KR100517821B1 - Field Emission Display with a Gate Plate - Google Patents

Abstract

The present invention relates to a field emission display in which a gate plate having a gate hole and a gate electrode around the gate hole is formed between an anode plate having phosphor and a cathode plate having a field emitter and a control device for controlling field emission current, wherein the field emitter of the cathode plate is constructed to be opposite to the phosphor of the anode plate through the gate hole. According to the present invention, it is possible to significantly reduce the display row/column driving voltage by applying scan and data signals of the field emission display to the control device of each pixel, and the present invention is directed to improve the brightness of the field emission display in such a manner that the electric field necessary for field emission is applied through the gate electrode of the gate plate to freely control the distance between the anode plate and the cathode plate, so that a high voltage can be applied to the anode.

Description

Field emission display with a gate plate

BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a field emission display (FED) in which a field emission device is applied to a flat panel display. More specifically, the present invention relates to an anode plate including a phosphor, a field emitter, and a field emission current thereof. Between a cathode plate having a control element, a gate plate having a penetrating gate hole and a gate electrode around the electrode plate, wherein the field emitters of the cathode plate can face each other with the phosphor of the anode plate through the gate hole. And a field emission display.

Field emission displays are vacuum packaging such that cathode plates with field emitters and anode plates with phosphors are spaced apart from each other by a predetermined distance (eg, 2 mm) apart from one another. It is a device that displays an image by cathodoluminescence of the phosphor by colliding electrons emitted from the field emitter of the cathode plate with the phosphor of the anode plate. Recently, a conventional cathode ray tube (CRT) is used. It is being greatly researched and developed as a replaceable flat panel display. Field emitters, a key component of field emission display cathode plates, vary greatly in electron emission efficiency depending on device structure, emitter material, and emitter shape.

Currently, the structure of the field emission device can be classified into a diode composed of a cathode (or an emitter) and an anode, and a triode composed of a cathode, a gate, and an anode. Emitter materials are mainly metal, silicon, diamond, diamond like carbon, carbon nanotubes, etc.In general, metals and silicon have a tripolar structure, and diamond or carbon nanotubes are used. Is mainly manufactured in a bipolar structure.

Dipole field emitters are mainly manufactured by forming diamond or carbon nanotubes in the form of a film. Compared to the tripole type, bipolar field emitters are disadvantageous in terms of controllability of electron emission and low voltage driving. High has the advantage.

Hereinafter, a field emission display having a field emitter according to the prior art will be described with reference to the accompanying drawings.

1 is a schematic diagram showing the configuration of a field emission display with a conventional bipolar field emitter.

A cathode plate 11 having a strip-shaped cathode electrode 11 arranged on a lower glass substrate 10B and a film-type field emitter material 12 formed on one region of the cathode electrode 11; Phosphors of red (R), green (G) and blue (B) on a transparent anode electrode 13 arranged in a tee shape on a glass substrate 10T and a part of the transparent electrode 13 ( An anode plate having 14) is vacuum packaged in parallel with each other while the components of the cathode plate and the anode plate face each other with a spacer 15 as a support. The cathode electrode 11 of the cathode plate and the transparent anode electrode 13 of the anode plate are arranged so as to intersect with each other so that the crossing area is defined as one pixel.

The electric field required for electron emission in the field emission display of FIG. 1 is given by the voltage difference between the cathode electrode 11 and the anode electrode 13, and an electric field of 0.1 V / μm or more is usually applied to the field emitter material. It is known that electron emission occurs in field emitters.

FIG. 2 is a schematic diagram showing the configuration of a field emission display of the prior art, which is proposed to improve the disadvantages of the field emission display of FIG. 1 and employs a control element for controlling the field emitter at each pixel of the cathode plate. to be.

A band-shaped scan signal line 21S and a data signal line 21D made of a metal on the glass substrate 20B and enabling electrical row addressing, and the scan signal line 21S and the data signal line Each pixel defined by 21D is a film type (thin or thick film) electric field emitter 22 made of diamond, diamond-like carbon, carbon nanotube, or the like, a scan signal line 21S, a data signal line 21D, and an electric field. A cathode plate made of a control element 23 connected to the emitter 22 to control the field emission current according to the scan and data signals of the display; and a transparent anode electrode arranged in a tee shape on the glass substrate 20T. An anode plate having red (R), green (G), and blue (B) phosphors 25 over a portion of the transparent electrode 24 supports a spacer 26. So that the components of the cathode and anode plates Calligraphy is parallel to vacuum packaging.

The field emission display of FIG. 2 applies a high voltage to the anode electrode 24 to induce electron emission from the film-type field emitter 22 of the cathode plate and at the same time accelerate the emitted electrons to high energy. When the signal of the display is input to the control element 23 through the scan signal line 21S and the data signal line 21D, the control element 23 controls the amount of electrons emitted from the film-type electric field emitter to express the matrix image. do.

As described above, the bipolar field emitter used in the field emission display of FIGS. 1 and 2 has a merit that the structure is simple and the manufacturing process is easy because the gate and the gate insulating film are not required unlike the conical tripole emitter. .

In addition, the dipole field emitter has a high probability of breakdown of the field emitter due to the sputtering effect when electrons are emitted, resulting in high reliability of the device, and the destruction of gate and gate insulators, which is a major problem in the tripole field emitter Not at all.

However, the field emission display with the bipolar field emitter of FIG. 1 has an electrode of the upper and lower plates (typically between 200 μm and 2 mm) spaced apart at a considerable distance from the high electric field required for field emission (cathode electrode 11 of FIG. 1). And the transparent anode electrode 13), a high voltage display signal is required, and therefore, an expensive high voltage driving circuit is required.

In particular, in the field emission display having the bipolar field emitter of Fig. 1, the anode electrode 13 is the signal line of the display and the electron acceleration electrode, even though the gap between the upper and lower plates reduces the voltage required for electron emission. Low voltage driving is almost impossible. In order to emit phosphors in a field emission display, high energy electrons of 200 eV or more are generally required, and since the light emission efficiency is higher as the electron energy is larger, a high luminance field emission display can be obtained only by applying a high voltage to the anode electrode.

The active-matrix field emission display with the conventional bipolar field emitter of FIG. 2 employs the control element 23 of the field emitter at each pixel and inputs the display signal therewith, thereby providing the high voltage driving problem of FIG. Problems such as non-uniformity of electron emission, cross talk and the like can be solved at the same time. However, the high voltage applied to the anode electrode 24 for field emission and electron acceleration will induce a significant voltage on the control element 23 of each pixel, if the element breakdown voltage of the control element 23. If voltage is induced above, the control element is destroyed.

Therefore, the voltage that can be applied to the anode electrode 24 is limited according to the element breaking characteristics of the control element 23, and has a disadvantage in that it is difficult to manufacture a high luminance field emission display due to the limited anode voltage.

Accordingly, the present invention has been made to solve the above-described problem, and an object of the present invention is to significantly reduce the display row driving voltage by inputting and driving a scan and data signal of a field emission display to a control element of each pixel. To ensure that

Another object of the present invention is configured to apply the electric field required for the field emission through the gate electrode of the gate plate to be able to freely adjust the gap between the anode plate and the cathode plate to apply a high voltage to the anode, thus, It is to improve the brightness of the field emission display.

Another object of the present invention is that the gate plate can be fabricated and assembled independently of the cathode plate, which makes the fabrication process very easy, and essentially eliminates the destruction of the gate insulating film of the field emitter, thereby improving manufacturing productivity and yield. will be.

One aspect of the present invention as a technical means for achieving the above object is an anode plate having a transparent electrode on a substrate and a phosphor on one region of the transparent electrode; A band-shaped matrix signal lines that enable matrix addressing on top of the substrate, and each pixel defined by the row and line signal lines, each pixel comprising two film-field emitters and at least two connected to the matrix signal lines. A cathode plate having a terminal and one terminal connected to said film type field emitter, said control plate controlling said field emitter; A gate plate having a gate hole penetrating therein and having a gate electrode which is one electrode formed around an upper portion of the gate hole, the gate plate being formed independently of the cathode plate; And a spacer configured to support the independently manufactured gate plate in contact with one of the cathode plate and the anode plate, and to be spaced apart from the gate plate between other non-contact plates, wherein the electric field emitter of the cathode plate is provided. The gate is configured to face each other with the phosphor of the anode plate through the gate hole, and the area between the spaced apart cathode plate and the anode plate is vacuum packaged. To provide.

It is preferable that the anode plate, the cathode plate and the gate plate each consist of a separate insulating substrate.

On the other hand, the spacer may be formed between the cathode plate and the gate plate, it may be formed between the anode plate and the gate plate.

In addition, the phosphor of each pixel may be a phosphor of red (R), green (G), or blue (B). A light shielding film may be further formed in a predetermined region between the phosphors of the anode plate.

Preferably, the field emitter is configurable as a thin film or a thick film made of diamond carbon or carbon nanotubes.

The control element may be a thin film transistor or a metal-oxide-semiconductor field effect transistor.

Meanwhile, a DC voltage is applied to the gate electrode to induce electron emission from the film-type field emitter of the cathode plate, and a DC voltage is applied to the transparent electrode of the anode plate to accelerate the emitted electrons to high energy, and scan And addressing a data signal to a control element of the field emitter in each pixel of the cathode plate so that the control element of the field emitter can control the electron emission of the field emitter to represent an image.

Preferably, a DC voltage of 50 to 1500 V is applied to the gate electrode of the gate plate, and a high voltage of 2 kV or more may be applied to the transparent electrode of the anode plate.

The gradation representation of the image can be ensured by changing the pulse amplitude and / or pulse width (duration) of the data signal voltage applied to the field emitter through the control of the control element. In this case, the voltage of the data signal applied to the field emitter may be a pulse of 0 to 50V.

Meanwhile, an electron focusing electrode may be further interposed between the cathode plate and the gate plate. It may also be configured to serve as a light shielding film.

In addition, a constant voltage is applied to the electron focusing electrode to help electrons emitted from the field emitter to focus well on the phosphor of the anode plate, and together with the gate electrode of the gate plate, an electric field caused by the anode voltage. It is possible to suppress the field emission of the emitter.

Further, the field emitter may be composed of dots separated into several regions, and the gate holes of the gate plate may be configured in a number corresponding to each of these dots.

In addition, the control element is a thin film transistor, a gate made of a metal on the cathode plate; A gate insulating film formed on the cathode plate including the gate; An active layer formed of a semiconductor thin film on a portion of the gate and the gate insulating film; Source and drain formed at both ends of the active layer; It is possible to include an interlayer insulating layer having a contact hole for connecting the source and drain with an electrode.

An electron focusing electrode made of a metal can be further formed on the interlayer insulating layer. The active layer of the thin film transistor is preferably an amorphous silicon or polysilicon layer.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the following embodiments are provided to those skilled in the art to fully understand the present invention, and may be modified in various forms, and the scope of the present invention is limited to the embodiments described below. It is not.

The field emission display has a particularly important difference in the structure and driving method of the cathode plate, the gate plate as compared to the field emission display according to the prior art. Hereinafter, with reference to FIGS. 3 to 8 will be described in detail.

First, Figure 3 is a schematic diagram showing the configuration of an active-matrix field emission display having a gate plate according to an embodiment of the present invention, Figure 4 is a cathode plate, gate plate, ah of the field emission display according to an embodiment of the present invention This is a schematic view showing the node plates separated. The field emission display according to the embodiment of the present invention includes a cathode plate 100, a gate plate 200, and an anode plate 300.

As shown in FIG. 4, the cathode plate 100 is formed on a insulating substrate 110 made of glass, plastic, various ceramics, or the like, and has a strip-shaped row signal line 120S and a column, which are made of metal to enable electrical row addressing. It has a signal line 120D. The unit pixels are defined by the row signal line 120S and the column signal line 120D. Each pixel includes a film type (thin or thick film) electric field emitter 130 made of diamond, diamond-like carbon, carbon nanotube, or the like, and a control element 140 of the electric field emitter. The control element 140 preferably has at least two terminals connected to the row signal line 120S and the column signal line 120D and one terminal connected to the film-type electric field emitter 130. 40 may be an amorphous thin film transistor, a polysilicon thin film transistor, or a metal-oxide-semiconductor field effect transistor.

The gate plate 200 includes a gate hole 220 penetrating on the substrate 210 and a gate electrode 230 made of metal around the gate hole 220. The substrate 210 of the gate plate 200 may be formed of a transparent substrate such as glass, plastic, various ceramics, various transparent insulating substrates, or the like, and in some cases, an opaque substrate may be used. The thickness of the gate plate 200 may be, for example, 0.01 to 1.1 mm, and the gate electrode 230 may be manufactured to a thickness of about several hundreds to thousands of micrometers. The metal usable as the gate electrode 230 is not particularly limited, for example, chromium, aluminum, molybdenum, or the like. In addition, the gate hole 220 may be formed to open slightly larger than each pixel, for example, to serve as an opening of a unit pixel (for example, about several tens of micrometers to several hundreds of micrometers) formed in the cathode plate 100. However, the size of the gate hole 220, the shape of the cut surface, the thickness of the gate plate 200, the thickness of the gate electrode 230, the shape and distance spaced apart from the electric field emitter 130 are not particularly limited, and variously. Modifications are apparent to those skilled in the art.

As shown in FIG. 4, the anode plate 300 is formed on a transparent insulating substrate 110 such as glass, plastic, or various ceramics, and formed on a transparent electrode 320 and a part of the transparent electrode 320. R), green (G), and blue (B) phosphors 330 are provided.

Meanwhile, the cathode plate 100, the gate plate 200, and the anode plate 300 are supported by using the spacer 400 as shown in FIGS. 3 and 4, and the electric field emitter of the cathode plate 100 ( 130 is vacuum packaged to face and parallel to the phosphor 330 of the anode plate 300 through the gate hole 220 of the gate plate 200. The spacer 400 may be made of glass bead beads, ceramics, or polymers, and may have a thickness of about 200 μm to 3 mm, for example.

On the other hand, it is also possible to select the type of metal used for the gate electrode 230 or the thickness of the film to serve as the light shielding film.

Next, an example of a method of manufacturing a field emission display according to an embodiment of the present invention will be described in detail with reference to FIG. 5. 5 is a cross-sectional view showing unit pixels of the field emission display according to the present invention. In the embodiment of FIG. 5, the gate plate is in close contact with the cathode plate, while the anode plate is vacuum-packed apart from the gate plate with the spacer 400 as a support. The cathode plate, the gate plate, and the anode plate can be manufactured independently and joined to each other.

The unit pixel of the field emission display of FIG. 5 comprises a cathode plate, a gate plate and an anode plate. The cathode plate includes a substrate 110, a thin film transistor portion, an field emitter, and the like.

The thin film transistor portion may include a gate 141 made of metal on a portion of the substrate 110 and a gate insulating film of a thin film transistor made of an amorphous silicon nitride film (a-SiNx) or a silicon oxide film on the substrate 110 including the gate 141. 142, an active layer 143 of a thin film transistor made of amorphous silicon (a-Si) on a portion of the gate 141 and the gate insulating layer 142, and n-type amorphous silicon at both end regions of the active layer 143. A source 144 and a drain 145 of the thin film transistor including a source electrode 146, a drain 145, and a gate insulating film of a thin film transistor formed of a metal on a portion of the source 144 and the gate insulating film 142. A part of the drain electrode 147 of the thin film transistor, the active layer 143 of the thin film transistor, the source electrode 146 and the drain electrode 147 of the thin film transistor formed on a part of the 142. And an interlayer insulating film (passivation insulating film) 148 made of an amorphous silicon nitride film or a silicon oxide film thereon. Meanwhile, an electron focusing electrode 149 made of metal may be disposed on a portion of the interlayer insulating layer 148. The electron focusing electrode 149 may also function as a light shielding film, and may also perform a function of focusing electrons emitted from the field emitter 130 by applying an appropriate voltage. The field emitter 130 may be formed of diamond, diamond-like carbon, carbon nanotube, or the like on a portion of the drain electrode 147 of the thin film transistor.

The gate plate has a surface where no gate electrode 230 is in close contact with the cathode plate, and the gate hole 220 is aligned with the field emitter 130 of the cathode plate, and the spacer 400 is aligned with each other. As the support, the anode plate and the gate plate are formed to be spaced apart from each other, and are vacuum-packed and aligned so as to face each other with the phosphor 330 of the anode plate and the field emitter 130 of the cathode plate. The spacer 400 serves to maintain the separation between the cathode plate / gate plate and the anode plate and does not necessarily need to be installed in every pixel.

The gate plate includes a gate hole 220 formed through the glass substrate 210, and a gate electrode 230 made of metal around the gate hole 220.

The anode plate is formed between a transparent electrode 320 formed in a portion of the substrate 310, a red, green, and blue phosphor 330 formed on a portion of the transparent electrode 320, and the phosphor 330. A black matrix 340 is provided.

On the other hand, since the gate plate can be manufactured independently of the cathode plate, the manufacturing process is very easy, and it is possible to fundamentally eliminate the gate insulating film destruction of the field emitter. Thus, the independently manufactured gate plate, cathode plate and anode plate are combined with each other. Through this, the manufacturing productivity and yield of the field emission display can be greatly improved.

Hereinafter, the driving principle of the field emission display according to the present embodiment will be described in detail with reference to FIGS. 3 to 5.

A DC voltage of 50 to 1500 V, for example, is applied to the gate electrode 230 of the gate plate to induce electron emission from the film-type field emitter 130 of the cathode plate and at the same time to the transparent electrode 320 of the anode plate. High voltage of 2kV or higher is applied to accelerate the emitted electrons to high energy. On the other hand, the voltage applied to the row signal line 120S and the column signal line 120D of the display is adjusted to control the operation of the control element of the field emitter in each pixel of the cathode plate. That is, the control element 23 of the field emitter of each pixel controls the electron emission of the field emitter 130 to represent the image.

At this time, the voltage applied to the gate electrode 230 of the gate plate suppresses the electron emission of the field emitter due to the anode voltage, and also locally arcs by forming an overall uniform potential between the anode plate and the gate plate. It also serves to prevent arching. Voltages applied to the row signal line 120S and the column signal line 120D of the display are respectively connected to the gate and the source of the thin film transistor, and the voltage applied to the gate is 5 V or more when the thin film transistor in which the active layer is formed of amorphous silicon is turned on. It may be 50V or less, and when turned off, 5V or less or a negative voltage may be applied. In addition, the voltage applied to the source may be about 0 to 50V. The control of the applied voltage is performed by an external driver circuit unit (not shown).

Next, the gradation representation of this field emission display is demonstrated.

The gray scale representation of a conventional two-electrode field emission device is performed using a pulse width modulation (PWM) scheme. This method expresses the gray scale by adjusting the duration of the voltage of the data signal applied to the field emitter. The gray scale is expressed through the difference in the amount of electrons emitted during the given time. That is, if the amount of electrons is large for a given time, the pixel emits light having high luminance. However, such a method shows a fatal limitation in the situation where the width (time) of the pulse allocated to the unit pixel gradually decreases in the implementation of the large screen. In addition, it is also difficult to accurately control the amount of electron emission.

The driving method of the present embodiment can overcome such problems, and the gray scale representation of the field emission device can be independently or mixed with PWM (Pulse Width Modulation) and PAM (Pulse Amplitude). The PAM method expresses the gray scale based on the difference in amplitude applied to the data signal. The amount of electrons transmitted to the field emitter may be changed through the level difference of the voltage applied to the source while the thin film transistor is turned on. I use it. It is natural that the difference in voltage levels can be represented by two or more levels. By using such a driving method, it is possible not only to apply to a large screen but also to control electron emission constantly.

Meanwhile, a constant voltage is applied to the electron focusing electrode 149 to help electrons emitted from the field emitter 130 of the cathode plate to be focused on the phosphor 330 of the anode plate. Together with the electrode 230, a function of suppressing field emission of the field emitter 130 due to the anode voltage is provided. When the electron focusing electrode 149 is formed as a light shielding film, the active layer 143 of the thin film transistor may be prevented from being exposed to the phosphor of the anode plate or the surrounding light.

Hereinafter, another embodiment or modifications of the present invention will be described in detail with reference to FIGS. 6 to 8.

6 is a diagram showing the configuration of a field emission display according to another embodiment of the present invention. The components of the cathode plate, the gate plate, and the anode plate are the same as those of the embodiment of FIG. 5 except that the portion in which the spacer 400 is inserted is the gate plate and the cathode plate. That is, the surface without the gate electrode 230 of the gate plate is in close contact with the anode plate.

7 is a diagram illustrating a configuration of a field emission display according to another embodiment of the present invention. In the case of the embodiment of Figure 7, the anode plate is the same as the embodiment of Figure 5, but the field emitter 130 of the cathode plate is composed of several dots, the gate hole 220 of the gate plate It differs in that it consists of several pieces so that it may correspond with the number of dots of the field emitter 130 of a cathode plate. Such a structure is effective in applying a high voltage to the electrode of the anode plate, and has an effect of preventing the anode electric field from adversely affecting the field emitter through a plurality of dots.

8 is a cross-sectional view showing yet another embodiment of the field emission display according to the present invention. In the embodiment of FIG. 8, the components of the cathode plate and the anode plate are the same as those of the embodiment of FIG. 7, except that the gate hole 220 of the gate plate is larger than the phosphor 340 of the anode plate. Has a double hole made up of small holes corresponding to the field emitter 130 of the surface of the gate plate without the gate electrode 230 is in close contact with the anode plate, while the cathode plate supports the spacer as The vacuum packaging is different from the gate plate.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes are possible in the art without departing from the technical spirit of the present invention. It will be clear to those of ordinary knowledge.

As described above, in the present invention, the field emission display is composed of an anode plate, a cathode plate, and a gate plate made of a glass substrate, and the cathode plate is each pixel defined by the signal line and the matrix signal line enabling matrix addressing. The display matrix driving voltage can be greatly reduced by forming a film type electric field emitter and a control element of the field emitter, and inputting and driving the scan and data signals of the display to the control element of each pixel. It is advantageous to use a low-cost low-voltage driving circuit in place of the high-voltage driving circuit required for the matrix driving of the bipolar field emission display.

On the other hand, in the present invention, since the electric field required for the field emission can be applied through the gate electrode of the gate plate, it is possible to freely adjust the distance between the anode plate and the cathode plate, so that a high voltage can be applied to the anode. The luminance of the emitting display can be greatly increased. In addition, the voltage applied to the gate electrode of the gate plate suppresses the electron emission of the field emitter due to the anode voltage, and also prevents local arcing by forming an overall uniform potential between the anode plate and the gate plate, thereby preventing the field emission. Significantly improve the life of the display.

In addition, since the gate plate can be fabricated and assembled independently of the cathode plate, the fabrication process is very easy, and since the gate dielectric breakdown of the field emitter can be essentially eliminated, the production productivity and yield of the field emission display are greatly improved. You can.

As mentioned above, although preferred embodiment of this invention was described in detail, this invention is not limited to the said embodiment, A various deformation | transformation by a person of ordinary skill in the art within the scope of the technical idea of this invention is carried out. This is possible.

1 is a schematic diagram showing the construction of a field emission display with a conventional bipolar field emitter.

2 is a schematic diagram showing the construction of an active-matrix field emission display with a conventional bipolar field emitter.

Figure 3 is a schematic diagram showing the construction of an active-matrix field emission display with a gate plate according to the present invention.

4 is a schematic view showing a cathode plate, a gate plate and an anode plate of the field emission display according to the present invention.

5 is a pixel structure of a field emission display showing an embodiment according to the present invention.

6 is a pixel structure of a field emission display showing another embodiment according to the present invention.

7 is a pixel structure of a field emission display showing another embodiment according to the present invention.

8 is a pixel structure of a field emission display showing another embodiment according to the present invention.

Description of the main parts of the drawing

10B, 10T, 20B, 20T: glass substrate, 11: cathode electrode

12, 22: film type electric field emitter, 13, 24: transparent anode electrode,

14, 25: phosphor 15, 26: spacer,

21S: scan signal line, 21D: data signal line,

23: field emitter control element,

100: cathode plate, 110, 210, 310: glass substrate,

120S: row (scan) signal line, 120D: column (data) signal line,

130: film type field emitter, 140: field emitter control element,

141: gate of the thin film transistor, 142: gate insulating film of the thin film transistor,

143: active layer of the thin film transistor, 144: source of the thin film transistor,

145: drain of the thin film transistor, 146: source electrode of the thin film transistor,

147: drain electrode of thin film transistor, 148: passivation insulating film,

149: electron focusing electrode,

200: gate plate, 230: gate electrode,

220: gate hole, 300: anode plate,

320: transparent anode electrode, 330: phosphor,

400: spacer

Claims (20)

An anode plate having a transparent electrode on the substrate and a phosphor on one region of the transparent electrode; A band-shaped matrix signal lines that enable matrix addressing on top of the substrate, and each pixel defined by the row and line signal lines, each pixel comprising two film-field emitters and at least two connected to the matrix signal lines. A cathode plate having a terminal and one terminal connected to said film type field emitter, said control plate controlling said field emitter; A gate plate having a gate hole penetrating therein and having a gate electrode which is one electrode formed around an upper portion of the gate hole, the gate plate being formed independently of the cathode plate; And A spacer for supporting the independently manufactured gate plate in contact with one of the cathode plate and the anode plate and spaced apart from the gate plate between other non-contact plates, The field emitter of the cathode plate is configured to face each other with the phosphor of the anode plate through the gate hole, and the region between the spaced apart cathode plate and the anode plate is vacuum packaged And a field emission display. The method of claim 1, And said anode plate, cathode plate and gate plate each comprised of a separate insulating substrate. The method of claim 1, And the spacer is formed between the cathode plate and the gate plate. The method of claim 1, And the spacer is formed between the anode plate and the gate plate. The method of claim 1, And the phosphor of each pixel is a phosphor of red (R), green (G) or blue (B). The method of claim 1, And a light shielding film is formed in a predetermined region between the phosphors of the anode. The method of claim 1, And said field emitter comprises a thin film or a thick film made of diamond, diamond carbon or carbon nanotubes. The method of claim 1, And the control element is a thin film transistor or a metal-oxide-semiconductor field effect transistor. The method of claim 1, A DC voltage is applied to the gate electrode to induce electron emission from the film-type field emitter of the cathode plate, and a DC voltage is applied to the transparent electrode of the anode plate to accelerate the emitted electrons to high energy, and scan And a gate plate, wherein the data signal is addressed to the control element of the field emitter in each pixel of the cathode plate so that the control element of the field emitter controls the electron emission of the field emitter to represent an image. Field emission display. The method of claim 9, A DC voltage of 50 to 1500 V is applied to the gate electrode of the gate plate, and a high voltage of 2 kV or more is applied to the transparent electrode of the anode plate. The method of claim 9, The gradation representation of the image is secured by varying the pulse amplitude and / or pulse width (duration) of the data signal voltage applied to the field emitter under control of the control element. Emission display. The method of claim 11, And the voltage of the data signal applied to the field emitter is a pulse of 0 to 50 volts. The method of claim 1, And a gate plate further interposed between the cathode plate and the gate plate. The method of claim 13, A constant voltage is applied to the electron focusing electrode to help electrons emitted from the field emitter to focus well on the phosphor of the anode plate, and together with the gate electrode of the gate plate, an electric field emission by the anode voltage. A field emission display with a gate plate, characterized in that it suppresses field emission from the site. The method of claim 13, And the electron focusing electrode is configured to serve as a light shielding film. The method of claim 1, And said field emitter is composed of dots separated into a plurality of areas, and the gate holes of the gate plate are formed in a number corresponding to each of these dots. The method of claim 1, wherein the control element is a thin film transistor, A gate made of metal on the cathode plate; A gate insulating film formed on the cathode plate including the gate; An active layer formed of a semiconductor thin film on a portion of the gate and the gate insulating film; Source and drain formed at both ends of the active layer; And an interlayer insulating layer having a contact hole for connecting said source and drain with an electrode. The method of claim 17, And an electron focusing electrode made of metal on the interlayer insulating layer. The method of claim 17, A field emission display having a gate plate, wherein the active layer of the thin film transistor is composed of an amorphous silicon or polysilicon layer. The method of claim 17, And said interlayer insulating film is composed of an amorphous silicon nitride film or a silicon oxide film.