KR100765997B1 - In-line sputtering system - Google Patents

Abstract

The present invention discloses an inline sputtering system. The system of the present invention comprises an entry side load lock machine having an entry side load lock chamber for loading a substrate, a buffer heating machine having a buffer heating chamber capable of heating the substrate, and an entry side capable of heating the substrate while waiting An entry-side transfer machine having a transfer chamber, a first sputtering machine having a first coating chamber capable of coating a first thin film on the substrate, a heating machine having a heating chamber capable of heating the substrate, and a first of the substrate A second sputtering machine having a second coating chamber capable of coating a second thin film on the thin film, a firing machine having a firing chamber capable of firing the substrate, and a discharge side transfer chamber capable of cooling the substrate while cooling the substrate. A discharge cooling machine, a buffer cooling machine having a buffer cooling chamber capable of cooling the substrate, and a substrate for unloading The outlet consists of a discharge-side load-lock machine having a load-lock chamber. The chambers of each of the machines are connected inline. According to the present invention, it is possible to ensure a continuous and stable flow of the substrate to improve the productivity, to improve the quality, such as uniformity, roughness, dispersion of the thin film, it is possible to reduce the defects. In addition, the entire chamber can be fully opened and closed, simplifying maintenance and improving the operability and reliability of the system.

Description

In-Line Sputtering System {IN-LINE SPUTTERING SYSTEM}

1 is a plan view schematically showing the overall configuration of an inline sputtering system according to the present invention,

2 is a block diagram showing chambers of an inline sputtering system according to the present invention;

Figure 3 is a cross-sectional view showing the configuration of the first sputtering machine in the in-line sputtering system according to the present invention,

4 is a longitudinal sectional view showing a configuration of a first sputtering machine according to the present invention;

5 is a cross-sectional view showing a state in which the first coating chamber of the first sputtering machine according to the present invention in a view similar to FIG. 2;

6 is a cross-sectional view showing a heating machine in the in-line sputtering system according to the present invention,

Figure 7 is a partially enlarged cross-sectional view showing a heating apparatus of the heating machine according to the present invention,

8 is a longitudinal sectional view showing a partially enlarged heating apparatus of the heating machine according to the present invention;

9 is a front view partially showing the cooling jacket of the buffer cooling machine according to the present invention,

Figure 10 is a perspective view showing a partially cut cooling jacket of the buffer cooling machine in the in-line sputtering system according to the present invention.

♣ Explanation of symbols for the main parts of the drawing ♣

100: entry side load lock machine 102: entry side load lock chamber

200: buffer heating machine 202: buffer heating chamber

300: entry side transfer machine 302: entry side transfer chamber

400: first sputtering machine 402: first coating chamber

500: heating machine 502: heating chamber

600: second sputtering machine 602: second coating chamber

700: firing machine 702: firing chamber

800: discharge side transfer machine 802: discharge side transfer chamber

900: buffer cooling machine 902: buffer cooling chamber

1000: discharge side load lock machine 1002: discharge side load lock chamber

1100-1112: 1st-7th gate valve 1200: conveying apparatus

The present invention relates to an in-line sputtering system, and more particularly, to an in-line sputtering system capable of uniformly and efficiently coating a plurality of layers of thin films on the surface of a substrate.

As is well known, sputtering techniques using plasma are commonly used for coating thin films in the manufacturing fields of semiconductors, liquid crystal displays (LCDs), plasma display panels (PDPs), and projection TVs. It is divided into batch type, inter-back and in-line method according to the loading and unloading method of the substrate.

Batch sputtering directly loads a substrate into a coating chamber to coat a thin film on the surface of the substrate. Interbag sputtering includes a subchamber for loading and unloading the substrate in the coating chamber, and coating the thin film on the surface of the substrate while loading and unloading the substrate by the subchamber. In-line sputtering arranges the loading chamber and the unloading chamber inline in the coating chamber, loads the substrate by the loading chamber, and then performs coating of a thin film on the surface of the substrate, and then loads the substrate by the unloading chamber. On the other hand, in the field of manufacturing such as LCD and PDP, in-line sputtering is used to continuously coat an ITO (Indium Tin Oxide) film with a silica (SiO ₂ ) film and a conductive film on the surface of the glass substrate.

Looking at an example of such a prior art inline sputtering system, the inline sputtering system includes an entry side load lock machine having an entry side load lock chamber for switching between atmospheric pressure and vacuum state for loading a glass substrate; A first sputtering machine having a buffer heating chamber having a buffer heating chamber for heating the glass substrate, a first coating chamber for coating the silica film on the surface of the glass substrate, and a glass substrate coated with the silica film. A heating machine having a heating chamber for heating, a second sputtering machine having a second coating chamber for coating an ITO film on the surface of the glass substrate, a buffer cooling machine having a buffer cooling chamber for cooling the glass substrate, and Exit locklock chamber to switch between atmospheric pressure and vacuum for unloading glass substrates The discharge side loadlock machine with the load-lock chamber is arranged inline. And, the chambers of each of the machines is configured to be opened and closed by a door rotated about the hinge.

However, in the in-line sputtering system of the prior art, the change of the vacuum state is rapidly made between the buffer heating chamber and the first coating chamber, and the second coating chamber and the buffer cooling chamber, resulting in the deterioration of the glass substrate and the thin film. There is a problem that the uniformity, roughness and dispersion of the silica film and the ITO film are reduced. In addition, it is difficult to continuously maintain the flow of the glass substrate in the first and the second coating chamber is accompanied with a disadvantage that the productivity is greatly reduced. In addition, the glass substrate having passed through the second coating chamber is cooled in the buffer cooling chamber, causing thermal contraction, causing defects of the silica film and the ITO film.

On the other hand, since each chamber of the machine is configured to open and close by a door of a separate structure, there is a disadvantage that a lot of time and manpower is required for replacement of parts such as targets and maintenance of the chambers.

 The present invention has been made to solve the various problems of the prior art as described above, an object of the present invention is to provide an in-line sputtering system that can improve the productivity by ensuring a continuous and stable flow of the substrate .

Another object of the present invention is to provide an in-line sputtering system that can improve the quality, such as uniformity, roughness, dispersion of the thin film.

Still another object of the present invention is to provide an inline sputtering system capable of greatly reducing defects by preventing deterioration and thermal contraction of a substrate.

Another object of the present invention is to open and close the entire chamber in a fully open door method to facilitate the replacement of parts and maintenance of the chamber, an inline sputtering system that can greatly improve the operation and reliability of the system To provide.

Features of the present invention for achieving this object include: an entry side load lock machine having an entry side load lock chamber capable of carrying out a switch between atmospheric pressure and vacuum for loading a substrate; A buffer heating machine having a buffer heating chamber capable of heating the substrate; An entry side transfer machine having an entry side transfer chamber capable of heating the substrate while waiting; A first sputtering machine having a first coating chamber capable of coating the first thin film on the substrate; A heating machine having a heating chamber capable of heating the substrate; A second sputtering machine having a second coating chamber capable of coating the second thin film on the first thin film of the substrate; A firing machine having a firing chamber capable of firing the substrate; A discharge side transfer machine having a discharge side transfer chamber capable of slow cooling the substrate while waiting; A buffer cooling machine having a buffer cooling chamber capable of cooling the substrate; A discharge side load lock machine having an discharge side load lock chamber capable of performing a switch between atmospheric pressure and vacuum for unloading of the substrate, wherein the chambers of each of the machines are in an inline sputtering system connected inline.

Hereinafter, a preferred embodiment of the inline sputtering system according to the present invention will be described in detail with reference to the accompanying drawings.

The in-line sputtering system of the present invention is installed after a well-known clean room and continuously coated on the surface of a substrate, for example, a glass substrate, by coating an ITO film with a silica film and a second film conductive film with an insulating film of the first thin film. A plurality of glass substrates are vertically mounted on both sides of the tray and sequentially loaded and unloaded by a conveyor system.

First, referring to FIG. 1 and FIG. 2, the inline sputtering system of the present invention includes an entry side load lock machine 100 having an entry side load lock chamber 102 and a buffer heating machine 200 having a buffer heating chamber 202. ), A heating machine having an entry-side transfer machine 300 having an entry transfer chamber 302, a first sputtering machine 400 having a first coating chamber 402, and a heating chamber 502. 500), a second sputtering machine 600 with a second coated chamber 602, a firing machine 700 with a firing chamber 600, an exit side transfer machine with an exit transfer chamber 802. (Exit Transfer Macine: 800), the buffer cooling machine 900 having the buffer cooling chamber 902 and the discharge side load lock machine 1000 having the discharge side load lock chamber are arranged inline.

Meanwhile, the chambers 102, 202, 302, 402, 502, 602, 702, 802, 902, 1002 of the machines 100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, respectively, First chamber bodies 104, 204, 304, 404, 504, 604, 704, 804, 904, 1004 and second chamber bodies 106, 206, 306, 406, 506, 606, 706, 806 of similar construction , 906, 1006) is configured to open and close at the same time in a full front opening door form (Full Front Opening Door Form). Accordingly, the configuration and operation of each of the machines 100, 200, 300, 400, 500, 600, 700, 800, 900, and 1000 may be similar to those of the first sputtering machine 300 and the heating machine 500, which will be described later. Note that a detailed description thereof will be omitted.

In addition, each of the machines 100, 200, 300, 400, 500, 600, 700, 800, 900, 1000 has a chamber 102, 202, 302, 402, 502, 602, 702, 802, 902, 1002. Vacuum pumps 110, 210, 310, 410, 510, 610, 710, 810, 910, and 1010 are provided to create a vacuum. In addition, vent valves 112 and 1012 are provided in each of the inlet side and the outlet side load lock machines 100 and 1000 for exhausting from the chambers 102 and 1002.

3 to 5 show a first sputtering machine of the inline sputtering system according to the invention. 1, 3 to 5, the first sputtering machine 400 is the first chamber body 404 and the second chamber are compatible with each other to separate the first coating chamber 402 from side to side A body 406 is provided. The first coating chamber 402 is vertically open to provide a coating space of the glass substrate 1 on the front surface of the first chamber body 404 in contact with the second chamber body 404. On each of the inner surfaces of the first and second chamber bodies 404 and 406, a silica cathode 430 composed of a silica target and an electrode is provided for coating the silica film with the first thin film. In the drawing, the silica cathode 430 shows three vertically arranged diagonally on the inner surface of each of the first and second chamber bodies 404 and 406, but the number of the silica cathode 430 is illustrative. And position can be changed. Shield assemblies 432 are provided on the inner surfaces of the first and second chamber bodies 404 and 406 where the silica cathode 430 is not installed, so as to be compatible with the silica cathode 430.

On the other hand, as shown in Figure 1, the second coating chamber 602 of the second sputtering machine 600 is provided with an ITO cathode 630 consisting of an ITO target and an electrode for coating the ITO film with a second thin film It is.

6 to 8 show a heating machine of the inline sputtering system according to the invention. 1 and 5, the heating machine 500 includes a first chamber body 504 and a second chamber body 506 that are compatible with each other to separate the heating chamber 502 from side to side. The heating chamber 502 is vertically open to the front surface of the first chamber body 504 in contact with the second chamber body 504. The heating chamber 502 of the heating machine 500 is provided with a heating device 520 capable of heating the glass substrate 1 for uniform coating of a thin film such as a silica film or an ITO film.

As shown in detail in FIGS. 7 and 8, the heater 522 of the heating apparatus 520 is configured as a tube heater that is bent in a zigzag shape. The heating apparatus 520 is disposed in front of the heater 522 and the heating plate 524 and the heater 522 to uniformly radiate the heat of the heater 522 to the glass substrate 1 placed on the heating chamber 502. ) Is disposed behind the first reflector 526 to reflect the heat of the heater 522 forward, the heat sink 528 disposed behind the first reflector 526 to block heat transfer, and the heat sink 528 The second reflector 530 is disposed at a rear side of the heat sink to reflect heat radiated from the heat sink 528 to the front. The heater 522 is fitted into and fixed in the grooves 534 of the plurality of holders 532 attached to the front surface of the first reflecting plate 526, and the second reflecting plate 530 is assembled to the shield 536. The shield 536 is fixed at predetermined intervals from the wall surfaces of the first and second chamber bodies 504 and 506.

On the other hand, the buffer heating chamber 202 of the buffer heating machine 200, the entry side transfer chamber 302 of the entry side transfer machine 300, the first coating chamber 402 of the first sputtering machine 400, the second Heating of the heating machine 500 is provided in each of the second coating chamber 602 of the sputtering machine 600, the firing chamber 702 of the firing machine 700, and the discharge side transfer chamber 802 of the discharge side transfer machine 800. Heating devices 220, 320, 420, 620, 720, and 820 of similar construction to the device 520 are installed. The configuration and operation of the heating apparatus 220, 320, 420, 620, 720, 820 refer to the configuration and operation of the heating apparatus 520, and a detailed description thereof will be omitted.

Referring back to FIG. 1, the inline sputtering system of the present invention is a first gate valve as an opening / closing means for opening and closing the entry side load lock chamber 102 of the entry side load lock machine 100 for loading the glass substrate 1. 1100, a second gate valve 1102 that opens and closes between the entry side load lock chamber 102 of the entry side load lock machine 100 and the buffer heating chamber 202 of the buffer heating machine 200, and the buffer A third gate valve 1104 which opens and closes between the buffer heating chamber 202 of the heating machine 200 and the entry-side transfer chamber 302 of the entry-side transfer machine 300, and the first sputtering machine 400. A fourth gate valve 1106 which opens and closes between the first coating chamber 402 and the heating chamber 502 of the heating machine 500, the discharge side transfer chamber 802 and the buffer cooling machine of the discharge side transfer machine 800. A fifth gate valve 1108 which opens and closes between the buffer cooling chamber 902 of 900 and the buffer cooling Loading of the glass substrate 1 and the sixth gate valve 1110 to open and close the buffer cooling chamber 902 of the ring machine 900 and the discharge side load lock chamber 1002 of the discharge side load lock machine 1000 are performed. And a seventh gate valve 1112 for opening and closing the discharge side load lock chamber 1002 of the discharge side load lock machine 1000.

9 and 10 show a cooling jacket of a buffer cooling machine of the inline sputtering system according to the invention. 8 and 9, a cooling jacket 920 is fixed to the first and second chamber bodies 904 and 906 of the buffer cooling machine 900, respectively. The cooling jacket 920 includes a first plate 922 and a second plate 924 having the same configuration, and the first plate 922 and the second plate 924 are joined to correspond to each other to form a zigzag coolant passage. Form 926. One side of the cooling water passage 926 of the cooling jacket 920 is connected to the cooling water introduction pipe 930 for introducing the cooling water, and the other side is connected to the cooling water discharge pipe 932 for discharging the cooling water. The coolant inlet 930 and the coolant outlet 932 are connected to well-known coolant pumps for introduction and discharge of the coolant.                     

On the other hand, after the high temperature glass substrate 1 is loaded into the buffer cooling chamber 902 of the buffer cooling machine 900, the coolant is supplied to the coolant passage 926 through the coolant introduction pipe 930 by driving the coolant pump. Supply. Cooling water flows zigzag from the cooling water introduction pipe 930 along the cooling water passage 926 and is discharged through the cooling water discharge pipe 932. Due to the flow of the cooling water, heat exchange occurs on the surfaces of the first plate 922 and the second plate 924 to cool the buffer cooling chamber 902 and the glass substrate 1. The cooling jacket 920 has a large heat transfer area due to the first plate 922 and the second plate 924. In addition, the loss due to bending resistance and pipe friction on the flow of the cooling water at the bending point of the cooling water passage 926 is reduced, and the flow of the cooling water is maintained smoothly. Therefore, the space occupied by the cooling jacket 920 in the buffer cooling chamber 902 can be greatly reduced, and the cooling efficiency in the buffer cooling chamber 902 can be greatly increased.

1, 3 to 6 and 9, the in-line sputtering system of the present invention is a chamber (each of the machines 100, 200, 300, 400, 500, 600, 700, 800, 900, 1000) First chamber body 104, 204, 304, 404, 504, 604, 704, 804, 904, 1004 to simultaneously open and close 102, 202, 302, 402, 502, 602, 702, 802, 902, 1002 A conveying device 1200 for conveying the second chamber bodies 106, 206, 306, 406, 506, 606, 706, 806, 906, 1006. The conveying apparatus 1200 includes a carrier 1202 for carrying and carrying the second chamber bodies 106, 206, 306, 406, 506, 606, 706, 806, 906, and 1006. A number of wheels 1204 are mounted. First chamber bodies 104, 204, 304, 404, 504, 604, 704, 804, 904, 1004 of each of the machines 100, 200, 300, 400, 500, 600, 700, 800, 900, 1000 Are fixed to the frame 1206.

Meanwhile, the chambers 102, 202, 302, 402, 502, 602, 702, 802, 902, 1002 of the machines 100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, respectively, When maintaining or replacing parts, first decommission the vacuum of the chambers 102, 202, 302, 402, 502, 602, 702, 802, 902, 1002, and the first chamber body 104, 204, 304, Second chamber bodies 106, 206, 306, 406, 506, 606, 706, mounted on the carrier 1202 of the conveying device 1200 for 404, 504, 604, 704, 804, 904, 1004 806, 906, 1006 can be moved as shown in FIG. 5 to open all of the chambers 102, 202, 302, 402, 502, 602, 702, 802, 902, 1002 simultaneously. Therefore, maintenance and replacement of parts of the chambers 102, 202, 302, 402, 502, 602, 702, 802, 902, 1002 can be easily performed, and sufficient working space can be secured to ensure workability. Can be improved.

The following describes the operation of the inline sputtering system according to the present invention having such a configuration.

1 and 2, first, the pressure of the entry side load lock chamber 102 is converted from vacuum to atmospheric pressure by the vent valve 112 of the entry side load lock machine 100. Then, the first gate valve 1100 is opened, and the glass substrate 1 is loaded into the entry-side load lock chamber 102 converted to atmospheric pressure. At this time, the vacuum of the entry-side load lock chamber 102 is maintained at about 5 x 10 ^-5 Torr. When loading of the glass substrate 1 to the entry-side load lock chamber 102 is completed, the first gate valve 1100 is closed and the pressure of the entry-side load lock chamber 102 is maintained at atmospheric pressure by the vacuum pump 110. Switch back to vacuum.

Next, the second gate valve 1102 is opened between the entry side load lock machine 100 and the buffer heating machine 200, and the buffer heating is performed from the entry side load lock chamber 102 of the entry side load lock machine 100. After the glass substrate 1 is loaded into the buffer heating chamber 202 of the machine 200, the glass substrate 1 is heated by the heating apparatus 220. The buffer heating chamber 202 maintains the vacuum when converting the pressure of the entry side load lock chamber 102 from vacuum to atmospheric pressure in order to load the glass substrate 1 into the entry side load lock chamber 102. Therefore, according to the vacuum holding of the buffer heating chamber 202, it is possible to stably maintain the flow and working conditions in the downstream process, and to prevent the deterioration of the glass substrate 1 and the like. In the buffer heating chamber 202, the glass substrate 1 is preheated before the coating of the silica film, thereby ensuring reliability in the coating of the silica film in the downstream first coating chamber 402. The temperature of the buffer heating chamber 202 is maintained at about 250 to 350 ° C, preferably at about 300 ° C.

Subsequently, the third gate valve 1104 between the buffer heating machine 200 and the entry-side transfer machine 300 is opened, and the entry-side transfer machine 300 is opened from the buffer heating chamber 202 of the buffer heating machine 200. The glass substrate 1 is loaded into the transfer chamber 302 of the entrance side and heated by the heating device 320 while waiting. In the entry-side transfer chamber 302, the temperature of the glass substrate 1 heated in the buffer heating chamber 202 is continuously preserved. The pressure of the entry-side transfer chamber 302 is maintained at about 1.5 × 10 ⁻² to 1.5 × 10 ⁻³ Torr. When the pressure of the entry-side transfer chamber 302 is maintained at less than 1.5 × 10 ⁻² Torr, the moisture is present in the glass substrate 1, and the coated silica film is peeled off from the glass substrate 1 and is 1.5 × 10 ^−3. If it exceeds the tor, the silica film is cured and etching becomes difficult. Thus, by waiting the glass substrate 1 loaded in the downstream first coating chamber 402 by the entry-side transfer chamber 302, the continuous and stable of the glass substrate 1 by the first coating chamber 402 Coating is possible. That is, since the entry-side transfer chamber 302 exists as a buffer space between the upstream buffer heating chamber 202 and the downstream first coating chamber 402, the continuity of the process can be ensured.

1, 3 and 4, the glass substrate 1 is placed from the entry side transfer chamber 302 of the entry side transfer machine 300 to the first coating chamber 402 of the first coating machine 400. The surface of the glass substrate 1 loaded on the first coating chamber 402 is coated with a silica film by sputtering. In the first coating chamber 402 of the first coating machine 400, argon gas (Ar Gas) is added to the inert gas while maintaining a pressure of about 2 × 10 ⁻² Torr during the process of forming the vacuum by the vacuum pump 410. Inject. The silica film is performed by high frequency sputtering to apply a high frequency of 13.56 megahertz (MHz) to the silica cathode 430 having a silica target. Plasma formed by glow discharge of the silica cathode 430 ionizes the inert gas, the ions of the inert gas release atoms from the silica target, and the atoms of the silica target are the surface of the glass substrate 1 Is coated on. At this time, the pressure of the first coating chamber 402 is maintained in a high vacuum state of 8 × 10 ^-6 Torr or more. The temperature of the first coating chamber 402 is maintained at about 300 to 400 ℃ for uniform coating of the silica film to maintain the temperature of the glass substrate 1 to about 280 to 350 ℃. In coating of the silica film, the maximum temperature of the first coating chamber 402 may be maintained at about 450 ° C.

1 and 6, when the coating of the silica film is completed, the fourth gate valve 1106 between the first sputtering machine 400 and the heating machine 500 is opened, and the first sputtering machine 400 is opened. 1 The glass substrate 1 is loaded from the coating chamber 402 into the heating chamber 502 of the heating machine 500 and then heated by the heating apparatus 520. The temperature of the heating chamber 502 is maintained at about 400 to 500 ° C. to maintain the temperature of the glass substrate 1 at about 250 to 450 ° C., and the temperature of the preferred glass substrate 1 is about 300 ° C. The heating chamber 502 may pre-heat the glass substrate 1 before coating the ITO film, thereby ensuring reliability in the coating of the ITO film in the downstream second coating chamber 602.

Referring again to FIGS. 1 and 2, the glass substrate 1 is loaded from the heating chamber 502 of the heating machine 500 to the second coating chamber 602 of the second coating machine 600, and the second coating is performed. The ITO film is coated on the surface of the glass substrate 1 loaded on the chamber 602, that is, on the silica film. At this time, the temperature of the second coating chamber 602 is maintained at about 400 ~ 500 ℃ like the heating chamber 502 for uniform coating of the ITO film and the pressure is maintained in a high vacuum state of 8 × 10 ^-6 Torr or more.

Meanwhile, the second coating chamber 602 of the second coating machine 600 is injected with argon gas and oxygen into an inert gas while maintaining a pressure of about 2 × 10 ⁻² Torr during the process of forming the vacuum. The ITO film is formed by direct current sputtering to apply a direct current high voltage to the ITO cathode 630 having the ITO target. The plasma formed by the glow discharge of the ITO cathode 630 ionizes the inert gas, the ions of the inert gas release atoms from the ITO target, and the atoms of the ITO target are coated on the silica film of the glass substrate 1. .

In addition, in the second coating chamber 602 of the first coating machine 600, the glass substrate 1 on which the ITO film is coated is loaded from the second coating chamber 602 into the firing chamber 702 of the baking machine 700. In the firing chamber 702, the firing of heating the glass substrate 1 to a high temperature by the heating apparatus 720 is performed. Firing in the firing chamber 702 is heated to a temperature at least 10 ° C. higher than the temperature of the glass substrate 1 held in the second upstream coating chamber 602. For example, when the temperature of the second coating chamber 602 is maintained at 300 ° C. to coat the ITO membrane, the temperature of the firing chamber 702 is maintained at 310 ° C. or higher.

Subsequently, when the firing of the glass substrate 1 in the firing chamber 702 of the firing machine 700 is completed, the firing side transfer chamber of the discharge side transfer machine 800 from the firing chamber 702 of the firing machine 700. The glass substrate 1 is loaded and waited at 802, and the glass substrate 1 waiting at the discharge side transfer chamber 802 is slowly cooled while being heated by the heating apparatus 820.

Thus, the stress which exists in the glass substrate 1 by repetitive heating, ie, heat processing by baking in the baking chamber 702 and slow cooling in the discharge side transfer chamber 802, ie, annealing, is heat-treated. It can be removed, and the crystal grains of the silica film and the ITO film can be recovered and recrystallized to improve the quality, such as uniformity, roughness and dispersion of the thin film. In the discharge-side transfer chamber 802, the glass substrate 1 is heated and gradually cooled, thereby suppressing deterioration and heat shrinkage that may occur due to a sudden temperature change of the glass substrate 1 loaded in a subsequent process. . The discharge side transfer chamber 802 exists as a buffer space between the upstream firing chamber 702 and the downstream buffer cooling chamber 902 while maintaining the continuity of the process and simultaneously moving the glass substrate 1 smoothly and quickly. Assist in doing so.

1 and 9, the fifth gate valve 1108 between the discharge side transfer machine 800 and the buffer cooling machine 900 is opened, and the discharge side transfer chamber 802 of the discharge side transfer machine 800 is opened. The glass substrate 1 is loaded into the buffer cooling chamber 902 of the buffer cooling machine 900, and the glass substrate 1 is cooled by the cooling jacket 920 in the buffer cooling chamber 902.

Next, when the cooling of the glass substrate 1 in the buffer cooling chamber 902 of the buffer cooling machine 900 is completed, the sixth gate valve between the buffer cooling machine 900 and the discharge side load lock machine 1000 ( 1110, the glass substrate 1 is loaded from the buffer cooling chamber 902 of the buffer cooling machine 900 into the discharge side load lock chamber 1002 of the discharge side load lock machine 1000, and then the sixth gate valve. Close 1110. Finally, the vent valve 1020 of the discharge side load lock machine 1110 is opened to switch the pressure of the discharge side load lock chamber 1002 from vacuum to atmospheric pressure, and then the seventh gate valve 1112 is opened, and the discharge side rod is opened. The glass substrate 1 is unloaded from the lock chamber 1002. At this time, the buffer cooling chamber 902 of the buffer cooling machine 900 is maintained in a vacuum state to continue the process flow upstream.

The above embodiments are merely illustrative of preferred embodiments of the present invention, and the scope of the present invention is not limited to the described embodiments, and various modifications may be made by those skilled in the art within the spirit and scope of the present invention. Modifications, variations, or substitutions may be made, and such embodiments are to be understood as being within the scope of the present invention.

As described above, according to the in-line sputtering system according to the present invention, it is possible to secure a continuous and stable flow of the substrate to improve the productivity, to improve the quality, such as uniformity, roughness, dispersion of the thin film, substrate It is possible to greatly reduce defects by preventing deterioration and thermal contraction of In addition, the entire chambers can be fully opened and closed in the front open door method, which enables easy replacement of parts and maintenance of the chambers, and can greatly improve the operation and reliability of the system.

Claims (7)

An entry side load lock machine having an entry side load lock chamber capable of performing a transition between atmospheric pressure and vacuum for loading the substrate; A buffer heating machine having a buffer heating chamber capable of heating the substrate; An entry side transfer machine having an entry side transfer chamber capable of heating the substrate while waiting; A first sputtering machine having a first coating chamber capable of coating the first thin film on the substrate; A heating machine having a heating chamber capable of heating the substrate; A second sputtering machine having a second coating chamber capable of coating the second thin film on the first thin film of the substrate; A firing machine having a firing chamber capable of firing the substrate; A discharge side transfer machine having a discharge side transfer chamber capable of slow cooling the substrate while waiting; A buffer cooling machine having a buffer cooling chamber capable of cooling the substrate; A discharge side load lock machine having an discharge side load lock chamber capable of switching between atmospheric pressure and vacuum for unloading the substrate, The chambers of each of the machines are connected inline. The in-line sputtering system of claim 1, wherein the chambers of each of the machines are configured to be fully opened and closed simultaneously by first chamber bodies and second chamber bodies that are compatible with each other so as to be able to separate left and right. 3. The apparatus of claim 2, further comprising a conveying means for moving said second chamber bodies relative to the first chamber bodies of each of said machines, said conveying means comprising a carrier for mounting and moving said second chamber bodies. Inline sputtering system. According to claim 1 or 2, wherein the entry-side load lock chamber, the buffer heating chamber, the entry-side transfer chamber, the first coating chamber, the heating chamber, the second coating chamber, the firing chamber, the discharge side transfer chamber, respectively, In-line sputtering system comprising a heating means capable of heating. The inline of claim 4, wherein the first coating chamber is provided with a silica cathode for coating a silica film with a first thin film, and the second coating chamber is provided with an ITO cathode for coating an ITO film with a second thin film. Sputtering machine. The in-line sputtering system of claim 1, wherein the buffer cooling chamber is provided with a cooling jacket for cooling the substrate. The in-line sputtering system of claim 1 or 2, further comprising a plurality of opening and closing means for opening and closing respective chambers along a transfer direction of the substrate.

Images