KR100659089B1 - Tft and fabrication method thereof and flat panel display with tft - Google Patents

Abstract

A TFT, its fabricating method, and a flat panel display having a TFT are provided to prevent pattern errors due to particles by electro-depositing organic particles on a surface of a semiconductor layer. An organic material is formed on an upper surface of a substrate(210). A patterning process is performed to pattern the organic material. An electro-deposition process is performed to electro-deposit organic particles generated in an organic material patterning process. The organic material is patterned by using a laser ablation process. The electro-deposition process is performed using an organic solvent(21). The organic solvent includes acetone.

Description

Thin film transistor and its manufacturing method and flat panel display device with thin film transistor TECHNICAL FIELD

1 is a cross-sectional view of a conventional organic thin film transistor,

2 is a cross-sectional view of an organic thin film transistor having a top gate structure according to an embodiment of the present invention;

3A to 3E are cross-sectional views illustrating a method of manufacturing an organic thin film transistor according to an embodiment of the present invention;

4A to 4D are plan views illustrating patterns of organic semiconductor layers in an organic thin film transistor according to an exemplary embodiment of the present invention;

5 is a cross-sectional view of an organic thin film transistor having a bottom gate structure according to another embodiment of the present invention;

6A to 6D are cross-sectional views of an organic thin film transistor having a bottom gate structure according to another embodiment of the present invention;

7 is a cross-sectional view of an organic light emitting display device according to an embodiment of the present invention;

8 is a cross-sectional view of an organic light emitting display device according to another embodiment of the present invention;

Explanation of symbols on the main parts of the drawings

200, 300: organic thin film transistor 400, 500: organic light emitting display device

210, 310, 410, 510: substrate 230, 350, 430, 550: semiconductor layer

221, 225, 341, 345, 421, 425, 541, 545: source / drain electrodes

240, 330, 440, 530: gate insulating film

250, 320, 451, 530: gate 460, 560: protective film

The present invention relates to an organic thin film transistor, and more specifically, by depositing particles generated during patterning of an organic semiconductor layer through a laser ablation process using an organic solvent, to prevent pattern defects caused by particles and to prevent organic semiconductor layers. The present invention relates to an organic thin film transistor capable of flattening a surface and a method of manufacturing the same.

In general, a flexible organic light emitting display device uses a flexible substrate as a substrate, and the flexible substrate includes a plastic substrate. Since plastic substrates have very poor thermal stability, it is required to manufacture organic light emitting display devices using low temperature processes.

As a driving device used in such a flexible organic light emitting display device, an organic thin film transistor capable of a low temperature process has been in the spotlight. The organic thin film transistor is being actively researched as a driving device of a next generation display device.

The organic thin film transistor (OTFT) uses an organic film instead of a silicon film as a semiconductor layer, and according to the material of the organic film, a low molecular organic thin film transistor such as oligothiophene, pentacene, etc. It is classified into a polymer organic thin film transistor such as polythiophene series.

Korean Patent Laid-Open Publication No. 2004-0028010 discloses a pentacene thin film transistor that can shorten thin film deposition time and improve hole mobility. Korean Patent Publication No. 2004-0084427 relates to a device structure of an organic thin film transistor capable of improving the electrical performance of the transistor and a method of manufacturing the same. In addition, Japanese Patent Laid-Open No. 2003-92410 discloses a thin film transistor in which a channel region is composed of an organic compound having a radical, thereby improving carrier mobility and on / off current ratio.

1 illustrates a cross-sectional view of a conventional organic thin film transistor, and the conventional organic thin film transistor 100 has a top gate structure.

Referring to FIG. 1, a source electrode 121 and a drain electrode 125 are formed on a substrate 110, and the semiconductor layer 130 is in contact with the source electrode 121 and the drain electrode 125 on a substrate. Is formed. A gate insulating layer 140 is formed on the substrate, and a gate 150 is formed on the gate insulating layer 140. In this case, a portion of the semiconductor layer 130 between the source electrode 121 and the drain electrode 125 serves as a channel region 135, and the gate 150 is formed to correspond to the channel region 135. do.

In a conventional organic thin film transistor having a structure as described above, the semiconductor 130 includes an organic semiconductor layer, and the organic semiconductor layer 150 is formed entirely on the substrate without being patterned. Therefore, carriers, for example holes, accumulate between the organic thin film layers, causing unwanted leakage current to flow, thereby degrading the off characteristics of the thin film transistors, thereby degrading reliability of the device.

To solve this problem, a method of separating the channel region by patterning the organic semiconductor layer of the organic thin film transistor has been proposed. Conventionally, the channel region is separated by etching the organic semiconductor layer using a laser ablation method or the like.

However, when the organic semiconductor layer is patterned using a laser ablation method or the like, organic particles are present on the surface of the organic semiconductor layer, and the organic particles not only contaminate the surface of the organic semiconductor layer but deteriorate the characteristics of the device. Rather, there is a problem of causing a defect in the pattern and lowering the reliability of the device.

In addition, the surface of the organic semiconductor layer is bent by the particles generated after the patterning process, the surface bending of the organic semiconductor layer is a problem that causes a process defect such as the generation of streaks during the spin process in the subsequent process There was this.

The present invention is to solve the problems of the prior art as described above, by preventing the pattern defects caused by the particles by electrodepositing the particles generated during the patterning of the organic semiconductor layer through a laser ablation process using an organic solvent and organic It is an object of the present invention to provide an organic thin film transistor capable of flattening the surface of a semiconductor layer and a method of manufacturing the same.

SUMMARY OF THE INVENTION An object of the present invention is to provide an organic thin film transistor and a method of manufacturing the same, which have improved leakage current by reducing leakage current.

Another object of the present invention is to provide a flat panel display device having a thin film transistor in which particles are deposited on a surface of a semiconductor layer, thereby preventing pattern defects and improving device characteristics.

In order to achieve the above object, the present invention comprises the steps of forming an organic material on the substrate; Patterning the organic material; It is characterized in that it provides an organic film patterning method comprising the step of electrodepositing the organic particles generated during the patterning of the organic material.

The organic material is patterned through a laser ablation process.

Electrodepositing the organic particles includes carrying out using an organic solvent. The organic solvent includes acetone.

The organic substance is pentacene, tetracene, tetratracene, anthracene, naphthalene, alpha-6-thiophene, perylene and its derivatives, rubrene and its derivatives. , Coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dianhydride and its derivatives, polythiophenes and their derivatives Derivatives, polyparaperylenevinylene and derivatives thereof, polyfluorene and derivatives thereof, polythiophenevinylene and derivatives thereof, polyparaphenylene and derivatives thereof, polythiophene-heterocyclic aromatic copolymers and derivatives thereof, naphthalene Oligoacenes and derivatives thereof, oligothiophenes and derivatives thereof of alpha-5-thiophene, phthalocyanine and derivatives thereof with or without metal, pyromellitic dianhi Rides and derivatives thereof, pyromellitic diimides and derivatives thereof, perylenetetracarboxylic dianhydride and derivatives thereof, naphthalene tetracarboxylic acid diimide and derivatives thereof, naphthalene tetracarboxylic dianhydride and derivatives thereof It includes the material selected.

The present invention also includes a process of forming a semiconductor layer having a gate, a source electrode, a drain electrode, and a channel region on a substrate, wherein the process of forming the semiconductor layer comprises: forming an organic material on the substrate; Patterning the organic material to form the semiconductor layer; It provides a method of manufacturing a thin film transistor comprising the step of electrodepositing particles generated during the patterning process of the organic material on the surface of the semiconductor layer.

The semiconductor layer has a groove-shaped separation pattern for separating the channel region.

Electrodeposition of the particles includes the use of an organic solvent. The organic solvent for electrodelizing the particle includes acetone.

The present invention also includes a process of forming a semiconductor layer having a gate, a source electrode, a drain electrode, and a channel region on a substrate, wherein the process of forming the semiconductor layer comprises: forming an organic material on the substrate; Patterning the organic material to form the semiconductor layer; It provides a method of manufacturing a thin film transistor comprising the step of planarizing the surface of the semiconductor layer.

The planarization process may include planarizing the surface of the semiconductor layer by electrodepositing particles generated during the patterning process of the organic material on the surface of the semiconductor layer. The planarization process uses an organic solvent, and preferably, the organic solvent includes acetone.

The present invention also provides a thin film transistor including a gate, a source electrode and a drain electrode formed on a substrate, and a semiconductor layer, the semiconductor layer including a channel region, the organic particles are electrodeposited on the surface thereof. do.

The semiconductor layer includes an organic semiconductor material and includes a separation pattern in the form of a groove for separating the channel region.

In addition, the present invention provides a thin film transistor which is formed on a substrate and includes a gate, source and drain electrodes, and a semiconductor layer; A display element formed on the substrate and including a pixel electrode connected to one of a source electrode and a drain electrode of the thin film transistor, wherein the semiconductor layer includes a channel region, and an organic particle is electrodeposited on a surface thereof It is characterized by providing a flat panel display device.

The thin film transistor includes an organic material and includes an organic semiconductor layer having a separation pattern for separating the channel region.

The display device includes a lower electrode, which is the pixel electrode, an upper electrode facing the lower electrode, and an organic light emitting diode including an organic layer between the lower electrode and the lower electrode.

Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.

2 illustrates a cross-sectional view of an organic thin film transistor according to an exemplary embodiment of the present invention. The organic thin film transistor 200 of FIG. 2 has a top gate structure.

Referring to FIG. 2, a source electrode 221 and a drain electrode 225 are formed on the substrate 210, and the semiconductor layer 230 is formed to contact the source electrode 221 and the drain electrode 225. . A gate insulating layer 240 is formed on the semiconductor layer 230, and a gate 250 is formed on the gate insulating layer 240.

The substrate 210 may include a glass substrate, a plastic substrate, or a metal substrate. The metal substrate preferably includes SUS (steel use stainless). The plastic substrate is preferably polyethersulphone (PES), polyacrylate (PAR, polyacrylate), polyetherimide (PEI, polyetherimide), polyethylene naphthalate (PEN, polyethyelenen napthalate), polyethylene terephthalate (PET, polyethyeleneterepthalate, polyphenylene sulfide (PPS), polyallylate, polyimide, polycarbonate (PC), cellulose tri acetate (TAC), cellulose acetate propinonate: Plastic film selected from the group consisting of CAPs.

 The semiconductor layer 230 includes a channel region 235 corresponding to the gate 250 and a separation pattern 237 for separating the channel region 235. The isolation pattern 237 is to separate the channel region 235 of the semiconductor layer 230 from the channel region of a neighboring thin film transistor (not shown), and has a groove shape.

4A through 4D are plan views illustrating examples of the separation pattern 237 for separating the channel region 235 of the semiconductor layer 230 in the organic thin film transistor according to the exemplary embodiment of the present invention. will be.

4A to 4D illustrate only thin film transistors connected to the gate line 201 and the data line 203 of the thin film transistors constituting one pixel of the organic light emitting display device. Although the exemplary embodiment of the present invention is illustrated as being applied to a thin film transistor of a pixel, the present invention is not necessarily limited thereto.

Referring to FIG. 4A, the separation pattern 237 includes a groove in a closed curve surrounding the channel layer 235 and is in the pixel region 205 defined by the gate line 201 and the data line 203. Are arranged. The isolation pattern 237 separates the channel layer 235 from a thin film transistor (not shown) arranged in the adjacent pixel region 205a.

As another example, the separation pattern 237 may be formed to overlap the gate line 201 or the data line 203 beyond the pixel area 205 or may be formed to be adjacent to the neighboring pixel area 205a. It is possible.

Referring to FIG. 4B, the separation pattern 237 has a pair of parallel grooves extending along the gate line 201, and the channel layer 235 has a pair of channels in the pixel region 205. It is formed so as to be separated from the thin film transistor (not shown in the figure) which is located between the parallel grooves 237 and arranged in the adjacent pixel region 205a. In this case, the channel region 235 of the semiconductor layer 230 is separated from the channel layer of the thin film transistor constituting a pixel arranged in a neighboring gate line among the plurality of gate lines.

As another example, a pair of parallel grooves, which are the separation patterns 237, extends along the gate line 201 across the pixel area 205a adjacent to the pixel area 205 beyond the corresponding pixel area 205 to form the channel layer. 235 may be separated from the thin film transistor arranged in the pixel region 205a.

Referring to FIG. 4C, the separation pattern 237 has a pair of parallel grooves extending along the data line 203, and the channel layer 235 has a pair of channels in the pixel region 205. It is formed so as to be separated from the thin film transistor (not shown in the figure) which is located between the grooves on the parallel line and arranged in the neighboring pixel region 205a.

In this case, the channel region 235 of the semiconductor layer 230 is separated from the channel layer of the thin film transistor constituting a pixel arranged in a neighboring data line among the plurality of data lines.

As another example, the separation pattern 237 is formed along the data line 203 through a pair of parallel grooves extending out of the corresponding pixel area 205 over the adjacent pixel area 205a to form the channel layer. 235 may be separated from the thin film transistor arranged in the pixel region 205a.

Referring to FIG. 4D, the separation pattern 237 includes two pairs of parallel grooves which cross each other and extend along the gate line 201 and the data line 203. The separation pattern 237 is a thin film transistor (not shown in the drawing) in which the channel layer 235 is disposed between two pairs of parallel grooves in the pixel region 205 and arranged in the neighboring pixel region 205a. It is formed to be separated from

As another example, the separation pattern 245 extends along the gate line 201 and the data line 203 over the neighboring pixel area 205a beyond the pixel area 205 corresponding to two pairs of parallel grooves. The channel region 235 may be separated from the thin film transistor arranged in the pixel region 205a.

In an embodiment of the present invention, when one thin film transistor is arranged in one pixel region, the thin film transistor arranged in each pixel region is separated from the channel region of the thin film transistor arranged in the neighboring pixel region. Although illustrated to include, but is not limited to this, it is also applicable to a case where a plurality of thin film transistors are arranged in one pixel region. For example, when a plurality of thin film transistors are arranged in one pixel region, a separation pattern of the semiconductor layer may be formed for each pixel region or for each thin film transistor arranged in one pixel region.

Further, in the embodiment of the present invention, the separation pattern is illustrated as having a groove shape in which the semiconductor layer is completely etched to expose a portion of the source electrode and the drain electrode, but the semiconductor layer is not necessarily limited thereto. It is also possible to have a groove shape etched only. In addition, the separation pattern is not limited to the shape shown in FIGS. 4A to 4D, but any structure that separates the channel region of the neighboring thin film transistor may be applicable.

In the semiconductor layer 230, a separation pattern 237 is formed to separate the channel region 235 through a laser ablation process. Particles 239 generated during the laser ablation process for the separation pattern 237 are generated. The particles 239 are electrodeposited on the surface of the semiconductor layer 230 through an electrodeposition process, thereby minimizing the effects of particles. You can do it.

The semiconductor layer 230 includes an organic semiconductor layer and includes pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, perylene, and derivatives thereof. , Rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dianhydride And derivatives thereof, polythiophene and derivatives thereof, polyparaferylenevinylene and derivatives thereof, polyfluorene and derivatives thereof, polythiophenvinylene and derivatives thereof, polyparaphenylene and derivatives thereof, polythiophene-hetero Cyclic aromatic copolymers and derivatives thereof, oligoacenes and derivatives thereof of naphthalene, oligothiophenes and derivatives thereof of alpha-5-thiophene, phthalocyanines with and without metals, and derivatives thereof, Pyromellitic dianhydride and its derivatives, pyromellitic diimide and its derivatives, perylenetetracarboxylic dianhydride and its derivatives, naphthalene tetracarboxylic diimide and its derivatives, naphthalene tetracarboxylic dianhydride Organic membranes selected from the group consisting of lides and derivatives thereof.

The gate insulating layer 240 is composed of a single layer or a multilayer of an organic insulating layer or an inorganic insulating layer, or an organic-inorganic hybrid layer. The insulating film includes at least one inorganic insulating film selected from the group consisting of SiO 2, SiN x, Al 2 O 3, Ta 2 O 5, BST, and PZT.

In addition, the gate insulating layer 240 may be a polyimide (PS), a phenolic polymer, an acrylic polymer, an imide polymer such as polyimide, an arylether polymer, an amide polymer, a fluorine polymer, a p-xylene polymer, At least one organic insulating film selected from the group consisting of vinyl alcohol-based polymer, parylene (parylene).

Although not shown in the drawings, the organic thin film transistor 20 of the present invention may further include a buffer layer between the substrate 210, the source electrode 221, and the drain electrode 225.

3A to 3E are cross-sectional views illustrating a method of manufacturing an organic thin film transistor according to an embodiment of the present invention.

Referring to FIG. 3A, a source electrode 121 and a drain electrode 225 are formed on the substrate 210. The substrate 210 preferably includes a glass substrate, a metal substrate or a plastic substrate. Referring to FIG. 3B, a semiconductor layer 230 is formed on the substrate to be in contact with the source electrode 221 and the drain electrode 225 and include a channel region 235. The semiconductor layer 230 includes an organic semiconductor layer.

Referring to FIG. 3C, the semiconductor layer 230 is etched through a laser ablation process to form a separation pattern 237 for separating the channel layer 235 of the semiconductor layer 230. In this case, the separation pattern 237 has a groove shape as shown in FIGS. 4A to 4D.

In this case, when the semiconductor layer 230 made of an organic material is patterned through a laser ablation process to form a separation pattern 237 for separating the channel region 235, the organic semiconductor layer is illustrated in FIG. 3C. Organic particles 239 are present on the surface of 230. The surface of the organic semiconductor layer 230 is curved due to the presence of the particles 239.

Referring to FIG. 3D, the semiconductor layer 230 is patterned through a laser ablation process, followed by electrodeposition of particles 239 existing on the surface of the semiconductor layer 230 to form a surface of the semiconductor layer 230. Make it electrodeposited. As a result, not only the influence of the particles 239 can be eliminated, but the surface curvature of the semiconductor layer can be eliminated and flattened.

In the electrodeposition process, a substrate including the semiconductor layer 230 patterned is disposed in a bath 20 in which the organic solvent 21 is contained, and then the particles 239 generated during patterning are melted again to form a semiconductor layer ( Electrode on the surface of the substrate. In this case, acetone is preferably used as the organic solvent, and the electrode 20 is preferably subjected to the electrodeposition process in a saturated state by the organic solvent.

Referring to FIG. 3E, an electrodeposition process is performed to deposit the particles 239 on the surface of the semiconductor layer 230, and then form a gate insulating layer 240 on the substrate. Subsequently, when the gate 250 is formed on the gate insulating layer 240 corresponding to the channel region 235 of the semiconductor layer 230, the organic thin film transistor 200 as illustrated in FIG. 2 is obtained.

5 illustrates a cross-sectional view of an organic thin film transistor according to another exemplary embodiment of the present invention. The organic thin film transistor 300 of FIG. 5 has a bottom gate structure.

Referring to FIG. 5, the organic thin film transistor 300 of the present invention includes a gate 320 and a gate insulating layer 330 formed on the substrate 310. A source electrode 341 and a drain electrode 345 are formed on the gate insulating layer 330, and a semiconductor layer 350 is formed in contact with the source electrode 341 and the drain electrode 345.

The substrate 310 may include a glass substrate, a plastic substrate, or a metal substrate. The metal substrate preferably includes SUS (steel use stainless). The plastic substrate is preferably polyethersulphone (PES), polyacrylate (PAR, polyacrylate), polyetherimide (PEI, polyetherimide), polyethylene naphthalate (PEN, polyethyelenen napthalate), polyethylene terephthalate (PET, polyethyeleneterepthalate, polyphenylene sulfide (PPS), polyallylate, polyimide, polycarbonate (PC), cellulose tri acetate (TAC), cellulose acetate propinonate: Plastic film selected from the group consisting of CAPs.

The gate insulating film 330 is composed of a single film or a multilayer film of an organic insulating film or an inorganic insulating film, or an organic-inorganic hybrid film. The insulating film includes at least one inorganic insulating film selected from the group consisting of SiO 2, SiN x, Al 2 O 3, Ta 2 O 5, BST, and PZT.

In addition, the gate insulating layer 330 may be a polyimide (PS), a phenolic polymer, an acrylic polymer, an imide polymer such as a polyimide, an arylether polymer, an amide polymer, a fluorine polymer, a p-xylene polymer, At least one organic insulating film selected from the group consisting of vinyl alcohol-based polymer, parylene (parylene).

 The semiconductor layer 350 includes a channel region 355 corresponding to the gate 320, and a separation pattern 357 for separating the channel region 355. The isolation pattern 357 is to separate the channel region 355 of the semiconductor layer 350 from the channel region of a neighboring thin film transistor (not shown), as shown in FIGS. 4A to 4D. It has a groove shape.

6A through 6D are cross-sectional views illustrating a method of manufacturing an organic thin film transistor having a bottom gate structure according to another exemplary embodiment of the present invention.

Referring to FIG. 6A, a gate 320 is formed on a predetermined portion of the substrate 310, and a gate insulating layer 330 is formed on a substrate including the gate 320. Referring to FIG. 6B, the source electrode 341 and the drain electrode 345 are formed on the gate insulating layer 330, and then the semiconductor layer 350 is formed.

Referring to FIG. 6C, the semiconductor layer 350 is patterned through a laser ablation process to form a separation pattern 357 for separating the channel region 355. In this case, particles 339 are present on the surface of the semiconductor layer 350 when the semiconductor layer 350 is patterned through a laser ablation process.

Referring to FIG. 6D, an electrodeposition process for electrodelizing particles 559 present on the surface of the semiconductor layer 350 is performed. The semiconductor patterned in a bath 30 in which the organic solvent 31 is contained is performed. After the substrate having the layer 350 is disposed, an electrodeposition process is performed to re-dissolve the particles 339 to electrodeposit the surface of the semiconductor layer 330. Preferably, acetone is preferably used as the organic solvent 31, and the inside of the bath 30 is kept saturated by the organic solvent.

7 is a cross-sectional view of an organic light emitting display device having a top gate thin film transistor according to an exemplary embodiment of the present invention. FIG. 7 illustrates an organic light emitting diode and an organic thin film transistor for driving the organic light emitting diode in the organic light emitting diode display 400.

Referring to FIG. 7, a thin film transistor including a source electrode 421, a drain electrode 425, a semiconductor layer 430, and a gate 450 is formed on a substrate 410. The source electrode 421 and the drain electrode 425 are formed on the substrate 410, and the semiconductor layer 430 is formed to contact the substrate 410 between the source electrode 421 and the drain electrode 425. . A gate insulating layer 440 is formed on the substrate, and a gate 450 is formed on the gate insulating layer 450 corresponding to the channel region 435 of the semiconductor layer 430.

The semiconductor layer 430 includes an organic semiconductor material, and a separation pattern 437 for separating the channel region 430 and the channel region 430 between the source electrode 421 and the drain electrode 425. It is provided. Particles 439 generated during the laser ablation process for forming the separation pattern 437 exist on the surface of the semiconductor layer 430, and the particles 439 are electrodeposited on the surface through the electrodeposition process. .

A protective film 460 is formed on the substrate, and an organic light emitting device is formed on the protective film 460. The organic light emitting diode includes a lower electrode 470, an organic layer 490, and an upper electrode 495 connected to the drain electrode 425 of the thin film transistor through the via hole 465 of the passivation layer 460. The lower electrode 470 serves as a pixel electrode and is exposed by the opening 485 of the pixel isolation layer 480.

The lower electrode 470 acts as an anode electrode, and the upper electrode 495 acts as a cathode electrode, but is not limited thereto. The lower electrode 470 acts as a cathode electrode and the upper electrode 495 acts as an anode. It can also act as an electrode. The organic layer 490 includes one or more organic layers selected from a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a hole suppression layer.

7 is a cross-sectional view of an organic light emitting display device having a bottom gate thin film transistor according to another exemplary embodiment of the present invention. 6 illustrates an organic light emitting diode and an organic thin film transistor for driving the organic light emitting diode in the organic light emitting diode display 500.

Referring to FIG. 7, a thin film transistor is formed on the substrate 510. The thin film transistor includes a gate 520, a source electrode 541 and a drain electrode 545 formed on a substrate, and a semiconductor layer 550 formed to contact the source electrode 541 and the drain electrode 545. A gate insulating film 530 is interposed between the gate 520, the source electrode 541, and the drain electrode 545.

The semiconductor layer 550 includes an organic semiconductor material, and a separation pattern 557 for separating the channel region 555 and the channel region 555 between the source electrode 541 and the drain electrode 545. It is provided. Particles 559 generated during the laser ablation process for forming the separation pattern 557 exist on the surface of the semiconductor layer 550, and the particles 559 are electrodeposited on the surface through an electrodeposition process.

An organic light emitting diode is formed on the substrate and is connected to the source electrode 541 of the thin film transistor and the drain electrode 545 of the drain electrode 545 through the via hole 565 on the protective film 560. Is formed. The organic light emitting diode includes an organic light emitting diode including a lower electrode 570, an organic layer 590, and an upper electrode 595 exposed by a portion of the opening 585 of the pixel isolation layer 580.

The lower electrode 570 acts as an anode electrode, and the upper electrode 595 acts as a cathode electrode, but is not necessarily limited thereto. The lower electrode 570 acts as a cathode electrode and the upper electrode 595 acts as an anode. It can also act as an electrode. The organic layer 590 includes at least one organic layer selected from a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and a hole suppression layer.

In the exemplary embodiment of the present invention, the thin film transistor including the top gate and the bottom gate has been described. However, the present invention is not limited thereto, and the thin film transistor using the organic material as the semiconductor layer may be used. In addition, the organic light emitting display device having the organic thin film transistor is not limited to the structure shown in the drawings, it is applicable to the organic thin film transistor having a variety of structures and the organic light emitting display device having the same.

In the exemplary embodiment of the present invention, an organic light emitting display device using an organic thin film transistor as a driving device as a flat panel display device is exemplified, but the organic thin film transistor in which the particles of the present invention are electrodeposited on the surface of the semiconductor layer is flattened. It can also work on a flat panel display device such as a liquid crystal display device using the as a driving element.

In the exemplary embodiment of the present invention, the organic semiconductor layer is patterned through a laser ablation process so as to have a groove shape for separating the channel region, but the present invention is not limited thereto, and the organic semiconductor layer is also applied to the patterning of the organic semiconductor layer in a pattern form. It is possible.

In addition, the present invention has been described a method for electrodepositing particles generated when the organic material is patterned in the manufacturing process of the organic thin film transistor on the surface, but is not necessarily limited to this organic light emitting display device or liquid crystal display using the organic material It is also applicable to a manufacturing method of a flat panel display such as a device.

Although a method of removing organic particles generated when the organic material is patterned using the laser ablation process in the manufacturing process of the organic thin film transistor of the present invention has been described, the organic material is patterned by a process other than the laser ablation process. Of course, it is also applicable to a process for removing organic particles generated in the.

According to an organic thin film transistor and a method of manufacturing the same according to an embodiment of the present invention, by depositing the organic particles generated during the patterning of the organic material by the laser ablation process on the surface of the semiconductor layer through the electrodeposition process, It can prevent the pattern defect.

In addition, particles are deposited on the surface of the semiconductor layer by the electrodeposition process to planarize the surface of the semiconductor layer, thereby reducing surface curvature of the semiconductor layer by the particles. Accordingly, the stripe pattern may be prevented from being formed during the spin coating process for forming a subsequent thin film.

Although the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art will be able to variously modify and change the present invention without departing from the spirit and scope of the invention as set forth in the claims below. It will be appreciated.

Claims (20)

Forming an organic material on the substrate; Patterning the organic material; Electrodepositing the organic particles generated during the patterning of the organic material. The method of claim 1, And the organic material is patterned through a laser ablation process. The method of claim 1, The electrodeposition process is an organic film patterning method, characterized in that performed using an organic solvent. The method of claim 3, The organic solvent patterning method of claim 1, wherein the organic solvent comprises acetone. The method of claim 1, The organic substance is pentacene, tetracene, tetratracene, anthracene, naphthalene, alpha-6-thiophene, perylene and its derivatives, rubrene and its derivatives. , Coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dianhydride and its derivatives, polythiophenes and their derivatives Derivatives, polyparaperylenevinylene and derivatives thereof, polyfluorene and derivatives thereof, polythiophenevinylene and derivatives thereof, polyparaphenylene and derivatives thereof, polythiophene-heterocyclic aromatic copolymers and derivatives thereof, naphthalene Oligoacenes and derivatives thereof, oligothiophenes and derivatives thereof of alpha-5-thiophene, phthalocyanine and derivatives thereof with or without metal, pyromellitic dianhydride Rides and derivatives thereof, pyromellitic diimides and derivatives thereof, perylenetetracarboxylic dianhydride and derivatives thereof, naphthalene tetracarboxylic acid diimide and derivatives thereof, naphthalene tetracarboxylic dianhydride and derivatives thereof An organic film patterning method comprising a selected organic material. Forming a semiconductor layer having a gate, a source electrode, a drain electrode, and a channel region on the substrate; The process of forming the semiconductor layer Forming an organic material on the substrate; Patterning the organic material to form the semiconductor layer; And depositing particles generated during the patterning process of the organic material on the surface of the semiconductor layer. The method of claim 6, And the semiconductor layer has a groove-shaped separation pattern for separating the channel region. The method of claim 6, Electrodepositing the particles is performed using an organic solvent. The method of claim 8, The organic solvent for electrodepositing the particles comprises acetone. Forming a semiconductor layer having a gate, a source electrode, a drain electrode, and a channel region on the substrate; The process of forming the semiconductor layer Forming an organic material on the substrate; Patterning the organic material to form the semiconductor layer; And planarizing the surface of the semiconductor layer. The method of claim 10, And the semiconductor layer has a groove-shaped separation pattern for separating the channel region. The method of claim 10, Wherein the planarization process includes electrodepositing particles generated during the patterning process of the organic material on the surface of the semiconductor layer to planarize the surface of the semiconductor layer. The method of claim 12, The planarization process is a method for manufacturing a thin film transistor, characterized in that using an organic solvent. The method of claim 13, The organic solvent for the planarization process comprises acetone. A gate, a source electrode, a drain electrode, and a semiconductor layer formed on the substrate; The semiconductor layer includes a channel region, and an organic particle is electrodeposited on a surface thereof. The method of claim 15, The semiconductor layer of claim 1, wherein the thin film transistor comprises an organic semiconductor material. The method of claim 16, The semiconductor layer may include a separation pattern having a groove shape for separating the channel region. A thin film transistor formed on the substrate and including a gate, a source and a drain electrode, and a semiconductor layer; A display element formed on the substrate and including a pixel electrode connected to one of a source electrode and a drain electrode of the thin film transistor, The semiconductor layer includes a channel region, and an organic particle is electrodeposited on a surface thereof. The method of claim 18, The thin film transistor includes an organic material and includes an organic semiconductor layer having a separation pattern for separating the channel region. The method of claim 19, The display device includes a lower electrode which is the pixel electrode, an upper electrode facing the lower electrode, and an organic light emitting element including an organic layer between the lower electrode and the lower electrode.

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