KR100800707B1 - Belt conveyor type atmospheric pressure chemical vapor deposition apparatus - Google Patents

Abstract

The present invention relates to a belt conveyor type Atmospheric Pressure Chemical Vapor Deposition (APCVD) equipment.

The present invention is a belt having a plenum plate to remove the contaminants on the circulation belt 22 by spraying the etching gas to the circulation belt 22 to be carried out while continuously transporting the wafer (W). In the conveyor type atmospheric vapor deposition equipment, the plenum plate 300 is characterized in that it comprises an exhaust means for sucking and removing contaminants such as residual etching gas and by-products generated by the etching.

In addition, the branch exhaust pipes connected to the exhaust port 40 of the plenum plate 30 for injecting the etching gas to the circulation belt 22 for transporting the wafer W and the main exhaust pipe in the factory are installed. In the belt conveyor type atmospheric chemical vapor deposition apparatus having an exhaust manifold connected in the middle, the exhaust manifold 500 is provided with inlet connection ports 504 to which the branch exhaust pipes are connected. Characterized in that the tubular body 502 is formed to be inclined so that the side is located in a high position and the side on which the outlet side connection port 506 to which the main exhaust pipe is connected is located in a low position.

Therefore, since various pollutants generated during etching on the circulation belt can be exhausted and removed more smoothly, the pollutants inside the exhaust manifold can be improved while preventing wafer defects caused by the pollutants. Since it can be discharged through more smoothly without stagnation, there is a great effect, such as preventing production interruption and improving productivity.

Belt, Conveyor, Atmospheric Chemical Vapor Deposition, APCVD, Plenum, Foshan, Etch, Exhaust, Manifold

Description

Belt conveyor type atmospheric chemical vapor deposition equipment {BELT CONVEYOR TYPE ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION APPARATUS}

1 is a schematic view showing the configuration of a conventional belt conveyor type APCVD equipment,

2 is a schematic plan view showing a plenum plate in a conventional belt conveyor type APCVD equipment;

3 is a schematic cross-sectional view showing an exhaust manifold in a conventional belt conveyor type APCVD equipment;

4 is a schematic view showing a plenum plate in a belt conveyor type APCVD apparatus according to a preferred embodiment of the present invention;

5 is a schematic cross-sectional view showing an exhaust manifold in a belt conveyor type APCVD apparatus according to a preferred embodiment of the present invention.

<Description of the symbols for the main parts of the drawings>

10: muffle 12: injector

22: end belt 22-u: upper side belt

22-d: lower side belt 30: plenum plate

30a: injection hole 31: fixed plate

40: exhaust port 50: exhaust manifold

52: tubular body 54: inlet connection port

56 outlet port 300 plenum plate

302: injection area 302a: injection hole

302b: exhaust port 304: exhaust area

304b: secondary exhaust port 500: exhaust manifold

502: tubular body 502a: filtration filter

502b: drawout door 504: inflow connection port

506 outlet side connection port W wafer

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a belt conveyor type Atmospheric Pressure Chemical Vapor Deposition (APCVD) equipment, and more particularly, to smoothly exhaust various contaminants generated. It relates to a belt conveyor type atmospheric pressure chemical vapor deposition equipment that can prevent the occurrence of defects.

In general, a semiconductor device is manufactured through a number of unit processes, and during the unit process, chemical vapor deposition (Chemical Vapor Deposition) which forms a predetermined thin film on a wafer by chemically reacting a reaction gas and a wafer surface with each other; Hereinafter, there is a process called "CVD", and among the CVD equipment which performs the CVD process, an atmospheric pressure chemical vapor deposition (Atmospheric Pressure Vapor Deposition) in which a chemical reaction proceeds while the reaction chamber pressure is maintained at normal pressure; Hereinafter referred to as "APCVD" equipment.

Among the APCVD equipment, there is a belt conveyor type APCVD equipment which deposits a thin film on the wafer continuously while seating and transferring the wafer on a circulating belt.

1 is a schematic view showing the configuration of a conventional belt conveyor type APCVD equipment.

The belt conveyor type APCVD apparatus is provided on the circulation belt 22 which is provided to be circulated so as to seat and transport the wafer W, and on the upper side of the belt 22-u of the upper side of the circulation belt 22. A muffle 10 including an injector 12 for injecting a reaction gas for deposition onto a wafer W transported on the upper belt 22-u and a circulation belt. It is provided at the lower side with respect to the lower side belt 22-d of (22), and sprays etching gas in a bubble state with respect to the lower side belt 22-d, and is put on the lower side belt 22-d. It is composed of a plenum plate (30) to be buried contaminants are etched and cleaned.

The action is that the wafer W passes over the muffle 10 side with the wafer W seated on the upper belt 22-u of the circulation belt 22, where the wafer W is heated and the muffle ( Reaction gas is injected from the injector 12 of 10) and the reaction gas and the surface of the heated wafer W are chemically reacted with each other to deposit a predetermined thin film on the surface of the wafer W. The wafer W is to be unloaded from the upper side belt 22-u.

However, in the thin film deposition process in the muffle 10, the deposition is performed not only on the wafer W but also on the circulation belt 22. Thus, the wafer W is removed to remove contaminants deposited on the circulation belt 22. Etch gas is injected from the plenum plate 30 on the lower side to the lower side belt 22-d which is moved to the lower side after unloading), and contaminants on the belt 22-d are etched and removed. Will be done.

Here, the plenum plate 30 is usually provided with one or more to be spaced apart from each other in a manner fixed to a separate fixing plate (31).

Referring to the plan view of FIG. 2, a plurality of injection holes 30a are generally formed on the upper surface of each plenum plate 30, and bubble etching gas is injected from the injection holes 30a. At this time, hydrofluoric acid (HF) gas is mainly used as an etching gas.

In addition, an exhaust port 40 for sucking and exhausting various contaminants such as residual etching gas and by-products generated by the etching, which is partially sprayed on the upper side of the plenum plate 30 and used for etching. Will be provided.

However, during the operation, some of the etching gas injected from the injection holes 30a of the plenum plate 30 falls and falls on the plenum plate 30 on the lower side to exist in the liquid state. The etching solution in the state blocks some of the injection holes 30a on the plenum plate 30, thereby preventing the etching gas from being smoothly injected through the corresponding injection holes 30a to the lower side belt 22-d. The stable etching can not be performed.

In this way, when a stable etching is not performed, the belt 22-d is transferred to the muffle 10 again with contaminants remaining, causing particle defects for the next wafer W. In addition, the film uniformity of the wafer W may not be secured, thereby lowering the production yield and contaminating the inside of the muffle 10.

As described above, the pollutant is exhausted through the exhaust port 40 provided in the vicinity of the plenum plate 30, but its performance is rather inferior, and contaminants remain in this aspect. In other words, the situation is intensifying.

On the other hand, the branch exhaust pipes (not shown) provided on the equipment side so as to be connected to the exhaust port 40 and the like on the plenum plate 30 side as described above, the exhaust manifold (50) as shown in FIG. The parts are connected to the main exhaust pipe (not shown) in the factory.

The exhaust manifold 50 has a tubular body 52 that forms a communication space therein, and a plurality of tubular bodies 52 are formed on the long side of the tubular body 52, and the inlet side is connected to each branch exhaust pipe. The connection port 54 and the tubular body 52 are formed on the short side and are integrated with the outlet side connection port 56 which is connected to the main exhaust pipe.

Here, the exhaust manifold 50 currently used in the belt conveyor type APCVD equipment has four inlet connection ports 54, two of which are exhaust ports 40 on the plenum plate 30 side described above. It is connected to the side, and the other two are connected to the exhaust port (not shown) side provided on the muffle 10 side described above.

However, the following problems arise in the exhaust manifold 50 as described above.

That is, when the suction pressure (suction input) from the main exhaust pipe side is lowered or hunting (hunting) occurs at the suction pressure, the contaminants are stagnated inside the tubular body 52, and the contamination generated from the equipment side afterwards. By not being able to smoothly evacuate the materials, a problem arises in that the wafer W is defective and the productivity is reduced due to the production interruption due to the exhaust error.

In addition, when contaminants become stagnant in this manner, the exhaust manifold 50 must be disassembled and washed, which causes inconvenience.

The present invention has been devised to solve the above problems, while immediately discharging the etching solution to be present in the liquid state falling on the plenum plate while preventing the injection holes to be blocked by the etching solution, the injection It is an object of the present invention to provide a belt conveyor type APCVD apparatus in which an additional exhaust area portion is provided next to an area in which holes are provided to exhaust contaminants that have not been exhausted so that the belt can be transported back to the muffle side in a cleaner state. .

In addition, another object of the present invention is to provide an exhaust manifold capable of smoothly passing contaminants without stagnation.

Belt conveyor type APCVD apparatus of the present invention for achieving the above object, by spraying the etching gas to the circulating belt 22 to perform the deposition while continuously transporting the wafer (W) on the circulating belt 22 In the belt conveyor type atmospheric chemical vapor deposition apparatus having a plenum plate to remove contaminants, the plenum plate 300 sucks and removes contaminants such as residual etching gas and by-products generated by etching. It is characterized by comprising an exhaust means for.

In addition, the belt conveyor type APCVD apparatus of the present invention for achieving the above-mentioned other object, the plenum plate 30 for injecting an etching gas to the circulation belt 22 to perform the deposition while transferring the wafer (W) In the belt conveyor type atmospheric pressure chemical vapor deposition equipment having an exhaust manifold for connecting the branch exhaust pipes connected to the exhaust port 40 of the plant and the main exhaust pipe in the factory, the exhaust manifold 500 includes: The inlet side connection ports 504 to which the branch exhaust pipes are connected are positioned at a high position and the outlet side connection ports 506 to which the main exhaust pipe is connected are formed to be inclined so as to be positioned at a low position. It characterized in that it comprises a tubular body (502).

The above objects and various advantages of the present invention will become more apparent from the preferred embodiments of the invention described below with reference to the accompanying drawings by those skilled in the art.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

4 is a schematic view showing a plenum plate in a belt conveyor type APCVD apparatus according to a preferred embodiment of the present invention.

The plenum plate 300 is bubble-etched with respect to the lower belt 22-d of the endless belt 22 to allow continuous wafer W deposition through its upper belt 22-u. By spraying the gas, the contaminants on the lower side belt 22-d are etched and cleaned. On the upper surface thereof, a plurality of injection holes 302a are generally formed, so that the etching gas is discharged through the injection holes 302a. To be injected.

According to the present invention, the plenum plate 300 is injected with a plurality of injection holes 302a for etching gas injection, and then is exhausted for mainly discharging the etching solution that is present in the liquid state on the upper surface thereof. An injection area 302 having an upper surface 302b and a lower side belt 22-d passing through the injection area 302 are provided on a side through which the residual etching gas is passed. And an exhaust area 304 provided with a secondary exhaust port 304b for sucking and exhausting various contaminants such as by-products resulting from etching.

Here, the injection area 302 and the exhaust area 304 may be configured to be combined and integrated with each other, the exhaust port 302b on the injection area 302 and the secondary exhaust port 304b on the exhaust area 304. ) Are internally communicated with each other to be connected to the main exhaust pipe (not shown) side, and thus to suck and remove various pollutants by the suction force acting from the main exhaust pipe side.

Further, since the injection holes 302a on the injection area 302 are provided in a plurality of rows parallel to each other, the exhaust ports 302b are arranged in a plurality of rows perpendicular to the rows of the injection holes 302a. It may be provided to form, of course, the exhaust port 302b may have a different distribution form if it can smoothly discharge the etching solution that is dropped after being injected from the injection holes (302a) to exist in the liquid state, of course As described above, since the suction force is applied to the exhaust ports 302b, not only the liquid etching solution but also various kinds of contaminants in the gas and solid state are sucked and exhausted.

Thus, when the plenum plate 300 according to the present invention is used, the etching solution which is dropped after being injected and is present in the liquid state on the upper surface thereof is immediately discharged through the exhaust ports 302b and sprayed by the corresponding etching solution. Since the holes 302a can be prevented from being blocked, a stable injection of the etching gas is ensured, so that the excellent etching performance for the lower side belt 22-d is continuously maintained.

In addition, since the contaminants such as residual etching gas and by-products are additionally sucked and exhausted from the next exhaust area 304, the belt 22-d may be moved back to the muffler 10 in a cleaner state. As a result, the generation of defects on the next wafer W is prevented, and the muffle 10 is also not contaminated.

On the other hand, Figure 5 is a schematic cross-sectional view showing the exhaust manifold in the belt conveyor APCVD equipment according to a preferred embodiment of the present invention.

The exhaust manifold 500 is branched exhaust pipes (not shown) provided on the equipment side so as to be connected to the plenum plate 300 and the muffler 10 side to be connected to the exhaust ports 40 that suck in the pollutants. A component that connects the main exhaust pipe in the factory with each other, the configuration of which includes a tubular body 502 forming a communication space therein and a plurality of tubular bodies 502 formed on a long side of the tubular body. The inlet side connecting port 504 to be connected to the exhaust pipe and the outlet side connecting port formed on the short side of the tubular body 502 orthogonal to the inlet side connecting port 504 described above are connected to the main exhaust pipe. It is made integral with 506.

Exhaust manifold 500 according to the present invention is a tubular body (such that the inlet side connection ports 504 is located in a high position and the outlet side connection port 506 is located in a low position) 502 is formed to be inclined, so that the contaminants introduced into the inner space through the inlet connection ports 504 flow more smoothly from a high position to a low position and can be passed without stagnation in the interior. Various problems due to the internal stagnation of the material can be prevented.

In addition, the inlet connection ports 504 may also be formed to be inclined in the inclined direction of the tubular body 502 in order to achieve a smoother discharge of the contaminants passed.

Further, the inside of the tubular body 502 is provided with a filtration filter 502a, by filtering the incoming contaminants to smoothly pass the gas and liquid in the contaminant, while the solid state is filtered out, The contaminants in the solid state accumulate on the lower side of the tubular body 502 to prevent clogging.

As such, since the filtration filter 502a is provided inside the tubular body 502, the tubular body 502 may be appropriately withdrawn so that the filtration filter 502a can be pulled out for periodic cleaning of the filtration filter 502a. The location may also be provided with a drawer door 502b.

By using the exhaust manifold 500 as described above, since pollutants can be smoothly discharged without stagnation inside, there are various advantages such as preventing production interruption due to exhaust error and improving productivity. You can get it.

In the foregoing description, it should be understood that those skilled in the art can make modifications and changes to the present invention without changing the gist of the present invention as merely illustrative of a preferred embodiment of the present invention.

According to the present invention, since various pollutants generated during etching of the circulation belt can be exhausted and removed more smoothly, contamination of the exhaust manifold is prevented while preventing wafer defects caused by the pollutants, thereby improving production yield. Since the material can be discharged more smoothly without stagnation inside, a great effect can be achieved, such as preventing production interruption and improving productivity.

Claims (7)

Belt conveyor type atmospheric pressure chemistry having a plenum plate that removes contaminants on the circulation belt 22 by spraying an etching gas to the circulation belt 22 to continuously deposit the wafer W. In vapor deposition equipment, The plenum plate 300 is, Belt conveyor type atmospheric pressure chemical vapor deposition equipment comprising an exhaust means for sucking and removing contaminants such as residual etching gas and by-products generated by etching. The method of claim 1, The exhaust means provided on the plenum plate 300, An exhaust port 302b provided on an upper surface of the injection area 302 provided with a plurality of injection holes 302a for injecting the etching gas to suck and remove the pollutants; 2, which is provided on the upper surface of the exhaust area portion 304 provided on the side through which the circulation belt 22 passing through the injection area portion 302 passes therethrough to secondarily inhale and remove the contaminants. Belt conveyor type atmospheric pressure chemical vapor deposition equipment comprising a car exhaust port (304b). The method of claim 2, Belt exhaust type atmospheric pressure chemical vapor deposition equipment, characterized in that the exhaust port (302b) and the secondary exhaust port (304b) is provided to be connected to the main exhaust pipe side. The branch exhaust pipes connected to the exhaust port 40 of the plenum plate 30 which injects the etching gas to the circulation belt 22 for transporting the wafer W and the main exhaust pipe in the factory are intermediate. In the belt conveyor type atmospheric pressure chemical vapor deposition equipment having an exhaust manifold to be connected, The exhaust manifold 500, The side where the inlet side connection ports 504 to which the branch exhaust pipes are connected is located at a high position, and the side where the outlet side connection port 506 to which the main exhaust pipe is connected is provided to be inclined to be positioned at a low position. Belt conveyor type atmospheric pressure chemical vapor deposition equipment comprising a tubular body (502). The method of claim 4, wherein The inlet connection ports 504, Belt conveyor type atmospheric pressure chemical vapor deposition equipment, characterized in that formed to be inclined in the same inclination direction of the tubular body (502). The method of claim 4, wherein The exhaust manifold 500, Belt conveyor type atmospheric chemical vapor deposition equipment further comprises a filtration filter (502a) which is provided inside the tubular body (502) to filter the contaminants introduced. The method of claim 6, The exhaust manifold 500, Belt conveyor type atmospheric pressure chemical vapor deposition equipment further comprises a withdrawal door (502b) to be provided on the tubular body (502) for withdrawal of the filtration filter (502a).

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