KR100730294B1 - Production method of photo lithography by self-assembling, the circuit by this method, and application of the circuit - Google Patents

Abstract

A method for forming a lithography circuit, the circuit manufactured thereby and the application of the circuit are provided to reduce material costs, to decrease a processing time, to improve thin film characteristics and to control easily electric conductivity by performing a photolithography using a self-assembly process. A photosensitive inorganic oxidant is coated on a base member. A first circuit is formed on the resultant structure by irradiating selectively UV(UltraViolet) rays or visible rays through a photomask. The resultant structure contacts a gas phase monomer, so that a polymer thin film is selectively formed on the resultant structure. A cleaning process is performed on the resultant structure in order to remove undesired materials therefrom.

Description

 Production Method of Photo Lithography by Self-Assembling, the Circuit by This Method, and Application of the Circuit

The present invention relates to a method for self-assembly lithography circuitry (patterning), and more particularly to manufacturing a coated substrate; Forming a primary circuit; Completing circuit formation; And a self-assembling lithography circuit forming method comprising a washing step, a self-assembling lithography circuit manufactured by the above method, and an electrode circuit forming method using the circuit.

Until now, the patterning method using lithography technology has been mainly used in the semiconductor manufacturing process or the manufacture of electronic devices. However, due to the high density of semiconductor devices, nanometer size devices which are being actively studied are manufactured. In order to achieve this, there is a technical and economic limitation in the conventional patterning method, and a new patterning technique is urgently required. In particular, in the case of the conventional photo lithography (photolithography) technology, the patterning resolution is inversely proportional to the wavelength of the light source, and the wavelength of the light source must be shortened to obtain high resolution patterning. In the case of using a short wavelength light source, the light absorption of the photoresist, which is a mixture containing light-sensitive polymers, is increased, so that the thickness of the photoresist film must be very thin and the entire substrate must be uniformly covered. It should be over a micron thick. In order to solve such a problem, the organic monomolecular film is proposed, and the self-assembled molecular film is an ideal organic molecular film, which is a uniform organic film having a thickness of several nanometers. However, alkylsilane compounds and the like that make a self-assembled molecular film have a problem in that it takes a long time and consumes a lot of energy in the case of patterning by conventional photolithography methods with molecules that are not self-activating against ultraviolet rays, thereby increasing the cost of the process. .

In addition, the process used for circuit formation in the semiconductor and display industries is mainly performed by photo lithography, in which case a developer is required together with a photosensitive polymer material, all of which are liquid materials. The process is characterized by being wet. In addition, since the coating thickness must be maintained at least a few micrometers (μm), there are many limitations in the formation of ultrafine circuits. Such a method is a typical top-down processing technique in which a thick photosensitive polymer film is coated and then exposed to UV light and a non-exposed part to selectively dissolve during development. In addition, it requires a lot of investment cost and material cost, and due to the large amount of organic solvents, environmental problems are also known as a very high method, but it is still used in most manufacturing and development processes because there is no suitable method to replace. It is becoming.

Therefore, the present inventors do not require a photosensitive polymer and a developer, and while developing a circuit manufacturing method with a simple process, a method of manufacturing a lithography circuit by a self-assembly method by a bottom-up method is developed. The present invention has been completed by confirming that the circuit can freely form a finer circuit and can be effectively used in photo processes in semiconductors and displays.

An object of the present invention is to produce a top-down manufacturing process using a photoresist, a developer, and the like by a photolithography method. A self-assembling lithography patterning method is achieved by a bottom-up fabrication process that uses a self-assembly lithography method to produce various polymer thin film patterns by simple CVD. To provide.

It is a further object of the present invention to provide a self-assembled lithography circuit manufactured by the above method.

It is yet another object of the present invention to provide a method of using the self-assembled lithography circuit.

In order to achieve the above object, the present invention comprises the steps of preparing a coated substrate for coating a substrate with a photosensitive inorganic oxidant acting as a catalyst or an oxidizing agent in nanometer (nm) unit thickness; Irradiating selective UV light or visible light with an exposure apparatus by applying a photo mask having a circuit to the substrate coated with the photosensitive inorganic oxidizing agent to form a primary circuit in the light exposure portion; Contacting the substrate on which the primary circuit is formed with a monomer in a gaseous state to selectively grow a polymer thin film on a portion exposed to UV light or visible light and an unexposed portion on the surface of the substrate to complete circuit formation. step; And a washing step of removing impurities or unreacted substances from the substrate on which the circuit formation is completed, the self-assembly lithography patterning method.

The present invention also provides a self-assembling lithography circuit having electric conductivity manufactured according to the above method.

The present invention also provides a method for forming an electrode circuit using the self-assembled lithography circuit as an electronic component, flat panel display, or semiconductor material.

Hereinafter, the present invention will be described in more detail.

The present invention comprises the steps of: i) preparing a coated substrate for coating a substrate to a nanometer (nm) thickness of a photosensitive inorganic oxidant acting as a catalyst or oxidant; Ii) irradiating selective UV light or visible light with an exposure apparatus by applying a photo mask including a circuit to the substrate coated with the photosensitive inorganic oxidizing agent to form a primary circuit in the light exposure portion; Iii) forming a circuit by contacting the substrate on which the primary circuit is formed with a monomer in a gaseous state and selectively growing a polymer thin film on a portion exposed to UV light or visible light and an unexposed portion on the surface of the substrate. Completing; And iii) a washing step of removing impurities or unreacted substances from the substrate on which the circuit formation is completed, the self-assembly lithography patterning method.

In the self-assembly lithography circuit formation method of the present invention, it is also preferable to dry the substrate through a dryer after coating of the photosensitive oxidant in the manufacture of the coated substrate, specifically, the substrate coated with the oxidant is 30 to 80 ° C. Dry for 0.1-8 minutes in a dryer.

In the self-assembly lithography circuit forming method of the present invention, the substrate is preferably selected from the group consisting of glass, silicon wafer, metal and plastic, and the plastic substrate is polyester (PET), polycarbonate (PC), poly More preferably, it is a transparent plastic selected from the group consisting of mead (PI), polyethersulfone (PES), TAC, COC polymer and polyester.

In the self-assembling lithography circuit formation method of the present invention, the photosensitive inorganic oxidizing agent is preferably composed of a copper oxidizing agent or a trivalent iron compound (Fe ^{+ 3} ), and CuCl ₃ , Cu (ClO ₄ ) ₂ .6H _2. More preferably selected from the group consisting of O, FeCl ₃ and Ferric p-Toluene Sulfonate. Specifically, the photosensitive oxidizing agent may be Irgacure, CuCl ₃ , FeCl ₃ , Cu (ClO ₄ ) ₂ · 6H ₂ O (copper (II) perchloratehexa-hydrate) or Ferric p-toluene sulfonate, and the like, the oxidizing agent is methyl alcohol, It is prepared by dissolving in an organic solvent consisting of ethyl alcohol, cyclohexane, acetone, 2-butyl alcohol, ethyl acetate, toluene and ethyl cellosolve (ethyl cellosolve). The solvent may be used alone or 2-3 mixed, for example, the mixing ratio of methyl alcohol, 2-butyl alcohol and ethyl cellosolve is 7: 2: 1, 6: 2: 2, 6: 3 1: 1 or 5: 3: 2, the photosensitive oxidant is prepared at 0.5 to 10% by weight based on the total weight.

In addition, it is preferable that another host polymer material is additionally added to the photosensitive oxidant to improve adhesion, and the host polymer material is polybutylacrylate, polycarbonate, polyurethane, polyvinyl chloride, polyvinyl alcohol, polyester, methyl It is preferably selected from the group consisting of cellulose and chitosan, wherein the host polymer is more preferably added at 0.5 to 10% by weight based on the total weight.

In the self-assembling lithography circuit formation method of the present invention, the exposure machine preferably uses an electron beam or plasma, and the irradiation of UV light or visible light of the exposure machine has a wavelength range of 100-500 nm. It is more preferable that it is irradiation of.

Further, in the self-assembling lithography circuit formation method of the present invention, the gaseous monomer may be aniline, pyrrole, ciophene, furan, serenophene, 2,3-dihydrocyo-3,4-dioxin (EDOT). ) And derivatives thereof, and other acrylic monomers, imides and the like can be used.

Further, in the self-assembly lithography circuit forming method of the present invention, the method of vaporizing the monomer includes a method of distilling the monomer between 10 to 100 ° C. in a closed chamber and a method by a chemical vapor deposition (CVD) apparatus. Contacting the substrate on which the primary circuit is formed with a gaseous monomer is preferably performed in a CVD chamber, and the monomer is vaporized in the CVD chamber so that the self-assembled polymer is grown so that the oxidant is coated. It is more preferable that it is made by contacting the base material which was made. In the vaporization chamber, the monomer is vaporized and contacted with the substrate coated with the oxidant to cause a polymerization reaction by a self-assembly method. The reaction temperature is 0 to 100 ° C. and the reaction time is 5 seconds to 40 minutes.

In addition, in the self-assembled lithography circuit formation method of the present invention, it is preferable to remove the unreacted substance with an organic solvent or water, and the organic solvent is preferably selected from alcohols such as methanol and acetone. Each step of the self-assembly lithography circuit formation method may be performed in a discontinuous stepwise process or a continuous process. That is, the unreacted monomer and oxidant are washed with water or an organic solvent such as alcohol including methanol. UV light can be irradiated during the self-assembly polymerization process in the above process.

Further, in the self-assembling lithography circuit forming method of the present invention, a primary circuit of the photosensitive inorganic oxidizing agent is formed by contact printing or inkjet instead of forming the primary circuit, and the circuit formation is completed. Is preferably made by selectively growing a polymer thin film only on the circuit portion of the inorganic oxidizing agent on the surface of the substrate.

The conductive polymer material of the circuit manufactured according to the self-assembly synthesis method according to the present invention has the structure shown in the following structural formula (1).

[Formula 1]

Wherein X is selected from the crowd consisting of sulfur (S), oxygen (O), selenium (Se) and NH; R ₁ and R ₂ are selected from the group consisting of hydrogen, an alkyl group containing 3 to 15 carbons, an ether containing 3 to 15 carbons, a halogen element and a benzene group.

The conductive polymer is preferably polypyrrole, polythiophene, polyfuran, polyserenophene and derivatives thereof, and is prepared in the form of a film having a thickness of 0.01 to 5 microns (μm), and the pattern size that can be processed by lithography is 10 Free control from nanometers (nm) to tens of microns (μm). The electrical conductivity of the conjugated conductive polymer prepared by the present invention is about 10 ² ~ 10 ⁸ Ω / □, the electrical conductivity and mechanical strength is different depending on the concentration of the oxidizing agent, the synthesis time and temperature. In particular, when pyrrole is used as a monomer, variables such as reaction time, reaction temperature, reaction solvent, and oxidizing agent have a great influence on the microstructure and electrical conductivity of the synthesized conductive polymer. In addition, pyrrole has a relatively low oxidation potential and high vapor pressure, so that it can easily cause a chemical reaction in the gas phase.

Photolithography by the self-assembly process produced by the method of the present invention basically does not require a photosensitive polymer and a developer, the process is simple and the circuit is formed in a bottom-up (bottom-up) method . The bottom-up self-assembly method does not process the membrane into the required shape after manufacturing the membrane. Instead, the single-molecule chemical is assembled into the required shape. It means that the macromolecule is made into the shape required at the same time as the synthesis. In other words, small cells can be thought of as the same process of making organs or tissues while continuing to divide. The bottom-up processing technology is also a technology field that has attracted much attention as the core of nano materials and nano processing technology.

Specifically, first, a photosensitive inorganic oxidizing agent (catalyst or oxidizing agent) is coated on a silicon, glass or plastic substrate to a thickness of several nanometers (nm), and then irradiated with UV light on a photomask in which a circuit is formed. A primary circuit is formed at the exposed portion with selective UV light exposure to the above photosensitive inorganic oxidant. By placing the substrate on which the primary circuit of the photosensitive inorganic oxidant is formed in a CVD chamber and contacting it with a gaseous monomer, it causes a chemical polymerization reaction on the surface of the substrate, thereby selectively selecting the exposed and unexposed portions of UV light. It is divided into two-step process to allow the polymer thin film to grow. Therefore, the polymer film of the present invention selectively occurs in the part exposed to UV light and the part not exposed, and is characterized by a method of self-assembly.

Since the self-assembled polymer is synthesized in the gaseous state as a whole, the conventional photoresist process is wet, whereas the dry process is also characterized. In the present invention, since the monomer in the gas phase is synthesized into a polymer structure by contacting with a photosensitive inorganic oxidizing agent (oxidizing agent or catalyst) on the surface of the substrate coated with the inorganic oxidizing agent, the present invention refers to this as gas phase polymerization or vapor deposition. The thickness can be freely adjusted from several nanometers (nm) to several tens of nanometers. Accordingly, the present invention relates to a method for manufacturing a thin film of a polymer by vapor phase polymerization and to a circuit structure manufactured by the method. More specifically, an inorganic oxidizing agent is coated on the surface of a substrate in units of several nanometers (nm) and Drying, applying a mask for exposing the oxidizing agent-coated substrate to UV light, selectively causing a polymerization reaction on the surface of the substrate by contacting a gaseous monomer with the substrate, and After the polymerization is completed, it can be divided into a washing step to remove the unreacted monomer and oxidant. That is, while the conventional photolithography manufacturing process consists of photoresist coating-> drying-> exposure-> development-> drying-> circuit formation, the self-assembly lithography manufacturing process of the present invention is a photosensitive inorganic material. Oxidant coating-> drying-> exposure-> polymer polymerization (CVD, gas phase polymerization)-> washing-> circuit formation.

In addition, recently, a patterning technique for circuit formation is also used by a method of simply forming a circuit by a micro contact printing method, a screen print, an in-jet method, and the like. have. It is a feature of the present invention that the self-assembly circuit forming technology of the present invention can also be applied to such a process. When the self-assembly circuit forming technique of the present invention is applied by micro contact printing, first, a photosensitive inorganic oxidant is formed into a thin film of several nanometers by the contact method, and then the self-assembled lithography As in the method, by contacting with a monomer made in a gaseous state in a gas reaction chamber, a gas phase polymerization synthesis reaction is selectively performed only at a portion where the photosensitive inorganic oxidant is buried on the surface of the substrate, thereby forming a circuit of the polymer thin film. Although the resolution of the circuit formed by the self-assembly lithography method is not good, the pattern circuit of a polymer thin film can be formed more simply. In addition, the self-assembly circuit forming technique of the present invention can also be applied by screen printing and in-jet printing. In this case, a photosensitive inorganic oxidizer is used in the printing process, and a gas phase polymerization synthesis reaction may be used for polymer thin film formation and pattern formation.

In summary, the self-assembly microcontact manufacturing process of the present invention is the photosensitive inorganic oxidant pattern formation by the micro-context printing method-> drying-> polymer polymerization (CVD, gas phase polymerization)-> water washing-> circuit formation Is done. In addition, the self-assembling screen printing process of the present invention consists of forming a photosensitive inorganic oxidant pattern by screen printing method-> drying-> polymer polymerization (CVD, gas phase polymerization)-> water washing-> circuit formation. In addition, the self-assembled inkjet printing process of the present invention consists of forming a photosensitive inorganic oxidant pattern by inkjet printing-> drying-> polymer polymerization (CVD, gas phase polymerization)-> water washing-> circuit formation.

The polymer polymerization process by the gas phase polymerization in the present invention may occur at atmospheric pressure or vacuum, the temperature range is more than 10 ℃ to less than 100 ℃ conditions, the organic monomer used is reactive with a photosensitive oxidizing agent or catalyst Use substance. Preferably, monomers in the form of heterocycles such as pyrrole, thiophene, or aniline may be used, and in some cases, acryl monomer, imide and the like may be used. In particular, when a polyacryl-based polymer thin film is formed using an acrylic monomer, the gas phase polymerization reaction proceeds while irradiating UV light in the CVD chamber.

In particular, when a heterocycles monomer such as pyrrole, thiophene, or aniline is used, circuit configuration and patterning composed of a conductive polymer such as polypyrrole, polythiophene, polyaniline, or the like is possible. That is, lithography formed of conductive polymers is possible. Among the heterocyclo compounds, polypyrrole and polythiophene are easy to synthesize, and the synthesized polymer has been studied for its application because the synthesized polymer has high electrical conductivity and excellent atmospheric stability. In addition, there is a feature that can maintain a stable thin film properties up to about 350 ℃ even in the thermal properties.

Electro-chemical polymerization or chemical oxidative polymerization has been known so far as a method of synthesizing the conductive polymer compound. There are many limitations to the application because it is a difficult material to process into a shape of shape.

The processing technique by the gas phase polymerization method in the present invention is sufficient to supplement the above problems and has the advantage that it can be easily synthesized in the gas state even at atmospheric pressure conditions. Recently, it has been reported that the conductive polymer material can be used as a display material as well as for transporting semiconductor IC chips or precision electronic devices (such as a shipping tray or carrier tape) having an antistatic function. The function as an electromagnetic shielding material is highlighted. Therefore, the article manufactured according to the present invention not only has an electrical protection function, but also has a function as a conductor, which is suitable for forming a circuit of a transparent conductive material, and in some cases, replaces ITO, copper, and aluminum electrodes. It can also have excellent performance. This case is a breakthrough circuit formation method that can simply solve the metal pattern that has been manufactured by the existing complex process.

As described above, the self-assembling lithography patterning method of the present invention is a top-down patterned pattern using a photoresist, a developer, and the like by conventional photolithography. ) The manufacturing process is performed by the bottom-up manufacturing process of manufacturing various polymer thin film patterns by simple CVD method by self-assembly lithography method which does not use photosensitive polymer and developer at all. This reduces the process time by more than 50% and provides new construction methods that can reduce material costs by more than 50%. In addition, it is possible to drastically improve the working environment by replacing the wet process of the conventional method with a dry process, and to easily form an ultrafine structure of several tens of nanometers. In addition, it is possible to freely pattern conductive polymers by vapor phase polymerization, which is excellent in thin film properties and can freely control electrical conductivity, thereby providing a method of replacing some of the existing metal processes.

The present invention also provides a self-assembling lithography circuit having electric conductivity manufactured according to the above method.

In the self-assembling lithography circuit of the present invention, it is preferable that the chemical formula of the self-assembled polymer has the following structural formula (1).

[Formula 1]

Where X is selected from the group consisting of sulfur (S), oxygen (O), selenium (Se) and NH; R ₁ and R ₂ are hydrogen, an alkyl group containing from 3 to 15 carbons, 3 to 15 Is selected from the group consisting of ethers, halogens and gen groups containing two carbons)

The present invention also provides a method for forming an electrode circuit using the self-assembled lithography circuit as an electronic component, flat panel display, or semiconductor material. That is, the manufactured circuit forming technology of the present invention can be provided as a new method and product for electronic component materials and displays.

The conductive polymer pattern prepared according to the present invention may have a function of static electricity, antistatic and electromagnetic shielding, and may have a function as a conductor, so that when fabricating a circuit of a conductive film replacing a metal as well as an insulating film, a functional film or a transparent It can also be used as an electrode pattern material. In general, it is suitable for photolithography for semiconductor circuit construction and patterning for display circuit formation.

Conventional methods synthesize a photosensitive polymer and blend it, then spin-coating the surface of a substrate such as silicon wafer, glass substrate, plastic, or metal to make a thin film, and to manufacture final circuit pattern images such as drying, exposure, development, and drying. It should go through five to six steps. In particular, the coating and developing process is made by a wet, and because the organic solvent is used in a large amount, the environmental problem is large, the process takes a lot of time. Considering the costs involved in the photosensitive polymer and the developer, the new method according to the present invention does not use the photosensitive polymer and the developer at all, and because it is made in a short time by a dry process, it is made in a clean state in a short time, so it is an environmental problem. Of course, there is an advantage that can save more than 2/3 of the manufacturing cost.

As described above, the technique of the present invention can be applied to a micro-contact process, a screen printing process, an inkjet printing process, and the like, and in this case, much more processing time and manufacturing cost can be saved than in a photolithography process.

Hereinafter, the present invention will be described in detail by way of examples.

However, the following examples are merely to illustrate the invention, but the content of the present invention is not limited to the following examples.

<Example 1>

After dissolving ferric trichloride (FeCl ₃ ) as a photosensitive oxidizing agent in a methyl alcohol solvent at a weight ratio of 2%, spin-coating a thickness of several nanometers (nm) on a silicon wafer as a substrate, and then at about 60 to 70 ° C Dry for 2-3 minutes. The photomask was placed on an oxidant-coated silicon wafer and exposed to a 248 nm excimer laser to selectively form patterns on the portions irradiated and blocked. The substrate on which the exposed pattern was formed was placed in a CVD chamber designed to produce a saturated pyrrole monomer, and the self-assembly chemical reaction was performed for about 20 to 30 seconds. As a result, polypyrrole polymers having a thickness of several tens of nanometers (nm) grew only in the pattern of the portion not irradiated with laser light, thereby obtaining a silicon wafer on which polypyrrole polymers were patterned.

To remove the unreacted product, the mixture was washed with methanol solvent and dried at 80 ° C. for 5 minutes. At this time, the temperature of the water washing tank was 20 degreeC. As a result, a circuit board on which a transparent brown polypyrrole polymer was patterned was prepared. The polymer film had a thickness of about 10 to 20 nm, a line width of 100 nm, and a sheet resistance of about 10 ⁴ Ω / □, which was stable to organic solvents such as isopropyl alcohol and did not change physical properties even at high temperatures of 300 ° C. or higher.

<Example 2>

Ferric trichloride (FeCl ₃ ) as an oxidizing agent was dissolved 2% by weight in a solvent in which methyl alcohol, 2-butyl alcohol and ethyl cellosolve were mixed at a ratio of 4: 3: 3, respectively, and then the molecular weight was 80,000 as a host polymer. 12% of polyvinyl alcohol was added in a total weight ratio of 1%, followed by spin coating on a base silicon wafer, followed by drying for 2 to 3 minutes at about 60 to 70 ° C. When a photomask was applied to an oxidant-coated silicon wafer and exposed to UV light at 365 nm, a pattern was selectively formed on the portion to which the light was irradiated and the portion to which it was blocked. It proceeded in the same manner as in Example 1 above in a CVD chamber designed to produce saturated thiophene monomers. After the washing and drying process, a circuit board with a patterned transparent blue polythiophene polymer was prepared. The polymer film had a thickness of about 10 to 20 nm, a line width of 100 nm, and a sheet resistance of about 10 ³ Ω / square. It was stable to organic solvents such as MEK and had no change in physical properties even at a high temperature of 350 ° C. or higher. The uniformity of the formed film was high, and the surface hardness of the conductive polymer thin film was improved.

<Example 3>

Cu (ClO ₄ ) ₂ .6H ₂ O as an oxidizing agent was dissolved in a methyl alcohol solvent by 3% by weight, spin coated on a glass substrate, and then dried for 2 to 3 minutes at about 60 to 70 ° C. The oxidant-coated substrate was self-assembled for about 20-30 seconds in an airtight chamber designed to produce saturated pyrrole monomers, exposed to UV light at 365 nm, and washed with water to remove unreacted material. . As a result, a transparent brown conductive polymer film pattern was prepared. The thickness is about 30-50 nm, the circuit line width is 5 micrometers, and the sheet resistance is about 10 ³ ohm / cm <2>, It is stable to organic solvents, such as isopropyl alcohol, and the electrical conductivity did not change even in high temperature process more than 300 degreeC.

<Example 4>

Irgacure 184 was used as an oxidizing agent in Example 1, and the substrate material was a polyester film. As a monomer for self-assembly, an acrylic monomer was used and exposed to UV light of 365 nm. As a result, a circuit shape could be produced with a polynacryl polymer having a thickness of 10 nm with a line width of about 1 μm. The circuit was electrically insulating.

<Example 5>

In Example 1, a circuit pattern was obtained after reacting for about 30 to 40 minutes in a CVD chamber designed to produce 2,3-dihydrocyio-3,4-dioxin monomer. The reaction temperature at this time was 45 degreeC. The thickness was about 80 to 100 nm, the circuit line width was 10 µm, and the surface resistance was about 550 Ω / square, and the electrical conductivity was very high. In this case, since it has high electrical conductivity, it can be used for a metal circuit pattern, and a part of the metal process can be replaced by a polymer film in the semiconductor process.

<Example 6>

In Example 1, the substrate was used as a PET plastic material.

<Example 7>

In Example 1, the process from the coating of the photosensitive oxidant to the UV exposure was constituted by the microcontact printing method and contacted with a gaseous pyrrole monomer in a closed gas phase polymerization chamber in two stages to generate self-assembly polymerization. The polymer thin film was selectively grown only on the portion coated with the oxidizing agent in the contact printing method. As the substrate, a polycarbonate film was used, and a circuit pattern of 30 μm could be formed.

<Example 8>

In Example 7, the process from the coating of the photosensitive oxidant to the UV exposure was constituted by an inkjet method and contacted with a gaseous pyrrole monomer in a closed gas phase polymerization chamber in two stages to cause self-assembly polymerization. The polymer thin film was selectively grown only on the portion where the oxidant was coated.

<Example 9>

In Example 1, 5 wt% of a PVA polymer was used as a host polymer in a photosensitive oxidant for the purpose of improving adhesion.

<Example 10>

In Example 1 distilled water was used in the washing step.

<Example 11>

In Example 1, a circuit pattern having a line width of 5 μm of a polyaniline polymer was obtained using an aniline monomer to form a polymer thin film.

The polymer circuit pattern manufactured according to the above embodiment may be electrically insulating, and may have characteristics as a conductor having electrical conductivity depending on the conditions of the process and the type of monomer used as a gas in the self-assembly process. Therefore, it can be manufactured by adjusting freely from as low as 200 Ω / □ to as high as 10 ⁸ Ω / □, and can be used as an electrode material of medium resistance or lower as well as antistatic and antistatic functions.

As described above, the present invention is a method of performing photolithography using a new method of self-assembly, without using any photoresist and developer used in the conventional photolithography (photo process). In addition to the drastic reduction of material costs, the process time can be significantly reduced by 50% or more, thereby reducing the manufacturing cost compared to the conventional method. In addition, it is excellent in thin film properties and can freely adjust the electrical conductivity can be applied to a variety of applications such as electrode materials, circuit board materials, as well as semiconductor processing.

Claims (20)

Iii) preparing a coated substrate coating the substrate with a nanometer (nm) thickness of a photosensitive inorganic oxidant which acts as a catalyst or oxidant; Ii) irradiating selective UV light or visible light with an exposure apparatus by applying a photo mask including a circuit to the substrate coated with the photosensitive inorganic oxidizing agent to form a primary circuit in the light exposure portion; Iii) forming a circuit by contacting the substrate on which the primary circuit is formed with a monomer in a gaseous state and selectively growing a polymer thin film on a portion exposed to UV light or visible light and an unexposed portion on the surface of the substrate. Completing; And Iii) a water washing step of removing impurities or unreacted substances from the substrate on which the circuit formation is completed, self-assembly lithography patterning method. The method of claim 1, wherein the substrate is selected from the group consisting of glass, silicon, metal, and plastic. 3. The method of claim 2 wherein the plastic substrate is a transparent plastic selected from the group consisting of polyesters, polycarbonates, polyimides, polyethersulfones, TACs, COC polymers and polyesters. The method of claim 1, wherein the photosensitive inorganic oxidizing agent is composed of a copper oxidant or a trivalent iron compound (Fe ⁺³ ). The photosensitive oxidizing agent of claim 4, wherein the photosensitive oxidizing agent composed of a copper oxidant or a trivalent iron compound (Fe ⁺³ ) is CuCl ₃ , Cu (ClO ₄ ) ₂ .6H ₂ O, FeCl ₃ and ferric toluenesulfonate (Ferric p-Toluene). Self-assembled lithography circuit formation method, characterized in that it is selected from the group consisting of sulfonates. The method of claim 1, wherein the photosensitive oxidant is added with another host polymer material to improve adhesion. The method of claim 1, wherein the other host polymer material is selected from the group consisting of polybutyl acrylate, polycarbonate, polyurethane, polyvinyl chloride, polyvinyl alcohol, polyester, methyl cellulose and chitosan Assembly lithography circuit formation method. 7. The method of claim 6, wherein the host polymer is added at 0.5-10 wt% based on the total weight. 2. The method of claim 1, wherein the exposure machine uses an electron beam or plasma. The method of claim 1, wherein the irradiation of the UV light or visible light of the exposure machine is irradiation of light having a wavelength region between 100 and 500 nm. The method of claim 1, wherein the gaseous monomer is selected from the group consisting of aniline, pyrrole, thiophene, furan, serenophene, 2,3-dihydrocyio-3,4-dioxin and derivatives thereof. Self-assembling lithography circuit forming method. The method of claim 1, wherein the contacting of the substrate on which the primary circuit is formed with a gaseous monomer is carried out in a CVD (chemical vapor deposition) chamber. 13. The method of claim 12, wherein contacting the substrate on which the primary circuit is formed with a gaseous monomer to allow the self-assembled polymer to grow is achieved by contacting the oxidant-coated substrate with the monomer vaporized in a CVD chamber. Self-assembled lithography circuit formation method. 2. The method of claim 1 wherein the removal of unreacted material is with organic solvents or water. 15. The method of claim 14 wherein the organic solvent is selected from the group consisting of methanol, ethanol, acetone, and the like. The method of claim 1, wherein each step of the self-assembled lithography circuit forming method is performed in a discontinuous stepwise process or a continuous process. The method of claim 1, wherein the primary circuit of the photosensitive inorganic oxidant is formed by contact printing or inkjet instead of the formation of the primary circuit of claim 1. A self-assembled lithographic circuit formation method, characterized in that the polymer thin film is selectively grown only on the circuit portion of the inorganic oxidant on the surface of the substrate. 18. A self-assembled lithographic circuit having electrical conductivity made according to the method of any one of the preceding claims. 19. The self-assembling lithography circuit of claim 18, wherein the self-assembling lithography circuit has the following structural formula (1). [Formula 1]

Where X is selected from the group consisting of sulfur (S), oxygen (O), selenium (Se) and NH; R ₁ and R ₂ are hydrogen, an alkyl group containing from 3 to 15 carbons, 3 to 15 Is selected from the group consisting of ethers, halogens and gen groups containing two carbons) 20. The method of claim 18, wherein the self-assembled lithographic circuit of claim 18 or 19 is used as a material for electronic components, flat panel displays or semiconductor processes.