KR100623396B1 - 체적탄성파 소자 및 그 제조방법 - Google Patents
체적탄성파 소자 및 그 제조방법 Download PDFInfo
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- KR100623396B1 KR100623396B1 KR1020050056602A KR20050056602A KR100623396B1 KR 100623396 B1 KR100623396 B1 KR 100623396B1 KR 1020050056602 A KR1020050056602 A KR 1020050056602A KR 20050056602 A KR20050056602 A KR 20050056602A KR 100623396 B1 KR100623396 B1 KR 100623396B1
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- 238000000034 method Methods 0.000 title claims abstract description 61
- 230000008569 process Effects 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 239000010409 thin film Substances 0.000 claims abstract description 34
- 230000003647 oxidation Effects 0.000 claims abstract description 14
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 10
- 238000009623 Bosch process Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 39
- 238000000151 deposition Methods 0.000 claims description 21
- 239000011148 porous material Substances 0.000 claims description 15
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 10
- 239000003963 antioxidant agent Substances 0.000 claims description 10
- 230000003078 antioxidant effect Effects 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- 230000003064 anti-oxidating effect Effects 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 230000005587 bubbling Effects 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 239000011800 void material Substances 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000347 anisotropic wet etching Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000277 atomic layer chemical vapour deposition Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02133—Means for compensation or elimination of undesirable effects of stress
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02149—Means for compensation or elimination of undesirable effects of ageing changes of characteristics, e.g. electro-acousto-migration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims (9)
- 기판, 기판 상부에 공진영역을 형성하는 음향학적 반사층, 지지층, 하부전극, 압전박막 및 상부전극을 포함하여 구성된 체적탄성파 소자에 있어서,상기 음향학적 반사층의 하단으로부터 상기 기판의 저면까지 관통되는 공극이 형성된 것을 특징으로 하는 체적탄성파 소자.
- 제1항에 있어서, 상기 공진영역을 제외한 기판 상부에 형성된 산화방지막을 포함하는 것을 특징으로 하는 체적탄성파 소자.
- 제1항 또는 제2항에 있어서, 상기 공극은 두개 이상인 것을 특징으로 하는 체적탄성파 소자.
- 제1항 또는 제2항에 있어서, 상기 공극은 상기 음향학적 반사층의 하단으로부터 상기 기판의 저면까지 공극폭이 증가하도록 형성된 것을 특징으로 하는 체적탄성파 소자.
- 제1항 또는 제2항에 있어서, 상기 공극의 최장폭은 음향학적 반사층의 최장폭보다 작은 것을 특징으로 하는 체적탄성파 소자.
- 기판 위에 희생층을 형성하는 희생층형성단계와,상기 희생층 위에 소정의 두께로 AlN, SiO2 및 Si3N4 중 하나를 증착시키거나 하나 이상을 다층 증착시켜 지지층을 형성하는 지지층형성단계와,상기 지지층 위에 전도성 재료를 소정의 패턴으로 증착하여 하부전극을 형성하는 하부전극형성단계와,상기 하부전극 위에 소정의 패턴으로 압전특성을 보유하는 재료를 증착하여 압전박막을 형성하는 압전박막형성단계와,상기 압전박막 위에 전도성 재료를 소정의 패턴으로 증착하여 상부전극을 형성하는 상부전극형성단계와,상기 희생층의 하단으로부터 기판 저면까지 관통되는 기판공극을 형성하는 공극형성단계 및상기 희생층을 제거하는 희생층제거단계를 포함하는 체적탄성파 소자 제조방법.
- 제5항에 있어서, 상기 희생층형성단계는상기 기판 위에 실리콘 질화막을 수~수십nm의 두께로 성장시키는 산화방지막형성단계와,포토레지스트 공정을 이용하여 상기 산화방지막이 공진영역을 구분하는 패턴을 갖도록 식각하는 패턴단계와,상기 산화방지막이 제거된 부분을 열산화시키는 열산화막형성단계로 이루어지는 체적탄성파 소자 제조방법.
- 제5항에 있어서, 상기 공극형성단계는 보쉬(bosch) 공정을 이용하는 것을 특징으로 하는 체적탄성파 소자 제조방법.
- 제5항 내지 제8항에 중 어느 하나에 있어서,상기 희생층형성단계 전 또는 공극형성단계 전에 그라인딩 머신, 래핑 머신 또는 폴리싱 머신을 이용하여 기판을 수십~200 um 두께로 하는 기판슬림화단계 및상기 기판을 세정용액, 처음파 또는 버블링을 이용하여 세정하는 세정단계를 포함하는 것을 특징으로 하는 체적탄성파 소자 제조방법.
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013108965A1 (en) * | 2012-01-18 | 2013-07-25 | Samsung Electronics Co., Ltd. | Bulk acoustic wave resonator |
CN111740003A (zh) * | 2020-06-22 | 2020-10-02 | 济南晶正电子科技有限公司 | 一种压电薄膜体及其制备方法、空腔型器件及其制备方法 |
CN111756351A (zh) * | 2020-04-03 | 2020-10-09 | 诺思(天津)微系统有限责任公司 | 体声波谐振器及其制造方法、滤波器和电子设备 |
CN112953446A (zh) * | 2021-02-05 | 2021-06-11 | 苏州汉天下电子有限公司 | 一种体声波谐振器的制备方法以及体声波谐振器 |
-
2005
- 2005-06-28 KR KR1020050056602A patent/KR100623396B1/ko active IP Right Grant
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013108965A1 (en) * | 2012-01-18 | 2013-07-25 | Samsung Electronics Co., Ltd. | Bulk acoustic wave resonator |
CN103534943A (zh) * | 2012-01-18 | 2014-01-22 | 三星电子株式会社 | 体声波谐振器 |
US9899593B2 (en) | 2012-01-18 | 2018-02-20 | Samsung Electronics Co., Ltd. | Bulk acoustic wave resonator |
US10991872B2 (en) | 2012-01-18 | 2021-04-27 | Samsung Electronics Co., Ltd. | Bulk acoustic wave resonator |
CN111756351A (zh) * | 2020-04-03 | 2020-10-09 | 诺思(天津)微系统有限责任公司 | 体声波谐振器及其制造方法、滤波器和电子设备 |
CN111740003A (zh) * | 2020-06-22 | 2020-10-02 | 济南晶正电子科技有限公司 | 一种压电薄膜体及其制备方法、空腔型器件及其制备方法 |
CN112953446A (zh) * | 2021-02-05 | 2021-06-11 | 苏州汉天下电子有限公司 | 一种体声波谐振器的制备方法以及体声波谐振器 |
CN112953446B (zh) * | 2021-02-05 | 2024-02-13 | 苏州汉天下电子有限公司 | 一种体声波谐振器的制备方法以及体声波谐振器 |
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