KR100817234B1 - Opposing target type sputter device - Google Patents

Abstract

The present invention provides a target facing sputtering apparatus which obtains a target unit having a long effective length without using an elongate target, and allows a film to be formed on a large area substrate. The target facing sputtering apparatus includes a box-shaped target facing sputtering unit 70 and a vacuum chamber 10. The sputtering part 70 includes a rectangular parallelepiped frame 71 having six faces 71a to 71f, and a pair of target units 100a and 100b. One of the six surfaces 71f serves as an open surface. The target units 100a and 100b each include a target and magnetic field generating means formed of permanent magnets disposed around the target. The magnetic field generating means generates a magnetic field of the opposite mode extending in the direction perpendicular to the plane of the target, and a magnetic field of the magnetron mode extending in the direction parallel to the plane of the target. The target unit is formed on the opposite surface of the frame located adjacent to the open surface. The remaining three faces 71c to 71e of the frame are shielded by the closing plates 71c to 72e (the faces 71c and the closing plate 72c on the adjacent side in the drawing are not shown). The sputtering portion is formed on the vacuum chamber so that the open surface faces the vacuum chamber. The substrate is disposed in the vacuum chamber so as to face the open surface. The target unit 100a includes a plurality of targets 110a ₁ and 110a ₂ , and the target unit 100b includes a plurality of targets 110b ₁ and 110b ₂ (not shown).

Substrate, film, cooling means, backing part, target, target module, module mounting part, permanent magnet, magnet housing part, unit support, target unit, sputtering assembly, restraint space, mounting compartment, film forming area.

Description

Target facing sputtering device {OPPOSING TARGET TYPE SPUTTER DEVICE}

The present invention provides a pair of targets facing each other with a predetermined space (hereinafter referred to as "confinement space"), and a direction installed around each of the opposing targets and perpendicular to the target surface ( Target opposing sputtering apparatus, which includes an opposing target sputtering portion including a permanent magnet for generating a magnetic field in an opposing mode extending in an opposing direction, wherein a film is formed on a substrate disposed so as to face a confining space. It is about. More specifically, the present invention, the target and each of the opposing target unit including the permanent magnet installed around the target; And a rectangular parallelepiped frame, wherein the target unit is mounted to an opposing side of the frame such that three of the remaining four sides of the frame (excluding the side acting as an open side) are closed. It is related with the preferable improvement of a box-type target counter sputtering part. Specifically, the present invention relates to an improvement of a target facing sputtering apparatus which can form a film on a wide substrate in an inline manner, and can form a film on a large substrate in a stationary state.

The target facing sputtering apparatus including the box-shaped target facing sputtering assembly described above is proposed by the inventor in Japanese Patent Application Laid-open No. Hei 10-330936 (US Pat. No. 6,156,172), and is shown in FIG. It is composed.

As shown in FIG. 18, the box-type target facing sputtering assembly 70 has four target units 110a and 110b formed adjacent to an opening surface 71f which serves as an opening of the rectangular parallelepiped frame 71. It is attached to the opposing surfaces 71a and 71b among the five surfaces 71a-71d (of five surfaces 71a-71e except the open surface 71f of the rectangular parallelepiped frame 71), and is provided with three surfaces 71c. ˜71e) are configured to be closed by closing plates 72c to 72e, respectively. The target unit 100a includes a target 110a and magnetic field generating means formed of permanent magnets installed along the target 110a, and the target unit 100b includes a target 110b (not shown), and a target. Magnetic field generating means formed of permanent magnets installed along the periphery; The appearance of the sputtering assembly 70 has a cuboid box shape, which may be a cube. The box-type target facing sputtering apparatus has a structure as described below. Specifically, as shown in Fig. 1, this box-shaped target facing sputtering assembly is connected to the vacuum chamber so that its open surface 71f faces the vacuum chamber, and the substrate on which the thin film is to be formed is the open surface ( Disposed in the vacuum chamber to face 71f).

In the present specification, the "X direction" refers to the direction of the magnetic field (that is, the opposite direction) formed to surround the constraint space formed between the pair of opposing targets, and the "Z direction" refers to the formation of the film from the constraint space. The direction toward the substrate, that is, the direction perpendicular to the substrate surface, refers to the direction "Y", the direction orthogonal to the X and Z directions, that is, the direction parallel to the target surface and the substrate surface. Coordinate axes corresponding to the X, Y and Z directions are referred to as "X-axis", "Y-axis" and "Z-axis".

In the sputtering apparatus having the above-described configuration, the magnetic field for generating and confining the sputtering plasma is formed as in the case of the conventional target facing sputtering apparatus disclosed in, for example, Japanese Patent Laid-Open No. 10-8246. Specifically, in the restraint space formed between the opposing targets of the target unit including the magnetic field generating means, a magnetic field in an opposing mode extending in a direction perpendicular to the target is formed over the entire target, and further near the target surface. A magnetic field in magnetron mode extending in a direction parallel to the target surface is formed at the peripheral edge of the target. As a result, a high density plasma is formed over the entire surface of the target.

Thus, in a box-type target sputtering apparatus including a box-type target sputtering assembly in which five faces except the open face are closed, the sputtered particles are dispersed through the open face in a high vacuum vacuum chamber in which the substrate is placed. And deposited on a substrate to form a thin film.

The conventional box-type target facing sputtering apparatus described above has a compact configuration and enables to form a high quality thin film at low temperature. Thus, sputtering apparatus has been applied to form various films. For example, the sputtering apparatus has been applied to the electrode formation of an organic EL device, which has recently been attracting attention and commercialized development has flourished, and various attempts have been made to apply the sputtering apparatus to electrode formation. In addition, attempts have been made to apply to the field of semiconductor devices. Review is underway. Some sputtering apparatuses are close to practical use.

As is well known, in mass production of these devices (for example, semiconductor devices such as display devices and memory devices), it is necessary to increase the area of the substrate to be used from the productivity side, the cost side, and the like.

For such requirements, the conventional target facing sputtering apparatus has the problem described below. For example, widening the distance between the opposing targets for a large area substrate lowers the strength of the magnetic field in the opposing direction for plasma confinement, so that the target opposing sputtering assembly does not function. Thus, in essence, the spacing between opposing targets cannot be increased beyond the limit in the opposing direction. In the conventional sputtering apparatus, when using a permanent magnet as the magnetic field generating means, the spacing between the magnets is limited to a maximum of about 20 cm. Therefore, when the film is formed on the substrate while the substrate is stopped, the size of the substrate is limited to about 20 cm or less. On the other hand, if the sputtering apparatus uses an inline method in which a film is formed while moving the substrate, the sputtering apparatus transfers the substrate in the X direction (specifically, the opposite direction), and the Y direction (that is, the direction perpendicular to the opposite direction). By lengthening the target length of, a substrate having a large area can be processed. In this case, however, the target to be used has a very long shape, and the target becomes expensive. In addition, there is a problem that uniform cooling of the target becomes difficult, productivity is restricted, or the target is easily broken depending on the material, and the handleability is poor.

An object of the present invention is to solve such a problem, and an object of the present invention is to provide a target facing sputtering apparatus capable of processing a large substrate without the above problems. Specifically, it is an object of the present invention to provide a target facing sputtering apparatus which can use an inline system without the above-described problems, and a target facing sputtering apparatus capable of processing a large substrate even when the substrate is stopped. will be.

In order to achieve the above object, according to a first embodiment of the present invention, there is provided a target facing sputtering apparatus for forming a film on a substrate,

a) a target module comprising i) a backing portion comprising cooling means, and a rectangular target mounted to the front side of the backing portion,

   ii) a unit support comprising, on a front face, a module mounting portion on which a target module is mounted, and a magnet receiving portion receiving permanent magnets to generate magnetic fields in opposite directions around the module mounting portion, and

    iii) the permanent magnet housed in the magnet housing

Opposing target unit comprising a; And

b) a target facing sputtering assembly comprising a pair of opposing target units arranged such that the target is opposed across the confinement space at a predetermined distance

Including,

Wherein a film is formed on the substrate disposed transverse to the confinement space so as to face a side of the confinement space,

In the target facing sputtering apparatus,

The module mounting portion of the unit support is divided into a plurality of mounting sections having a predetermined length in the horizontal direction parallel to the target surface and the substrate surface,

Each of the target modules having a predetermined length corresponding to the length of the mounting compartment is mounted in a sealable manner independently of each of the mounting compartments,

The target module is mounted in all the mounting compartments,

An elongated target formed of a plurality of target modules continuously aligned in a lateral direction and continuously coupled to each other is provided with a target facing sputtering apparatus, which completely covers the film forming region of the substrate extending in the lateral direction.

In order to achieve the above object, according to a second embodiment of the present invention, there is provided a target facing sputtering apparatus for forming a film on a substrate,

A pair of opposing target units arranged so that a pair of targets oppose each other across a confined space at a predetermined distance, and permanent magnets arranged in opposing directions around each of the targets to generate a magnetic field in opposing directions; A target facing sputtering assembly,

Wherein a film is formed on the substrate disposed transversely to the confinement space so as to face a side of the confinement space,

In the target facing sputtering apparatus,

By combining a plurality of said target facing sputtering assemblies by an intermediate target unit, a combined target facing sputtering assembly is formed,

The intermediate target unit comprises a plate-shaped intermediate unit support,

The plate-shaped intermediate unit support comprises, on each of its opposite surfaces, one of the targets of the target facing sputtering assembly to be joined, and a permanent magnet disposed around the intermediate unit support to generate an opposite magnetic field. Equipped,

The total thickness of the intermediate target unit, including the thickness of the target formed on both sides of the intermediate target unit, so that the sum of the thicknesses of the respective films on the portion of the substrate facing the side of the intermediate unit support is greater than a predetermined thickness Less than or equal to the specified thickness value,

Each film is formed by each of the target facing sputtering assemblies formed on both sides of the intermediate target unit,

The plurality of film forming regions corresponding to each of the target facing sputtering assemblies to be joined are joined in opposite directions to form one combined film forming region,

The combined target facing sputtering assembly having a single film forming region is formed

There is provided a target facing sputtering apparatus, characterized in that.

In the second embodiment of the present invention described above, preferably, the target facing sputtering device, each end target unit formed at both ends of the coupled target facing sputtering assembly,

a) a target module comprising a backing portion comprising cooling means, and a rectangular target mounted to the front side of the backing portion,

b) a unit support having a front surface, including a module mounting portion to which a target module is mounted, and a magnet receiving portion for receiving a permanent magnet to generate a magnetic field in an opposite direction around the module mounting portion;

 c) the permanent magnet housed in the magnet housing

Including,

The intermediate target unit,

a) an intermediate target module comprising said intermediate unit support with cooling means, and a target mounted on both sides of said intermediate unit support, and

b) permanent magnets disposed along the peripheral edge of the target to generate an opposing magnetic field

It is configured to include.

By this structure, the size of each end and intermediate target unit (in a direction perpendicular to the target), i.e., the thickness of each target unit, is reduced as a whole, corresponding to the target facing sputtering assembly on the intermediate target unit. The overlapping degree of the film forming region is increased at the position positioned in the transverse direction with respect to the intermediate target unit, and the combined sputtering assembly may be formed to have a compact box-shaped structure.

The predetermined thickness can be determined based on, for example, the required film thickness distribution. In view of the uniformity of the film thickness, the predetermined thickness is preferably more than the average thickness of the film formed in the required film forming region. In the region located laterally with respect to the intermediate target unit, the film is formed by superimposing sputtered particles dispersed from each sputtering assembly on both sides of the intermediate target unit. In the film forming region corresponding to each sputtering assembly, the thickness of the film is thicker at the center portion of the region and becomes thinner as it is moved away from the center portion. Accordingly, in order to obtain an average film thickness in the film forming region lying transverse to the intermediate target unit, the thickness of the film formed by each sputtering assembly in the film forming region lying laterally of the intermediate target unit is formed by each sputtering assembly. It is considered sufficient that the film forming regions of each sputtering assembly on both sides of the intermediate target unit overlap so as to be at least 50% of the maximum thickness of the film.

In order to achieve the above object, according to the third embodiment of the present invention, it is a combination of the first and second embodiments described above, and in each of the end target units,

A target module to which the end target unit is coupled;

In the combined target module, the module mounting portion of the unit support is divided into a plurality of mounting compartments having a predetermined length in a horizontal direction parallel to the target surface and the substrate surface, and corresponding to the length of the mounting compartment. One target module having a predetermined length is formed to be sealed independently of each of the mounting compartments,

The combined target module formed of the plurality of target modules aligned in the horizontal direction completely covers the film forming region of the substrate extending in the horizontal direction,

The intermediate target unit,

An intermediate unit support having cooling means, and targets mounted on both sides of said intermediate unit support, said plurality of intermediate target modules having a predetermined length, said intermediate target module being the total length in the transverse direction when aligned; The intermediate target module being horizontally aligned and coupled to each other such that is equal to the overall horizontal length of the end target unit, and

The permanent magnet disposed along the peripheral edge of the intermediate target module aligned as above, to generate an opposing magnetic field

Combined intermediate target unit comprising a,

The combined intermediate target module formed of the plurality of intermediate target modules aligned in the horizontal direction completely covers the film forming region of the substrate extending in the horizontal direction.

There is provided a target facing sputtering apparatus, characterized in that.

In the target facing sputtering apparatus according to the first embodiment of the present invention, target units having the combined target module described below are arranged opposite to each other. The combined target module is adjusted such that the length of the unit support in the Y direction (specifically, the horizontal direction) is greater than or equal to the length of the substrate in the Y direction, and the module mounting portions of the unit support each have a plurality of mountings having appropriate lengths. It is divided into compartments and includes a plurality of continuously aligned target modules, each target compartment being mounted with a target module. With this arrangement, no long target is required, and the effective target length can be increased by a combined target module formed of a plurality of aligned target modules each having a predetermined length. Therefore, according to the target facing sputtering apparatus of the first embodiment of the present invention, a large-area substrate is used while avoiding the problem of using an elongated target (for example, deterioration of workability, cost increase, and unevenness of cooling). Can be. In addition, the target module is standardized in terms of length, and a target and a backing part having a limited standard length can be provided, so that a large effect can be obtained in terms of manufacturing cost, maintenance, and spare parts.

In the target facing sputtering apparatus according to the second embodiment of the present invention, a plurality of target facing sputtering assemblies are combined by an intermediate target unit having one target on each side in each coupled target facing sputtering assembly. A combined target facing sputtering assembly is formed that has a single film forming region. According to the target facing sputtering apparatus having such a structure, by using a permanent magnet which can only be formed with a target facing sputtering assembly having a limited facing distance therebetween, providing a film forming region in which the effective length in the facing direction is not limited. A combined target facing sputtering assembly can be obtained to form a film of uniform thickness on a substrate that remains stationary and has a long area in the X direction (specifically, the opposite direction).

The target facing sputtering apparatus of the third embodiment of the present invention, which is a combination of the first and second embodiments described above, has no inherent limitations on the length in the horizontal direction (Y direction) and the length in the opposite direction (X direction), A film can be formed on a large area substrate which is kept in a stationary state.

As described above, the present invention can increase the size of the target facing sputtering device, thereby reducing damage to the lower layer by the plasma, and making it possible to increase the size that was difficult to realize. The present invention is, for example, manufacturing semiconductor devices, manufacturing flat panel displays (e.g., liquid crystal displays, organic EL displays), and functional films (e.g., high performance films formed on plastic films (e.g., It is widely applicable to the production of a film) formed of an ITO film).

1 is a perspective view showing a part of a sputtering apparatus of a first embodiment of the present invention in cross-sectional view.

2 is a schematic perspective view of a target unit of the sputtering apparatus of the first embodiment of the present invention.

3 is a cross-sectional view of the target unit at line A-A in FIG. 2.

4 is a perspective view of an auxiliary electrode used in the sputtering apparatus of the first embodiment of the present invention.

5 is a plan view of a unit support used in the sputtering apparatus of the first embodiment of the present invention.

6 is a perspective view showing a part of a sputtering apparatus of a second embodiment of the present invention in cross-sectional view.

7 is a schematic perspective view of an intermediate target unit used in the sputtering apparatus of the second embodiment of the present invention.

8 is a cross-sectional view of the target unit in the line B-B in FIG.

9 is a perspective view of a sputtering apparatus of a third embodiment of the present invention.

10 is a schematic perspective view of an intermediate target unit used in the sputtering apparatus of the third embodiment of the present invention.

FIG. 11 is a cross-sectional view of the target unit in the C-C line of FIG. 10.

12 is a cross-sectional view of the target unit in the line D-D in FIG. 10.

13 is a cross-sectional view showing a modification of the embodiment of the present invention.

14 is a sectional view showing another modified example of the embodiment of the present invention.

15 is a cross-sectional view showing yet another modified example of the embodiment of the present invention.

16 is a graph of the film thickness distribution of the film forming example 1 of the present invention.

Fig. 17 is a graph of the film thickness distribution of film forming example 2 of the present invention.

18 is a perspective view of a conventional box-shaped target opposed sputtering portion.

EMBODIMENT OF THE INVENTION Next, the Example of this invention is described in detail with reference to drawings.

[First Embodiment]

1 is a schematic perspective view including a partial cross-sectional view of a box-type target facing sputtering apparatus according to a first embodiment of the present invention. In the box-shaped target facing sputtering portion (hereinafter, abbreviated as " box-shaped sputtering portion ") 70 of the present embodiment, the target units 100a and 100b are (from the left and right side in Fig. 1) of the rectangular parallelepiped frame 71. Sealedly mounted on opposing surfaces 71a and 71b, respectively, and faces 71c to 71e (proximal side in FIG. 1) except for an open surface 71f that is positioned downward in FIG. 1 and opposes substrate 20. (C) and (71d, 71d) located on the distal side corresponding to the closing plate 72c to 72e (the front surface 71c in FIG. The closing plate 72c is hermetically closed with (not shown), that is, the surface except for the open surface 71f is closed. The box sputtering part includes a confining space 120 therein.

On the opposing faces of the target units 100a and 10Ob, two targets 10Oa ₁ and 10Oa ₂ and two targets 10Ob ₁ and 10Ob ₂ (target 10Ob ₂ not shown) are respectively Y-direction. Mounted to be aligned. The target units 10Oa and 10Ob each include permanent magnets 130a and 130b mainly for forming a magnetic field in the X direction, and permanent magnets 180a and 180b for adjusting the magnetic field in the magnetron mode. The permanent magnets 130a, 130b, 180a, and 180b are respectively fixed in the storage portion using the fixing plates 132a, 132b, 182a, and 182b. On the back of the target units 100a and 100b, a pole plate 191a for magnetically coupling the permanent magnets 132a and 182a, and a pole plate for magnetically coupling the permanent magnets 132b and 182b. 191b is installed. The pole plates 191a and 191b have openings 193a (not shown) and 193b for connecting the supply pipe and the drain pipe of the cooling water, respectively.

In front of each of the target units 100a and 10b (in this specification, "front" means the side where the confining space 120 between the opposing targets is formed, and "rear" means the opposite side of the front). A "U" shaped auxiliary electrode made of a copper tube for absorbing electrons shown in FIG. 4 to be described later (the main body of the electrode is not shown in FIG. 1 for easy viewing of the sputtering device) is provided. Support portions 201b and 201c (the support portion 201c is not shown) of the auxiliary electrode are provided on the closing plate 72e.

In this embodiment, the opposing target units 100a and 100b are detachably mounted to the frame 71.

FIG. 2 is a perspective view of the target unit used in the present embodiment, and FIG. 3 is a cross-sectional view of the target unit in the line A-A of FIG. 2 and 3 show the configuration of the target unit 100a. The target units 100a and 100b have the same configuration except that the arrangement of the magnetic poles N and S of the permanent magnet 130a serving as the magnetic field generating means and the permanent magnet 180a serving as the magnetic field adjusting means is reversed. Has Therefore, the detailed view of the target unit 100b is omitted.

As shown in FIG. 2, the target unit 100a is detachably attached to the frame 71 by the flange 155a of the unit supporter 150a. In the present embodiment, as described below, the target unit 100a includes a support module and two target modules. The target modules 200a ₁ and 200a ₂ are mounted to the unit support 150a of the support module so as to be aligned in the Y direction. The target module 200a ₁ , 200a ₂ includes a backing portion 113a ₁ , 113a ₂ and targets 110a ₁ , 110a ₂ fixed on the surface of the backing portions 113a ₁ , 113a ₂ , respectively. . As shown in FIG. 2, the backing portions 113a ₁ and 113a ₂ have mounting surfaces having the same shape as the targets 110a ₁ and 110a ₂ . Inside the backing part, partition walls 162a ₁ , 162a ₂ , which form cooling grooves 161a ₁ , 161a ₂ , are provided, as indicated by the dotted lines in FIG. 2, to form cooling jackets 160a ₁ , 16Oa ₂ . . Both ends of the cooling grooves 161a ₁ and 161a ₂ are connected to the connection ports 163a ₁ and 163a ₂ for supplying and draining the cooling water. The cooling grooves 161a ₁ , 161a ₂ are formed to cover the back surface of the targets 110a ₁ , 110a ₂ as wide as possible.

As shown in FIG. 3, the backing parts 113a ₁ and 113a _{2 to} which the targets 110a ₁ and 110a ₂ are bonded are installed on the front surface of the unit support 15Oa of the support module, and the module mounting part for mounting the target module. In the recessed portion 152a which acts as a seal, it is replaceably mounted by bolts 111a arranged at regular intervals and sealably mounted by O-rings 116a ₁ and 116a ₂ .

The cooling jackets 160a ₁ and 160a ₂ have a stepped concave portion including the partitions 162a ₁ and 162a _{2 of the} backing bodies 114a ₁ and 114a ₂ formed of a thick plate body of the backing portions 113a ₁ and 113a ₂ . It is formed by forming a back part and backing lid 115a ₁ , 115a ₂ provided with the connection port 163a ₁ , 163a ₂ by welding to a stepped recessed part, and sealing the recessed part. The backing portions 113a ₁ , 113a ₂ and the partitions 162a ₁ , 162a _{2 are} formed of a high thermal conductive material (specifically, copper in this example). Although not shown, a tube formed of a synthetic resin is installed through the through hole 154a provided in the unit support 150a, and is connected to the connection ports 163a ₁ and 163a ₂ through a connection tool, thereby cooling the jacket 160a. ₁ , 160a ₂ ) to allow the cooling water to pass through.

The targets 110a ₁ and 110a ₂ are bonded to the front surfaces of the backing portions 113a ₁ and 113a ₂ by a thermally conductive adhesive (for example, indium) to form the target modules 200a ₁ and 200a ₂ . The target modules 200a ₁ and 200a ₂ are mounted by bolts 111a to recesses 152a that serve as module mounting portions of the support module described below, and the cooling jackets 160a ₁ and 160a ₂ are vacuumed. The sealing O-rings 116a ₁ , 116a ₂ are blocked from the vacuum space (constraining space 12O), and the recesses 152a are in direct contact with the back surfaces of the backing portions 113a ₁ , 113a ₂ .

Two target module (200a _1, 200a ₂₎ target (11Oa _1, 11Oa ₂₎ There is a long effective length combined with, the Y-direction by the above-described configuration targets can be used is aligned in the Y-direction, the direction of A film may be formed on the elongated substrate. Therefore, by the inline method of forming a film while conveying a substrate in the X direction, a continuous film elongated in the Y direction (specifically, a continuous film having a long length in the horizontal direction), a wafer sheet having a large area having a long length in the horizontal direction, Alternatively, a film may be formed on a substrate (eg, a glass substrate) having a length in the horizontal direction. Each of the target modules 200a ₁ and 200a ₂ has cooling jackets 160a ₁ and 16Oa ₂ independent from each other, so that the targets 110a ₁ and 110a ₂ are cooled independently, so that cooling can be performed uniformly and effectively. . Therefore, a large power can be applied, and productivity can be improved. Two cooling jackets 160a of the target module 200a ₁ , 200a ₂ , to which cooling water can be supplied independently, depending on the situation, when small power is applied, that is, the film formation speed is small and large cooling is not required. ₁ and 160a ₂ may be connected in series by piping, and the drainage of one cooling jacket may be supplied to the other cooling jacket, and the piping system may be simplified.

In this embodiment, the effective length of the target in the Y direction is increased. If necessary, by using the permanent magnet 180a described below which serves as a magnetic field adjusting means, the erosion in the Y direction of the coupled target can be adjusted, so that the film thickness distribution in this direction can be adjusted.

The support module includes a unit support 150a formed from a high thermal conductivity material (in this example, an aluminum block) to have the shape shown in FIG. 2 by machining. The flange 155a constituting the unit support 150a is an electrically insulating sleeve through the vacuum sealing packing 156a and the O-rings 117a and 118a formed of an electrical insulating material (in this example, a heat resistant resin). It is mounted to the frame 71 in an electrically insulating manner by the bolts 112a arranged at regular intervals.

As shown in FIG. 2, the unit support 150a includes a support main body 151a of a rectangular parallelepiped and a flange 155a provided on a surface (bottom face in FIG. 2) of the support main body 151a. The flange 155a mounted to the frame 71 has a predetermined width. In the front face (upper surface in FIG. 2) of the support main body 151a, a recess 152a serving as a module mounting portion for mounting the target module is formed. As shown in FIG. 3, the accommodating part 131a for accommodating the permanent magnet 130a which acts as a magnetic field generating means in the circumferential wall part 153a which surrounds the recessed part 152a has a bottom face (as seen from FIG. 3). ), Ie from the side that is open toward air (hereinafter may also be referred to as the “atmosphere side”).

The recessed part 152a which acts as a module mounting part is comprised as shown in FIG. 5 so that two target modules may be mounted. Specifically, the bottom of the recess 152a serving as the module mounting portion is divided into two sections in the Y direction. In the partition thus formed, sealing surfaces 119a ₁ and 119a ₂ for the O-rings 116a ₁ and 116a ₂ set on the back surfaces of the backing portions 113a ₁ and 113a ₂ are formed so that the target module is independently sealed and mounted. Can be. Therefore, when a plurality of target modules are mounted in each of these mounting sections, the combined target modules can be configured as target modules aligned in the Y direction. In Fig. 5, for the sake of brevity, the mounting bolt holes of the target module are not shown. In the present embodiment, the front (upper side in FIG. 3) lateral end surface of the main upper wall portion 153a is the cover portion of the backing portions 113a ₁ , 113a ₂ of the target module, and the targets 11Oa ₁ , 11Oa ₂ . Covered with ends. In this configuration, the cover portion and the target end formed thereon act as conventional electron reflecting means. However, unlike the case of the conventional electron reflecting means mounted to the backing portion through the supporting member described later, this target end is directly bonded to the cover portion of the backing portions 113a ₁ and 113a ₂ . Therefore, it is cooled very efficiently, and a large power can be applied, so that the productivity can be improved as a whole. In addition, the configuration around the target is much simpler, which is a great advantage in terms of cost. However, when this target end acts as an electron reflecting means, when the target is formed of a magnetic material, it is difficult to form a magnetic field in the magnetron mode. In the case where the magnetic field of the magnetron mode is to be reliably formed near the front surface of the peripheral circumference of the target 110a ₁ , 11Oa ₂ (including the case where the target is formed of a magnetic material), the peripheral wall portion 153a is preferable. The cover portion of the backing portions 113a ₁ , 113a ₂ and the ends of the targets 110a ₁ , 110a ₂ overlapping with each other are removed and the peripheral wall portion 153a is similar to the case of the conventional electron reflecting means having an electron reflecting plate. Is increased, that is, the level of the pole end of the permanent magnet 130a is set so that the (front side) pole end face of the permanent magnet 130a is predetermined from the front face of the targets 110a ₁ and 110O ₂ inside the vacuum chamber. It is increased so as to protrude by the length.

In the center portion on the back surface of the support main body 151a of the unit support 150a, a trench having a predetermined depth is formed to cover almost the entire length of the target 110a ₁ , 110a _{2 in} parallel to the Y axis. . This groove is formed for mounting the permanent magnet 180a (see Fig. 1), which acts as a magnetic field adjusting means. The permanent magnet 180a may be installed in the groove to fill the entire groove, or may be installed at a predetermined interval. The permanent magnet 180a acting as the magnetic field regulating means is magnetically connected to the permanent magnet 130a acting as the magnetic field generating means by the pole plates 191a through the fixing plates 182a and 132a. The pole plate 191a made of ferromagnetic material is connected to the pole plate 191b of the target unit 100b, and to a connecting plate made of ferromagnetic material covering the entire surface of a closed plate (for example, 72c, 72d, or 72e), not shown. By magnetic connection. A connecting plate for magnetically coupling the pole plates 191a and 191b is inserted between the wall 11 of the vacuum chamber 10 and the frame 71 and has an opening so as not to narrow the open surface of the frame 71. It may also be a plate-like body. The pole plate 191a may be mounted to the target unit 100a with sufficient stability only by the magnetic force of the permanent magnets 130a and 180a. However, for safety, it may be fixed to the target unit 100a by a screw having an electrically insulating sleeve. The pole plate 191a is electrically insulated from the target unit 100a by fixing plates 182a and 132a made of an electrical insulation material, and is maintained at, for example, a ground potential.

As shown in Fig. 3, the accommodating portion 131a is opened outward so that the permanent magnet 130a serving as the magnetic field generating means can be removably disposed from the outside of the vacuum chamber (i.e. from the atmosphere side). It has a hole of a predetermined depth. The permanent magnet 130a is provided in the hole of this accommodating part 131a so that the magnetic pole of the permanent magnet 130a may be arrange | positioned as shown in FIG. In this embodiment, the permanent magnets 130a are formed of commercially available plate-shaped permanent magnets (for example, AlNiCo magnets) of a predetermined length and a predetermined width, and the predetermined number of permanent magnets 130a are the targets 110a _{1 and} 11Oa _2. ) Is installed along the peripheral edge of the combined target (i.e., the virtual target of targets 110a _1, + 110 O ₂ ). In the present embodiment, the permanent magnet 130a is fixed to the housing portion by an electrical insulating material (specifically, a fixing plate 132a made of a thin resin plate).

As shown in Fig. 1, the permanent magnets 130a and 130b provided in the target unit 100b facing the target unit 100a have the magnetic field that confines the plasma, i.e., the confined space. A magnetic field of opposite mode extending in the X direction to surround the space (120) formed between the pair of opposing coupled targets. On the other hand, the permanent magnet 130a alone, or a combination of the permanent magnet 130a, the permanent magnet 180a, and the pole plate 191a may be formed along the periphery of the coupled target formed by the targets 110a ₁ and 110a ₂ . Generate magnetic field of arc magnetron mode. The magnetic field extends from the surface of the end of the coupled target 110a ₁ + 110a ₂ located on the permanent magnet 130a toward the surface near the center of the coupled target. The magnetic field of the opposing mode of the former dominates the sputtering of the center of the coupled target, and the magnetic field of the magnetron mode dominates the sputtering of the periphery of the coupled target. As a result, the entire surface of the target (except for the above-mentioned peripheral edge portion serving as the electron reflecting means) is sputtered almost uniformly.

As described above, in the present embodiment, the permanent magnet 180a of the magnetic field regulating means is arranged to increase the strength of the magnetic field in the magnetron mode as a whole. The permanent magnet 180a is fixed by the fixing plate 182a made of a thin resin plate as in the case of the fixing plate 132a. By this magnetic field adjustment means, the magnetic field of the magnetron mode extending near the front surface of the periphery of the combined target which consists of targets 110a ₁ and 110a ₂ can be adjusted. Thus, the plasma confinement of the peripheral edge of the target governed by the magnetic field of the magnetron mode can be adjusted independently from the plasma confinement governed by the magnetic field of the opposing mode, so that the target can be eroded uniformly, so that the thin film can be oriented in the Y direction. It can be formed to obtain a uniform thickness.

By the way, in the box-type sputtering part, compared with the side-opening sputtering device, electrons are strongly constrained in the confining space of the sputtering unit, and hot electrons having lost energy are released from the opening of the box-type sputtering unit due to the material of the target or the like. Occurs. In order to cope with such a problem, in the present embodiment, the auxiliary electrode (which only shows the supporting portion 201b of the electrode in FIG. 1) which absorbs electrons directly from the plasma confining space, has the supporting portion of the closing plate 72e. It is sealably welded to a through-hole, and is installed so that the main-body part of an electrode may be located in restraint space. 4 is a perspective view of the closing plate 72e to which the auxiliary electrode is mounted. In this embodiment, the auxiliary electrode includes a main body portion 201a and support portions 201b and 201c made of copper tubes so as to correspond to the ends of the above-described combined targets serving as electron reflecting means where hot electrons are likely to stay. The auxiliary electrode is composed of a “U” shaped tubular electrode 201, and a part of the support of the auxiliary electrode protrudes outward from the closing plate 72e (ie, is exposed toward the atmosphere). In FIG. 1, the body portion 201a, which is not shown in order to make the sputtering unit easier to see, is constrained in a space 120 so as to be disposed parallel to the lower ends of the targets 110a ₁ , 110a ₂ , 110b ₁ , 110b ₂ . It is installed inside (see Fig. 1). The support portions 201b and 201c are provided near the front surface of the target along the adjacent end and the distal end of the target so that they are disposed parallel to the target surface. The anode potential (ground potential) is applied to the tubular electrode 201 as in the case of the closing plate 72e, and absorbs excess electrons (including hot electrons) generated in the confining space. Cooling water is circulated through the tubular electrode 201 for forced cooling of the former.

The arrangement and shape of the auxiliary electrode is not limited to that shown in FIG. 4. There is no limitation on the arrangement and shape of the auxiliary electrode as long as the electrode is disposed near the place where hot electrons are likely to stay. When such an auxiliary electrode was provided, it was confirmed that light emission generated when electrons stay in the plasma confined space was considerably reduced, and the temperature rise of the substrate during the formation of the film was also suppressed.

As described above, the target unit 100a is configured such that the two target modules 200a ₁ , 200a ₂ are aligned with the unit support 150a. The flange portion 155a of the target unit 100a is made of an electrically insulating material at regular intervals through a packing 156a made of an electric insulating material (specifically, a heat resistant resin) and O-rings 117a and 118a for vacuum sealing. It is attached to the frame 71 by the sleeve (not shown) and the bolt 112a. Therefore, as shown in FIG. 1, the target unit 100a is provided so that sealing is possible in the state electrically insulated from the frame 71, and the box-shaped sputtering part 70 demonstrated below is comprised.

The box sputtering part 70 includes a frame 71 made of a rectangular parallelepiped structural material (aluminum in this example). The target units 100a and 100b are sealably mounted to the surfaces 71a and 71b of the frame 71 so as to be electrically insulated from the frame 71. The closing plates 72c to 72e are connected to the bolts (not shown) through the O-rings (not shown) to the surfaces 71c to 71e (except for the open surface 71f facing the substrate 20). Sealingly attached (the surfaces 71c and 71d and the closing plate 72c are not shown), thereby being in a closed configuration. As long as the closing plates 72c to 72e have heat resistance, and the vacuum interruption is obtained by the closing plates 72c to 72e, the materials of the closing plates 72c to 72e are not limited. Thus, the closing plates 72c to 72e can be formed of conventional structural materials. In this example, the closing plates 72c to 72e are formed of lightweight aluminum used to form the frame 7l. As needed, in order to cool the closed plates 72c-72e, a cooling tube etc. are installed in each outside of the closed plates 72c-72e.

This box-shaped sputtering part 70 is sealable to the wall 11 by a bolt so that the opening part (opening surface 71f of the lower frame 71 in FIG. 1) may face the vacuum chamber 10. FIG. Is mounted. Therefore, the vacuum chamber 10 is electrically connected to the frame 7l by the bolt. In this embodiment, the target facing sputtering apparatus is configured such that a film is formed on the substrate holder 21 while the substrate 20 is kept stationary. However, it is also possible to employ an inline method in which a film is formed while the substrate is moved in the opposite direction by the conveying means. In the sputtering apparatus, a known load lock chamber (not shown) is connected to one of the side surfaces of the vacuum chamber 10, and the substrate 20 is formed by substrate loading and unloading means (not shown). It is comprised so that supply / export can be carried out from the holder 21.

In the above configuration box-sputtering assembly 70 with, for configuring the combined target corresponding opposite target (11Oa _1, 11Ob _1,), or the opposite target (11Ob _1, 11Ob ₂₎ (Target (11Ob ₂₎ is not shown Are disposed away from each other at predetermined intervals, and the magnetic field constraining the plasma is generated as in the case of the conventional sputtering apparatus shown in FIG. Therefore, the sputtering power supply is connected to an appropriate position of the wall 11 of the vacuum chamber 10 serving as the anode and to an appropriate position of the target units 100a and 100b serving as the cathode, and the sputtering gas (for example, When the sputtering power is supplied while Ar is introduced into the sputtering portion, the target is sputtered as in the case of the conventional sputtering apparatus. In the film forming embodiment described later, in the target facing sputtering apparatus, a wide area of film can be formed as desired, so that the film forming area is basically not limited by the horizontal length of the substrate.

Second Embodiment

6 is a schematic perspective view including a partial cross-sectional view of a box-type target facing sputtering apparatus according to a second embodiment of the present invention. In the box-shaped sputtering portion 70 of the present embodiment, the target units 100a and 100b positioned at both ends of the sputtering portion can be sealed on opposite sides 71a and 71b (left and right side in FIG. 6) of the rectangular parallelepiped frame 71, respectively. Surface 71c to 71e (surface 71c positioned immediately in front of the drawing and the surface 71d positioned inside) except for the open surface 71f positioned in contact with the substrate 20 and positioned downward in FIG. 6. ) Is hermetically covered with a closing plate 72c to 72e (the closing plate 72c not shown) corresponding to the face 71c located directly in front of FIG. 6, that is, Surfaces other than the open surface 71f are hermetically sealed. In addition, the intermediate target unit 300 is installed in the closing plate 72e through the insulating plate 331 at a position between the target units 100a and 100b. The intermediate target unit 300 has targets 110g and 11Oh respectively opposed to the target units 100a and 100b so as to form target facing sputtering portions on both surfaces thereof. In the sputtering apparatus of this embodiment, a target facing type in which a target facing type sputtering part including two restraining spaces 120 ₁ and 120 ₂ formed between the target units 100a and 100b is combined to form one film forming region. It is comprised so that a sputtering part may be possible.

The target units 10Oa and 10b located at both ends (in the opposite direction) of the combined target opposing sputtering portions each have a different target module than the combined target module shown in FIG. 1. And has the same configuration as shown in FIG. 1 except that it is formed of a single target module as in the case of a conventional sputtering apparatus. Reference numerals of the members constituting the target unit of FIG. 6 are also the same as in FIG. 1. Therefore, the detailed description is omitted and only the main points will be described below. Specifically, rectangular targets 110a and 110b of the same size are mounted on opposing surfaces of the target units 10a and 10b. Each of the target units 100a and 100b includes permanent magnets 130a and 130b mainly for forming a magnetic field in the X direction, and permanent magnets 180a and 180b for adjusting a magnetic field in the magnetron mode. The permanent magnets 130a, 130b, 180a, and 180b are fixed in the corresponding storage portions using the fixing plates 132a, 132b, 182a, and 182b, respectively. On the back surface of the target units 100a and 100b, a pole plate 191a for magnetically coupling the permanent magnets 130a and 180a and a pole plate 191b for magnetically coupling the permanent magnets 130b and 180b are provided. Each is installed. The pole plates 191a and 191b have openings 193a (not shown) and 193b for connecting the cooling water supply pipe and the drain pipe.

The intermediate target unit 300 includes an intermediate target module, magnet holding means (magnet holding tool 311 and magnet holding casing) for holding a permanent magnet 130c which generates a magnetic field in the X direction (particularly in the opposite direction). 314 to 316 (casings 314 and 316 are not shown), and permanent magnets 130c held by the holding means. The intermediate target module is made of a thick plate-like body of the same shape (ie, rectangular) as a target having a parallel surface on which targets are mounted on both sides, and has a cooling jacket (not shown in FIG. 6 for easy viewing of the sputtering device). ) And an intermediate unit support 301 with targets, and targets 110g and 110h mounted on a surface of the intermediate unit support 301 facing the constraining spaces 120 ₁ and 120 ₂ . The magnet holding means is mounted on four surfaces of the intermediate unit support 301 rather than the surface on which the target is mounted. As shown in FIG. 6, the exposed surface of the intermediate target unit 300 (the surface on which the targets 110g and 110h are not mounted) is covered with the shield plate 338 so as not to be sputtered. The shield plate 338 is mounted directly to the closing plate 72e. The closing plate 72e on which the intermediate target unit 300 is mounted has a through hole 76 for piping for circulating the cooling water in a cooling jacket provided on the intermediate unit supporter 301. Similarly to the first embodiment, in this embodiment, an auxiliary electrode for absorbing electrons is provided near the front ends of the targets 10a, 10g, 10h, and 10b (in order to simplify the drawing, the interior of the confined space is shown. Not shown), the support portions 201b and 201c of the auxiliary electrode (the support portion 201c is not shown) extend outwardly through the closing plate 72e.

Similarly to the case of the conventional sputtering apparatus, the opposing targets 110a and 110g are arranged at a predetermined distance from each other to form a confining space 120 ₁ , and the permanent magnets 130a and 130c are arranged along the periphery of the target. Preferably, it is arrange | positioned at the back surface of the edge part of target 110a, 110g, respectively. Similarly, the opposing targets 110b and 110h are arranged at a predetermined distance from each other to form a confining space 12O ₂ , and the permanent magnets 130b and 130c are arranged along the periphery of the target. It is provided in the back surface of an edge part, respectively. In this case, the permanent magnets 130c are common to the targets 100g and 100h, and the permanent magnets 130a and 130c (or the permanent magnets 130b and 130c) are arranged with different opposing magnetic poles. Therefore, a magnetic field of a predetermined opposing mode is formed in each of the target facing sputtering portions including the constraint spaces 1201 and 1202 formed on both sides of the intermediate target unit 300, and the plasma is confined in the constraint space. . At the same time, since the permanent magnets are disposed around the target module, an arc-shaped magnetron mode magnetic field is formed near the surface of the periphery of each target. In the present embodiment, for example, the permanent magnets 180a and 180b that act as magnetic field adjusting means for adjusting the magnetron mode magnetic field to the target units 10a and 10b in order to facilitate matching with the intermediate target unit 300. ) Is installed. However, the permanent magnets 180a and 180b may be omitted if there is no need to adjust the magnetic field.

The vacuum chamber 10 is disposed below the combined target facing sputtering portion formed by two target facing sputtering portions including the constraining spaces 12 ₁ , 120 ₂ . The wall 11 of the vacuum chamber 10 has an opening in a portion opposed to the lower surface (in FIG. 6) of the coupled target opposed sputtering portion. In the vacuum chamber 10, the substrate holder 21 holding the substrate 20 is provided below the opening. As in the first embodiment described above, the load lock chamber (not shown) is connected to one of the adjacent side and the distal side (in Fig. 6) of the vacuum chamber 10 so that the substrate 20 is supplied to the chamber or the chamber Can be removed from.

As described above, the target units 10Oa and 10b at the ends are mounted on the surfaces 71a and 71b of the frame 71 through the packings 156a and 156b made of a heat resistant resin, and the closing plates 72c to 72e. ) Are mounted on the surfaces 71c to 71e of the frame 7l (the surfaces 71c and 71d and the closing plate 72c are not shown). As will be described later, the intermediate target unit 300 is a heat-resistant resin. Alternatively, through the insulating plate 331 made of a similar material, the box-shaped sputtering portion 70 is configured to be sealably mounted on the surface of the closing plate 72e facing the vacuum chamber. And the frame 71 is attached to the wall 11 of the vacuum chamber 10 by bolts, so that the frame 71 is attached to the vacuum chamber 10. The target units 100a and 100b, the closing plates 72c to 71e and the vacuum chamber. 10 is sealably mounted to the frame 71 via an O-ring, and the restraint spaces 120 ₁ and 12O ₂ and the interior of the vacuum chamber 10 are isolated from the atmosphere.

The sputtered particles produced by the sputtering of the opposite target surface face the target facing sputtering portion including the confining spaces 12O ₁ , 12O ₂ and are directly below the target facing sputtering portion (as seen in FIG. 6). By accessing and depositing a film forming region of the substrate 20 to be positioned, a film is formed on the substrate. In this case, the sputtered particles also approach an area underneath the intermediate target unit 300 (as seen in FIG. 6), in which a film thinner than the thickness of the film formed in the area immediately below the confining space is formed. . That is, the film formation by the target opposing sputtering part includes not only the area | region which faces the opening part of a sputtering unit, but also the periphery. In the region corresponding to the central portion of the opening of the sputtering unit, the sputtered particles are deposited at about the same speed, so that a film having a nearly uniform thickness is formed. However, the further away from the center of the opening, the deposition rate is gradually lowered, and the thickness of the formed film is reduced. Thus, in the region immediately below the intermediate target unit 300, the sputtered particles generated in the target facing sputtering portions of both units 300 overlap and combine to form a film. Therefore, when the sputtering conditions are appropriately selected and the thickness of the intermediate target unit 300 in the X direction (specifically, the distance between the surfaces of the targets 110g 11Oh) is appropriately determined, the constraint spaces 12O ₁ and 120 _{2 are} determined. The thickness of the film formed in the region immediately below the target opposing sputtering part may be adjusted to be substantially the same as the thickness of the film formed in the region immediately below the intermediate target unit 300, that is, the film thickness in the X direction. It is contemplated that a film having a substantially uniform thickness can be formed on the substrate 20 by reducing the change of. That is, according to this embodiment, by the combined target facing sputtering portions formed by the target facing sputtering portions on both sides of the intermediate target unit, an area in which a film having a uniform thickness is formed is formed in the X direction (specifically, in the opposite direction). Can be effectively extended, so that a film can be formed in a stationary state on a large area substrate without limitation in the dimension of the X direction.

FIG. 7 is a perspective view of the intermediate target unit 300, and FIG. 8 is a cross-sectional view taken along line B-B of FIG. 7. FIG. 8 also shows the closing plate 72e and the insulating plate 331 to explain the state in which the intermediate target unit 300 is mounted on the closing plate 72e. As shown in FIG. 8, the intermediate unit support body 301 is formed from the high heat conductive thick copper plate-shaped object which has a target mounting surface on both surfaces. The intermediate unit support 301 includes a cooling jacket 302 formed therein with a cooling groove 303 partitioned by the partition wall 304. The connection port 305 is formed at both ends of the cooling groove 303, and the coolant is supplied or drained through a tube connected to the connection port 305. As shown in FIGS. 7 and 8, the targets 110 g and 110 h are bonded to the target mounting surface of the intermediate unit support 301 by, for example, indium. The magnet receiving groove 306 is formed in the remaining four surfaces of the intermediate unit support 301. It acts as a magnet holding means for accommodating the permanent magnet 130c in the magnet accommodating grooves 306 of three of the remaining four surfaces (except for the surface on the standby side, that is, the upper surface of Figs. 7 and 8). Magnet holding casings 314 to 316 (casing 316 not shown) are mounted by screws 334.

The atmospheric side of the intermediate unit supporter 301 acts as a magnet holding means for accommodating the permanent magnets 130c, and seals the unit support to a closing plate 72e provided outside the target unit. A magnet holding tool 311 is mounted which acts as a connection for making the connection. The magnet holding tool 311 includes a main body portion 312 having a stepped recess for holding the permanent magnet 130c in the X direction (specifically, the opposite direction), and a lid 313 inserted into the stepped recess. It includes. The back end of the stepped recess and the front end face of the side of the stepped recess can be sealed, and the main body 312 and the lid 313 of the magnet holding tool 311 hold the permanent magnet 130c. In the state held in the X direction, the bolt 335 is sealably mounted to the intermediate unit support 301. The intermediate target unit 300 is supported by the closing plate 72e by mounting the magnet holding tool 311 to the closing plate 72e via the insulating plate 331 by the bolt 336 having the insulating sleeve. It is electrically insulated from the closing plate 72e. The magnet holding tool 311 and the insulating plate 331 respectively have through holes 317 and 332 for connecting the cooling water supply tube. The insulating plate 331 has a through hole (not shown) for connecting the sputtering power supply wire to the wiring connection portion 318 provided in the lid 313 of the magnet holding tool 311. These through holes and the cooling jacket 302 of the intermediate unit supporter 301 are cut off from the vacuum side by the O rings 341 to 343. The magnet holding tool 311 and the magnet holding casings 314 to 316 (casing 316 not shown) are formed of a lightweight aluminum alloy.

The permanent magnet 130c housed in the magnet holding tool 311 and the magnet holding casings 314-316 is perforated so that the screw 334, the bolt 335, or the cooling water supply tube can pass therethrough.

Third Embodiment

9 is a schematic perspective view of the box sputtering portion 70 of the target facing sputtering apparatus according to the third embodiment of the present invention, viewed from the substrate side (vacuum control side). As shown in Fig. 9, one surface 71f of the rectangular parallelepiped frame 71 serves as an opening of a predetermined size facing the substrate side, and has a target unit 100a having the same configuration as in the first embodiment of Fig. 1. , 100b) is mounted on two opposing surfaces that sandwich the opening. The remaining three sides of the frame 71 are covered by the closing plates 72c to 72e. As described above, the two targets 110a ₁ and 110a ₂ (both not shown) constituting the combined target are mounted to the target unit 100a, and the two targets 110b ₁ , constituting the combined target. 11Ob ₂₎ it is mounted on the target unit (100b). Pole plates 191a and 191b are mounted on the rear surfaces of the target units 100a and 100b, respectively.

In the closing plate 72e mounted on the surface (bottom side) opposite to the opening, the joined intermediate target unit 300 ₀ is mounted as follows. The combined intermediate target unit 300 ₀ includes two intermediate target units 300 ₁ , 300 _{2 with} corresponding targets aligned in parallel. The intermediate target units 30O ₁ and 3OO ₂ have the same configuration as the intermediate target unit 30O of the second embodiment described above, except that the arrangement of the magnet holding casing serving as the magnet holding means is partially changed. Have Specifically, the target _{(11Oh 1, 11Og 1; 11Oh} 2, 11Og 2) is mounted in the middle of the target unit (300 _1, 300 ₂₎ intermediate the support unit (301 _1, 301 ₂₎ of the mounting on both sides of the target face. As shown in FIG. 9, the combined intermediate target units 300 ₀ are formed between the target units 100a and 10b each including the combined targets so as to be parallel to the target units 100a and 10b. Thus, two pairs of coupled targets each including two targets aligned in the Y direction (specifically, the horizontal direction) are formed, and two target facing sputtering portions each including a pair of coupled targets are formed. And are formed on both sides of the combined intermediate target unit 300 ₀ , and these target facing sputtering portions are combined by the coupled intermediate target unit 300 ₀ to form the combined target facing sputtering portion.

Since the target units 100a and 100b have the same configuration as that of the first embodiment described with reference to Figs. 1 to 3, detailed description thereof will be omitted. Hereinafter, the intermediate target unit of the present embodiment will be described in detail.

10 is a perspective view of a combined intermediate target unit 300 ₀ comprising two intermediate target units 300 ₁ , 300 ₂ , and FIG. 11 is a cross-sectional view of the target unit at line CC of FIG. 10. 12 is a cross-sectional view of the target unit in the line DD of FIG. 10. As shown in FIGS. 11 and 12, the intermediate unit supports 301 ₁ , 301 ₂ have zigzag cooling grooves 303 ₁ , 303 ₂ partitioned therein by partition walls 304 ₁ , 304 ₂ . As a result, cooling jackets 302 ₁ and 302 ₂ are formed. Both ends of the cooling grooves (303 ₁₎ is formed with a connection port (305 _1), both ends of the cooling grooves (303 ₂₎ is formed with a connection port ₍₂ 3O5). Cooling water is supplied or drained through a tube connected to the connection port. As shown in FIGS. 10 to 12, the target (110g _1, 11Oh ₁₎ and the target (110g _2, 110h ₂₎ double-sided target mounting face of this, for example the intermediate unit support (3O1 _1, 3O1 ₂₎ by indium Are bonded to each other. The grooves 3071 and 3062 for receiving magnets are laid on three surfaces (except for the surfaces in which the intermediate unit supports 301 ₁ and 301 ₂ are in contact with each other (ie bonded)). In each of the magnet receiving grooves 306 ₁ , 306 ₂ in two of the three surfaces described above (except for the atmospheric side (upper side of FIG. 10)), the permanent magnet 130c is perpendicular to the target. Magnet holding casings 314 ₁ , 315 ₁ and magnet holding casings 315 ₂ , 316 ₂ for receiving are mounted by screws 334.

On the atmospheric side of the intermediate unit supports 301 ₁ , 301 ₂ , the unit supports are provided as a magnet holding means for accommodating the permanent magnets 130c, and a closing plate 72e provided outside the target unit. Magnetic holding tools 311 ₁ , 311 ₂ are mounted which act as external connections for connection. The magnet holding tools 311 ₁ , 311 _{2 each} have a main body portion 312 ₁ , 312 ₂ (having a stepped recess for holding the permanent magnet 130c so as to generate a magnetic field in a direction perpendicular to the target), and the stepped It is formed by the lids 313 ₁ , 313 ₂ inserted in the recesses (for the sake of simplicity of the drawing, the stepped recesses are shown as recesses without steps in FIG. 11). The main body portions 312 ₁ and 312 ₂ and the lids 313 ₁ and 313 _{2 of the} magnet holding tools 311 ₁ and 311 ₂ are intermediate units by bolts 335 while the permanent magnets 130c are held. It is mounted to the seal support (301 _1, 3O1 _2). The magnet holding tools 311 ₁ , 311 ₂ have through holes 317 ₁ , 317 ₂ for connecting the cooling water supply / drainage tubes, and the lids 313 ₁ , 313 ₂ have a sputtering power supply on the upper surface thereof. It has wire connection parts 318 ₁ and 318 ₂ for connecting a wire. The cooling jackets 302 ₁ , 302 ₂ of the intermediate unit support body are O-rings 341 ₁ , 341 ₂ provided on the rear surface of the main body portions 312 ₁ , 312 _{2 of the} magnet holding tools 311 ₁ , 311 ₂ , and The O-rings (not shown, corresponding to the O-rings 342 in FIG. 8) disposed on the atmospheric side (upper part in FIG. 11) of the main body parts 312 ₁ and 312 ₂ are isolated from the vacuum space. Similar to the second embodiment, the magnet holding tools 311 ₁ , 311 ₂ are mounted to the closing plate 72e by means of bolts (not shown) with electrically insulating sleeves, through the insulating plates. Therefore, the combined intermediate target unit 30O ₀ , in which the intermediate target units 300 ₁ , 300 ₂ are aligned in the Y direction, is supported by the closing plate 72e in an electrically insulated state, and thus box sputtering shown in FIG. 9. The unit 70 is assembled. As in the second embodiment, an auxiliary electrode (not shown) for absorbing excess electrons generated in the confining space is provided in the closing plate 72e so as to be located near the front end of the target to which the auxiliary electrode is coupled.

Bound formed between the the box-shaped sputtering unit 70 assembled as described above, as shown in Figure 9, opposite the target (11Oa _1, 11Oa ₂₎ (both not shown) and the target (11Og _1, 11Og ₂₎ area target opposite type sputtering unit including a (120 _1), and an opposite target (11Ob _1, 11Ob ₂₎ and the target (110h _1, 11Oh ₂₎ target opposite formula sputtering comprising the constraining space (12O ₂₎ formed between The addition is formed. In the target opposite type sputtering unit including a constraining area (120 _1), constrained area with a target combination of the magnetic fields of the opposite mode, that is, formed into a target alignment in the Y-direction extends in the X direction so as to surround the (120 ₁₎ ( 110a ₁ + 110a ₂ and 110g ₁ + 110g ₂ ). In the target opposite type sputtering unit including a constraining area (120 _2), restraint area with target binding be the magnetic field of the opposite mode extending in the X direction so as to surround the (12O _2), formed in a target alignment in the Y direction ( 110b ₁ + 110b ₂ and 110h ₁ + 110h ₂ ). On the other hand, for each coupled target, the magnetic field in magnetron mode is formed along the peripheral edge of the coupled target, i.e., along the peripheral edge of the surface of the target (except the surface in contact with the corresponding surface of the adjacent target). do.

As in the case of the first and second embodiments, the box-shaped sputtering portion 70 has an opening (i.e., an open surface of the upper frame 71 as shown in FIG. 9) facing the vacuum chamber. So that it is sealably mounted to the wall of the vacuum chamber by bolts. Therefore, the vacuum chamber is electrically connected to the frame 71 by the mounting bolt. As in the above embodiment, the substrate is disposed in the vacuum chamber so as to face the opening, so that a film is formed on the substrate. As described in the second embodiment, at the time of film formation, the sputtered particles generated in the confining spaces 120 ₁ and 120 ₂ of the target facing sputtering portion are formed in the region immediately below the combined intermediate target unit 300 ₀ , And an area just below the confined spaces 120 ₁ , 120 ₂ . Thus, the thickness of the film to be formed directly below the target unit 300 ₀ can be adjusted to be equal to the thickness of the film to be formed in the region immediately below the confining spaces 120 ₁ and 120 ₂ , ie, a substrate having a large area. A film having a nearly uniform thickness can also be formed.

In the third embodiment, one coupled intermediate target unit 300 ₀ is provided to form two target facing sputtering portions, and the two targets are aligned in the Y direction at each coupled target. However, two or more combined intermediate target units 300 ₀ may be disposed between the target units 100a and 100b, and / or three or more targets may be aligned in the Y direction, thus having a large area. A film may be formed on the substrate. The number of intermediate target units to be installed or targets to be aligned may be arbitrarily selected. Therefore, the formed target facing sputtering apparatus can process the large area substrate in which the magnitude | size of the horizontal direction and the longitudinal direction of a board | substrate is not restrict | limited fundamentally.

FIG. 13 is a cross-sectional view showing the configuration of the combined intermediate target unit 300 ₀ when three targets are aligned in the Y direction. In this case, a combined intermediate target unit (30O ₀₎ is the end intermediate target unit (30O _1, 3O0 _2), and the target unit (30O _1, 3O0 ₂₎ in the central portion intermediate target unit formed in (3OO ₃₎ between Include. Since the end intermediate target units (3O0 _1, 300 ₂₎ is of the same configuration as the unit (30O _1, 3O0 ₂₎ shown in FIG. 11, detailed description thereof will be omitted. The intermediate unit support of the analogy in the case of intermediate unit support of the end intermediate target unit, a central portion intermediate the target unit (3OO ₃₎ (3O1 ₃₎ has, on its inside, the partition wall (3O4 ₃₎ to the cooling groove (303 ₃ defined by ), A cooling jacket ₃₀ is formed. Are formed, the connection port (305 _3), both ends of the cooling grooves (303 _3), cooling water is supplied or drained through a tube connected to the connection port.

Surface of the central portion is parallel to the XZ plane, the intermediate support unit (301 ₃₎ (specifically, the support end of the intermediate unit (301 _1, 301 ₂ and the surface to be bonded)), the permanent magnet is not arranged. A groove for accommodating magnets for accommodating magnets (surfaces serving as connection portions to be connected to the outside, and surfaces opposite to the connection surfaces) of the intermediate unit support 3O1 ₃ parallel to the XY plane (illustrated) Not formed). Similar to the end intermediate target units 300 ₁ , 30 O ₂ , the atmospheric side (upper part in FIG. 13) of the intermediate unit support 3O 1 ₃ acts as a magnet holding means for accommodating the permanent magnets 130c, and The magnet holding tool 311 ₃ serving as an external connection for connecting the unit support to the closing plate installed outside the target is mounted. Magnet holding tool (311 ₃₎ is stepwise recessed portion with the main body portion (312 _3), and consists of a lid (313 ₃₎ to be inserted into the stepwise concave portion (in Fig. 13, stepwise concave portion, the concave does not have a staircase Appear as wealth). The body portion (312 ₃₎ and the lid of the magnet holding tool (311 ₃₎ (313 ₃₎ is mounted on the intermediate support unit (3O1 ₃₎ by a bolt 335. The Magnet holding tool (311 _3), having a through hole (317, ₃₎ for connecting a coolant feed tube, the lid (313 _3), on the upper surface thereof, the wire connecting portion (318 ₃₎ for connecting a wire of a sputtering power Has The cooling jacket 302 ₃ of the intermediate unit supporter 3013 is an O-ring 3413 disposed on the back side of the main body 312 ₃ of the magnet holding tool 311 ₃ , and the atmospheric side of the main body 312 ₃ . The O-ring (not shown, corresponding to the O-ring 342 in Fig. 8) disposed on the surface (upper part in Fig. 13) is isolated from the vacuum space. Similar to the case of the magnet holding tools 311 ₁ and 311 ₂ , the magnet holding tool 311 ₃ is mounted to the closing plate by bolts through the insulating plate.

The support modules of the target units 100a and 100b disposed to face the combined intermediate target unit 300 ₀ each include three target modules. In this case, the end target module is configured in the same manner as the target modules 200a ₁ and 200a ₂ shown in FIGS. 2 and 3, and in the center target module, two surfaces parallel to the ZX plane are coupled with the terminal target module. And two surfaces parallel to the XY plane are configured to contact the peripheral wall of the support body portion. Although not shown, similarly to the embodiment of the second embodiment, the driving exposed surface (the surface other than the target surface) of the joined intermediate target unit is covered by the shield plate.

In the target facing sputtering apparatus of the first to third embodiments, the targets are all formed of a nonmagnetic material. In the case where the target is formed of a magnetic material, it is preferably provided so that the target does not cover the magnetic pole of the permanent magnet for forming the magnetic field in the opposite mode. More preferably, the electron reflecting means is provided at the peripheral edge of the target (the peripheral edge of the combined target formed of the target aligned in the Y direction when the target is aligned in the Y direction). 14 is a cross sectional view of a target unit 100a in which two targets formed of magnetic material are aligned in the Y direction, and FIG. 15 is a cross sectional view of an intermediate target unit in which two targets formed of the magnetic material are aligned in the Y direction. to be.

In Fig. 14, parts corresponding to those in the first embodiment shown in Fig. 3 are given the same reference numerals, and overlapping descriptions are omitted. In the case of the first embodiment, the cover part covering the circumferential wall 153a of the support main body part 151a is formed in the backing parts 113a ₁ and 113a _{2 of the} target modules 200a ₁ and 20Oa ₂ . However, in the case shown in Fig. 14, such a cover portion is omitted, and the backing portions 113a ₁ and 113a ₂ are formed in a rectangular parallelepiped shape. As shown in FIG. 14, the electron reflection means 170a is attached to the circumferential wall 153a of the support main body 151a. The electron reflecting means 170a is characterized in that the electron reflecting plate 171a having a width that faces the peripheral edges of the targets 110a ₁ , 110a ₂ is made of copper (ie, a high thermal conductive material) having a cross section of an “L” shape. It is comprised so that it may be supported by the mounting part 172a which consists of. The electron reflecting plate 171a is formed of a ferromagnetic material (for example, an iron plate) so as to act also as a magnetic pole of the magnetic field generating means.

In FIG. 15, the parts corresponding to the parts of the third embodiment shown in FIG. 12 are given the same reference numerals, and overlapping descriptions are omitted. In the case of the third embodiment, the magnet receiving grooves 306 ₁ , 306 ₂ are laid in three surfaces of the intermediate unit supports 301 ₁ , 301 ₂ . However, also, the 15 cases, the middle unit substrate (301 _1, (301 ₂₎ is not formed with a magnet receiving recess and has a middle unit substrate (301 _1, 301 ₂₎ has the shape of a rectangular parallelepiped type. Shown in Fig. 15 As described above, the electron reflecting means 170c is mounted to both end faces of each of the magnet holding casings 314 ₁ and 316 ₂ that accommodate the permanent magnet 130c. The electron reflecting plate 171c having a width facing the peripheral edge is configured to be supported by the mounting portion 172c made of a copper plate (that is, a high thermal conductive material) The electron reflecting plate 171c is formed of a magnetic field generating means. It is formed of a ferromagnetic material (for example, iron plate) so as to act as a magnetic pole.

Although not shown in FIG. 15, the electron reflecting means 170c includes both end faces of each of the magnet holding tools 311 ₁ and 311 ₂ , and both end faces of each of the magnet holding casings 315 ₁ and 315 ₂ (see FIG. 11). Is mounted on. With this configuration, the target (11Og _1, 11Og ₂₎ with the bonds formed target, and the target (11Oh _1, 11Oh ₂₎ target binding which is formed (that is, 110g ₁ + 110g ₂ and 110h ₁ + 110h ₂₎ The peripheral edge of is covered with the electron reflecting means 170c.

Next, a film forming embodiment in which a film is actually formed by the target facing sputtering apparatus of the first and second embodiments will be described.

[Film Formation Example 1]

In the target facing sputtering apparatus of the first embodiment shown in FIG. 1 including an oppositely coupled target, the five target modules have a total length of 1300 mm in the transverse direction of each of the coupled targets, and the distance between the oppositely coupled targets. Was aligned in the Y direction (ie, transverse direction) so that is adjusted to 90 mm. The substrate holder was placed at a position 80 mm away from the bottom end of the target, and the glass substrate was aligned transversely on the substrate holder. Power was supplied in parallel from a common power source to both coupled targets formed of metal oxide, forming a film on the glass substrate such that the metal oxide film had a maximum thickness of 1 μm or more. The thickness of the film thus formed was measured with a stylus profilometer to evaluate the film thickness distribution.

16 shows the evaluation results of the film thickness distribution. 16 shows the distribution of the film thickness (in the Y direction) measured at the point corresponding to the center line between the targets. The film thickness measured at the center point (measurement point 7 in FIG. 16) is 100% (ie, reference), and the film thickness measured at other measurement points is expressed as a percentage (%) relative to the reference value. The measuring points were located at 10 cm intervals in the Y direction.

As is apparent from the graph of FIG. 16, even if the width of the film is as large as 1 m, the film has a uniform thickness, that is, the thickness of the film is in a range of ± 10% with respect to the average thickness. Such data corresponds to the case where no film thickness adjustment is performed by the film thickness adjusting mask, for example. This is because, when the film thickness adjustment is performed, for example, when a mask is installed near the center portion between the targets and the thickness of the portion of the film corresponding to the center portion is reduced, the formed film has more stringent requirements in terms of film thickness distribution. (Eg, ± 5% of average thickness). Thus, when a target facing sputtering apparatus comprising a bonded target is used, the film is continuously formed by an inline system, for example, on a wide substrate necessary for the production of a functional film (eg, a transparent conductive film). Can be.

Film Formation Example 2

In the target facing sputtering apparatus of the second embodiment including the combined target facing sputtering portion, a target having a Z direction of 100 mm and a Y direction of 315 mm was used so that a film could be formed on an 8 inch wafer. In the combined target facing sputtering section, the thickness of the intermediate target unit (ie, the distance between the faces of the targets installed on both sides of the target unit) is 60 mm, the distance between the opposing targets is 145 mm, and the size of the open surface in the X direction. The sizes in the and Y directions were adjusted to 350mm and 315mm, respectively. In the target unit provided at both terminals of the sputtering portion, the permanent magnets 180a and 180b used for the magnetic field adjustment in the second embodiment are omitted.

In this target facing sputtering apparatus, an 8-inch wafer was placed at a distance of 10 mm from the target, and using a target of metal oxide, power was supplied in parallel from a common power source to the end target unit and the intermediate target unit, and onto the wafer. The film was formed such that the metal oxide film had a maximum film thickness of 1000 kPa or more. The thickness of the film thus formed was measured with a stylus roughness meter to evaluate the film thickness distribution.

17A and 17B show evaluation results of the film thickness distribution. FIG. 17A shows the film thickness distribution in the X direction (ie, the opposite direction). The film thickness was measured at 10 mm intervals on the X-direction centerline of the open face. FIG. 17B shows the film thickness distribution in the Y direction (ie, horizontal direction). The film thickness was measured at 10 mm intervals on the Y-direction centerline of the open face. Measuring point 6 corresponds to the center of the open face. The film thickness measured at the center of the open face is 100% (ie, reference) and the film thickness measured at other measuring points is expressed as a percentage (%) relative to the reference value.

As is clear from the graph of the figure, even in 8-inch wafers, the film thicknesses measured in the X and Y directions were within ± 10% of the average thickness. The result is that when a 6 inch wafer is used, the resulting film has a very uniform thickness, ie the film thickness is within ± 5% of the average group thickness. Further, for example, when the film thickness adjusting mask is provided, the uniformity of the film thickness can be further improved. Therefore, when the target facing sputtering apparatus including the coupled target facing sputtering portion is used, it is possible to enlarge the film forming region in the opposite direction, which has not been possible in the past, and thus to manufacture the semiconductor device while the substrate is stopped. A film can be formed on a substrate having a large area required for.

Claims (24)

A target facing sputtering apparatus for forming a film on a substrate, a) a target module comprising i) a backing portion comprising cooling means, and a rectangular target mounted to the front side of the backing portion,    ii) a unit support having a front surface, including a module mounting portion to which a target module is mounted, and a magnet receiving portion for receiving a permanent magnet to generate a magnetic field in an opposite direction around the module mounting portion;     iii) the permanent magnet housed in the magnet housing Opposing target unit comprising a; And b) a target facing sputtering assembly comprising a pair of opposing target units arranged such that the target is opposed across the confinement space at a predetermined distance Including, Wherein a film is formed on the substrate disposed transversely to the confinement space so as to face a side of the confinement space, In the target facing sputtering apparatus, The module mounting portion of the unit support is divided into a plurality of mounting compartments having a predetermined length in the horizontal direction parallel to the surface of the target and the surface of the substrate, Each mounting compartment has a predetermined length corresponding to the length of the mounting compartment, and a target module each having a connecting port for supplying and draining cooling water is independently sealably mounted, The target module is mounted in all the mounting compartments, An elongated target formed of a plurality of target modules continuously aligned in a horizontal direction and continuously coupled to each other completely covers a film forming region of the substrate extending in the horizontal direction. The method of claim 1, The target facing sputtering assembly comprises a rectangular parallelepiped frame, and is a box-shaped target facing type in which the facing target unit is mounted on each of two opposite faces of the frame positioned adjacent to an open face facing the substrate. A sputtering assembly, wherein the remaining three sides of the frame are hermetically closed. The method of claim 1, And the target of the opposing target unit is formed to cover the front end surface of the magnet housing portion. The method of claim 3, The front end surface of the magnet housing portion is covered by a protrusion formed at the front end of the backing portion, and the target is formed so as to cover the protrusion. The method of claim 1, Electromagnetic reflecting means for reflecting electrons is formed on the front end face of the magnet housing portion. The method of claim 1, An auxiliary electrode for absorbing electrons is formed in the restraint space formed between the opposing targets. The method of claim 6, A target facing sputtering device, characterized in that an auxiliary electrode for absorbing electrons is formed near the front end surface of the magnet housing portion so as to extend along the front end surface of the magnet housing portion. The method of claim 1, The permanent magnet of the opposing target unit is arranged to generate a magnetic field in an opposing mode extending in the opposing direction, and a magnetic field in an arc-shaped magnetron mode extending near a peripheral edge of the face of the target; Target facing sputtering device. The method of claim 1, And said unit support comprises magnetic field adjusting means for regulating a magnetic field in magnetron mode. A target facing sputtering apparatus for forming a film on a substrate, A pair of opposing target units arranged so that a pair of targets oppose each other across a confined space at a predetermined distance, and permanent magnets arranged in opposing directions around each of the targets to generate a magnetic field in opposing directions; A target facing sputtering assembly, Wherein a film is formed on the substrate disposed transversely to the confinement space so as to face a side of the confinement space, In the target facing sputtering apparatus, By combining a plurality of said target facing sputtering assemblies by an intermediate target unit, a combined target facing sputtering assembly is formed, The intermediate target unit comprises a plate-shaped intermediate unit support, The plate-shaped intermediate unit support comprises, on each of its opposite surfaces, one of the targets of the target facing sputtering assembly to be joined, and a permanent magnet disposed around the intermediate unit support to generate an opposite magnetic field. Equipped, The total thickness of the intermediate target unit, including the thickness of the target formed on both sides of the intermediate target unit, so that the sum of the thicknesses of the respective films on the portion of the substrate facing the side of the intermediate unit support is greater than a predetermined thickness Less than or equal to the specified thickness value, Each film is formed by each of the target facing sputtering assemblies formed on both sides of the intermediate target unit, The plurality of film forming regions corresponding to each of the target facing sputtering assemblies to be joined are joined in opposite directions to form one combined film forming region, The combined target facing sputtering assembly having a single film forming region is formed Target facing sputtering apparatus, characterized in that. The method of claim 10, Each of the end target units formed at both ends of the combined target facing sputtering assembly, a) a target module comprising a backing portion comprising cooling means, and a rectangular target mounted to the front side of the backing portion, b) a unit support having a front surface, including a module mounting portion to which a target module is mounted, and a magnet receiving portion for receiving a permanent magnet to generate a magnetic field in an opposite direction around the module mounting portion;  c) the permanent magnet housed in the magnet housing Including, The intermediate target unit, a) an intermediate target module comprising said intermediate unit support with cooling means, and a target mounted on both sides of said intermediate unit support, and b) permanent magnets disposed along the peripheral edge of the target to generate an opposing magnetic field Containing Target facing sputtering apparatus, characterized in that. The method of claim 11, The combined target facing sputtering assembly is a box-shaped target facing sputtering assembly comprising a cuboid-shaped frame, In the box-shaped target facing sputtering assembly, the end target units are respectively mounted to two opposing faces of the frame located adjacent to an open face facing the substrate, with the remaining three faces of the frame being It is closed in a sealable way, The intermediate target unit is supported by a closing plate that closes the face of the frame facing the open face. Target facing sputtering apparatus, characterized in that. The method of claim 12, A target module to which the end target unit is coupled; In the combined target module, the module mounting portion of the unit support is divided into a plurality of mounting compartments having a predetermined length in a horizontal direction parallel to the target surface and the substrate surface, and corresponding to the length of the mounting compartment. One target module having a predetermined length is formed to be sealed independently of each of the mounting compartments, The combined target module formed of the plurality of target modules aligned in the horizontal direction completely covers the film forming region of the substrate extending in the horizontal direction, The intermediate target unit, An intermediate unit support having cooling means, and targets mounted on both sides of said intermediate unit support, said plurality of intermediate target modules having a predetermined length, said intermediate target module being the total length in the transverse direction when aligned; The intermediate target module being horizontally aligned and coupled to each other such that is equal to the overall horizontal length of the end target unit, and The permanent magnet disposed along the peripheral edge of the intermediate target module aligned as above, to generate an opposing magnetic field Combined intermediate target unit comprising a, The combined intermediate target module formed of the plurality of intermediate target modules aligned in the horizontal direction completely covers the film forming region of the substrate extending in the horizontal direction. Target facing sputtering apparatus, characterized in that. The method of claim 13, Each of the intermediate target modules formed at both ends in the horizontal direction of the combined intermediate target unit includes the magnet holding means along three sides except for the side in contact with the adjacent intermediate target module. When a central intermediate target module is formed between the end intermediate target modules, the central intermediate target module is disposed on a side opposite to the atmosphere side and the atmosphere side except for a side contacting an adjacent intermediate target module. Magnet holding means, wherein the permanent magnet is housed in the magnet holding means. Target facing sputtering apparatus, characterized in that. The method of claim 10, The said intermediate target unit is provided with the said magnet holding means in four side surfaces of the said intermediate unit support body other than the said target mounting surface, The permanent magnet sputtering apparatus characterized by the permanent magnet being accommodated in the said magnet holding means. The method of claim 14, The magnet holding means arranged on the atmosphere side, A recess for holding the permanent magnet in a predetermined direction, the back end of the recess and the front end face of the side of the recess being a sealing portion; and Lid covering the recess of the main body Including; The magnet holding means is configured as a connecting portion for connecting the intermediate target module to the atmosphere, The rear surface of the recess is sealably mounted to the atmospheric side of the intermediate unit supporter, and the front surface of the lid is sealably mounted to the closure plate by sealing the front end surface of the side portion of the recess, Through the connecting portion, the intermediate unit support is connected to the cooling means, the target can be connected to a power source Target facing sputtering apparatus, characterized in that. The method of claim 10, The predetermined thickness is a target facing sputtering device, characterized in that the average thickness of the film formed in the film formation region where the substrate is disposed is equal to or more than. The method of claim 14, And the target is formed so as to cover the front end surface of the magnet housing portion and both side surfaces in the opposite direction of the magnet holding means. The method of claim 18, The front end surface of the magnet housing portion and both side surfaces in the opposite direction of the magnet holding means are covered with protrusions formed at the front end of the backing portion and the intermediate unit support, and the target is formed to cover the protrusions. A target facing sputtering device characterized by the above-mentioned. The method of claim 14, Electromagnetic reflecting means for reflecting electrons is formed on both of the front end surface of the magnet housing portion and on opposite side surfaces of the magnet holding means. The method of claim 10, An auxiliary electrode for absorbing electrons is formed in the restraint space formed between the opposing targets. The method of claim 21, The auxiliary electrode is formed near the front end surface of the magnet housing portion and on both sides in the opposite direction of the magnet holding means, and extends along the front end surface and the both side surfaces. . The method of claim 10, And the permanent magnet is arranged to generate a magnetic field in an opposing mode extending in an opposing direction, and a magnetic field in an arc-shaped magnetron mode extending near a peripheral edge of the surface of the target. The method of claim 11, And said unit support comprises magnetic field adjusting means for regulating a magnetic field in magnetron mode.

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