KR100574412B1 - LED package including group chip and method for producing the same - Google Patents

Abstract

The present invention relates to an LED device used as a light source of an LCD, an electronic board, a stroboscopic substitute used in a digital camera or a mobile phone, and more particularly, by using an LED chip manufactured through one LED production line, various light emission characteristics. A method and apparatus for manufacturing an LED package having a.

Chip, LED, Cutting, Wafer

Description

LED package including group chip and method for producing same             

1A to 1B show a light emitting device according to the prior art.

Figure 2 is a flow chart showing a manufacturing process of the LED package including a group chip in accordance with a preferred embodiment of the present invention.

3A and 3B illustrate a wafer cutting process in accordance with a preferred embodiment of the present invention.

Figures 4a and 4b is a view showing the structure of the LED package to which the anode wire bonding method according to the first preferred embodiment of the present invention. Figure showing the structure of the LED package applied.

6A and 6B illustrate the structure of an LED package to which a flip chip bonding method according to a third exemplary embodiment of the present invention is applied.

<Description of the symbols for the main parts of the drawings>

310: wafer cutting part

305: wafer cutting controller

355: Group Chip

400: substrate portion

410-1, 410-2: internal lead

The present invention relates to an LED device used as a light source of an LCD, an electronic board, a stroboscopic substitute used in a digital camera or a mobile phone, and more particularly, by using an LED chip manufactured through one LED production line, various emission characteristics A method and apparatus for manufacturing an LED package having a.

LED (Light-Emitting Diode, hereinafter referred to as 'LED'), when a forward voltage is applied to a semiconductor of a specific element, electrons and holes move in the positive-negative junction and recombine with each other. It refers to a device that emits light due to the difference in energy generated. The color of light emitted by the LED creates a wavelength depending on the composition of the semiconductor chip components, and this wavelength determines the color of the light. Aluminum Gallium Indium Phosphide (AlGaInP) chips, which are used mainly for high-brightness LEDs, are now available from Red to Amber.

Since the LED light has high light conversion efficiency, power consumption is very low, and the LED light can be miniaturized, thinned, and lightweight. In addition, since the service life is long and the thermal discharge is not performed, the preheating time is unnecessary, and the lighting and extinguishing speed is very fast.

1A and 1B, a light emitting device using a conventional LED chip is shown.

Referring to FIG. 1A, it can be seen that a plurality of chips 100-1, 100-2, and 100-3 are used in combination to produce a light emitting device that satisfies desired light emission characteristics. In the case of using such a plurality of chips, there is a problem in that the process is complicated and the manufacturing cost increases because the cutting, processing, and die bonding operations must be performed for each chip individually. In addition, it is difficult to adjust the amount of adhesive dotting during die bonding, resulting in a lot of process losses.

In the case of not combining a plurality of chips as illustrated in FIG. 1A, in order to satisfy desired light emission characteristics, a single single LED chip 150 may be manufactured and mounted as illustrated in FIG. 1B. That is, since the light emitting characteristics of the LED are determined according to the manufacturing process, there is a disadvantage in that a manufacturing line corresponding to each characteristic must be constructed in order to manufacture LED chips having various characteristics. In addition, when a single chip is used, product efficiency does not increase in proportion to the size of the chip, and there is a problem that a loss of light emission of about 10 to 20% occurs.

Accordingly, the present invention has been made to solve the above problems, to provide a method and apparatus for manufacturing an LED package having a variety of light emission characteristics using an LED chip manufactured through one LED production line.

Further, another object of the present invention is to provide a method that can eliminate the cumbersome manufacturing process that is added when using a plurality of LED chips in combination.

According to an aspect of the present invention to achieve the above object, there may be provided a flash device for a camera provided in the terminal.

Hereinafter, a preferred embodiment of an LED package including a group chip and a method of manufacturing the same according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings, in the description with reference to the accompanying drawings, the same regardless of the reference numerals Or corresponding elements will be given the same reference numerals and redundant description thereof will be omitted.

2 is a flow chart showing a manufacturing process according to the present invention, Figure 3 is a view showing a wafer cutting according to the flip chip according to a preferred embodiment of the present invention.

According to the present invention, the chips formed on the wafer in one manufacturing line are not individually cut, but are configured to cut a plurality of pieces into one group corresponding to predetermined light emission characteristics. In the past, chips formed on wafers produced on a manufacturing line once constructed were individually cut and used. Hereinafter, a chip cut by the conventional method will be referred to as an individual chip, and according to the present invention, a chip cut using a plurality of chips as a group will be referred to as a group chip.

Referring to Figures 2 and 3 will be described the manufacturing process according to the present invention.

In step S210, a wafer is made of a material such as sapphire, gallium arsenide, silicon carbide, and the like, and a mask is produced by a predetermined circuit design.

In step S220, a chip is formed on the wafer using the mask. That is, the electronic circuit capable of performing the LED function is formed by forming various kinds of films on the surface of the wafer and selectively etching specific portions using a mask.

In step S230, the wafer is cut in a preset manner. According to the conventional method, the chip on the wafer is cut individually, and then each LED is combined with a lead frame to complete the LED package. However, according to the present invention, it is configured to cut the plurality of chips into one group in the number and shape that can satisfy the light emission characteristics required in the LED package. After cutting the wafer so as to correspond to the predetermined group chip, a post-process for constructing the LED package is performed in step S240. The post process includes a series of chip fabrication processes such as bonding, packaging and inspection processes.

According to the present invention, after cutting the wafer in the form of the group chip, according to the manufacturing method of the package including the group chip, divided into a wire bonding structure and a flip chip structure, the wire bonding structure is an anode wire bonding Structure and unipolar wire bonding structure. Hereinafter, an anode wire bonding structure, a unipolar wire bonding structure, and a flip chip bonding structure will be described in detail with reference to the accompanying drawings.

3A and 3B illustrate a wafer cutting process in accordance with a preferred embodiment of the present invention.

Referring to FIG. 3A, a configuration of a wafer cutting device for cutting a plurality of chips into one group chip on a wafer is shown. The wafer sawing process includes a wafer cutting unit 310 for cutting a wafer using a diamond saw, and a wafer cutting controller for controlling the wafer cutting unit for cutting chips formed on the wafer in a predetermined shape and number. 305 is performed in the wafer cutting device 300.

In the wafer cutting process, the wafer is cut in accordance with a preset manner so as to have predetermined light emission characteristics.

Referring to FIG. 3B, a group chip 355 including three chips, a rectangular group chip 356 including four chips, and a rectangular group chip 357 including four chips are illustrated. have. However, the group chip is not limited to the number and shape of the illustrated, it is obvious that the group chip can be cut to include a variety of numbers and shapes. Hereinafter, a description will be given based on a case where three chips are cut into one group.

First Embodiment-Anode Wire Bonding Structure

4a and 4b is a view showing the structure of the LED device according to the anode wire method according to a preferred embodiment of the present invention.

Referring to Figure 4a, a perspective view of the LED package according to the wire method in the present invention is shown. Referring to FIG. 4B, a cross-sectional view of a group chip LED package consisting of anode wire bonding is shown. In FIG. 4B, general package components such as a molding resin, an outer case, etc. are omitted in order to avoid confusion in the description.

After mounting the group chip 355 according to the present invention in the center of the substrate unit 400 by surface mounting technology, the inner chip 410-1 and 410-2 are bonded with wires. Here, the substrate portion includes a PCB or a lead frame. Here, surface mount technology refers to a bonding technology applied when a circuit is configured to be electrically connected by bonding electronic components on surfaces of one or both surfaces of a substrate.

The group chip 355 may be mounted on the substrate 400 using a die bonder. After die bonding with the non-conductive adhesive using the die bonder, the first and second electrodes of the group chip are electrically connected to the inner leads 410-1 and 410-2 using a wire bonding device, respectively. In this case, in the case of using individual chips in the electrode and the bonding process, a process corresponding to the number of chips should be performed separately, but in the case of using the group chip according to the present invention, The steps can be processed in one process.

Second Embodiment-Single-pole Wire Bonding Structure

5a and 5b is a view showing the structure of the LED device according to the unipolar wire method according to a preferred embodiment of the present invention.

Referring to Figure 5a, a perspective view of the LED package according to the wire method in the present invention is shown. Referring to FIG. 5B, a cross-sectional view of a group chip LED package consisting of unipolar wire bonding is shown. In FIG. 5B, as shown in FIG. 4B, the illustration of general package components, such as a molding resin and an outer case, is omitted in order to avoid confusion in the description.

The group chip 355 according to the present invention is mounted in the center of the substrate 400 by the surface mounting technique. Here, the group chip 355 is not mounted in contact with the substrate 400, but is mounted on the inner lead 410-2 using a conductive adhesive, and has one inner lead 410-. Bond with 1) and wire.

The group chip 355 is wire bonded to the inner lead 410-2 by a conductive adhesive using a die bonder, and the number of die bonding times can be reduced by more than half compared to the first embodiment.

Since other descriptions are the same as or similar to those of the first embodiment, they will be omitted.

Third Embodiment-Flip Chip Bonding Structure

6A and 6B are diagrams illustrating a chip applied to a flip chip method according to a third exemplary embodiment of the present invention.

Referring to Figure 6a, a perspective view of the LED package according to the wire method in the present invention is shown. Referring to FIG. 6B, a cross-sectional view of a group chip LED package consisting of unipolar wire bonding is shown. In FIG. 6B, as shown in FIG. 4B, the illustration of general package components, such as a molding resin and an outer case, is omitted in order to avoid confusion in the description.

The group chip 355 according to the present invention is mounted in the center of the substrate 400 by the surface mounting technique. Here, the group chip 355 is not mounted in contact with the substrate 400, but is mounted on the inner leads 410-1 and 410-2 using conductive bumps, and a separate wire bonding operation is unnecessary. Do.

The group chip 355 is flip chip bonded to the inner leads 400-1 and 410-2 by a conductive adhesive using a die bonder. For example, in performing the flip chip bonding, solder or Bonding can be performed by forming a protruding solder bump made of a metallic material such as Au or Sn-Ag-based alloy.

Compared to the first embodiment, the number of flip chip bondings can be reduced by more than half.

Since other descriptions are the same as or similar to those of the first embodiment, they will be omitted.

Although the technical idea of the present invention has been described in detail according to the above-described embodiment, the above-described embodiment is for the purpose of description and not of limitation, and a person of ordinary skill in the art of the present invention It will be understood that various embodiments are possible within the scope.

As described above, according to the present invention, by using the LED chip manufactured through one LED production line, there is an effect that can produce an LED package having various light emitting characteristics.

In addition, another object of the present invention, when used in combination with a plurality of LED chips, there is an effect that can eliminate the cumbersome manufacturing process is added.

Although the above has been described with reference to a preferred embodiment of the present invention, those skilled in the art to which the present invention pertains without departing from the spirit and scope of the invention as set forth in the claims below It will be appreciated that modifications and variations can be made.

Claims (10)

In the method of manufacturing an LED package comprising a plurality of LED chips, (a) forming the plurality of LED chips on a wafer; (b) cutting a wafer to generate one group chip according to the number or shape of chips set according to the light emission amount of the plurality of LED chips; And (c) mounting the group chip on a substrate portion having an internal lead corresponding to an electrode of the group chip, and manufacturing an LED package. The method of claim 1, In the step (c), The group chip is a method of manufacturing an LED package, characterized in that the bonding by one of the method of anode wire bonding, unipolar wire bonding and flip chip bonding. The method of claim 2, The anode wire bonding is Mounting the group chip on the substrate; Wire bonding the first electrode and the second electrode of the group chip with the first internal lead and the second internal lead, respectively. Method of manufacturing an LED package comprising a. The method of claim 2, The unipolar wire bonding is Mounting the group chip on the first internal lead formed in the substrate by using a conductive contact agent, and electrically connecting the first electrode and the first internal lead of the group chip; Wire bonding the second electrode of the group chip with a second internal lead, respectively. Method of manufacturing an LED package comprising a. The method of claim 2, The flip chip bonding is Performing flip chip bonding with the first and second internal leads and the second internal lead formed on the substrate, respectively, of the group chip, and mounting the group chip on the substrate. Method of manufacturing an LED package comprising a. delete delete delete delete delete

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