KR100590245B1 - Electrode Structure of Liquid Crystal on Silicon - Google Patents

Electrode Structure of Liquid Crystal on Silicon Download PDF

Info

Publication number
KR100590245B1
KR100590245B1 KR1020000055133A KR20000055133A KR100590245B1 KR 100590245 B1 KR100590245 B1 KR 100590245B1 KR 1020000055133 A KR1020000055133 A KR 1020000055133A KR 20000055133 A KR20000055133 A KR 20000055133A KR 100590245 B1 KR100590245 B1 KR 100590245B1
Authority
KR
South Korea
Prior art keywords
electrode
liquid crystal
pixel electrode
common electrode
pixel
Prior art date
Application number
KR1020000055133A
Other languages
Korean (ko)
Other versions
KR20020022371A (en
Inventor
이유진
송남철
Original Assignee
삼성에스디아이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성에스디아이 주식회사 filed Critical 삼성에스디아이 주식회사
Priority to KR1020000055133A priority Critical patent/KR100590245B1/en
Publication of KR20020022371A publication Critical patent/KR20020022371A/en
Application granted granted Critical
Publication of KR100590245B1 publication Critical patent/KR100590245B1/en

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G02F1/133555—Transflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0247—Flicker reduction other than flicker reduction circuits used for single beam cathode-ray tubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)

Abstract

본 발명은 반사형 액정표시장치의 전극구조에 관한 것으로서, 매트릭스형태로 화소전극이 형성된 하부기판과, 커버글라스의 상면에 상기 화소전극의 배열형태와 대응된 형태로 투명전극이 증착되고 나머지 부분은 메탈이 코팅된 공통전극이 형성된 상부기판으로 구성된 것을 특징으로 하며, 공통전극을 하부기판에 형성된 화소전극의 배열형태와 대응된 형태를 갖도록 매트릭스형태로 투명전극을 이루게 하고, 그 나머지 부분을 메탈로 코팅하여 구현함에 따라 화소전극 및 공통전극의 저항차를 줄여 줌으로서, 플리커가 발생하는 것을 방지하고, 콘트라스트비(contrast ratio)를 향상시키고, 액정 및 화소전극을 통해 반사되어 나오는 빛이 실제 화소크기에 해당되는 이외의 부분으로 새는 것을 방지하게된다.The present invention relates to an electrode structure of a reflective liquid crystal display device, wherein a transparent substrate is deposited in a form corresponding to an arrangement of the pixel electrodes on a lower substrate on which a pixel electrode is formed in a matrix form, and an upper surface of a cover glass. The upper substrate is formed of a metal-coated common electrode, characterized in that the common electrode to form a transparent electrode in the form of a matrix to have a form corresponding to the arrangement of the pixel electrode formed on the lower substrate, the rest of the metal Coating reduces the resistance difference between the pixel electrode and the common electrode, thereby preventing flicker, improving the contrast ratio, and reflecting light through the liquid crystal and the pixel electrode. It will prevent leaks to parts other than that applicable.

공통전극, 투명전극, 메탈, 화소전극 Common electrode, transparent electrode, metal, pixel electrode

Description

반사형 액정표시장치의 전극구조{Electrode Structure of Liquid Crystal on Silicon}Electrode Structure of Reflective Liquid Crystal Display Device {Electrode Structure of Liquid Crystal on Silicon}

도 1은 종래의 반사형 액정표시장치의 구조를 도시한 종단면도,1 is a longitudinal sectional view showing the structure of a conventional reflective liquid crystal display device;

도 2는 본 발명의 일 실시 예에 의한 반사형 액정표시장치의 구조를 도시한 분리사시도,2 is an exploded perspective view showing the structure of a reflective liquid crystal display device according to an embodiment of the present invention;

도 3은 도 2의 C-C를 따라 도시한 단면도,3 is a cross-sectional view taken along the line C-C of FIG.

도 4는 본 발명의 일 실시 예에 의한 반사형 액정표시장치의 공통전극의 구조를 도시한 평면도이다.4 is a plan view illustrating a structure of a common electrode of a reflective liquid crystal display according to an exemplary embodiment of the present invention.

< 도면의 주요 부분에 대한 부호의 설명><Description of the reference numerals for the main parts of the drawings>

41 : 커버글라스 45 : 공통전극41: cover glass 45: common electrode

45a : 투명전극 45b : 메탈45a: transparent electrode 45b: metal

LC : 액정 51 : 백 플랜LC: LCD 51: Back Plan

53 : 반사판 60 : 액정층53 reflector 60 liquid crystal layer

본 발명은 반사형 액정표시장치의 전극구조에 관한 것으로서, 상부기판에 형 성되는 공통전극의 구조를 하부기판에 형성된 화소전극의 배열구조와 대응된 형태를 갖도록 실제 전계가 형성되어야 할 이외의 부분을 메탈로 코팅하여 상·하부기판의 저항차를 줄임으로서 플리커를 감소시키는 반사형 액정표시장치의 전극구조에 관한 것이다. The present invention relates to an electrode structure of a reflective liquid crystal display device, wherein an actual electric field is to be formed so that the structure of the common electrode formed on the upper substrate corresponds to the arrangement of the pixel electrodes formed on the lower substrate. The present invention relates to an electrode structure of a reflective liquid crystal display device which reduces flicker by coating a metal with metal to reduce resistance difference between upper and lower substrates.

종래의 반사형 액정표시장치는 도 1에 도시한 바와 같이 소정의 간격을 두고 대향되게 설치된 상·하부기판(10·20)과, 상기 상·하부기판(10·20)의 사이에 액정(LC)이 주입 밀봉되어 형성된 액정층(30)으로 구성되어 있다.In the conventional reflective liquid crystal display device, as shown in FIG. 1, the liquid crystal LC is disposed between the upper and lower substrates 10 and 20 facing each other at predetermined intervals, and the upper and lower substrates 10 and 20. ) Is composed of a liquid crystal layer 30 formed by injection sealing.

상기 상부기판(10)은 커버글라스(11)와, 상기 커버글라스(11)의 상측에 설치되어 액정에 전압을 인가시키는 투명전극 재료인 ITO(Indium Tin Oxide)박막이 증착된 공통전극(12)과, 상기 공통전극(12)의 상측에 설치되어 액정(LC)을 소정의 방향으로 배열시키는 배향막(13)으로 이루어져 있다.The upper substrate 10 includes a cover glass 11 and a common electrode 12 on which an indium tin oxide (ITO) thin film is deposited, which is provided on the cover glass 11 and applies a voltage to the liquid crystal. And an alignment layer 13 disposed above the common electrode 12 to align the liquid crystals LC in a predetermined direction.

상기 하부기판(20)은 매트릭스형태로 배열되어 화소전극(23b)의 역할을 겸하는 반사판(23)이 조립된 백 플랜(21)과, 상기 반사판(23)의 상측에 형성되어 상기 반사판(23)을 보호하는 보호막(25)과, 상기 보호막(25)의 상측에 설치되어 액정을 소정의 방향으로 배열시키는 배향막(27)으로 이루어져 있다.The lower substrate 20 is arranged in a matrix to form a back plan 21 on which a reflecting plate 23 serving as a pixel electrode 23b is assembled, and formed on an upper side of the reflecting plate 23 to form the reflecting plate 23. And a protective film 25 for protecting the protective film 25 and an alignment film 27 provided above the protective film 25 to align the liquid crystals in a predetermined direction.

참고로, ITO의 저항값은 10Ω정도이고, 알루미늄(AL)의 저항값은 10-2Ω정도이다.For reference, the resistance value of ITO is about 10 Ω, and the resistance value of aluminum (AL) is about 10 −2 Ω.

이와 같이 구성된 반사형 액정표시장치는 화소전극(23b)과 공통전극(12)에 화면의 밝기에 상응하는 전압이 가해지면, 각 전극사이의 액정이 전압에 비례하는 상태 변화를 일으켜 일정량으로 들어온 광원의 빛은 액정층(30)을 통과하면서 그 양이 변조된 후 반사판(23)에서 반사되어 나가 화면의 밝기로 나타난다.In the reflective liquid crystal display device configured as described above, when a voltage corresponding to the brightness of the screen is applied to the pixel electrode 23b and the common electrode 12, the liquid crystal between the electrodes generates a state change proportional to the voltage and thus enters a predetermined amount. While the light passes through the liquid crystal layer 30, its amount is modulated and then reflected by the reflector 23 to appear as the brightness of the screen.

그러나, 이와 같이 구성된 종래의 반사형 액정표시장치는 공통전극(12)이 투명전극재료(ITO)가 평면전체에 걸쳐 증착된 구조로 형성되고 각 화소전극(23b)은 반사판으로 활용하기 위하여 알루미늄(Al)으로 형성됨에 따라 각 전극의 저항값의 차로 인해 액정층내의 전하가 고르게 분포되지 못하여 플리커가 발생되는 문제점이 있다.However, in the conventional reflective liquid crystal display device configured as described above, the common electrode 12 is formed in a structure in which the transparent electrode material ITO is deposited over the entire plane, and each pixel electrode 23b is formed of aluminum (used as a reflector). As Al), the charge in the liquid crystal layer is not evenly distributed due to the difference in the resistance value of each electrode, thereby causing a problem of flicker.

본 발명은 상술한 문제점을 해결하기 위하여 안출 된 것으로서, 공통전극의 구조를 실제 전계가 형성되는 부분은 화소전극의 배열형태와 대응된 형태를 갖도록 매트릭스 형태로하여 투명전극재료인 ITO를 증착하고, 상기 투명전극이 형성된 이외의 부분을 메탈로 코팅처리하여 화소전극과의 저항차를 줄이게 되어 플리커가 발생되는 것을 해소시키고, 콘트라스트비를 향상시키는 반사형 액정표시장치의 전극구조를 제공하는 데 있다.The present invention has been made to solve the above-described problems, the structure of the common electrode is formed by depositing the transparent electrode material ITO in the form of a matrix to have a form corresponding to the arrangement of the pixel electrode, The present invention provides an electrode structure of a reflective liquid crystal display device in which portions other than the transparent electrode are coated with metal to reduce the resistance difference with the pixel electrode, thereby eliminating the generation of flicker and improving the contrast ratio.

이와 같이 구성된 본 발명에 의한 반사형 액정표시장치의 전극구조는 매트릭스형태로 화소전극이 형성된 하부기판과, 커버글라스의 상면에 상기 화소전극의 배열형태와 대응된 형태로 투명전극이 증착되고 나머지 부분은 메탈이 코팅되어 공통전극을 이루는 상부기판으로 구성된 것을 특징으로 한다.The electrode structure of the reflective LCD according to the present invention configured as described above has a lower substrate on which pixel electrodes are formed in a matrix form, and transparent electrodes are deposited on the upper surface of the cover glass in a form corresponding to the arrangement of the pixel electrodes. It is characterized by consisting of an upper substrate is coated with a silver metal to form a common electrode.

이하, 첨부도면 도 2 내지 도 4를 참조하여 본 발명의 구성 및 작용을 더욱 상세히 설명하고자 한다.Hereinafter, with reference to the accompanying drawings Figures 2 to 4 will be described in more detail the configuration and operation of the present invention.

상기 도면에 도시한 바와 같이 본 발명에 의한 반사형 액정표시장치는 소정의 간격을 두고 서로 대향하도록 설치된 상·하부기판(40·50)과, 상기 상·하부기판(40·50)의 사이에 액정(LC)이 주입되어 형성된 액정층(60)으로 이루어져 있다.As shown in the figure, the reflective liquid crystal display according to the present invention is provided between the upper and lower substrates 40 and 50 and the upper and lower substrates 40 and 50 provided to face each other at predetermined intervals. It consists of a liquid crystal layer 60 formed by injecting liquid crystal LC.

상기 상부기판(40)은 커버글라스(41)와, 전압을 인가시키도록 상기 커버글라스(41)의 상면에 형성된 공통전극(45)과, 상기 공통전극(45)의 상측에 설치되어 액정(LC)을 소정의 방향으로 배열시키는 배향막(43)으로 구성된다.The upper substrate 40 includes a cover glass 41, a common electrode 45 formed on an upper surface of the cover glass 41 to apply a voltage, and an upper side of the common electrode 45. ) Is composed of an alignment film 43 arranged in a predetermined direction.

상기 하부기판(50)은 매트릭스(Matrix)형태로 배열되어 스위칭소자(53a) 및 화소전극(53b)의 역할을 겸하는 반사판(53)이 조립된 백 플랜(51)과, 상기 반사판(53)의 상측에 형성되어 상기 반사판(53)을 보호하는 보호막(55)과, 상기 보호막(55)의 상측에 형성되어 액정을 소정의 방향으로 배열시키는 배향막(57)으로 구성된다.The lower substrate 50 is arranged in a matrix form, and includes a back plan 51 in which a reflector 53, which serves as a switching element 53a and a pixel electrode 53b, is assembled, and the reflector 53 is formed. A protective film 55 formed on the upper side and protecting the reflective plate 53 and an alignment film 57 formed on the upper side of the protective film 55 to arrange liquid crystals in a predetermined direction.

상기 화소전극(53b)의 횡방향과 근접하여 게이트버스라인(53c)이 형성되고, 상기 화소전극(53b)의 종방향과 근접하여 데이터버스라인(53d)이 형성되고, 상기 게이트버스라인(53c) 및 데이터버스라인(53d)이 교차하는 부분에 스위칭소자(53a)인 TFT(Thin Film Transistor)가 설치되어 있다.A gate bus line 53c is formed close to the horizontal direction of the pixel electrode 53b, a data bus line 53d is formed close to the longitudinal direction of the pixel electrode 53b, and the gate bus line 53c is formed. ) And a thin film transistor (TFT), which is a switching element 53a, is provided at a portion where the data bus line 53d crosses each other.

상기 TFT의 게이트전극(미도시)은 게이트버스라인(53c)에서 분기되며, 소스전극(미도시)은 데이터버스라인(53d)에서 분기된다.The gate electrode (not shown) of the TFT is branched at the gate bus line 53c, and the source electrode (not shown) is branched at the data bus line 53d.

상기 화소전극(53b)은 알루미늄(Al)으로 형성되어 전극역할을 수행함과 동시에 빛을 반사시키는 반사판의 역할을 수행하도록 구성된다.The pixel electrode 53b is formed of aluminum (Al) to serve as an electrode and to reflect the light at the same time.

상기 공통전극(45)은 상기 화소전극(53b)이 배열된 형상과 대응된 형상을 갖도록 각 화소의 크기와 대응된 크기를 갖는 투명전극(45a)이 매트릭스형태로 증착되어 있고, 상기 투명전극(45a)이 형성된 나머지 부분은 메탈(45b)이 코팅되어 이루어진다.The common electrode 45 has a transparent electrode 45a having a size corresponding to the size of each pixel so as to have a shape corresponding to the shape in which the pixel electrode 53b is arranged in a matrix form. The remaining portion formed with 45a) is formed by coating the metal 45b.

상기 투명전극(45a)은 ITO(Indium Tin Oxide)로 되고, 메탈(45b)은 상기 화소전극(53b)과 동일소재인 알루미늄(AL)으로 함이 바람직하다.The transparent electrode 45a is made of indium tin oxide (ITO), and the metal 45b is preferably made of aluminum (AL), which is the same material as the pixel electrode 53b.

다음은 상기와 같이 구성된 본 발명에 의한 반사형 액정표시장치의 전극구조의 작용 및 효과에 대해서 설명한다.Next, the operation and effects of the electrode structure of the reflective liquid crystal display device according to the present invention configured as described above will be described.

먼저, 게이트버스라인(53c)과 데이터버스라인(53d)을 각 1개씩 선택하여 전압을 인가하면 상기 전압이 인가된 스위칭소자(53a)만이 온(on)되고, 온 된 스위칭소자(53a)의 드레인전극에 접속된 화소전극(53b)에 전하를 축적하여 화소전극(53b)과 공통전극(42) 사이의 액정부분만 전압이 인가되고, 상기 전압이 인가된 액정분자 각도가 변하게 되고, 그 액정분자의 각도에 따라 빛을 투과하거나 차단한다First, when one gate bus line 53c and one data bus line 53d are selected and a voltage is applied, only the switching element 53a to which the voltage is applied is turned on. The charge is accumulated in the pixel electrode 53b connected to the drain electrode so that a voltage is applied only to the liquid crystal portion between the pixel electrode 53b and the common electrode 42, and the angle of the liquid crystal molecules to which the voltage is applied is changed. Transmits or blocks light depending on the angle of the molecule

상기와 같은 원리를 이용하여 각 화소전극(53b)마다 빛의 투과 및 차단을 선택적으로 콘트롤할 수 있게 된다.By using the above principle, it is possible to selectively control the transmission and blocking of light for each pixel electrode 53b.

이때, 공통전극(45)이 상기 하나의 화소전극(53b)의 크기와 대응된 크기를 갖는 다수의 투명전극(45a)이 매트릭스 형태로 형성되고, 그 나머지 부분은 상기 화소전극(53b)재료와 동일재료인 메탈(45b)을 코팅하여 구성함에 따라 상기 공통전극(45) 및 화소전극(53b)의 저항값의 차를 줄이게 되어 액정층(60)의 전하분포를 고르게 하여 전계형태를 상·하 대칭형태로 구현함에 따라 플리커를 줄인다.In this case, a plurality of transparent electrodes 45a having a size corresponding to that of the one pixel electrode 53b of the common electrode 45 is formed in a matrix form, and the rest of the common electrode 45 is formed of a material of the pixel electrode 53b. The coating of the metal 45b made of the same material reduces the difference between the resistance values of the common electrode 45 and the pixel electrode 53b, thereby evenly distributing the charges of the liquid crystal layer 60, thereby increasing the electric field shape. Reduce flicker by implementing symmetrically.

또한, 상부기판(10)쪽으로 반사되어 나오는 빛이 메탈(45b)에 의해 차단되어 빛이 새는 것이 방지되고 실제 화소크기에 해당되는 투명전극(45a)을 통해 투과됨에 따라 콘트라스트비를 향상시킨다.In addition, the light reflected toward the upper substrate 10 is blocked by the metal 45b to prevent leakage of light and is transmitted through the transparent electrode 45a corresponding to the actual pixel size, thereby improving the contrast ratio.

상술한 바와 같이, 본 발명에 의한 반사형 액정표시장치의 전극구조에 의하면, 공통전극을 하부기판에 형성된 화소전극의 배열형태와 대응된 형태를 갖도록 매트릭스형태로 투명전극을 이루게 하고, 그 나머지 부분을 메탈로 코팅하여 구현함에 따라 화소전극 및 공통전극의 저항값의 차를 줄여 줌으로서, 액정층 내의 전하를 고르게 분포시켜 플리커가 발생하는 것을 방지하고, 콘트라스트비(contrast ratio)를 향상시키고, 액정 및 화소전극을 통해 반사되어 나오는 빛이 실제 화소크기에 해당되는 이외의 부분으로 새는 것을 방지하게된다.As described above, according to the electrode structure of the reflective liquid crystal display device according to the present invention, the common electrode is formed into a transparent electrode in a matrix so as to have a form corresponding to the arrangement of the pixel electrodes formed on the lower substrate, and the rest of the portion. By coating the metal with metal to reduce the difference between the resistance values of the pixel electrode and the common electrode, thereby evenly distributing the charges in the liquid crystal layer to prevent the occurrence of flicker, and improve the contrast ratio. And the light reflected through the pixel electrode is prevented from leaking to a portion other than the actual pixel size.

Claims (2)

매트릭스형태로 화소전극이 형성된 하부기판과,A lower substrate on which pixel electrodes are formed in a matrix form; 커버글라스의 상면에 상기 화소전극의 배열형태와 대응된 형태로 투명전극이 증착되고 나머지 부분은 메탈이 코팅된 공통전극이 형성된 상부기판으로 구성된 것을 특징으로 하는 반사형 액정표시장치의 전극구조.An electrode structure of a reflective liquid crystal display device, characterized in that a transparent electrode is deposited on a top surface of a cover glass in a form corresponding to the arrangement of the pixel electrodes, and the remaining portion is formed of an upper substrate having a common electrode coated with a metal. 제 1항에 있어서, The method of claim 1, 상기 메탈은 알루미늄인 것을 특징으로 하는 반사형 액정표시장치의 전극구조. Electrode structure of the reflective liquid crystal display device, characterized in that the metal is aluminum.
KR1020000055133A 2000-09-20 2000-09-20 Electrode Structure of Liquid Crystal on Silicon KR100590245B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020000055133A KR100590245B1 (en) 2000-09-20 2000-09-20 Electrode Structure of Liquid Crystal on Silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020000055133A KR100590245B1 (en) 2000-09-20 2000-09-20 Electrode Structure of Liquid Crystal on Silicon

Publications (2)

Publication Number Publication Date
KR20020022371A KR20020022371A (en) 2002-03-27
KR100590245B1 true KR100590245B1 (en) 2006-06-15

Family

ID=19689475

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000055133A KR100590245B1 (en) 2000-09-20 2000-09-20 Electrode Structure of Liquid Crystal on Silicon

Country Status (1)

Country Link
KR (1) KR100590245B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113721392B (en) * 2020-05-25 2022-11-04 华为技术有限公司 Silicon-based liquid crystal device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11160694A (en) * 1997-12-01 1999-06-18 Hitachi Ltd Color liquid crystal panel and projection liquid crystal display device
KR19990051266A (en) * 1997-12-19 1999-07-05 전주범 Automatic recording device of video cassette recorder
KR20000040380A (en) * 1998-12-18 2000-07-05 윤종용 Method for manufacturing thin film transistor substrate for liquid crystal display device using 4 masks and thin film transistor substrate for liquid crystal display device
KR20020018265A (en) * 2000-09-01 2002-03-08 김순택 Electrode Structure of Liquid Crystal on Silicon

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11160694A (en) * 1997-12-01 1999-06-18 Hitachi Ltd Color liquid crystal panel and projection liquid crystal display device
KR19990051266A (en) * 1997-12-19 1999-07-05 전주범 Automatic recording device of video cassette recorder
KR20000040380A (en) * 1998-12-18 2000-07-05 윤종용 Method for manufacturing thin film transistor substrate for liquid crystal display device using 4 masks and thin film transistor substrate for liquid crystal display device
KR20020018265A (en) * 2000-09-01 2002-03-08 김순택 Electrode Structure of Liquid Crystal on Silicon

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KR1020020018265 A:인용발명으로 사용불가하나 참고함

Also Published As

Publication number Publication date
KR20020022371A (en) 2002-03-27

Similar Documents

Publication Publication Date Title
JP5313373B2 (en) Liquid crystal display
KR100397399B1 (en) transflective liquid crystal display and manufacturing method thereof
US7508471B2 (en) Transflective liquid crystal display
CN100492141C (en) Vertical alignment active matrix liquid crystal display device
US6888596B2 (en) Liquid crystal display device
JP3732956B2 (en) Reflective liquid crystal display
KR101112537B1 (en) Liquid crystal display having multi domain and panel for the same
US6839105B2 (en) Liquid crystal device and electronic apparatus provided with the same
KR20000011930A (en) Active matrix type liquid crystal display device
KR20090116095A (en) Liquid crystal display
US7538838B2 (en) Semi-transmissive liquid crystal display panel
KR20150083684A (en) Display device and fabrication method thereof
KR100760940B1 (en) Liquid crystal display device and method for fabricating the same
KR20040050624A (en) In plane switching mode liquid crystal display device having improved aperture ratio
JP4483065B2 (en) Liquid crystal display
KR20050046908A (en) Array substrate, method of manufacturing the same and liquid crystal display apparatus having the same
KR100590245B1 (en) Electrode Structure of Liquid Crystal on Silicon
US7542115B2 (en) Semi-transmissive liquid crystal display panel
US6031592A (en) Reflection LCD with counter-reflector having openings at intersection areas of bus lines
KR20040084453A (en) Liquid crystal display
KR100365518B1 (en) Electrode Structure of Liquid Crystal on Silicon
KR100411974B1 (en) Liquid crystal display device
JP2000162583A (en) Liquid crystal display device and reflection type liquid crystal display device
JP3228735B2 (en) Liquid crystal electro-optical device
KR100538296B1 (en) Liquid Crystal Display Applied Reflective and Transmissive

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130522

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20140526

Year of fee payment: 9

LAPS Lapse due to unpaid annual fee