KR100526472B1 - Method for detecting a defect of a semiconductor chip and tool for processing a scan data of the semiconductor chip - Google Patents

Abstract

The present invention relates to a method for measuring a defect state of a semiconductor chip and a semiconductor chip scan data calculation processing tool. In the present invention, the disadvantages of the optical image scanning method and the laser scanning method are eliminated, and only the advantages thereof are selectively taken into consideration. After selecting one reference unit chip among the semiconductor chips, a series of optical image scanning procedures and laser scanning procedures are selectively performed on the reference unit chips, and a series of scan data is generated for each cell of the reference unit chip. Acquiring and calculating this scan data to calculate a series of reference laser reflection intensity values "," a series of laser scan procedures are performed for each semiconductor chip disposed in a certain wafer, A process of acquiring a series of cell laser reflection intensity values for each cell of each chip in a wafer "," each chip in each wafer The process of determining whether a defect is present in each cell of each semiconductor chip by comparing the similarity between the reference laser reflection intensity value of each cell and the reference laser reflection intensity value of each cell of the reference unit chip is performed in time series. Through this, even in a situation where the semiconductor chip is miniaturized and highly integrated, defects existing in each semiconductor chip can be induced to be accurately detected in a short time.

According to the implementation of the present invention, when the detection reliability of defects existing in each semiconductor chip is improved, the manager can easily check and manage the number of defects existing in the semiconductor chip without any difficulty. The finished semiconductor chip can normally maintain a certain level or more of quality.

Description

Method for detecting a defect of a semiconductor chip and tool for processing a scan data of the semiconductor chip}

The present invention relates to a method for measuring a defect state of a semiconductor chip, and more particularly, to improve the detection reliability of defects existing in each semiconductor chip, whereby the number of defects existing in the semiconductor chip can be easily managed by an administrator. The present invention relates to a method for measuring a defect state of a semiconductor chip, which can be guided so that the finished semiconductor chip can be normally maintained at a certain level or higher by being guided to check and manage. Furthermore, the present invention relates to a semiconductor chip scan data calculation processing tool employed in such a defect state measuring method of a semiconductor chip.

In general, since a semiconductor chip is generally manufactured through a very complicated process procedure, various kinds of defects are inevitably formed in the finally completed semiconductor chip, and these various defects are excessive in the semiconductor chip without any action. If left unattended, in the aftermath, the semiconductor chip will have many problems in performing its functions.

Conventionally, in view of such a problem in advance, a system system capable of precisely measuring and measuring a defect state of a semiconductor chip is provided, whereby the number of defects in the semiconductor chip introduced into the process is precisely determined by the manager at every arbitrary process step. By making it possible to check and manage, the method of inducing the minimization of the functional degradation of the semiconductor chip due to the aftermath of the defect is devised.

For example, as shown in FIG. 1, in the related art, a system system consisting of a stage 3, a laser irradiator 4, a laser controller 5, a monitor 6, and the like is constructed. Through the process of precisely inspecting the wafer 1 in which any semiconductor process is completed, the defects of the semiconductor chips 2 belonging to the wafer 1 can be precisely checked and managed. The method of inducing the functional degradation of the individual semiconductor chips 2 to be suppressed to a minimum is devised.

In this case, the laser irradiator 4 irradiates a laser of a certain intensity to the wafer 1 side and receives the reflected laser light reflected from the wafer 4 side, so that each semiconductor chip 2 in the wafer 1 is provided. In this connection, the laser controller 5 receives the reflected laser light from the laser irradiator 4, calculates the reflection intensity value of the reflected laser light, and calculates the calculated laser reflection intensity. For example, the value is graphically processed in the form of a wafer map to output through the monitor 6.

At this time, the laser light reflected from the defective area in which the defect remains and the laser light reflected from the excellent area in which the defect does not exist are significantly different from each other. Therefore, the manager side observing the monitor 6 remains on the semiconductor chip. The number of defects to be checked can be precisely checked and managed.

As another example, as shown in FIG. 2, in the related art, a series of system systems including, for example, the stage 3, the imager 7, the imager controller 8, the monitor 6, and the like are constructed. Through this system, a process of precisely inspecting the wafer 1 in which an arbitrary semiconductor process is completed is performed so that defects of the semiconductor chips 2 belonging to the wafer 1 can be precisely checked and managed. As a result, a method of inducing a deterioration of the individual semiconductor chips 2 due to defects can be minimized.

In this case, the image pickup device 7 performs a procedure of scanning the entire semiconductor chips 2 in the wafer 1 in a manner of precisely capturing a detailed image of the wafer 1, and in connection with this, the image The imager controller 8 receives the detailed image of the wafer 1 from the image imager 7, and then calculates an optical image value of the detailed image, and calculates the calculated optical image value. The graphic processing in the form of a wafer map is performed to output through the monitor 6.

At this time, since the optical image of the defective area where the defects exist and the excellent area where the defects do not exist are significantly different, the manager who observes the monitor 6 can check and manage the number of defects existing in the semiconductor chip precisely. It becomes possible.

Under the semiconductor chip defect management system according to the related art, for example, the laser scan method, as described above, the manager side "reflects from the laser light reflected from the defective area where the defect exists and the excellent region where the defect does not exist. Based on the fact that the reflected light value is significantly different ", the number of defects existing in the semiconductor chip 2 can be checked and managed precisely.

However, in recent years, with the rapid development of miniaturization technology, high integration technology, and the like of the semiconductor chip 2, the "normal semiconductor pattern" and the "bad defect" have very similar characteristics, for example, reflectance, irregularities, and the like. In the aftermath, the laser light reflected from the defective areas where the defects exist and the laser light reflected from the excellent areas where the defects do not exhibit almost the same level of reflection intensity, and as a result, the manager using the laser scanning method. Despite the fact that the laser scan procedure has been normally performed, the present inventors have experienced many difficulties in accurately checking and managing the number of defects existing in the semiconductor chip 2.

Of course, if the number of defects existing in the semiconductor chip 2 cannot be precisely checked and managed due to this difficulty, in the aftermath, the manager has no choice but to leave the functional degradation of the semiconductor chip 2 due to the defect. There will be no.

Compared to the laser scanning method described above, in the optical image scanning method, in the semiconductor chip 2, on the basis of the fact that the defective area in which the defect exists and the superior area in which the defect does not exist are significantly different from each other. Since the number of existing defects is checked and managed, even if the semiconductor chip 2 is miniaturized and highly integrated, it provides an advantage that it is hardly affected by it.

However, such an optical image scanning method basically takes a mechanism of precisely capturing a detailed image of the wafer 1 for a long time, and thus inevitably has a fatal disadvantage that the overall process time is excessively consumed. As a result, the manager side, despite the excellent advantage that "is hardly affected by the miniaturization, high integration, etc. of the semiconductor chip 2", there is a lot of difficulties in adopting and operating the optical image scanning method.

Accordingly, an object of the present invention is to discard the disadvantages of the optical image scanning method and the laser scanning method, and selectively take only the advantages, and select one reference unit chip from among the semiconductor chips disposed in any wafer, and then the reference unit By selectively conducting a series of optical image scanning procedures and laser scanning procedures for a chip, a series of scan data is acquired for each cell of a reference unit chip, and the scan data is calculated to calculate a series of reference laser reflection intensity values. Calculation process "," Full series of laser scanning procedures for each semiconductor chip disposed in any wafer to obtain a series of cell laser reflection intensity values for each cell of each chip in the wafer Process "," differentiation of cell laser reflection intensity value of each cell of each chip in wafer and reference laser reflection intensity value of each cell of reference unit chip. By comparing the degree, the process of determining whether or not a defect exists in each cell of each semiconductor chip is performed in a time series, whereby the semiconductor chip remains in each semiconductor chip even under the situation where the semiconductor chip is miniaturized and highly integrated. It is to induce defects to be precisely detected in a short time.

Another object of the present invention is to improve the detection reliability of defects existing in each semiconductor chip, thereby inducing the number of defects existing in the semiconductor chip to be easily checked and managed by an administrator, thereby finally completing the semiconductor chip. This is to maintain the above normal quality.

Still other objects of the present invention will become more apparent from the following detailed description and the accompanying drawings.

In order to achieve the above object, in the present invention, a predetermined reference unit chip is selected from an arbitrary wafer on which each semiconductor chip is disposed, and then an optical image of the selected reference unit chip is selected and scanned to select each of the reference unit chips. Computing an optical image value corresponding to a cell, and selectively laser scanning the corresponding reference unit chip to calculate a unit laser reflection intensity value corresponding to each cell of the reference unit chip. Calculating and calculating a series of reference laser reflection intensity values corresponding to each cell of the reference unit chip by integrating and calculating the unit laser reflection intensity values, and scanning all the semiconductor chips disposed in the wafer, Calculating a cell laser reflection intensity value corresponding to, and comparing the similarities between the cell laser reflection intensity value and the reference laser reflection intensity value. In comparison, a method for measuring a defect state of a semiconductor chip comprising a combination of steps of determining whether a defect exists in each cell of each semiconductor chip and outputting the determination result externally is disclosed.

Hereinafter, a method for measuring a defect state of a semiconductor chip and a semiconductor chip scan data operation processing tool according to the present invention will be described in detail with reference to the accompanying drawings.

As shown in FIG. 3, first, in order for a series of semiconductor chip defect state measurement processes according to the present invention to be normally implemented, an optical image scan system 15, a laser scan system 16, a semiconductor chip scan data calculation processing tool ( A series of device systems consisting of 100) must be established in advance. In this case, the semiconductor chip scan data calculation processing tool 100 receives various types of scan data output from the optical image scan system 15, the laser scan system 16, and the like in real time, and processes the scan data. , The graphics are processed in a wafer map form, a table form, and the like, and are output through the monitor 6 so that the number of defects existing in the semiconductor chip C can be precisely checked and managed by the manager who observes the monitor 6. To induce it.

At this time, the imager controller 12 belonging to the optical image scanning system 15 may be connected to the imager 11, and may be an arbitrary wafer on which the semiconductor chips C are disposed, for example, a wafer requiring observation. After selecting one reference unit chip SC from the TW, an optical image of the selected reference unit chip SC is selected and scanned, and an optical image corresponding to each cell SS of the reference unit chip SC is selected. Calculates a value and inputs the calculated optical image value to the semiconductor chip scan data operation processing tool 100.

In addition, the laser controller 14 included in the laser scanning system 16 selects one reference unit chip SC from any wafer TW for which observation is required, and then selectively selects the selected reference unit chip SC. Laser scanning to calculate the unit laser reflection intensity value corresponding to each cell SS of the reference unit chip SC, and input the calculated unit laser reflection intensity value to the semiconductor chip scan data calculation processing tool 100 side. In addition to performing a role, as shown in FIG. 10 to be described later, the entire semiconductor chips C1, C2, and Cn disposed in the wafer TW for which observation is required are subjected to a full scan, so that each semiconductor chip C1, C2, The cell laser reflection intensity value corresponding to each cell S1, S2, S3 of Cn) is calculated, and the calculated cell laser reflection intensity value is input to the semiconductor chip scan data calculation processing tool 100.

Here, as shown in FIG. 4, the semiconductor chip scan data calculation processing tool 100 constituting an aspect of the present invention is largely comprised of a scan data calculation processing control unit 101, an optical image value conversion unit 102, and a reference laser. The reflection intensity value calculation unit 104, the defect laser reflection intensity value calculation unit 106, and the scan data storage / management unit 108 are combined.

In this case, the scan data calculation processing control unit 101 may selectively operate with the laser controller 14 and the image pickup controller 12 through the laser reflection intensity value receiving unit 110 and the optical image value receiving unit 111. In a signal-connected state, after receiving various types of scan data (for example, an optical image value, a unit laser reflection intensity value, and a cell laser reflection intensity value) input from the laser controller 14 and the image pickup controller 12 in real time, they are received. It manages and controls the storage, operation, and output procedures of the completed various scan data.

In this case, the laser reflection intensity value receiving unit 110 collects various types of scan data output from the laser controller 14, and deforms them into a form that the scan data calculation processing control unit 101 can easily process, and deforms. It transmits the completed scan data to the scan data calculation processing control unit 101 side, the optical image value receiving unit 111 collects the various scan data output from the image pickup controller 12, and scans them The data operation processing control unit 101 transforms the data into a form that is easy to process, and transmits the modified scan data to the scan data operation processing control unit 101.

In this situation, the optical image value converting unit 102, which is computationally controlled by the scan data processing processing control unit 101, corresponds to the optics corresponding to each cell SS of the reference unit chip SC from the image pickup controller 12. When an image value is input and the value is transferred from the scan data operation processing control unit 101 side, a series of conversion routines are performed based on a predetermined conversion library source stored in the conversion library storage unit 103. In this case, the optical image value corresponding to each cell SS of the reference unit chip SC is converted into a converted laser reflection intensity value corresponding to each cell SS of the reference unit chip SC. In this case, the conversion library storage 103 that communicates with the optical image value conversion unit 102 is, for example, " a conversion library table required for the information conversion routine, a formula string source required for the information conversion routine, an instruction set required for the information conversion routine. , A pattern source required for an information conversion routine ”, and the like, to assist the optical image value conversion unit 102 to smoothly perform a series of information conversion procedures without any problems.

Also, the reference laser reflection intensity value calculator 104 computed and controlled by the scan data calculation processing controller 101 is calculated by the " optical image value converter 102 " When the converted laser reflection intensity value is transmitted, and the "unit laser reflection intensity value input by the laser controller 14" is transferred, based on predetermined calculation sources stored in the calculation source storage 105 As a result, a series of reference laser reflection intensity value calculation routines, for example, an averaging routine are performed to calculate a series of reference laser reflection intensity values in which the corresponding optical image value and the unit laser reflection intensity value are integrally reflected. In this case, the calculation source storage unit 105 includes, for example, various types of "a formula string source required for the averaging routine of individual values, an instruction set required for the averaging routine of individual values, a pattern source required for the averaging routine of individual values", and the like. Thus, a series of information averaging procedures by the reference laser reflection intensity value calculator 104 can be smoothly performed without any problems.

In addition, the defect existence determining unit 106, which is computationally controlled by the scan data calculation processing control unit 101, controls each of the semiconductor chips C1, C2, Cn disposed in the wafer TW from the previous laser controller 14. When the cell laser reflection intensity values corresponding to the cells S1, S2, and S3 are input, and the corresponding values are transmitted from the scan data calculation processing control unit 101, based on the sources stored in the determination source storage unit 107, A series of arithmetic routines are performed to, for example, compare the degree of similarity between the cell laser reflection intensity value and the reference laser reflection intensity value one-to-one, respectively, and according to the result, each cell of each semiconductor chip C1, C2, Cn ( After determining whether a defect exists in S1, S2, S3), a series of defect existence determination data reflecting the determination result is generated. In this case, the determination source storage unit 107 may be, for example, "a formula string source required for comparison / determination of individual values, an instruction set for comparison / determination of individual values, and a pattern source for comparison / determination of individual values. And the like, so that a series of information calculation procedures performed by the defect existence determining unit 106 can be smoothly performed without any problems.

On the other hand, as shown in the figure, the semiconductor chip scan data calculation processing tool 100 according to the present invention, in addition to the above-mentioned components, the operation data storage unit 109, the interface unit 112, etc. are additionally disposed do.

In this case, the operation data storage unit 109 may be, for example, “the base program data for supporting the base operation of the scan data operation processing control unit 101 and the scan data operation processing result in a table form (or wafer map form). Graphics processing program data "and the like, and serves to assist a series of scan data calculation processing procedures by the scan data calculation processing control unit 101 to proceed smoothly without any problems.

In addition, the interface unit 112 monitors the data output from the scan data calculation processing control unit 101 in a state where the scan data calculation processing control unit 101 and the monitor 6 are intermediated. After changing to, the changed data is transferred to the monitor 6 side, so that the number of defects existing in the semiconductor chips C1, C2, Cn can be precisely checked and managed on the manager side observing the monitor 6, for example. You can induce it to do so.

Hereinafter, the procedure for measuring a semiconductor chip defect state inherent to the present invention using the system system having the above-described configuration will be described in detail.

As shown in FIG. 5, first, in the present invention, a predetermined reference unit chip SC is selected from an arbitrary wafer TW on which the semiconductor chips C are disposed, and then, the selected reference unit chip SC is selected. The optical image is selected and scanned to calculate an optical image value corresponding to each cell SS of the reference unit chip SC, and by the above procedure, each cell of the reference unit chip SC ( When the optical image value corresponding to SS is calculated, the optical image value corresponding to each cell SS of the reference unit chip SC is determined by the predetermined conversion library for each cell SS of the reference unit chip SC. And converts and calculates the converted laser reflection intensity value corresponding to step S1 and S2. In this case, the previous reference unit chip SC may be a semiconductor chip that can represent a specific portion of the wafer TW, for example, a semiconductor chip located at a center portion or a bottom portion, depending on circumstances. The semiconductor chip located, the semiconductor chip located at the left part, the semiconductor chip located at the right part, the semiconductor chip located at the top part, etc. may be elastically selected.

Within this procedure, the imager controller 12 selects and scans an optical image of the reference unit chip SC, in association with the imager 11, so that each cell SS of the reference unit chip SC is scanned. The optical image values corresponding to the data are calculated in the form of a table T1 as shown in FIG. 6, and the calculated optical image values are input and stored to the semiconductor chip scan data calculation processing tool 100.

In this case, the image pickup device 11 does not image scan all the semiconductor chips C disposed in the wafer TW, but merely image scans one reference unit chip SC selected from the wafer TW. Therefore, even if the imager 11 takes the "mechanism of precisely photographing the detailed image of the wafer 1 for a long time", it takes only a very short time for the imaging procedure to be completed, and eventually, the present invention Under the system, the image pickup device 11 will not cause any fatal problems, for example, in which the overall processing time is excessively consumed more than necessary.

In the foregoing procedure, the optical image value converter 102 inputs an optical image value corresponding to each cell SS of the reference unit chip SC as shown in FIG. 6 from the image imager controller 12. When the value is transferred from the scan data operation processing control unit 101 side, as shown in FIG. 7, a predetermined conversion library source stored in the conversion library storage unit 103, for example, a conversion library table. Based on T3, a series of conversion routines are performed, and the optical image values corresponding to the respective cells SS of the reference unit chip SC have a shape of, for example, a table T4. A process of converting and calculating the converted laser reflection intensity value corresponding to the cell SS is performed.

On the other hand, in a situation where a series of converted laser reflection intensity values have been calculated through the foregoing procedure, in the present invention, the reference unit chip SC is selectively laser-scanned to each cell SS of the reference unit chip SC. A procedure of calculating the corresponding unit laser reflection intensity value is performed (steps S3 and S4).

Within this procedure, the laser controller 14 selectively laser scans the reference unit chip SC to display unit laser reflection intensity values corresponding to each cell SS of the reference unit chip SC. The process of calculating and storing in the form of table T5 as described above and inputting and storing the calculated unit laser reflection intensity value to the semiconductor chip scan data calculation processing tool 100 side is performed.

Through the above procedure, when the unit laser reflection intensity value corresponding to each cell SS of the reference unit chip SC is secured, in the present invention, the converted laser reflection intensity value and the unit laser reflection intensity value are immediately averaged. The integration and computation are performed to calculate a series of reference laser reflection intensity values corresponding to each cell SS of the reference unit chip SC (steps S5 and S6).

Within this procedure, the reference laser reflection intensity value calculation unit 104 generates a series of reference laser reflection intensity value calculation routines, for example, an averaging routine, based on predetermined calculation sources stored in the calculation source storage unit 105. Proceeding, a process of calculating a series of reference laser reflection intensity values in which the corresponding converted laser reflection intensity value and the unit laser reflection intensity value are integrally reflected in the form of table T6 as shown in FIG. 9 is performed.

At this time, the final laser reflection intensity value obtained through the above procedure is calculated by averaging the optical image value and the unit laser reflection intensity value, and reflects the advantages of the image scanning process and the advantages of the laser scanning process. Therefore, it has a very high reliability that can be used as reference data during the defect existence determination process described later.

On the other hand, if a series of reference laser reflection intensity values are secured through the above procedure, the present invention immediately immediately scans the entire semiconductor chips C1, C2, and Cn disposed in the wafer TW, thereby providing each semiconductor chip. The procedure for calculating the cell laser reflection intensity values corresponding to the cells S1, S2, S3 of (C1, C2, Cn) is performed (step S7).

Within this procedure, the laser controller 14 performs a full scan of the entire semiconductor chips C1, C2, Cn disposed in the wafer TW where observation is required, as shown in FIG. The cell laser reflection intensity values corresponding to the cells S1, S2, S3 of, C2, Cn are calculated in the form of, for example, tables T7, T8, T9 as shown in FIG. The process of inputting and storing the reflection intensity value to the semiconductor chip scan data operation processing tool 100 is performed.

When the cell laser reflection intensity values corresponding to the cells S1, S2, and S3 of each semiconductor chip C1, C2, and Cn are secured through the above-described procedure, in the present invention, the previous cell laser reflection intensity values and reference A similarity degree of the laser reflection intensity values is compared to determine whether a defect exists in each of the cells S1, S2, S3 of each of the semiconductor chips C1, C2, and Cn (step S8).

Within this procedure, the defect presence determining unit 106 performs a series of calculation routines based on the source stored in the determining source storage unit 107, for example, the cell laser reflection intensity value and the reference laser reflection intensity value. As shown in FIG. 12, the degree of similarity of each is compared one-to-one, and according to the result, whether or not a defect exists in each cell S1, S2, S3 of each semiconductor chip C1, C2, Cn is determined. After the determination, a process of generating a series of defect existence determination data reflecting the determination result is performed.

In this case, for example, among the cells S1, S2, and S3 belonging to the specific semiconductor chip C1, the cell laser reflection intensity value of the specific cells corresponds to the reference of the specific cells SS of the reference unit chip SC. If the laser reflection intensity value is similar within a predetermined range, the defect existence determining unit 106 determines that there are no defects in the corresponding cells, and reflects the determination result in the generation of the defect existence determination data.

However, among the cells S1, S2, and S3 belonging to the specific semiconductor chip C1, the cell laser reflection intensity value of the specific cells corresponds to the reference laser reflection of the specific cells SS of the reference unit chip SC. If it is out of a certain range from the intensity value and is different, the defect existence determination unit 106 determines that a defect exists in the corresponding cells, and reflects the determination result in the generation of the defect existence determination data.

Subsequently, the scan data calculation processing control unit 101 performs graphic processing on the defect existence determination data obtained through the above-described process, and then outputs the result in a table F form as shown in FIG. 13 through the monitor 6. The manager who observes the monitor 6 is guided so that the number of defects existing in the semiconductor chip C can be checked and managed precisely.

Meanwhile, the present invention described above may not only be utilized for production wafers, but may also be widely used for wafers of other uses having semiconductor chips.

For example, the present invention can be widely used for non-pattern wafers for monitoring, thereby providing a useful advantage for managing the number of combinations of managers.

As described in detail above, in the present invention, the disadvantages of the optical image scanning method and the laser scanning method are discarded, and only the advantages are selectively taken, and after selecting one reference unit chip among the semiconductor chips disposed in the arbitrary wafer, A series of optical image scanning procedures and a laser scanning procedure are selectively performed on the reference unit chip to acquire a series of scan data for each cell of the reference unit chip, and calculate the scan data to reflect a series of reference laser reflections. Process of calculating the intensity value "," a series of laser scan procedures are performed for each semiconductor chip disposed in a certain wafer, and a series of cell laser reflection intensity values for each cell of each chip in the wafer The process of acquiring "", the cell laser reflection intensity value of each cell of each chip in the wafer and the reference of each cell of the reference unit chip. The process of determining whether defects exist in each cell of each semiconductor chip by comparing the degree of similarity of the value of the reflected reflection intensity is performed in a time series, so that even in a situation where the semiconductor chip is miniaturized and highly integrated Therefore, defects existing in each semiconductor chip can be induced to be accurately detected in a short time.

According to the implementation of the present invention, when the detection reliability of defects existing in each semiconductor chip is improved, the manager can easily check and manage the number of defects existing in the semiconductor chip without any difficulty. The finished semiconductor chip can normally maintain a certain level or more of quality.

While specific embodiments of the invention have been described and illustrated above, it will be apparent that the invention may be embodied in various modifications by those skilled in the art.

Such modified embodiments should not be understood individually from the technical spirit or viewpoint of the present invention, and such modified embodiments should fall within the scope of the appended claims of the present invention.

1 and 2 is an exemplary diagram conceptually showing a defect state measuring system of a semiconductor chip according to the prior art.

3 and 10 conceptually illustrate a defect state measuring system of a semiconductor chip according to the present invention;

4 is an exemplary diagram conceptually showing a semiconductor chip scan data calculation processing tool according to the present invention;

5 is a process flowchart sequentially showing a method for measuring a defect state of a semiconductor chip according to the present invention;

6 is an exemplary diagram conceptually illustrating a storage form of an optical image value calculated according to an embodiment of the present invention.

7 is an exemplary diagram conceptually illustrating a process of converting an optical image value calculated according to an embodiment of the present invention.

8 is an exemplary diagram conceptually showing a storage form of a unit laser reflection intensity value calculated according to an embodiment of the present invention.

9 is an exemplary diagram conceptually showing a storage form of a reference laser reflection intensity value calculated according to an embodiment of the present invention.

11 is an exemplary diagram conceptually showing a storage form of a cell laser reflection intensity value calculated according to an embodiment of the present invention.

12 is an exemplary diagram conceptually illustrating a similarity comparison process between a cell laser reflection intensity value and a reference laser reflection intensity value according to an embodiment of the present invention.

FIG. 13 is an exemplary diagram conceptually showing a defect state table for each cell of each semiconductor chip in a wafer displayed on a monitor according to an embodiment of the present invention. FIG.

Claims (6)

After selecting a predetermined reference unit chip from an arbitrary wafer on which the semiconductor chips are disposed, an optical image of the selected reference unit chip is selected and scanned to obtain an optical image value corresponding to each cell of the reference unit chip. Calculating a unit laser reflection intensity value corresponding to each cell of the reference unit chip by selectively laser scanning the reference unit chip; Calculating a series of reference laser reflection intensity values corresponding to each cell of the reference unit chip by integrating and calculating the optical image value and the unit laser reflection intensity value; A full scan of all semiconductor chips disposed in the wafer to calculate cell laser reflection intensity values corresponding to each cell of each semiconductor chip; Comparing the degree of similarity between the cell laser reflection intensity value and the reference laser reflection intensity value to determine whether a defect exists in each cell of each semiconductor chip, and outputting the determination result externally. A defect state measuring method of a semiconductor chip. The optical image value corresponding to each cell of the reference unit chip is calculated by a predetermined conversion library when the optical image value corresponding to each cell of the reference unit chip is calculated. And converting and calculating the converted laser reflection intensity value corresponding to each cell. The method of claim 1, wherein the reference laser reflection intensity value corresponding to each cell of the reference unit chip is calculated by averaging the optical image value and the unit laser reflection intensity value. . A scan data arithmetic processing control unit, which is selectively connected to a laser controller and an image imager controller, and which controls and stores a variety of scan data inputted from the laser controller and the imager controller; When the optical image value and the unit laser reflection intensity value corresponding to each cell of the reference unit chip are input from the laser controller and the image pickup controller, the optical image value and the unit are computed and controlled by the scan data operation processing controller. A reference laser reflection intensity value calculation unit which calculates a series of reference laser reflection intensity values by integrally calculating the laser reflection intensity values; The cell laser reflection intensity value and the reference laser reflection when the cell laser reflection intensity value corresponding to each cell of the entire semiconductor chip disposed in the wafer are inputted by the scan data calculation processing control unit and are input from the external laser controller. Comparing the degree of similarity of the intensity value, it is determined whether or not there is a defect in each cell of each semiconductor chip, and comprises a defect existence determining unit for generating a series of defect existence discrimination data reflecting the determination result Semiconductor chip scan data calculation processing tool. The optical conversion apparatus according to claim 4, wherein the optical image value corresponding to each cell of the reference unit chip is controlled by the scan data calculation processing controller, and is determined by a predetermined conversion library. And further comprising an optical image value converter for converting an optical image value corresponding to each cell of the reference unit chip into a converted laser reflection intensity value corresponding to each cell of the reference unit chip. Tools. The scan data calculation processing control unit according to claim 4, wherein the scan data calculation processing control unit is computed and controlled by the scan data calculation processing control unit, and the unit laser reflection intensity value and the optical image reflection intensity value inputted from the laser controller and the image pickup controller are controlled by the scan data calculation processing control unit. Scan data storage / receiving, storing and managing, and receiving and storing and managing the reference laser reflection intensity value calculated and output from the reference laser reflection intensity value calculating unit via the scan data calculation processing control unit. The semiconductor chip scan data calculation processing tool further comprising a management unit.