KR100576552B1 - Shift structure of dielectric waveguide and standard waveguide of millimeter wave band - Google Patents

Abstract

The present invention relates to a transition structure between a dielectric waveguide and a standard waveguide in a millimeter wave band, and directly connects a dielectric resonator type element to a standard waveguide without converting it to another transmission line, thereby reducing loss in system configuration and providing excellent signal between elements. The objective is to provide a millimeter wave band dielectric waveguide and a standard waveguide transition structure to obtain isolation, ease of fabrication and reduce system size and manufacturing costs.

In order to achieve the above object, the present invention provides a signal transition structure of a dielectric waveguide and a standard waveguide in a single-layered and multi-layered dielectric substrate, the dielectric substrate comprising: a topmost conductor surface; A lowermost conductor surface disposed horizontally with respect to the uppermost conductor surface and having an opening having a predetermined width for mating the dielectric substrate and the standard waveguide at a point connected with the standard waveguide; A via column in which a plurality of vias are arranged in a predetermined pattern between the uppermost conductor surface and the lowermost conductor surface; A dielectric waveguide connected vertically to the standard waveguide and formed by a pattern of the via row to be a signal flow path; And a cavity resonator positioned at a point commonly belonging to the external waveguide and the dielectric waveguide, and including a cavity resonator for selecting a signal to be transitioned to a standard waveguide among signals flowing through the dielectric waveguide by the pattern of the via string. Provides a transition structure of waveguides and standard waveguides.

Millimeter wave, dielectric waveguide, standard waveguide, transition structure, cavity resonator, aperture

Description

Shift structure of dielectric waveguide and standard waveguide of millimeter wave band             

1 is a transition structure diagram of a dielectric waveguide and a standard waveguide in a multilayer substrate.

FIG. 2 is a view of the transition structure seen from the cutting plane generated along FIG. 1C. FIG.

3 is a bottom perspective view of the dielectric waveguide and standard waveguide in the multilayer substrate of FIG.

4 is a vertical connection diagram of a dielectric substrate and a dielectric cavity resonator in the structure of FIG.

5 is a transition structure diagram of a dielectric waveguide and a standard waveguide in a single layer substrate.

6 is a structural diagram of transition from dielectric waveguides having different heights to standard waveguides.

Figure 7 is a side view of Figure 6;

8 is a diagram showing an example of the structure of a stacked system using the structure of FIG.

9 is a diagram showing a simulation result of FIG.

* Description of the symbols for the main parts of the drawings *

10: dielectric substrate 11: top conductor surface

12: lowest conductor surface 13: opening

14: via row 15: via

16: dielectric waveguide 17: cavity resonator

18: Via Pad 19: External Via

20: standard waveguide 31: strip transmission line

32: passive element 33: waveguide type element

34: MMIC

The present invention relates to a transition structure of a dielectric waveguide and a standard waveguide in the millimeter wave band, and more specifically, a point where a dielectric waveguide and a standard waveguide using a via meet in a low temperature co-fired ceramic (LTCC) and another multilayer substrate manufacturing method. The present invention relates to the transition structure of the dielectric waveguide and the standard waveguide in the millimeter wave band, which reduces the insertion loss and the size of the waveguide by forming the cavity resonator and the opening in the cavity.

In general, the millimeter wave service system is used in applications such as outdoor communication, fixed wireless network access system, base station transmission for mobile communication, vehicle anti-collision radar, intelligent transport systems (ITS), and high speed transmission of 100Mbps or more in the future. It is expected that millimeter wave systems will be used in various fields with speed.

The most important problem in the development of the millimeter wave transmission / reception system is miniaturization and low cost, and the miniaturization and low price of the millimeter wave system requires a structure using a highly integrated multilayer substrate such as SIP (System In Package).

However, in the case of using the multilayer board structure, when the frequency band becomes millimeter wave, performance degradation occurs due to loss of the transmission line as well as interference between transmission lines due to miniaturization. In order to reduce interference and performance degradation between the transmission lines, transmission lines or passive devices are designed using waveguides. In particular, standard waveguides are used for the use of high-performance components having excellent electrical characteristics.

At this time, the transition structure for the dielectric waveguide and the standard waveguide inside the multilayer substrate is needed, but since the transition from the dielectric waveguide constructed in the substrate to the standard waveguide is not easy, it has a conversion structure to other types of transmission lines. This was difficult.

The transition structure from a transmission line in a conventional substrate to a standard waveguide is mostly a structure connected from a microstrip line to a waveguide or from a dielectric waveguide to a standard waveguide.

When using the microstrip line-to-waveguide transition, the waveguide-type device requires one more transition, so that the loss increases and the external mechanical structure has to be considered. In addition, even when the structure is connected from the dielectric waveguide to the standard waveguide, the structure is complicated, so many variables to be considered are sensitive to process errors, and there is a disadvantage that it cannot be used in a single layer substrate.

Therefore, the present invention proposed to solve this problem is to connect the dielectric resonator element directly to the standard waveguide without converting to other transmission line, reducing the loss in system configuration, each layer in the multi-layer substrate is separated from other layers By providing excellent signal isolation between devices, we can provide a transition structure of millimeter wave band dielectric waveguides and standard waveguides that can be easily manufactured by reducing design variables and reduce system size and manufacturing cost. There is a purpose.

In order to achieve the above object, the present invention provides a signal transition structure of a dielectric waveguide and a standard waveguide in a single-layered and multi-layered dielectric substrate, the dielectric substrate comprising: a topmost conductor surface; A lowermost conductor surface disposed horizontally with respect to the uppermost conductor surface and having an opening having a predetermined width for mating the dielectric substrate and the standard waveguide at a point connected with the standard waveguide; A via column in which a plurality of vias are arranged in a predetermined pattern between the uppermost conductor surface and the lowermost conductor surface; A dielectric waveguide connected vertically to the standard waveguide and formed by a pattern of the via row to be a signal flow path; And a cavity resonator positioned at a point commonly belonging to the external waveguide and the dielectric waveguide, and including a cavity resonator for selecting a signal to be transitioned to a standard waveguide among signals flowing through the dielectric waveguide by the pattern of the via string. Provides a transition structure of waveguides and standard waveguides.

The dielectric substrate may further include a via pad formed of a plurality of layers to connect the vias of the via rows to each other.

The dielectric substrate may include a plurality of external vias outside the dielectric waveguide and the cavity resonator when the via rows are located inside the conductor wall of the standard waveguide, thereby improving grounding ability with the standard waveguide.

The dielectric waveguide and the dielectric cavity resonator are connected by via rows of vertical or oblique or staircase structures.

The size and position of the opening or cavity resonator may be adjusted to impedance match the dielectric waveguide and the standard waveguide.

If the height of the dielectric waveguide of the multilayer substrate is different from the optimum height for the transition, the via and the conductor surface may be stacked in multiple stages to form a stepped structure having a different length for each layer to impedance match the dielectric waveguide and the standard waveguide. Is done.

The above objects, features and advantages will become more apparent from the following detailed description taken in conjunction with the accompanying drawings. Hereinafter, with reference to the accompanying Figures 1 to 9 will be described in detail a preferred embodiment of the present invention.

1 is a transition structure diagram of a dielectric waveguide and a standard waveguide in a multilayer substrate, and FIG. 2 is a transition structure view in a cut along the C of FIG. 1, and FIG. 3 is a bottom perspective view of the dielectric waveguide and the standard waveguide in the multilayer substrate of FIG. 4 is a vertical connection structure of a dielectric substrate and a dielectric cavity resonator in the structure of FIG. 1, FIG. 5 is a transition structure diagram of a dielectric waveguide and a standard waveguide in a single layer substrate, and FIG. 6 is a standard in a dielectric waveguide having a different height. FIG. 7 is a side view of FIG. 6, FIG. 8 is a diagram showing a structural example of a stacked system using the structure of FIG. 1, and FIG. 9 is a diagram showing the simulation result of FIG.

As shown in Fig. 1, in the basic structure of the transition according to the present invention, the dielectric substrate 10 is vertically connected in the structure where the standard waveguide 20 and the lowest conductor surface 12 of the dielectric substrate 10 meet.

The dielectric substrate 10 includes a top conductor surface 11; An opening 13 having a predetermined width arranged horizontally with respect to the uppermost conductor surface 11 and for matching the dielectric substrate 10 and the standard waveguide 20 to a point connected with the standard waveguide 20; A lowermost conductor surface 12 having a; A via row 14 in which a plurality of vias 15 are arranged in a predetermined pattern between the uppermost conductor surface 11 and the lowermost conductor surface 12; A dielectric waveguide (16) connected perpendicular to the standard waveguide (20) and formed by a pattern of the via columns (14) to become a signal flow path; And a position located in common with the standard waveguide 20 and the dielectric waveguide 16, and formed by the pattern of the via lines 14 to the standard waveguide 20 among signals flowing through the dielectric waveguide 16. It includes a cavity resonator 17 to pick out the signal to be transitioned.

The uppermost conductor surface 11 is positioned on the top of the dielectric substrate 10, and a multilayer conductor surface is stacked below.

The lowermost conductor surface 12 is positioned at the lowermost portion of the dielectric substrate 10 and configured to be parallel to the uppermost conductor surface 11, and is connected through the standard waveguide 20 and the opening 13 to form a dielectric substrate ( 10) and the standard waveguide 20 are matched.

The via rows 14 are arranged in a plurality of vias 15 in a predetermined pattern, and form the dielectric waveguide 16 and the cavity resonator 17 and are connected by the via pads 18.

The dielectric waveguide 16 is formed by the uppermost conductor surface 11, the lowest conductor surface 12, the via rows 14, and the via pads 18 in this embodiment to be a signal flow path.

The signal flowing through this dielectric waveguide 16 is transitioned to the standard waveguide 20 by the cavity resonator 17.

The cavity resonator 17, like the dielectric waveguide 16, is formed by the uppermost conductor surface 11, the lowermost conductor surface 12, the via rows 14, and the via pads 18 to form the dielectric waveguide ( 16) allow the signal flowing through to the standard waveguide 20 to transition.

That is, the present invention constitutes a dielectric cavity resonator 17 in the dielectric substrate 10 for the signal transition from the dielectric waveguide 16 to the standard waveguide 20, and the dielectric substrate meets the standard waveguide 20. An opening 13 is formed in the lowest conductor surface 12 of (10) to be matched.

At this time, the top conductor surface 11, the bottom conductor surface 12, and the via pad 18 of the dielectric waveguide 16, the dielectric cavity resonator 17 are connected to each other in the same layer, and the dielectric cavity resonator 17 and the dielectric waveguide are connected to each other. The vertical plane of (16) is redesigned to approximate its original characteristics using the via rows 14. In this case, it is possible to improve the isolation of the signal by reducing the distance between the via rows 14 and increasing the heat.

의 비율로 일정하게 축소된다. As the dielectric constant changes in the design of the dielectric waveguide 16 in the dielectric multilayer substrate 10, the overall size of the dielectric waveguide 16 designed in air is expressed as a relation of relative permittivity in all x, y, and z axes.

The ratio is reduced uniformly.

Therefore, the relative size of the dielectric waveguide 16 is smaller than that of the standard waveguide 20, so that the position of the via rows 14 for the dielectric waveguide 16 and the dielectric cavity resonator 17 is the conductor of the standard waveguide 20. It can be smaller than the wall.

In this case, an extra external via 19 is placed inside the dielectric substrate 10 and outside the dielectric waveguide 16 and the dielectric cavity resonator 17 to establish the grounding capability of the dielectric substrate 10 and the standard waveguide 20. The improvement can prevent the deterioration of the characteristics of the signal transition. In addition, by using an oblique structure when connecting the dielectric waveguide 16 and the dielectric cavity resonator 17, it is possible to reduce the discontinuity portion to reduce the occurrence of parasitic components.

FIG. 2 is a cross-sectional view of the cutting plane C of FIG. 1 and FIG. 3 is a view of the transition structure from below. Since the via 15 and the via pad 18 of the dielectric substrate 10 are hidden inside the dielectric substrate 10, only the vias 15 are indicated by dotted lines.

As shown in Figs. 2 and 3, the cavity resonator 17 having the size of A × B × h and the opening 13 of the lower surface of the dielectric substrate 10 having the size of A × B are used at the frequency used. According to the band and the size of the standard waveguide 20, the center of the opening 13 and the center of the dielectric cavity resonator 17 are located at the center of the standard waveguide 20.

In addition, the height h of the dielectric waveguide 16 should be adjusted to satisfy the signal transition and the characteristics of the waveguide device.

4 illustrates a structure in which the oblique structure used when connecting the dielectric waveguide 16 and the dielectric cavity resonator 17 is removed from the signal transition structure proposed in FIG. 1, and the design is simple.

The structure proposed in the present invention is simple and can be used for a single layer dielectric substrate 10. FIG. 5 shows a structure when the single layer dielectric substrate 10 is used. As shown in FIG. 1, the standard waveguide 20 and the dielectric substrate 10 vertically meet and form the dielectric waveguide 16 and the dielectric cavity resonator 17 through the via rows 14, and the lower surface of the dielectric substrate 10. Has an opening 13. Only the via pad 18 is different from that of the multilayer board of FIG. 1.

FIG. 6 shows a transition structure from dielectric waveguide 16 having different heights to standard waveguide 20 inside multilayer dielectric substrate 10. As shown in FIG. The dielectric waveguide 16 in the actual dielectric substrate 10 may exhibit optimal properties at a given height. In order to improve the characteristics from the low-level dielectric waveguide 16 to the standard waveguide 13, it is shown in FIG. 1 by matching the characteristic impedance of the dielectric waveguide using a stepped structure from the conductor surface formed in the via 15 and each layer. It is a structure that connects with one transition structure.

FIG. 7 shows the side view of FIG. 6 and can easily see the form of the proposed stepped structure. At this time, the length of each step varies according to the height difference of the dielectric waveguide and the frequency used.

8 is a diagram showing an example of a stacked system structure using the structure of the present invention. In the waveguide transition structure proposed in the present invention, since all matching structures are made in the dielectric substrate 10, an upper layer having the uppermost layer of the dielectric waveguide 16 as a ground plane is possible. The MMIC 34, the strip-shaped transmission line 31, and the passive element 32 such as a filter or coupler are present in the upper layer, and the waveguide type element 33 is connected to the dielectric waveguide 16 in the lower layer by using the vertical transition (D). By using and using the signal transition (E) proposed in the present invention, it is possible to use the standard waveguide 20 down to reduce the size of the system and have flexibility in the overall system design.

Fig. 9 shows the simulation result of the structure of Fig. 1, where the standard waveguide 20 uses WR-22, the frequency of use is set to 40 GHz, and the length of the entire structure of the waveguide transition is 15 mm.

As described above, the present invention has a signal transition structure from the dielectric substrate 10 having the dielectric waveguide 16 to the standard waveguide 20 among the multilayer boards such as low temperature co-fired ceramic (LTCC). And a cavity resonator 17 at a portion where the dielectric waveguide 16 and the standard waveguide 20 composed of the vias 15 and the conductor surfaces 11 and 12 are vertically connected to each other. It is a structure to transmit, and this structure is applicable also in the case of a single | mono layer board.

As described above, the present invention can directly connect the dielectric waveguide-type device without any other transition structure, and the size is reduced by eliminating 1/4 length of the wavelength in the waveguide short-circuit plane used in general opening connection. It is possible to achieve a desired registration by the opening of, thereby simplifying the design.

In addition, due to the simplicity of the structure, it can be used in a single layer structure, and the proposed structure can be easily applied to a stacked system for miniaturizing the system since all of the structures for matching exist inside the dielectric substrate and have a planar structure. .

Claims (6)

In the signal transition structure of dielectric waveguide and standard waveguide in single layer and multilayer dielectric substrate, The dielectric substrate, Top conductor surface; A lowermost conductor surface disposed horizontally with respect to the uppermost conductor surface and having an opening having a predetermined width for mating the dielectric substrate and the standard waveguide at a point connected with the standard waveguide; A via column in which a plurality of vias are arranged in a predetermined pattern between the uppermost conductor surface and the lowermost conductor surface; A dielectric waveguide connected vertically to the standard waveguide and formed by a pattern of the via row to be a signal flow path; And Located at a point commonly belonging to the external waveguide and the dielectric waveguide, and comprises a cavity resonator to select a signal to be transitioned to a standard waveguide of the signals flowing through the dielectric waveguide formed by the pattern of the via column Transition structures of dielectric waveguides and standard waveguides in the millimeter wave band. The method of claim 1, The dielectric substrate further includes via pads formed of a plurality of layers to connect the vias of the via rows to each other. Transition structures of dielectric waveguides and standard waveguides in the millimeter wave band. The method of claim 1, The dielectric substrate When the via rows are located inside the conductor wall of the standard waveguide, a plurality of external vias are provided outside the dielectric waveguide and the cavity resonator to improve grounding ability with the standard waveguide. Transition structures of dielectric waveguides and standard waveguides in the millimeter wave band. The method of claim 1, The dielectric waveguide and the dielectric cavity resonator are connected by via rows of vertical or oblique or staircase structures. Transition structures of dielectric waveguides and standard waveguides in the millimeter wave band. The method of claim 1, By adjusting the size and position of the opening or cavity resonator to impedance match the dielectric waveguide and the standard waveguide Transition structures of dielectric waveguides and standard waveguides in the millimeter wave band. The method according to claim 1 or 2, If the height of the dielectric waveguide of the multilayer substrate is different from the optimum height for the transition, the via and the conductor surface may be stacked in multiple stages to form a stepped structure having a different length for each layer to impedance match the dielectric waveguide and the standard waveguide. Made up Transition structures of dielectric waveguides and standard waveguides in the millimeter wave band.

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