KR100730471B1 - Cmos image sensor and method for manufacturing the same - Google Patents

Abstract

A CMOS image sensor and a manufacturing method thereof are provided to prevent crosstalk and to improve sensitivity of the CMOS image sensor by using an insulating spacer and an air gap. Photo diodes(22a,22b) are arranged adjacent to each other on a silicon substrate(21). Inter-metal dielectrics(23,28) are formed on the silicon substrate. First light shield layers(24) of a metal material are formed in the inter-metal dielectrics between neighboring photo diodes. Second light shield layers are formed at both sides of the first light shield layer and in the inter-metal dielectric between the photo diodes. The second light shield layer includes trenches, an insulating spacer(27), and an air gap(29). The trenches are formed at both sides of the first light shield layer and in the inter-metal dielectric between the photo diodes. The insulating spacer is formed on both sidewalls of the trench. The air gap is provided on the trench by the insulating spacer and the inter-metal dielectric.

Description

CMOS image sensor and its manufacturing method {CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME}

1 is a view showing the structure of a CMOS image sensor according to the prior art,

2 illustrates a structure of a CMOS image sensor according to a first embodiment of the present invention;

3A to 3C are cross-sectional views illustrating a method of manufacturing a CMOS image sensor according to a first embodiment of the present invention;

4a and 4b are cross-sectional photographs of the air gap,

5 is a view illustrating a light source incident path of a CMOS image sensor according to a first embodiment of the present invention;

6 illustrates a structure of a CMOS image sensor according to a second embodiment of the present invention;

7A to 7F are cross-sectional views illustrating a method of manufacturing a CMOS image sensor according to a second embodiment of the present invention;

8 is a view illustrating a light source incident path of a CMOS image sensor according to a second exemplary embodiment of the present invention.

* Explanation of symbols for the main parts of the drawings

21 silicon substrate 22a, 22b photodiode

23, 28: IMD 24: metal wiring

25: trench mask 26: trench

27: nitride spacer 29: air gap

30 color filter array 31 microlens

TECHNICAL FIELD The present invention relates to a manufacturing technology of a semiconductor device, and more particularly, to a CMOS image sensor and a manufacturing method thereof.

1 is a view showing the structure of a CMOS image sensor according to the prior art.

Referring to FIG. 1, photodiodes PD-A and PD-B of each pixel are formed on a silicon substrate 11, and a multi-layer IMD (Inter Metal Dielectric) 12 is formed on the photodiode. Here, the metal wiring 13 formed between the photodiodes is located between the multilayer IMDs 12.

A color filter array 14 corresponding to each photodiode PD-A and PD-B is formed on the multi-layer IMD 12, and a light source is collected on the color filter array 14. The belonging microlens 15 is formed, and a low thermal oxide 15 (LTO) is formed on the microlens 15.

The structure of the CIS having such a structure is shrunk as the density becomes higher, thereby reducing the pixel size.

However, the smaller the pixel size, the smaller the photodiode size, resulting in loss of the light source.

First, the incident light source L1 does not all enter the photodiode PD-A but is partially reflected by the metal wire 13, so that the incident light incident to the adjacent photodiode PD-B occurs.

The light source L2 is incident between the photodiodes, not the designated photodiode, thereby affecting the loss of the light source and the adjacent photodiode.

Finally, the light source L3 is a light source normally incident on the designated photodiode PD-A.

As described above, the light source L1 and the light source L2 act as noise, causing crosstalk, and lowering the sensitivity of the CMOS image sensor.

The present invention has been proposed to solve the above problems of the prior art, and provides a CMOS image sensor and a method of manufacturing the same, which can prevent the incident light source from being incident to another adjacent photodiode without being incident to a designated photodiode. The purpose is.

CMOS image sensor of the present invention for achieving the above object is a silicon substrate; Photodiodes adjacent to the silicon substrate at a predetermined distance; An insulating layer formed on the silicon substrate; A first optical shield layer of a metallic material formed inside the insulating layer between the neighboring photodiodes; And a second optical shield layer formed inside the insulating layer between both sides of the first optical shield layer and the photodiode, wherein the second optical shield layer includes both sides of the first optical shield layer and the photo. Trenches formed in the insulating layer between the diodes; Insulating spacers formed on both sidewalls of the trench; And an air gap provided inside the trench by the insulating spacer and the insulating layer, wherein the insulating spacer is formed of a nitride film material, and the trench has a depth of 15000 Å to 40000 Å. .

In addition, the CMOS image sensor of the present invention comprises a silicon substrate, a photodiode formed in the silicon substrate; A first insulating layer having a multi-layer structure formed on the silicon substrate to provide a deep trench to open the photodiode, an optical shield layer formed on both sidewalls of the deep trench, and a transparent layer of a single layer embedded in the deep trench And a color filter array on the transmission layer, and a microlens on the color filter array, wherein the transmission layer is formed of a material having a refractive index different from that of the light shield layer. Is an inorganic material or an organic material, and the transmission layer is the same material as the first insulating layer and is characterized in that it is a single layer.

The method of manufacturing the CMOS image sensor of the present invention includes forming a photodiode in a silicon substrate, and forming a multi-layered metal interconnection between the multilayer first insulating layer and the multilayer first insulating layer on the silicon substrate. Forming a trench by etching the first insulating layer to a predetermined depth until the thickness remains on the photodiode, and forming an optical shield layer on both sidewalls of the trench; Forming a second insulating layer on the second insulating layer, the color filter array corresponding to the photodiode, and a micro corresponding to the photodiode on the color filter array. And forming a lens, wherein the forming of the optical shield layer comprises a predetermined refractive index on the entire surface including the trench. Forming a spacer layer having a, and forming a spacer in the form of a spacer in contact with both side walls of the trench by blanket etching the spacer layer.

In addition, the method of manufacturing a CMOS image sensor of the present invention comprises the steps of forming a photodiode in a silicon substrate, sequentially forming a first insulating layer and an etching barrier layer on the silicon substrate, the multilayer on the etching barrier layer Forming a second insulating layer and a passivation layer in sequence, forming a deep trench for etching the passivation layer and the second insulating layer to open an upper portion of the photodiode, and etching the etch barrier layer on both sidewalls of the deep trench. Forming a light shield layer, forming a single layer of a transparent layer filling the deep trench, forming a color filter array corresponding to the photodiode on the entire surface including the transparent layer, and forming an image on the color filter array And forming a microlens corresponding to the photodiode.

Hereinafter, the preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. .

2 is a diagram illustrating a structure of a CMOS image sensor according to a first exemplary embodiment of the present invention.

Referring to FIG. 2, the photodiodes 22a and 22b adjacent to the silicon substrate 21, the silicon substrate 21, and the IMDs 23 and 28 formed on the silicon substrate 21 and the photodiode ( Metal wires 24 formed inside the IMDs 23 and 28 between the 22a and 22b, and nitride film spacers formed inside the IMDs 23 and 28 between the metal wires 24 and the photodiodes 22a and 22b. And (27). Here, the metal wiring 24 serves as a first optical shield layer, and the air gap 29 provided by the nitride film spacer 27 serves as a second optical shield layer together with the nitride film spacer 27 to form a nitride film spacer ( 27 and the air gap 29 serves as a dual light shield.

The color filter array 30 is formed on the insulating layers 23 and 28, and the microlenses 31 corresponding to the photodiodes 22a and 22b are formed on the color filter array 30, respectively.

According to FIG. 2 described above, the nitride film spacer 27 and the air gap 29 are formed around the photodiodes 22a and 22b, and the nitride film spacer 27 and the air gap 29 serve as a dual light source shield. Shielding a light source having an angle of incidence toward an adjacent photodiode among light sources incident on a designated photodiode prevents incident on the adjacent photodiode to prevent crosstalk.

3A to 3C are cross-sectional views illustrating a method of manufacturing a CMOS image sensor according to a first exemplary embodiment of the present invention.

As shown in FIG. 3A, photodiodes 22a and 22b of each pixel are formed on the silicon substrate 21 at regular intervals.

Thereafter, a multi-layer IMD 23 process and a multi-layer metal wiring 24 process are performed on the silicon substrate 21. At this time, the multi-layered metal wires 24 are formed on the IMD 23 between the photodiodes 22a and 22b to enter the photodiodes 22a and 22b without exiting the microlenses without interfering with the light source. It also serves as a light shielding layer that blocks unnecessary light sources. The highest IMD may be a protective film among the multilayer IMDs 23, and the protective film may be a double layer of an oxide film and a nitride film.

Next, a photoresist film is applied on the IMD 23 and patterned by exposure and development to form a trench mask 25. At this time, the trench mask 25 is for etching the IMD 23 around the photodiode to form a trench.

Subsequently, the trench 26 is etched using the trench mask 25 as an etch barrier to form the trench 26. At this time, the trench 26 is formed by etching the IMD 23 around the photodiodes 22a and 22b to a predetermined depth, and forming the IMD 23 between the metal wiring 24 and the photodiodes 22a and 22b. It is etched, and the depth is to the surface in which the lowest metal wiring was formed among the multilayer metal wiring 24. Preferably, the depth of trench 26 is 15000 kPa to 40000 kPa.

The etching process for forming the trench 26 is dry etching using C ₄ F ₈ alone or using plasma activated by a combination of C ₂ F ₆ / O ₂ / Ar / N ₂ . In addition, CHF ₃ or CF ₄ may be used alone, or an activated plasma composed of a combination of CHF ₃ and CF ₄ may be used.

Looking at the recipe of each gas in detail, C ₄ F ₈ , C ₂ F ₆ is 2sccm ~ 200sccm, O ₂ is 2sccm ~ 100sccm, Ar is 10sccm ~ 2000sccm, N ₂ is 2sccm ~ 500sccm, CHF ₃ is 2sccm ~ 200sccm, CF ₄ uses a flow rate of 2 sccm to 200 sccm. In addition, a low density or middle density plasma is used, the pressure is 10 mT to 500 mT, the source power is 500 to 3000 W, and the bias power is 100 to 2000 W.

As shown in FIG. 3B, the trench mask 25 is removed.

Subsequently, after the nitride film is deposited, the nitride film blanket is etched to form a nitride film spacer 27 in contact with both side walls of the trench 26.

The nitride blanket etching proceeds by dry etching using plasma activated with a mixture of at least CxFy, that is, C ₄ F ₈ or C ₂ F ₆ / O ₂ / Ar. In addition, it is also possible to proceed by further adding nitrogen (N ₂ ) gas.

Referring to the recipe for etching the nitride film blanket, C ₄ F ₈ , C ₂ F ₆ is used 2sccm ~ 200sccm, O ₂ is 2sccm ~ 100sccm, Ar is 10sccm ~ 2000sccm, N ₂ is used 2sccm ~ 500sccm. In addition, a low density and middle density plasma are used, and the pressure is 10 mT to 500 mT, the source power is 500 to 3000 W, and the bias power is 100 to 2000 W.

As shown in FIG. 3C, an IMD 28 made of an oxide film is deposited on the entire surface including the nitride film spacer 27. At this time, the upper part of the trench 26 is closed by the bad step coverage (not deposited with a uniform thickness on the lower surface) of the IMD 28, so that the air gap between the nitride film spacers 27 as shown in the drawing. gap, 29) is formed.

Figure 4a and 4b is a cross-sectional picture of the air gap, Figure 4a is observed in the state without the dip (Dip) using the BOE solution, Figure 4b is observed by proceeding with the dip using the BOE solution .

FIG. 5 is a view illustrating a light source incident path of the CMOS image sensor according to the first embodiment of the present invention. FIG. 3C illustrates an incident path of the light source after forming the color filter array 30 and the microlens 31. To illustrate.

Referring to FIG. 5, the incidence of the light source L11 is changed by the incident angle of the nitride film spacer 27 (①) to enter the designated photodiode PD-B.

In addition, the incidence angle of the light source L11 is weak, passing through the nitride film spacer 27 as shown in (2), and the incident angle is changed again in the air gap 29 to enter the designated photodiode PD-B. That is, the nitride film spacer 27 and the air gap 29 serve as a dual light shield to allow a light source having a small incident angle among the incident light sources L11 to enter the designated photodiode PD-B.

Reference numeral ③ shows crosstalk generated when there is no dual light source shield, and the present invention provides a dual light source shield of a nitride film spacer 27 and an air gap 29 to prevent crosstalk between adjacent photodiodes. do.

The light source L12 represents a light source incident between the microlens and the microlens. The unnecessary light source L12, which is not focused through the microlens, tries to enter the photodiode, thereby changing the incident angle at the nitride film spacer 27 and the air gap 29. (④, ⑤) Prevent entry into adjacent photodiode PD-B.

The light source L13 indicates that the light source L13 is incident on the designated photodiode PD-B.

According to the first embodiment described above, the nitride film spacer 27 and the air gap 29 are formed around the photodiode, and the nitride film spacer 27 and the air gap 29 serve as a dual light source shield to designate the designated photodiode. Shielding a light source having an angle of incidence toward an adjacent photodiode among light sources incident on the second light source prevents incident light to an adjacent photodiode to prevent crosstalk.

6 is a diagram illustrating a structure of a CMOS image sensor according to a second exemplary embodiment of the present invention.

Referring to FIG. 6, a deep trench formed on the silicon substrate 41, the photodiodes 42a and 42b formed in the silicon substrate 41, and the silicon substrate 41 to open the upper portions of the photodiodes 42 and 42b ( 49) provides a multi-layered IMD 45, a spacer 50 formed on both side walls of the deep trench 49, a single transmissive layer 51 embedded in the deep trench 49, and a transmissive layer 51 An upper color filter array 53 and a microlens 54 above the color filter array 53 are included. In addition, the PMD 43 and the etching barrier layer 44 are positioned below the insulating layer 45, and a multi-layered metal wiring 46 is formed inside the IMD 45 between the photodiodes and the upper part of the IMD 45. The protective film 47 is formed in this. Here, the deep trench 49 is provided by the IMD 45 and the protective film 47.

According to FIG. 6 described above, a spacer 50 is formed around the photodiodes 42a and 42b, and the spacer 50 acts as a light source shield, so that the incident angle toward the adjacent photodiode among the light sources incident on the designated photodiode. By shielding the light source, it prevents the incident to the adjacent photodiode to prevent crosstalk.

In addition, since the IMD 45 on the photodiodes 42a and 42b is replaced with the single-layer transmission layer 51, the loss of the light source incident on the photodiode does not occur.

7A to 7F are cross-sectional views illustrating a method of manufacturing a CMOS image sensor according to a second exemplary embodiment of the present invention.

As shown in FIG. 7A, photodiodes 42a and 42b of each pixel are formed on the silicon substrate 41 at regular intervals.

Thereafter, after forming a PMD (Pre-Metal Dielectric) 43 on the silicon substrate 41, an etching barrier layer 44 is formed on the PMD 43. In this case, the etching barrier layer 44 may be used as a nitride film or may be formed of a material having a high selectivity during subsequent deep trench etching. For example, SiC, SiON or undoped polysilicon are formed. The etching barrier layer 44 may be formed after the formation of the lowest metal wiring (commonly referred to as M1) in the subsequent multilayer metal wiring 46 process.

Subsequently, after the metal wiring 46 is formed on the etching barrier layer 44, the multilayer IMD 45 process and the multilayer metal wiring 46 process are performed. At this time, the multi-layered metal wiring 46 is formed between the photodiodes 42a and 42b so as to block unnecessary light sources entering the photodiodes 42a and 42b without leaving the light source incident to the photodiodes 42a and 42b. It also serves as a shield layer.

Subsequently, a passivation layer 47 is formed on the multilayer IMD 45. At this time, the protective film 47 is a nitride film.

Next, a photoresist film is applied on the protective film 47 and patterned by exposure and development to form a trench mask 48. At this time, the trench mask 48 is to form a deep trench by etching the IMD 45 of the upper portion of the photodiode. Thus, the trench mask 48 is a type that opens the photodiode top. The trench mask 48 may be formed of a hard mask such as a nitride film or polysilicon instead of the photosensitive film.

Subsequently, the protective film 47 is etched using the trench mask 48 as an etch barrier, and the IMD 45 is subsequently etched to form the deep trench 49. In this case, the deep trench 49 is formed by etching the IMD 45 on the photodiodes 42a and 42b until the surface of the etching barrier layer 44 is exposed. That is, the etching stops at the etching barrier layer 44.

The etching process of the IMD 45 for forming the deep trench 49 may be performed by selecting a process having a high selectivity with the etching barrier layer 44 and the IMD 45, in which case a multi-step is performed. Select. That is, the oxygen ratio of one step to two steps is selected so that one step is larger than two steps so that the etching barrier layer 44 stops the etching in the etching barrier layer 44 by having a high selection ratio with the etching barrier layer 44 in two steps. Ultimately, the etching barrier layer 44 is to prevent the micro-trench to the side that occurs during the etching process for forming the deep trench 49, when the micro trench is generated to attack the photodiode Can give

Preferably, the etching process for forming the deep trench 49 is dry etching using C ₄ F ₈ alone or using plasma activated by a combination of C ₂ F ₆ / O ₂ / Ar / N ₂ . In addition, CHF ₃ or CF ₄ may be used alone, or an activated plasma composed of a combination of CHF ₃ and CF ₄ may be used.

Looking at the recipe of each gas in detail, C ₄ F ₈ , C ₂ F ₆ is 2sccm ~ 200sccm, O ₂ is 2sccm ~ 100sccm, Ar is 10sccm ~ 2000sccm, N ₂ is 2sccm ~ 500sccm, CHF ₃ is 2sccm ~ 200sccm, CF ₄ uses a flow rate of 2 sccm to 200 sccm. In addition, a low density or middle density plasma is used, the pressure is 10 mT to 500 mT, the source power is 500 to 3000 W, and the bias power is 100 to 2000 W.

As shown in FIG. 7B, the trench mask 48 is removed.

Subsequently, the spacer insulating layer is deposited and then the blanket is etched to form the spacers 50 in contact with both side walls of the deep trench 49. At this time, the etching barrier layer 44 at the bottom of the deep trench 49 is etched. The protective film 47 is left. Here, the material used as the spacer 50 may be any material other than that of the nitride film, which is different from the material to be filled in the deep trench 49. That is, the material of the spacer 50 is selected so that the light source passing through the single transmissive layer 51 of the subsequent monolayer is refracted at the spacer 50.

In the case where the spacer 50 is a nitride film, the blanket etching proceeds to dry etching using plasma activated with a mixed gas of at least CxFy, that is, C ₄ F ₈ or C ₂ F ₆ / O ₂ / Ar. In addition, it is also possible to proceed by further adding nitrogen (N ₂ ) gas.

Referring to the recipe for etching the nitride film blanket, C ₄ F ₈ , C ₂ F ₆ is used 2sccm ~ 200sccm, O ₂ is 2sccm ~ 100sccm, Ar is 10sccm ~ 2000sccm, N ₂ is used 2sccm ~ 500sccm. In addition, a low density and a middle density plasma are used, and the pressure is 10 mT to 500 mT, the source power is 500 to 3000 W, and the bias power is 100 to 2000 W.

As illustrated in FIG. 7C, a single transmission layer 51 selected from an inorganic material or an organic material is deposited in the deep trench 49. The deposition of the single transmissive layer 51 causes a step between the deep trench 49 and the region outside the deep trench 49. The single transmission layer 51 is formed in a single layer structure to reduce the loss of the light source incident on the photodiode, and prevents the loss of the light source due to the existence of the multi-layer IMD 45. For example, the single transmissive layer 51 may be a material used as the IMD 45.

Subsequently, the step compensation layer 52 is deposited, and the step compensation layer 52 serves to compensate for the step during the subsequent chemical mechanical polishing (CMP) of the single transmission layer 51 to be polished. For example, the step compensation layer 52 is formed of a nitride film.

FIG. 7D is an intermediate view of the chemical mechanical polishing (CMP) process. As shown here, the '52a' area of the step compensation layer 52 is polished and the step compensation of the '52b' area is performed during the chemical mechanical polishing (CMP) process. It can be seen that only layer 52 is present.

As such, when the chemical mechanical polishing (CMP) is performed using the polishing selectivity, the flattening of the single transmission layer 51 is better.

Chemical mechanical polishing (CMP) of the single permeable layer 51 causes the polishing to stop at the protective film 47, as shown in FIG. 7E. As a result, the single transmission layer 51 made of an inorganic material or an organic material is planarized, and finally the single transmission layer 51 is filled only in the deep trench 49 above the photodiodes 42a and 42b.

Next, as shown in FIG. 7F, a color filter array 53 corresponding to the photodiodes 42a and 42b is formed on the flattened single transmissive layer 51 and formed on the color filter array 53. The microlenses 54 for focusing the light source are formed corresponding to the photodiodes 42a and 42b, respectively.

8 is a view illustrating a light source incident path of a CMOS image sensor according to a second exemplary embodiment of the present invention.

Referring to FIG. 8, the incidence of the light source L21 is incident on the photodiode PD-B by changing the incidence angle at the spacer 50.

Reference numeral VII denotes crosstalk generated by the light source L21 in the absence of the spacer 50.

The light source L23 represents a light source incident between the microlens and the microlens. The unnecessary light source L23, which is not focused through the microlens, tries to enter the photodiode, thereby changing the angle of incidence at the spacer 50 so as to be adjacent to the photodiode. Do not enter the PD-B.

The light source L22 indicates that the light source L22 is incident on the designated photodiode PD-B.

According to the second embodiment described above, a spacer 50 is formed around the photodiode, and the spacer 50 acts as a light source shield and has an incident angle toward the adjacent photodiode among the light sources incident on the designated photodiode. Shield to prevent incident to the adjacent photodiode to prevent crosstalk.

In addition, since the IMD 45 on the photodiode is replaced with the single-layer transmissive layer 51, the loss of the light source incident on the photodiode does not occur.

As described above, the present invention is not limited to the above-described embodiments and the accompanying drawings, and the present invention may be variously substituted, modified, and changed without departing from the spirit of the present invention. It will be apparent to those of ordinary skill in Esau.

According to the present invention, a nitride spacer and an air gap are formed around the photodiode, and the nitride spacer and the air gap serve as a dual light source shield, and a light source having an incident angle toward an adjacent photodiode among light sources admitted to the photodiode region is used. The shield prevents incident to the adjacent photodiode area, thereby preventing crosstalk.

This allows more light sources to focus into the photodiode region, thereby improving the sensitivity of the CMOS image sensor.

Claims (34)

Silicon substrate; Photodiodes adjacent to the silicon substrate at a predetermined distance; An insulating layer formed on the silicon substrate; A first optical shield layer of a metallic material formed inside the insulating layer between the neighboring photodiodes; And A second optical shield layer formed inside the insulating layer between both sides of the first optical shield layer and the photodiode CMOS image sensor comprising a. The method of claim 1, The second optical shield layer, Trenches formed in the insulating layer between both sides of the first optical shield layer and the photodiode; Insulating spacers formed on both sidewalls of the trench; And An air gap provided in the trench by the insulating spacer and the insulating layer CMOS image sensor comprising a. The method of claim 2, The insulating spacer is a CMOS image sensor, characterized in that the material. The method of claim 2, The trench has a depth of 15000 Pa to 40000 Pa, the CMOS image sensor. The method of claim 1, The first optical shield layer, CMOS image sensor, characterized in that the metal wiring. The method according to any one of claims 1 to 5, A color filter array respectively corresponding to the photodiode on the insulating layer; And Micro lenses formed on the color filter array and corresponding to the photodiodes, respectively. CMOS image sensor further comprising. Silicon substrate; A photodiode formed in the silicon substrate; A first insulating layer formed on the silicon substrate to provide a deep trench for opening the photodiode top; An optical shield layer formed on both sidewalls of the deep trench; A transmissive layer of a single layer embedded in the deep trench; A color filter array on the transmission layer; And Micro lens on the color filter array CMOS image sensor comprising a. The method of claim 7, wherein A second insulating layer interposed between the first insulating layer and the silicon substrate and providing a separation distance between the deep trench and the silicon substrate; An etching barrier layer interposed between the second insulating layer and the first insulating layer; And A passivation layer interposed between the upper surface of the first insulating layer outside the deep trench and the color filter array; CMOS image sensor further comprising. The method of claim 8, The protective film and the etching barrier layer is CMOS image sensor, characterized in that the nitride film. The method of claim 8, The etching barrier layer is a CMOS image sensor, characterized in that the SiC, SiON or polysilicon. The method of claim 7, wherein The optical shield layer is a CMOS image sensor, characterized in that the nitride film. The method of claim 7, wherein The transmission layer, CMOS image sensor, characterized in that the light shielding layer and the material having a different refractive index. The method of claim 12, The transmission layer, CMOS image sensor, characterized in that the inorganic material or organic material. The method of claim 12, The transmission layer, CMOS image sensor, characterized in that the same material as the first insulating layer and a single layer. Forming a photodiode in the silicon substrate; Forming a multi-layered metal wiring between the multi-layered first insulating layer and the multi-layered first insulating layer on the silicon substrate; Forming a trench by etching the first insulating layer to a predetermined depth until the thickness remains on the photodiode; Forming an optical shield layer on both side walls of the trench; Forming a second insulating layer in the trench to provide an air gap; Forming a color filter array corresponding to the photodiode on the second insulating layer; And Forming a microlens corresponding to the photodiode on the color filter array Method of manufacturing a CMOS image sensor comprising a. The method of claim 15, Forming the optical shield layer, Forming a spacer layer having a predetermined refractive index on the entire surface including the trench; And Blanket etching the spacer layer to form an optical shield layer having a spacer shape in contact with both sidewalls of the trench; Method of manufacturing a CMOS image sensor comprising a. The method of claim 16, The optical shield layer is formed of a nitride film, characterized in that the manufacturing method of the CMOS image sensor. The method of claim 17, The blanket etching for forming the optical shield layer formed of the nitride film, A method of manufacturing a CMOS image sensor, characterized in that by dry etching using a plasma activated with a mixture gas of C ₄ F ₈ or C ₂ F ₆ / O ₂ / Ar. The method of claim 18, The blanket etching is a method of manufacturing a CMOS image sensor, characterized in that further proceed by adding nitrogen gas. The method of claim 19, When the blanket is etched, the C ₄ F ₈ , C ₂ F ₆ is 2sccm ~ 200sccm, O ₂ is 2sccm ~ 100sccm, Ar is 10sccm ~ 2000sccm, N ₂ is used 2sccm ~ 500sccm, low density or medium density A plasma is used, the pressure is 10 mT to 500 mT, the source power is 500 to 3000 W, and the bias power is 100 to 2000 W, The manufacturing method of the CMOS image sensor characterized by the above-mentioned. The method of claim 15, Forming the trench, Forming a trench mask using a photosensitive film on the first insulating layer; And Forming a trench by etching the first insulating layer to a predetermined depth using the trench mask as an etch barrier; And Removing the trench mask Method of manufacturing a CMOS image sensor comprising a. The method of claim 15 or 20, The trench is formed with a depth of 15000 Pa to 40000 Pa, The manufacturing method of the CMOS image sensor characterized by the above-mentioned. The method of claim 15, And the second insulating layer is formed of an oxide film. Forming a photodiode in the silicon substrate; Sequentially forming a first insulating layer and an etching barrier layer on the silicon substrate; Sequentially forming a multi-layered second insulating layer and a passivation layer on the etching barrier layer; Etching the passivation layer and the second insulating layer to form a deep trench that opens an upper portion of the photodiode; Forming an optical shield layer on both sidewalls of the deep trench while etching the etching barrier layer; Forming a monolayer transmissive layer filling the deep trench; Forming a color filter array corresponding to the photodiode on the entire surface including the transmission layer; And Forming a microlens corresponding to the photodiode on the color filter array Method of manufacturing a CMOS image sensor comprising a. The method of claim 24, Forming the optical shield layer, Forming a spacer layer having a predetermined refractive index on the entire surface including the deep trench; And Blanket etching the spacer layer to form an optical shield layer having a spacer shape in contact with both sidewalls of the trench; Method of manufacturing a CMOS image sensor comprising a. The method of claim 25, The optical shield layer is formed of a nitride film, characterized in that the manufacturing method of the CMOS image sensor. The method of claim 26, The blanket etching for forming the optical shield layer formed of the nitride film, A method of manufacturing a CMOS image sensor, characterized in that by dry etching using a plasma activated with a mixture gas of C ₄ F ₈ or C ₂ F ₆ / O ₂ / Ar. The method of claim 27, The blanket etching is a method of manufacturing a CMOS image sensor, characterized in that further proceed by adding nitrogen gas. The method of claim 28, When the blanket is etched, the C ₄ F ₈ , C ₂ F ₆ is 2sccm ~ 200sccm, O ₂ is 2sccm ~ 100sccm, Ar is 10sccm ~ 2000sccm, N ₂ is used 2sccm ~ 500sccm, low density or medium density A plasma is used, the pressure is 10 mT to 500 mT, the source power is 500 to 3000 W, and the bias power is 100 to 2000 W, The manufacturing method of the CMOS image sensor characterized by the above-mentioned. The method of claim 24, The transmission layer, The method of manufacturing a CMOS image sensor, characterized in that the optical shield layer and the refractive index is formed of a different material. The method of claim 30, The transmission layer is a method of manufacturing a CMOS image sensor, characterized in that formed with an inorganic material or an organic material. The method of claim 31, wherein The transmission layer is a method of manufacturing a CMOS image sensor, characterized in that formed of the same material as the first insulating layer and a single layer. The method of claim 24, The protective film and the etching barrier layer is a manufacturing method of the CMOS image sensor, characterized in that formed by the nitride film. The method of claim 24, The etching barrier layer is formed of SiC, SiON or polysilicon, characterized in that the manufacturing method of the CMOS image sensor.

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