KR100637250B1 - Organic light emitting display apparatus and method of manufacturing the same - Google Patents

Abstract

An organic light emitting display device and a manufacturing method thereof are provided to protect an organic light emitting element and an organic TFT(Thin Film Transistor) by preventing an electric field from being focused on an edge portion of a pixel electrode. A first capacitor electrode, source and drain electrodes, and a pixel electrode(131) are arranged on a substrate(100). A first insulation film(101) includes a first aperture for exposing a portion of the first capacitor electrode, a second aperture for exposing facing portions of the source and drain electrodes, and a third aperture for exposing a portion of the pixel electrode. A gate insulation film(125) is arranged in the second aperture of the first insulation film. An intermediate layer(133) is arranged in the third aperture and at least includes a light emitting layer. A gate electrode is arranged on the gate insulation film and a counter electrode is arranged on the intermediate layer. A second insulation film(102) is arranged to cover the first capacitor electrode, the gate electrode, and the counter electrode. A second capacitor electrode(112) is arranged to correspond to the first capacitor electrode on the second insulation film.

Description

Organic light emitting display apparatus and method for manufacturing the same

1 is a cross-sectional view schematically illustrating a part of an organic light emitting display device according to an exemplary embodiment of the present invention.

FIG. 2 is a circuit diagram schematically illustrating a partial pixel of the organic light emitting display device of FIG. 1.

3 is a cross-sectional view schematically illustrating a part of an organic light emitting display device according to another exemplary embodiment of the present invention.

4 is a cross-sectional view schematically illustrating a portion of an organic light emitting display device according to another exemplary embodiment of the present invention.

5 is a cross-sectional view schematically illustrating a portion of an organic light emitting display device according to another exemplary embodiment of the present invention.

6 is a cross-sectional view schematically illustrating a part of an organic light emitting display device according to another exemplary embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100; Substrate 101: First insulating film

102: second insulating film (passivation film) 110: capacitor

111: first capacitor electrode 112: second capacitor electrode

120: organic thin film transistor 121: gate electrode

123: source electrode and drain electrode 125: gate insulating film

127: organic semiconductor layer 130: organic light emitting device

131: pixel electrode 133; Mezzanine

135: counter electrode

The present invention relates to an organic light emitting display device and a method of manufacturing the same, and more particularly, to reduce the parasitic capacitance of the organic thin film transistor, to increase the capacitance of the capacitors arranged in an array, and to protect the organic light emitting device and the organic thin film transistor. A light emitting display device and a method of manufacturing the same.

An organic light emitting display device is a display device including a pixel electrode, an organic light emitting element having an opposite electrode facing the electrode and an intermediate layer interposed therebetween. Such organic light emitting display devices include an active matrix (AM) organic light emitting display device and a passive matrix (PM) organic light emitting display device. In the active driving type organic light emitting display device, a thin film transistor is electrically connected to the pixel electrode to control an electrical signal applied to the pixel electrode through the thin film transistor, and the passive driving type organic light emitting display device has a first pattern of a stripe pattern that crosses each other. It is provided with an electrode and a 2nd electrode, and these intersection points become each pixel. The present invention relates to an active driven organic light emitting display device.

Such an active driving type organic light emitting display device includes a capacitor in addition to a thin film transistor electrically connected to a pixel electrode of the organic light emitting diode, and the capacitor maintains a current to the pixel electrode of the organic light emitting diode or improves driving speed. Function In order to efficiently perform this, it is preferable that a capacitor has a large capacitance. However, in the case of the capacitor provided in the conventional organic light emitting display device, there is a problem that the capacitance is not large.

The present invention has been made to solve various problems, including the above problems, while reducing the parasitic capacitance of the organic thin film transistor, while increasing the capacitance of the capacitors arranged in an array, the organic light emitting element and the protection of the organic thin film transistor secured An object of the present invention is to provide a display device and a method of manufacturing the same.

In order to achieve the above object and various other objects, the present invention provides a substrate comprising: (i) a substrate, (ii) a first capacitor electrode, a source electrode and a drain electrode disposed on the substrate, the source electrode and a drain. A pixel electrode electrically connected to any one of the electrodes, (iii) a first opening exposing at least a portion of the first capacitor electrode, a second opening exposing opposite portions of the source electrode and the drain electrode, A first insulating film having a third opening exposing at least a portion of the pixel electrode, (iv) an organic semiconductor layer disposed in a second opening of the first insulating film and in contact with the source electrode and the drain electrode, respectively, and the organic semiconductor A gate insulating film disposed on the layer, (v) an intermediate layer including at least a light emitting layer disposed in the third opening and disposed on an exposed portion of the pixel electrode; (vi) a gate electrode disposed on the gate insulating film, a counter electrode disposed on the intermediate layer, (vii) a second capacitor disposed to cover the first capacitor electrode, the gate electrode, and the counter electrode; An insulating film and (viii) a second capacitor electrode disposed on the second insulating film so as to correspond to the first capacitor electrode are provided.

In order to achieve the above object, the present invention also provides a substrate comprising: (i) a substrate, (ii) a first capacitor electrode disposed on the substrate, a source electrode and a drain electrode, and one of the source electrode and the drain electrode. A pixel electrode electrically connected to the pixel electrode, (iii) a first opening exposing at least a portion of the first capacitor electrode, a second opening exposing opposing portions of the source electrode and the drain electrode; A first insulating film having a third opening exposing at least a portion thereof, (iv) an organic semiconductor layer disposed in the second opening of the first insulating film and in contact with the source electrode and the drain electrode, respectively, and disposed on the organic semiconductor layer A gate insulating film, a gate electrode disposed on the gate insulating film, (v) covering the first capacitor electrode and the gate electrode, and writing down the pixel electrode. A second insulating film provided to expose a portion of the figure, (vi) an intermediate layer including at least a light emitting layer disposed on an exposed portion of the pixel electrode, and (vii) a first insulating film on the second insulating film. A second capacitor electrode disposed to correspond to each other, and an opposite electrode disposed on the intermediate layer, are provided.

According to another aspect of the present invention, an electrode electrically connected to the pixel electrode among the source electrode and the drain electrode may be provided integrally with the pixel electrode.

According to another feature of the present invention, an electrode which is not electrically connected to the pixel electrode among the source electrode and the drain electrode may be provided integrally with the first capacitor electrode.

According to another feature of the present invention, at least a part of the lower surface of the gate electrode may be in contact with the upper surface of the first insulating film.

According to another feature of the invention, the gate electrode may be disposed in the second opening of the first insulating film, the end surface of the gate electrode may be in contact with the second opening side of the first insulating film.

According to still another feature of the present invention, the first opening of the first insulating film may be provided to expose all of the first capacitor electrodes.

According to another feature of the invention, the first insulating film may be provided with a photoresist.

According to another feature of the invention, the second insulating film may be provided with aluminum oxide, titanium oxide, hafnium oxide, zirconium oxide, lanthanum oxide, praseodymium oxide or yttrium oxide.

The present invention also provides the steps of (i) forming a first capacitor electrode, a source electrode and a drain electrode on a substrate, (ii) the first capacitor electrode, the source electrode and Applying a photoresist to cover the drain electrode to form a first insulating film, (iii) exposing and developing the first insulating film to expose at least a portion of the first capacitor electrode, and Forming a second opening exposing opposite portions of the source electrode and the drain electrode, and (iv) forming an organic semiconductor layer in contact with the source electrode and the drain electrode in the second opening of the first insulating film, respectively; (V) forming a gate insulating film on the organic semiconductor layer, (vi) forming a gate electrode on the gate insulating film, and (vii) the first capacitor electrode And forming a second insulating film to cover the gate electrode, and (viii) forming a second capacitor electrode corresponding to the first capacitor electrode on the second insulating film. A method of manufacturing a display device is provided.

According to another aspect of the present invention, the forming of the first capacitor electrode, the source electrode and the drain electrode on the substrate, any one of the source electrode and the drain electrode is formed integrally with the first capacitor electrode It can be said that it is a step.

According to another feature of the invention, the second insulating film may be formed of aluminum oxide, titanium oxide, hafnium oxide, zirconium oxide, lanthanum oxide, praseodymium oxide or yttrium oxide.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view schematically showing a part of an organic light emitting display device according to an exemplary embodiment of the present invention, and FIG. 2 is a circuit diagram schematically showing a part of the organic light emitting display device of FIG. 1.

1 and 2, an organic light emitting device 130, an organic thin film transistor 120, a capacitor 110, and another organic thin film transistor 140 are provided on a substrate 100. Herein, the organic thin film transistor 120 of the reference numeral 120 is a driving transistor for driving the organic light emitting element 130, and the organic thin film transistor 140 of the reference number 140 switches an electrical signal to be applied to the organic light emitting element 130. Switching transistor. Of course, the circuit structure of the organic light emitting display device according to the present invention is not limited to the circuit structure shown in FIGS. 1 and 2, and various modifications are possible, such as other electronic elements may be further provided. Hereinafter, for convenience, the interconnection structure of the organic thin film transistor 120, the capacitor 110, and the organic light emitting element 130 will be described.

As the substrate 100, not only a glass substrate but also various plastic substrates such as acrylic may be used, and further, a metal plate may be used. The substrate 100 may further include a buffer layer (not shown) as necessary.

The substrate 100 includes a first capacitor electrode 111, a source electrode and a drain electrode 123, and a pixel electrode 131 electrically connected to any one of the source electrode and the drain electrode 123. In FIG. 1, the first capacitor electrode 111 and the gate electrode 121 are illustrated as being separated from each other. However, as shown in the circuit diagram of FIG. 2, the electrodes are electrically connected to each other.

These electrodes are formed of a conductive material, and may be formed of the same material at the same time as necessary, or may be formed of different materials in different processes. When formed of the same material may be formed of a transparent material or an opaque material, if necessary. More specifically, as described below, when light is extracted to the outside through the pixel electrode 131, the light is formed of a transparent material, and when it is not extracted to the outside through the pixel electrode 131, it is formed as a reflective electrode. Can be. When formed of a transparent material it may be provided with ITO, IZO, ZnO or In ₂ O ₃ , when used as a reflective electrode Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, W and A reflective film formed of these compounds and the like and an ITO, IZO, ZnO or In ₂ O ₃ film formed thereon may be provided. These electrodes may be formed through deposition using a mask, or may be formed by forming a conductive material layer on the substrate 100 and then patterning the conductive material layer.

At this time, the electrically connected to the pixel electrode 131 of the source electrode and the drain electrode 123 may be provided integrally with the pixel electrode 131 as shown in FIG. Also, one of the source electrode and the drain electrode 123 that is not electrically connected to the pixel electrode 131 is electrically connected to the first capacitor electrode 111.

A first insulating film 101 is formed on these electrodes, and the first insulating film 101 has three openings. That is, the first insulating film 101 may include a first opening exposing at least a portion of the first capacitor electrode 111, a second opening exposing opposite portions of the source electrode and the drain electrode 123, and the pixel electrode. And a third opening that exposes at least a portion of 131.

The first insulating film 101 may be formed by various methods. For example, the first insulating film 101 having an opening is formed by applying a photoresist to the entire surface of the substrate 100 and exposing and developing the same. can do. Of course, in addition to this, a material such as silicon oxide or silicon nitride may be applied to the entire surface of the substrate 100 and then irradiated with a laser beam to remove the irradiated portion, thereby forming the first insulating layer 101 having an opening. .

The organic semiconductor layer 127 is provided in the second opening of the first insulating film 101. The organic semiconductor layer 127 is in contact with portions exposed by the second openings of the source electrode and the drain electrode 123, respectively. The gate insulating film 125 is provided on the organic semiconductor layer 127.

The organic semiconductor layer 127 is formed of an organic material having semiconductor characteristics, for example, pentacene, tetracene, anthracene, naphthalene, alpha-6-thiophene, alpha-4 -Thiophene, perylene and its derivatives, rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene Tetracarboxylic dianhydride and its derivatives, polythiophene and its derivatives, polyparaphenylenevinylene and its derivatives, polyparaphenylene and its derivatives, polyflorene and its derivatives, polyti Offenvinylene and derivatives thereof, polythiophene-heterocyclic aromatic copolymers and derivatives thereof, oligothiophenes of alpha-5-thiophene and derivatives thereof, phthalocyanines with or without metals and their At least one of derivatives, pyromellitic dianhydrides and derivatives thereof, pyromellitic diimides and derivatives thereof, perylenetetracarboxylic acid dianhydrides and derivatives thereof, and perylenetetracarboxylic diimides and derivatives thereof It may be a material having any one. The organic semiconductor layer 127 may be formed by various methods such as an inkjet printing method, a stamping method, a dipping method, or a spin coating method. In particular, when the organic semiconductor layer 127 is formed using the inkjet printing method, the organic semiconductor layer 127 may be formed as shown in FIG. The insulating layer 101 may serve as a bank so that the organic semiconductor layer 127 may be provided at an accurate position.

The gate insulating layer 125 may be formed of an inorganic material such as silicon oxide or silicon nitride, or may be formed of an organic material such as parylene, acrylic polymer (PMMA), or epoxy. The gate insulating layer 125 may be formed by various methods such as deposition, spin coating inkjet printing, or screen pasting. In particular, the gate insulating layer 125 may be formed using the inkjet printing method, as shown in FIG. 1. By acting as the bank, the gate insulating layer 125 may be provided at the correct position. In this case, the gate insulating layer 125 is preferably made of a material having a low dielectric constant. That is, as described later, the gate electrode 121 is provided on the gate insulating layer 125, and the gate electrode 121 is provided to overlap the source electrode and the drain electrode 123. Therefore, the parasitic capacitance is generated at the overlapping portions of the gate electrode 121, the source electrode, and the drain electrode 123. In order to reduce this, the gate insulating layer 125 is preferably made of a material having a low dielectric constant.

Meanwhile, at least a part of the pixel electrode 131 is exposed by the third opening of the first insulating film 101, and the intermediate layer 133 is provided on this part. The gate electrode 121 is provided on the gate insulating layer 125, and the counter electrode 135 is provided on the intermediate layer 133.

The intermediate layer 133 includes at least a light emitting layer, and receives holes and electrons from the pixel electrode 131 below and the counter electrode 135 above to form light.

The intermediate layer 133 may be provided with low molecular weight or high molecular organic material. When using low molecular weight organic materials, hole injection layer (HIL), hole transport layer (HTL), organic emission layer (EML), electron transport layer (ETL), electron injection layer (EIL) The electron injection layer may be formed by stacking a single or complex structure, and the usable organic materials may be copper phthalocyanine (CuPc), N, N-di (naphthalen-1-yl) -N, N '-Diphenyl-benzidine (N, N'-Di (naphthalene-1-yl) -N, N'-diphenyl-benzidine: NPB), tris-8-hydroxyquinoline aluminum ( Alq3) can be used in various ways. When the intermediate layer is formed of such a low molecular weight organic material, the intermediate layer may be formed by various methods such as a deposition method or an inkjet printing method.

In the case of the polymer organic material, the structure may include a hole transport layer (HTL) and an emission layer (EML). In this case, PEDOT is used as the hole transport layer, and poly phenylenevinylene (PPV) and polyfluorene are used as the emission layer. Polymer organic materials such as (polyfluorene) are used. When the intermediate layer is formed of the polymer organic material, it may be formed using an inkjet printing method or a thermal transfer method.

The gate electrode 121 and the counter electrode 135 may be formed of the same material at the same time, or may be formed of different materials as necessary. Hereinafter, a case in which the same material is formed for convenience will be described.

The intermediate layer 133 including the emission layer receives light and holes from the pixel electrode 131 and the counter electrode 135 to generate light. In this case, the pixel electrode 131 functions as an anode electrode, and the opposite electrode 135 functions as a cathode electrode. Of course, the polarity of the pixel electrode 131 and the counter electrode 135 may be reversed.

Light generated in the intermediate layer 133 including the light emitting layer is extracted to the outside through the pixel electrode 131 or the counter electrode 135, and thus is located on the optical path among the pixel electrode 131 and the counter electrode 135. The electrode may be provided as a transparent electrode, and the other electrode may be provided as a transparent electrode or a reflective electrode.

Therefore, like the pixel electrode 131 described above, the counter electrode 135 may be provided as a transparent electrode or a reflective electrode, and when used as a transparent electrode, Li, Ca, LiF / Ca, LiF / Al, Al, Mg, and these After the deposition of the compound toward the intermediate layer 133, it may have a structure such that the auxiliary electrode or bus electrode line is formed of a material for forming a transparent electrode, such as ITO, IZO, ZnO or In ₂ O ₃ thereon. And when used as a reflective electrode is formed by depositing the above Li, Ca, LiF / Ca, LiF / Al, Al, Mg and their compounds.

The portion exposed by the first opening of the first insulating film 101 of the gate electrode 121, the counter electrode 135, and the first capacitor electrode 111 as described above is covered with the second insulating film 102. The second capacitor electrode 112 is disposed on the second insulating layer 102 to correspond to the first capacitor electrode 101.

The second insulating layer 102 may function as a passivation layer that protects the organic thin film transistor 120 and the organic light emitting element 130. The organic thin film transistor and the portion formed of the organic material of the organic light emitting element 130 are easily damaged by impurities such as oxygen or moisture, so it is necessary to prevent them. Therefore, it is necessary to protect them with materials having excellent passivation characteristics.

In this case, the second insulating layer 102 serving as the passivation layer is interposed between the first capacitor electrode 111 and the second capacitor electrode 112 of the capacitor 110. The capacitor 110 functions to maintain a current to the pixel electrode 131 of the organic light emitting element 130 or to improve a driving speed. In order to efficiently perform this, it is preferable that the capacitance of the capacitor 110 is large. Therefore, in order to increase the capacitance of the capacitor 110, the second insulating layer 102 is preferably made of a material having excellent passivation characteristics and high dielectric constant.

As such, the second insulating film 102 is preferably formed of a material having excellent passivation characteristics and high dielectric constant. It is preferable. The relative dielectric constant is about 8 for aluminum oxide, about 20 for hafnium oxide, about 15 for zirconium oxide, and 40 to 100 for titanium oxide. By forming the second insulating layer 102, the capacitance of the capacitor 110 can be significantly increased.

In addition, since the gate insulating film 125 of the organic thin film transistor is interposed between both electrodes of the capacitor 110, when the capacitance is increased by using a material having a high dielectric constant, the parasitic capacitance of the organic thin film transistor is also increased. However, in the present invention, such a problem is prevented by separately using a material interposed between the electrodes of the gate insulating film 125 and the capacitor 110. In addition, the passivation film (second insulating film) 102 provided for the protection of the organic thin film transistor 120 and the organic light emitting element 130 may be a dielectric interposed between the electrodes of the capacitor 110. The capacitor 110 having a large capacitance can be provided without adding.

The second insulating layer 102 may be formed by various methods, for example, may be formed as a thin film using atomic layer deposition (ALD).

That is, as described above, the gate electrode 121 and the counter electrode 135 may be formed, and then, the gate electrode 121 and the counter electrode 135 may be inserted into the reaction chamber, and the first material source may be fed into the chamber (first feeding step) to chemically treat the first material layer. It forms by the method of vapor deposition. Thereafter, after passing through a first purge step of removing the first reactant in the chamber, the second reactant is fed into the chamber (second feeding step) so that the first layer of material and the second reactant are formed. As a result, the first material layer is changed to form a second insulating film 102 made of an atomic layer thin film having a desired component. In addition, a second purge step of removing the remaining second reactant or the by-products generated by not reacting with the first material layer may be additionally performed. For example, when forming a second insulating film 102 of an atomic layer thin film made of aluminum oxide (Al ₂ O ₃ ), first, a trimethyl aluminum (TMA: Al (CH ₃ ) ₃ ) film is deposited, and then water vapor or ozone is fed. The heat treatment is performed to convert the trimethyl aluminum film into an aluminum oxide film to form the second insulating film 102 formed of the atomic layer thin film.

Meanwhile, as shown in FIG. 2, the second capacitor electrode 112 is electrically connected to the gate electrode 121 of the organic thin film transistor 120. For this purpose, the second capacitor electrode 112 and the opposite electrode 135 are disposed. Prior to forming the gate electrode 121, a contact hole is formed on the second insulating layer 102 so that at least a portion of the gate electrode 121 is exposed, and the second capacitor electrode 112 and the gate electrode 121 are electrically connected to each other through the contact hole. It can also be connected.

3 is a cross-sectional view schematically illustrating a part of an organic light emitting display device according to another exemplary embodiment of the present invention.

The organic light emitting display device according to the present exemplary embodiment is different from the organic light emitting display device according to the above-described embodiment, in which the second capacitor of the source electrode and the drain electrode 123 is not electrically connected to the pixel electrode 131. It is provided integrally with the electrode (112). When the components to be electrically connected as described above are provided on the same plane, these components may be provided integrally.

4 is a cross-sectional view schematically illustrating a portion of an organic light emitting display device according to another exemplary embodiment of the present invention.

The organic thin film transistor according to the present embodiment differs from the organic thin film transistor according to the above-described embodiment in that at least a part of the lower surface of the gate electrode 121 is provided to contact the upper surface 101a of the first insulating film 101. Is there. This is to prevent the peeling phenomenon due to poor bonding force between the gate electrode 121 and the gate insulating film 125. That is, at least a part of the lower surface of the gate electrode 121 is in contact with the upper surface 101a of the first insulating film 101 having excellent bonding force with the gate electrode 121, thereby allowing the gate electrode 121 and the gate insulating film 125. Even when the bonding force between them is not good, the gate electrode 121 can be prevented from peeling off.

Of course, unlike this, the gate electrode 121 is disposed in the second opening of the first insulating film 101, and the end surface of the gate electrode 121 is placed on the second opening side surface 101b of the first insulating film 101. By using the excellent bonding force between the end face of the gate electrode 121 and the second opening side surface 101b of the first insulating film 101, the bonding force between the gate electrode 121 and the gate insulating film 125 is improved. Even if it is not good, the gate electrode 121 can be prevented from peeling off.

5 is a cross-sectional view schematically illustrating a portion of an organic light emitting display device according to another exemplary embodiment of the present invention.

The organic light emitting display device according to the present embodiment differs from the organic light emitting display device according to the above-described embodiment in the structure of the capacitor 110. That is, in the organic light emitting display device according to the above-described embodiment, the first opening of the first insulating film 101 is provided to expose a part of the first capacitor electrode 111 of the capacitor 110. The first opening of the first insulating film 101 of the organic light emitting display device according to the example is provided to expose all of the first capacitor electrodes 111. Of course, in FIG. 1, the first insulating film 101 is formed not to be provided around the first capacitor electrode 111 and the surroundings thereof, rather than having the first opening provided in the first insulating film 101. Of course this is possible.

As such, the first opening of the first insulating film 101 exposes all of the first capacitor electrode 111 of the capacitor 110, thereby reducing the distance between the first capacitor electrode 111 and the second capacitor electrode 112. By making it more uniform and closer, as a result, the capacitance of the capacitor 110 can be further increased.

6 is a cross-sectional view schematically illustrating a part of an organic light emitting display device according to another exemplary embodiment of the present invention.

The organic light emitting display device according to the present exemplary embodiment differs from the organic light emitting display devices according to the above embodiments in the structure of the organic light emitting device 130.

That is, in the organic light emitting diode display according to the above-described embodiments, an intermediate layer 133 is provided at a portion exposed by the third opening of the first insulating layer 101 of the pixel electrode 131, and the intermediate layer 133 is provided. ), A counter electrode 135 is provided, and the second insulating film 102 is provided to cover the counter electrode 135. However, in the organic light emitting diode display according to the present exemplary embodiment, the third opening of the first insulating film 101 has the same structure in which at least a portion of the pixel electrode 131 is exposed, but the second insulating film 102 also has a pixel electrode ( The intermediate layer 133 is formed on a portion of the pixel electrode 131 exposed by the first insulating layer 101 and the second insulating layer 102, and the opposite electrode 135 is exposed to expose at least a portion of the 131. The difference is that the intermediate layer 133 is provided above the second insulating film 102.

In general, the electric field is concentrated on the edge of the conductive object, and thus the electric field is concentrated on the edge of the pixel electrode 131 of the organic light emitting display device. As a result, when the distance between the pixel electrode 131 and the counter electrode 135 is short, defects such as interruption of the intermediate layer 133 provided between the two electrodes or shortening of the two electrodes may occur due to the concentrated electric field. Can be. Therefore, not only the first insulating film 101 but also the second insulating film 102 are provided between the edge of the pixel electrode 131 and the opposing electrode 135 so as to widen the distance therebetween, thereby providing an edge portion of the pixel electrode 131. In this case, the intermediate layer 133 including the emission layer may be cut off or the electric field may be concentrated to prevent the pixel electrode 131 and the counter electrode 135 from being short-circuited.

According to the organic light emitting display device and the manufacturing method thereof of the present invention made as described above, while reducing the parasitic capacitance of the organic thin film transistor, while increasing the capacitance of the capacitor arranged in the array, the organic light emitting device and the organic thin film transistor is secured A light emitting display device can be implemented.

Although the present invention has been described with reference to the embodiments shown in the drawings, these are merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

Claims (12)

Board; A pixel electrode electrically connected to a first capacitor electrode disposed on the substrate, a source electrode and a drain electrode, and one of the source electrode and the drain electrode; A first opening exposing at least a portion of said first capacitor electrode, a second opening exposing opposite portions of said source electrode and a drain electrode, and a third opening exposing at least a portion of said pixel electrode; 1 insulating film; An organic semiconductor layer disposed in the second opening of the first insulating layer and in contact with the source electrode and the drain electrode, and a gate insulating layer disposed on the organic semiconductor layer; An intermediate layer including at least an emitting layer disposed in the third opening and disposed on an exposed portion of the pixel electrode; A gate electrode disposed on the gate insulating film and an opposite electrode disposed on the intermediate layer; A second insulating film disposed to cover the first capacitor electrode, the gate electrode, and the counter electrode; And And a second capacitor electrode disposed on the second insulating layer so as to correspond to the first capacitor electrode. Board; A pixel electrode electrically connected to a first capacitor electrode disposed on the substrate, a source electrode and a drain electrode, and one of the source electrode and the drain electrode; A first opening exposing at least a portion of said first capacitor electrode, a second opening exposing opposite portions of said source electrode and a drain electrode, and a third opening exposing at least a portion of said pixel electrode; 1 insulating film; An organic semiconductor layer disposed in the second opening of the first insulating film and in contact with the source electrode and the drain electrode, a gate insulating film disposed on the organic semiconductor layer, and a gate electrode disposed on the gate insulating film; A second insulating layer covering the first capacitor electrode and the gate electrode and having at least a portion of the pixel electrode exposed; An intermediate layer including at least an emission layer disposed on the exposed portion of the pixel electrode; And And a second capacitor electrode disposed to correspond to the first capacitor electrode on the second insulating layer, and an opposite electrode disposed on the intermediate layer. The method according to claim 1 or 2, And an electrode electrically connected to the pixel electrode among the source electrode and the drain electrode is integrally provided with the pixel electrode. The method according to claim 1 or 2, The electrode of the source electrode and the drain electrode which is not electrically connected to the pixel electrode is integrally provided with the first capacitor electrode. The method according to claim 1 or 2, And at least a portion of a lower surface of the gate electrode is in contact with an upper surface of the first insulating layer. The method according to claim 1 or 2, And the gate electrode is disposed in a second opening of the first insulating film, and an end surface of the gate electrode is in contact with a second opening side surface of the first insulating film. The method according to claim 1 or 2, And a first opening of the first insulating film to expose all of the first capacitor electrodes. The method according to claim 1 or 2, And the first insulating film is formed of a photoresist. The method according to claim 1 or 2, And the second insulating film is formed of aluminum oxide, titanium oxide, hafnium oxide, zirconium oxide, lanthanum oxide, praseodymium oxide, or yttrium oxide. Forming a first capacitor electrode, a source electrode and a drain electrode on the substrate; Forming a first insulating film by applying a photoresist to cover the first capacitor electrode, the source electrode, and the drain electrode; Exposing and developing the first insulating film to form a first opening exposing at least a portion of the first capacitor electrode and a second opening exposing opposing portions of the source electrode and the drain electrode; Forming an organic semiconductor layer in contact with the source electrode and the drain electrode in the second opening of the first insulating film, respectively; Forming a gate insulating film on the organic semiconductor layer; Forming a gate electrode on the gate insulating film; Forming a second insulating film to cover the first capacitor electrode and the gate electrode; And And forming a second capacitor electrode corresponding to the first capacitor electrode on the second insulating layer. The method of claim 10, The forming of the first capacitor electrode, the source electrode and the drain electrode on the substrate may include forming any one of the source electrode and the drain electrode integrally with the first capacitor electrode. Method of manufacturing a display device. The method of claim 10, And the second insulating film is formed of aluminum oxide, titanium oxide, hafnium oxide, zirconium oxide, lanthanum oxide, praseodymium oxide, or yttrium oxide.

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