KR100568278B1 - Non-reducinle dielectric ceramic composition, multilayer ceramic chip capacitor using the composition and method for preparing the multilayer ceramic chip capacitor - Google Patents
Non-reducinle dielectric ceramic composition, multilayer ceramic chip capacitor using the composition and method for preparing the multilayer ceramic chip capacitor Download PDFInfo
- Publication number
- KR100568278B1 KR100568278B1 KR1020030079406A KR20030079406A KR100568278B1 KR 100568278 B1 KR100568278 B1 KR 100568278B1 KR 1020030079406 A KR1020030079406 A KR 1020030079406A KR 20030079406 A KR20030079406 A KR 20030079406A KR 100568278 B1 KR100568278 B1 KR 100568278B1
- Authority
- KR
- South Korea
- Prior art keywords
- dielectric
- composition
- glass composition
- multilayer ceramic
- ceramic capacitor
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 67
- 239000000919 ceramic Substances 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims description 4
- 239000003990 capacitor Substances 0.000 title abstract description 7
- 239000011521 glass Substances 0.000 claims abstract description 30
- 239000003985 ceramic capacitor Substances 0.000 claims abstract description 18
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 15
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 15
- 229910014307 bSiO Inorganic materials 0.000 claims abstract description 13
- 229910052788 barium Inorganic materials 0.000 claims abstract description 13
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 12
- 239000002002 slurry Substances 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229910052755 nonmetal Inorganic materials 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 5
- 238000001354 calcination Methods 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 239000007858 starting material Substances 0.000 claims description 5
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 claims description 4
- 238000005303 weighing Methods 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims 1
- 239000000463 material Substances 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 230000003247 decreasing effect Effects 0.000 description 5
- 238000010304 firing Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 150000002843 nonmetals Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
본 발명은 내환원성 유전체 자기 조성물과 이를 이용한 적층세라믹 콘덴서 및 그 제조방법에 관한 것이다. 이 유전체 자기조성물은 (SrxCa1-x)(Zr1-y-zTi yMnz)O3(단, 0≤x≤1.00, 0.15≤y≤0.5, 0.005≤z≤0.05)의 주성분과, 유리조성물의 부성분으로 이루어진다. 상기 유리조성물은 aM1O-bSiO2-cM22O3(여기서 M1은 Ca, Ba, Sr, Mg, Zn에서 선택된 1종 또는 2종이상이고, M2는 B, Al에서 선택된 1종 또는 2종)로 표현되며, 상기 a+b+c=1로서, 0.1≤a≤0.75, 0.2≤b≤0.6, 0≤c≤0.5로서, 유전체 자기조성물에서의 함량은 2.0~6.0중량% 포함된다. 본 발명에서는 이 유전체 자기조성물을 이용하는 적층세라믹 콘덴서와 그 제조방법 역시 제공된다. 본 발명의 적층세라믹 콘덴서는 유전율이 60이상이고 정전용량 온도변화율이 470±60ppm/℃ 또는 750±120ppm/℃ 를 만족시켜 온도보상용으로 사용가능하다. The present invention relates to a reduction resistant dielectric ceramic composition, a laminated ceramic capacitor using the same, and a method of manufacturing the same. This dielectric magnetic composition is composed of (Sr x Ca 1-x ) (Zr 1-yz Ti y Mn z ) O 3 (where 0 ≦ x ≦ 1.00, 0.15 ≦ y ≦ 0.5, and 0.005 ≦ z ≦ 0.05), It consists of the minor components of the glass composition. The glass composition is represented by aM1O-bSiO 2 -cM2 2 O 3 (wherein M1 is one or two or more selected from Ca, Ba, Sr, Mg, Zn, and M2 is one or two selected from B, Al) As a + b + c = 1, 0.1 ≦ a ≦ 0.75, 0.2 ≦ b ≦ 0.6, and 0 ≦ c ≦ 0.5, and the content of the dielectric magnetic composition may be 2.0 to 6.0% by weight. In the present invention, there is also provided a multilayer ceramic capacitor using the dielectric magnetic composition and a method of manufacturing the same. The multilayer ceramic capacitor of the present invention has a dielectric constant of 60 or more and the capacitance temperature change rate satisfies 470 ± 60 ppm / ℃ or 750 ± 120 ppm / ℃ can be used for temperature compensation.
내환원성, 콘덴서, Mn 산화물, 유리조성물Reduction Resistance, Capacitor, Mn Oxide, Glass Composition
Description
본 발명은 내환원성 유전체 자기 조성물과 이를 이용한 적층세라믹 콘덴서 및 그 제조방법에 관한 것으로, 보다 상세하게는 유전율이 60이상이고 온도변화율이 -900~-400ppm/℃를 만족시켜 온도보상용으로 사용가능한 유전체 자기 조성물과 이를 이용한 자기콘덴서 및 그 제조방법에 관한 것이다. The present invention relates to a reduced-resistance dielectric ceramic composition, a laminated ceramic capacitor using the same, and a method for manufacturing the same. More specifically, the dielectric constant is 60 or more and the temperature change rate is -900 to -400 ppm / 占 폚, which can be used for temperature compensation. A dielectric ceramic composition, a magnetic capacitor using the same, and a method of manufacturing the same.
전기, 전자기기 산업의 발전에 따라 소형이면서 대용량의 전자부품에 대한 요구가 커지고 있다. 적층세라믹 콘덴서는 전극과 고유전율계 세라믹을 교대로 적층한 다층구조로서, 소형이면서 대용량이라는 특징에 의해 폭 넓게 사용되고 있다. With the development of the electric and electronics industry, the demand for small and large-capacity electronic components is increasing. The multilayer ceramic capacitor is a multilayer structure in which electrodes and high dielectric constant ceramics are alternately stacked, and is widely used due to its small size and high capacity.
적층 세라믹 콘덴서는 귀금속인 Ag, Pd를 내부전극으로 채용하는 경우에는 유전재료로서 TiO2, BaTiO3, MgTiO3, CaTiO3, Re2O 3(Re는 희토류 금속) 등을 단체 또는 이들의 조합에 의해 목적하는 특성을 확보하고 있다. 그러나, Ag, Pd는 고가인 관계로 값싼 Ni 또는 Ni합금 등의 비금속을 내부전극으로 많이 이용하고 있다. Ni과 같은 비금속의 내부전극은 대기중에서 유전체층과 동시 소성되면 산화되므로, 환원성분위기에서 소성하여야 한다. 그러나, 환원성분위기에서 유전체층은 환원되어 비저항이 낮아진다. 따라서, 내환원성 유전체 자기조성물이 개발되고 있다. When the multilayer ceramic capacitor adopts Ag or Pd as the internal electrode, TiO 2 , BaTiO 3 , MgTiO 3 , CaTiO 3 , Re 2 O 3 (Re is a rare earth metal), etc. may be used as a dielectric material. Thereby securing the desired characteristics. However, since Ag and Pd are expensive, many non-metals such as cheap Ni or Ni alloys are used as internal electrodes. Since internal electrodes of nonmetals such as Ni are oxidized when co-fired with dielectric layers in the air, they should be fired in a reducing atmosphere. However, in the reducing component crisis, the dielectric layer is reduced to lower the specific resistance. Therefore, a reduction resistant dielectric self composition has been developed.
내환원성 유전체 자기조성물로는 (Ca,Sr)(Zr,Ti)O3 계가 많이 이용되고 있으며, 그 예로는 일본 공개특허공보 63-126177, 63-289709 등이 있다. (Ca, Sr) (Zr, Ti) O 3 system is widely used as a refractory dielectric magnetic composition, and examples thereof include JP-A-63-126177 and 63-289709.
일본 공개특허공보 63-126177호에는 (Sr1-x Cax )m (Zr1-y Ti y )O3의 주조성물과 MnO2, Li2O, RO(R:Ba, Sr, Ca, Mg), (Ti, Si)O2, Al2O3 의 부성분으로 조성되는 내환원성 유전체 자기조성물이 제시되어 있다. Japanese Laid-Open Patent Publication No. 63-126177 discloses a cast product of (Sr 1-x Ca x ) m (Zr 1-y Ti y ) O 3 and MnO 2 , Li 2 O, RO (R: Ba, Sr, Ca, Mg ), (Ti, Si) O 2 , Al 2 O 3 is a reduction resistant dielectric self-composition is presented.
일본 공개특허공보 63-289709호에는 (Sr1-x Cax )m (Tir1-y Zry )O3의 주조성물에 Mn, SiO2의 부성분을 함유하는 내환원성 유전체 자기조성물이 제시되어 있다. Japanese Patent Application Laid-Open No. 63-289709 discloses a reducing dielectric dielectric composition containing a subcomponent of Mn and SiO 2 in a casting of (Sr 1-x Ca x ) m (Tir 1-y Zr y ) O 3 . .
이들 선행기술은 유전체층을 박층화할 때 신뢰성이 부족한 것으로 알려져 있다. These prior arts are known to lack reliability when thinning dielectric layers.
이러한 문제를 개선하기 위하여 일본 공개특허공보 10-335169호에는 [(CaxSr1-x )O]m [(TiyZr1-y )O2]의 주조성물과 Mn산화물, Al산화물, 유리조성물로서 [(BazCa1-z)O]VSi2의 부성분을 포함하는 비유전체 자기재료가 제안되어 있습니다. 이 유전체 자기조성물은 1300℃이하에서 소결가능한 것으로 유전율이 29~44이고, 온도계수가 -150~+150ppm/℃의 범위에서 임의 제어가능하며, 25℃에서 비정항이 1×1013Ωcm이상의 특성을 가지고 있다. 이 조성물의 경우 소성온도가 높으므로 소성과정에서 내부전극과 세라믹층간의 수축편차가 심하므로 크랙 등 결함이 발생하기 쉬우므로 소성온도를 낮출 필요가 있다. 즉 니켈내부전극은 약 700℃이상부터 수축하기 시작하지만 세라믹은 약 1200℃부터 수축하므로 이 두 온도사이에서는 내부전극이 세라믹층을 층과 평행한 방향으로 당기게 되어 크랙이 발생한 소지가 있다. 또한 이 조성물은 유전율이 낮으므로 필름콘덴서를 대체하는 경우 표면실장시 차지하는 면적이 크기 때문에 유전율이 더 높은 조성물이 필요하다. In order to improve this problem, Japanese Patent Laid-Open No. 10-335169 discloses a cast product of [(Ca x Sr 1-x ) O] m [(Ti y Zr 1-y ) O 2 ], Mn oxide, Al oxide, and glass. As a composition, a non-dielectric magnetic material containing a subcomponent of [(Ba z Ca 1-z ) O] VSi 2 has been proposed. This dielectric magnetic composition is sinterable under 1300 ℃, has a dielectric constant of 29 ~ 44, arbitrary controllable temperature range of -150 ~ + 150ppm / ℃, and has non-constant at 1 ℃ 10 13 Ωcm or more at 25 ℃. have. In the case of this composition, since the firing temperature is high, the shrinkage deviation between the internal electrode and the ceramic layer is severe during the firing process, so defects such as cracks are likely to occur. That is, the nickel inner electrode starts to shrink from about 700 ° C. or more, but the ceramic shrinks from about 1200 ° C., so that the internal electrode pulls the ceramic layer in parallel with the layer between these two temperatures, causing cracks. In addition, since the composition has a low dielectric constant, a composition having a higher dielectric constant is required because the area occupied by surface mounting when replacing the film capacitor is large.
본 발명은 -55~+125℃ 범위에서 용량온도계수가 EIA T2H(470±60ppm/℃) 내지 U2J(750±120ppm/℃)를 만족시키며 유전율이 60이상인 유전체자기 조성물과 이를 이용한 적층세라믹 콘덴서와 그 제조방법을 제공하는데, 그 목적이 있다.In the present invention, the capacitance temperature coefficient in the range of -55 ~ +125 ℃ satisfies EIA T2H (470 ± 60ppm / ℃) to U2J (750 ± 120ppm / ℃), the dielectric ceramic composition having a dielectric constant of 60 or more, and the laminated ceramic capacitor using the same To provide a manufacturing method, the object is.
상기 목적을 달성하기 위한 본 발명의 유전체 조성물은, The dielectric composition of the present invention for achieving the above object,
(SrxCa1-x)(Zr1-y-zTiyMnz)O3(단, 0≤x≤1.00, 0.15≤y≤0.5, 0.005≤z≤0.05)의 주성분과, 유리조성물의 부성분으로 이루어진다.As a main component of (Sr x Ca 1-x ) (Zr 1-yz Ti y Mn z ) O 3 (where 0 ≦ x ≦ 1.00, 0.15 ≦ y ≦ 0.5, 0.005 ≦ z ≦ 0.05) and as a subcomponent of the glass composition Is done.
또한, 본 발명의 적층세라믹 콘덴서는,In addition, the multilayer ceramic capacitor of the present invention,
복수의 유전체 세라믹 층과 상기 유전체 세라믹 층 사이에 형성된 내부 전극 및 상기 내부 전극에 전기적으로 접속된 외부 전극을 포함하고, An inner electrode formed between the plurality of dielectric ceramic layers and the dielectric ceramic layer, and an outer electrode electrically connected to the inner electrode,
상기 유전체 세라믹 층은, The dielectric ceramic layer,
(SrxCa1-x)(Zr1-y-zTiyMnz)O3(단, 0≤x≤1.00, 0.15≤y≤0.5, 0.005≤z≤0.05)의 주성분과, 유리조성물의 부성분으로 조성되는 유전체 자기조성물의 소결체이고, 상기 내부 전극은 비금속의 도전 성분을 포함하여 구성된다.As a main component of (Sr x Ca 1-x ) (Zr 1-yz Ti y Mn z ) O 3 (where 0 ≦ x ≦ 1.00, 0.15 ≦ y ≦ 0.5, 0.005 ≦ z ≦ 0.05) and as a subcomponent of the glass composition A sintered body of the dielectric magnetic composition to be formed, wherein the internal electrode includes a non-metal conductive component.
상기한 본 발명의 유전체 자기조성물, 적층세라믹 콘덴서에서 부성분인 유리조성물은 aM1O-bSiO2-cM22O3(여기서 M1은 Ca, Ba, Sr, Mg, Zn에서 선택된 1종 또는 2종이상이고, M2는 B, Al에서 선택된 1종 또는 2종)로 표현되며, 상기 a+b+c=1로서, 0.1≤a≤0.75, 0.2≤b≤0.6, 0≤c≤0.5이고, 이 유리조성물의 함량은 2.0~6.0중량% 포함된다.The glass composition as a secondary component in the above-described dielectric ceramic composition and multilayer ceramic capacitor of the present invention is aM1O-bSiO 2 -cM2 2 O 3 (wherein M1 is one or two or more selected from Ca, Ba, Sr, Mg, and Zn, and M2 Is one or two selected from B and Al), wherein a + b + c = 1, and 0.1 ≦ a ≦ 0.75, 0.2 ≦ b ≦ 0.6, and 0 ≦ c ≦ 0.5, and the content of this glass composition. Is contained 2.0 to 6.0% by weight.
본 발명의 적층세라믹 콘덴서의 제조방법은, The manufacturing method of the multilayer ceramic capacitor of the present invention,
주성분의 합성분말과 부성분을 혼합한 슬러리를 유전체 시트로 성형하고, 유전체 시트사이에 내부전극을 형성하고 소결하는 적층세라믹 콘덴서의 제조방법에 있어서, 상기 유전체 시트가 출발원료로서 CaCO3, SrCO3, ZrO2, TiO2 및 Mn계 화합물을 (SrxCa1-x)(Zr1-y-zTiyMnz)O3(단, 0≤x≤1.00, 0.15≤y≤0.5, 0.005≤z≤0.05)의 조성으로 칭량하고 하소하여 얻은 합성분말:94~98중량%와 aM1O-bSiO2-cM22O3(여기서 M1은 Ca, Ba, Sr, Mg, Zn에서 선택된 1종 또는 2종이상이고, M2는 B, Al에서 선택된 1종 또는 2종)로 표현되며 상기 a+b+c=1로서, 0.1≤a≤0.75, 0.2≤b≤0.6, 0≤c≤0.5의 유리조성물:2.0~6.0중량%를 혼합한 슬러리를 성형한 것이며, 상기 소결은 1200~1320℃에서 행하는 것이다. In a method of manufacturing a multilayer ceramic capacitor in which a slurry comprising a mixture of a main component and a subcomponent is molded into a dielectric sheet, an internal electrode is formed between the dielectric sheets, and sintered, wherein the dielectric sheet is used as a starting material, CaCO 3 , SrCO 3 , or the like. ZrO 2 , TiO 2 and Mn-based compounds were converted into (Sr x Ca 1-x ) (Zr 1-yz Ti y Mn z ) O 3 (where 0 ≦ x ≦ 1.00, 0.15 ≦ y ≦ 0.5, and 0.005 ≦ z ≦ 0.05). Synthetic powder obtained by weighing and calcining in the composition of 94-98% by weight and aM1O-bSiO 2 -cM2 2 O 3 (wherein M1 is one or two or more selected from Ca, Ba, Sr, Mg, and Zn, and M2 Is one or two selected from B, Al) and the a + b + c = 1, 0.1≤a≤0.75, 0.2≤b≤0.6, 0≤c≤0.5 glass composition: 2.0 ~ 6.0 weight The slurry which mixed% is shape | molded, and the said sintering is performed at 1200-1320 degreeC.
상기 유전체 시트의 출발원료인 Mn계 화합물은 MnOm(1≤m≤2) 또는 MnCO3이며, 상기 하소는 1000~1200℃에서 행하는 것이다. The starting material of the dielectric sheet, the Mn-based compound is MnO m (1≤m≤2) or MnCO 3 , the calcination is carried out at 1000 ~ 1200 ℃.
이하, 본 발명을 상세히 설명한다. Hereinafter, the present invention will be described in detail.
본 발명에서는 (Sr,Ca)(Zr,Ti)O3를 주성분으로 하는 내환원성 유전재료에서 Mn을 주성분으로 하는데 특징이 있다. Mn이 부성분으로 첨가되는 경우에는 결정립계에 존재하는데 반해, 주성분으로 첨가하게 되면 결정립내에 존재하여 엑셉터로서 작용함으로써 저항을 높여준다. 이러한 본 발명의 유전체 조성물에는 부성분으로서 유리조성물이 함유되는데, 이 유리조성물로서 aM1O-bSiO2-cM22O3(여기서 M1은 Ca, Ba, Sr, Mg, Zn에서 선택된 1종 또는 2종이상이고, M2는 B, Al에서 선택된 1종 또는 2종)로 표현되는 것을 사용하는데도 특징이 있다. 이러한 본 발명의 유전재료에 대해 구체적으로 설명한다. The present invention is characterized in that Mn is a main component in a reduction-resistant dielectric material containing (Sr, Ca) (Zr, Ti) O 3 as a main component. When Mn is added as a minor component, it exists in the grain boundary, whereas when Mn is added as a main component, it is present in the grain and acts as an acceptor to increase resistance. The dielectric composition of the present invention contains a glass composition as a subcomponent, and as the glass composition, aM1O-bSiO 2 -cM2 2 O 3 (wherein M1 is one or two or more selected from Ca, Ba, Sr, Mg, and Zn, M2 is also characterized by using those represented by one or two selected from B, Al). The dielectric material of the present invention will be described in detail.
본 발명의 내환원성 유전체 자기조성물은, (SrxCa1-x)(Zr1-y-zTiy Mnz)O3의 주성분과 유리조성물로 구성된다. The reduction resistant dielectric self composition of the present invention is composed of a main component and a glass composition of (Sr x Ca 1-x ) (Zr 1-yz Ti y Mn z ) O 3 .
주성분은 (SrxCa1-x)(Zr1-y-zTiyMnz)O3의 일반식으로 가지는데, 여기서 x, y, z는 몰비율로 0≤x≤1.00, 0.15≤y≤0.5, 0.005≤z≤0.05를 만족한다. The main component has the general formula of (Sr x Ca 1-x ) (Zr 1-yz Ti y Mn z ) O 3 , where x, y, z are molar ratios of 0≤x≤1.00, 0.15≤y≤0.5 , 0.005 ≦ z ≦ 0.05 is satisfied.
여기서 x는 몰비율로 0.01~1.0이 바람직하다. x가 0.01미만의 경우에는 유전율이 저하된다. Here, x is preferably 0.01 to 1.0 in molar ratio. If x is less than 0.01, the dielectric constant decreases.
또한, y는 몰비율로 0.15~0.5가 바람직하다. y가 0.15미만의 경우에는 유전율이 저하되며, y가 0.5초과의 경우에는 정전용량의 온도계수가 좋지 않다. In addition, y is preferably 0.15 to 0.5 in molar ratio. If y is less than 0.15, the dielectric constant decreases, and if y is more than 0.5, the temperature coefficient of capacitance is not good.
또한, z는 몰비율로 0.005~0.05가 바람직하다. z가 0.005미만의 경우에는 소결이 잘 안되며, z가 0.05초과의 경우에는 저항이 떨어진다. In addition, z is preferably 0.005 to 0.05 in molar ratio. If z is less than 0.005, sintering is not good, and if z is greater than 0.05, the resistance drops.
본 발명에서 부성물로 함유되는 유리조성물은 aM1O-bSiO2-cM22O3(여기서 M1은 Ca, Ba, Sr, Mg, Zn에서 선택된 1종 또는 2종이상이고, M2는 B, Al에서 선택된 1종 또는 2종)가 바람직하다. 이 유리조성물에서 상기 a+b+c=1로서, 0.1≤a≤0.75, 0.2≤b≤0.6, 0≤c≤0.5를 만족한다. 또한, 유전체 자기조성물에서 유리조성물의 함량은 2.0~6.0중량%이고 나머지 주성분이 되는 것이 바람직하다.Glass compositions contained as a by-product in the present invention is aM1O-bSiO 2 -cM2 2 O 3 (wherein M1 is one or two or more selected from Ca, Ba, Sr, Mg, Zn, M2 is 1 selected from B, Al Species or two)). The a + b + c = 1 in the glass composition satisfies 0.1 ≦ a ≦ 0.75, 0.2 ≦ b ≦ 0.6, and 0 ≦ c ≦ 0.5. In addition, the content of the glass composition in the dielectric magnetic composition is 2.0 to 6.0% by weight, and preferably the remaining main component.
본 발명에서 유리조성물의 함량은 2.0중량% 미만의 경우에는 소결이 잘 안되며, 6.0중량% 초과의 경우에는 비저항과 유전율이 감소한다. 또한, 몰비율로 a가 0.1 미만의 경우에는 소결성과 유전율의 특성이 감소하며, a가 0.75을 초과하는 경우 유리조성물의 휘발성이 증가하여 소결성이 감소된다. 몰비율로 b가 0.2미만일 경우 또한 소결성이 감소하며 0.6초과인 경우에는 유전율과 신뢰성이 감소하게 된다. c가 0.5초과의 경우에는 휘발에 의한 소결성이 감소되거나 신뢰성이 감소한다.In the present invention, the content of the glass composition is not sintered well when less than 2.0% by weight, the specific resistance and dielectric constant is reduced when more than 6.0% by weight. In addition, when a is less than 0.1, the sinterability and dielectric constant of the mole ratio are decreased, and when a is greater than 0.75, the volatility of the glass composition increases to decrease the sinterability. If the molar ratio of b is less than 0.2, the sinterability is also reduced, and if it is greater than 0.6, the dielectric constant and reliability are decreased. When c is greater than 0.5, sinterability due to volatilization is reduced or reliability is reduced.
본 발명의 적층세라믹 콘덴서는 복수의 유전체 세라믹층과 상기 유전체 세라믹 층 사이에 형성된 내부전극 및 상기 내부전극에 전기적으로 접속된 외부전극을 포함한다. 본 발명에서는 상기 유전체 세라믹 층은 상기 내환원성 자기조성물을 이용한다. The multilayer ceramic capacitor of the present invention includes a plurality of dielectric ceramic layers, an internal electrode formed between the dielectric ceramic layers, and an external electrode electrically connected to the internal electrodes. In the present invention, the dielectric ceramic layer uses the reduction resistant magnetic composition.
유전체 세라믹 층은 (SrxCa1-x)(Zr1-y-zTiyMnz)O 3(단, 0≤x≤1.00, 0.15≤y≤0.5, 0.005≤z≤0.05)의 주성분과, 유리조성물의 부성분으로 조성되는 유전체 자기 조성물의 소결체를 이용하는 것이다. 여기서, 유리조성물은 aM1O-bSiO2-cM22O3(여기서 M1은 Ca, Ba, Sr, Mg, Zn에서 선택된 1종 또는 2종이상이고, M2는 B, Al에서 선택된 1종 또는 2종)가 바람직하다. 이 유리조성물에서 상기 a+b+c=1로서, 0.1≤a≤0.75, 0.2≤b≤0.6, 0≤c≤0.5를 만족하는 것이다. 이때의 유전체 자기 조성물의 함량은 유리조성물의 함량이 2.0~6.0중량%이고 나머지 주성분으로 한다. The dielectric ceramic layer is composed of a main component of (Sr x Ca 1-x ) (Zr 1-yz Ti y Mn z ) O 3 (where 0 ≦ x ≦ 1.00, 0.15 ≦ y ≦ 0.5, and 0.005 ≦ z ≦ 0.05), The sintered compact of the dielectric ceramic composition constituted as a subcomponent of the composition is used. Here, the glass composition is aM1O-bSiO 2 -cM2 2 O 3 (wherein M1 is one or two or more selected from Ca, Ba, Sr, Mg, Zn, M2 is one or two selected from B, Al) desirable. The a + b + c = 1 in the glass composition satisfies 0.1 ≦ a ≦ 0.75, 0.2 ≦ b ≦ 0.6, and 0 ≦ c ≦ 0.5. At this time, the content of the dielectric ceramic composition is 2.0 to 6.0% by weight of the glass composition and the remaining main components.
또한, 상기 내부전극은 비금속의 도전성분이면 가능하며, 대표적인 예로서 Ni, Cu 등이 있다. In addition, the internal electrode may be a conductive material of a nonmetal, and representative examples thereof include Ni and Cu.
본 발명의 적층세라믹 콘덴서의 제조방법은,The manufacturing method of the multilayer ceramic capacitor of the present invention,
먼저 출발원료로서, CaCO3, SrCO3, ZrO2, TiO2 및 Mn계 화합물을 (SrxCa1-x)(Zr1-y-zTiyMnz)O3(단, 0≤x≤1.00, 0.15≤y≤0.5, 0.005≤z≤0.05)의 조성으로 칭량한 후 혼합하고 건조후 하소한 다음, 분쇄하여 합성분말을 얻는다. 상기 Mn계 화합물은 MnOm(1≤m≤2) 또는 MnCO3가 있으며, 이때의 하소는 1000~1200℃가 바람직하다. 소성온도가 1000℃미만이면 성분간 반응이 부족하여 소결밀도가 저하되며 1200℃이상이면 분쇄시간이 지나치게 증가하므로 부적합하다.First, as starting materials, CaCO 3 , SrCO 3 , ZrO 2 , TiO 2 and Mn-based compounds were converted into (Sr x Ca 1-x ) (Zr 1-yz Ti y Mn z ) O 3 (where 0 ≦ x ≦ 1.00, 0.15 ≤ y ≤ 0.5, 0.005 ≤ z ≤ 0.05)), mixed, dried and calcined, and then ground to obtain a synthetic powder. The Mn-based compound is MnO m (1≤m≤2) or MnCO 3 , the calcination at this time is preferably 1000 ~ 1200 ℃. If the firing temperature is less than 1000 ℃, the reaction between the components is insufficient, the sintered density is lowered, and if the baking temperature is more than 1200 ℃, the grinding time is excessively increased, which is not suitable.
다음으로 상기 합성분말에 부성분으로 aM1O-bSiO2-cM22O3(여기서 M1은 Ca, Ba, Sr, Mg, Zn에서 선택된 1종 또는 2종이상이고, M2는 B, Al에서 선택된 1종 또는 2종)로 표현되며, 상기 a+b+c=1로서, 0.1≤a≤0.75, 0.2≤b≤0.6, 0≤c≤0.5의 유리조성물을 총 중량100%에서 2.0~6.0중량%되게 혼합하여 건조한다.Next, aM1O-bSiO 2 -cM2 2 O 3 (wherein M1 is one or two or more selected from Ca, Ba, Sr, Mg, and Zn, and M2 is one or two selected from B, Al, as an auxiliary component to the synthetic powder) Species), the a + b + c = 1, 0.1≤a≤0.75, 0.2≤b≤0.6, 0≤c≤0.5 by mixing the glass composition in a total weight of 100% to 2.0 ~ 6.0% by weight To dry.
상기 건조한 분말을 통상적으로 사용하는 바인더와 용매를 첨가하여 슬러리를 제조한 다음, 상기 슬러리를 이용하여 일정 형태의 시트상으로 형성한다. A slurry is prepared by adding a binder and a solvent which are commonly used for the dry powder, and then, are formed in a sheet form using the slurry.
성형된 시트위에 내부전극을 인쇄하고 인쇄된 시트를 다수개 적층하여 가압한다. 상기와 같이 적층된 적층물을 1200~1320℃의 온도에서 소결한다. 상기 소결칩의 양단에 외부전극을 형성한다. 소결온도가 1200℃ 미만이면 소결밀도가 충분하지 않으며 소결온도가 1320℃보다 높으면 결정립이 과다 성장하여 유전특성이 저하되고 내부전극 끊어짐이 심하여 용량이 감소되므로 부적합하다.An internal electrode is printed on the molded sheet, and a plurality of printed sheets are stacked and pressed. The laminate laminated as described above is sintered at a temperature of 1200 to 1320 ° C. External electrodes are formed at both ends of the sintered chip. If the sintering temperature is less than 1200 ℃ sintered density is not sufficient, if the sintering temperature is higher than 1320 ℃ unsuitable because the grain is excessively grown, the dielectric properties are lowered, internal electrode is severely broken and the capacity is reduced.
이하, 본 발명을 실시예를 통하여 보다 구체적으로 설명한다.Hereinafter, the present invention will be described in more detail with reference to Examples.
[실시예]EXAMPLE
주원료에 대한 출발원료로서 순도 99.5%이상의 순도를 갖는 CaCO3, SrCO3, ZrO, TiO2, MnOm(1≤m≤2) 또는 MnCO3 를 표 1의 주성분을 만족하도록 칭량한 후 물을 매질로 하여 볼 밀에서 20-40시간 혼합하였다. 이 혼합물을 건조 후 1000~1200℃에서 하소하고 분쇄하여 합성하였다. As starting material for the main raw material, CaCO 3 , SrCO 3 , ZrO, TiO 2 , MnO m (1≤m≤2) or MnCO 3 having a purity of 99.5% or more is weighed to satisfy the main components of Table 1 Was mixed in a ball mill for 20-40 hours. The mixture was dried and calcined at 1000-1200 ° C. and then ground to synthesize.
이 합성분말에 미리 하소 및 분쇄하여 표 1, 2의 유리조성물과 바인더 및 용매를 첨가하여 슬러리를 제조하고, 상기 슬러리를 이용하여 일정 형태의 시트상으로 성형하였다. 성형된 시트위에 Ni 내부전극을 인쇄하고, 인쇄된 시트를 다수개 적층하여 가압하였다. 상기와 같이 적층된 적층물을 일정 크기로 절단하고, 탈바인더한 다음, 성형체를 1200~1320℃ 온도 H2-H2O-N2 분위기에서 소성하였다. 소성된 칩을 재산화처리한 후 상기 소결칩의 양단에 구리를 주성분으로 하는 외부전극을 형성하여 적층세라믹 콘덴서를 제조하였다. 얻어지 칩샘플은 2.0mm×1.2mm×1.0mm 크기이고 유전체층은 6um, 층수는 5층으로 구성되었다. 이 칩샘플에 대해 전기적특성을 조사하고 그 결과를 표 1에 나타내었다. The synthetic powder was calcined and pulverized in advance, and glass compositions, binders, and solvents of Tables 1 and 2 were added to prepare a slurry, and the slurry was formed into a sheet form using the slurry. Ni internal electrodes were printed on the molded sheets, and a plurality of printed sheets were laminated and pressed. The laminate laminated as described above was cut to a certain size, debindered, and then the molded body was fired in an atmosphere of 1200 to 1320 ° C temperature H 2 -H 2 ON 2 . After the calcined chip was reoxidized, an external electrode mainly composed of copper was formed at both ends of the sintered chip, thereby manufacturing a multilayer ceramic capacitor. The obtained chip sample was 2.0 mm x 1.2 mm x 1.0 mm in size, composed of 6um of dielectric layers and 5 layers. The electrical characteristics of this chip sample were investigated and the results are shown in Table 1.
전기적특성으로, Electrical characteristics,
유전율은 1kHz, 1Vrms, 25℃의 조건으로 측정하고 정전용량의 온도계수는 25℃에 있어서 정전용량 C25 및 85℃에서의 정전용량 C125로부터 아래 식1에 의해 구하였다. The dielectric constant was measured under the conditions of 1 kHz, 1 Vrms, and 25 ° C., and the temperature coefficient of the capacitance was obtained from the capacitance C 25 and the capacitance C 125 at 85 ° C. at 25 ° C. according to Equation 1 below.
[계산식 1][Calculation 1]
TCC(ppm/℃)={(C85-C25)/C25}×{1/(85-25)}×106 TCC (ppm / ° C) = {(C85-C25) / C25} × {1 / (85-25)} × 10 6
비저항(Ωcm)은 25℃에서 DC50V를 60초간 인가하여 측정하였다. Specific resistance (Ωcm) was measured by applying DC 50V for 60 seconds at 25 ℃.
절연저항의 가속수명은 150℃, 100V/um의 조건하에 기준 이하의 저항이 되기까지의 시간을 측정 수명시간으로 하였다. The accelerated life of the insulation resistance is the measurement life time as the time until the resistance is below the reference under the condition of 150 ° C and 100 V / um.
표 1, 2에 나타난 바와 같이, 주성분인 (SrxCa1-x)(Zr1-y-zTiyMn z)O3에서 y>0.5인 비교재1의 경우 유전율의 온도계수가 과대하여 U2J의 허용편차를 벗어나서 부적합하였다. As shown in Tables 1 and 2, in the case of Comparative Material 1 having y> 0.5 in the main component (Sr x Ca 1-x ) (Zr 1-yz Ti y Mn z ) O 3 , the dielectric constant of the dielectric constant was excessive to allow U2J. Out of deviation was inadequate.
또한, 주성분인 (SrxCa1-x)(Zr1-y-zTiyMnz)O3 에서 z>0.05인 비교재2의 경우 절연저항 및 신뢰성의 평균수명이 감소하므로 부적합하였다.In addition, Comparative Material 2 having z> 0.05 in (Sr x Ca 1-x ) (Zr 1-yz Ti y Mn z ) O 3 , which is a main component, was not suitable because the average lifetime of insulation resistance and reliability decreased.
또한, 주성분인 주성분인 (SrxCa1-x)(Zr1-y-zTiyMnz)O 3에서 y<0.15인 비교재3의 경우 유전율이 저하되어 부적합하였다.In addition, in the case of Comparative Material 3 having y <0.15 in (Sr x Ca 1-x ) (Zr 1-yz Ti y Mn z ) O 3 which is the main component, the dielectric constant decreased and was not suitable.
또한, 부성분인 유리조성물의 함량이 6.0중량% 초과하는 비교재4의 경우 유전율이 과소하고 절연저항이 저하되므로 부적합하였다. In addition, Comparative Material 4 having a content of more than 6.0% by weight of the glass composition as a minor component was unsuitable because the dielectric constant was too low and the insulation resistance was lowered.
또한, 부성분인 aM1O-bSiO2-cM22O3(여기서 M1은 Ca, Ba, Sr, Mg, Zn에서 선택된 1종 또는 2종이상이고, M2는 B, Al에서 선택된 1종 또는 2종)에서 b<0.2인 비교재5의 경우 수명이 저하되어 부적합하였다. In addition, aM1O-bSiO 2 -cM2 2 O 3 (wherein M1 is one or two or more selected from Ca, Ba, Sr, Mg, and Zn, and M2 is one or two selected from B, Al) b In the case of Comparative Material 5 having <0.2, the service life decreased, which was unsuitable.
또한, 부성분인 aM1O-bSiO2-cM22O3(여기서 M1은 Ca, Ba, Sr, Mg, Zn에서 선택된 1종 또는 2종이상이고, M2는 B, Al에서 선택된 1종 또는 2종)에서 a<0.1인 비교재6의 경우 수명이 저하되어 부적합하였다. In addition, aM1O-bSiO 2 -cM2 2 O 3 (wherein M1 is one or two or more selected from Ca, Ba, Sr, Mg, and Zn, and M2 is one or two selected from B, Al) is a In the case of Comparative Material 6 having <0.1, the service life was reduced, which was not suitable.
상술한 바와 같이, 본 발명에 따르면 유전율이 60이상으로 종래에 비해 높고, 온도계수를 -900~-400ppm/℃범위로 조절하여 온도보상용으로 사용가능한 내환원유전체 자기조성물이 제공된다. 이 유전체 자기조성물은 온도 안정성, ESR 등의 특성이 우수하므로 필름콘덴서의 대체할 수 있으며, 전극재료에 비금속을 이용하는 것이 가능함으로써 제조비용을 대폭 저하시키는 것이 가능한 유전체자기조성물과 이 조성물을 적용한 자기콘덴서 및 그 제조방법이 제공된다. As described above, according to the present invention, a dielectric constant of 60 or more is higher than that of the related art, and a reducing dielectric dielectric composition is provided which can be used for temperature compensation by adjusting the temperature coefficient in the range of -900 to -400 ppm / ° C. This dielectric magnetic composition has excellent characteristics such as temperature stability and ESR, so it can be replaced with a film capacitor, and it is possible to use non-metal as the electrode material, which can significantly reduce the manufacturing cost, and the magnetic capacitor to which the composition is applied. And a method of manufacturing the same.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030079406A KR100568278B1 (en) | 2003-11-11 | 2003-11-11 | Non-reducinle dielectric ceramic composition, multilayer ceramic chip capacitor using the composition and method for preparing the multilayer ceramic chip capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030079406A KR100568278B1 (en) | 2003-11-11 | 2003-11-11 | Non-reducinle dielectric ceramic composition, multilayer ceramic chip capacitor using the composition and method for preparing the multilayer ceramic chip capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20050045358A KR20050045358A (en) | 2005-05-17 |
| KR100568278B1 true KR100568278B1 (en) | 2006-04-05 |
Family
ID=37245056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020030079406A KR100568278B1 (en) | 2003-11-11 | 2003-11-11 | Non-reducinle dielectric ceramic composition, multilayer ceramic chip capacitor using the composition and method for preparing the multilayer ceramic chip capacitor |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100568278B1 (en) |
-
2003
- 2003-11-11 KR KR1020030079406A patent/KR100568278B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20050045358A (en) | 2005-05-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100313234B1 (en) | Dielectric Ceramic Composition and Laminated Ceramic Capacitor | |
| KR100888020B1 (en) | Dielectric ceramics and multi layer ceramic capacitor | |
| KR100313003B1 (en) | Dielectric ceramic composition and monolithic ceramic capacitor using same | |
| KR100631995B1 (en) | Dielectric ceramic compositions for low temperature sintering and multilayer ceramic condenser using the same | |
| KR100341442B1 (en) | Monolithic ceramic capacitors | |
| KR100464588B1 (en) | Dielectric ceramic, methods for making and evaluating the same, and monolithic ceramic electronic component | |
| KR100259321B1 (en) | Dielectric ceramic composition and monolitic ceramic capacitor using the same | |
| JP3039397B2 (en) | Dielectric ceramic composition and multilayer ceramic capacitor using the same | |
| US7160827B2 (en) | Dielectric ceramic composition and multilayer ceramic capacitor | |
| US6310761B1 (en) | Dielectric ceramic composition and monolithic ceramic capacitor | |
| KR100307681B1 (en) | Dielectric ceramic composition, Laminated ceramic capacitor and Method for producing the laminate ceramic capacitor | |
| US6730624B2 (en) | Non-reducing dielectric ceramic, monolithic ceramic capacitor using the same, and method for making non-reducing dielectric ceramic | |
| KR20010095163A (en) | Multilayer ceramic chip capacitor and method for producing same | |
| US8385049B2 (en) | Dielectric ceramic and laminated ceramic capacitor | |
| US20140268489A1 (en) | Dielectric ceramic and laminated ceramic capacitor | |
| KR100271727B1 (en) | Laminated ceramic capacitor | |
| US7239501B2 (en) | Dielectric ceramic composition and laminated ceramic capacitor | |
| US8363383B2 (en) | Dielectric ceramic composition and ceramic electronic component | |
| KR100471155B1 (en) | Dielectric ceramic composition for low temperature sintering and multiplayer ceramic chip capacitor produced using the composition | |
| KR100568279B1 (en) | Non-reducinle dielectric ceramic composition, multilayer ceramic chip capacitor using the composition and method for preparing the multilayer ceramic chip capacitor | |
| KR100568278B1 (en) | Non-reducinle dielectric ceramic composition, multilayer ceramic chip capacitor using the composition and method for preparing the multilayer ceramic chip capacitor | |
| JP4400860B2 (en) | Dielectric porcelain composition | |
| KR100558442B1 (en) | Non-reducinle dielectric ceramic composition, multilayer ceramic chip capacitor using the composition and method for preparing the multilayer ceramic chip capacitor | |
| KR100276272B1 (en) | A dielectric ceramic composition with low reducibility and a method for manufacturing multi layer ceramic capacitor using it | |
| KR100778641B1 (en) | Dielectric ceramic and laminated ceramic capacitor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20091228 Year of fee payment: 5 |
|
| LAPS | Lapse due to unpaid annual fee |