delay unit 11 receives the second strobe signal mstrobe and generates delayed strobe signals T2-T5 and T1b-T4b having different delay periods. The delayed strobe signals T2-T5 and T1b-T4b generated as described above are signals obtained by delaying the strobe signal strobe for a predetermined period through the inverters IV20-IV27. The two strobe signals mstrobe are signals formed by being delayed and inverted for a predetermined period. Referring to FIG. 3, the timing between the delayed strobe signals T1b-T4b and the strobe signal strobe, which is the mother signal, can be checked.

Subsequently, the first control signal generator 16 receives the delayed strobe signals T1b and T4b respectively in different delay periods, and receives the first and second local input / output line precharge signals liopcg and lio_pcgback, and the local input / output line. The reset signal lio_rst is generated. In this case, the generated first and second local I / O line precharge signals liopcg and lio_pcgback and the local I / O line reset signal lio_rst are signals that become high by low level delay strobe signals T1b and T4b. The pulse width is determined by the delay strobe signals T1b and T4b. In addition, the second control signal generator 18 receives the delay strobe signals T2b and T3b and generates a pull-up / pull-down control signal bwen and an output enable signal yi. Referring to FIG. 4, a timing diagram between generated control signals liopcg, lio_pcgback, lio_rst, bwen, and yi may be checked.

However, as shown in FIG. 5, when any of the delay strobe signals 1db and 2db becomes a low level, the control signal Pulse is enabled at a high level, so that the pulse width (solid line) of the control signal Pulse is shown. Is increased by a (nsec) than the pulse width (1 (nsec)) of the first strobe signal (strobe). In particular, the pulse width of the control signal Pulse increases as the delay interval between the delay strobe signals 1db and 2db increases, for example, a pull-up / pull-down control signal bwen and an output enable signal yi. As shown in FIG. 3, since the control signals bwen and yi are generated through the delay strobe signals T1b and T4b having the largest difference in delay period, the pulse widths of the control signals bwen and yi are generated. The increase amount a (nsec) is also the largest. As such, when the pulse width of the control signals bwen and yi is increased, an active or precharge operation period may be large or short, which causes a malfunction. Accordingly, the present invention generates the strobe signal (1db, 2db) and the control signal (Pulse) of which the pulse width is reduced by using the second strobe signal (mstrobe) having a strobe signal control unit 10 to reduce the pulse width As a result, the pulse width increase effect of the control signal Pulse caused by the delay period between the delay strobe signals 1db and 2db is canceled to keep the pulse width (dotted line) of the control signal Pulse constant at 1 (nsec). I'm making it.

Meanwhile, the first delay element 12 receives the delayed strobe signal T5 output from the inverter IV27 of the strobe signal delay unit 11 and delays the predetermined period to amplify the signal of the local input / output line during the read operation. An amplification control signal iosa1 for controlling the operation is generated. In addition, the second delay element 14 delays the amplification control signal iosa1 by a predetermined period to generate a latch control signal iosa2 for controlling an operation of latching the amplified local input / output line signal during a read operation. .

The column path control signal generation circuit according to the embodiment of the present invention described above delays the second strobe signal mstrobe to different delay sections by one strobe signal delay unit 11 to delay strobe signals T5 and T1b-T4b. ), And delay or logically generate the generated delay strobe signals T5 and T1b to T4b to generate the column path control signals liopcg, lio_rst, lio_pcgback, bwen, yi, iosa1, and iosa2. Column path control signals liopcg, lio_rst, lio_pcgback, bwen, yi, iosa1, and iosa2 that are affected by the PVT (Process, Voltage, Temperature) characteristics change of the CMOS transistor may be generated. As a result, despite the PVT (Process, Voltage, Temperature) characteristics change of the CMOS transistor, the timing margin between the column path control signals (liopcg, lio_rst, lio_pcgback, bwen, yi, iosa1, iosa2) as shown in FIG. Can be kept constant. In addition, in the embodiment of the present invention, the control signal liopcg in which the pulse width is reduced by using the second strobe signal mstrobe that reduces the pulse width of the first strobe signal strobe through the strobe signal controller 10. By generating lio_rst, lio_pcgback, bwen, yi, iosa1, and iosa2, control signals coming from the delay interval difference of the delayed strobe signals T5 and T1b-T4b The pulse width increase effect of iosa2) is canceled to keep the active or precharge operation period constant.

Hereinafter, the column path control circuit and the light driver controlled by the column path control signals (liopcg, lio_rst, lio_pcgback, bwen, yi, iosa1, iosa2) generated in the column path control signal generation circuit according to an embodiment of the present invention. The operation will be described with reference to Figs. 4, 6 and 7A and 7B. Here, the column path control circuit includes a cell core unit 20, a local input / output line control unit 30, and a column path control unit 40. The write driver includes first and second pull-up / pull-down signal generators 50 and 60. ), The first and second drivers 70 and 72 and the precharge unit 80.

First, the precharge operation will be described.

As shown in FIG. 4, in the precharge (pcg) state, the first and second local input / output line precharge signals liopcg and lio_pcgback and the local input / output line reset signal lio_rst are high level. Accordingly, the NMOS transistors N3 and N6 to N8 of FIG. 6 and the NMOS transistors N80-N82 of FIG. 6 are turned on so that the local input / output lines lio of FIGS. 6 and 7 have an equal potential VBLP / 2. Precharged. In this manner, the first and second local I / O line precharge signals liopcg and lio_pcgback and the local I / O line reset signals lio_rst that precharge the local I / O line lio to an equal potential VBLP / 2 are read or written. The enable state is maintained until the active operation by the operation and the like, and the timing is adjusted to be disabled after the active operation is started.

Next, the read operation will be described.

As shown in FIG. 4, when the output enable signal yi is enabled at a high level, the NMOS transistors N1 and N2 of FIG. 6 are turned on and the signal of the bit line amplified by the sense amplifier SA is local input / output. Passed on line (lio). Subsequently, when the input / output switch signal bsio is enabled at a high level, the NMOS transistors N4 and N5 are turned on so that a signal of the local input / output line lio of the cell core unit 20 is transmitted to the local input / output of the column path controller 40. Passed on line (lio). Next, as shown in FIG. 4, when the amplification control signal iosa1 is enabled at a high level, the NMOS transistors P1-P3 of FIG. 6 are turned on so that the local input / output line lio and the inverted local input / output line liob are turned on. ) Is amplified. Then, as shown in FIG. 4, when the latch control signal iosa2 is enabled to a high level, the PMOS transistors P4-P6 of FIG. 5 are turned on to thereby amplify the local amplified local input / output lines lio and inverted local I / O. The signal on line liob is latched. In order for the read operation to proceed without error, the enable timing of the column path control signals yi, iosa1, and iosa2 must be appropriately adjusted. That is, after the output enable signal yi is enabled, the amplification control signal iosa1 and the latch control signal iosa2 should be enabled sequentially. The timing between the column path control signals (yi, iosa1, iosa2) is affected by the change in the PVT (Process, Voltage, Temperature) characteristics of the CMOS transistor, according to the present invention all the column path control signals (yi, iosa1, iosa2) Is influenced the same so that the timing between signals remains constant. In addition, the present invention maintains the active or precharge operation period constant by appropriately maintaining the pulse width of the control signals (yi, iosa1, iosa2).

Next, the write operation will be described.

Referring to FIG. 7A, when the first pull-up / pull-down control signal bwen9z is enabled at a high level, an inversion signal giob of the global input / output line signal is buffered through the first inversion unit 52 to thereby enable the first latch unit ( 54, and a signal (giod) for delaying the global input / output line signal by a predetermined period is buffered through the second inverting unit 62 and transferred to the second latching unit 64. Referring to FIG. 7B, the first pull-up / pull-down control signal bwen9z is generated from the pull-up / pull-down control signal bwen and the local input / output precharge signal liopcgp10. Thereafter, when the second pull-up / pull-down control signal bwen12 is enabled to a high level, the NMOS transistors N53 and N63 are selectively turned on in response to the output signals of the first and second inverters 52 and 62 to pull down. The driven signal is transmitted to the third and fourth latches 57 and 67. Thereafter, the output signals of the third and fourth latch units 57 and 67 are delayed through the delay units 58 and 68, respectively, so as to drive the first and second pull-up units to drive the first and second drivers 70 and 80, respectively. / Pull-down signals pu1, pu2, pd1, pd2. In this case, the generated first and second pull-up / pull-down signals pu1, pu2, pd1, and pd2 selectively drive the first and second drivers 70 and 80 to each other to generate the local I / O line lio and the inverted local I / O. The global input / output line signal (giod) and its inverted signal are transferred to the line (liob).

As described above, in order for the precharge and read / write operations controlled by the column path control signals liopcg, lio_rst, lio_pcgback, bwen, yi, iosa1, and iosa2 to proceed correctly, the column path control signals liopcg and lio_rst. , lio_pcgback, bwen, yi, iosa1, iosa2), the timing margin should be kept constant. Therefore, the present invention generates the pre-charge and by the generation of the column path control signals (liopcg, lio_rst, lio_pcgback, bwen, yi, iosa1, iosa2) that is affected by the same change in the PVT (Process, Voltage, Temperature) characteristics of the CMOS transistor This prevents errors that can occur in read / write operations. In addition, the present invention maintains an active or precharge operation section constant by appropriately maintaining the pulse widths of the control signals liopcg, lio_rst, lio_pcgback, bwen, yi, iosa1, and iosa2.

Although the column path control signal generation circuit according to the present invention has been described with an example of being used to generate column path control signals, it is necessary to generate various signals that are equally affected by changes in PVT (Process, Voltage, Temperature) characteristics. It can be widely used in the device.

As described above, the column path control signal generation circuit and the method for generating the column path control signal according to the present invention delay the strobe signal through the same delay unit to generate the column path control signals necessary for the read / write operation of the semiconductor device. The generated column path control signals may have the same effect on the PVT (Process, Voltage, Temperature) characteristics of the CMOS transistor.

In addition, the timing margin between the column path control signals is maintained as originally designed in spite of a change in the process, voltage, and temperature (PVT) characteristics, thereby preventing a read or write operation error of the DRAM.

In addition, by reducing the pulse width of the strobe signal to generate a delayed strobe signal and a control signal to maintain the pulse width of the control signal appropriately, it is also possible to keep the active or precharge operation section constant have.

Claims (19)

A strobe signal controller configured to receive a first strobe signal having a first pulse width, and adjust a pulse width of the first strobe signal to output a second strobe signal having a second pulse width; A strobe signal delay unit receiving the second strobe signal and generating a plurality of delayed strobe signals by respectively delaying the second strobe signal to different delay periods; And a control signal generator configured to receive at least one delayed strobe signal among the plurality of delayed strobe signals and generate a first column path control signal for controlling the column path of the semiconductor device. The semiconductor of claim 1, wherein the strobe signal controller comprises a skew logic circuit configured to rapidly adjust a rising time or a falling time of the first strobe signal to generate the second strobe signal. A column path control signal generation circuit of the device. The method of claim 1, wherein the strobe signal delay unit A first delay unit generating a first delayed strobe signal by delaying the second strobe signal by a first delay period; And a second delay unit configured to delay the first delay strobe signal by a second delay period to generate a second delay strobe signal. The method of claim 3, wherein the control signal generating unit A logic unit configured to receive the first and second delay strobe signals and perform a logic operation; And a buffer configured to receive and buffer the output signal of the logic unit to generate the first column path control signal. 5. The column path control signal generation circuit of claim 4, wherein the logic unit performs an AND operation. 6. The column path control signal generation circuit of claim 5, wherein the buffer is an inverter. The semiconductor device column of claim 1, further comprising: a delay device configured to delay the output signal of the strobe signal delay unit by a predetermined period to generate a second column path control signal for controlling a signal of a local input / output line during a read operation. Path control signal generation circuit. The electronic device of claim 1, further comprising: a first delay element generating a second column path control signal for controlling an amplification of a signal of a local input / output line during a read operation by delaying an output signal of the strobe signal delay unit by a predetermined period; The semiconductor device may further include a second delay device configured to delay the second column path control signal by a predetermined period to generate a third column path control signal for controlling an operation of latching the amplified local input / output line signal during a read operation. Column path control signal generation circuit. Generating a second strobe signal having a second pulse width by adjusting a pulse width of the first strobe signal having a first pulse width; Receiving the second strobe signal and generating a plurality of delayed strobe signals by delaying the second strobe signals with different delay periods; Selecting at least one delayed strobe signal of the plurality of delayed strobe signals; And receiving the selected at least one delayed strobe signal to generate a first column path control signal for controlling the column path of the semiconductor device. 10. The column path control signal of claim 9, further comprising: generating a second column path control signal for controlling a signal of a local input / output line during a read operation by delaying the selected delay strobe signal by a predetermined period. How to create. 10. The method of claim 9, further comprising: generating a second column path control signal for controlling an operation of amplifying a signal of a local input / output line during a read operation by delaying the selected delay strobe signal by a predetermined period; Generating a third column path control signal for controlling the latching of the signal of the amplified local input / output line during a read operation by delaying the second column path control signal by a predetermined period; Path control signal generation method. A strobe signal controller configured to receive a first strobe signal having a first pulse width, and adjust a pulse width of the first strobe signal to output a second strobe signal having a second pulse width; A first delay unit receiving the second strobe signal and delaying the second strobe signal by a first delay period to generate a first delay strobe signal, and delaying the first delay strobe signal by a second delay period A strobe signal delay unit configured to include a second delay unit generating a second delay strobe signal; A column path control signal generation circuit of a semiconductor device including a control signal generation unit configured to receive the first and second delayed strobe signals and perform a logic operation to generate a first column path control signal for controlling a column path of the semiconductor device . The semiconductor device of claim 12, wherein the strobe signal controller comprises a skew logic circuit configured to generate the second strobe signal by rapidly adjusting a rising time or a falling time of the first strobe signal. A column path control signal generation circuit of the device. 13. The column path control signal generation circuit of claim 12, wherein the first and second delay units are inverter chains. The method of claim 12, wherein the control signal generator A logic unit configured to receive the first and second delay strobe signals and perform a logic operation; And a buffer configured to receive and buffer the output signal of the logic unit to generate the first column path control signal. 16. The column path control signal generation circuit of claim 15, wherein the logic unit performs an AND operation. The column path control signal generation circuit of claim 15, wherein the buffer is an inverter. The semiconductor device column of claim 12, further comprising a delay device configured to delay an output signal of the strobe signal delay unit by a predetermined period to generate a second column path control signal for controlling a signal of a local input / output line during a read operation. Path control signal generation circuit. 13. The apparatus of claim 12, further comprising: a first delay element generating a second column path control signal for controlling an amplification of a signal of a local input / output line during a read operation by delaying an output signal of the strobe signal delay unit by a predetermined period; The semiconductor device may further include a second delay device configured to delay the second column path control signal by a predetermined period to generate a third column path control signal for controlling an operation of latching the amplified local input / output line signal during a read operation. Column path control signal generation circuit.

Images