KR100493684B1 - High density plasma chemical vapor deposition apparatus and method - Google Patents

Abstract

The plasma processing system of the present invention for processes such as chemical vapor deposition has a plasma process chamber 140, a substrate holder 130 for supporting the substrate 120 within the process chamber, and an inner surface facing the substrate holder. And an insulating member 155 forming a wall of the process chamber, a gas supply for supplying process gas into the chamber and toward the substrate, and RF energy into the chamber through the insulating member to excite the process gas into a plasma state. It has an RF energy source such as flat coil 150 that inductively couples. The gas supplier may include a main gas ring 170 and an additional ring 160 to supply gas or a gas mixture into the chamber. The gas supplier may further include injectors 180 attached to the main gas ring for injecting gas into the chamber and toward the substrate. The present plasma processing system may also have a cooling mechanism for cooling the main gas ring during processing.

Description

High density plasma chemical vapor deposition apparatus and method

The present invention relates to a system and method for delivering a reactant to a substrate in a high density plasma chemical vapor deposition reactor. More particularly, the present invention relates to a system and method for concentrating the transport of reactants toward a substrate and thermally controlling a gas injection facility through a system for injecting gas during processing of the substrate in a high density plasma chemical vapor deposition reactor. will be.

Vacuum process chambers are commonly used for chemical vapor deposition (CVD) of materials on substrates by supplying a process gas into the vacuum chamber and applying RF waves to the gas. Several gas distribution systems for integrated circuit processing are known, most of which are designed for plasma etching or plasma enhanced CVD (PECVD). Conventional gas distribution systems typically deliver reactants at relatively low flow rates. Typically, showerhead gas injection and diffusion transfer systems are used to ensure even distribution on the substrate.

These known systems are not optimized for High Density Plasma CVD (HDPCVD), such as encapsulation or filling of intermetal dielectric gaps. In HDPCVD, it is important to concentrate the transport of reactants, such as silane-related species, onto the substrate because the silane and its radicals, ie, SiH ₃ , SiH ₂ , SiH, etc., have a high adhesion coefficient. It is advantageous to direct the silane preferentially directly onto the substrate because this maximizes the substrate deposition rate and minimizes the film deposited on the various inner surfaces of the reactor.

Efficient use of silanes in HDPCVD requires direct reaction gases directly onto the substrate at high flow rates and even distribution in close proximity to achieve high deposition rates with good uniformity and film quality. Showerhead systems located close to the substrate are not ideal because they limit the range of ion diffusion in the plasma and can be detrimental to plasma and deposition uniformity. Diffusion systems are inadequate for HDPCVD because they cause the deposition of reactants on surfaces other than the substrate being processed. Deposition to surfaces other than the substrate results in inefficient use of the reaction gas and also requires higher flow rates to reach the desired deposition rate and substrate throughput. This higher flow rate is expensive because additional gas must be used and the capacity of the pump required to maintain low pressure in the process chamber must be increased. In addition, deposition on surfaces in the chamber other than the substrate can cause problems (delamination) of particles caused by differential expansion between the film and the inner surface of the chamber, and process disruptions as the wall conditions change. As a result, the chamber must be cleaned more often to remove such intra-vapor deposition, which further reduces substrate throughput.

A plasma etching system has been proposed in which a gas inlet supplies gas into the plasma process chamber. As shown in FIG. 1, the system processes a plasma source 110 to generate a plasma in chamber 140 and a process chamber 140 to process substrate 120 on substrate support 130. And a gas ring 167 to which a gas inlet for supplying gas is attached. This type of system may also include additional gas rings 160. Typically, the deposition rate in such a system is increased by concentrating the process gas onto the substrate 120. This is typically done by varying the distance of the gas ring 167 relative to the substrate 120. The more concentrated the process gas into the area above the center of the substrate, the higher the peak deposition rate. Unfortunately, concentrating the process gas near the center of the substrate, the deposition rate at the outer portion of the substrate may not increase by the center, which leads to a potential decrease in deposition uniformity.

Accordingly, what is needed is a gas distribution system that is optimized for HDPCVD while providing improved deposition rates and improved deposition uniformity.

1 illustrates a conventional plasma processing system.

2A and 2B show a plasma processing system according to a first embodiment of the present invention.

3A and 3B show experimental data for explaining the effects of changes in the radial position and the injection direction of the injector in the plasma processing system shown in FIGS. 2A and 2B, respectively.

4 shows a streamline of an exemplary gas flow into a plasma processing system according to the present invention.

5 qualitatively illustrates an exemplary direction of gas directed onto a substrate in accordance with the present invention.

6 shows a plasma processing system according to a second embodiment of the present invention.

7 shows a plasma processing system according to a third embodiment of the present invention.

8A-8B are detailed views illustrating exemplary injectors in a plasma processing system according to the present invention.

9A-9C and 10A-10C are detailed views illustrating exemplary injectors and gas rings in accordance with the present invention.

11 is a detailed view of an exemplary injector in accordance with the present invention.

It is an object of the present invention to provide a gas distribution system for HDPCVD that provides for the delivery of a uniform, high flow rate reaction gas that is preferentially concentrated onto the substrate surface, thereby minimizing the cleanliness requirements of the chamber while maximizing the deposition rate on the substrate. .

Another object of the present invention is to thermally control the gas injection plant to reduce the number of particles in the chamber by minimizing delamination from the interior surface of the chamber and minimizing particle generation by pyrolysis in the injection plant.

It is another object of the present invention to improve the deposition rate and deposition uniformity compared to conventional gas distribution systems.

According to one aspect of the invention, a plasma processing system for processing a substrate is provided. The plasma process system includes a plasma process chamber, a substrate holder for supporting a substrate in the process chamber, an inner surface facing the substrate holder, an insulating member forming a wall of the process chamber, and one or more process gases (i.e., A gas supply for supplying reactant gas and / or one or more inert gases) into the chamber toward the substrate, and an RF energy source for inductively coupling RF energy into the chamber through an insulating member to excite the process gas into a plasma state. It includes. The gas supply may include one or more gas rings with or without injectors to inject at least a portion of the process gas into the process chamber to intersect the exposed surface of the substrate. In addition, a cooling mechanism may be provided to cool the gas supply during the process to minimize the exfoliation of the film from the gas ring surface and to prevent overheating which may cause unwanted pyrolysis of the process gas.

According to another aspect of the present invention, a method for treating a substrate is provided. The method includes placing a substrate on a substrate holder in a process chamber in which an inner surface of the insulating member forming a wall of the process chamber faces the substrate holder, supplying a process gas into the process chamber, and passing through the insulating member. Exciting the process gas into a plasma state by inductively coupling RF energy into the process chamber. Substrates can be processed continuously by contacting the plasma gas in the process chamber. Process gas may be injected into the process chamber such that at least a portion thereof faces the substrate. In addition, the gas supplier equipment may be cooled in the process to minimize delamination and prevent overheating.

2A and 2B show a plasma processing system according to a first embodiment of the present invention. 2A and 2B, a plasma processing system for processing a substrate 120 includes a substrate support 130 and a process chamber 140 surrounding the substrate support. The substrate 120 may be, for example, a semiconductor wafer having a diameter of 4, 6, 8, 12 inches, or the like, a glass substrate for making a flat panel display, or the like. The substrate support 130 may be, for example, an electrode to which high frequency (RF) is applied. The substrate support 130 may be supported from the lower wall of the chamber 140 and may be of a cantilever type extending from the sidewall of the chamber 140. The substrate 120 may be mechanically or electrostatically fixed to the electrode 130. The process chamber 140 may be, for example, a vacuum chamber.

The substrate to be processed is introduced into the process chamber 140. The substrate is processed by exciting the process gas in the process chamber with a high density plasma in the process chamber. The energy source maintains a high density (eg, 10 ¹¹ -10 ¹² ions / cm 3) plasma in the chamber. Powered by a suitable RF source and a suitable RF impedance matching circuit, for example, having an antenna 150 such as the multi winding flat coil, the multi winding unplanar coil shown in FIGS. 2A and 2B, or other shapes The antenna inductively couples the RF energy into the chamber to provide a high density plasma. However, the plasma may be generated by other sources of the type such as ECR, parallel plates, helicon, helical resonators and the like. The chamber may comprise a suitable vacuum pump apparatus for maintaining the interior of the chamber at a desired pressure (eg, 5 Torr or less, preferably 1-100 mTorr). An insulating window such as a flat insulating window 155 or a non-flat insulating window having a uniform thickness shown in FIGS. 2A and 2B is provided between the antenna 150 and the inside of the process chamber 140. Form a vacuum wall at the top.

The gas supplier supplying the process gas into the chamber includes a main gas ring 170 under the insulating window 155. Gas ring 170 may be mechanically attached to the chamber housing above the substrate. The gas ring 170 may be made of, for example, aluminum or anodized aluminum.

The gas supplier includes an additional ring 160 under the insulating window 155. The process gas may include one or more gases, such as Ar or O ₂ , carried through orifices in the additional ring 160. Any suitable gas ring may be used as the additional ring 160. The additional ring 160 may be separated from the gas ring 170 by an optional spacer 165 formed of aluminum or anodized aluminum, as shown in FIG. 2A. Alternatively, although not shown, the additional ring 160 may be located between the gas ring 170 and the substrate under the gas ring 170. As another option, as shown in FIG. 2B, Ar and the orifices in the gas ring 162 connected to the bottom of the chamber, together with the spacer 165 separating the insulating window 155 and the main gas ring 170, are shown. O ₂ can be supplied.

The gas supply is connected to the main gas ring 170, a plurality of separable injectors, which can direct at least a portion of the process gas, such as SiH ₄ or related silicon containing gas such as SiF ₄ , TEOS, onto the substrate 120. It may further include 180. These gases are carried from the injector 180 through the injector outlet orifice 187 to the substrate. In addition, the reaction gases may be carried through an orifice in the main gas ring 170. The injector may be made of any suitable material, such as aluminum, anodized aluminum, quartz or ceramic such as Al ₂ O ₃ . Although two injectors are shown in FIGS. 2A and 2B, any number of injectors may be used. For example, the injector may be connected to respective orifices on the main gas ring 170. Preferably, 8 to 32 injectors are employed on a ring 170 of 200 to 210 mm diameter for a 200 mm substrate.

The injectors 180 are positioned above the plane of the substrate 120 such that the orifice is placed at a suitable distance from the substrate, for example 3-10 cm. The injectors can, according to a preferred embodiment, be spaced apart, for example 0 to 5 cm from the substrate edge inward, near or outward of the substrate edge. This makes it possible to prevent particles that have been peeled off the injector from falling onto the substrate and contaminating. The injectors may all be the same length, or a combination of different lengths may optionally be used to improve deposition rate and uniformity. At least some of the injectors are oriented such that the process gas is directed in a direction that intersects the exposed surface of the substrate.

In contrast to existing gas injection system designs that distribute the process gas over the substrate primarily by diffusion, injectors according to one embodiment of the present invention are oriented to inject the process gas in a direction intersecting at an angle with an exposed surface of the substrate . The injection axis or angle may range from approximately 15 to less than 90 degrees, preferably 15 to 45 degrees from the horizontal plane of the substrate. The injection axis or angle may be along the axis of the injector, or alternatively may have an angle of up to 90 ° with respect to the axis of the injector, as shown in FIG. 11. The outlet orifice diameter of the injector may be between 0.010 and 0.060 inches, preferably approximately 0.020 to 0.040 inches. The empty center of the injector 180 may be drilled approximately twice as large as the diameter of the outlet orifice 187, resulting in the flow of sound velocity at the outlet orifice rather than within the center of the injector. The flow rate of SiH _{4 for} a 200 mm substrate is preferably between 25-300 sccm, which may be higher for larger substrates.

Due to the small size of the orifice and the number of injectors and the large flow rate of SiH ₄ , a large pressure difference occurs between the gas ring 170 and the interior of the chamber. For example, when the pressure in the gas ring exceeds 1 Torr and the pressure inside the chamber is approximately 10 mTorr, the pressure difference is approximately 100: 1. This causes a flow of sound velocity, which is blocked at the orifice of the injector. It may also be adapted to provide supersonic flow at the internal orifice outlet of the injector.

Injecting SiH ₄ at the speed of sound prevents plasma from penetrating the injector. This design prevents the decomposition of SiH ₄ by plasma organic and consequently the formation of amorphous silicon residues in the gas ring and injector extension tubes.

According to this embodiment, a combination of convection and radiative cooling may be used during the process to limit the temperature of the chamber wall and gas ring to preferably about 100 ° C. or less. Optionally, it is possible to circulate a fluid, preferably -20 to 100 ° C, in the chamber wall for control of the wall and gas ring temperature. Since the gas ring temperature is typically kept below 100 ° C., no pyrolysis of SiH ₄ is observed in the gas ring. In addition, since the gas ring is effectively electrically grounded and surrounded by a metal chamber, no severe electric field is generated in the gas ring, which prevents the generation of plasma in the ring.

The plasma processing system according to the present embodiment provides increased deposition rate and improved on-substrate uniformity by concentrating silicon containing gas onto the substrate and preferentially directing the process gas onto a specific area of the substrate, compared to a conventional gas distribution system. do. The following describes experimental data demonstrating the improved performance of the plasma processing system according to the present invention, and briefly describes the appropriate theoretical background.

3A shows two exemplary SiO ₂ deposition characteristics for a plasma processing system where gas injectors are disposed at different locations relative to a substrate. Both cases are not optimized under the same deposition conditions (plasma source power = 2000W, electrode applied power = 2000W, SiH ₄ flow rate = 180sccm, O ₂ flow rate = 300sccm, pressure = 12mTorr, injection angle 22.5 ° downward to the substrate surface). It is obtained with the main gas ring 170. Case 1 (square) shows experimental data when the injector 180 orifices (16 circumferentially spaced at equal intervals) are located approximately 0.5 cm outside of the substrate edge, and Case 2 (triangle) is the injector. Show experimental data when orifices 187 are located approximately 2 cm outside of the substrate edge. In all examples the injector orifices 187 were located approximately 5 cm above the substrate 120. (Generally speaking, in the plasma processing system according to the present invention, as long as the vertical position of the injector orifices 187 is several cm or more above the substrate 120, the radial position of the injector orifices has a much greater effect on the deposition rate than the vertical position. Crazy.)

The overall deposition rate in case 1 is 10800 kW / min, which is higher than in case of 9200 kW / min. This is because in case 1 the silicon containing gas is more concentrated towards the center of the substrate. However, the increased deposition rate in Case 1 pays the high cost of reduced uniformity, ie uniformity is 8.1% in Case 1 (1σ), whereas Case 2 is 4.1%. As the silicon containing gas is further concentrated toward the center above the substrate, the deposition rate in the outer (radial) region of the substrate does not increase at the same rate as the deposition rate at the center. On the other hand, placing the injector orifice 187 further outwards reduces overall deposition rate but improves uniformity. Therefore, when the implant angle is constant with respect to the substrate (22.5 ° in this case), there is a trade-off relationship between deposition rate and uniformity, which occurs as the radial position of the implantation point changes.

However, the injection direction from gas ring 170 can be optimized for each injector such that the process gas is preferentially directed onto a particular area of the substrate. For example, in the optimization of the gas ring 170 for Case 1, the injection angle can be adjusted to preferentially direct more silicon-containing gas onto the substrate surface just inside the substrate edge. This increases the local deposition rate on the substrate and thereby improves uniformity.

Figure 3b shows experimental data showing the performance of optimizing the deposition rate and uniformity of a plasma processing system according to the present invention by selecting the appropriate injection angle at a given injection location. In all cases shown in FIG. 3B, the same injection position (plasma source power = 2500 W, electrode applied power = 2000 W, SiH ₄ flow rate = 250 sccm, O ₂ flow rate = 350 sccm, pressure = 14 mTorr) (16 injectors at equal intervals) And circumferentially arranged at about 2 cm outside of the substrate and about 6 cm above the substrate). In Case 3 (circle) the injection angle was 0 ° (parallel to the substrate) and in Case 4 (squares) the injection angle was 30 ° downwards (toward the substrate). In Case 3, the deposition rate was 10800 mA / min and uniformity was 5.3%, the lowest deposition rate near the substrate edge. Similar to the results shown in FIG. 3B, the uniformity of Case 3 can be improved by moving the injection position further out of the substrate. However, this would also basically result in a reduction in deposition rate (even though the uniformity was approximately double in FIG. 3A, but a loss of 15% in the deposition rate). As in Case 4, by adjusting the implant angle to 30 ° downward, deposition on the outer region of the substrate is increased while the overall deposition rate remains approximately the same, and the uniformity is improved to 2.5%.

This example shows the unexpected result of improvement in deposition uniformity without loss of deposition rate provided by the plasma processing system according to the present invention. This can be very beneficially used to increase substrate throughput during semiconductor processing.

The plasma processing system according to this embodiment supplies a uniform, flux of SiH ₄ towards the substrate, rather than diffusing it onto the substrate under typical HDPCVD conditions. Thus, in most cases a consistent deposition uniformity of 1σ <3% is obtained. This is accomplished by carefully superimposing the individual injector injections so that the sum of their injector fluxes is approximately equal at each point on the substrate.

The theoretical underpinnings for increasing the deposition rate near the substrate edge without seriously decreasing the deposition rate near the substrate center can be understood from the following discussion. Typically, free jet expansion from the sonic nozzle occurs within the continuous flow limit, due to the formation of a barrel shock / Mach disk structure. It results in a limited expansion. In this limited expansion, with a relatively small number of injectors, it is not expected to be able to obtain a uniform flux distribution on the substrate. However, according to the present invention, the fractionation density and chamber atmosphere are sufficiently low that fractionation rapidly transitions to the free molecular flow regime.

Within the free molecular flow region, the fraction is so sparse that no impact structure can be built, and the fraction effectively has a fixed (constant) temperature and velocity and simply expands as a Frantl-Meyer Expansion. 4 shows an exemplary streamline of gas fractionation from an injector. Referring to Figure 2, upon expansion the mammary gland appears radially from the point source. The density decreases in inverse proportion to the square of the distance from the point source along each streamline, and the variation in density by streamline (according to each Θ of polar coordinates) is approximately independent of polar coordinates R. Thus, for example, at a SiH ₄ flow rate of 200 sccm, a chamber pressure of 10 mTorr and a gas ring pressure of 3.9 Torr from 16 injectors with an orifice of 0.020 inches in diameter, the sum of the cabinets of conical expansion is approximately 150 °. This expansion is less divergent and therefore more parallel than the cosine distribution associated with the purely erupting flow.

The centerline density decreases with the square of the distance from the fractional outlet. That is, the local gas density p is given by

[Equation 1]

ρ (R, Θ = 0) = α (ρ (R = 0, Θ = 0)) / R ²

Where R and Θ are polar coordinates centered on the sorting outlet, and Θ = 0 is defined as the sorting axis. In addition, the density of expansion decreases with cos ² Θ. In other words,

[Equation 2]

ρ (R, Θ) = ρ (R, 0) cos ² (πΘ / 2φ)

Where φ is an empirical constant that depends on the specific heat ratio of the injected gas. For example, φ = 1.66 for nitrogen. Combining equations (1) and (2) and considering that the velocity is constant beyond the small fractionation diameter, flux J is determined as a function of position in the expansion.

[Equation 3]

J _SiH4 (R, Θ) = constant ρ (R, Θ)

Where J is the flux of _SiH4 is SiH _4.

FIG. 5 qualitatively illustrates how uniform SiH ₄ flux is directed onto the substrate. Referring to FIG. 5, it is assumed that the flux impinging on point A on the substrate along the centerline of the classification is the desired flux. At the point B off axis, the radial distance from the axis to the classification decreases while the streamline angle to the centerline of the classification increases. The flux depending on R and Θ is thus complementary and very uniform flux. That is, a decrease in radial distance increases the fractional flux, while an increase in the streamline angle Θ decreases the flux. At off-axis point C, both the radial position and the streamline angle increase relative to point A. This results in a decrease in flux from this injector at the center of the substrate, but this can be compensated for by overlapping injection cones from 15 different injectors located at the edge of the substrate. Similar observations can be made for other points on the substrate. Uniformity is further improved due to the large conical expansion of each class.

The simple analysis above ignores gas phase collisions. Before the SiH ₄ molecules reach the substrate, several gas phase collisions are expected to occur with an average free stroke of order 1 cm. These collisions will scatter some of the straight-out SiH ₄ flux, but the classification still maintains much greater straightness than purely diffuse sources. This is the straightness of the plasma processing system according to the invention, leading to locally improved deposition rates rather than diffusional properties.

6 shows a plasma processing system according to a second embodiment of the present invention. The plasma processing system shown in FIG. 6 is similar to that shown in FIG. 2A except that the main gas ring 170 of FIG. 6 is cantilevered and water cooled. According to this embodiment, the reaction gas is carried through orifices in the gas ring 170 which can be oriented in any direction. Preferably, some of the orifices face the substrate to enhance the deposition rate.

Water cooling of the gas ring 170 is accomplished by using two independent welded tubes 185 as shown in FIG. 6 or by using a dual tube structure. Optionally, a water cooling tube (not shown) may be spirally wound around the gas ring 170. Water cooling provides temperature control to minimize delamination from the gas ring and to prevent overheating of the gas ring due to high density plasma exposure.

In addition, radiative cooling can be used to limit chamber wall and gas ring temperatures and to prevent pyrolysis.

7 shows a plasma processing system according to a third embodiment of the present invention. Referring to FIG. 7, the plasma processing system may include a cantilevered water-cooled gas ring 170 and injectors 180. Gas ring 170 may also be supported by the chamber bottom.

According to this embodiment, the reaction gas can be injected toward the substrate in the same manner as in the first embodiment described above. Radiation cooling can be used to limit chamber wall and gas ring temperatures. Further, the lower gas ring can be water cooled as in the second embodiment described above. Thus, the third embodiment provides temperature control of the gas injection facility to minimize deposition as well as deposition onto the substrate.

8A-8D are detailed views illustrating exemplary injectors in a plasma processing system according to the present invention. For convenience of illustration, some elements of the plasma processing system, such as antenna 150 and gas rings 160 and 170, are omitted. 8A and 8C depict an example of the orientation of the injector 180 with respect to the substrate 120. 8A shows the injector 180 oriented approximately 45 ° with respect to the horizontal plane of the substrate 120. 8C shows another alternative, but less optimized orientation of the injector 180 as 90 ° relative to the horizontal plane of the substrate 120. Although not shown, the injection axis (ie, gas flow direction) is preferably 15 to 45 ° with respect to the horizontal plane of the substrate 120.

8B and 8D detail the injector 180 shown in FIGS. 8A and 8C, respectively. As shown in FIGS. 8B and 8D, the center of the injector is larger than the diameter of the outlet orifice 187 of the injector. This causes a flow of sound velocity at the outlet orifice and not at the center of the injector.

9A-9C and 10A-10C are detailed views illustrating exemplary injectors and gas rings in accordance with the present invention. 9A is a plan view of gas rings 160 and 170 and injector 180. 9B is a bottom view of gas rings 160, 170 and injector 180. 9C is a detailed top view of the injector 180.

Likewise, FIGS. 10A and 10B are top and bottom views, respectively, of gas rings 160 and 170 and injector 180. 10C is a detailed top view of the injector 180. 10A, 10B, and 10C are similar except that the shape of the gas outlet of the lower gas ring 170 is different from those of FIGS. 9A, 9B, and 9C, respectively.

11 is a detailed view of an exemplary injector in accordance with the present invention. 11 shows an exemplary size of the injector 180, which may be, for example, in inches. As shown in FIG. 11, the injection angle from the outlet orifice 187 with respect to the injection axis may range from 0 to 90 °. As in FIGS. 8B and 8D, it is evident from FIG. 11 that the center of the injector 180 is larger than the diameter of the outlet orifice 187 of the injector. This causes the flow of sound velocity to occur at the exit orifice and not at the center of the injector. Exemplary sizes of the injector 180 are shown in FIG. 9 for illustrative purposes. However, the injector according to the present invention is not limited to these sizes. The size can be selected as desired in any size depending on the application.

Although the gas injection system described above has been described with reference to a high density plasma CVD system, it can also be used for other processing such as etching. For example, it can be used for plasma etching in semiconductor applications where chemical etching systems such as chlorine etching of aluminum are widely used.

The principles, preferred embodiments and modes of operation of the present invention have been described above. However, the present invention should not be construed as limited to the particular embodiments discussed. That is, the above-described embodiments should be considered illustrative rather than limiting, and various modifications may be made without departing from the scope of the present invention as defined by the following claims by those skilled in the art. It should be acknowledged.

Claims (27)

Plasma process chamber; A substrate holder supporting the substrate in the process chamber; An insulating member having an inner surface facing the substrate holder and forming a wall of the process chamber; A gas supplier for supplying a process gas into the chamber; And An RF energy source that inductively couples RF energy into the chamber through the insulating member to excite the process gas into a plasma state for processing the substrate, The gas supplier has a main gas ring and an additional ring each having orifices for discharging gas, the main gas ring having injectors having the orifices, at least some of the injectors being the substrate holder. Located at or near the projection surface of the periphery of the substrate, which is spaced apart from and perpendicular to the surface of the substrate holder, the implant axis at an angle of 15 to 90 degrees with respect to the surface of the substrate holder, Orifices are generally arranged so as to face the center of the substrate holder and the gaseous jets ejected from the orifices of the injectors have at least a sound velocity and are oriented to intersect the exposed surface of the substrate or other areas on the exposed surface. A plastic comprising a process gas flowing directly onto the substrate Do processing system. The plasma processing system of claim 1, wherein the system is a chemical vapor deposition system or a plasma etching system. The plasma processing system of claim 1, wherein the RF energy source comprises a planar or non-planar coil. 3. The plasma processing system of claim 2, wherein the gas supplier supplies a halogen and / or oxygen containing gas for plasma etching, stripping or cleaning the substrate. 2. The plasma processing system of claim 1, wherein the gas supplier comprises a main gas ring for supplying the gas or gas mixture into the chamber such that at least a portion of the gas or gas mixture is directed to the substrate. 6. The plasma processing system of claim 5, wherein the gas supplier further comprises an additional ring for supplying additional gas or gas mixture into the chamber. 6. The gas supply system of claim 5, wherein the gas supply further comprises injectors connected to the main gas ring, the injectors injecting the gas or gas mixture into the chamber such that at least a portion of the gas or gas mixture is directed to the substrate. Plasma processing system, characterized in that. 8. The plasma processing system of claim 7, wherein the injectors are located near or outside the edge of the substrate. The method of claim 7, wherein the injectors inject the gas or gas mixture into the chamber at an angle of at least 15 ° relative to the exposed surface of the substrate, and / or the injectors inject the gas or gas mixture onto the substrate. And a plurality of gas flows overlapping each other in the region of the plasma processing system. The plasma processing system of claim 1, wherein the main gas ring has a cantilever type. The plasma processing system according to claim 1, further comprising a cooling mechanism for cooling the main gas ring during the process. 12. The plasma processing system of claim 11, wherein the cooling mechanism comprises means for supplying an electrically non-conductive coolant to prevent overheating during processing of the substrate. The method of claim 1, wherein the gas supplier supplies a silicon-containing gas and contacts the substrates with a plasma gas to deposit a silicon-containing layer on each of the substrates so that the substrates are continuously processed in the process chamber. Plasma processing system. 2. The plasma processing system of claim 1, wherein some of the orifices supply the process gas in a direction that does not intersect an exposed surface of the substrate. Placing a substrate on the substrate holder in the process chamber, the inner surface of the insulating member forming a wall of the process chamber facing the substrate holder; Supplying a process gas into the process chamber from a gas supply comprising a plurality of injectors with orifices, at least some of the orifices being proximate to the substrate and a plurality of gas flows parallel to the exposed surface of the substrate A process gas supplying step of orienting the process gas along an injection axis that crosses the exposed surface of the substrate at an acute angle so that the injectors overlap each other on one side and inject more process gas to the edge of the substrate than the center of the substrate ; And By inductively coupling RF energy through the insulating member into the process chamber, the process gas is plasma-reacted with the exposed surface of the substrate to deposit a layer of material on the exposed surface. Excitation to a state; and depositing a layer on the substrate. The method of claim 15, wherein supplying the gas, Supplying a gas or gas mixture from a main gas ring located within the process chamber, wherein at least a portion of the gas or gas mixture is passed through the injectors toward the substrate. The method of claim 16, wherein supplying the gas, And supplying additional gas or gas mixture from the additional spring. 17. The deposition method of claim 16, wherein the injectors are connected to the main gas ring, and the injectors inject at least a portion of the gas or gas mixture into the chamber to face the substrate. 19. The method of claim 18, wherein the injectors are located near or outside the edge of the substrate. The deposition method of claim 18, wherein the injectors inject at least a portion of the gas or gas mixture into the chamber at an angle of at least 15 ° relative to the exposed surface of the substrate. The deposition method of claim 15, wherein the process gas is excited by an RF antenna in the form of a flat coil. The method of claim 15, wherein the process gas is excited by an RF antenna in the form of a non-planar coil. 17. The deposition method according to claim 16, wherein the main gas ring is cantilevered and further comprises cooling the main gas ring during the process. 24. The method of claim 23, wherein the cooling step comprises passing an electrically non-conductive cooling liquid into thermally conductive contact with the main gas ring to prevent overheating of the main gas ring during processing of the substrate. Vapor deposition method. 22. The method of claim 21, wherein the material layer deposited on the substrate comprises a silicon containing layer. 16. The method of claim 15, wherein the substrates are continuously processed in the process chamber by contacting the substrates with plasma gas. 16. The method of claim 15, wherein some of the orifices supply the process gas in a direction that does not intersect the exposed surface of the substrate.