KR100653681B1 - plasma source for generating ion - Google Patents

Abstract

The present invention relates to an ion generating plasma source, the ion generating plasma source for generating an ion beam and supplying it to an etching chamber, comprising: a matching box for generating an internal voltage of the ion generating plasma source including a bus bar and a ferrite therein; And a gas supply passage positioned below the matching box and having a gas supply passage formed to supply gas to the etching chamber, and a gas supply passage seated on an upper surface of the spacer and communicating with a gas supply passage of the spacer. A distribution ring, and an insulator interposed between the gas supply distribution ring and the matching box to insulate each other, wherein the gas distribution body for supplying gas into the chamber is formed by separating the gas distribution body into a spacer and a gas supply distribution ring. In the presence of residue after feeding can facilitate its cleaning It was, whereby there is a feature that can prevent the corrosion due to the residue beforehand.

Description

Plasma source for generating ion

1 is a block diagram of a general ion etching apparatus,

2 is an exploded perspective view of a conventional ion generating plasma source,

3 is a cross-sectional view of the coupled state of FIG.

4 is an exploded perspective view of an ion generating plasma source according to an embodiment of the present invention;

5 is a cross-sectional view of the coupled state of FIG.

<Description of Symbols for Main Parts of Drawings>

100 ion generating plasma source 110 gas distributor

110a: spacer 110b, 140a: gas supply passage

120, 130: first and second ring 140: gas supply distribution ring

150, 160: third and fourth ring 170: insulator

180: fifth ring 190: ferrite housing

200: ferrite 210: bus bar

220: matching box 230: gas supply valve

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to ion generating plasma sources, and more particularly to ion generating plasma sources for generating and supplying ion beams to an etching chamber.

1 is a block diagram of a general ion etching apparatus. Referring to FIG. 1, the ion etching apparatus includes an ion generating plasma source 10, an extractor 40, a neutralizer 50, an ion beam 60, and an etching chamber ( 70, a table 80 and a wafer 90, the ion beam 60 generated by the ion generating plasma source 10 is extracted by the extractor 40, and then accelerated to form an etching chamber 70. While passing through the neutralizer 50 in the chopper, the charge is neutral and moves to the wafer 90 seated on the table 80, thereby performing an etching process on the wafer.

The present invention relates to an ion generating plasma source 10 for generating the ion beam 60 of the ion etching apparatus, the configuration of such an ion generating plasma source 10 is shown in FIG.

FIG. 2 is an exploded perspective view of a conventional ion generating plasma source. Referring to FIG. 2, the ion generating plasma source 10 may include a bus bar 18 and a ferrite 17. A built-in lamp and a matching box 19 for generating an internal voltage of the ion generating plasma source 10, and having a ferrite housing 16 for supporting and installing the ferrite 17. ), An insulator 14 and a gas distributor 11 are sequentially installed.

At this time, between the gas distributor 11 and the insulator 14 and between the insulator 14 and the ferrite housing 16, auxiliary rings 12, 13, and 15 for preventing the leakage of gas are additionally installed. In particular, between the gas distributor 11 and the insulator 14, auxiliary rings 12 and 13 composed of two concentric circles having different diameters are provided.

Meanwhile, FIG. 3 is a cross-sectional view of the coupling state of FIG. 2, in which components of a conventional ion plasma source except for the matching box 19 and the ferrite housing 16 are combined. Referring to the coupling state with reference to the following.

First, in the case of the gas distributor 11, a space in the gas distributor 11 through a spacer 11a having a gas supply passage 21 and a gas supply passage 21 of the spacer 11a. It consists of a valve 20 for supplying gas to 30.

In the case of the prior art, since the gas distributor 11 is composed of a single body, the residues generated in the process of supplying gas to the space 30 in the gas distributor 11 may not be smoothly cleaned. There is a problem that corrosion caused by the residues is caused to cause a defect of the product.

In addition, since the gas supply passage 21 of the gas distributor 11 has a structure in which an oxide film is applied, the oxide film is easily peeled off by an impact from the outside in the gas supply process, thereby causing corrosion by the residue. There is a problem.

Therefore, in the present invention, in order to solve the above problems, by separating and forming the gas distribution body for supplying gas into the chamber by the spacer and the gas supply distribution ring, it is easy to wash it in the presence of residue after gas supply. Accordingly, an object of the present invention is to provide an ion generating plasma source capable of preventing corrosion caused by the residue in advance and preventing corrosion in the gas supply passage.

In order to achieve the above object, the ion generating plasma source provided in the present invention is an ion generating plasma source for generating an ion beam and supplying it to an etching chamber, wherein the internal voltage of the ion generating plasma source includes a bus bar and a ferrite. A matching box to be generated, a spacer positioned below the matching box, the gas supply passage being formed to supply gas to the etching chamber, and a gas supply seated on an upper surface of the spacer and in communication with a gas supply passage of the spacer. And an insulator interposed between the gas supply distribution ring having a passage and the gas supply distribution ring and the matching box for mutual insulation.

In particular, the gas supply distribution ring is made of a ceramic, it characterized in that to prevent the supply passage during gas supply.

Hereinafter, with reference to the accompanying drawings will be described in more detail the ion generating plasma source of the present invention.

4 is an exploded perspective view of an ion generating plasma source according to an embodiment of the present invention. Referring to FIG. 4, the ion generating plasma source 100 of the present invention includes a bus bar 210 and a ferrite 200 therein. A ferrite housing 190, an insulator 170, and a gas supply to support and install the ferrite 200, including a matching box 220 that generates an internal voltage of the ion generating plasma source 100, The ring 140 and the gas distributor 110 are sequentially installed.

At this time, the gas distributor 110 and the gas supply ring 140, the gas supply ring 140 and the insulator 170 and to prevent the leakage of gas between the insulator 170 and the ferrite housing 190. An auxiliary ring (120, 130, 150, 160, 180) is additionally installed, in particular, between the gas distribution body 110 and the gas supply ring 140 and the gas supply ring 140 and the insulator 170 In the auxiliary ring 120, 130, 150, 160 consisting of two concentric circles of different diameters are installed.

Meanwhile, FIG. 5 is a cross-sectional view of the coupling state of FIG. 4, in which components of the ion plasma source of the present invention except for the matching box 220 and the ferrite housing 190 are combined.
4 and 5, the gas distributor 110 includes a spacer 110a having a gas supply passage 110b and a gas supply passage 110b of the spacer 110a. It consists of a valve 230 for supplying gas to the space 300 in the gas distribution body 110.

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In addition, the gas distribution ring (GDR) 140 is seated on the upper surface of the spacer 110a through the auxiliary rings 120 and 130, and the gas supply passage 110b of the spacer 110a. ) Is in communication with the gas supply passage (140a).

On the other hand, since the spacer 110a and the gas supply distribution ring 140 are formed of a ceramic resistant to corrosion, corrosion of the gas residues can be prevented.

In the case of the ion generating plasma source of the present invention having such a configuration, since the gas distributor provided for gas distribution is separated and formed into two assemblies, the spacer 110a and the gas supply distribution ring 140, the residue is cleaned. Water washing can be performed quickly within a short time, and in particular, it is possible to stably remove residues on the gas supply passages 110b and 140a formed in the spacer 110a and the gas supply ring 140. Therefore, it is possible to prevent corrosion of the product due to the residue and the occurrence of defects accordingly.

In addition, the gas distributor 110 and the gas supply distribution ring 140, the plurality of auxiliary rings (120, 130, 150, 160) provided between the gas supply distribution ring 140 and the insulator 170 is interposed. Advantageously, gas leakage can be prevented more effectively. In this case, referring to FIGS. 4 and 5, first auxiliary rings 120 and 130 are interposed between the spacer 110a of the gas distributor 110 and the gas supply distribution ring 140. In addition, second auxiliary rings 150 and 160 are interposed between the gas supply distribution ring 140 and the insulator 170.
In addition, a third auxiliary ring 180 is interposed between the insulator 170 and the matching box 220.

As described above, the scope of application of the present invention is not limited thereto, and it will be appreciated by those skilled in the art that the present invention can be appropriately changed within the scope of the present application.

As described above, the ion generating plasma source of the present invention separates the gas distribution body for supplying the gas into the spacer and the gas supply distribution ring so that it can be easily washed through the water in the presence of the residue after the gas supply. Therefore, there is an advantage in that the problem of corrosion due to residues can be prevented in advance, and in particular, the gas supply distribution ring and the spacer are formed of a ceramic to prevent corrosion generated during gas supply.

Claims (3)

An ion generating plasma source for generating an ion beam and supplying it to an etching chamber, A matching box for generating an internal voltage of the ion generating plasma source, including a bus bar and a ferrite therein; A spacer positioned below the matching box and formed with a gas supply passage to supply gas to the etching chamber; A gas supply distribution ring seated on an upper surface of the spacer and having a gas supply passage communicating with the gas supply passage of the spacer; And an insulator interposed between the gas supply distribution ring and the matching box to insulate each other. The gas supply distribution ring of claim 1, wherein An ion generating plasma source, characterized in that consisting of ceramic. The method of claim 1, wherein the ion generating plasma source is A first auxiliary ring interposed between the spacer and the gas supply distribution ring to prevent gas leakage from each other; A second auxiliary ring interposed between the gas supply distribution ring and the insulator to prevent gas leakage between the gas supply distribution ring and the insulator; And a third auxiliary ring interposed between the insulator and the matching box to prevent gas leakage between the insulator and the matching box.

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