KR100817433B1 - Coating Structure of Resonator for Electrodeless Discharge Lamp - Google Patents

Abstract

The present invention relates to a coating structure of a resonator for an electrodeless lighting device, wherein the coating structure according to the present invention comprises a bridge layer formed of at least one composition of Ag, Cu, Au on the upper surface of the resonator, and At least one surface of the upper surface or the lower surface comprises a reflective layer formed of at least one composition of Al, Ni, Ni + B, B, W, Cr, Au, SiO ₂ . In this case, the reflective layer may be formed directly on the upper surface of the resonator without forming the bridge layer.

According to the present invention, the conductivity, light efficiency and heat resistance of the resonator are greatly improved, and generation of discoloration on the surface of the resonator is suppressed for a very long time even at room temperature or high temperature. In addition, manufacturing cost is greatly reduced because silver, which is an expensive material coated on the surface of the resonator, is replaced with a cheaper material as in the related art.

Electrodeless lighting device, resonator, coating structure, bridge layer, reflective layer

Description

Coating Structure of Resonator for Electrodeless Lighting Equipment {Coating Structure of Resonator for Electrodeless Discharge Lamp}

1 is a schematic structural diagram for explaining a general electrodeless lighting device.

Figure 2a is a perspective view showing a resonator used in a general electrodeless lighting device.

FIG. 2B is a detailed view of portion 'A' of FIG. 2A; FIG.

Figure 3 is a schematic structural diagram showing a laminated structure of each thin film coated on the upper surface of the resonator for an electrodeless lighting device according to the present invention.

Figure 4a is an electron micrograph of the cross-section of the thin film structure according to Example 1 of the present invention.

Figure 4b is an electron micrograph of the cross-section of the thin film structure according to the third embodiment of the present invention.

The present invention relates to a resonator for an electrodeless illuminator using microwaves, and more particularly, to a coating structure of a thin film layer for improving optical characteristics and heat resistance on the surface of a resonator for electrodeless illuminators using microwaves.

In general, an electrodeless lighting apparatus using microwaves is a device that obtains visible or ultraviolet rays from microwaves by applying microwaves to an electrodeless plasma bulb, which is also called a plasma lamp. The effect is excellent.

1 is a schematic structural diagram for explaining a general electrodeless lighting device.

The electrodeless lighting device includes a magnetron 1 for generating microwaves, a waveguide 3 for transmitting microwaves from the magnetron 1, and a material encapsulated therein by microwave energy transmitted through the waveguide 3. Light bulb 5 to generate light while being plasma, and the resonator 20 to cover the waveguide 3 and the front of the light bulb 5 to prevent the leakage of microwaves while passing the light emitted from the light bulb 5 It consists of.

In addition, the electrodeless illuminator includes a high pressure generator 7 for boosting the commercial AC power to the magnetron 1 at a high pressure, and a cooling device 9 for cooling the magnetron 1, the high pressure generator 7, and the like. ), A reflection shade 11 for intensively reflecting the light generated by the bulb 5 forward, and heat generated while rotating the bulb 5 to emit light.

The bulb motor 13 and the bulb shaft 15 to cool are further configured.

The general operation of an electrodeless illuminator is described briefly.

First, when a driving signal is input to the high pressure generator 7, the high pressure generator 7 boosts AC power from the outside to supply the boosted high pressure to the magnetron 1. The magnetron 1 generates microwaves having a very high frequency while oscillating by the high pressure supplied from the high pressure generator 7, and the generated microwaves are radiated through the waveguide 3 into the resonator 20 and the bulb 5 is discharged. The encapsulated material in the cell is discharged to generate light having a unique emission spectrum. In addition, the light is reflected to the front through the mirror 12 and the reflector 11 to function as an illumination.

FIG. 2A is a perspective view illustrating a resonator used in a general electrodeless lighting device, and FIG. 2B is a detailed view of portion 'A' of FIG. 2A.

The resonator 20 is formed in the form of a metal mesh and is assembled to the outlet portion 3a of the waveguide 3 to shield microwaves transmitted through the waveguide 3 so that microwave energy is converted into light in the light bulb 5. At the same time, while preventing the leakage of microwaves to the outside serves to transmit the light generated from the light bulb (5) to the outside.

The resonator 20 has a cylindrical portion 21 in which a plurality of holes 20b are formed by etching except for a part of the open portion 20a, and is formed in a convex shape so as to be connected to the front portion of the cylindrical portion 21. It consists of the lid part 25 in which the some hole 20b was formed by the etching process. At this time, the cylindrical portion 21 is composed of a reticular portion 22 through which light passes while blocking microwave leakage, and a non-reticular portion 23 which is not etched to be fixed to the outlet portion of the waveguide 3. do.

In this case, since the resonator 20 forms a resonance region while shielding the microwaves transmitted through the waveguide 3, not only high precision is required but also the light emitted from the light bulb 5 is well transmitted, and the light bulb 5 Heat resistance must be able to withstand the heat generated from). Techniques for increasing the light efficiency of a conventional resonator are described in Korean Patent Publication Nos. 2003-69722, 2001-19882, 2004-53668, and the like.

In general, the resonator 20 of the related art is made of stainless steel or phosphor bronze material, and a thin film layer made of silver (Ag) is plated on the surface thereof to improve conductivity or reflectivity.

However, such a conventional technology is expensive to use a lot of manufacturing costs, the economical efficiency is reduced, and also because the silver thin film layer is easily discolored by the heat of about 150 ℃ generated during use to reduce the reflectance to prevent this There was a problem that heat-resistant layer formation should be added. In addition, when the portion located around the bulb 5 where high heat is generated is easily generated by oxidation of the silver thin film layer, and is left at about 20 to 30 days at room temperature, discoloration of the silver thin film layer occurs. There was a serious problem.

Accordingly, the present invention has been made to solve the above problems, the object of the present invention is to replace the silver having the above problems and at the same time significantly improve the conductivity, light efficiency and heat resistance and can reduce the manufacturing cost The present invention provides a coating structure of a resonator for an electrodeless lighting device.

As a feature of the present invention for achieving the above object, the coating structure of the resonator for an electrodeless lighting device according to the present invention is a bridge layer formed of at least one composition of Ag, Cu, Au on the upper surface of the resonator, At least one surface of the upper surface or the lower surface of the bridge layer comprises a reflective layer formed of at least one composition of Al, Ni, Ni + B, B, W, Cr, Au, SiO ₂ It is done.

In addition, as another feature of the present invention, the coating structure of the resonator for an electrodeless lighting device according to the present invention is at least one of Al, Ni, Ni + B, B, W, Cr, Au, SiO ₂ on the upper surface of the resonator It is characterized by including a reflective layer formed of a composition.

In another aspect of the present invention, the bridge layer may be formed by at least one of wet plating, PVD, and CVD.

In another aspect of the present invention, the reflective layer is formed of at least one of a wet plating method, a PVD method, and a CVD method in the case of at least one composition of Ni, Cr, and Au.

In addition, as another feature of the present invention, the reflective layer is formed by a wet plating method in the case of at least one composition of Ni + B, B, and W.

In addition, the reflective layer is Al or SiO ₂ as another feature of the present invention At least one of the composition is characterized in that formed by at least one or more of the PVD method or CVD method.

Hereinafter, with reference to the accompanying drawings, the present invention will be described in detail.

3 is a schematic structural diagram showing a laminated structure of each thin film coated on the upper surface of the resonator for an electrodeless lighting device according to the present invention.

First, the resonator for an electrodeless illuminator according to the present invention is a resonator having a conventional structure, and a bridge layer 3 is formed to improve electrical conductivity and reduce electrical resistance on the surface 2 thereof. In this case, the material of the resonator is generally made of stainless steel or phosphor bronze. In addition, the bridge layer 3 may be formed of any one or more materials such as Ag, Cu, Au, or the like by wet plating, physical vapor deposition (PVD), chemical vapor deposition (CVD), or the like.

In addition, the resonator according to the present invention, the reflective layer 4 is formed on at least one of the upper or lower surface of the bridge layer 3 in order to improve optical characteristics and heat resistance. Alternatively, the reflection layer 4 may be formed directly on the resonator upper surface 2 without forming the bridge layer 3 on the resonator upper surface 2. Therefore, according to the present invention, the thin film 1 coated on the resonator upper surface 2 may consist of the bridge layer 3 and the reflective layer 4, or may consist only of the reflective layer 4.

The reflective layer 4 may be formed by at least one of Al, Ni, Ni + B, B, W, Cr, Au, and SiO _{2 by} wet plating, PVD, CVD, or the like. In particular, among these, it is preferable that Ni + B, B, W, etc. form the reflective layer 4 by the wet plating method, and Al, SiO ₂ It is preferable to form the reflective layer 4 by PVD method or CVD method.

EMBODIMENT OF THE INVENTION Hereinafter, the Example of this invention is described. The embodiments described below are provided to aid the overall understanding of the present invention, and the present invention is not limited to the following examples.

Example  1 ~ 4

Examples 1 to 4 observed the light efficiency characteristics according to each example as follows.

First, in the first embodiment, the bridge layer 3 is not formed in the laminated structure of FIG. 3, and the reflective layer 4 is made of Ag, Al, Ni, Ni + B, SiO ₂ , B, W, Cr, or the like. Was formed directly on the resonator upper surface 2 to a thickness in the range of approximately 3-10 μm. FIG. 4A illustrates a structure in which the bridge layer 3 is not formed, and Al or W is directly coated on the upper surface 2 of the resonator to form a reflective layer 4. Show electron micrographs. At this time, A indicates a cross section of the resonator upper surface 2, C indicates a cross section of the reflective layer 4, and M is a resin mount for taking an electron micrograph.

The light efficiency values according to Example 1 are shown in Table 1 below.

Table 1

Reflective layer material Ag Al Ni Ni + B SiO ₂ B W Cr Light efficiency (%) 95 89 90 89 92 92 90 90

In the second embodiment, after the bridge layer 3 is formed using Ag in the laminated structure of FIG. 3, Ag, Al, Ni, Ni + B, SiO ₂ are formed on the upper surface of the bridge layer 3. The reflective layer 4 was formed of materials such as, B, W, and Cr. At this time, the thicknesses of the bridge layer 3 and the reflective layer 4 formed were each formed in a thickness of approximately 3 to 10 μm. The resulting light efficiency values are shown in Table 2 below.

TABLE 2

Reflective layer material Ag Al Ni Ni + B SiO ₂ B W Cr Light efficiency (%) 98 93 93 92 93 92 92 93

In the third embodiment, after the bridge layer 3 is formed of Cu in the laminated structure of FIG. 3, the reflective layer 4 is formed on the upper surface of the bridge layer 3 in the same manner as in the second embodiment. It was. FIG. 4B illustrates a structure in which the bridge layer 3 is formed using Cu, and then Al or W is coated on the upper surface of the bridge layer 3 to form a reflective layer 4. Electron micrographs of the cross section of the bridge layer 3 and the reflective layer 4 are shown. At this time, A denotes a cross section of the resonator upper surface 2, B denotes a cross section of the bridge layer 3, C denotes a cross section of the reflective layer 4, and M denotes a resin mount for taking an electron micrograph.

The light efficiency values according to Example 3 are shown in Table 3 below.

TABLE 3

Reflective layer material Ag Al Ni Ni + B SiO ₂ B W Cr Light efficiency (%) 97 92 91 90 92 90 89 90

In the fourth embodiment, after the bridge layer 3 is formed of Au in the laminated structure of FIG. 3, the reflective layer 4 is formed on the upper surface of the bridge layer 3 in the same manner as in the second embodiment. It was. The resulting light efficiency values are shown in Table 4 below.

Table 4

Reflective layer material Ag Al Ni Ni + B SiO ₂ B W Cr Light efficiency (%) 98 94 92 93 94 92 91 92

Example  5 ~ 8

In Examples 5 to 8, the heat resistance according to each example was observed as follows.

First, in the fifth embodiment, the bridge layer 3 is not formed in the laminated structure of FIG. 3, and the reflective layer 4 is made of Ag, Al, Ni, Ni + B, SiO ₂ , B, W, Cr, or the like. Was formed directly on the resonator upper surface 2 to a thickness in the range of approximately 3-10 μm. The heat resistance according to this was confirmed by monitoring the discoloration after leaving for 500 hours at 400 ℃, which is shown in Table 5 below.

Table 5

Reflective layer material Ag Al Ni Ni + B SiO ₂ B W Cr Heat resistance clear clear clear clear clear clear clear clear

In the sixth embodiment, after the bridge layer 3 is formed using Cu in the laminated structure of FIG. 3, Ag, Al, Ni, Ni + B, SiO ₂ are formed on the upper surface of the bridge layer 3. The reflective layer 4 was formed of materials such as, B, W, and Cr. At this time, the thicknesses of the bridge layer 3 and the reflective layer 4 formed were each formed in a thickness of approximately 3 to 10 μm. The heat resistance according to this was confirmed in the same manner as in Example 5, which is shown in Table 6 below.

Table 6

Reflective layer material Ag Al Ni Ni + B SiO ₂ B W Cr Heat resistance clear clear clear clear clear clear clear clear

In addition, in the seventh embodiment, similarly to the fifth embodiment, only the reflective layer 4 was formed on the upper surface 2 of the resonator without forming the bridge layer 3. In order to observe the heat resistance according to this, after leaving at the temperature of room temperature, 300 ℃, 400 ℃, 500 ℃ was measured the time until the discoloration phenomenon starts. This is shown in Table 7 below, where the comparative example is a measured value for a resonator coated with a conventional silver thin film layer only.

TABLE 7

Test temperature Comparative example Reflective layer material  Remarks Ag Al Ni Ni + B SiO ₂ B W Cr Room temperature 720 2,000 2,000 2,000 2,000 2,000 2,000 2,000 2,000 Test ends after 2,000 hours 300 ℃ 380 1,428 1,438 1,478 1,488 1,318 1,435 1,456 1,457 400 ℃ 120 682 675 645 623 589 647 675 662 500 ℃ 60 302 285 246 278 256 245 357 367

In the eighth embodiment, the bridge layer 3 and the reflective layer 4 were formed in the same manner as in the sixth embodiment. In addition, the heat resistance according to the measurement of the time until the discoloration phenomenon started as in Example 7. This is shown in Table 8 below, where the comparative example is the same as in Example 7.

Table 8

Test temperature Comparative example Reflective layer material  Remarks Ag Al Ni Ni + B SiO ₂ B W Cr Room temperature 720 2,000 2,000 2,000 2,000 2,000 2,000 2,000 2,000 Test ends after 2,000 hours 300 ℃ 380 1,428 1,538 1,518 1,548 1,432 1,567 1,575 1,514 400 ℃ 120 721 742 702 732 724 735 734 735 500 ℃ 60 354 345 356 345 389 345 367 347

As described in the above embodiments, the coating structure according to the present invention maintains a similar level of light efficiency, even though the coating using a composition material of much lower price than the conventional resonator coated with only a thin film layer of silver At the same time, it shows much better characteristics in heat resistance.

As described above, the coating structure according to the present invention is a bridge layer having a composition of Ag, Cu, Au, etc. on the surface of the resonator, and a combination of Al, Ni, Ni + B, B, W, Cr, Au, SiO _2, etc. By laminating and coating the reflective layer or laminating only the reflective layer on the surface of the resonator, the conductivity, light efficiency and heat resistance of the resonator can be greatly improved. It is suppressed for a very long time.

In addition, according to the coating structure according to the present invention, since the expensive material to be coated on the surface of the resonator as conventionally replaced by a much cheaper material than the manufacturing cost is greatly reduced.

In addition, the preferred embodiment of the present invention is disclosed for the purpose of illustration, anyone of ordinary skill in the art will be possible to various modifications, changes, additions, etc. within the spirit and scope of the present invention, such modifications, changes, Additions and the like should be considered to be within the scope of the claims.

Claims (6)

In the resonator for an electrodeless lighting device, A bridge layer formed on at least one of Ag, Cu, and Au on the upper surface of the resonator; At least one of the upper surface or the lower surface of the bridge layer is characterized in that it comprises a reflective layer formed of at least any one composition of Al, Ni + B, B, W, Cr, Au, SiO ₂ Coating structure of resonator for electrodeless lighting equipment. In the resonator for an electrodeless lighting device, A coating structure of a resonator for an electrodeless lighting device, characterized in that it comprises a reflective layer formed on at least one of Al, Ni + B, B, W, Cr, Au, SiO ₂ composition on the upper surface of the resonator. The coating structure of a resonator for an electrodeless lighting device according to claim 1, wherein the bridge layer is formed by at least one of wet plating, PVD, and CVD. The resonator of claim 1 or 2, wherein the reflective layer is formed by at least one of wet plating, PVD, and CVD in the case of at least one of Cr and Au. Coating structure. The coating structure of a resonator for an electrodeless lighting device according to claim 1 or 2, wherein the reflective layer is formed by a wet plating method in the case of at least one of Ni + B, B, and W. The method of claim 1 or 2, wherein the reflective layer is Al or SiO ₂ The coating structure of the resonator for an electrodeless lighting device, characterized in that formed in at least any one or more of the PVD method or CVD method.

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