KR100649883B1 - Apparatus for cutting ingot - Google Patents

Abstract

An ingot cutting device is provided to improve production efficiency and reduce the production cost by simultaneously working with plural ingots having different silicon determining orientations and to suppress saw marks generated on a produced wafer. An ingot cutting device comprises a plate(14) mounted with plural ingots(1~4) having different silicon determining orientations; an aligning member(16) formed at the plate to be relatively moved along the plane of the plate and contacted on the seed surface of the ingots based on the silicon determining orientations to align the ingots on the mounting surface of the plate; a wire saw cutting the aligned ingots on the mounting surface; and a base frame(10) disposed at the lower side of the plate to support the plate and detachably combined with the plate.

Description

Ingot cutting device {Apparatus for cutting ingot}

1 is a perspective view of an ingot,

2 is a schematic plan view of an ingot cutting device according to the present invention,

3 is a schematic side view of an ingot cutting device according to the present invention;

4 is an arrangement state diagram between an ingot and an ingot support beam.

* Explanation of symbols for the main parts of the drawings

1 ~ 4: Ingot 1a ~ 4a: Seed surface

10: base frame 14: plate

14a: mounting surface 16: alignment member

18: rail coupling portion 20: wire saw

22: ingot support beam

The present invention relates to an apparatus for cutting ingots, and more particularly, to simultaneously cut a plurality of ingots having different silicon crystal orientations so as to increase productivity and lower production costs. An ingot cutting device.

The wafer (Sapphire Wafer), which is a single crystal semiconductor material used in the semiconductor material and the manufacturing process, is formed by cutting an ingot processed into a cylindrical shape into a thin plate-like disk. There are wire saws for cutting ingots with wires in the form of piano strings and I.D saws and O.D saws for cutting using diamond blades.

Compared to I.D Saw and O.D Saw which cuts one by one, wire saws are widely used because they can be mass-produced in one cutting operation and have high productivity, high quality and low defect rate. However, wire saws have the drawback of high equipment cost and process consumables.

As such, a technique for cutting an ingot using a wire saw is disclosed in Korean Patent Application Publication No. 2003-19409 and Publication No. 10-2005-12938. The disclosed techniques place a grinding ingot on a plate, measure the orientation of silicon crystals formed on the ingot seed surface, and then mechanically correct the silicon crystal orientation on the wire saw to cut the ingot. Step on.

However, when cutting the ingot while moving the cutting device equipped with a wire saw as described above, it is impossible to simultaneously cut a plurality of ingots having different silicon crystal orientations. Therefore, production is inevitably low, and production costs are high because they are produced one by one.

In addition, the prior art has a disadvantage in that a saw mark occurs on the wafer because the work must be performed while moving the cutting device equipped with a wire saw.

SUMMARY OF THE INVENTION An object of the present invention is to provide an ingot cutting device capable of simultaneously cutting a plurality of ingots having different silicon crystal orientations, thereby increasing productivity and lowering production cost.

It is another object of the present invention to provide an ingot cutting device which can prevent generation of saw marks on a wafer to be produced.

The object is, according to the present invention, a plate on which a plurality of ingots having different silicon crystal orientations are mounted; Aligning the ingots to the mounting surface of the plate by contacting the seed surface of the ingots are provided to be relatively movable in the plate along the plate surface direction of the plate, and processed based on the silicon crystal orientation (Orientation) Aligning member to make; And a wire saw for cutting the ingots arranged and aligned with the mounting surface.

Here, the plate is positioned below the plate to support the plate, and further includes a base frame to which the plate is detachably coupled. The alignment member may be provided to be movable relative to the base frame. In this case, the ingot mounting work can be performed more smoothly.

A rail coupling part may be provided between the alignment member and the base frame to slide the alignment member with respect to the base frame. This makes it easier to align the ingots.

The plate may further include an ingot support beam mounted on a mounting surface of the plate to support the plurality of ingots.

The ingot support beam includes a beam body corresponding to the length of the ingot and a recess groove formed on one surface of the beam body to prevent the ingot from rotating in an arbitrary direction. Therefore, the ingot is arbitrarily rotated.

Bonding is performed between the mounting surface and the ingot support beam, the ingot support beam and the ingot by a bond. Therefore, the ingot can be supported more stably.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1 is a perspective view of an ingot. As shown in this figure, the ingot 1 has a cylindrical shape and is sliced by a wire saw 20 (see FIG. 3) to be described later to form a wafer.

If the ingot 1 is to be cut, its orientation is required. To this end, flat surfaces 1b, which are ground along the longitudinal direction of the ingot 1, are formed on the side surfaces of the ingot 1, and silicon crystal directions (O, Orientation) are formed on the flat surfaces 1b. Is formed. Therefore, after cutting one side end of the ingot 1 serving as a reference plane based on the silicon crystal orientation (O, Orientation), the cutting operation proceeds. Hereinafter, the end part of the ingot 1 cut | disconnected based on the silicon crystal orientation (O, Orientation) is called seed surface 1a and Seed.

2 and 3 are respectively a schematic plan view and a side view of an ingot cutting device according to the present invention, Figure 4 is a layout diagram between the ingot and the ingot support beam.

As shown in these figures, the ingot cutting device according to the present invention largely has a base frame 10, a plate 14, an alignment member 16, a wire saw 20 and an ingot support beam 22.

Base frame 10 is a supporting lower structure of the cutting device. A plurality of foots 12 supporting the base frame 10 are provided below the base frame 10. The foot 12 is disposed at least in the rectangular composition on the back of the base frame 10 serves to support the base frame 10 more stably. In the cutting operation of the ingots 1 to 4, since the base frame 10 should not be moved, it will be effective that an anti-slip pad or the like is interposed at the end of the foot 12. Of course, the foot 12 may be integrally coupled to a separate cutting device.

The plate 14 is provided on the base frame 10. The plate 14 is detachably coupled to the base frame 10. As a method of attaching and detaching, a bolt coupling or a hook coupling can be adopted.

The upper surface of the plate 14 forms a mounting surface 14a through which the ingots 1 to 4 are mounted through the ingot support beam 22. The mounting surface 14a of the plate 14 should be formed of at least a flat plate-like body. Therefore, the plate 14 will preferably be made of a surface plate.

The alignment member 16 is provided to align the ingots 1 to 4 having different silicon crystal orientations (O) with the mounting surface 14a of the plate 14. The alignment member 16 is disposed vertically along the transverse direction with respect to the mounting surface 14a of the plate 14 to form a reference surface of the ingots 1 to 4. The ingots 1-4 are aligned at the mounting surface 14a by the seed surfaces 1a-4a contacting the plate surface of the alignment member 16.

After mounting a larger number of ingots 1 to 4 on the mounting surface 14a, the alignment member 16 moves along the plate surface direction of the mounting surface 14a to perform one cutting operation. do. That is, the rail coupling portion 18 is provided between the base frame 10 in the lower region of the alignment member 16. The rail coupling portion 18 may have a so-called dovetail type. Accordingly, when the alignment member 16 is pushed or pulled in one direction with respect to the fixed base frame 10, the alignment member 16 may move along the plate surface direction of the mounting surface 14a by the structure of the rail coupling portion 18. Will be.

On the other hand, since the ingots 1 to 4 have a cylindrical shape, it is relatively difficult to put them on the mounting surface 14a of the plate 14 as it is. Thus, as shown in FIG. 4, a separate ingot support beam 22 for supporting the ingots 1 to 4 is used.

The ingot support beam 22 is formed on one side of the beam body 22a and the beam body 22a corresponding to the length of the ingots 1 to 4, and the ingots 1 to 4 are seated thereon, and the ingots 1 to 4 are formed. ) Has a recessed groove 22b for preventing rotation in any direction. Therefore, the ingots 1 to 4 may be disposed on the recessed grooves 22b of the ingot support beams 22, and then the ingot support beams 22 may be placed on the mounting surface 14a. In this case, the ingot support beam 22 may be formed of graphite or graphite.

However, even in this case, the ingot support beam 22 may shake on the mounting surface 14a due to external vibration or external physical factors, and the ingots 1 to 4 may also shake with respect to the ingot support beam 22. have. Therefore, in order to prevent this, between the mounting surface 14a and the ingot support beam 22 and between the ingot support beam 22 and the ingots 1 to 4 are temporarily bonded by the bond B (see FIG. 3). At this time, the bond (B) that can be used may be epoxy or the like.

The bond B serves to temporarily fix the ingot support beam 22 and the ingots 1 to 4. Therefore, when the cutting operation is completed is washed by a separate wash water. Such a bond (B) may use a mixture of so-called hardeners and resins in a ratio of one to two with reference to the bond usage table, but other known ones may be used if necessary.

Referring to a series of processes for manufacturing a wafer (Sapphire Wafer) by cutting the ingots (1-4) in the form of a thin plate shape using an ingot cutting device having such a configuration as follows.

First, in order to measure the silicon crystal orientation (O) formed in the ingots 1 to 4, the side surfaces of the ingots 1 to 4 are ground along the longitudinal direction, thereby flattening the flat surface 1b (see FIG. 1). Flat Surface). The seed surfaces 1a to 4a parallel to the silicon crystal orientations (O) are formed by checking the silicon crystal orientations (O) appearing on the flat surface 1b and processing the ends of the ingots 1 to 4 based on the silicon orientations. Processing. The processed ingots 1 to 4 are placed on the ingot support beams 22 one by one to temporarily fix the ingot support beams 22 and the ingots 1 to 4 as bonds B. At this time, the flat surface 1b is arrange | positioned so that it may face substantially forward.

Next, the plate 14 is fixed to the base frame 10. The alignment member 16 is then placed in the "A" position shown by the dotted line in FIG. The seed surfaces 1a and 2a of the ingots 1 and 2 are brought into contact with the alignment member 16 in the "A" position. When the positions of the ingots 1 and 2 are aligned at the "A" position, the ingot support beam 22 on which the ingots 1 and 2 are placed and the mounting surface 14a of the plate 14 are temporarily bonded. Then, the alignment member 16 is slid to the "B" position through the rail coupling portion 18. When the alignment member 16 reaches the " B " position, the other ingots 3 and 4 are aligned in the " B " position in the above manner, and then the corresponding position is bonded.

Thus, after integrating the seed surfaces 1a to 4a of the ingots 1 to 4 based on the silicon crystal orientation (O, Orientation) and partially bonding the corresponding positions, the ingots 1 to 4 are mounted. Plate 14 is coupled to a cutting device provided with a wire saw 20. Then, by cutting the plurality of ingots 1 to 4 integrally using the wire saw 20, it is possible to manufacture a large amount of wafers (Sapphire Wafer) in one operation.

As such, according to the present invention, simultaneous cutting of a plurality of ingots 1 to 4 having different silicon crystal orientations (O, Orientation) is possible, thereby increasing productivity and lowering production cost. . In addition, instead of moving or rotating the cutting device provided with the wire saw 20, first, the ingots 1 to 4 are aligned and then cut, so that saw marks are prevented from occurring on the wafer to be produced. .

Although the present invention has been described in detail with reference to the drawings, the present invention is not limited thereto.

In the above-described embodiment, four ingots are disclosed. However, this is only one example, and the desired number of ingots may be aligned and mounted on the mounting surface, and then the above operation may be performed.

Although the description is omitted in the above-described embodiment, the alignment member may be moved manually or automatically with respect to the base frame. In order to move the alignment member automatically, a cylinder device or a rack or pinion structure may be employed to operate the motor. This is a universal structure and can be easily designed by those skilled in the art, so detailed drawings will be omitted.

As described above, according to the present invention, an ingot cutting device capable of simultaneously cutting a plurality of ingots having different silicon crystal orientations to increase productivity and lower production costs is provided. .

In addition, there is provided an ingot cutting device that can prevent the occurrence of saw marks on the wafer to be produced because the ingots are aligned after the ingots are moved without moving the cutting device provided with the wire saw.

Claims (6)

A plate on which a plurality of ingots having different silicon crystal orientations are mounted; Aligning the ingots to the mounting surface of the plate by contacting the seed surface of the ingots are provided to be relatively movable in the plate along the plate surface direction of the plate, and processed based on the silicon crystal orientation (Orientation) Aligning member to make; And Ingot cutting device comprising a wire saw for cutting the ingots arranged in the mounting surface. The method of claim 1, Located at the bottom of the plate to support the plate, further comprising a base frame detachably coupled to the plate, Ingot cutting device, characterized in that the alignment member is provided to be movable relative to the base frame. The method of claim 2, Ingot cutting device, characterized in that provided between the alignment member and the base frame rail coupling portion for sliding the alignment member relative to the base frame. The method of claim 1, Ingot cutting device further comprises an ingot support beam mounted on the mounting surface of the plate for supporting the plurality of ingots. The method of claim 4, wherein The ingot support beam A beam body corresponding to the length of the ingot; And Ingot cutting device is formed on one surface of the beam body, characterized in that it comprises a recessed groove for preventing the ingot from rotating in any direction. The method of claim 5, Ingot cutting device, characterized in that the bonding between the mounting surface and the ingot support beam, the ingot support beam and the ingot by a bond.

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