KR100687761B1 - Device holder for mass production of molecular electronic device and method of manufacturing molecular electronic device using the same - Google Patents

Abstract

A device holder for mass production of a molecular electronic device and a method for manufacturing a molecular electronic device using the same are provided to align plural substrates or dies on the device holder together with a mask pattern when an upper electrode is formed. A device holder includes a frame body(12) for supporting a substrate, plural openings(16) formed on the frame body at regular intervals, and plural device supports(14) formed on the frame body at regular intervals for defining the opening. The openings have the same shape and size, and the device supports have the same shape and size. The frame body is made of stainless steel or copper. The frame body and the device support are integrally formed.

Description

Device holder for mass production of molecular electronic device for mass production and method for manufacturing molecular electronic device using same {device holder for mass production of molecular electronic device and method of manufacturing molecular electronic device using the same}

1 is a perspective view showing a schematic structure of a device holder 10 according to a preferred embodiment of the present invention.

2 is a view showing a state that the die is aligned with the element support portion of the element holder according to the present invention.

3 is a partially cutaway exploded perspective view illustrating a portion “A” of FIG. 2.

4 is a flowchart illustrating a method of manufacturing a molecular electronic device according to a preferred embodiment of the present invention.

5A through 5E are cross-sectional views illustrating a method of manufacturing a molecular electronic device according to a preferred embodiment of the present invention in a process sequence.

6 is a photograph showing an example in which a substrate is divided into a plurality of die regions.

7 is a graph showing I-V characteristics measured at various temperatures for molecular electronic devices formed according to the method of the present invention.

<Explanation of symbols for the main parts of the drawings>

10: element holder, 12: frame body, 14: element support, 16: opening, 18: hole, 20: die, 30: shadow mask, 200: silicon substrate, 200A: die, 202: insulating film, 210: lower electrode, 220: insulating film pattern, 220a: nano via hole, 230: SAM, 240: electrode material, 250: upper electrode, 300: shadow mask, 300a: opening.

The present invention relates to a device for manufacturing a molecular electronic device and a method for manufacturing a molecular electronic device using the same, and more particularly, to a device holder for manufacturing a molecular electronic device capable of mass production of a molecular electronic device, and a method for manufacturing a molecular electronic device using the same. It is about.

Current silicon-based semiconductor electronic devices are steadily becoming highly integrated, and this trend is expected to reach its limit in the near future. The reason is that when the electronic device is miniaturized and reaches the nanometer level, it is not only a technical limitation that the basic tendency of the electronic device is lost due to the overheating phenomenon, which is a consequent result of the quantization tunneling phenomenon and the high integration, but also the production for integration. This is because the cost of the facility required for the line expansion has increased astronomically, and thus faces economic limitations.

Recently, research on molecular electronic devices has been actively conducted as a means to overcome this problem. Molecular electronic devices can easily implement high-integration electronic devices at low cost because the electronic devices are manufactured by introducing functional groups at molecular terminals having a length of 1 to 2 nm and self-aligning them to metal electrodes without expensive process equipment. It is expected.

In fact, through the research in the field of molecular electronic devices, various electronic devices such as wire, rectifier, switch, memory, transistor, etc. have been realized. The possibility of overcoming the technical limitations on the trend of high integration based on

       However, despite these advantages and developments of molecular electronic devices, there are problems in that yield is low due to difficulty in device fabrication and throughput is reduced in device fabrication. This is because the size of the molecule is very small and its handling is very difficult, and since the molecular layer formed on the electrode is very sensitive to thermal and mechanical shock, it is difficult to apply the existing semiconductor manufacturing process as it is.

In the prior art according to an example, a bowl-shaped nanopore is formed on a SiN membrane, a lower electrode is formed in the nanopores from a bottom side of the membrane, and the surface of the lower electrode is exposed from an upper surface of the membrane. A method of manufacturing vertical molecular electronic devices has been proposed by self-assembling organic molecules to form a self-assembled monolayer (SAM) and forming an upper electrode on the SAM. [C. Zhou, M.R. Deshpande, M.A. Reed, and J.M. See Tour, "Nanoscale metal / self-assembled monolayer / metal heterostructures", Applied Physics Letters 71, 611 (1997)]. This technique uses a Micro Electro Mechanical System (MEMS) technology that processes both sides of a substrate to a SiN membrane. The process is tricky because the nanopores must be formed. In addition, due to the complexity of the process, when a plurality of devices are formed at the same time to produce a highly integrated device, a problem due to a decrease in yield and reliability is expected, which is not suitable for mass production.

In another conventional technology, vertical molecules are formed by forming a lower electrode on a substrate, then forming an insulating film thereon, and forming a plurality of via holes in an array form exposing the lower electrode on the insulating film. A method of manufacturing an electronic device has been proposed. In this technique, after forming a monomolecular thin film on the lower electrode surface exposed through the via hole, the upper electrode is formed by using a shadow mask thereon. At this time, since the shadow mask must be aligned with respect to each of the unit devices in which the monomolecular thin films are formed, this is also not suitable for mass production.

The present invention is to solve the above problems in the prior art, it is easy to align the substrate for forming the element and the shadow mask in the manufacture of the vertical molecular electronic device can be used suitably for mass production of molecular electronic devices The present invention provides a device holder for manufacturing a molecular electronic device.

Another object of the present invention is to provide a method for manufacturing a molecular electronic device, in which the manufacturing process is simple and the mass production of the device is easy.

In order to achieve the above object, the device holder for manufacturing a molecular electronic device according to the present invention comprises a frame body for supporting a substrate for forming an element, a plurality of openings repeatedly formed in the frame body at predetermined intervals, and the plurality of openings. And a plurality of element support portions repeatedly formed in the frame body at predetermined intervals so as to define each one.

In an exemplary device holder for manufacturing a molecular electronic device according to the present invention, the plurality of openings may all have the same shape and the same size. In addition, the plurality of device supports may all have the same shape and the same size.

Further, in the device holder for producing an exemplary molecular electronic device according to the present invention, the frame body and the device support are integrally formed.

In order to achieve the above another object, in the molecular device manufacturing method according to the present invention to form a lower electrode on the substrate. An insulating layer pattern on which the plurality of nano via holes exposing a predetermined region of the lower electrode is formed is formed on the lower electrode. A molecule having a thiol or silane group introduced at the end is used to form a self-assembled monolayer (SAM) on the lower electrode exposed through the nano via hole. The predetermined mask pattern and the resultant product on which the SAM is formed are sequentially arranged on the device holder for manufacturing a molecular electronic device according to the present invention as defined above. An upper electrode covering the SAM is formed in a predetermined region of the substrate exposed through the opening of the device holder and the opening of the mask pattern.

The method of manufacturing a molecular device according to the present invention may further include separating the substrate on which the SAM is formed into a plurality of dies by sawing. At this time, in the step of aligning the result of the SAM is formed on the device holder, a plurality of die on which the SAM is formed is placed on the device holder.

Preferably, the upper electrode is formed by a thermal deposition method or an electron beam deposition method.

According to the present invention, for mass production of molecular electronic devices, a plurality of substrates or dies are arranged together with a mask pattern in an element holder that can be fixed to a deposition apparatus when forming an upper electrode. Therefore, it is possible to mass-produce highly integrated nanometer-level fine molecular electronic devices in an easy manner.

Next, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

1 is a perspective view showing a schematic structure of a device holder 10 for manufacturing a molecular electronic device according to a preferred embodiment of the present invention.

Referring to FIG. 1, the element holder 10 for manufacturing a molecular electronic device according to the present invention includes a frame body 12 supporting a substrate for forming an element or a die for forming an element. In the frame body 12, element supports 14 may be repeatedly arranged at predetermined intervals, and the substrates or dies on which the molecular electronic devices are to be formed may be placed in an aligned state, and each of the plurality of element supports 14 may be opened. 16 is formed. That is, a plurality of openings 16 are repeatedly formed in the frame main body 12 at predetermined intervals, and the shapes of the plurality of openings 16 are defined by the plurality of element supporting portions 14, respectively. The deposition target surface on the substrate or die supported by the element support 14 through the opening 16 is exposed.

Preferably, the plurality of device supports 14 are formed to have the same shape and the same size, respectively. In addition, the plurality of openings 16 are also formed to have the same shape and the same size, respectively.

The frame body 12 of the device holder 10 may be made of a material which is easy to process and is less likely to be corroded and deformed, for example, stainless steel, or a metal having excellent thermal conductivity, for example, copper. By forming the frame body 12 from a metal having excellent thermal conductivity, a low temperature deposition process may be effectively performed during the deposition process using the device holder 10. The element support 14 may be integrally formed with the frame body 10 or may be coupled to the frame body by welding or bonding as a separate member. Preferably, the frame body 12 and the element support 14 are made of the same material.

Although the device support 14 and the opening 16 are illustrated as having a rectangular shape in FIG. 1, the present invention is not limited thereto, and shapes and dimensions of a substrate or a die supported by the device support 14 may be provided. And, it can be designed to have a variety of shapes and dimensions depending on the shape and dimensions of the area to be exposed through the opening (16).

The frame body 12 is provided with a hole 18 for fixing the frame body to an element manufacturing apparatus, for example, a deposition apparatus. The frame body 12 may be screwed to the device manufacturing apparatus through the hole 18. The method for fixing the device holder 10 according to the present invention to the device manufacturing apparatus is not limited to the screwing method, it is a matter of course that a variety of methods well known in the art can be applied.

FIG. 2 is a view illustrating a state in which the die 20 is aligned with the element support 14 of the element holder 10 in order to apply the element holder 10 of FIG. 1 to an element fabrication process.

As a specific example, in order to form a pattern of a predetermined shape, for example, an electrode pattern, on the die 20, first, a mask pattern (not shown) in which the predetermined shape of the pattern is implemented is arranged on the device support 14. The die 20 can be aligned thereon. At this time, only a region of the element formation region of the die 20 to form the electrode pattern is exposed through the opening 16 of the element holder 10 and the opening of the mask pattern on the bottom surface of the frame body 10.

3 is a partially cutaway exploded perspective view illustrating a portion “A” of FIG. 2.

3 illustrates a configuration in which a shadow mask 30 having a predetermined shape pattern is interposed between the element support 14 and the die 20 of the device holder 10.

4 is a flowchart illustrating a method of manufacturing a molecular electronic device according to a preferred embodiment of the present invention.

Referring to FIG. 4, in step 110, a substrate for performing a predetermined process required for manufacturing a molecular electronic device is prepared. The substrate may be made of a silicon wafer, a compound semiconductor substrate, a glass or a plastic substrate.

In step 120, a lower electrode is formed on the substrate.

FIG. 5A illustrates a cross-sectional view of the lower electrode 210 formed over the insulating film 202 on the silicon substrate 200. The lower electrode 210 is made of any one metal selected from the group consisting of gold (Au), platinum (Pt), silver (Ag), copper (Cu), nickel (Ni), and palladium (Pd). Can be done.

In operation 130 of FIG. 4, as illustrated in FIG. 5B, an insulating film pattern 220 having a plurality of nano via holes 220a exposing a predetermined region of the lower electrode 210 is formed on the lower electrode 210. .

The insulating layer pattern 220 may be formed of, for example, a silicon oxide layer, a silicon nitride layer, or a combination thereof. The nano via hole 220a may be formed to have a width of several to several tens of nm.

In step 140 of FIG. 4, a self-assembled monolayer (SAM) 230 is formed on the lower electrode 210 exposed through the nano via hole 220a as illustrated in FIG. 5C. A molecule into which a functional group is introduced at the terminal, for example, a thiol or silane group at the terminal is introduced onto the lower electrode 210 by a conventional method well known in the art to form the SAM 230. Can be assembled. As the compound for forming the SAM 230, a compound exhibiting rectification characteristics or hysteresis characteristics, such as a compound consisting of an electron donor-electron accepting thiol group or a silane group, may be used. For example, the SAM 230 is a compound consisting of a nitrophenylene ethinylene thiol group or a silane group; Compounds consisting of rosebengal thiol group or silane group; Azo compounds having a dinitrothiophene group and an aminobenzene group into which a thiol or silane derivative is introduced; And organometallic-thiol or silane derivative compounds in which a terpyridyl group and a metal element (eg, cobalt, nickel, iron, ruthenium) are bonded to each other.

In step 150 of FIG. 4, the substrate 200 on which the SAM 230 is formed is separated into a plurality of dies 200A by using a conventional sawing process. Step 150 may be performed after forming the lower electrode in step 130 but before forming the SAM in step 140. In some cases, step 150 may be omitted.

6 illustrates a photograph of the substrate 200 divided into a plurality of die 200A regions. The sample picture illustrated in FIG. 5 is a stepped insulating film pattern (the insulating film of FIG. 5B) formed on a lower electrode (corresponding to the lower electrode 210 of FIG. 5A) on a 4 inch silicon substrate using a stepper. Corresponding to the pattern 220). As illustrated in FIG. 6, if the device is manufactured at uniform intervals on the wafer using a stepper when manufacturing the molecular electronic device according to the present invention, the device may not only be easy for mass production but also have a device having a regular size. As a result, the shadow mask and the device holder (eg, the device holder 10 of FIG. 1) required to form the upper electrode to be formed in a subsequent process may be manufactured according to a predetermined device size.

In step 160 of FIG. 4, a mask pattern (not shown) and a die 200A are sequentially arranged and placed on the device support 14 of the device holder 10 in the same manner as illustrated in FIG. 3. The die 200A is obtained through a sawing process with respect to the substrate 200, and a plurality of unit devices including a SAM 230 formed in the nano via hole 220a in one die 200A. Is formed. At this time, through the opening 16 of the device holder 10 and the mask pattern, the SAM 230 formed in the die 200A and the area around it, that is, the area where the upper electrode is to be formed are exposed.

5D is a cross-sectional view partially illustrating a state in which the die 200A on which the SAM 230 is formed is aligned with the shadow mask 300, which is a mask pattern, on the support holder 10. The SAM 230 formed in the die 200A through the opening 16 of the device holder 10 and the opening 300a of the shadow mask 300 and the area around the predetermined width W Is exposed.

In operation 170 of FIG. 4, after fixing the device holder 10 in which the shadow mask 300 and the die 200A are supported in the thermal deposition device or the electron beam deposition device, the device holder 10 may be formed by an electron beam deposition method. Electrode material 240, e.g., in a predetermined region (a portion indicated by the width " W " in FIG. 5D) of die 200A exposed through aperture 16 of shadow mask 300 and aperture 300a of shadow mask 300. For example, gold is deposited to form an upper electrode 250 covering the SAM 230.

The upper electrode 250 may be made of a metal such as gold (Au), platinum (Pt), silver (Ag), copper (Cu), nickel (Ni), palladium (Pd), or the like.

As described above, by forming the upper electrode 250 using the device holder 10 according to the method of the present invention, it is possible to easily form the upper electrodes of the plurality of vertical molecular electronic devices through one deposition process. .

7 is a graph showing I (current)-V (voltage) characteristics measured at various temperatures in the range of 83 K (-190 ° C) to 298 K (25 ° C) for the molecular electronic device formed according to the method of the present invention. .

Au electrodes were formed as the lower and upper electrodes in the molecular electronic device used in the evaluation of FIG. 7, and SAMs were formed on the lower electrodes using dodecanethiol molecules. 7 shows measurements for 83 K, 103 K, 123 K, 143 K, 163 K, 183 K, 203 K, 223 K, 243 K, 263 K, 283 K and 298 K, respectively. As can be seen in FIG. 7, the I-V characteristics of the molecular electronic device manufactured using the dodecanethiol molecule were hardly changed with temperature change. From this, it is possible to successfully confirm the tunneling conduction characteristic, which is the conduction mechanism of dodecanethiol.

As can be seen from the above results, according to the method for manufacturing a vertical molecular electronic device according to the present invention, it is confirmed that mass production of molecular electronic devices that provide effective electrical properties is possible by forming the upper electrode using the device holder. Can be.

In the method of manufacturing a molecular electronic device according to the present invention, for mass production of molecular electronic devices, a plurality of substrates or dies are aligned with a mask pattern in an element holder that is fixed to a deposition apparatus when forming an upper electrode. As described above, the plurality of mask patterns and the plurality of substrates or dies are aligned at the same time so that the upper electrode forming process for the plurality of substrates or dies is performed by one deposition process, so that the highly integrated nanometer-level fine molecular electronic device can be easily obtained. It can be mass produced by the method.

In the above, the present invention has been described in detail with reference to preferred embodiments, but the present invention is not limited to the above embodiments, and various modifications and changes by those skilled in the art within the spirit and scope of the present invention. This is possible.

Claims (10)

A frame body for supporting a substrate for forming elements, A plurality of openings repeatedly formed in the frame body at predetermined intervals, And a plurality of element support portions repeatedly formed in the frame body at predetermined intervals so as to define the plurality of openings, respectively. The method of claim 1, And the plurality of openings all have the same shape and the same size. The method of claim 1, The device holder for manufacturing a molecular electronic device, characterized in that the plurality of device support parts all have the same shape and the same size. The method of claim 1, The frame body is a device holder for manufacturing a molecular electronic device, characterized in that made of stainless steel or copper. The method of claim 1, And the frame body and the element support are integrally formed. Forming a lower electrode on the substrate, Forming an insulating layer pattern having a plurality of nano via holes exposing a predetermined region of the lower electrode on the lower electrode; Forming a self-assembled monolayer (SAM) on the lower electrode exposed through the nano via hole using a molecule having a thiol or silane group introduced at the end thereof; Arranging a predetermined mask pattern and the resultant product on which the SAM is formed on the device holder for manufacturing a molecular electronic device according to claim 1; And forming an upper electrode covering the SAM in a predetermined area of the substrate exposed through the opening of the device holder and the opening of the mask pattern. The method of claim 6, Separating the substrate on which the SAM is formed into a plurality of dies by sawing; And arranging the resultant product in which the SAM is formed on the device holder, placing a plurality of dies on which the SAM is formed, respectively, on the device holder. The method of claim 6, And the upper electrode is formed by a thermal deposition method or an electron beam deposition method. The method of claim 8, The upper electrode is made of at least one material selected from the group consisting of gold (Au), platinum (Pt), silver (Ag), copper (Cu), nickel (Ni) and palladium (Pd). Method of manufacturing a molecular electronic device. The method of claim 6, The mask pattern is a method of manufacturing a molecular electronic device, characterized in that the shadow mask is a predetermined pattern is formed.

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