KR100543361B1 - Load lock chamber - Google Patents

Load lock chamber Download PDF

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Publication number
KR100543361B1
KR100543361B1 KR1019990032953A KR19990032953A KR100543361B1 KR 100543361 B1 KR100543361 B1 KR 100543361B1 KR 1019990032953 A KR1019990032953 A KR 1019990032953A KR 19990032953 A KR19990032953 A KR 19990032953A KR 100543361 B1 KR100543361 B1 KR 100543361B1
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South Korea
Prior art keywords
chamber
load lock
lock chamber
ring
cover
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KR1019990032953A
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Korean (ko)
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KR20010017441A (en
Inventor
김대식
이성호
홍영선
송유경
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삼성전자주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

챔버 본체 입구면에서 커버의 소정 부분과의 접촉을 방지하는 접촉방지 구조를 포함하는 로드록 챔버가 개시된다. 더욱 상세하게, 접촉방지 구조로는 챔버 본체 입구면에서 O-링의 내측부를 따라 소정의 깊이의 단차가 형성되거나, O-링의 외측부를 따라 소정의 두께의 스페이서판이 설치되는 구조를 포함하는 로드록 챔버가 제공된다.A loadlock chamber is disclosed that includes an anti-contact structure that prevents contact with a predetermined portion of a cover at the chamber body entrance face. More specifically, the contact preventing structure includes a rod having a structure having a predetermined depth along the inner portion of the O-ring at the inlet side of the chamber body, or a spacer plate having a predetermined thickness along the outer portion of the O-ring. A lock chamber is provided.

Description

로드록 챔버{Load lock chamber}Load lock chamber

도 1은 종래의 로드록 챔버를 개략적으로 도시한 구조도1 is a structural diagram schematically showing a conventional load lock chamber

도 2는 도 1에서의 접촉부분의 단면도2 is a cross-sectional view of the contact portion in FIG.

도 3은 본 발명에 따른 로드록 챔버에서의 접촉부분의 단면도 3 is a cross sectional view of a contact portion in a load lock chamber according to the present invention;

도 4는 본 발명에 따른 기존의 로드록 챔버에서의 접촉부분의 단면도 4 is a cross-sectional view of a contact portion in a conventional load lock chamber in accordance with the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 챔버 본체, 2 : 커버, 1: chamber body, 2: cover,

3 : 공정챔버, 4 : 진공펌프, 3: process chamber, 4: vacuum pump,

5 : 기판의 로딩/언로딩 장치, 5: loading / unloading device of substrate,

6 : 공정챔버와의 연결부,6: connection to the process chamber,

7 : 커버와 챔버 본체 입구면과의 접촉부,7: contact portion between cover and chamber body entrance face,

8 : O-링8: O-ring

10 : 로드록 챔버 내부10: inside the load lock chamber

11 : 진공펌핑시 커버가 움직이는 이동 갭, 11: moving gap in which the cover moves when vacuum pumping,

12 : 금속파티클 발생부분,12: metal particle generating part,

21 : 본 발명에 따른 챔버 본체 입구면에 형성된 단차,21: step formed in the chamber body inlet surface according to the present invention,

31 : 본 발명에 따른 기존의 챔버 본체 입구면에 설치된 스페이서판,31: spacer plate installed on the existing chamber body entrance surface according to the present invention,

본 발명은 반도체나 LCD 제조상에서 건식 에칭공정, 기상증착공정, 스퍼터링공정이 실시되는 각각의 공정챔버와 연결되어, 상기 공정챔버의 진공상태를 유지한 상태에서 공정챔버에 기판을 로딩/언로딩시키는 로드록 챔버에 관한 것으로, 진공펌핑시 챔버 내부로 유입되는 금속파티클이 발생되지 않는 구조의 로드록 챔버에 관한 것이다.The present invention is connected to each process chamber in which dry etching process, vapor deposition process, sputtering process is performed in semiconductor or LCD manufacturing, and load / unload a substrate into the process chamber while maintaining the vacuum state of the process chamber. The present invention relates to a load lock chamber, in which a metal particle introduced into the chamber during vacuum pumping is not generated.

로드록 챔버 장치는 도 1을 참조하면, 챔버 본체와 커버, 공정챔버와 연결되는 연결부, 기판을 로딩하거나 언로딩하는 로딩/언로딩장치, 진공상태를 일으키는 진공펌프 장치로 구성된다.Referring to FIG. 1, the load lock chamber device includes a chamber body and a cover, a connection part connected to a process chamber, a loading / unloading device for loading or unloading a substrate, and a vacuum pump device for generating a vacuum state.

로드록 챔버는 기판을 로딩하여 공정을 수행하고 언로딩할 때까지 진공상태를 유지하며, 기판을 이송받거나 반송시킬 때는 대기압상태를 유지하므로 진공상태와 대기압상태가 반복된다. 따라서, 상기 로드록 챔버의 커버는 진공펌핑시에는 폐쇄되고, 벤팅시에는 개방된다. The load lock chamber maintains a vacuum state until the substrate is loaded to perform a process and unloaded, and the atmospheric pressure state is repeated when the substrate is transferred or conveyed, and thus the vacuum state and the atmospheric pressure state are repeated. Thus, the cover of the load lock chamber is closed during vacuum pumping and open when venting.

그런데, 진공펌핑시 로드록 챔버의 커버와 챔버 본체 입구면이 접촉함에 따라 진동이 발생하면서 마찰을 일으키기 때문에, 커버와 챔버 본체 입구면의 O-링의 내측부에서 상기 로드록 챔버 내부로 유입되는 금속파티클이 발생한다는 문제점이 있다. 로드록 챔버 내부로 유입된 금속파티클은 공정챔버(3) 내부로 유입되어 기판상에 내려않아, 공정챔버에서 작업을 위해 방사되는 고주파 또는 금속원자가 기판 표면에 도달하는 것을 방해함으로써 반도체나 LCD의 수율과 품질을 저하시키며, 설비를 손상시킨다는 문제점이 있다.However, since the vibration occurs when the cover of the load lock chamber and the chamber main body inlet contact with each other during vacuum pumping, the metal flows into the load lock chamber from the inner side of the O-ring of the cover and the chamber main body. There is a problem that particles occur. The metal particles introduced into the load lock chamber are introduced into the process chamber 3 and are not lowered on the substrate, thereby preventing the high frequency or metal atoms radiated for work in the process chamber from reaching the substrate surface. There is a problem that deteriorates the quality and damages the equipment.

이 문제를 해결하기 위한 종래기술은 로드록 챔버의 커버(2)와 챔버 본체(1) 입구면과의 접촉면을 불소고무나 실리콘고무 등으로 형성하거나, 챔버 본체(1) 입구면의 안쪽 모서리를 따라 커버와의 접촉선을 차단하는 형상으로 O-링을 형성하는 것이다. The prior art for solving this problem is to form a contact surface between the cover 2 of the load lock chamber and the inlet surface of the chamber body 1, such as fluorine rubber or silicone rubber, Accordingly, the O-ring is formed in a shape to block the contact line with the cover.

그러나, 커버(2)와 챔버 본체(1) 입구면과의 접촉면을 불소고무나 실리콘고무 등으로 형성하는 것은 고무파티클이 발생된다는 문제점이 있고, 챔버 본체(1) 입구면의 안족 모서리를 따라 O-링을 형성하는 것은, O-링의 연결부의 내구성이 부족하여 진공상태에서 탈락하기 쉽다는 문제점이 있다. However, forming a contact surface between the cover 2 and the inlet surface of the chamber main body 1 with fluorine rubber or silicone rubber has a problem that rubber particles are generated. Forming the ring has a problem in that it is easy to drop out in vacuum due to lack of durability of the connection portion of the O-ring.

따라서, 상기 공정이나 설비에 영향을 미치지 않고 챔버 내부로 파티클이 유입되지 않는 구조의 로드록챔버가 요구된다.Therefore, there is a need for a load lock chamber having a structure in which particles do not flow into the chamber without affecting the process or equipment.

본 발명의 목적은 챔버 내부로 금속파티클이 유입되지 않는 구조를 포함하는 로드록 챔버를 제공함으로써, 반도체 또는 LCD 제조공정에서 수율과 품질을 향상시키고 설비의 손상을 방지하는데 있다.An object of the present invention is to provide a load lock chamber including a structure in which metal particles do not flow into the chamber, thereby improving yield and quality in a semiconductor or LCD manufacturing process and preventing damage to equipment.

상기 목적을 달성하기 위하여, 본 발명에서는, 챔버 커버와 챔버 본체 입구면의 소정 부분이 접촉을 일으키지 않는 접촉방지 구조를 포함하는 로드록 챔버가 제공된다.In order to achieve the above object, in the present invention, there is provided a load lock chamber including a contact preventing structure in which a predetermined portion of the chamber cover and the chamber body inlet surface does not cause contact.

일실시예에서 접촉방지 구조로 챔버 본체 입구면의 O-링의 내측부에 소정의 깊이를 가진 단차가 형성된다. In one embodiment, a step having a predetermined depth is formed on an inner side of the O-ring of the chamber body entrance face with a contact preventing structure.

이하 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 3을 참조하면, 로드록 챔버의 본체(1) 입구면에서 있는 O-링(8)을 기준으로, 그 내측부에 소정의 깊이를 지닌 단차를 형성함으로써, 커버(2)와 챔버 본체(1) 입구면 O-링(8)의 내측부와의 접촉을 차단시켜 마찰을 방지하는 것이다. 커버(2)와 챔버 본체(1) 입구면의 O-링(8)의 외측부와의 접촉으로 발생되는 금속파티클은 O-링(8)에 의하여 차단되어, 챔버 내부로 유입되지 않는다. Referring to FIG. 3, the cover 2 and the chamber body 1 are formed by forming a step having a predetermined depth inside the O-ring 8 at the entrance face of the body 1 of the load lock chamber. ) To prevent friction by blocking contact with the inner side of the inlet O-ring (8). The metal particles generated by the contact of the cover 2 with the outer portion of the O-ring 8 on the entrance face of the chamber body 1 are blocked by the O-ring 8 and do not flow into the chamber.

바람직하게 단차의 깊이는 0.1 ∼ 0.4mm로 하며, 깊이가 0.1mm 미만이면 진공펌핑시 커버(2)와 단차의 밑면이 접촉되어 금속파티클이 발생되고, 0.4mm를 초과하는 경우에는 O-링(8)이 홈에서 이탈되기 쉽다.Preferably, the depth of the step is 0.1 to 0.4 mm, and if the depth is less than 0.1 mm, metal particles are generated by contacting the cover 2 and the bottom of the step during vacuum pumping. 8) It is easy to get out of this groove.

또 다른 실시예로, 도 4에서 참조하면, 챔버 본체(1) 입구면에 접촉방지 구조가 형성되어 있지 않은 기존의 로드록 챔버의 경우에는, 챔버 본체(1) 입구면에서 O-링(8)의 외측부에 스페이서판(31)을 설치하여 커버(2)와 챔버 본체(1) 입구면의 O-링(8)의 내측부와의 접촉을 방지함으로써 O-링(8)의 내측부에 단차를 형성한 것과 동일한 효과를 나타내게 한다. 커버와 스페이서판(31)과의 접촉으로 발생되는 금속파티클은 O-링(8)에 의하여 차단되어, 챔버 내부로 유입되지 않는다. In another embodiment, referring to FIG. 4, in the case of a conventional load lock chamber in which the contact preventing structure is not formed at the inlet face of the chamber body 1, the O-ring 8 at the inlet face of the chamber body 1 is provided. The spacer plate 31 is provided on the outer side of the c) to prevent contact between the cover 2 and the inner part of the O-ring 8 on the inlet surface of the chamber body 1, thereby providing a step on the inner side of the O-ring 8. Have the same effect as the one formed. The metal particles generated by the contact between the cover and the spacer plate 31 are blocked by the O-ring 8 and do not flow into the chamber.

바람직하게 스페이서판(31)의 두께는 0.1 ∼ 0.3mm로 하며, 두께가 0.1mm 미만이면 진공펌핑시 커버(2)와 챔버 입구면의 O-링의 내측면이 접촉되어 금속파티클 이 발생되고, 0.3mm를 초과하는 경우에는 O-링의 효과가 저하되어 O-링 외측부에서 발생되는 금속파티클이 챔버내로 유입되기 쉽다.Preferably, the thickness of the spacer plate 31 is 0.1 to 0.3 mm. If the thickness is less than 0.1 mm, metal particles are generated by contacting the inner surface of the O-ring on the cover 2 and the chamber inlet surface during vacuum pumping. If the thickness exceeds 0.3 mm, the effect of the O-ring is reduced, and metal particles generated at the outer portion of the O-ring are easily introduced into the chamber.

상기와 같이, 본 발명에 따르면, 금속파티클이 로드록 챔버 내부로 전혀 유입되지 않기 때문에, 반도체 또는 LCD 제조상에서의 수율과 품질을 향상되고 제조설비의 손상을 방지한다. As described above, according to the present invention, since the metal particles do not flow into the load lock chamber at all, the yield and quality in semiconductor or LCD manufacturing are improved, and damage to the manufacturing equipment is prevented.

Claims (5)

챔버 본체와 커버와 기판의 로딩/언로딩장치로 구성되고 공정챔버, 진공장치와 연결되는 로드록 챔버에 있어서, A load lock chamber comprising a chamber body, a cover, and a loading / unloading device of a substrate and connected to a process chamber and a vacuum device, 상기 챔버 본체 입구면에 커버와의 접촉방지 구조가 형성되는 것을 특징으로 하는 로드록 챔버.The load lock chamber, characterized in that the contact preventing structure with the cover is formed on the chamber body inlet surface. 제 1항에 있어서, 상기 접촉방지 구조는 입구면의 O-링의 내측부에 소정의 깊이로 형성된 단차인 것을 특징으로 하는 로드록 챔버.The load lock chamber according to claim 1, wherein the contact preventing structure has a step formed at a predetermined depth on an inner side of the O-ring of the inlet surface. 제 2항에 있어서, 상기 단차는 0.1 ∼ 0.4mm의 깊이로 형성된 것을 특징으로 하는 로드록 챔버.The load lock chamber of claim 2, wherein the step is formed to a depth of 0.1 to 0.4 mm. 제 1항에 있어서, 접촉방지 구조가 형성되지 않은 기존의 로드록 챔버에 있어서, 상기 접촉방지 구조는 챔버 본체 입구면의 O-링의 외측부에 설치된 소정의 두께의 스페이서판인 것을 특징으로 하는 로드록 챔버.2. A rod according to claim 1, wherein in the existing load lock chamber in which the contact preventing structure is not formed, the contact preventing structure is a spacer plate having a predetermined thickness provided at an outer side of the O-ring on the chamber body entrance face. Lock chamber. 제 4항에 있어서, 상기 스페이서판은 0.1 ∼ 0.3mm의 높이로 형성된 것을 특징으로 하는 로드록 챔버.The load lock chamber according to claim 4, wherein the spacer plate is formed at a height of 0.1 to 0.3 mm.
KR1019990032953A 1999-08-11 1999-08-11 Load lock chamber KR100543361B1 (en)

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KR100543361B1 true KR100543361B1 (en) 2006-01-20

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US11367635B2 (en) 2017-09-27 2022-06-21 Semes Co., Ltd. Apparatus and method for treating substrate

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US8608856B2 (en) 2005-09-30 2013-12-17 Tokyo Electron Limited Sealing part and substrate processing apparatus
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
US11367635B2 (en) 2017-09-27 2022-06-21 Semes Co., Ltd. Apparatus and method for treating substrate

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