KR100523958B1 - Catalytic remote cleaning unit for CVD apparatus - Google Patents
Catalytic remote cleaning unit for CVD apparatus Download PDFInfo
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- KR100523958B1 KR100523958B1 KR10-2002-0070179A KR20020070179A KR100523958B1 KR 100523958 B1 KR100523958 B1 KR 100523958B1 KR 20020070179 A KR20020070179 A KR 20020070179A KR 100523958 B1 KR100523958 B1 KR 100523958B1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67248—Temperature monitoring
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Abstract
본 발명은 촉매를 이용한 CVD 진공박막성장장치의 원격클리닝 장치에 대한 것이다.The present invention relates to a remote cleaning apparatus for a CVD vacuum thin film growth apparatus using a catalyst.
본 발명에 따르면, 진공박막성장챔버(2)와 별체로 이루어지며 이 진공박막성장챔버(2)에 연통되는 클리닝챔버(10)와, 이 챔버(10)에 연결되어 클리닝용 가스를 공급하는 클리닝가스공급부(12)와, 상기 클리닝챔버(10) 내에 배치되며 클리닝가스와 접촉반응하여 반응성 라디칼을 생성하는 카탈라이저(16)와, 상기 카탈라이저(16)의 온도를 검출하는 온도센서(18)와, 상기 온도센서(18)의 검출신호에 따라 상기 카탈라이저(16)의 온도를 제어하는 콘트롤러(20)와, 클리닝가스공급부(12)에서 공급된 가스가 상기 카탈라이저(16)와 접촉반응에 의해 분해되어 형성되는 클리닝가스 반응성 라디칼을 상기 진공박막성장챔버(2)내로 공급하는 라디칼배출구(24)를 포함하는 것을 특징으로 하는 진공박막성장장비의 원격클리닝장치가 제공된다.According to the present invention, the cleaning chamber 10 is formed separately from the vacuum thin film growth chamber 2 and communicates with the vacuum thin film growth chamber 2, and the cleaning is connected to the chamber 10 to supply the cleaning gas. A gas supply unit 12, a catalizer 16 disposed in the cleaning chamber 10 and reacting with the cleaning gas to generate reactive radicals, and a temperature sensor 18 for detecting a temperature of the catalizer 16. And the controller 20 for controlling the temperature of the catalizer 16 according to the detection signal of the temperature sensor 18, and the gas supplied from the cleaning gas supply unit 12 is in contact with the catalizer 16. And a radical discharge port 24 for supplying the cleaning gas reactive radicals formed by decomposition into the vacuum thin film growth chamber 2.
Description
본 발명은 촉매를 이용한 CVD 진공박막성장장치의 원격클리닝 장치에 대한 것으로서, 좀 더 상세히는 클리닝효율이 우수하면서도 장치의 내구성을 향상시킬 수 있는 새로운 구조의 촉매를 이용한 CVD 진공박막성장장치의 원격클리닝 장치에 대한 것이다.The present invention relates to a remote cleaning apparatus of a CVD vacuum thin film growth apparatus using a catalyst, and more particularly, to remote cleaning of a CVD vacuum thin film growth apparatus using a catalyst having a novel structure which can improve the durability of the apparatus while having excellent cleaning efficiency. For the device.
반도체 디바이스 제조공정의 일부를 이루는 박막성장공정은 챔버 내에 놓인 기판에 막을 퇴적시키는 공정인데, 이 과정에서 기판 이외의 챔버 내의 부품이나 챔버 내벽면에도 막이 퇴적되게 된다. 이와 같이 챔버 내의 부품이나 내벽에 퇴적되는 막이 두꺼워지면 박리되어 불순물 입자로서 기판에 부착되므로, 제품 불량의 원인이 된다. 따라서, 이와 같은 박막성장장비는 챔버 내에 퇴적된 막을 주기적으로 제거하는 클리닝공정이 요구된다.The thin film growth process, which forms part of the semiconductor device manufacturing process, is a process of depositing a film on a substrate placed in a chamber. In this process, a film is deposited on a component inside the chamber other than the substrate or on the inner wall of the chamber. In this way, when the film deposited on the components or the inner wall of the chamber becomes thick, it is peeled off and adheres to the substrate as impurity particles, which causes product defects. Therefore, such thin film growth equipment requires a cleaning process for periodically removing the film deposited in the chamber.
종래에 알려진 박막성장챔버에 대한 즉석(in-situ) 클리닝 방식은 크게 플라즈마 클리닝방식과 열 클리닝방식으로 구분된다. 플라즈마 클리닝방식은 챔버 내로 소정의 클리닝가스를 도입하여 플라즈마에 의해 클리닝가스와 부착막을 반응시켜서 막을 기체상태의 생성물로 만들어서 배출시키는 것이고, 열 클리닝방식은 클리닝가스와 부착막과의 반응을 열에너지에 의해 촉진하는 것이다.The in-situ cleaning method for the conventional thin film growth chamber is classified into a plasma cleaning method and a thermal cleaning method. In the plasma cleaning method, a predetermined cleaning gas is introduced into the chamber to react the cleaning gas and the adhesion film by plasma, and the film is made into a gaseous product and discharged. The thermal cleaning method uses the thermal energy to react the reaction between the cleaning gas and the adhesion film. It is to promote.
플라즈마 클리닝방식은 직접 플라즈마 클리닝방식과 원격 플라즈마 클리닝방식으로 구분된다. 직접 플라즈마 클리닝방식은 클리닝을 위해 챔버 내에서 직접 플라즈마를 발생시키므로 이 플라즈마에 의해 챔버 내벽의 금속성분이나 세라믹성분이 함께 에칭되면서 챔버 내의 부품이 손상되고, 에칭에 의해 발생된 불순물 입자가 오염원으로 작용하게 되는 문제점이 있다. 한편, 원격 플라즈마 클리닝방식은 전술한 직접 플라즈마 클리닝방식이 가진 문제점은 없지만, 플라즈마의 발생시에 생성되는 전자 및 이온이 부착막과의 반응에 필요한 클리닝가스의 라디칼의 생성밀도를 저하시킬 뿐 아니라, 이들에 의해 라디칼의 이동도 방해되어 라디칼의 수명이 저하되기 때문에, 진공박막성장 챔버에 도달되는 액티브 라디칼의 밀도가 낮아지는 문제점이 있다. 때문에 다량의 클리닝가스를 사용해야만 하고 클리닝공정의 압력을 5 내지 10 Torr 대로 유지해야하는 제약조건을 만족해야만 한다.The plasma cleaning method is classified into a direct plasma cleaning method and a remote plasma cleaning method. The direct plasma cleaning method generates a plasma directly in the chamber for cleaning, so that metal or ceramic components on the inner wall of the chamber are etched by the plasma to damage components in the chamber, and impurity particles generated by etching act as a contaminant. There is a problem. On the other hand, the remote plasma cleaning method does not have the problems of the aforementioned direct plasma cleaning method, but electrons and ions generated at the time of plasma generation not only reduce the generation density of radicals of the cleaning gas required for reaction with the adhesion film, Since the movement of radicals is also hindered and the lifetime of radicals is reduced, there is a problem that the density of active radicals reaching the vacuum thin film growth chamber is lowered. Therefore, a large amount of cleaning gas must be used and the constraint of maintaining the pressure of the cleaning process at 5 to 10 Torr must be satisfied.
한편, 근래에는 플라즈마 클리닝방식 대신에, 열에 의한 접촉분해반응을 이용한 열 클리닝 방식 또는 촉매 클리닝 방식(cat-CVD 방식)이 소개되고 있으나, 이는 박막성장챔버 내에 발열체(catalizer)를 설치하고, 챔버 외부에서 클리닝가스를 주입하여 이 발열체에 의해 클리닝가스를 라디칼로 분해 또는 활성화시켜서 이 클리닝가스 라디칼과의 반응에 의해 챔버 내에 퇴적된 막을 제거하는 방식도 소개되고 있다. 이러한 방식은 종래의 플라즈마 클리닝방식에 비해, 플라즈마에 의한 챔버의 물리적 손상이나 클리닝가스의 이용효율이 높다는 면에서 장점이 있으나, 발열체가 클리닝공정 이외의 다른 공정에도 노출되어, 열에 의해 챔버의 내벽이나 기판홀더 등 챔버 내의 장치가 손상되는 문제점이 있고, 또한, 클리닝가스의 열반응시에 생성되는 부산물로 인해 진공박막성장 챔버 내에 오염이 발생되는 것을 피할 수 없어서 역시 제품의 품질이 저하되는 문제점이 있다.Meanwhile, instead of the plasma cleaning method, a thermal cleaning method or a catalytic cleaning method (cat-CVD method) using a catalytic cracking reaction by heat has been introduced, but this is provided with a heater in the thin film growth chamber and outside the chamber. In addition, a method of injecting a cleaning gas into and decomposing or activating the cleaning gas into radicals by the heating element to remove a film deposited in the chamber by reaction with the cleaning gas radical has been introduced. This method has advantages in terms of physical damage to the chamber due to plasma and high utilization efficiency of the cleaning gas, but the heating element is exposed to other processes than the cleaning process. There is a problem in that the device in the chamber such as the substrate holder is damaged, and also, the contamination of the vacuum thin film growth chamber due to by-products generated during the thermal reaction of the cleaning gas is inevitable, and thus there is a problem in that the quality of the product is deteriorated.
본 발명은 전술한 바와 같은 종래의 진공박막성장장비의 클리닝상의 문제점에 착안하여 제안된 것으로서, 본 발명은 종래의 플라즈마 클리닝방식의 문제점과 열 클리닝방식 또는 촉매 클리닝방식의 문제점을 해소할 수 있는 새로운 구조의 진공박막성장장비의 클리닝장치를 제공하고자 하는 것이다. 즉, 본 발명은 플라즈마에 의한 박막성장챔버 내벽이나 기판홀더 등의 장치의 손상을 방지하고, 클리닝가스의 사용을 절감하면서 라디칼의 밀도를 증대시킬 수 있어서 클리닝효율을 향상시킬 수 있는 새로운 구조의 진공박막성장장비의 클리닝장치를 제공하고자 하는 것이다. The present invention has been proposed in view of the cleaning problems of the conventional vacuum thin film growth equipment as described above, the present invention is a new solution that can solve the problems of the conventional plasma cleaning method and thermal cleaning method or catalyst cleaning method It is to provide a cleaning device for a vacuum thin film growth equipment having a structure. In other words, the present invention prevents damage to devices such as the inner wall of the thin film growth chamber, the substrate holder, and the like by plasma, and can increase the density of radicals while reducing the use of cleaning gas, thereby improving the cleaning efficiency. It is to provide a cleaning device of the thin film growth equipment.
본 발명에 따르면, 진공박막성장챔버(2)와 별체로 이루어지며 이 진공박막성장챔버(2)에 연통되는 클리닝챔버(10)와, 이 챔버(10)에 연결되어 클리닝용 가스를 공급하는 클리닝가스공급부(12)와, 상기 클리닝챔버(10) 내에 배치되며 클리닝가스와 접촉반응하여 반응성 라디칼을 생성하는 카탈라이저(16)와, 상기 카탈라이저(16)의 온도를 검출하는 온도센서(18)와, 상기 온도센서(18)의 검출신호에 따라 상기 카탈라이저(16)의 온도를 제어하는 콘트롤러(20)와, 클리닝가스공급부(12)에서 공급된 가스가 상기 카탈라이저(16)와 접촉반응에 의해 분해되어 형성되는 클리닝가스 반응성 라디칼을 상기 진공박막성장챔버(2)내로 공급하는 라디칼배출구(24)를 포함하는 것을 특징으로 하는 진공박막성장장비의 원격클리닝장치가 제공된다.According to the present invention, the cleaning chamber 10 is formed separately from the vacuum thin film growth chamber 2 and communicates with the vacuum thin film growth chamber 2, and the cleaning is connected to the chamber 10 to supply the cleaning gas. A gas supply unit 12, a catalizer 16 disposed in the cleaning chamber 10 and reacting with the cleaning gas to generate reactive radicals, and a temperature sensor 18 for detecting a temperature of the catalizer 16. And the controller 20 for controlling the temperature of the catalizer 16 according to the detection signal of the temperature sensor 18, and the gas supplied from the cleaning gas supply unit 12 is in contact with the catalizer 16. And a radical discharge port 24 for supplying the cleaning gas reactive radicals formed by decomposition into the vacuum thin film growth chamber 2.
본 발명의 다른 특징에 따르면, 상기 클리닝챔버(10)는 상기 진공박막성장챔버(2)의 둘레부에 착탈가능하게 구비되는 것을 특징으로 하는 진공박막성장장비의 원격클리닝장치가 제공된다.According to another feature of the present invention, the cleaning chamber 10 is provided with a remote cleaning apparatus of the vacuum thin film growth equipment, characterized in that detachably provided at the circumference of the vacuum thin film growth chamber (2).
본 발명의 다른 특징에 따르면, 상기 카탈라이저(16)는 챔버(10)의 전극부(15)에 소켓(17)결합에 의해 착탈가능하도록 구비된 것을 특징으로 하는 진공박막성장장비의 원격클리닝장치가 제공된다.According to another feature of the present invention, the catalizer 16 is remote cleaning device for the vacuum thin film growth equipment, characterized in that the detachable by the socket 17 is coupled to the electrode portion 15 of the chamber (10). Is provided.
이하에서 도면을 참조하여 본 발명의 바람직한 실시예를 설명한다. 도 1은 본 발명의 바람직한 실시예로서, 도시된 바와 같이 본 발명에 따르면, 기판에 소정의 박막을 성장시키는 CVD 진공박막성장챔버(2)와 별체로 본 발명에 따른 클리닝챔버(10)가 구비된다. 바람직하게는 이 클리닝챔버(10)는 콤팩트한 크기, 예를들면 50*30*30cm 이내의 크기로서 식각에 강한 재질로 되거나, 식각에 강한 코팅이 처리되며, 진공박막성장챔버(2)의 위, 옆 또는 아래 부분에 배관에 의해 접속되어 착탈가능하게 배치된다. Hereinafter, with reference to the drawings will be described a preferred embodiment of the present invention. 1 is a preferred embodiment of the present invention, according to the present invention, as shown, the cleaning chamber 10 according to the present invention is provided separately from the CVD vacuum thin film growth chamber 2 for growing a predetermined thin film on the substrate do. Preferably, the cleaning chamber 10 has a compact size, for example, a size within 50 * 30 * 30cm, which is made of a material resistant to etching, or which is subjected to an etching resistant coating, and above the vacuum thin film growth chamber 2. It is arranged to be detachably connected to the side or bottom by piping.
이 클리닝챔버(10)에는 클리닝가스공급부(12)가 공급관(13)을 통해 접속된다. 이 클리닝가스공급부(12)를 통해 공급되는 클리닝가스로는 불소계 또는 염소계로서, 예를 들면 NF3, F2, Cl2, CF4, C2F6 , C3F8, CCl4, C2ClF5, ClF3 등이 사용된다. 또한, 클리닝챔버(10)의 내에는 클리닝가스공급관(13)에 연결되어 가스를 챔버(10) 내에서 골고루 분산시키기 위한 가스분배기(14)가 구비된다.The cleaning gas supply unit 12 is connected to the cleaning chamber 10 through a supply pipe 13. The cleaning gas supplied through the cleaning gas supply unit 12 is fluorine or chlorine, for example, NF 3, F 2 , Cl 2 , CF 4 , C 2 F 6 , C 3 F 8 , CCl 4 , C 2 ClF 5 , ClF 3 and the like are used. In addition, the cleaning chamber 10 is provided with a gas distributor 14 connected to the cleaning gas supply pipe 13 to evenly distribute the gas in the chamber 10.
클리닝챔버(10)의 내에는 클리닝가스와 접촉되어 분해반응를 통해 라디칼로 분해하여 활성화시키는 카탈라이저(catalizer)(16)가 구비된다. 이 카탈라이저로는 W, Ir, Ta, Mo 또는 이와 유사한 촉매효과를 얻을 수 있는 금속, 비금속, 세라믹(SiC, Black diamond, 칸탈, 산화바나듐 등 코팅을 포함한 재료)로 이루어져서 높은 온도에서 촉매 또는 화학반응을 일으키는 필라멘트 형태의 발열체로 구성된다. 바람직하게는 이 카탈라이저(16)의 수명이 다한 경우에 용이하게 교체할 수 있도록 카탈라이저(16)를 챔버(10)의 전극부(15)의 소켓(17)에 착탈가능하게 구성함으로써, 용이하게 결합 또는 분리할 수 있도록 한다. 도 2는 본 발명의 실시예의 전극부(15)의 구조를 보여주는데, 관통전극(34)이 세라믹재료로 된 절연바디(32)의 관통공(33)을 소켓(17)에 접속되고, 이 소켓(17)에 카탈라이저(16)가 착탈가능하게 형성된다. 그리고, 이 전극부(15)는 밀봉커버(35)에 의해 볼트체결 및 밀봉처리된다. 그리고 이 밀봉커버(35)에는 불활성가스공급부(26)가 구비하여 절연바디(32)의 관통공(33)을 통해 불활성가스가 챔버(10) 내로 유입되도록 한다. Ar이나 He 등의 불활성가스는 카탈라이저(16)의 접속배선을 보호하기 위한 것으로서, 클리닝챔버(10)의 프로세스별로 그 유입량을 적절히 콘트롤할 수 있도록 구성된다.The cleaning chamber 10 is provided with a catalizer 16 which contacts with the cleaning gas and decomposes and activates radicals through a decomposition reaction. This catalyzer consists of metals, nonmetals, and ceramics (materials including coatings such as SiC, Black diamond, Kanthal, vanadium oxide, etc.) which can achieve catalytic effects such as W, Ir, Ta, Mo, or similar. It consists of a heating element in the form of a filament causing a reaction. Preferably, the cartridge 16 is detachably configured to the socket 17 of the electrode portion 15 of the chamber 10 so that the cartridge 16 can be easily replaced when the life of the cartridge 16 is over. Can be combined or separated. Fig. 2 shows the structure of the electrode portion 15 of the embodiment of the present invention, in which the through-electrode 34 is connected to the socket 17 by a through hole 33 of the insulating body 32 made of ceramic material. The catalizer 16 is detachably formed at 17. The electrode portion 15 is bolted and sealed by the sealing cover 35. In addition, the sealing cover 35 is provided with an inert gas supply unit 26 to allow the inert gas to flow into the chamber 10 through the through hole 33 of the insulating body 32. An inert gas such as Ar or He is for protecting the connection wiring of the catalizer 16, and is configured to appropriately control the inflow amount for each process of the cleaning chamber 10.
그리고, 카탈라이저(16)의 온도나 압력 등을 제어하기 위한 콘트롤러(20)가 구비된다. 이를 위해, 콘트롤러(20)에는 카탈라이저(16)의 온도를 검출하는 온도센서(18)와 전류계(32), 전압계(33), 가변저항(34)이 전기적으로 접속되고, 압력계(22)가 연결된다. 또한, 클리닝챔버(10)를 냉각시키기 위한 냉각라인(28)이 클리닝챔버(10)의 외부에 배치되는데, 이 냉각라인(28)에는 냉각수가 순환된다.And the controller 20 for controlling the temperature, pressure, etc. of the catalizer 16 is provided. To this end, the controller 20 is electrically connected to a temperature sensor 18, an ammeter 32, a voltmeter 33, a variable resistor 34 that detect the temperature of the catalizer 16, and a pressure gauge 22. Connected. In addition, a cooling line 28 for cooling the cleaning chamber 10 is disposed outside the cleaning chamber 10, in which cooling water is circulated.
이러한 구성에 따르면, 종래의 촉매반응식 클리닝방법이 플라즈마 클리닝방식에 비해 좋은 장점, 즉, 클리닝가스의 사용이 저감되고 이용효율이 높은 것과 플라즈마로 인한 챔버의 손상이 적은 장점을 그대로 가지면서도, 기존의 박막성장챔버와 클리닝챔버를 별체로 구성하여 원격으로 배치하거나 용이하게 착탈가능하게 구성하여 클리닝가스 라디칼의 생성프로세스를 다른 프로세스와 독립시킴으로써, 종래의 카탈라이저(16)가 박막성장챔버 내에 일체로 구비됨으로 인한 문제점, 즉 카탈라이저가 클리닝공정 이외의 다른 공정에도 노출됨으로써, 카탈라이저의 복사열에 의해 박막성장챔버의 내벽이나 기판홀더가 쉽게 손상되는 문제점이나, 클리닝가스의 열반응시에 생성되는 부산물로 인해 진공박막성장챔버 내에 오염이 발생되는 문제점 등을 해소할 수 있다. 아울러 카탈라이저(16)를 소켓결합으로 착탈함으로써, 수명이 다한 카탈라이저를 용이하게 교체할 수 있어서, 장치의 유지보수가 용이하게 된다.According to this configuration, the conventional catalytic cleaning method has the advantages over the plasma cleaning method, that is, while the use of the cleaning gas is reduced and the use efficiency is high and the damage of the chamber due to the plasma is less, The thin film growth chamber and the cleaning chamber may be separately configured to be remotely disposed or easily detachable to separate the process of generating cleaning gas radicals from other processes, thereby allowing the conventional catalizer 16 to be integrated into the thin film growth chamber. Problem due to the exposure of the catalyzer to a process other than the cleaning process, the inner wall of the thin film growth chamber or the substrate holder easily damaged by the radiant heat of the catalyzer, or the by-products generated during the thermal reaction of the cleaning gas. The problem that contamination occurs in the vacuum thin film growth chamber It can revoke. In addition, by attaching and detaching the cartridge 16 by the socket coupling, it is possible to easily replace the cartridge having reached the end of life, and the maintenance of the device is easy.
이상에 설명한 본 발명에 따르면, 클리닝가스의 사용이 저감되고 이용효율이 높은 것과 플라즈마로 인한 챔버의 손상이 적은 장점과 아울러, 카탈라이저가 클리닝공정 이외의 다른 공정에도 노출되어 박막성장챔버의 내벽이나 기판 홀더 등이 쉽게 손상되거나, 클리닝가스의 열반응시에 생성되는 부산물로 인해 진공박막성장 챔버 내의 오염이 발생되는 일이 방지되고, 카탈라이저의 교체가 더욱 용이하게 됨으로써, 클리닝효율이 우수하면서도 장치의 내구성을 향상시킬 수 있게 된다. According to the present invention described above, the use of the cleaning gas is reduced, the utilization efficiency is high, and the damage of the chamber due to the plasma is small, and the catalizer is exposed to other processes besides the cleaning process, so that the inner wall of the thin film growth chamber is reduced. The substrate holder is easily damaged or the by-products generated during the thermal reaction of the cleaning gas prevent contamination of the vacuum thin film growth chamber, and replacement of the catalyzer is made easier, thereby improving the cleaning efficiency of the apparatus. Durability can be improved.
도 1은 본 발명에 따른 실시예의 개략 구성도1 is a schematic structural diagram of an embodiment according to the present invention
도 2는 상기 실시예의 전극부의 구성도2 is a configuration diagram of an electrode part of the embodiment;
<도면의 주요부분에 대한 부호의 설명><Description of Symbols for Main Parts of Drawings>
2. 진공박막성장챔버 10. 클리닝챔버 2. Vacuum thin film growth chamber 10. Cleaning chamber
12. 클리닝가스공급부 16. 카탈라이저12. Cleaning gas supply part 16. Catalizer
17. 소켓 18. 온도센서17. Socket 18. Temperature sensor
24. 라디칼 배출구 26. 불활성가스공급부24. Radical outlet 26. Inert gas supply
Claims (3)
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