KR100752375B1 - Donor substrate for Laser Induced Thermal Imaging and method of fabricating thereof, and method of fabricating OLED using the same - Google Patents

Abstract

The present invention relates to a laser transfer donor substrate, a method of manufacturing the same, and a method of manufacturing an organic light emitting device using the same, including a base layer; A photo-thermal conversion layer on the base layer; A buffer layer disposed on the photo-thermal conversion layer over the entire substrate layer and composed of parylene; And a transfer layer on the buffer layer. It provides a donor substrate for laser transfer comprising a.

In addition, providing a base layer; Forming a photo-thermal conversion layer on the substrate layer; Forming a buffer layer made of parylene on the photo-thermal conversion layer; And forming a transfer layer on the buffer layer. It provides a method of manufacturing a laser transfer donor substrate comprising a.

In addition, providing a substrate on which the pixel electrode is formed; A laser transfer donor manufactured by sequentially stacking a substrate layer, a photo-thermal conversion layer on the substrate layer, a buffer layer made of parylene on the photo-thermal conversion layer, and a transfer layer, which is an organic layer, on the buffer layer. Disposing substrates spaced apart from each other such that the transfer layer faces the substrate; Irradiating a laser to a predetermined region of the donor substrate to form an organic layer pattern on the pixel electrode; It provides a method for manufacturing an organic electroluminescent device comprising a.

Donor substrate, buffer layer, organic light emitting device, laser thermal transfer method

Description

Donor substrate for laser transfer, a method of manufacturing the same and a method of manufacturing an organic light emitting device using the same {Don substrate for Laser Induced Thermal Imaging and method of fabricating etc, and method of fabricating OLED using the same}

1A and 1B are cross-sectional views illustrating a method of manufacturing an organic light emitting display device by a conventional laser thermal transfer method.

2 is a diagram showing the structure of a donor substrate for laser transfer according to a first embodiment of the present invention;

3A to 3C are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to a second embodiment of the present invention.

-Brief description of drawing symbols-

10: donor substrate 11: base layer

12: photo-thermal conversion layer 13: buffer layer

14: transfer layer 400: substrate

401: substrate 402: first electrode

404: organic film pattern

The present invention relates to a laser transfer donor substrate, a method of manufacturing the same, and a method of manufacturing an organic light emitting device using the same, and more particularly, a laser transfer donor substrate, a method of manufacturing the same, and an organic material using the same. A method for manufacturing an electroluminescent device.

The organic light emitting device is a self-luminous type in which electrons and holes are recombined in the light emitting layer to generate light by applying a voltage to the organic layer including the organic light emitting layer. It can be simplified, and the response speed is the same as the CRT, and it is advantageous in terms of power consumption. Such an organic light emitting display device has been spotlighted as a next generation display because it can express high quality video.

In general, the organic light emitting device is composed of several layers such as a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer between the anode and the cathode, the three primary colors of R, G and B in the organic light emitting device The full color can be realized by patterning the light emitting layer.

The multilayer organic film may be formed using a vacuum deposition method or a conventional optical etching method using a shadow mask, but in the case of the vacuum deposition method, it is difficult to form the organic film in a fine pattern, and thus it is difficult to realize a full-color display. In the case of each method, there is a problem in that light emission characteristics such as lifetime and efficiency are deteriorated due to damage of the organic film by the developer or etching solution.

Accordingly, a method of patterning an organic film using laser induced thermal imaging (LITI) has been introduced as a method to solve this problem.

The laser thermal transfer method is a method in which light is emitted from a light source and absorbed by a light-to-heat conversion layer of a donor substrate to convert light into thermal energy, and the organic material formed on the transfer layer is transferred to a substrate by the converted thermal energy.

1A and 1B are cross-sectional views illustrating a method of manufacturing an organic light emitting display device by a conventional laser thermal transfer method.

Referring to FIG. 1A, first, a semiconductor layer 125, a gate insulating layer 120, a gate electrode 135, an interlayer insulating layer 130, and a source / layer may be formed on a buffer layer 110 of an insulating substrate 100 in a conventional manner. A thin film transistor having a drain electrode 145 is formed.

A planarization layer 150 is formed on the source / drain electrode over the entire surface of the substrate, and a via hole 165 for exposing the source or drain electrode 145 is formed.

The pixel electrode 160 is formed on the planarization layer so as to be connected to the source or drain electrode 145 through the via hole 165.

In this case, after forming the pixel defining layer 170 covering the pixel electrode 160 having the curved shape of the via hole 160, the pixel defining layer 170 is patterned to form the pixel electrode 160. An opening 195 is formed that exposes a portion.

As a result, a substrate having a thin film transistor and having the pixel electrode 160 formed thereon is manufactured.

Meanwhile, the donor substrate 200 for laser transfer is manufactured by sequentially stacking the base layer 201, the light-to-heat conversion layer 202, and the transfer layer 203.

Subsequently, lamination is performed by facing the pixel electrode of the substrate and the transfer layer of the transfer donor substrate, and then irradiate a laser to a predetermined portion of the base layer surface of the donor substrate.

Thereafter, as shown in FIG. 1B, the transfer layer is transferred from the donor substrate to the pixel electrode 160 of the substrate to form an organic layer pattern 204 ′. Subsequently, the organic light emitting diode may be manufactured by forming the upper electrode 180 on the entire surface of the substrate including the organic layer pattern 204 ′.

However, in the organic light emitting diode, since the edge portion of the pixel region is formed by the pixel defining layer 170, when the light emitting layer is formed by using laser transfer, the portion of the organic light emitting element is broken and the transfer layer is not generated. do. This is referred to as edge open failure (E), which is a particularly open area that receives laser energy and expands, ie, a layer such as a light-to-heat conversion layer 202 or a buffer layer (not shown). This is because the radius of curvature is large. That is, because the thickness of the expanded portion is thick.

Such a defect may reduce the efficiency and lifespan of the organic light emitting display device, and may cause a problem in that a full color cannot be realized.

Therefore, the present invention is to solve all the disadvantages and problems of the prior art as described above, the object of the present invention is for laser transfer for uniformly bonding the substrate and the donor substrate when forming the organic film pattern by the laser thermal transfer method Provide a donor substrate.

In addition, the present invention provides a method of manufacturing an organic light emitting device capable of preventing the occurrence of defects due to the edge opening of the organic film pattern.

In addition, the present invention provides a method for manufacturing an organic light emitting display device having improved efficiency and lifespan.

The present invention, in order to solve the above technical problem, the base layer; A photo-thermal conversion layer on the base layer; A buffer layer disposed on the photo-thermal conversion layer over the entire substrate layer and composed of parylene; And a transfer layer on the buffer layer. It provides a donor substrate for laser transfer comprising a.

In addition, the present invention, in order to solve the technical problem, providing a base layer; Forming a photo-thermal conversion layer on the substrate layer; Forming a buffer layer made of parylene on the photo-thermal conversion layer; And forming a transfer layer on the buffer layer. It provides a method of manufacturing a laser transfer donor substrate comprising a.

In addition, the present invention, in order to solve the above technical problem, providing a substrate on which a pixel electrode is formed; A laser transfer donor manufactured by sequentially stacking a base layer, a light-to-heat conversion layer on the base layer, a buffer layer composed of parylene on the light-to-heat conversion layer, and a transfer layer, which is an organic film, on the buffer layer. Disposing substrates spaced apart from each other such that the transfer layer faces the substrate; Irradiating a laser to a predetermined region of the donor substrate to form an organic layer pattern on the pixel electrode; It provides a method for manufacturing an organic electroluminescent device comprising a.

Details of the above objects and technical configurations and the effects thereof according to the present invention will be more clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention. In addition, in the drawings, the length, thickness, etc. of layers and regions may be exaggerated for convenience. Like numbers refer to like elements throughout.

2 is a diagram showing the structure of a donor substrate for laser transfer according to an embodiment of the present invention.

Referring to FIG. 2, the donor substrate 10 may be formed of a base layer 11, a light-to-heat conversion layer 12 disposed below the base layer 11, and a lower part of the light-to-heat conversion layer 12. A buffer layer 13 made of parylene and a transfer layer 14 positioned below the buffer layer 13 are stacked.

A gas generation layer (not shown) may be further included between the light-to-heat conversion layer 13 and the buffer layer 13.

The base layer 11 should have transparency in order to transmit light to the light-to-heat conversion layer 12, and may be made of a material having suitable optical properties and sufficient mechanical stability. For example, it may be made of glass or at least one polymeric material selected from the group consisting of polyester, polyacrylic, polyepoxy, polyethylene and polystyrene. More preferably, the base layer 11 may be polyethylene terephthalate. The base layer 11 serves as a support substrate, and complex multiple systems may be used.

The light-heat conversion layer 12 absorbs light in the infrared-visible light region and converts a portion of the light into heat. The light-heat conversion layer 12 should have a suitable optical density and is a light absorbing material for absorbing light. It is preferable to include. Here, the light-to-heat conversion layer 12 may be made of a metal film made of Al, Ag, oxides and sulfides thereof, or an organic film made of a polymer including carbon black, graphite, or an infrared dye. Here, the metal film may be formed by vacuum deposition, electron beam deposition, or sputtering, and the organic film is a conventional film coating method, and includes gravure, extrusion, spin, and knife coating. It can be formed by one of the methods.

When the gas generating layer (not shown) absorbs light or heat, it generates a decomposition reaction and releases nitrogen gas or hydrogen gas, thereby providing transcriptional energy, and tetranitrate tetranitrate (PETN) and trinitrotoluene ( TNT) and the like.

The buffer layer 13 is characterized in that composed of parylene (parylene). The parylene has excellent water resistance and chemical resistance, low dielectric constant, and excellent electrical insulation properties. In addition, a coating film having a uniform thickness is formed regardless of the shape of the base material, and the water vapor transmission rate (WVTR) is 0.2 g / m ² day, thereby providing excellent protective film characteristics. The parylene is formed by chemical vapor deposition (CVD) in a vacuum.

In addition, the buffer layer 13 not only serves to control the adhesive force with the transfer layer 14 so that the transfer pattern characteristics can be improved, the material formed under the transfer layer 14 as the transfer layer 14 It serves to prevent the diffusion of organic gas or foreign matter in the interior. In addition, the buffer layer 13 may prevent heat damage of the transfer layer by spraying heat transferred from the light-to-heat conversion layer 12 to the transfer layer. In addition, the buffer layer 13 prevents the gas generated in the light-heat conversion layer 12 from penetrating into the transfer layer 14.

It is preferable that the thickness of the said buffer layer 13 is 500-800 GPa. If the thickness of the buffer layer 13 is 500 kPa or less, parylene cannot be coated, and if the buffer layer 13 is 800 kPa or more, heat transfer is not easy.

The transfer layer 14 may be formed of one selected from the group consisting of an electroluminescent organic film, a hole injection organic film, a hole transporting organic film, a hole suppressing organic film, an electron transporting organic film, and an electron injection organic film, or may be a laminated film. Can be done.

The electroluminescent organic film may be formed of low molecular weight materials such as Alq3 (host) / DCJTB (fluorescent dopant), Alq3 (host) / DCM (fluorescent dopant), and CBP (host) / PtOEP (phosphorescent organometallic complex), which are red light emitting materials. PFO-based polymers and PPV-based polymers can be used, and low-molecular materials such as Alq3, Alq3 (host) / C545t (dopant), CBP (host) / IrPPY (phosphorescent organic complex), and green light emitting materials Polymeric materials such as polymers and PPV polymers can be used. In addition, low molecular weight materials such as DPVBi, Spiro-DPVBi, Spiro-6P, Distylbenzene (DSB), and Distriarylene (DSA), which are blue light emitting materials, and polymer materials such as PFO polymer and PPV polymer can be used. .

The hole injection organic layer facilitates hole injection into the organic light emitting layer of the organic light emitting diode and serves to increase the life of the device. The hole injection organic layer may be formed of an aryl amine compound, a starburst type amine, and the like. More specifically, 4,4 ', 4 "-tris (3-methylphenylphenylamino) triphenylamino (m-MTDATA), 1,3,5-tris [4- (3-methylphenylphenylamino) phenyl] benzene ( m-MTDATB) and phthalocyanine copper (CuPc).

The hole transporting organic layer not only transports holes easily to the organic light emitting layer, but also serves to increase luminous efficiency by suppressing electrons generated from the cathode from moving to the light emitting region. The hole transporting organic film may be formed of an arylene diamine derivative, a starburst compound, a biphenyldiamine derivative having a spiro group, a ladder compound, and the like. More specifically N, N-diphenyl-N, N'-bis (4-methylphenyl) -1,1'-biphenyl-4,4'-diamine (TPD) or 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (NPB).

The hole suppression organic layer has a role of preventing hole from moving to the electron injection layer because the hole mobility is greater than the electron mobility in the organic light emitting layer. Wherein the hole-inhibiting organic membrane is 2-biphenyl-4-yl-5- (4-t-butylphenyl) -1,3,4-oxydiazole (PBD), spiro-PBD and 3- (4'-tert -Butylphenyl) -4-phenyl-5- (4'-biphenyl) -1,2,4-triazole (TAZ).

The electron transporting organic film is laminated on the organic light emitting layer and is made of a metal compound that can accept electrons well, and has 8-hydroquinoline aluminum salt (Alq3) having excellent properties for stably transporting electrons supplied from the cathode electrode. Can be done.

The electron injection organic layer may be formed of one or more materials selected from the group consisting of 1,3,4-oxydiazole derivatives, 1,2,4-triazole derivatives, and LiF.

In addition, such an organic film may be formed by a method such as extrusion, spin, knife coating, vacuum deposition, or CVD.

3A to 3C are cross-sectional views illustrating a method of manufacturing an organic light emitting display device according to a second embodiment of the present invention.

As shown in FIG. 3A, an insulating substrate 301 is first provided, and a first electrode 302 is formed on the insulating substrate 301, and is positioned on the first electrode 302 to define a pixel portion. A substrate 300 having a pixel definition layer pattern 303 to be provided is provided. The substrate 300 may include a thin film transistor, an insulating film, and a capacitor between the insulating substrate 301 and the first electrode 302.

On the other hand, the substrate layer 401 is provided, on the substrate layer 401 on the light-heat conversion layer 402, on the light-heat conversion layer 402 on the buffer layer 403 and the buffer layer 403 The donor substrate 400 for laser transfer is manufactured by sequentially laminating the transfer layer 404 thereon.

In addition, a gas generation layer (not shown) may be further included between the light-to-heat conversion layer 402 and the buffer layer 403.

Here, the buffer layer 403 is made of parylene and is formed by chemical vapor deposition (CVD) in a vacuum state.

Subsequently, the pixel region of the substrate 300 and the transfer layer 404 of the donor substrate are disposed to face each other, and are then uniformly laminated. In this case, the donor substrate may be uniformly in close contact with the curved portion of the substrate 300 under the influence of the buffer layer 403 of the donor substrate.

The buffer layer 403 not only controls adhesion with the transfer layer 404 so that transfer pattern characteristics can be improved, but also in the material generated under the transfer layer 404 by the transfer layer 404. It serves to prevent the diffusion of organic gas or foreign substances. In addition, the buffer layer 403 may spray heat transferred from the photo-thermal conversion layer 402 to the transfer layer to prevent thermal damage of the transfer layer. In addition, the buffer layer 403 prevents gas generated in the light-to-heat conversion layer 402 from penetrating into the transfer layer 404.

Thereafter, as illustrated in FIG. 3B, a laser is irradiated onto the substrate layer 401 of the donor substrate which is in close contact with the substrate 300, and the transfer layer 404 is transferred to the substrate 300 to form an organic layer pattern 404. Form ').

The organic layer pattern 404 ′ may include at least an organic light emitting layer, and may further include one or more of a hole injection layer, a hole transport layer, a hole suppression layer, an electron injection layer, and an electron transport layer.

Subsequently, as shown in FIG. 3C, the second electrode 405 is formed on the organic layer pattern 404 ′ over the entire surface of the substrate 300, and then encapsulated to manufacture the organic light emitting diode.

Although the present invention has been shown and described with reference to the preferred embodiments as described above, it is not limited to the above embodiments and those skilled in the art without departing from the spirit of the present invention. Various changes and modifications will be possible.

In the present invention as described above, by forming a buffer layer made of parylene between the light-to-heat conversion layer and the transfer layer in the laser transfer donor substrate, the amount of energy absorbed by the light-to-heat conversion layer is increased, and the laser beam Preventing the transfer prevents damage to the substrate, prevents heat generated from the light-to-heat conversion layer from penetrating into the transfer layer, and prevents degradation of the transfer layer so that heat transferred to the transfer layer is well dispersed.

In addition, edge open defects can be reduced by increasing the adhesion between the transfer layer and the substrate in the stepped portion of the organic light emitting device by the pixel defining layer in the pixel region.

In addition, according to the present invention, the organic film pattern may be uniformly formed, thereby manufacturing an organic light emitting display device having a clean image quality.

Claims (15)

Base layer; A photo-thermal conversion layer on the base layer; A buffer layer disposed on the light-to-heat conversion layer over the entire substrate layer and composed of parylene; And A transfer layer on the buffer layer; Donor substrate for laser transfer comprising a. The method of claim 1, The donor substrate for laser transfer, characterized in that the thickness of the buffer layer is 500 ~ 800Å. The method of claim 1, The donor substrate for laser transfer further comprises a gas generating layer between the light-to-heat conversion layer and the buffer layer. The method of claim 1, The transfer layer is one monolayer film or two selected from the group consisting of an electroluminescent organic film, a hole injection organic film, a hole transporting organic film, a hole-inhibiting organic film, an electron transporting organic film and an electron injection organic film A donor substrate for laser transfer, comprising the multilayer film described above. Providing a base layer; Forming a photo-thermal conversion layer on the substrate layer; Forming a buffer layer made of parylene on the photo-thermal conversion layer; And Forming a transfer layer on the buffer layer; Method of manufacturing a donor substrate for laser transfer comprising a. The method of claim 5, The buffer layer is a method of manufacturing a donor substrate for laser transfer, characterized in that formed by chemical vapor deposition (CVD). The method of claim 5, The buffer layer is a method of manufacturing a laser transfer donor substrate, characterized in that the thickness of 500 ~ 800Å. The method of claim 5, The laser transfer donor substrate further comprises a gas generating layer between the light-to-heat conversion layer and the buffer layer. The method of claim 5, The transfer layer is one monolayer film or two selected from the group consisting of an electroluminescent organic film, a hole injection organic film, a hole transporting organic film, a hole-inhibiting organic film, an electron transporting organic film and an electron injection organic film A method of manufacturing a donor substrate for laser transfer, comprising the multilayer film described above. Providing a substrate on which a pixel electrode is formed; A laser transfer donor manufactured by sequentially stacking a substrate layer, a photo-thermal conversion layer on the substrate layer, a buffer layer made of parylene on the photo-thermal conversion layer, and a transfer layer, which is an organic layer, on the buffer layer. Disposing substrates spaced apart from each other such that the transfer layer faces the substrate; Irradiating a laser to a predetermined region of the donor substrate to form an organic layer pattern on the pixel electrode; Method for manufacturing an organic light emitting device comprising a. The method of claim 10, The buffer layer is a method of manufacturing an organic light emitting display device, characterized in that formed by chemical vapor deposition (CVD). The method of claim 10, The thickness of the buffer layer is a manufacturing method of an organic light emitting device, characterized in that 500 ~ 800Å. The method of claim 10, The laser transfer donor substrate further comprises a gas generating layer between the photo-thermal conversion layer and the buffer layer. The method of claim 10, The transfer layer is one monolayer film or two selected from the group consisting of an electroluminescent organic film, a hole injection organic film, a hole transporting organic film, a hole-inhibiting organic film, an electron transporting organic film and an electron injection organic film A method for manufacturing an organic light emitting display device, comprising the multilayer film described above. The method of claim 10, And forming a pixel defining layer at the sock end of the pixel electrode.

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