KR100715243B1 - A cutting method for semiconductor element and device therefore - Google Patents

A cutting method for semiconductor element and device therefore Download PDF

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KR100715243B1
KR100715243B1 KR1020060083355A KR20060083355A KR100715243B1 KR 100715243 B1 KR100715243 B1 KR 100715243B1 KR 1020060083355 A KR1020060083355 A KR 1020060083355A KR 20060083355 A KR20060083355 A KR 20060083355A KR 100715243 B1 KR100715243 B1 KR 100715243B1
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cutting
semiconductor device
laser beam
full
laser
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박명순
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주식회사 고려반도체시스템
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

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Abstract

본 발명은 반도체소자의 커팅 방법 및 그 장치에 관한 것으로, 그 목적은 레이저만으로 커팅하기 어려운 두께를 갖는 반도체 소자를 레이저 빔과 브레이드 또는 레이저 빔과 레이저 빔을 사용하여 깔끔하게 커팅할 수 있는 반도체소자의 커팅 방법 및 그 장치를 제공하는 것이며, 그 구성은 상면에 패턴층이 형성되어 있는 반도체 소자의 커팅방법에 있어서, 상기 방법은 레이저빔을 이용하여 2개의 예비커팅선을 패턴층상에 상호 평행하게 형성시키는 예비커팅단계와; 상기 2개의 예비커팅선 사이를 풀커팅 수단에 의해 반도체 소자를 완전커팅하는 풀커팅 단계로 구성되는 것을 특징으로 한다.The present invention relates to a method and a device for cutting a semiconductor device, the object of which is a semiconductor device capable of neatly cutting a semiconductor device having a thickness that is difficult to cut only with a laser using a laser beam and a braid or a laser beam and a laser beam The present invention provides a cutting method and an apparatus thereof, the configuration of which is a cutting method of a semiconductor device having a pattern layer formed on its upper surface, wherein the method uses two laser beams to form two preliminary cutting lines in parallel on the pattern layer. Pre-cutting step of; And a full cutting step of completely cutting the semiconductor device by the full cutting means between the two preliminary cutting lines.

웨이퍼, 레이저, 브레이드, 커팅, 패턴층 Wafer, Laser, Braid, Cutting, Pattern Layer

Description

반도체 소자의 커팅 방법 및 그 장치{A cutting method for semiconductor element and device therefore}A cutting method for semiconductor element and device therefore}

도 1은 본 발명에 따른 반도체 소자의 커팅 공정을 예시한 블록도.1 is a block diagram illustrating a cutting process of a semiconductor device according to the present invention.

도 2 및 도 3은 본 발명에 따른 반도체 소자의 커팅장치를 도식적으로 도시한 도식도.2 and 3 is a schematic diagram showing a cutting device of a semiconductor device according to the present invention.

도 4a 및 도 4b는 본 발명에 따른 반도체 소자의 커팅방법에 의해 반도체 소자를 커팅하는 공정을 예시한 공정도.4A and 4B are process diagrams illustrating a process of cutting a semiconductor device by a method of cutting a semiconductor device according to the present invention;

* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

10: 반도체 소자의 커팅장치 20, 30: 레이저빔 조사구10: cutting device of the semiconductor element 20, 30: laser beam irradiation port

40: 풀커팅수단 50: 반도체 소자40: full cutting means 50: semiconductor element

51: 패턴층 60, 61: 예비커팅선51: pattern layer 60, 61: preliminary cutting line

S100: 예비커팅단계 S200: 풀커팅단계S100: preliminary cutting step S200: full cutting step

본 발명은 반도체 소자의 커팅방법 및 그 장치에 관한 것으로, 더욱 상세하게는 레이저만으로 커팅하기 어려운 두께를 갖는 반도체 소자를 레이저 빔과 브레이드 또는 레이저 빔과 레이저 빔을 사용하여 깔끔하게 커팅할 수 있도록 한 반도체소자의 커팅 방법 및 그 장치에 관한 것이다.The present invention relates to a method and a device for cutting a semiconductor device, and more particularly, a semiconductor device capable of neatly cutting a semiconductor device having a thickness that is difficult to cut with only a laser using a laser beam and a braid or a laser beam and a laser beam. The present invention relates to a method for cutting an element and an apparatus thereof.

일반적으로, 종래의 반도체 소자의 커팅방법은 자재의 절단부를 브레이드를 사용하여 커팅하는 것이었으나, 이러한 종래의 커팅 방법은 반도체 소자(또는 자재)상에 적층형성되어 있는 패턴(paten)이 브레이드의 회전시 반도체 소자로 부터 들뜨거나 절단부위의 패턴이 파손됨으로써 반도체 소자의 불량율이 매우 높았다.In general, the conventional method of cutting a semiconductor device is to cut the cut portion of the material by using a braid. In this conventional cutting method, a pattern formed by stacking a pattern formed on a semiconductor device (or material) is rotated by the braid. The defect rate of the semiconductor device was very high due to the lifting of the semiconductor device and the pattern of the cut portion.

따라서, 본 발명은 상기와 같은 종래의 문제점을 고려하여 안출한 것으로서, 그 목적은 레이저만으로 커팅하기 어려운 두께를 갖는 반도체 소자를 레이저 빔과 브레이드 또는 레이저 빔과 레이저 빔을 사용하여 깔끔하게 커팅할 수 있는 반도체소자의 커팅 방법 및 그 장치를 제공하는 것이다.Accordingly, the present invention has been made in view of the above-described conventional problems, and an object thereof is to cleanly cut a semiconductor device having a thickness that is difficult to cut with only a laser using a laser beam and a braid or a laser beam and a laser beam. The present invention provides a method for cutting a semiconductor device and an apparatus thereof.

상기 본 발명의 목적은 상면에 패턴층이 형성되어 있는 반도체 소자의 커팅방법에 있어서, 상기 방법은 레이저빔을 이용하여 2개의 예비커팅선을 패턴층상에 상호 평행하게 형성시키는 예비커팅단계와; 상기 2개의 예비커팅선 사이를 풀커팅 수단에 의해 반도체 소자를 완전커팅하는 풀커팅 단계로 구성되는 것을 특징으로 하는 반도체 소자의 커팅방법에 의해 달성될 수 있는 것이다.An object of the present invention is a method of cutting a semiconductor device having a pattern layer formed on the upper surface, the method comprises a pre-cutting step of forming two pre-cutting line in parallel on the pattern layer using a laser beam; It can be achieved by a method of cutting a semiconductor device, characterized in that the full cutting step of completely cutting the semiconductor device by the full cutting means between the two pre-cut line.

또한, 본 발명의 목적은 반도체 소자의 커팅장치에 있어서, 상기 커팅장치는 2개의 레이저빔이 수직으로 평행하게 조사되도록 전단부에 상호 평행하게 고정설치되는 2개의 레이저빔 조사구와; 상기 2개의 레이저조사구와 후방으로 간격져서 상기 레이저빔 사이의 공간을 수직으로 커팅하도록 설치되는 풀커팅 수단을 구비하 고; 이송되는 반도체 소자를 2개의 레이저빔으로 2개의 예비커팅선이 형성되도록 예비커팅하고, 뒤이어 2개의 커팅선 사이를 풀커팅 수단에 의해 완전커팅하는 것을 특징으로 하는 반도체 소자의 커팅장치에 의해 달성될 수 있는 것이다.In addition, an object of the present invention is a cutting device of a semiconductor device, the cutting device comprises two laser beam irradiation holes which are fixed in parallel to the front end portion so that the two laser beams are irradiated vertically and parallel; Full cutting means spaced apart from the two laser irradiators to the rear so as to vertically cut the space between the laser beams; The semiconductor device to be transferred is preliminarily cut to form two preliminary cutting lines with two laser beams, and then completely cut between the two cutting lines by full cutting means. It can be.

이하, 첨부된 도면을 참조하여 본 발명에 따른 반도체 소자의 커팅 방법 및 그 장치에 대하여 구체적으로 설명한다.Hereinafter, a method and a device for cutting a semiconductor device according to the present invention will be described in detail with reference to the accompanying drawings.

도 1은 본 발명에 따른 반도체 소자의 커팅 공정을 예시한 블록도이고, 도 2 및 도 3은 본 발명에 따른 반도체 소자의 커팅장치를 도식적으로 도시한 도식도이며, 도 4a 및 도 4b는 본 발명에 따른 반도체 소자의 커팅방법에 의해 반도체 소자를 커팅하는 공정을 예시한 공정도이다.1 is a block diagram illustrating a cutting process of a semiconductor device according to the present invention, Figures 2 and 3 is a schematic diagram showing a cutting device of a semiconductor device according to the present invention, Figures 4a and 4b It is a process chart which illustrates the process of cutting a semiconductor element by the cutting method of the semiconductor element which concerns on this invention.

도 1 내지 도 4b를 참조하면, 본 발명에 따른 반도체 소자의 커팅 방법은 예비커팅단계(S100)와, 풀커팅단계(S200)로 구성된다.1 to 4B, the method of cutting a semiconductor device according to the present invention includes a preliminary cutting step S100 and a full cutting step S200.

상기 예비커팅단계(S100)는 레이저빔을 이용하여 2개의 예비커팅선(60)(61)을 패턴층(51)상에 상호 평행하게 형성시키는데 상기 예비커팅단계(S100)는 반도체 소자(50)의 상면에 적층부착되어 있는 패턴층(51)을 레이저빔을 사용하여 절단함으로서, 풀커팅 시 패턴층(51)이 반도체 소자(50)의 상면으로부터 벗겨지는 등의 파손을 방지하도록 하는 것이다.The preliminary cutting step (S100) forms two preliminary cutting lines 60 and 61 on the pattern layer 51 in parallel with each other by using a laser beam. The preliminary cutting step (S100) includes the semiconductor device 50. By cutting the pattern layer 51 laminated on the upper surface of the substrate by using a laser beam, the pattern layer 51 is prevented from being broken from the upper surface of the semiconductor element 50 during the full cutting.

상기 풀커팅단계(S200)는 상기 2개의 예비커팅선(60)(61) 사이를 풀커팅수단(40)에 의해 커팅하여 반도체 소자(50)를 완전커팅한다.In the full cutting step S200, the two preliminary cutting lines 60 and 61 are cut by the full cutting means 40 to completely cut the semiconductor device 50.

상기 풀커팅수단(40)으로는 레이저 빔 또는 브레이드중 어느 것을 사용하여 도 좋다.The pull cutting means 40 may be any one of a laser beam and a braid.

상기와 같은 본 발명에 따른 반도체 소자의 커팅공정을 실시하는 본 발명의 반도체 소자의 커팅장치(10)는 2개의 레이저빔 조사구(20)(30)와, 풀커팅 수단(40)을 구비한다.The cutting device 10 of the semiconductor device of the present invention, which performs the cutting process of the semiconductor device according to the present invention as described above, includes two laser beam irradiation holes 20 and 30 and a full cutting means 40. .

상기 2개의 레이저빔 조사구(20)(30)는 2개의 레이저빔이 수직으로 평행하게 조사되도록 반도체 소자(50)의 이송구간상에 상기 풀커팅 수단(40) 보다 앞쪽에 상호 평행하게 고정설치된다.The two laser beam irradiation holes 20 and 30 are fixedly installed in parallel with each other in front of the full cutting means 40 on the transfer section of the semiconductor device 50 so that the two laser beams are irradiated vertically and in parallel. do.

상기 풀커팅 수단(40)은 상기 2개의 레이저빔 조사구(20)(30)와 후방으로 간격져서 상기 레이저빔 사이의 공간을 수직으로 커팅하도록 설치되는데 상기 풀커팅 수단(40)으로는 레이저 빔 또는 브레이드 어느 것을 사용하여도 좋다.The full cutting means 40 is installed to cut vertically the space between the laser beams spaced rearward from the two laser beam irradiation holes 20, 30, the full cutting means 40 is a laser beam Alternatively, either braid may be used.

이러한 구성을 갖는 본 발명에 따른 반도체 소자의 커팅장치(10)는 이송되는 반도체 소자(50)를 2개의 레이저빔 조사구(20)(30)로 2개의 커팅선(60)(61)이 형성되도록 예비커팅하고, 뒤이어 2개의 커팅선(60)(61) 사이를 풀커팅 수단(40)에 의해 완전커팅함으로서 패턴층(51)의 손상없이 반도체 소자(50)를 신속하고 안전하게 커팅함으로서 생산성을 향상시킴은 물론 불량율을 크게 줄일 수 있는 것이다.In the cutting device 10 of the semiconductor device according to the present invention having such a configuration, two cutting lines 60 and 61 are formed of two laser beam irradiation holes 20 and 30 for the semiconductor device 50 to be transferred. Pre-cutting as possible, followed by full cutting between the two cutting lines 60 and 61 by the full cutting means 40 to quickly and safely cut the semiconductor element 50 without damaging the pattern layer 51. In addition to improving the defect rate can be greatly reduced.

상기와 같은 구성을 갖는 본 발명에 따른 반도체 소자의 커팅 방법 및 그 장치는 레이저만으로 커팅하기 어려운 두께를 갖는 자재를 레이저 빔과 브레이드 또는 레이저 빔과 레이저 빔을 사용하여 깔끔하게 커팅할 수 있도록 함으로서, 커팅공정에서의 불량율을 최소화할 수 있는 효과를 갖는다.The method and apparatus for cutting a semiconductor device according to the present invention having the above configuration can be cut by using a laser beam and a braid or a laser beam and a laser beam to cleanly cut a material having a thickness that is difficult to cut with only a laser. It has the effect of minimizing the defective rate in the process.

Claims (6)

레이저빔을 이용하여 2개의 평행한 커팅선을 패턴층 상에 형성시키는 예비커팅단계와; 상기 2개의 커팅선 사이를 풀커팅 수단에 의해 커팅하여 반도체 소자를 완전커팅하는 풀커팅 단계로 구성되는 상면에 패턴층이 형성되어 있는 반도체 소자의 커팅 방법에 있어서,A precutting step of forming two parallel cutting lines on the pattern layer by using a laser beam; In the cutting method of a semiconductor device having a pattern layer formed on the upper surface consisting of a full cutting step of cutting between the two cutting lines by a full cutting means to completely cut the semiconductor device, 상기 풀커팅 수단(40)은 레이저빔인 것을 특징으로 하는 반도체 소자의 커팅 방법.And the full cutting means (40) is a laser beam. 삭제delete 삭제delete 2개의 레이저빔이 평행하게 조사되도록 전단부에 상호 평행하게 고정설치되는 2개의 레이저빔 조사구와; 상기 2개의 레이저빔 조사구와 후방으로 간격져서 상기 레이저빔 사이의 공간을 풀커팅하는 풀커팅 수단을 구비하는 반도체 소자의 커팅 장치에 있어서,Two laser beam irradiation holes fixedly installed in parallel to the front end portion such that the two laser beams are irradiated in parallel; In the cutting device of a semiconductor element comprising a full cutting means for full-cutting the space between the laser beam spaced backward from the two laser beam irradiation port, 상기 풀커팅 수단(40)은 레이저빔을 조사하는 레이저빔 조사구인 것을 특징으로 하는 반도체 소자의 커팅 장치.The full cutting means 40 is a cutting device of a semiconductor device, characterized in that the laser beam irradiation port for irradiating a laser beam. 삭제delete 삭제delete
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JP2003197561A (en) * 2001-12-25 2003-07-11 Disco Abrasive Syst Ltd Method for dicing semiconductor wafer

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Publication number Priority date Publication date Assignee Title
KR20010049021A (en) * 1999-11-30 2001-06-15 윤종용 Apparatus for cutting glass substrate and method for cutting thereof
KR20020028704A (en) * 2000-10-11 2002-04-17 마이클 디. 오브라이언 method and device for sawing wafer in fabrication of semiconductor package
JP2003197561A (en) * 2001-12-25 2003-07-11 Disco Abrasive Syst Ltd Method for dicing semiconductor wafer

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