KR100550735B1 - Eletrode structure of P-AlInGaN semiconductor and forming method thereof - Google Patents

Abstract

An electrode structure of a P-type gallium nitride compound semiconductor according to the present invention includes a P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor layer; A p-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) a contact layer formed on the upper surface of the semiconductor layer and highly reactive with hydrogen; A bonding pad layer formed on an upper surface of the contact layer and having low reactivity with oxygen; A diffusion barrier layer formed on a contact surface of the contact layer and the bonding pad layer; It is formed on the interface between the contact layer and the P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor layer by a natural reaction and / or heat treatment process P ⁺ type gallium nitride compound (P ⁺ -(Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor layer and a metal hydrogen compound layer (Metal-H) characterized in that it comprises ,

The method for forming a P-type gallium nitride compound semiconductor electrode structure according to the present invention is a natural oxide layer of a P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor Removing; Depositing a contact layer with a metal having excellent reactivity with hydrogen; Forming a bonding pad layer with a metal having low reactivity with oxygen and capable of forming a stable compound with the contact layer; It characterized in that it comprises the step of performing a heat treatment.

By the structure of the ohmic electrode and the method of forming the ohmic electrode according to the present invention, a metal hydrogen compound layer is formed to form a P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x +). y)} N) excellent ohmic electrode of the semiconductor device can be implemented.

Gallium Nitride, Semiconductor, Ohmic Electrode

Description

    Electrode structure of P-type gallium nitride compound semiconductor and method of forming electrode structure {Eletrode structure of P-AlInGaN semiconductor and forming method}

1 is a cross-sectional view of a deposition structure of a general P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor electrode as a comparative example.

2 is a P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor in which a metal hydrogen compound layer is formed before heat treatment in the ohmic electrode of the present invention. Section of an ohmic electrode.

3 shows the structure of an ohmic electrode of a P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor after heat treatment in the ohmic electrode of the present invention. Cross-section.

4 and 5 are diagrams showing the results of SIMS depth analysis to confirm the platinum hydrogen compound layer and titanium hydrogen compound layer according to the present invention.

6 is a view showing the current-voltage characteristics of the ohmic electrode prepared in Example 2.

FIG. 7 is a diagram showing current-voltage characteristics of an ohmic electrode subjected to heat treatment according to Example 3. FIG.

FIG. 8 is a view showing a result of specific contact resistance as the heat treatment time elapses according to Example 3. FIG.

9 is a view showing the current-voltage characteristics of the ohmic electrode prepared in Example 4.

10 is a view showing the current-voltage characteristics of the ohmic electrode subjected to the heat treatment according to the fifth embodiment.

11 is a view showing a result of specific contact resistance as the heat treatment time passes in the environment of Example 5;

12 is a view showing a change in the sheet resistance of the ohmic electrode according to the present invention.

<Explanation of symbols for the main parts of the drawings>

10: P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor layer

11: P ⁺ type gallium nitride compound (P ⁺ -(Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor layer

12 metal hydrogen compound layer 15 contact layer 16 diffusion barrier layer

20: bonding pad layer

The present invention relates to a structure of an ohmic electrode of a P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor and a method of forming an ohmic electrode, in particular , To form a metal hydrogen compound to implement an ohmic electrode of the P-type gallium nitride compound.

Conventional P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) method used to implement the ohmic electrode of the semiconductor, US Patent 5,563,422, 5,767,581, 5,877,558 , 6,093,965, which refer to two or more metals containing Au (gold), for example Au (gold), Ti (titanium), Ni (nickel), In (indium), Pt (platinum). It is known that the ohmic electrode is realized in the semiconductor of the P-type gallium nitride compound by the intermetallic compound by heat treatment.

However, this method merely suggests that two or more metals are stacked and heat treated to realize an ohmic electrode in a P-type gallium nitride compound semiconductor. There was a limit in achieving high efficiency.

In particular, in the conventional technique described above, due to the Mg-H compound formed during growth of the P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor, There is a difficulty in low carrier concentration and the formation of high quality P-type ohmic electrodes.

Specifically, in order to form a high-quality ohmic electrode, the carrier concentration should be 10 ¹⁸ cm ^-3 or more in the doping region where electrons can be tunneled, but the actual P-type gallium nitride compound (P- (Al) _x (In) The carrier concentration of the _y (Ga) _{1- (x + y)} N) semiconductor is very low, 10 ¹⁷ cm ⁻³ or less. The low carrier concentration raises the Schottky barrier, increasing the specific contact resistance of the metal and semiconductor interfaces, making it impossible to obtain high quality ohmic characteristics.

In addition, the p-type gallium nitride-based compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) exists on the surface of the semiconductor and reacts with each other at the interface between the metal and the semiconductor during heat treatment. This causes many problems such as an increase in leakage current, a decrease in reverse voltage breakdown, an abnormal threshold voltage characteristic, and the device reliability and lifespan are reduced.

Under this background, the present invention provides a P-type gallium nitride compound that can realize a light emitting diode having higher efficiency and reliability by forming a diffusion barrier layer in forming a metal-H compound layer in a P-type gallium nitride compound semiconductor. An object is to implement an ohmic electrode of a semiconductor.

In addition, by removing the natural oxide layer of the P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor, it is possible to realize low resistance, high transmittance, high thermal stability Suggests an ohmic electrode.

The ohmic electrode of the P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor according to the present invention is a P-type gallium nitride compound (P- ( Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor layer; A p-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) a contact layer formed on the upper surface of the semiconductor layer and highly reactive with hydrogen; A bonding pad layer formed on an upper surface of the contact layer and having low reactivity with oxygen; A diffusion barrier layer formed on a contact surface of the contact layer and the bonding pad layer; P ⁺ formed on the interface between the contact layer and the P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor layer by a natural reaction or heat treatment process Gallium nitride compound (P ⁺ -(Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor layer and metal hydrogen compound layer (Metal-H) is characterized in that it is included.

The method for forming an ohmic electrode of a P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor according to the present invention is a P-type gallium nitride compound (P- Removing the native oxide layer of (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor; Depositing a contact layer with a metal having excellent reactivity with hydrogen; Forming a bonding pad layer with a metal having low reactivity with oxygen and capable of forming a stable compound with the contact layer; Characterized in that the step of performing a heat treatment is performed.

By the structure and method of such an electrode, a P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor having high thermal and electrical stability and high efficiency Ohmic electrodes can be implemented.

The present invention starts from the four basic ideas described below, such as forming a metal hydrogen compound (Metal-H) layer capable of improving the efficiency of an ohmic electrode.

First, in order to effectively form a metal hydrogen compound (Metal-H) layer, a P-gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) is present in the semiconductor layer. By removing the native oxide layer, the surface energy is effectively lowered, and the metal and the P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor during the deposition of metal elements Promote reaction with hydrogen present in the wafer.

For example, a chemical or plasma may be used to remove a native oxide layer on a substrate of a P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor. To remove. In particular, when chemicals are used, elements such as F (fluorine), Cl (chlorine), S (sulfur) and alkali ions (OH) contained in the solution are passivated onto the P-type wafer, thereby It is possible to promote the reaction of the metal with hydrogen in the wafer during the deposition of the element. Preferably, the chemical is a BOE (Buffered Oxide Etch) solution.

Second, a metal hydrogen compound (Metal-H) layer is further formed by the metal of the contact layer in contact with the upper surface of the semiconductor layer, thereby forming a P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) Reduces the amount of hydrogen present in the semiconductor, increases the concentration of the carrier, and lowers the height of the Schottky barrier present at the interface, whereby the P-type gallium nitride compound (P- (Al) ) _x (In) _y (Ga) _{1- (x + y)} N) The surface of the semiconductor is modified to favor ohmic formation.

For example, Pt (platinum), Ti (titanium), Pd (palladium), Ni (nickel), Ta (tantalum), W (tungsten), Al (aluminum), Cr (chromium), V (vanadium), Ir Metals such as (iridium), Hf (hafnium), and Co (cobalt) are deposited by an electron beam evaporator, a thermal evaporator, a sputter, or the like.

In detail, when the metal and the like are deposited on the surface of the P-type wafer from which the natural oxide layer is removed, the metal and hydrogen in the P-type wafer are easily bonded, and the carrier increases in the P-type wafer. This is because hydrogen breaks the bond with magnesium and is released in the Mg-H compound which interferes with the P-type conductivity.

A metal hydrogen compound (Metal-H) between the metal layer deposited by this process and the P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor layer ) / P ⁺ gallium nitride compound (P ⁺ -(Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor layer is further formed.

Third, an oxide suppression layer is further formed on the upper surface of the contact layer as a bonding pad layer, thereby preventing oxygen from penetrating into the electrode, which is likely to occur during heat treatment, thereby effectively reducing unwanted interdiffusion between the metal and the semiconductor, Increase the thermal stability of the P-type ohmic electrode.

For example, an electron beam evaporator forms metals such as Au (gold), Pd (palladium), Ru (rucenium), Ni (nickel), W (tungsten), Co (cobalt), Mo (molybdenum), and Cu (copper). It deposits by a thermal evaporator, a sputter | spatter, etc.

Fourth, during the heat treatment, a metal compound layer is formed between the metal layer, specifically, the contact layer and the bonding pad layer, to form a diffusion barrier layer capable of preventing diffusion toward the electrode of nitrogen.

For example, when a heat treatment process is performed after the contact layer and the bonding pad layer are formed, a diffusion barrier layer is formed between the contact layer and the bonding pad layer by the compound of the above two metals.

As described above, the electrical, thermal and optical reliability of the P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor can be improved. have.

1 is a cross-sectional view of a deposition structure of an ohmic electrode of a P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor as a comparative example.

Referring to FIG. 1, a P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor layer 10, a contact layer 15, and a bonding pad Layers 20 are stacked.

The contact layer 15 includes Pt (platinum), Ti (titanium), Pd (palladium), Ni (nickel), Ta (tantalum), W (tungsten), Al (aluminum), Cr (chromium), and V ( A single layer of vanadium), Ir (iridium), Hf (hafnium), Co (cobalt), or an overlapping layer may be formed.

In addition, the bonding pad layer 20 may include Au (gold), Pd (palladium), Ru (rucenium), Ni (nickel), W (tungsten), Co (cobalt), Mo (molybdenum), and Cu (copper). A single layer, or overlapping layer of can be formed. Further, when the element of the bonding pad layer 20 is 'M', MO ('M' oxygen compound), M-Si ('M' silicon compound), MN ('M' nitrogen compound), MC ( 'M' carbon compound) may be formed.

2 is a P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor in which a metal hydrogen compound layer is formed before heat treatment in the ohmic electrode of the present invention. Is a cross-sectional view of an ohmic electrode.

2, before the contact layer 15 is formed, a natural oxide layer of a P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor is formed. After removal, when the metal constituting the contact layer 15 is deposited, the metal constituting the contact layer 15 and the P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) Hydrogen in the semiconductor is bonded to the metal hydrogen compound layer (Metal-H) 12 and the lower surface of the metal hydrogen compound layer 12 to form a P ⁺ type gallium nitride compound (P ⁺ -( Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor layer 11 is formed.

The metal hydrogen compound layer 12 is formed, thereby increasing carriers in the P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor, whereby the metal and semiconductor It is possible to lower the height of the Schottky barrier present at the interface.

On the other hand, the method of removing the natural oxide layer in the P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor is a chemical or plasma source used for etching To remove. In particular, when chemicals are used, elements such as F (fluorine), Cl (chlorine), S (sulfur) and alkali ions (OH) contained in the solution are passivated onto the P-type wafer, thereby It is possible to promote the reaction of the metal with hydrogen in the wafer during the deposition of the element. Preferably, the chemical is a BOE (Buffered Oxide Etch) solution.

3 is a cross-sectional view showing the structure of an ohmic electrode of a P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor after heat treatment.

Referring to FIG. 3, unlike FIG. 2, a diffusion barrier layer 16 is further formed between the bonding pad layer 20 and the contact layer 15 by heat treatment, and a P ⁺ type gallium nitride compound ( P ⁺ -(Al) _x (In) _y (Ga) _{1- (x + y)} N) The depth of the semiconductor layer 11 and the metal hydrogen compound layer (Metal-H) 12 becomes deeper.

The diffusion barrier layer 16 described above is a layer formed by mutually reacting the bonding pad layer 20 and the contact layer 15, and unwanted reaction between the metal and the semiconductor layer is suppressed. In addition, the reaction between the contact layer 15 and the P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor 10 is accelerated by the heat treatment process. P ⁺ -type gallium nitride compound (P ⁺ -(Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor by active reaction between the metal of the contact layer 15 and hydrogen As the depth of the layer 11 and the metal hydrogen compound layer (Metal-H) 12 is deepened, the concentration of the carrier is further increased. As a result, a better ohmic electrode can be realized.

Hereinafter, a concrete example of a process of forming an ohmic electrode of a P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor according to the present invention will be described.

Example 1

P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) is a trichloroethylene (TCE), acetone, methanol, distilled water in an ultrasonic cleaner at 60 ℃ Surface wash with 5 minutes. In order to remove the native oxide layer in the P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N), the BOE, a florin-based wet solution, Surface treatment for 10 minutes by boiling to remove the natural oxide layer.

Thereafter, Pt (platinum) and Ti (titanium), which are metals having excellent reactivity with hydrogen, are deposited individually using an electron beam evaporator as a contact layer.

4 and 5 are diagrams showing the results of SIMS depth analysis to confirm the platinum hydrogen compound layer and the titanium hydrogen compound layer according to the above-described embodiment.

Example 2

After removing the natural oxide layer in the P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor in the same manner as in Example 1, C- Circular-transmission line model (TLM) patterns are formed using photolithography, followed by metal deposition. The deposition deposits a Pt (platinum) 20 nm thick contact layer at a pressure of approximately 10 ⁻⁷ torr and a bonding pad layer of 20 nm thick Au (gold) which is less reactive with oxygen. After that, a lift-off process is performed with acetone to prepare an ohmic electrode having a TLM pattern.

6 is a view showing the current-voltage characteristics of the ohmic electrode prepared in Example 2.

Example 3

After the process of Example 2, the heat treatment is performed for 1 minute at a temperature of 600 ℃ in nitrogen, air, oxygen or argon atmosphere in a heating furnace to find the ohmic conditions.

FIG. 7 is a diagram showing current-voltage characteristics of an ohmic electrode subjected to heat treatment according to Example 3. FIG. 8 is a view showing a result of specific contact resistance as the heat treatment time passes in the environment of Example 3. FIG.

Referring to FIGS. 7 and 8, it can be seen that excellent ohmic contact characteristics have been obtained by the above-described process. In particular, it can be seen that the specific contact resistance value is a value up to 10 ^-5 Ωcm ² or less.

Example 4

Example 4 is largely the same as Example 2 except there is a difference only in depositing Ti (titanium) as a contact layer instead of Pt (platinum).

9 is a diagram showing current-voltage characteristics of the ohmic electrode fabricated in Example 4. FIG.

Example 5

Example 5 is a heat treatment for 1 minute at a temperature of 600 ℃ under a nitrogen, atmospheric, oxygen or argon atmosphere in a heating furnace in order to find the ohmic conditions after all the process of Example 4.

FIG. 10 is a diagram illustrating current-voltage characteristics of an ohmic electrode subjected to heat treatment according to Example 5. FIG. FIG. 11 is a view showing a result of specific contact resistance as the heat treatment time elapses in the environment of Example 5. FIG.

10 and 11, it can be seen that excellent ohmic contact characteristics were obtained by the above-described process.

Hereinafter, the sheet resistance value of the ohmic electrode to which the idea according to the present invention is applied will be described by comparing the conventional sheet resistance value.

12 is a view showing a change in the sheet resistance value of the ohmic electrode according to the present invention.

Referring to Figure 12, the concentration of the carrier in the P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor caused by the formation of the metal hydrogen compound layer An increase can be seen.

For example, lower surface resistance value is observed in the ohmic electrode in which the metal hydrogen compound layer was formed by this invention compared with the sheet resistance value of the conventional ohmic electrode in which the natural oxide layer was removed and the metal hydrogen compound layer was not formed. In the drawings, not only when the platinum-hydrogen compound and the titanium-hydrogen compound are formed by the method shown in the examples, but also the change of the sheet resistance values when the nickel-hydrogen compound and the palladium-hydrogen compound are formed under the same conditions.

The embodiment of the present invention provides a method of implementing a more reliable ohmic electrode by forming a metal hydrogen compound and removing a natural oxide layer and an ohmic structure according to the present invention. Can be easily created by adding, changing, etc.

By the structure of the ohmic electrode and the method of forming the ohmic electrode according to the present invention, a metal hydrogen compound layer is formed to form a P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x +). y)} N) excellent ohmic electrode of the semiconductor device can be implemented. Specifically, the specific contact resistance reaches 10 ⁻⁵ Ωcm ² or less, resulting in high thermal stability.

Claims (13)

A P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor layer; P-type gallium nitride compound (P + (Al) _x (In) _y (Ga) _{1- (x + y)} N) P ⁺ gallium nitride compound (P ⁺ -(Al) formed on the upper surface of the semiconductor layer _x (In) _y (Ga) _{1- (x + y)} N) semiconductor layer; The gallium nitride compound of the P ⁺ type _{^{(P + - (Al) x}} (In) y (Ga) 1- (x + y) N) metal hydrogen compound (Metal-H) formed on the semiconductor layer; A contact layer formed on the metal hydrogen compound layer (Metal-H) and highly reactive with hydrogen; A bonding pad layer formed on the contact layer and an oxidation inhibiting layer; A diffusion barrier layer formed between the contact layer and the bonding pad layer, the diffusion barrier layer formed of a compound of a metal material provided on the contact layer and a metal material provided on the bonding pad layer; An electrode structure of a P-type gallium nitride compound semiconductor comprising a. The method of claim 1, The bonding pad layer may be a single layer of Au (gold), Pd (palladium), Ru (rucenium), Ni (nickel), W (tungsten), Co (cobalt), Mo (molybdenum), Cu (copper), or An electrode structure of a P-type gallium nitride compound semiconductor having a multilayer structure of two or more layers. The method of claim 1, The bonding pad layer may include one element of Au (gold), Pd (palladium), Ru (rucenium), Ni (nickel), W (tungsten), Co (cobalt), Mo (molybdenum), or Cu (copper). M 'is a single layer or two layers of MO (' M 'oxygen compound), M-Si (' M 'silicon compound), MN (' M 'nitrogen compound), MC (' M 'carbon compound) The electrode structure of the p-type gallium nitride compound semiconductor characterized by the above multilayer structure. The method of claim 1, The contact layer is Pt (platinum), Ti (titanium), Pd (palladium), Ni (nickel), Ta (tantalum), W (tungsten), Al (aluminum), Cr (chromium), V (vanadium), Ir An electrode structure of a P-type gallium nitride compound semiconductor, which is a single layer of (iridium), Hf (hafnium), Co (cobalt), or a multilayer structure of two or more layers. Removing the native oxide layer of the P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor layer ; Depositing a contact layer with a metal having excellent reactivity with hydrogen on the resultant, and forming the P-type gallium nitride compound (P- (Al) _x (In) _y (Ga) _{1- (x + y)} N) A P ⁺ -type gallium nitride compound (P ⁺ -(Al) _x (In) _y (Ga) _{1- (x + y)} N) semiconductor layer and a metal hydrogen compound layer (Metal-H) are formed between the contact layers. Doing; Forming a bonding pad layer on the resultant product with a metal having low reactivity with oxygen and capable of forming a stable compound with the contact layer; Performing a heat treatment to form a diffusion barrier layer between the contact layer and the bonding pad layer, wherein the diffusion barrier layer is a compound of the metal material provided on the contact layer and the metal material provided on the bonding pad layer. A method of forming an electrode structure of a p-type gallium nitride compound semiconductor. The method of claim 5, The method of forming an electrode structure of a P-type gallium nitride compound semiconductor, characterized in that the step of removing the natural oxide layer is carried out by BOE. The method of claim 5, Removing the natural oxide layer is a method of forming an electrode structure of a P-type gallium nitride compound semiconductor, characterized in that carried out by an etching solution containing F, Cl, S, OH. The method of claim 5, The bonding pad layer may be a single layer of Au (gold), Pd (palladium), Ru (rucenium), Ni (nickel), W (tungsten), Co (cobalt), Mo (molybdenum), Cu (copper), or It is a multilayer structure of two or more layers, The formation method of the electrode structure of P type gallium nitride compound semiconductor. The method of claim 5, The bonding pad layer may include one element of Au (gold), Pd (palladium), Ru (rucenium), Ni (nickel), W (tungsten), Co (cobalt), Mo (molybdenum), or Cu (copper). M 'is a single layer or two layers of MO (' M 'oxygen compound), M-Si (' M 'silicon compound), MN (' M 'nitrogen compound), MC (' M 'carbon compound) The formation method of the electrode structure of the p-type gallium nitride compound semiconductor characterized by the above multilayer structure. The method of claim 5, The contact layer is Pt (platinum), Ti (titanium), Pd (palladium), Ni (nickel), Ta (tantalum), W (tungsten), Al (aluminum), Cr (chromium), V (vanadium), Ir A method of forming an electrode structure of a P-type gallium nitride compound semiconductor, which is a single layer of (iridium), Hf (hafnium), Co (cobalt), or a multilayer structure of two or more layers. delete delete The method of claim 5, The gallium nitride of the P ⁺ type produced by the step of depositing the contact layer by performing the heat treatment _{^{(P + - (Al) x}} (In) y (Ga) 1- (x + y) N) A method for forming an electrode structure of a P-type gallium nitride compound semiconductor, characterized in that the depth of the semiconductor layer and the metal hydrogen compound layer (Metal-H) is further deepened.

Images