KR100673626B1 - Epoxy resin composition for encapsulating semiconductor device - Google Patents
Epoxy resin composition for encapsulating semiconductor device Download PDFInfo
- Publication number
- KR100673626B1 KR100673626B1 KR1020050135928A KR20050135928A KR100673626B1 KR 100673626 B1 KR100673626 B1 KR 100673626B1 KR 1020050135928 A KR1020050135928 A KR 1020050135928A KR 20050135928 A KR20050135928 A KR 20050135928A KR 100673626 B1 KR100673626 B1 KR 100673626B1
- Authority
- KR
- South Korea
- Prior art keywords
- epoxy resin
- coupling agent
- resin composition
- silane coupling
- group
- Prior art date
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 57
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 57
- 239000000203 mixture Substances 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 29
- 239000000126 substance Substances 0.000 claims abstract description 13
- 125000003916 ethylene diamine group Chemical group 0.000 claims abstract description 11
- 239000004593 Epoxy Substances 0.000 claims abstract description 7
- 150000001412 amines Chemical class 0.000 claims abstract description 5
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000007789 sealing Methods 0.000 claims description 13
- 239000007822 coupling agent Substances 0.000 claims description 9
- 239000011256 inorganic filler Substances 0.000 claims description 5
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 5
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- WIVOCNPGOPKPIU-UHFFFAOYSA-N mercury silane Chemical compound [SiH4].[Hg] WIVOCNPGOPKPIU-UHFFFAOYSA-N 0.000 claims description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 abstract 2
- 125000006274 (C1-C3)alkoxy group Chemical group 0.000 abstract 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010931 gold Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 229910052737 gold Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 206010040844 Skin exfoliation Diseases 0.000 description 6
- 238000000465 moulding Methods 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 229920002545 silicone oil Polymers 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000005011 phenolic resin Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- -1 dimethylaminomethyl Tertiary amines Chemical class 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000011417 postcuring Methods 0.000 description 3
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 239000003063 flame retardant Substances 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000004843 novolac epoxy resin Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000004848 polyfunctional curative Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- JOPOVCBBYLSVDA-UHFFFAOYSA-N chromium(6+) Chemical compound [Cr+6] JOPOVCBBYLSVDA-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229960002887 deanol Drugs 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- GPAYUJZHTULNBE-UHFFFAOYSA-N diphenylphosphine Chemical compound C=1C=CC=CC=1PC1=CC=CC=C1 GPAYUJZHTULNBE-UHFFFAOYSA-N 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000003673 groundwater Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical class C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000000383 hazardous chemical Substances 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000009659 non-destructive testing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- RPGWZZNNEUHDAQ-UHFFFAOYSA-N phenylphosphine Chemical compound PC1=CC=CC=C1 RPGWZZNNEUHDAQ-UHFFFAOYSA-N 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- 229920001299 polypropylene fumarate Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/544—Silicon-containing compounds containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2201/00—Properties
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2666/00—Composition of polymers characterized by a further compound in the blend, being organic macromolecular compounds, natural resins, waxes or and bituminous materials, non-macromolecular organic substances, inorganic substances or characterized by their function in the composition
- C08L2666/66—Substances characterised by their function in the composition
- C08L2666/72—Fillers; Inorganic pigments; Reinforcing additives
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
도 1은 본 발명의 조성물을 포함하는 전기/전자 부품 메이커 및 세트 메이커에서의 전자 부품내 무연(Pb-free)화 하여야 할 대상의 단면도이다.1 is a cross-sectional view of an object to be lead-free (Pb-free) in an electronic component in an electric / electronic component maker and a set maker comprising the composition of the present invention.
본 발명은 반도체 소자 밀봉용 에폭시 수지 조성물에 관한 것으로, 보다 상세하게는 우수한 내땜납성을 가짐과 동시에 구리(Cu) 리드 프레임 및 구리 금속 소자에 니켈-팔라듐(Ni-Pd), 니켈-팔라듐-금(Ni-Pd-Au), 니켈-팔라듐-금/은(Ni-Pd-Au/Ag) 등이 사전 도금(Pre-Plating)된 리드 프레임과의 부착성이 우수한 반도체 봉지재용 에폭시 수지 조성물에 관한 것이다. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin composition for sealing semiconductor devices. More particularly, the present invention relates to nickel (palm) (Ni-Pd) and nickel-palladium- (Cu) lead frames and copper metal elements, while having excellent solder resistance. Epoxy resin composition for semiconductor encapsulant with excellent adhesion to lead frame pre-plated with gold (Ni-Pd-Au), nickel-palladium-gold / silver (Ni-Pd-Au / Ag) It is about.
근래 폐기되는 전기/전자제품 내의 납 성분의 인체에 대한 치명적인 영향이 현실화됨에 따라 국가별로 지하수 1리터당 납 용출량을 0.05 ∼ 0.3mg으로 규제하고 있다. 특히 유럽을 중심으로 납 규제에 대한 법제화가 활발히 진행되고 있으며 환경 유해 물질로서 납, 수은, 카드뮴, 6가 크롬 등의 무기 원소와, 브롬계 유기 난연제 등 6가지를 제한하는 RoHS(Restriction of Hazardous Substances)를 2006년 7월에 전면 시행할 예정이다. In recent years, as the fatal effect of lead on the human body in waste electrical and electronic products has been realized, the amount of lead leached per liter of groundwater is regulated to 0.05 to 0.3 mg. Restriction of Hazardous Substances (RoHS), which is particularly active in Europe, is leading the legislation of lead regulation and restricting six kinds of environmentally harmful substances such as lead, mercury, cadmium, hexavalent chromium, and bromine-based organic flame retardants. ) Will be fully implemented in July 2006.
따라서 규제법이 시행되기 이전에 전기/전자 제품 내 유해물질이 함유된 부품 전부를 환경 친화적으로 교체하여야 하므로 무연(Pb free)제품의 활발한 개발이 필요한 실정이다. Therefore, active development of lead-free products is required because all parts containing harmful substances in electrical / electronic products must be replaced in an environmentally-friendly manner before the enforcement of regulations.
현재 솔더(solder)의 경우 현재 거의 무연 솔더로 진행된 상태이며, 주석-납 도금(Sn-Pb Plating)도 점차 무연화가 진행되고 있는 단계이다. 기존의 주석-납 도금에 대응하여 현재까지 개발되고 있는 무연화 방법은 크게 순주석도금(Pure Sn plating)과 니켈-팔라듐계 사전 도금을 들 수 있다. Solder is currently almost lead-free solder, and tin-lead plating (Sn-Pb Plating) is gradually becoming lead-free. The lead-free methods currently developed in response to the existing tin-lead plating include pure tin plating and nickel-palladium preplating.
일부 대형 반도체 메이커를 중심으로 현재 널리 사용되어 지고 있는 구리 리드 프레임을 순주석도금하는 방법이 적극적으로 검토되고 있는 단계이나 휘스커 문제를 극복하여야 하는 과제가 남아 있어 양산까지는 상당 시간이 소요될 것으로 예상된다. 구리 금속 소자 표면에 니켈-팔라듐계로 사전 도금하는 방법은 이러한 문제점 극복을 위한 대안으로 제시되고 있는데, 특히 유럽을 중심으로 구리 리드 프레임을 구리 금속 소자 표면에 니켈-팔라듐계로 사전 도금한 리드 프레임(일명 PPF; Pre-Plated Frame)으로 대체하는 연구/개발이 활발히 진행되고 있으며 일부 반도체 소자의 경우 이미 PPF로 양산화하고 있는 단계이다. 이러한 PPF를 활용한 반도체 소자는 2005년 이후 큰 폭으로 증가할 것으로 예상되고 있다. It is expected that it will take a long time to mass-produce as the process of actively tin-plating copper lead frames, which is widely used in some large semiconductor manufacturers, is still being considered, but there are challenges to overcome the whisker problem. The method of pre-plating nickel-palladium based on the surface of copper metal elements has been proposed as an alternative to overcome this problem. In particular, a lead frame in which a copper lead frame is pre-plated with nickel-palladium based on copper metal elements on the basis of Europe Research / development to replace PPF (Pre-Plated Frame) is actively underway, and some semiconductor devices are already mass-produced with PPF. Semiconductor devices using such PPFs are expected to increase significantly after 2005.
그러나 PPF 리드 프레임은 기존 구리 리드 프레임에 비하여 에폭시 수지 조성물과의 계면 부착력이 매우 낮아 패키지의 표면 실장 시 높은 용접 온도에 의하여 열충격에 의한 패키지 크랙, 리드 프레임과 에폭시 수지 조성물 간의 박리가 발 생하는 등 반도체 패키지의 신뢰도가 현저하게 저하되는 문제를 안고 있다. However, PPF lead frame has much lower interface adhesion with epoxy resin composition than existing copper lead frame, resulting in package cracks due to thermal shock, peeling between lead frame and epoxy resin composition due to high welding temperature when package surface is mounted. There is a problem that the reliability of the semiconductor package is significantly reduced.
일반적으로 용접 후의 신뢰도 저하를 개선하기 위하여 무기 충전재의 충전량을 증가시켜 저흡습 및 저열팽창화를 달성하여 내땜납성을 향상시킴과 동시에 저점도 수지를 사용하여 고유동성을 유지하는 방법을 적용하나, 용접 처리 후의 신뢰성은 에폭시 수지 조성물의 경화물과 반도체 장치 내부에 존재하는 반도체 소자나 리드 프레임 등의 기재와의 계면의 부착성이 더 큰 영향을 미치게 된다. 만약 이 계면의 부착력이 약하다면 용접 처리 후의 기재와의 계면에서 박리가 발생하고 나아가서는 이 박리에 의하여 반도체 장치에 크랙이 발생하게 되는 것이다. In general, in order to improve the reliability reduction after welding, a method of maintaining high fluidity by using a low viscosity resin while improving the solder resistance by increasing the amount of the inorganic filler to achieve low moisture absorption and low thermal expansion, The reliability after the welding treatment has a greater influence on the adhesion between the cured product of the epoxy resin composition and a substrate such as a semiconductor element or a lead frame existing inside the semiconductor device. If the adhesion of this interface is weak, peeling occurs at the interface with the base material after the welding treatment, and further cracking occurs in the semiconductor device due to this peeling.
종래에는 계면 접착력 향상을 목적으로 아민계 커플링제 등이 수지 조성물에 첨가되어 왔으나(참고: JP2000-304430, JP2000-352727) 무연화에 의한 용접 처리 온도의 상승(215∼240℃에서 260℃로 상승)이나 니켈-팔라듐, 니켈-팔라듐-금 및 니켈-팔라듐-금/은 계 PPF 등의 출현으로 적합한 부착력을 유지하는 데에 한계에 도달하게 되었다. Conventionally, amine coupling agents and the like have been added to resin compositions for the purpose of improving interfacial adhesion (reference: JP2000-304430, JP2000-352727). ), Nickel-palladium, nickel-palladium-gold, and nickel-palladium-gold / silver-based PPF, etc., have reached a limit in maintaining proper adhesion.
본 발명의 목적은 상기와 같은 종래 기술의 문제점을 해결하기 위한 것으로, 반도체 소자, 구리 및 니켈-팔라듐, 니켈-팔라듐-금 및 니켈-팔라듐-금/은 등으로 사전 도금한 금속 리드 프레임 등의 각종 부재와의 부착성을 향상시키고, 기판 실장 시의 내땜납성을 향상시킨 반도체 밀봉용 에폭시 수지 조성물 및 이것을 이용한 반도체 장치를 제공하는 것이다. SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems of the prior art, and includes a semiconductor lead, a metal lead frame pre-plated with copper and nickel-palladium, nickel-palladium-gold and nickel-palladium-gold / silver, and the like. The present invention provides an epoxy resin composition for semiconductor encapsulation, and a semiconductor device using the same, which have improved adhesion to various members and have improved solder resistance at the time of board mounting.
그러므로 본 발명은 새로운 커플링제를 첨가하여 기재와의 부착력을 획기적으로 향상시킴으로써 내납땝성을 크게 향상시킨 반도체 밀봉용 에폭시 수지 조성물을 제공하고자 한다. It is therefore an object of the present invention to provide an epoxy resin composition for semiconductor encapsulation that greatly improves solderability by adding a new coupling agent to significantly improve adhesion to a substrate.
본 발명의 에폭시 수지 조성물은 구리 리드 프레임 및 니켈-팔라듐 계 PPF에 있어서의 부착력을 크게 증가시킴으로써 구리 및 PPF 리드프레임을 사용하는 반도체 패키지의 신뢰도를 획기적으로 향상시킬 수 있는 반도체 소자 밀봉용 에폭시 수지 조성물 및 이를 이용한 수지 밀봉형 반도체 소자 제조에 유용하다. The epoxy resin composition of the present invention can significantly improve the reliability of semiconductor packages using copper and PPF lead frames by significantly increasing the adhesion in copper lead frames and nickel-palladium-based PPF epoxy resin compositions for semiconductor element sealing. And a resin-sealed semiconductor device using the same.
그러므로 본 발명에서는 하기 화학식 1의 화학구조 내에 에틸렌디아민기가 함유된 실란 커플링제를 포함하는 것을 특징으로 하는 반도체 소자 밀봉용 에폭시 수지 조성물이 제공된다. Therefore, the present invention provides an epoxy resin composition for sealing a semiconductor device comprising a silane coupling agent containing an ethylenediamine group in the chemical structure of the following general formula (1).
[화학식1] [Formula 1]
(상기 식에서 R1은 탄소수 1 ∼ 3의 알콕시기이다.)(In the formula, R 1 is an alkoxy group having 1 to 3 carbon atoms.)
상기 화학구조 내에 에틸렌디아민기가 함유된 실란 커플링제의 함량은 전체 에폭시 수지 조성물에 대하여 0.01 ∼ 1 중량%인 것을 특징으로 한다. The content of the silane coupling agent containing an ethylenediamine group in the chemical structure is characterized in that 0.01 to 1% by weight based on the total epoxy resin composition.
상기 화학구조 내에 에틸렌디아민기가 함유된 실란 커플링제에 에폭시 실란 커플링제, 머켑토 실란 커플링제, 아민계 실란 커플링제 및 메틸 트리 메톡시 실란 커플링제로 구성된 군에서 선택되는 1종 이상을 병용하는 것을 특징으로 한다.Combining the silane coupling agent containing an ethylenediamine group in the chemical structure with at least one member selected from the group consisting of an epoxy silane coupling agent, a mercury silane coupling agent, an amine silane coupling agent and a methyl trimethoxy silane coupling agent It features.
상기 커플링제의 총 함량은 0.01 ∼ 1 중량%인 것을 특징으로 한다.The total content of the coupling agent is characterized in that 0.01 to 1% by weight.
상기 반도체 소자 밀봉용 에폭시 수지 조성물은 무기 충전제를 전체 에폭시 수지 조성물 대비 82 ∼ 92중량%로 추가 포함하는 것을 특징으로 한다.The semiconductor resin sealing epoxy resin composition is characterized in that it further comprises an inorganic filler of 82 to 92% by weight relative to the total epoxy resin composition.
이하 본 발명을 상세히 설명하고자 한다.Hereinafter, the present invention will be described in detail.
본 발명에 사용된 화학구조 내에 에틸렌디아민기가 함유된 실란 커플링제는 하기 화학식 1의 구조를 갖는다.The silane coupling agent containing an ethylenediamine group in the chemical structure used in the present invention has a structure represented by the following Chemical Formula 1.
[화학식1] [Formula 1]
(상기 식에서 R1은 탄소수 1 ∼ 3의 알콕시기이다.)(In the formula, R 1 is an alkoxy group having 1 to 3 carbon atoms.)
상기 화학구조 내에 에틸렌디아민기가 함유된 실란 커플링제는 화합물 내에 존재하는 에틸렌디아민기의 특성으로 인하여 구리 리드프레임뿐만 아니라 PPF에 대한 부착력을 크게 향상시켜 반도체 소자의 신뢰성을 향상시키는 작용을 한다. 상기 커플링제의 함량은 전체 에폭시 수지 조성물에 대비하여 0.01 ∼ 1 중량%인 것이 바람직하고, 0.01 ∼ 0.5 중량% 사용하는 것이 보다 바람직하다. 0.01 중량% 미만을 적용한 경우에는 충분한 부착성을 가질 수 없고, 1 중량%를 초과하여 적용한 경우에는 부착성은 향상되지만 전체 에폭시 조성물의 몰딩 작업성이 현저히 저하되는 문제점이 발생할 수 있다. The silane coupling agent containing an ethylenediamine group in the chemical structure greatly improves adhesion to PPF as well as a copper lead frame due to the properties of the ethylenediamine group present in the compound, thereby improving the reliability of the semiconductor device. It is preferable that it is 0.01-1 weight% with respect to the whole epoxy resin composition, and, as for content of the said coupling agent, it is more preferable to use 0.01-0.5 weight%. If less than 0.01% by weight may not have sufficient adhesion, when applied in excess of 1% by weight may improve the adhesion, but may cause a problem that the molding workability of the entire epoxy composition is significantly reduced.
본 발명에서는 상기 화학구조 내에 에틸렌디아민기가 함유된 실란 커플링제 외에 통상의 에폭시 실란 커플링제, 머켑토 실란 커플링제, 아민계 실란 커플링제 및 메틸 트리 메톡시 실란 커플링제로 구성된 군에서 선택되는 1종 또는 2종 이상을 병용하여 사용할 수 있으나 본 발명은 이들에 한정되는 것은 아니다. 상기 커플링제의 총 함량 역시 0.01 ∼ 1 중량%인 것이 바람직하다. In the present invention, in addition to the silane coupling agent containing an ethylenediamine group in the chemical structure, one kind selected from the group consisting of a common epoxy silane coupling agent, a merceto silane coupling agent, an amine silane coupling agent and a methyl trimethoxy silane coupling agent Or two or more kinds may be used in combination, but the present invention is not limited thereto. The total content of the coupling agent is also preferably 0.01 to 1% by weight.
상기 커플링제는 조성물 제조 시 직접 투입하거나, 에폭시 또는 경화제의 용융물에 미리 녹여 분산하여 조성물에 투입하거나, 커플링제를 물과 혼합하여 가수 분해물을 얻은 후 믹서를 이용하여 상온에서 실리카와 교반하여 전처리된 실리카를 얻은 다음 조성물에 투입하여 사용할 수 있다. The coupling agent is added directly during preparation of the composition, or dissolved in a melt of epoxy or hardener in advance and added to the composition, or the coupling agent is mixed with water to obtain a hydrolyzate and then pretreated by stirring with silica at room temperature using a mixer. Silica may be obtained and then used in the composition.
본 발명의 반도체 밀봉용 에폭시 수지 조성물의 에폭시 수지는 다방향족 에폭시 수지, 크레졸 노볼락형 에폭시 수지, 페놀 노볼락형 에폭시 수지, 바이페닐계 에폭시 수지, 비스페놀계 에폭시 수지, 디시클로펜타디엔계 에폭시 수지, 나프탈렌계 에폭시 수지 등의 임의의 에폭시수지를 적어도 한 종 이상 사용한다. The epoxy resin of the epoxy resin composition for semiconductor sealing of the present invention may be a polyaromatic epoxy resin, a cresol novolac epoxy resin, a phenol novolac epoxy resin, a biphenyl epoxy resin, a bisphenol epoxy resin, or a dicyclopentadiene epoxy resin. And at least one arbitrary epoxy resin such as naphthalene epoxy resin.
본 발명의 반도체 밀봉용 에폭시 수지 조성물의 경화제로는 다방향족 페놀 수지, 페놀 노볼락형 수지, 크레졸 노볼락형 수지, 자일록형 수지, 디시클로펜타디엔계 페놀 수지, 나프탈렌계 수지 등의 임의의 페놀 수지를 적어도 한 종 이상 사용한다. As a hardening | curing agent of the epoxy resin composition for semiconductor sealing of this invention, arbitrary phenols, such as a polyaromatic phenol resin, a phenol novolak-type resin, a cresol novolak-type resin, a xyloxic resin, a dicyclopentadiene type phenol resin, a naphthalene type resin, etc. At least one resin is used.
본 발명의 조성물에서 사용 가능한 경화 촉진제는 상기 에폭시 수지와 페놀 수지의 경화반응을 촉진하기 위한 촉매 성분으로, 예를 들면 벤질디메틸아민, 트리에탄올아민, 트리에틸렌디아민, 디메틸아미노에탄올, 트리(디메틸아미노메틸)페놀 등의 3급 아민류; 2-메틸이미다졸, 2-페닐이미다졸 등의 이미다졸류; 트리페닐포스핀, 디페닐포스핀, 페닐포스핀 등의 유기 포스핀류; 테트라페닐포스포니움 테트라페닐보레이트, 트리페닐포스핀 테트라페닐보레이트 등의 테트라페닐보론염 등이 있다. 이 중에서 1종 또는 2종 이상을 병용할 수 있으며, 사용량은 전체 에폭시 수지 조성물에 대하여 0.1 ∼ 0.5 중량%가 바람직하다.The curing accelerator usable in the composition of the present invention is a catalyst component for promoting the curing reaction of the epoxy resin and the phenol resin, for example benzyldimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol, tri (dimethylaminomethyl Tertiary amines such as) phenol; Imidazoles such as 2-methylimidazole and 2-phenylimidazole; Organic phosphines such as triphenylphosphine, diphenylphosphine and phenylphosphine; Tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate. Among these, 1 type, or 2 or more types can be used together and 0.1-0.5 weight% is preferable with respect to the whole epoxy resin composition.
본 발명에서 사용할 수 있는 무기충전제로서는 그 평균입자가 0.1 ∼ 35 ㎛인 용융 또는 합성실리카를 사용하는 것이 바람직하며, 충전량은 조성물 전체에 대해 82 ∼ 92 중량%가 바람직하다.As an inorganic filler which can be used by this invention, it is preferable to use melt or synthetic silica whose average particle is 0.1-35 micrometers, and the filling amount is 82-92 weight% with respect to the whole composition.
본 발명의 조성물에는 필요에 따라 브롬화 에폭시 수지, 산화 안티몬, 금속 수화물 등의 난연제, 고급 지방산, 고급 지방산 금속염, 에스테르계 왁스 등의 이형제, 카본블랙, 유·무기염료 등의 착색제 및 변성 실리콘 오일, 실리콘 파우더, 실리콘 레진 등의 응력완화제 등을 필요에 따라 사용할 수 있다. 이 때 변성 실리콘 오일로는 내열성이 우수한 실리콘 중합체가 좋으며 에폭시 관능기를 갖는 실리콘 오일, 아민 관능기를 갖는 실리콘 오일 및 카르복실 관능기를 갖는 실리콘 오일 등을 1종 또는 2종 이상 혼합하여 전체 에폭시 수지 조성물에 대해 0.05 ∼ 1.5 중량% 사용할 수 있다. The composition of the present invention, if necessary, flame retardants such as brominated epoxy resins, antimony oxide, metal hydrates, release agents such as higher fatty acids, higher fatty acid metal salts, ester waxes, colorants such as carbon black, organic and inorganic dyes, and modified silicone oils, Stress relieving agents, such as silicone powder and silicone resin, etc. can be used as needed. At this time, the modified silicone oil is preferably a silicone polymer having excellent heat resistance, and a silicone oil having an epoxy functional group, a silicone oil having an amine functional group, a silicone oil having a carboxyl functional group, or the like is mixed with one or two or more kinds to the entire epoxy resin composition. 0.05 to 1.5% by weight can be used.
이상과 같은 원재료를 이용하여 에폭시 수지 조성물을 제조하는 일반적인 방법으로는 소정의 배합량을 헨셀믹서나 뢰디게 믹서를 이용하여 균일하게 충분히 혼합한 뒤, 롤밀이나 니이더로 용융 혼련하며, 냉각, 분쇄과정을 거쳐 최종 분말 제품을 얻는 방법이 사용되고 있다. 본 발명에서 얻어진 에폭시 수지 조성물을 사용하여 반도체 소자를 밀봉하는 방법으로써는 저압 트랜스퍼 성형법이 가장 일반적으로 사용되는 방법이나, 인젝션(Injection) 성형법이나 캐스팅(Casting)등의 방법으로도 성형 가능하다. As a general method for producing an epoxy resin composition using the raw materials as described above, a predetermined amount is uniformly mixed sufficiently using a Henschel mixer or a Rodige mixer, followed by melt kneading with a roll mill or a kneader, and cooling and pulverizing. A method of obtaining the final powder product is used. As a method of sealing a semiconductor element using the epoxy resin composition obtained by this invention, the low-pressure transfer molding method is the most commonly used method, It can also be shape | molded by the methods, such as injection molding method and casting.
이하 본 발명을 실시예에 의거 상세히 설명하나, 본 발명이 실시예에 의해 한정되는 것은 아니다.Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited by Examples.
[실시예 1 및 2][Examples 1 and 2]
본 발명의 반도체 소자 밀봉용 에폭시 수지 조성물을 제조하기 위해 표 1에 나타낸 바와 같이 각 성분들을 평량한 뒤, 헨셀 믹서를 이용, 균일하게 혼합하여 분말 상태의 1차 조성물을 제조하였으며, 믹싱 2-롤밀을 이용하여 100℃에서 7분간 용융 혼련한 뒤, 냉각 및 분쇄과정을 거쳐 에폭시 수지 조성물을 제조하였다. To prepare the epoxy resin composition for sealing a semiconductor device of the present invention, as shown in Table 1, each component was weighed, and then uniformly mixed using a Henschel mixer to prepare a powdery primary composition. After melt kneading at 100 ° C. for 7 minutes, an epoxy resin composition was prepared by cooling and pulverizing.
이렇게 하여 얻어진 에폭시 수지 조성물에 대하여 다음과 같은 방법으로 물성 및 신뢰성을 평가하였다. 신뢰성 시험을 위해 구리 금속 소자에 니켈-팔라듐-금이 사전 도금된 리드 프레임으로 구성된 LQFP형 반도체 소자를 이용하였으며, 성형 시에는 MPS(Multi Plunger System) 성형기를 이용하여 175℃에서 60초간 성형시킨 후, 175℃에서 4시간 동안 후경화시켜, LQFP형 반도체 소자를 제작하였다.About the epoxy resin composition thus obtained, physical properties and reliability were evaluated by the following method. For reliability test, LQFP type semiconductor device composed of lead frame pre-plated with nickel-palladium-gold on copper metal device was used.In molding, after molding at 175 ℃ for 60 seconds using MPS (Multi Plunger System) molding machine, And post-curing at 175 ° C. for 4 hours to fabricate an LQFP semiconductor device.
본 발명에 의한 에폭시수지 조성물의 물성 및 신뢰성 시험결과를 표 2에 나타내었다. 신뢰성 시험은 프리컨디션 조건 하에서의 다이의 박리 및 패키지 크랙 발생 정도로 나타내었다. Table 2 shows physical and reliability test results of the epoxy resin composition according to the present invention. Reliability testing was indicated to the extent of die peeling and package cracking under precondition conditions.
[물성평가 방법][Property evaluation method]
* 스파이럴 플로우(Spiral Flow): EMMI규격을 기준으로 금형을 제작하여 성형온도175℃, 성형압력 70Kgf/㎠에서 유동 길이를 평가하였다.* Spiral Flow (Spiral Flow): The mold was manufactured based on the EMMI standard, and the flow length was evaluated at a molding temperature of 175 ° C. and a molding pressure of 70 Kgf / cm 2.
* 유리전이온도(Tg): TMA(Thermomechanical Analyzer)로 평가하였다.* Glass transition temperature (Tg): evaluated by TMA (Thermomechanical Analyzer).
* 부착력: 측정하고자 하는 구리 금속 소자를 부착 측정용 금형에 맞는 규격으로 준비하고, 준비된 구리 금속 시편에 니켈-팔라듐-금 및 니켈-팔라듐-금/은을 도금한 시험편을 준비하였다. 이렇게 준비된 금속 시험편에 측정 대상인 에폭시 수지 성형물을 금형온도 170 ∼ 180℃, 이송압력 1000psi, 이송속도 0.5 ∼1.0 cm/sec, 경화시간 120초의 조건으로 성형하여 경화물을 얻은 후, 시편을 170 ∼ 180℃의 오븐에 넣어 4시간 동안 후경화 시킨 직후와, 60℃, 60% 상대습도 조건 하에서 120시간 동안 방치시킨 후 260℃에서 30초 동안 IR 리플로우를 3회 통과시킨 후의 부착력을 각각 측정하였다. 이때 금속 시편에 닿는 에폭시 수지 조성물의 면적은 40±1㎟이며 부착력 측정은 각 측정 공정 당 10개 이상의 시편에 대하여 UTM을 이용하여 측정하였다.* Adhesion: A copper metal element to be measured was prepared in a standard suitable for an adhesion measurement mold, and a test piece plated with nickel-palladium-gold and nickel-palladium-gold / silver was prepared on the prepared copper metal specimen. The epoxy resin molded product to be measured was molded to a metal test piece prepared under the conditions of a mold temperature of 170 to 180 ° C., a feed pressure of 1000 psi, a feed rate of 0.5 to 1.0 cm / sec, and a curing time of 120 seconds to obtain a cured product. Immediately after post-curing for 4 hours in an oven at ℃ ℃, and left for 60 hours at 60 ℃, 60% relative humidity conditions for 120 hours, and then the adhesion after passing three times of IR reflow for 30 seconds at 260 ℃. At this time, the area of the epoxy resin composition in contact with the metal specimen is 40 ± 1 mm 2 and the adhesion was measured using UTM for 10 or more specimens per measurement process.
* 내크랙성 평가(신뢰성 시험): 구리 금속 소자에 니켈-팔라듐-금이 사전 도금된 리드 프레임으로 구성된 LQFP형 반도체 소자를 측정 대상인 에폭시 수지 조성물을 이용하여 조립한 후 175℃에서 4시간 동안 후경화하였다. 이러한 LQFP형 반도체 소자를 125℃에서 24시간 건조시킨 후, 60℃, 60% 상대습도 조건 하에서 120시간 동안 방치시킨 후 260℃에서 30초 동안 IR 리플로우를 3회 통과시켜 프리컨디션 이후의 패키지 외관 크랙발생 유무를 광학현미경으로 평가하였다. 또한 비파괴 검사기인 SAT(Scanning Acoustic Tomograph)를 이용하여 에폭시 수지 조성물과 리드 프레임간의 박리 발생 유무를 평가하였다. * Crack resistance evaluation (reliability test): After assembling an LQFP type semiconductor device composed of a lead frame pre-plated with nickel-palladium-gold on a copper metal device by using an epoxy resin composition to be measured, it is after 4 hours at 175 ° C. Cured. The LQFP type semiconductor device was dried at 125 ° C. for 24 hours, then left at 60 ° C. and 60% relative humidity for 120 hours, and then passed through three times of IR reflow for 30 seconds at 260 ° C. for package appearance after preconditioning. Crack occurrence was evaluated by optical microscope. In addition, the presence of delamination between the epoxy resin composition and the lead frame was evaluated by using a non-destructive testing machine, SAT (Scanning Acoustic Tomograph).
1) bis[(3-trimethoxysilyl)propyl]-ethylenediamine : (CH3O)3SiCH2CH2NHCH2NHCH2CH2Si(OCH3)3 1) bis [(3-trimethoxysilyl) propyl] -ethylenediamine: (CH 3 O) 3 SiCH 2 CH 2 NHCH 2 NHCH 2 CH 2 Si (OCH 3 ) 3
[비교예 1 및 3][Comparative Examples 1 and 3]
표 1에 나타난 바와 같이 각 성분을 주어진 조성대로 평량하여 실시예와 같은 방법으로 에폭시 수지 조성물을 제조하였으며, 각 물성 및 신뢰성 평가결과를 표 2에 나타내었다. As shown in Table 1, the epoxy resin composition was prepared in the same manner as in Example by weighing each component according to a given composition, and the results of evaluation of physical properties and reliability are shown in Table 2.
상기 표 2에 나타난 바와 같이 본 발명에 의한 에폭시 수지 조성물이 비교예에 비하여 후경화 직후에서와 60℃, 60% 상대습도 조건 하에서 120시간 동안 방치한 뒤 260℃에서 30초 동안 IR 리플로우를 3회 통과시킨 후에서도 충분히 높은 부착력을 가지는 것을 알 수 있었다. 특히 신뢰도 측면에서도 리플로우 후 니켈-팔라듐 계 사전 도금 리드 프레임과의 내박리성이 우수한 반도체 에폭시 수지 조성물을 얻을 수 있었다. As shown in Table 2 above, the epoxy resin composition according to the present invention was left at 120 ° C. for 60 hours at 60 ° C. and 60% relative humidity conditions immediately after post-curing and then subjected to IR reflow for 3 seconds at 260 ° C. as compared with the comparative example. It was found that even after passing through, it had a sufficiently high adhesion. In particular, in terms of reliability, a semiconductor epoxy resin composition having excellent peeling resistance with a nickel-palladium-based preplated lead frame after reflow was obtained.
본 발명의 에폭시 수지 조성물은 사전 도금된 리드 프레임과의 부착력을 향상시켜 신뢰도가 우수한 반도체 봉지용 에폭시 수지 조성물 및 이를 이용한 에폭시 수지 밀봉형 반도체 소자 제조에 유용하다. The epoxy resin composition of the present invention is useful for manufacturing an epoxy resin composition for semiconductor encapsulation having excellent reliability by improving adhesion to a pre-plated lead frame and an epoxy resin encapsulated semiconductor device using the same.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050135928A KR100673626B1 (en) | 2005-12-30 | 2005-12-30 | Epoxy resin composition for encapsulating semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050135928A KR100673626B1 (en) | 2005-12-30 | 2005-12-30 | Epoxy resin composition for encapsulating semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR100673626B1 true KR100673626B1 (en) | 2007-01-24 |
Family
ID=38014708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050135928A KR100673626B1 (en) | 2005-12-30 | 2005-12-30 | Epoxy resin composition for encapsulating semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100673626B1 (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4507447A (en) | 1983-01-05 | 1985-03-26 | Takeda Chemical Industries, Ltd. | Polyurethane adhesive compositions containing oxyacid of phosphorus and silane coupling agent |
US4720515A (en) | 1985-05-17 | 1988-01-19 | Denki Kagaku Kogyo Kabushiki Kaisha | Epoxy resin composition for encapsulating semiconductor |
US5478897A (en) | 1993-04-26 | 1995-12-26 | Takeda Chemical Industries, Ltd. | Polyurethane adhesive compositions |
US6602604B2 (en) | 1999-12-27 | 2003-08-05 | Clariant Finance (Bvi) Limited | Coating composition |
-
2005
- 2005-12-30 KR KR1020050135928A patent/KR100673626B1/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4507447A (en) | 1983-01-05 | 1985-03-26 | Takeda Chemical Industries, Ltd. | Polyurethane adhesive compositions containing oxyacid of phosphorus and silane coupling agent |
US4720515A (en) | 1985-05-17 | 1988-01-19 | Denki Kagaku Kogyo Kabushiki Kaisha | Epoxy resin composition for encapsulating semiconductor |
US5478897A (en) | 1993-04-26 | 1995-12-26 | Takeda Chemical Industries, Ltd. | Polyurethane adhesive compositions |
US6602604B2 (en) | 1999-12-27 | 2003-08-05 | Clariant Finance (Bvi) Limited | Coating composition |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100673630B1 (en) | Epoxy resin composition for encapsulating semiconductor device | |
KR101845147B1 (en) | Epoxy resin composition for encapsulating semicomductor device and semiconductor device encapsulated using the same | |
KR100673626B1 (en) | Epoxy resin composition for encapsulating semiconductor device | |
KR100673629B1 (en) | Epoxy resin composition for encapsulating semiconductor device | |
KR101266536B1 (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same | |
KR100655131B1 (en) | Epoxy resin composition for encapsulating semiconductor device | |
KR100678683B1 (en) | Epoxy resin composition for encapsulating semiconductor device | |
KR100655129B1 (en) | Epoxy resin composition for encapsulating semiconductor device | |
KR101340545B1 (en) | Epoxy resin composition for encapsulating semiconductor device, and semiconductor apparatus using the same | |
KR100616213B1 (en) | Epoxy resin composition for encapsulating a semiconductor device | |
KR101266534B1 (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same | |
KR100826105B1 (en) | Epoxy resin composition for encapsulating semiconductor device | |
KR100836571B1 (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device??using the same | |
KR100614409B1 (en) | Epoxy resin composition for encapsulating semiconductor device | |
KR100779903B1 (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same | |
KR102052197B1 (en) | Epoxy resin composition for encapsulating semicomductor device and semiconductor device encapsulated by using the same | |
KR100826107B1 (en) | Epoxy resin composition for encapsulating semiconductor device | |
KR100923443B1 (en) | Epoxy resin composition for encapsulating semiconductor device?and semiconductor device using the?same | |
KR100953822B1 (en) | Epoxy resin composition for encapsulating semiconductor device?and semiconductor device?using the same | |
KR101943698B1 (en) | Epoxy resin composition for encapsulating semicomductor device and semiconductor device encapsulated using the same | |
JP4581456B2 (en) | Epoxy resin composition and semiconductor device | |
KR101309818B1 (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same | |
KR20120073017A (en) | Epoxy resin composition for encapsulating semiconductor device, and semiconductor apparatus using the same | |
KR100834069B1 (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device??using the same | |
KR20080062440A (en) | Epoxy resin composition for encapsulating semiconductor device and semiconductor device using the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20101221 Year of fee payment: 5 |
|
LAPS | Lapse due to unpaid annual fee |